CN111199101A - IGBT reliability analysis method based on MMC working condition device level degradation - Google Patents

IGBT reliability analysis method based on MMC working condition device level degradation Download PDF

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CN111199101A
CN111199101A CN201911381422.7A CN201911381422A CN111199101A CN 111199101 A CN111199101 A CN 111199101A CN 201911381422 A CN201911381422 A CN 201911381422A CN 111199101 A CN111199101 A CN 111199101A
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reliability
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雷万钧
吕高泰
王蒙
高国庆
张晓洁
赵佳琪
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Xian Jiaotong University
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Abstract

The invention discloses an IGBT reliability analysis method based on MMC working condition device-level degradation. Considering that the physical parameters of the device are gradually degraded along with the service time, the current damage amount and the service time are subjected to sectional analysis on the basis of reliability index distribution to obtain the failure rate and the accelerated degradation reliability which are gradually improved along with the increase of the service time, and the degradation process of the device is visually reflected to the reliability analysis, wherein the analysis process can be applied to the conversion process from the service life prediction result to the reliability. The method can be used as a reference for considering the degradation factors of the physical parameters of the device in the regular maintenance and reliability analysis of the actual engineering.

Description

IGBT reliability analysis method based on MMC working condition device level degradation
Technical Field
The invention belongs to the technical field of flexible direct current transmission, and particularly relates to an IGBT reliability analysis method based on MMC working condition device-level degradation.
Background
The Modular Multilevel Converter (MMC) widely applied to the flexible direct current transmission technology (VSC-HVDC) is widely used due to the advantages of small harmonic quantity on the alternating current side, high efficiency, convenient maintenance due to the Modular design and the like. Insulated Gate Bipolar Transistors (IGBTs) are important switching devices in MMCs, and reliability and service life relate to failure and maintenance of MMC submodules. The modular design makes IGBT change easy but the cost is higher, and is great to MMC's reliability influence, consequently needs to carry out the aassessment of life-span, failure rate and reliability to IGBT under the MMC operating mode.
The IGBT can be classified into a solder type IGBT and a crimp type IGBT according to the packaging form of the IGBT. The failure sources of the welding type IGBT are bonding wire falling off and solder layer fatigue caused by overheating and creep energy, and the uneven thermal expansion coefficients among different solder layers can cause stress to concentrate at a solder joint when loading. The crimping type IGBT is more stable than a welding type IGBT, and main faults are caused by failure of a crimping spring.
At present, the failure phenomenon of the welding type IGBT is obvious, and the failure mode of the welding type IGBT is researched more. In the aspect of service life prediction, some researches are developed aiming at the nonlinear change of IGBT thermal resistance along with power cycle from the aspect of solder layer fatigue, the change of the thermal resistance is obtained from the aspect of a physical failure mechanism, and a service life prediction method under the condition of thermal resistance is provided, however, in the aspect of reliability analysis, the process of device degradation cannot be directly reflected no matter the failure rate is exponential distribution with a constant or Weibull distribution based on Monte Carlo fitting.
Disclosure of Invention
The invention aims to overcome the defects of the device degradation reliability analysis in the background technology, and provides an IGBT reliability analysis method based on MMC working condition device-level degradation, wherein the time-varying failure rate directly related to the degradation is obtained by using data extracted by a linear fatigue accumulation damage theory.
The invention is realized by adopting the following technical scheme:
an IGBT reliability analysis method based on MMC working condition device level degradation comprises the following steps:
(1) analyzing the current stress of an MMC sub-module according to MMC system parameters, substituting into an IGBT loss curve fitted by a data manual to obtain on-state loss and switching loss, and obtaining the junction temperature of a device according to thermal resistance combined loss provided by the IGBT data manual;
(2) processing MMC working condition data according to an IGBT service life prediction formula, and converting disordered all-year-round working condition data into a plurality of cycles containing amplitudes and mean values by using a rain flow counting algorithm to obtain the cycles, the amplitudes and the mean values substituted into the service life prediction formula;
(3) combining the steps (1) and (2) and a linear fatigue accumulated damage theory to obtain the single-cycle and annual damage amount under the working condition;
(4) aiming at one characteristic of IGBT degradation along with time, calculating the service life according to the degradation time point according to the nonlinear change of damage along with time, and substituting into a relational expression of the service life and the reliability under exponential distribution to obtain the reliability and failure rate which obey the exponential distribution;
(5) and (4) carrying out polynomial fitting on the obtained failure rate in combination with the step (4), and comparing the reliability after fitting with the sectional reliability to verify the effectiveness of fitting.
The further improvement of the invention is that in the step (1), according to the MMC working principle, when the half-bridge type submodule MMC operates in three-phase symmetry, the currents of the upper bridge arm and the lower bridge arm are respectively
Figure BDA0002342357520000021
Figure BDA0002342357520000022
In the formula ip、inAre respectively provided withFor single-phase upper and lower bridge arm current, IdcIs direct current side current, omega is fundamental angular frequency,
Figure BDA0002342357520000037
for the MMC AC side power factor angle, ImIs a single phase current peak value;
fitting the loss curve in the selected IGBT manual, the relation between loss power and junction temperature can be obtained:
Figure BDA0002342357520000031
Figure BDA0002342357520000032
Figure BDA0002342357520000033
Tj＝PT×Rth+Ta
in the formula, PTFor total loss of a single device, TaAnd TjAmbient temperature and junction temperature, respectively.
A further development of the invention is that, in step (2), the amplitude Δ T is measuredjSum mean TmCombined and applied to Norris-Landzberg formula:
Figure BDA0002342357520000034
in the formula, NfFor life, A, α, β are parameters, EaAnd k is the activation energy and boltzmann constant.
The invention is further improved in that in the step (4), the damage amount obtained in the step (3) at different service time points is converted into the service life and the failure rate based on the constant failure rate:
LiDi＝1
Figure BDA0002342357520000035
Figure BDA0002342357520000036
Li1＝ti-ti-1,t0＝0
Figure BDA0002342357520000041
in the formula, LiIs [0, ti]Total damage in time was DiPredicted value of time-life, Li1Is [ t ]i-1,ti]Stage injury in time Di1Time required, λiFailure rate in this case; dividing the process of the degradation of one physical characteristic of the IGBT over time into a plurality of stages, and calculating the reliability and the failure rate of each stage under exponential distribution in a segmented mode:
Rp(t)＝e-λiti＝1,...,n
Figure BDA0002342357520000042
in the formula, Rp(t) and lambdai(t) reliability and failure rate of IGBT in staged calculation, n is stage number, [ t ] tn-1,tn]To be at a failure rate of lambdanThe following time period.
The further improvement of the invention is that in the step (5), the failure rate obtained in the polynomial fitting step (4) is used, the reliability after fitting and the reliability during grading are compared, and the validity of the fitting result in the service time of the IGBT is ensured:
λ(t)＝at2+bt+c
Figure BDA0002342357520000043
in the formula, a, b and c are fitting parameters, and R (t) is the reliability of the IGBT after fitting.
The invention has at least the following beneficial technical effects:
according to the method, relevant task profile data are processed by combining the relation between the MMC power, the ambient temperature and the IGBT junction temperature in the sub-module according to the specific working condition of the MMC, the annual damage amount under the working condition is obtained, and then the sectional reliability analysis is performed on the IGBT degradation process under the condition that the reliability obeys the index distribution according to the characteristic that the IGBT increases the current total damage nonlinear growth along with the cycle number.
Firstly, according to the MMC concrete working condition, the invention combines the mathematical relation between power junction temperatures to obtain a relevant annual task section, substitutes the section into a service life prediction formula to obtain different service lives of each cycle, and accumulates according to a linear fatigue accumulated damage theory to obtain the total annual damage quantity. The IGBT with different models can be adjusted according to the parameters of the service life prediction formula, and the damage and service life can be predicted more accurately in the analysis process when the MMC operation condition and the specific type of the IGBT are obtained.
Secondly, parameters obtained by failure rate and service life prediction in reliability research cannot be directly equivalent, and the failure rate and the damage amount can be equivalent under certain conditions by using a special form of reliability index distribution. In order to ensure that the IGBT degradation process can be embodied in the failure rate increasing process, the IGBT failure rate is calculated according to the cycle times and the current total damage amount and time in a segmented mode, when the damage amount of a single cycle is gradually increased along with the increase of the times, the current total damage amount is increased in a nonlinear mode, and the failure rate is increased accordingly. This reliability analysis process can be used in research involving damage and life prediction, as well as analysis of different sources of failure.
In conclusion, the reliability analysis method can be used for analyzing the reliability of the IGBT under different working conditions of the MMC, and can also be used for analyzing the reliability of other power electronic devices related to long-time task profiles. The reliability index distribution is improved aiming at the phenomenon of deterioration, and compared with a large sample simulation, the method can more accurately reflect the process of accelerated deterioration of the device along with service time increase on failure rate, and can provide a certain reference for regular maintenance of the device in a system.
Drawings
FIG. 1 is a schematic structural diagram of a half-bridge sub-module MMC;
FIG. 2 illustrates a simulated current waveform on the AC side;
FIG. 3 is a MMC upper bridge arm current waveform;
fig. 4 is a mission profile combining temperature and power conditions, where fig. 4(a) is the junction temperature annual mission profile of the IGBT1 in the top half of the sub-module and fig. 4(b) is the junction temperature annual mission profile of the IGBT2 in the bottom half of the sub-module;
FIG. 5 is a stress distribution of a mission profile processed using a rain flow counting algorithm, wherein FIG. 5(a) is a T1 stress distribution and FIG. 5(b) is a T2 stress distribution;
FIG. 6 is a graph of the amount of single injury and the failure rate of T2 over time;
FIG. 7 is a graph of the reliability after the segmented calculation and fitting of T2, wherein FIG. 7(a) is a graph of the reliability degradation in the life prediction time range, and FIG. 7(b) is a graph of the comparison after the enlargement of the fitting;
FIG. 8 is a flowchart of an IGBT reliability analysis method based on MMC working condition device level degradation.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
As shown in fig. 8, the method for analyzing the reliability of the IGBT based on the MMC working condition device level degradation provided by the present invention includes the following steps:
(1) analyzing the relation between the current stress of the MMC sub-module, the loss and the IGBT junction temperature according to the MMC system parameters:
according to the MMC working principle, when the half-bridge type submodule MMC operates in three-phase symmetry, the currents of the upper bridge arm and the lower bridge arm are respectively
Figure BDA0002342357520000061
Figure BDA0002342357520000062
In the formula ip、inCurrent of single-phase upper and lower bridge arms, IdcIs a direct side current, and omega is a fundamental angular frequency，
Figure BDA0002342357520000063
Is the MMC alternating current side power factor angle. I ismThe steady state operating waveform is shown in fig. 2 for a single phase current peak.
To evaluate the thermal stress of the switching device, it is necessary to calculate T1, D1, T2 and D2 in H1, H2, respectively, when the leg currents flow in the forward direction as shown in fig. 3 in (α 1, α 2), the current flows through D1 or T2, and vice versa.
Figure BDA0002342357520000064
Figure BDA0002342357520000065
Figure BDA0002342357520000066
Tj＝PT×Rth+Ta
In the formula, PTFor total loss of a single device, TaAnd TjAmbient temperature and junction temperature, respectively.
(2) MMC working condition data are processed according to an IGBT service life prediction formula, and in order to predict service life in power circulation more accurately, most of IGBT service life prediction is amplitude delta TjSum mean TmBinding is as in the Norris-Landzberg formula:
Figure BDA0002342357520000071
in the formula, NfFor life, A, α, β are parameters, EaAnd k is the activation energy and boltzmann constant. Therefore, to process the T1, T2 annual mission profiles, the ordinal data points need to be cycled using a rainflow counting algorithm.
(3) And (3) combining the steps (1) and (2) and a linear fatigue accumulated damage theory to obtain the annual damage amount under the working condition.
(4) For one of the characteristics of the IGBT degradation over time, the service life, the reliability and the failure rate which are subjected to exponential distribution are calculated according to the nonlinear change of the damage over time according to the degradation time points, and the time and the damage required when the annual section damage amount changes at each stage are recorded.
Converting the damage quantity under different service time points obtained in the step (3) into the service life and the failure rate based on the constant failure rate:
LiDi＝1
Figure BDA0002342357520000072
Figure BDA0002342357520000073
Li1＝ti-ti-1,t0＝0
Figure BDA0002342357520000074
in the formula, LiIs [0, ti]Total damage in time was DiPredicted value of time-life, Li1Is [ t ]i-1,ti]Stage injury in time Di1Time required, λiIs the failure rate in this case. Dividing the process of the degradation of one physical characteristic of the IGBT over time into a plurality of stages, and calculating the reliability and the failure rate of each stage under exponential distribution in a segmented mode:
Rp(t)＝e-λiti＝1,...,n
Figure BDA0002342357520000081
in the formula, Rp(t) and lambdai(t) reliability and failure rate of IGBT in staged calculation, n is stage number, [ t ] tn-1,tn]To be at a failure rate of lambdanThe following time period.
(5) And (4) carrying out polynomial fitting on the obtained failure rate in combination with the step (4), and comparing the reliability after fitting with the sectional reliability to verify the validity of the fitting:
λ(t)＝at2+bt+c
Figure BDA0002342357520000082
in the formula, a, b and c are fitting parameters, and R (t) is the reliability of the IGBT after fitting.
Example (b):
taking the 232 module MMC in zhangbei engineering fengning station as an example, relevant system parameters are shown in table 1, and the half-bridge sub-module MMC is shown in fig. 1.
TABLE 1 MMC System Master parameters
Figure BDA0002342357520000083
Firstly, analyzing the junction temperature stress of the device current in the submodule according to the main parameters of the system in the table 1, and building a simulation platform in MATLAB to obtain the peak value of the single-phase current in steady-state operation shown in figure 2 and the bridge arm current shown in figure 3.
Secondly, processing MMC working condition data shown in the figure 4 by using a rain flow counting algorithm according to a Norris-Landzberg life prediction formula to obtain annual stress distribution of T1 and T2 in a submodule shown in the figure 5, and it can be seen that under the working condition, the conditions that the average temperature of T1 is lower, the temperature rise is small, the amplitude of T2 is larger, and the average temperature is higher are more, and T2 is more prone to aging failure compared with T1.
And thirdly, combining the analysis results of the first two steps to obtain the annual damage amount based on the working condition.
Fourth, in order to analyze one of the characteristics of the IGBT deterioration over time, a fatigue accumulation process of the solder layer is assumed using a method of thermal network renewal. Taking the traditional thermal resistance rise of 20% as an example of IGBT failure, the thermal resistance rise in the thermal network is 4% when the damage amount is increased by 20%, and the failure rate such as the failure rate is calculated in a segmented mode according to the change of damage along with timeFIG. 6 shows the time required for the change in the annual cross-sectional damage amount at each stage and the damage shown in Table 2, wherein DT1, DD1, DT2 and DD2 are the single damage amounts of T1, D1, T2 and D2 at a total damage of 1, and L is the single damage amount of Li1The service time required for the damage interval in units of years.
TABLE 2 IGBT Module device Damage and time
Component/damage 0-20％ 20％-40％ 40％-60％ 60％-80％ 80％-100％
DT1 0.000535 0.000543 0.000551 0.000561 0.00057
T1Li1 373.832 368.324 362.976 356.506 350.877
DD1 0.000275 0.000279 0.000285 0.00029 0.000294
D1Li1 727.273 716.846 701.754 689.655 680.272
DT2 0.044401 0.045763 0.047160 0.048587 0.050060
T2Li1 4.50440 4.37034 4.24088 4.11633 3.99521
DD2 0.010526 0.010969 0.011430 0.011923 0.012388
D2Li1 19.0006 18.2332 17.4978 16.7743 16.1446
And fifthly, performing polynomial fitting on the obtained failure rate, taking T2 which is most prone to failure under the working condition as an example, and obtaining the reliability of the comparison fitting of FIG. 7 and the validity of the sectional type reliability verification fitting. Wherein R ispFor reliability under piecewise calculation, R is reliability after fitting, ReTo take into account the reliability of the device degradation with increasing service time. It can be seen that the reliability is reduced with the service time in comparison with the traditional constant failure rate under the condition of considering the degradation of the device, and the gap is more obvious when the actual thermal resistance of the IGBT is increased more and more quickly with the increase of the cycle number.

Claims (5)

1. The IGBT reliability analysis method based on MMC working condition device level degradation is characterized by comprising the following steps of:
(1) analyzing the current stress of an MMC sub-module according to MMC system parameters, substituting into an IGBT loss curve fitted by a data manual to obtain on-state loss and switching loss, and obtaining the junction temperature of a device according to thermal resistance combined loss provided by the IGBT data manual;
(2) processing MMC working condition data according to an IGBT service life prediction formula, and converting disordered all-year-round working condition data into a plurality of cycles containing amplitudes and mean values by using a rain flow counting algorithm to obtain the cycles, the amplitudes and the mean values substituted into the service life prediction formula;
(3) combining the steps (1) and (2) and a linear fatigue accumulated damage theory to obtain the single-cycle and annual damage amount under the working condition;
(4) aiming at one characteristic of IGBT degradation along with time, calculating the service life according to the degradation time point according to the nonlinear change of damage along with time, and substituting into a relational expression of the service life and the reliability under exponential distribution to obtain the reliability and failure rate which obey the exponential distribution;
(5) and (4) carrying out polynomial fitting on the obtained failure rate in combination with the step (4), and comparing the reliability after fitting with the sectional reliability to verify the effectiveness of fitting.
2. The method for analyzing the reliability of the IGBT based on the MMC working condition device level degradation according to claim 1, characterized in that in step (1), according to the MMC working principle, when a half-bridge type submodule MMC operates in a three-phase symmetric manner, currents of an upper bridge arm and a lower bridge arm are respectively
Figure FDA0002342357510000011
Figure FDA0002342357510000012
In the formula ip、inCurrent of single-phase upper and lower bridge arms, IdcIs direct current side current, omega is fundamental angular frequency,
Figure FDA0002342357510000013
for the MMC AC side power factor angle, ImIs a single phase current peak value;
fitting the loss curve in the selected IGBT manual, the relation between loss power and junction temperature can be obtained:
Figure FDA0002342357510000021
Figure FDA0002342357510000022
Figure FDA0002342357510000023
Tj＝PT×Rth+Ta
in the formula, PTFor total loss of a single device, TaAnd TjAmbient temperature and junction temperature, respectively.
3. The method for analyzing the reliability of the IGBT based on the MMC working condition device level degradation as claimed in claim 2, wherein in the step (2), the amplitude Δ T is determinedjSum mean TmCombined and applied to Norris-Landzberg formula:
Figure FDA0002342357510000024
in the formula, NfFor life, A, α, β are parameters, EaAnd k is the activation energy and boltzmann constant.
4. The method for analyzing the reliability of the IGBT based on the MMC working condition device level degradation as claimed in claim 3, wherein in the step (4), the damage amount obtained in the step (3) at different service time points is converted into the service life and the failure rate based on the constant failure rate:
LiDi＝1
Figure FDA0002342357510000025
Figure FDA0002342357510000026
Li1＝ti-ti-1,t0＝0
Figure FDA0002342357510000027
in the formula, LiIs [0, ti]Total damage in time was DiPredicted value of time-life, Li1Is [ t ]i-1,ti]Stage injury in time Di1Time required, λiFailure rate in this case; dividing the process of the degradation of one physical characteristic of the IGBT over time into a plurality of stages, and calculating the reliability and the failure rate of each stage under exponential distribution in a segmented mode:
Figure FDA0002342357510000031
Figure FDA0002342357510000032
in the formula, Rp(t) and lambdai(t) reliability and failure rate of IGBT in staged calculation, n is stage number, [ t ] tn-1,tn]To be at a failure rate of lambdanThe following time period.
5. The method for analyzing the reliability of the IGBT based on the MMC working condition device level degradation as claimed in claim 4, wherein in the step (5), the failure rate obtained in the step (4) is fitted by using a polynomial, the reliability after fitting and the reliability during the staging are compared, and the validity of the fitting result in the service time of the IGBT is ensured:
λ(t)＝at2+bt+c
Figure FDA0002342357510000033
in the formula, a, b and c are fitting parameters, and R (t) is the reliability of the IGBT after fitting.
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