CN111198414B - 一种自偏置的磁光非互易超构表面器件 - Google Patents

一种自偏置的磁光非互易超构表面器件 Download PDF

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CN111198414B
CN111198414B CN202010031484.1A CN202010031484A CN111198414B CN 111198414 B CN111198414 B CN 111198414B CN 202010031484 A CN202010031484 A CN 202010031484A CN 111198414 B CN111198414 B CN 111198414B
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毕磊
杨伟豪
秦俊
龙嘉威
邓龙江
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Abstract

本发明涉及非互易超构表面，具体涉及一种自偏置的磁光非互易超构表面器件。本发明通过将亚波长尺寸的硬磁材料结构层按矩阵周期排列在微波频段折射率为1～5的材料层上，通过改变结构层的结构单元的长宽高实现对电磁波的相位和振幅的调控，只需一次磁化，无需持续外加磁场。最终本发明基于磁光效应通过高矫顽力的硬磁材料实现了自偏置的磁光效应非互易器件；且采用亚波长尺寸的结构，利于器件的小型化和集成化。在雷达屏蔽(单向透射)、自由空间隔离器、非互易透镜、非互易全息成像等领域有着重要的应用前景。

Description

一种自偏置的磁光非互易超构表面器件
技术领域
本发明涉及非互易超构表面，具体涉及一种自偏置的磁光非互易超构表面器件。
背景技术
超构表面是一层二维的亚波长平板结构，能够有效地调控电磁波的振幅、偏振和波前，成为近几年的研究热点。其主要功能是可以在一层界面上实现各种光学器件，如透镜、玻片等。相比传统的光学器件，超构表面拥有亚波长厚度，以及更高的灵活性来设计各种各样的电磁波器件。而非互易超构表面，由于在自由空间隔离器上的重要应用，引起了很多人的关注。
目前，能够实现非互易性的机理主要有三个：非线性、时空调制、磁光效应。相比于非线性和时空调制，基于磁光效应的非互易器件拥有宽带、低功耗、稳定等优势。但是，磁光效应的缺点在于需要一个大的磁铁提供磁场以及很难在光频段实现。
虽然在微波和太赫兹频段，基于强度型的非互易器件(透过强度不同)已经被研究；但是现有基于磁光效应的强度型非互易器件，仅仅在理论上有研究，并且在器件的使用中需要一个大的磁铁提供磁场，属于有源器件，限制在特定空间中使用。相比于需要外加偏置的磁光非互易器件，自偏置的器件不需要外部磁铁提供磁场，属于无源器件，可以在自由空间中使用。而自偏置的磁光非互易器件，在理论和实验上都尚未被研究。
发明内容
针对上述存在问题或不足，为解决现有磁光效应非互易器件仅停留在理论阶段的空白以及实用性极低的问题，本发明提供了一种自偏置的磁光非互易超构表面器件。
该自偏置的磁光非互易超构表面器件，由衬底层和亚波长结构层组成。
所述衬底层是微波频段的折射率在1～5的材料层；亚波长结构层是由方形柱状结构单元按矩阵周期排列构成，且矩阵周期在行和列方向上相等，由具有磁光效应的磁光材料制备，通过改变方形柱状结构单元的长宽高实现对圆偏振电磁波的相位和振幅的调控，最终在中心频率f0上实现隔离度和插入损耗的需求。
所述具有磁光效应的磁光材料矫顽力Hc≥1000A/m，剩余磁化强度Br≥1kGs，同时介电张量或磁导率张量的非对角元与对角元之比在工作频段≥0.01；通过磁光材料的剩余磁化强度来实现自偏置状态下工作，磁光效应实现非互易性。
衬底层厚为L；方形柱状结构单元的高度为h、长为w1、宽为w2，以矩阵周期在行和列方向上相等的周期p构成整个亚波长结构层，整个器件尺寸为D1×D2，器件对圆偏振入射电磁波响应；其中各尺寸满足关系：w1≤10mm，w2＝0.75w1～1.25w1，h＝w1～3w1，p＝3w1～4w1，L＝1/2w1～2w1，D1＝10λ0～15λ0，D2＝10λ0～15λ0，λ0＝c/f0，c为真空中光速。
整个器件的厚度在亚波长尺寸，进行一次磁化，且保证剩磁方向与入射电磁波方向平行。
进一步的，所述磁光效应的磁光材料为铁氧体或YIG材料，衬底层采用聚四氟乙烯制备。
本发明的特点及有益效果是：
本发明非互易超构表面器件主要的特点是：自偏置，采用硬磁材料，只需一次磁化，无需持续外加磁场；亚波长结构，采用的结构都在亚波长尺寸，利于器件的小型化和集成化。本发明通过将亚波长尺寸的硬磁材料结构层按矩阵周期排列在微波频段的材料层上，通过改变结构层的结构单元的长宽高实现对电磁波的相位和振幅的调控，只需一次磁化，无需持续外加磁场。最终本发明基于磁光效应通过高矫顽力的硬磁材料实现了自偏置的磁光效应非互易器件；且采用亚波长尺寸的结构，利于器件的小型化和集成化。在雷达屏蔽(单向透射)、自由空间隔离器、非互易透镜、非互易全息成像等领域有着重要的应用前景。
附图说明
图1为实施例基于圆偏振的强度型非互易超构表面器件的结构示意图；
图2为实施例基于圆偏振的强度型非互易超构表面器件正向与反向透射谱。
具体实施方式
下面结合附图和实施例对本发明作进一步的详细说明。
如在背景技术部分叙述中，用于实现非互易超构表面的可行方案主要有非线性、时空调制和磁光效应。对于基于非线性的非互易器件需要非常高的输入功率以及存在动态互易问题；基于时空调制的非互易器件的功耗很大、带宽窄以及器件尺寸比较大；基于磁光效应的非互易器件的缺点在于需要一个大的磁铁提供磁场以及很难在光频段实现。而基于磁光效应的优势是宽带、低功耗、稳定。因此，实现自偏置的磁光非互易超表面器件具有重大的意义。
本实例设计了基于圆偏振电磁波的自偏置强度型超构表面结构。
自偏置强度型超构表面结构包括厚L的衬底层；高度为h、长为w1、宽为w2、周期p的方形柱状结构层，整个器件尺寸为D1×D2。器件对圆偏振入射电磁波响应。剩余磁化强度方向与电磁波入射方向平行。通过改变结构层的结构单元的长宽高实现对电磁波的相位和振幅的调控，在中心频率f0上实现预期的隔离度和插入损耗需求。
采用微波频段高矫顽力高磁光效应的六角钡铁氧体材料用作亚波长结构层的结构单元制备，利用其剩余磁化强度实现自偏置；同时，采用高方向比的方形柱作为结构单元用于圆偏振设计。通过设计亚波长周期结构的Mie谐振单元，实现对圆偏振光的单向透射功能。
对于圆偏强度型，一种优选实例，包括2毫米厚的聚四氟乙烯衬底层；以高度为6mm、边长为3mm、周期10mm的正方形柱状六角钡铁氧体材料作为亚波长结构层的结构单元，整个器件尺寸为20×20cm。器件对圆偏振入射电磁波响应，其结构示意图如图1所示，其中1是结构层，2是聚四氟乙烯衬底层。剩余磁化强度方向与电磁波入射方向平行，即沿六角钡铁氧体材料的高度方向。
对本实施例制备的器件进行测试分析有：在15.67GHz频段，我们实现了单向透射的功能，其中隔离度9.18dB、插损1.35dB,如图2所示。
综上可见，当电磁波入射到本发明具备剩磁的磁性结构层，由于材料的非互易性，会使得的正向入射的电磁波与反向入射的电磁波的振幅和相位不一样。因此，只需一次磁化，无需持续外加磁场，实现电磁波的非互易传输；且利于器件的小型化和集成化。在雷达屏蔽(单向透射)、自由空间隔离器、非互易透镜、非互易全息成像等领域有着重要的应用前景。

Claims (3)

1.一种自偏置的磁光非互易超构表面器件，由衬底层和亚波长结构层组成，其特征在于：
所述衬底层是微波频段的折射率在1～5的材料层；亚波长结构层是由方形柱状结构单元按矩阵周期排列构成，且矩阵周期在行和列方向上相等，由具有磁光效应的磁光材料制备，通过改变方形柱状结构单元的长宽高实现对圆偏振电磁波的相位和振幅的调控，最终在中心频率f0上实现隔离度和插入损耗的需求；
所述磁光效应的磁光材料矫顽力Hc≥1000A/m，剩余磁化强度Br≥1kGs，同时介电张量或磁导率张量的非对角元与对角元之比在工作频段≥0.01；通过磁光材料的剩余磁化强度来实现自偏置状态下工作，磁光效应实现非互易性；
衬底层厚为L；方形柱状结构单元的高度为h、长为w1、宽为w2，以矩阵周期在行和列方向上相等的周期p构成整个亚波长结构层，整个器件尺寸为D1×D2，器件对圆偏振入射电磁波响应；其中各尺寸满足关系：w1≤10mm，w2＝0.75w1～1.25w1，h＝w1～3w1，p＝3w1～4w1，L＝1/2w1～2w1，D1＝10λ0～15λ0，D2＝10λ0～15λ0，λ0＝c/f0，c为真空中光速；
整个器件的厚度在亚波长尺寸，进行一次磁化，且保证剩磁方向与入射电磁波方向平行。
2.如权利要求1所述自偏置的磁光非互易超构表面器件，其特征在于：所述磁光效应的磁光材料为铁氧体或YIG材料。
3.如权利要求1所述自偏置的磁光非互易超构表面器件，其特征在于：所述衬底层采用聚四氟乙烯制备。
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