CN105238101A - Semiconductor nano paint composition and method for preparing solar cell from semiconductor nano paint composition - Google Patents
Semiconductor nano paint composition and method for preparing solar cell from semiconductor nano paint composition Download PDFInfo
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- CN105238101A CN105238101A CN201410293549.4A CN201410293549A CN105238101A CN 105238101 A CN105238101 A CN 105238101A CN 201410293549 A CN201410293549 A CN 201410293549A CN 105238101 A CN105238101 A CN 105238101A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for manufacturing a solar cell by a liquid-state coating or gaseous-state spraying method, a semiconductor nano paint composition capable of enabling the solar cell to have better power-generating effect and to be rich in electromagnetic wave shielding effect as well as a method for preparing the solar cell by use of the semiconductor nano paint composition. The semiconductor nano paint composition with the electromagnetic wave shielding effect comprises the following components in percentage by weight: 0.01%-49% of nano N/P impurity additive powder, 50%-99% of nano semiconductor substrate, 0.01%-30% of conductive adhesive and 0.01%-10% of nano carbon tubes; and a grain size of the nano semiconductor substrate and the nano N/P impurity additive powder ranges from 10<-9> m to 10<-7>m. The semiconductor nano paint with the electromagnetic wave shielding effect is utilized to spray or coat on a base plate which is provided with metal wires by screen printing, so that the solar cell is prepared after roasting and setting.
Description
Technical field
The invention relates to a kind of semi-conductive coating constituent; Go to manufacture solar cell especially in regard to a kind of being applicable to the method that liquid state coating or gaseous state are sprayed, and make solar cell have better generating effect and be rich in the semiconductor nano paint composite of electromagnetic shielding effect, and this semiconductor nano paint composite is used to make the method for solar cell (Solarcell).
Background technology
In recent years, along with industrial development and consumption electronic products universalness, the non-free radiated electromagnetic wave be full of in living environment also increases thereupon; In addition, in order to take the Sustainable Development of the green energy of environmental protection into account, the solar cell based on natural energy source becomes technology important and widely used.
The wide variety of general solar cell, wherein common with silica-based solar cell again.This silica-based solar cell has the basic structures such as P/N diode layer (P/Ndiode), anti-reflecting layer (antireflection), front electrode (frontcontactelectrode) and backplate (backcontactelectrode); And when sunlight excite the electronics of Siliciumatom (Electron), electric hole (Hole) to and cause its dissociate, electrons after free affects accelerated separation by the built in field between P/N diode, even be subject to the built in field impact between P/N diode, and make electronics and electric hole be attracted to its upper and lower two end plain conductors respectively, to form generating and galvanic circle.
But, because no matter the solar cell of traditional silicon base material is that the material of the basic structure such as P/N diode layer or anti-reflecting layer (antireflection), front electrode (frontcontactelectrode) and backplate (backcontactelectrode), vague and general layer is normally by solid-state material is formed in manufacturing process, this type of production method limits the use kenel of overall solar cell greatly, is not even easy to the surface being machined in flexible base plate or flexible base plate future; In addition, when manufacturing solar cell with conventional solid-state material substrate surface, the nano-grade size manufactured is coarse, and be limited to cannot effectively miniaturization and control, and cause in white light, only having the spectrum of some high-energy section that electronics electricity hole could be allowed to be excited by free, because this reason, use the generating efficiency of the silica-based solar cell of produced in conventional processes cannot manifest always and significantly promote.
On the other hand, even if the solar cell of traditional silicon base material can be made up of semi-conductor, metal, pottery, organic materials etc., but the bridging effect of part also only can be played for a large amount of hertzian wave be rich in living environment, more often cause reflection of electromagnetic wave, diffraction, move under water and continue scattering in living environment, cannot effectively eliminate the electromagenetic wave radiation produced pollution at all.
In view of this, really be necessary that development is a kind of and be different from known semiconductor nano paint composite, with semiconductor nano paint composite thus, make the better electricity generation efficiency of tool, again with the coating of electromagnetic shielding effect and solar electrical energy generation pond effect, solve foregoing various problem further.
Summary of the invention
Main purpose of the present invention is improve the problems referred to above, to provide a kind of semiconductor nano paint composite with electromagnetic shielding effect, it can have better generating effect and electromagnetic shielding effect concurrently, and then the substrate surface of various kenel can be used in, solar electrical energy generation structure is had and represents place more, also greatly can reduce the manufacturing cost person of solar electrical energy generation structure.
The present invention's time object is to provide a kind of method that semiconductor nano paint composite with tool electromagnetic shielding effect makes solar cell, it can be easy to the size and the uniformity coefficient that control semiconductor nano paint composite, increases generating efficiency to borrow the generating monomer of nano-grade size and is rich in electromagnetic shielding actor.
Another object of the present invention is to provide a kind of method that semiconductor nano paint composite with tool electromagnetic shielding effect makes solar cell, it can carry out under room temperature, significantly can reduce production cost, and implement with big area and easy means, and then simplify processing procedure and meet economic benefit person.
For reaching aforementioned invention object, the semiconductor nano paint composite of tool electromagnetic shielding effect of the present invention, comprise the nanometer N/P type impurity additive agent powder of 0.01% ~ 49%, 50% ~ 99% nanometer semiconductor substrate, the conducting resin material of 0.01% ~ 30% and the CNT (carbon nano-tube) of 0.01% ~ 10%, and the size of this nanometer semiconductor substrate and this nanometer N/P type impurity additive agent powder is 10
-9~ 10
-7rice.
Wherein, this CNT (carbon nano-tube) is Single Walled Carbon Nanotube, and the diameter of this Single Walled Carbon Nanotube is 0.6 ~ 4 nanometer.
Wherein, this CNT (carbon nano-tube) is multiple-wall carbon nanotube, and the diameter of this multiple-wall carbon nanotube is 10 ~ 240 nanometers.
Wherein, this nanometer N/P type impurity additive agent powder is the nanometer p type impurity additive agent powder of nanometer N-type impurity additive agent powder, nanometer p type impurity additive agent powder or equivalent and the mixed additive of nanometer N-type impurity additive agent powder blending.
Wherein, this nanometer N-type impurity additive agent powder is selected from mixing of phosphuret-(t)ed hydrogen, Vanadium Pentoxide in FLAKES, hydrogen arsenide, arsenic powder or phosphuret-(t)ed hydrogen and Vanadium Pentoxide in FLAKES.
Wherein, this nanometer p type impurity additive agent powder is diborane or B
2o
5.
Wherein, separately add the chemical solvents of 0.01% ~ 49%, this chemical solvents is methyl alcohol, ethanol, benzene, p-Xylol, phenylcarbinol or toluene.
Wherein, separately add the passivation gas of 0.01% ~ 49%, this passivation gas is nitrogen, helium, neon, Krypton or argon gas.
Wherein, be separately added with the dyestuff of 0.01% ~ 49%, this dyestuff is TCPP dyestuff.
Wherein, be separately added with the antireflection material of 0.01% ~ 49%, this antireflection material is silicon-dioxide powdery or beta-silicon nitride powder, and particle diameter is 10
-9~ 10
-7rice.
Wherein, 0.01% ~ 3% transparent paint vehicle is separately added with.
Wherein, this nanometer semiconductor substrate is silicon, gallium arsenide, germanium, ZnS, MgF
2or CNT (carbon nano-tube).
Wherein, this conducting resin material is aluminium glue or elargol.
For reaching aforementioned invention object, the present invention makes the semiconductor nano paint composite of apparatus electromagnetic shielding effect make the method for solar cell, comprises: on a substrate, form a prime coat, and screen printed gold belongs to line in this primer layer; Spray or the semiconductor nano paint composite of coating containing nanometer p type impurity additive agent powder in the surface of this prime coat and wire mark metal wire, to form a P-type layer; Spray in this P-type layer again or be coated with the vague and general layer containing nanometer equivalent P and N-type impurity additive agent powder; The formation that this vague and general layer continues contains a N-type layer of the N-type impurity additive agent powder of nanometer; And after baking sizing, then in this N-type layer surface mesh print metal wire, and form a transparent layer in the surface of this N-type layer wire mark metal wire.
Wherein, this semiconductor nano paint composite blending simultaneously of this vague and general layer of being shaped has nanometer p type impurity additive agent powder and the nanometer N-type impurity additive agent powder of equivalent.
Wherein, at the non-wire mark metal wire of this N-type layer and before not forming transparent layer, spray prior to another in this N-type layer or be coated with the semiconductor nano paint composite being added with dyestuff, continue again and spray or be coated with the semiconductor nano paint composite being added with antireflection material, to form the anti-reflecting layer that dyestuff and antireflection material stack in this N-type layer, on this anti-reflecting layer, screen printed gold belongs to line again, and forms this transparent layer in the surface of this anti-reflecting layer wire mark metal wire.
Accompanying drawing explanation
Fig. 1 a ~ 1b: the Making programme figure of the preferred embodiment of shaping solar cell.
Fig. 2 a ~ 2b: another preferred embodiment Making programme figure of shaping solar cell.
1 base material 2 prime coat
The vague and general layer of 3P type layer 4
5N type layer 6 transparent layer
7 anti-reflecting layer 7a dye coatings
7b antireflection top layer
L1, L2 metal wire.
Embodiment
For above-mentioned and other object of the present invention, feature and advantage can be become apparent, preferred embodiment of the present invention cited below particularly, and coordinate accompanying drawing, be described in detail below:
The semiconductor nano paint composite of tool electromagnetic shielding effect of the present invention goes for forming solar cell in any geometrical shape and any material carrier surface, and this solar cell can play better photoelectric conversion effect and also can cover the free hertzian wave in living environment simultaneously.Wherein, so-called " coating " can be coating solution or spray, is the general term of non-solid kenel.
The semiconductor nano paint composite of this tool electromagnetic shielding effect, comprise nanometer N/P type impurity additive agent powder (Dopant) of 0.01% ~ 49%, the nanometer semiconductor substrate of 50% ~ 99%, the conducting resin material of 0.01% ~ 30% and 0.01% ~ 10% CNT (carbon nano-tube) (CNT, and the size of this nanometer semiconductor substrate and this nanometer N/P type impurity additive agent powder is 10 carbonnanotube),
-9~ 10
-7rice.
Wherein, this nanometer N/P type impurity additive agent powder can be nanometer N-type impurity additive agent powder, nanometer p type impurity additive agent powder, or the mixed additive of the nanometer p type impurity additive agent powder of equivalent and the blending of nanometer N-type impurity additive agent powder; Preferably, this nanometer N-type impurity additive agent powder can be selected from mixing of phosphuret-(t)ed hydrogen, Vanadium Pentoxide in FLAKES, hydrogen arsenide, arsenic powder or phosphuret-(t)ed hydrogen and Vanadium Pentoxide in FLAKES, and this nanometer p type impurity additive can be chosen as diborane or B
2o
5.Whereby, by particle diameter convergence 10
-9~ 10
-7this nanometer N-type impurity additive agent powder of the nano-scale of rice and/or this nanometer p type impurity additive agent powder, then can increase the mixture homogeneity of powder granule and this nanometer semiconductor substrate, and then present better generating effect.
On the other hand, this CNT (carbon nano-tube) of the present embodiment can be chosen as Single Walled Carbon Nanotube, and the diameter of this Single Walled Carbon Nanotube is 0.6 ~ 4 nanometer; Or this CNT (carbon nano-tube) can also be chosen as multiple-wall carbon nanotube, and the diameter of this multiple-wall carbon nanotube is 10 ~ 240 nanometers.In detail, because CNT (carbon nano-tube) has the high connductivity characteristic of metallic conductor or semi-conductor, and also there is splendid mechanical properties and gas storage characteristic, cause and not only can increase conductive effect by the mutually auxiliary effect of this CNT (carbon nano-tube), also be dependent on the fine cast arrangement architecture of this CNT (carbon nano-tube) simultaneously, and effectively can cover the hertzian wave of institute's scattering in living environment, effectively to eliminate the electromagenetic wave radiation produced pollution.
For example, the Electronic Transport of Two Benzene of Single Walled Carbon Nanotube can be compared metallic copper, and its resistivity is about 5.1 × 10
-6Ω-cm, carries convergence 10 with this
9a/cm
2maximum current density; Therefore, even if be blinded by the hertzian wave of institute's scattering in living environment through this CNT (carbon nano-tube), but still can maintain splendid Electronic Transport of Two Benzene, and make the solar cell made present better conductive characteristic.
Based on prostatitis constituent, the present invention also can select the chemical solvents of interpolation 0.01% ~ 49%, this chemical solvents can be methyl alcohol, ethanol, benzene, p-Xylol, phenylcarbinol, toluene etc., to promote the blending uniformity coefficient of the semiconductor nano paint composite of this tool electromagnetic shielding effect as liquid coating at this point; Or, under the prerequisite being added with afore mentioned chemical solvent, another add again 0.01% ~ 49% passivation gas, this passivation gas is nitrogen, helium, neon, Krypton, argon gas etc., using the convenience at this point as gaseous state spray and when promoting follow-up making solar cell.
In the present embodiment, this nanometer semiconductor substrate can be chosen as silicon, gallium arsenide, germanium, ZnS, MgF
2or the nanometer granular powder of the tool characteristic of semiconductor such as CNT (carbon nano-tube); This conducting resin material then can be chosen as the conducting polymer of the tool such as aluminium glue or elargol electroconductibility.And based on principle of identity, those skilled in the art also can select to replace it by other tools identical characteristics person, hold and do not repeat one by one at this.
In addition to the foregoing, the semiconductor nano paint composite of tool electromagnetic shielding effect of the present invention separately can also be added with the dyestuff of 0.01% ~ 49%, to increase the optical absorption characteristics of incident light through dyestuff; Wherein, this dyestuff can be chosen as TCPP Ran Liao ﹝ tetra(4-carboxyphenyl) porphyrin ﹞.Further, the semiconductor nano paint composite of tool electromagnetic shielding effect of the present invention separately can also be added with the antireflection material of 0.01% ~ 49%, to reduce the reflection of light through antireflection material, and with the use of the common forming antireflective film of this dyestuff; Wherein, this antireflection material can be chosen as silicon-dioxide powdery or beta-silicon nitride powder, and particle diameter is preferably 10
-9~ 10
-7rice.
What is more, the transparent paint vehicle of interpolation 0.01% ~ 3% can also be selected, with promote light penetrate and be dyestuff or other composition part absorb effect; This transparent paint vehicle can be chemosynthesis paint or the lacquer of any tool light peneration matter, and this is that those skilled in the art can know, repeats no more.
From the above, the semiconductor nano paint composite of tool electromagnetic shielding effect of the present invention can form the product of any kenel such as coating, spray then, for the making processes of solar cell.In detail, the present embodiment select with the nanometer Vanadium Pentoxide in FLAKES of 5% and the nano-silicon of 45%, the elargol of 29.5% and 0.5% the common blending of Single Walled Carbon Nanotube, and under the effect of the methyl alcohol of 20%, be formed as the liquid coating of N-type semiconductor; Or, also can select after the common blending of each material in prostatitis, to be filled in a high-pressure metal tank and the nitrogen of filling 20% in this high-pressure metal tank, and then be formed as the gaseous state spray of N-type semiconductor.Based on this, the present embodiment separately can select with the nanometer five of 5% be oxidized two boron and the nano-silicon of 45%, the elargol of 29.5% and 0.5% the common blending of Single Walled Carbon Nanotube, and under the effect of the methyl alcohol of 20%, be formed as the liquid coating of P-type semiconductor or be filled with the nitrogen of 20% in this high-pressure metal tank after, be formed as the gaseous state spray of P-type semiconductor.Wherein, be can be those skilled in the art understood with each material technique means be jointly filled in high-pressure metal tank, only can form high pressure spray, hold system not subject to the limits and repeat its making processes.
So, use semiconductor nano paint composite of the present invention when solar cell makes, a prime coat 2 can be formed as Fig. 1 a on a substrate 1, and screen printed gold belongs to line L1 on this prime coat 2; Select to spray or the semiconductor nano paint composite of coating containing nanometer p type impurity additive agent powder in the surface of this prime coat 2 and wire mark metal wire L1, to form a P-type layer 3; Spray in this P-type layer 3 again or be coated with blending simultaneously and have the nanometer p type impurity additive agent powder of equivalent and the semiconductor nano paint composite of nanometer N-type impurity additive agent powder, to form a vague and general layer 4; Spray on this vague and general layer 4 or the semiconductor nano paint composite of coating containing nanometer N-type impurity additive agent powder, to form a N-type layer 5; And after baking sizing, then in this N-type layer 5 surface mesh print metal wire L2, and form a transparent layer 6, to complete the making of solar cell as shown in Figure 1 b in the surface of this N-type layer 5 wire mark metal wire L2.Wherein, baking sizing is temperature required is preferably 50 DEG C ~ 200 DEG C; And the aspect of wire mark metal wire is depending on actual demand, do not limit it.
According to above-mentioned made solar cell, not only can promote electroconductibility by the nanometer particle in semiconductor nano coating composition, and also there is electromagnetic shielding effect simultaneously; Even, more can fully reflect the incident light in each semi-conductor active layer (P-type layer 3, N-type layer 5 through the prime coat 2 formed in processing procedure ... Deng), to make extraneous light enter via this transparent layer 6, and auxiliary have the effect of this prime coat 2 under, then can present preferably photic electric effect.In addition, the solar cell made by the present invention more through this transparent layer 6, can reach effect of protection integral construction.Further, through the effect of this vague and general layer 4, then effectively can promote the monolithic conductive of solar cell, and also be dependent on the effect of contained CNT (carbon nano-tube) in each layer, cover the electromagnetic effect of institute's scattering in living environment to reach simultaneously.
Even, the present invention can also be as shown in Figure 2 a, at the N-type layer 5 non-wire mark metal wire L2 that this N-type semiconductor nano paint is formed, and before not forming this transparent layer 6, spray prior to another in this N-type layer 5 or be coated with the semiconductor nano paint composite being added with dyestuff, continue again and spray or be coated with the semiconductor nano paint composite being added with antireflection material, to form an anti-reflecting layer 7(that dyestuff and antireflection material stack as shown in the figure in this N-type layer 5, this anti-reflecting layer 7 has dye coating 7a and antireflection top layer 7b), and as shown in Figure 2 b this anti-reflecting layer 7 be shaped and through baking after, on this anti-reflecting layer 7, screen printed gold belongs to line L2 again, and form this transparent layer 6 in the surface of this anti-reflecting layer 7 wire mark metal wire L2, whereby, reduce the reflectivity of light through this anti-reflecting layer 7, and reach increase solar cell to effect of the photoabsorption usefulness of incident light simultaneously.
In sum, because semiconductor nano paint composite of the present invention forms with nanometer N/P type impurity additive agent powder, nanometer semiconductor substrate and the common blending of CNT (carbon nano-tube), therefore contained by this semiconductor nano paint composite, molecular particle size levels off to 10 relatively
-9~ 10
-7rice grade, and also present electromagnetic shielding effect by this CNT (carbon nano-tube) self-characteristic, more can form coating or spray with regard to the blending of non-solid material.Be with, the semiconductor nano paint composite of tool electromagnetic shielding effect of the present invention can not only be applicable to various substrate with the kenel of coating or spray, also especially can in response to flexible base plate or flexible base plate, and the N/P N-type semiconductorN rete of the closely attaching that is shaped at substrate surface easily, make semiconductor nano paint composite of the present invention have better and applicability widely whereby, and cause made solar cell all can have the better effect of electroconductibility and electromagnetic shielding etc. concurrently, even, this semiconductor nano paint composite is after passing through nanometer miniaturization, more can cause the light of all whole districts spectrum in white light that the electronics of N/P N-type semiconductorN rete electricity hole all can be allowed to dissociate to excite, and solve the gap produced when traditional material particle stacks simultaneously, stacking through molecule more closely and promote the film forming uniformity coefficient that this semiconductor nano paint composite sprays/coat substrate surface, and make solar cell can be dependent on uniform N/P N-type semiconductorN rete rete further to reach the effect promoting overall solar cell power generation efficiency, and borrow CNT (carbon nano-tube) to cover external electromagnetic ripple simultaneously.
The semiconductor nano paint composite of tool electromagnetic shielding effect of the present invention, it can have better electroconductibility and electromagnetic shielding effect concurrently, and then is used in the substrate of various kenel, stacks uniformity coefficient, promote its applicability at this point to present better particle simultaneously.
The present invention makes the method for solar cell with the semiconductor nano paint composite of tool electromagnetic shielding effect, it can be easy to the size and the uniformity coefficient that control semiconductor nano paint composite, increases generating efficiency to borrow the generating monomer of nano-scale and makes this solar cell be rich in electromagnetic shielding effect.And make under room temperature and more significantly can reduce production cost, to meet economic benefit.
Claims (16)
1. the semiconductor nano paint composite of a tool electromagnetic shielding effect, it is characterized in that, comprise the nanometer N/P type impurity additive agent powder of 0.01% ~ 49%, 50% ~ 99% nanometer semiconductor substrate, the conducting resin material of 0.01% ~ 30% and the CNT (carbon nano-tube) of 0.01% ~ 10%, and the size of this nanometer semiconductor substrate and this nanometer N/P type impurity additive agent powder is 10
-9~ 10
-7rice.
2. the semiconductor nano paint composite of tool electromagnetic shielding effect according to claim 1, is characterized in that, this CNT (carbon nano-tube) is Single Walled Carbon Nanotube, and the diameter of this Single Walled Carbon Nanotube is 0.6 ~ 4 nanometer.
3. the semiconductor nano paint composite of tool electromagnetic shielding effect according to claim 1, is characterized in that, this CNT (carbon nano-tube) is multiple-wall carbon nanotube, and the diameter of this multiple-wall carbon nanotube is 10 ~ 240 nanometers.
4. according to the semiconductor nano paint composite of the tool electromagnetic shielding effect of claim 1,2 or 3, it is characterized in that, this nanometer N/P type impurity additive agent powder is the nanometer p type impurity additive agent powder of nanometer N-type impurity additive agent powder, nanometer p type impurity additive agent powder or equivalent and the mixed additive of nanometer N-type impurity additive agent powder blending.
5. the semiconductor nano paint composite of tool electromagnetic shielding effect according to claim 4, it is characterized in that, this nanometer N-type impurity additive agent powder is selected from mixing of phosphuret-(t)ed hydrogen, Vanadium Pentoxide in FLAKES, hydrogen arsenide, arsenic powder or phosphuret-(t)ed hydrogen and Vanadium Pentoxide in FLAKES.
6. the semiconductor nano paint composite of tool electromagnetic shielding effect according to claim 4, is characterized in that, this nanometer p type impurity additive agent powder is diborane or B
2o
5.
7. according to the semiconductor nano paint composite of the tool electromagnetic shielding effect of claim 1,2 or 3, it is characterized in that, separately add the chemical solvents of 0.01% ~ 49%, this chemical solvents is methyl alcohol, ethanol, benzene, p-Xylol, phenylcarbinol or toluene.
8. according to the semiconductor nano paint composite of the tool electromagnetic shielding effect of claim 1,2 or 3, it is characterized in that, separately add the passivation gas of 0.01% ~ 49%, this passivation gas is nitrogen, helium, neon, Krypton or argon gas.
9. according to the semiconductor nano paint composite of the tool electromagnetic shielding effect of claim 1,2 or 3, it is characterized in that, be separately added with the dyestuff of 0.01% ~ 49%, this dyestuff is TCPP dyestuff.
10. according to the semiconductor nano paint composite of the tool electromagnetic shielding effect of claim 1,2 or 3, it is characterized in that, be separately added with the antireflection material of 0.01% ~ 49%, this antireflection material is silicon-dioxide powdery or beta-silicon nitride powder, and particle diameter is 10
-9~ 10-
7rice.
11., according to the semiconductor nano paint composite of the tool electromagnetic shielding effect of claim 1,2 or 3, is characterized in that, are separately added with 0.01% ~ 3% transparent paint vehicle.
12. according to the semiconductor nano paint composite of the tool electromagnetic shielding effect of claim 1,2 or 3, and it is characterized in that, this nanometer semiconductor substrate is silicon, gallium arsenide, germanium, ZnS, MgF
2or CNT (carbon nano-tube).
13. according to the semiconductor nano paint composite of the tool electromagnetic shielding effect of claim 1,2 or 3, and it is characterized in that, this conducting resin material is aluminium glue or elargol.
14. 1 kinds of methods using the semiconductor nano paint composite of tool electromagnetic shielding effect according to claim 1 to make solar cell, comprise:
On a substrate, form a prime coat, and screen printed gold belongs to line in this primer layer;
Sprinkling or coating contain the semiconductor nano paint composite of nanometer p type impurity additive agent powder in the surface of this prime coat wire mark metal wire, to form a P-type layer;
Spray in this P-type layer or be coated with the vague and general layer containing nanometer equivalent P and N-type impurity additive agent powder;
Spray on this vague and general layer or the semiconductor nano paint composite of coating containing nanometer N-type impurity additive agent powder, to form a N-type layer; And
After baking sizing, then in this N-type layer surface mesh print metal wire, and form a transparent layer in the surface of this N-type layer wire mark metal wire.
15. methods making solar cell according to claim 14, is characterized in that, this semiconductor nano paint composite blending simultaneously of this vague and general layer that is shaped has nanometer p type impurity additive agent powder and the nanometer N-type impurity additive agent powder of equivalent.
16. according to the method making solar cell of claims 14 or 15, it is characterized in that, at the non-wire mark metal wire of this N-type layer and before not forming this transparent layer, spray prior to another in this N-type layer or be coated with the semiconductor nano paint composite being added with dyestuff, continue again and spray or be coated with the semiconductor nano paint composite being added with antireflection material, to form the anti-reflecting layer that dyestuff and antireflection material stack in this N-type layer, on this anti-reflecting layer, screen printed gold belongs to line again, and forms this transparent layer in the surface of this anti-reflecting layer wire mark metal wire.
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|---|---|---|---|
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017067405A1 (en) * | 2015-10-19 | 2017-04-27 | 陈柏颕 | Solar energy film structure, method and apparatus for manufacture thereof |
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|---|---|---|---|---|
| CN1200389A (en) * | 1997-05-26 | 1998-12-02 | 四川联合大学 | Electromagnetic wave shielding composite coating and method for preparing same |
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