CN111193083B - Band-pass filter, manufacturing method and driving method thereof, and electronic device - Google Patents
Band-pass filter, manufacturing method and driving method thereof, and electronic device Download PDFInfo
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- CN111193083B CN111193083B CN202010119373.6A CN202010119373A CN111193083B CN 111193083 B CN111193083 B CN 111193083B CN 202010119373 A CN202010119373 A CN 202010119373A CN 111193083 B CN111193083 B CN 111193083B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/007—Manufacturing frequency-selective devices
Abstract
A band pass filter comprising: the liquid crystal display panel comprises a first substrate, a second substrate and a liquid crystal layer, wherein the first substrate and the second substrate are oppositely arranged, and the liquid crystal layer is positioned between the first substrate and the second substrate; the first substrate comprises a first substrate, a first electrode and a ground electrode, wherein the first electrode and the ground electrode are arranged on the first substrate; the second substrate comprises a second substrate and a second electrode arranged on the second substrate, and the second electrode is positioned on one side of the second substrate close to the liquid crystal layer; the dielectric constant of the liquid crystal layer changes with the voltage change between the first electrode and the second electrode, and the working frequency band of the band-pass filter changes with the dielectric constant change of the liquid crystal layer.
Description
Technical Field
The present disclosure relates to the field of communications technologies, and in particular, to a band-pass filter, a method for manufacturing the band-pass filter, a method for driving the band-pass filter, and an electronic device.
Background
The band-pass filter is an indispensable microwave device in a communication system, and the main function is to realize that signals in a specified frequency band can be transmitted, and signals outside the frequency band are attenuated and suppressed. With the complicated design of the communication system, the operating frequency band of the communication system increases, however, the operating frequency band of the conventional band pass filter cannot be changed, and if the operating frequency band of the communication system is changed, the design of the band pass filter needs to be increased or changed. Aiming at the situation, the band-pass filter with the adjustable working frequency band is adopted, so that the complexity of a communication system can be reduced, and the cost of devices can be saved. However, the current band-pass filter with adjustable operating frequency band is usually implemented by using a Micro Electro-Mechanical System (MEMS) or a PIN structure, and is a discrete device, which has low integration level and is not easy to be manufactured in a large scale.
Disclosure of Invention
The disclosure provides a band-pass filter, a manufacturing method and a driving method thereof, and an electronic device.
In one aspect, the present disclosure provides a band-pass filter comprising: the liquid crystal display panel comprises a first substrate, a second substrate and a liquid crystal layer, wherein the first substrate and the second substrate are oppositely arranged, and the liquid crystal layer is positioned between the first substrate and the second substrate; the first substrate comprises a first substrate, and a first electrode and a ground electrode which are arranged on the first substrate, wherein the first electrode is positioned on one side of the first substrate close to the liquid crystal layer, the ground electrode is positioned on one side of the first substrate far away from the liquid crystal layer, and the first electrode is coupled with the ground electrode; the second substrate comprises a second substrate and a second electrode arranged on the second substrate, and the second electrode is positioned on one side, close to the liquid crystal layer, of the second substrate; the dielectric constant of the liquid crystal layer changes along with the voltage change between the first electrode and the second electrode, and the working frequency band of the band-pass filter changes along with the dielectric constant change of the liquid crystal layer.
In another aspect, the present disclosure provides an electronic device comprising a band-pass filter as described above.
In another aspect, the present disclosure provides a method for manufacturing a band-pass filter, including: preparing a first substrate, wherein the first substrate comprises a first base and a first electrode and a ground electrode which are arranged on two opposite sides of the first base, and the first electrode is coupled with the ground electrode; preparing a second substrate, wherein the second substrate includes a second base and a second electrode disposed on the second base; a liquid crystal layer is sandwiched between the first substrate and the second substrate, the first electrode is positioned between the first substrate and the liquid crystal layer, and the second electrode is positioned between the second substrate and the liquid crystal layer; the dielectric constant of the liquid crystal layer changes along with the voltage change between the second electrode and the first electrode, and the working frequency band of the band-pass filter changes along with the dielectric constant change of the liquid crystal layer.
In another aspect, the present disclosure provides a driving method of the band pass filter as described above, including: applying a voltage to the first and second electrodes to change a dielectric constant of a liquid crystal layer between the first and second electrodes; and controlling the voltage applied to the first electrode or the second electrode so as to adjust the working frequency band of the band-pass filter.
The band-pass filter provided by the disclosure is realized by clamping a liquid crystal layer between a first substrate and a second substrate, and the dielectric constant of the liquid crystal layer is changed by applying voltage to a first electrode and a second electrode, so that the working frequency band of the band-pass filter is adjusted. The working frequency band of the band-pass filter provided by the disclosure has higher adjusting precision, and the band-pass filter provided by the embodiment supports large-scale production and can reduce the preparation cost.
Additional features and advantages of the disclosure will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the disclosure. Other advantages of the disclosure may be realized and attained by the instrumentalities and combinations particularly pointed out in the specification and the drawings.
Drawings
The accompanying drawings are included to provide an understanding of the disclosed embodiments and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the examples serve to explain the principles of the disclosure and not to limit the disclosure.
Fig. 1 is a top view of a bandpass filter provided in an embodiment of the present disclosure;
FIG. 2 is a schematic cross-sectional view along the direction AA in FIG. 1;
FIG. 3 is a schematic cross-sectional view taken along the direction BB in FIG. 1;
FIG. 4 is a top view of a first substrate in an embodiment of the present disclosure;
fig. 5 is an equivalent circuit diagram of a bandpass filter according to an embodiment of the present disclosure;
fig. 6 is a top view of a bandpass filter according to another embodiment of the present disclosure;
FIG. 7 is a schematic cross-sectional view taken along the direction BB in FIG. 6;
fig. 8 is a simulation diagram of S11 during frequency adjustment of the bandpass filter according to an embodiment of the disclosure;
fig. 9 is a simulation diagram of S21 during frequency adjustment of the bandpass filter according to an embodiment of the disclosure.
Description of reference numerals:
110-a first substrate; 120-a second substrate; 111-a first electrode; 122-a second electrode; 113-ground electrode; 114-a port electrode; 115-connecting electrodes; 130-a liquid crystal layer; 150-an encapsulation layer; 111 a-first transmission line; 111 b-a second transmission line; c1 — first capacitance; c2 — second capacitance; l1 — first inductance; l2 — second inductance.
Detailed Description
The present disclosure describes embodiments, but the description is illustrative rather than limiting and it will be apparent to those of ordinary skill in the art that many more embodiments and implementations are possible within the scope of the embodiments described in the present disclosure. Although many possible combinations of features are shown in the drawings and discussed in the embodiments, many other combinations of the disclosed features are possible. Any feature or element of any embodiment may be used in combination with or instead of any other feature or element in any other embodiment, unless expressly limited otherwise.
The present disclosure includes and contemplates combinations of features and elements known to those of ordinary skill in the art. The embodiments, features and elements of the present disclosure that have been disclosed may also be combined with any conventional features or elements to form unique aspects as defined by the claims. Any feature or element of any embodiment may also be combined with features or elements from other aspects to form another unique aspect as defined by the claims. Thus, it should be understood that any features shown or discussed in this disclosure may be implemented separately or in any suitable combination. Accordingly, the embodiments are not limited except as by the appended claims and their equivalents. Furthermore, various modifications and changes may be made within the scope of the appended claims.
Further, in describing representative embodiments, the specification may have presented a method or process as a particular sequence of steps. However, to the extent that the method or process does not rely on the particular order of steps set forth herein, the method or process should not be limited to the particular sequence of steps described. Other orders of steps are possible as will be understood by those of ordinary skill in the art. Therefore, the particular order of the steps set forth in the specification should not be construed as limitations on the claims. Further, the claims directed to the method or process should not be limited to the performance of their steps in the order written, and one skilled in the art can readily appreciate that the sequences may be varied and still remain within the spirit and scope of the embodiments of the present disclosure.
The embodiment of the disclosure provides a band-pass filter, a manufacturing method and a driving method thereof, and an electronic device.
The disclosed embodiment provides a band-pass filter, including: the liquid crystal display panel comprises a first substrate, a second substrate and a liquid crystal layer, wherein the first substrate and the second substrate are oppositely arranged, and the liquid crystal layer is positioned between the first substrate and the second substrate; the first substrate comprises a first substrate, a first electrode and a ground electrode, wherein the first electrode and the ground electrode are arranged on the first substrate; the second substrate comprises a second substrate and a second electrode arranged on the second substrate, and the second electrode is positioned on one side of the second substrate close to the liquid crystal layer; the dielectric constant of the liquid crystal layer changes with the voltage change between the first electrode and the second electrode, and the working frequency band of the band-pass filter changes with the dielectric constant change of the liquid crystal layer.
The present embodiment implements a tunable bandpass filter by using a liquid crystal material, and changes the dielectric constant of the liquid crystal material of the liquid crystal layer by applying a voltage to the first electrode and the second electrode, thereby tuning the operating frequency band of the bandpass filter.
In an exemplary embodiment, an orthographic projection of the first electrode on the first substrate at least partially overlaps an orthographic projection of the second electrode on the first substrate. For example, the orthographic projection of the first electrode on the first substrate may completely coincide with the orthographic projection of the second electrode on the first substrate. However, the present disclosure is not limited thereto.
In an exemplary embodiment, the first electrode includes: a plurality of parallel strip transmission lines; a first capacitor is formed between any two adjacent strip transmission lines. In the exemplary embodiment, two adjacent strip transmission lines may form a first-order bandpass filter, and a multi-order bandpass filter is implemented by providing multiple strip transmission lines, for example, a microstrip interdigital filter with an adjustable operating frequency band may be implemented by providing multiple strip transmission lines.
In an exemplary embodiment, the spacing distance between any two adjacent strip transmission lines is the same. However, the present disclosure is not limited thereto. In other implementations, the separation distance between any two adjacent strip transmission lines may be different.
In an exemplary embodiment, the multi-strip transmission line may include: at least one first transmission line and one second transmission line; each first transmission line is coupled with the ground electrode, and each first transmission line and the ground electrode covered by the orthographic projection of each first transmission line on the first substrate form a second capacitor.
In an exemplary embodiment, the plurality of strip transmission lines are arranged in parallel along a first direction, the lengths of the plurality of strip transmission lines along the first direction are the same, and a separation distance between any two adjacent strip transmission lines along the first direction is smaller than the length of the strip transmission lines along the first direction. However, the present disclosure is not limited thereto. For example, the lengths of the plurality of strip transmission lines in the first direction may be different.
In an exemplary embodiment, the band pass filter may further include: a port electrode and a connection electrode; the two ends of the first electrode are respectively coupled with the port electrodes through the connecting electrodes. In the present exemplary embodiment, both ends of the first electrode are respectively coupled to the port electrode through the connection electrode to receive the input signal and transmit the output signal through the port electrode.
In an exemplary embodiment, the first electrode is configured to receive a bias voltage and the second electrode is configured to be grounded, or the first electrode is configured to be grounded and the second electrode is configured to receive a bias voltage. In the exemplary embodiment, by applying a voltage to the first electrode and the second electrode and controlling the magnitude of the applied voltage, the dielectric constant of the liquid crystal layer between the first electrode and the second electrode can be changed, thereby adjusting the operating frequency band of the band pass filter.
The bandpass filter provided by the embodiments of the present disclosure is explained below by some examples.
Fig. 1 is a top view of a bandpass filter according to an embodiment of the present disclosure. FIG. 2 is a schematic cross-sectional view along the direction AA in FIG. 1; fig. 3 is a schematic cross-sectional view in the BB direction in fig. 1. As shown in fig. 1, 2 and 3, a bandpass filter provided by an embodiment of the present disclosure includes: a first substrate and a second substrate disposed opposite to each other, and a liquid crystal layer 130 between the first substrate and the second substrate; the first substrate includes a first substrate 110, and a first electrode 111 and a ground electrode 113 disposed on the first substrate 110, wherein the first electrode 111 is located on a side of the first substrate 110 close to the liquid crystal layer 130, and the ground electrode 113 is located on a side of the first substrate 110 away from the liquid crystal layer 130; the second substrate includes a second substrate 120 and a second electrode 122 disposed on the second substrate 120, the second electrode 122 being located on a side of the second substrate 120 close to the liquid crystal layer 130.
In the present embodiment, the thickness range of the first electrode 111 and the second electrode 122 may be greater than 1 micrometer. However, the present disclosure is not limited thereto.
Fig. 4 is a top view of a first substrate provided in an embodiment of the disclosure. As shown in fig. 4, the first electrode 111 includes four strip lines arranged in parallel along the first direction F1. The four strip transmission lines are all parallel to the second direction F2, the second direction F2 is in the same plane as the first direction F1, and the second direction F2 is perpendicular to the first direction F1. In the present example, the spacing distance between any two adjacent strip transmission lines is the same in the first direction F1. However, the present disclosure is not limited thereto. In other implementations, the separation distance between any two adjacent strip transmission lines may be different in the first direction F1.
As shown in fig. 4, the lengths of the four strip lines in the first direction F1 are the same, i.e., the widths of the different strip lines are the same. However, the present disclosure is not limited thereto. In other implementations, the widths of different strip transmission lines may be different.
As shown in fig. 4, in the first direction F1, the spacing distance between any two adjacent strip transmission lines is smaller than the length of the strip transmission line in the first direction F1 (i.e., the width of the strip transmission line). However, the present disclosure is not limited thereto.
As shown in fig. 1, 3 and 4, the four strip transmission lines may include three first transmission lines 111a and one second transmission line 111 b; wherein the three first transmission lines 111a are all coupled to the ground electrode 113, and the second transmission line 111b is not coupled to the ground electrode 113.
As shown in fig. 3, each first transmission line 111a may be equivalent to a first inductance L1; each first transmission line 111a is coupled to the ground electrode 113 to form a second inductor L2; a first capacitor C1 is formed between two adjacent transmission lines; the overlapping of the first transmission line 111a and the ground electrode 113 may form a second capacitor C2, i.e. the first transmission line 111a and the ground electrode 113 covered by its orthographic projection on the first substrate 110 form a second capacitor C2. Fig. 5 is an equivalent circuit diagram of a bandpass filter provided in an embodiment of the present disclosure. As shown in fig. 3 and fig. 5, the bandpass filter provided in this embodiment is a three-stage bandpass filter, each stage of bandpass filter includes a first inductor L1, a second inductor L2, a first capacitor C1, and a second capacitor C2; the second capacitor C2 and the second inductor L2 are connected in parallel and then connected in series with the first inductor L1 and the first capacitor C1. In this example, each stage of bandpass filter is equivalently obtained by two parallel strip transmission lines. And equivalently obtaining the three-stage band-pass filter through the four strip transmission lines. In other words, for the N-stage band pass filter, the equivalent can be obtained by N +1 parallel strip transmission lines, where N is an integer greater than 0, and N adjacent strip transmission lines in the N +1 parallel strip transmission lines are respectively coupled to the ground electrode.
In this embodiment, the size of the capacitance formed between two adjacent strip transmission lines can be determined according to the following equation: c ═ epsilon S/4 pi kd; wherein C is a capacitance value, ε is a dielectric constant of the liquid crystal layer between adjacent strip transmission lines, S is a facing area between the adjacent strip transmission lines, d is a spacing distance between the adjacent strip transmission lines, and k is an electrostatic force constant. It follows that the capacitance value can be adjusted by adjusting the dielectric constant of the liquid crystal layer between adjacent transmission lines, with the positive area and the spacing distance between the strip transmission lines determined.
As shown in fig. 1 to 4, an orthographic projection of the second electrode 122 on the first substrate 110 covers an orthographic projection of the first electrode 111 on the first substrate 110. However, the present disclosure is not limited thereto. As long as the orthographic projection of the second electrode 122 on the first substrate 110 overlaps with the orthographic projection of the first electrode 111 on the first substrate 110, changing the dielectric constant of the liquid crystal material of the liquid crystal layer 130 can be achieved by supplying voltages of different magnitudes to the overlapping first and second electrodes 111 and 122.
In this example, as shown in fig. 2 and fig. 3, by configuring the second electrode 122 to be grounded and providing a bias voltage to the first electrode 111 (providing a bias voltage to each strip transmission line), a bias electric field may be formed between the second electrode 122 and the first electrode 111, so as to drive liquid crystal molecules in the liquid crystal layer 130 to deflect and change the dielectric constant of the liquid crystal layer 130, and further adjust the size of the first capacitor C1 (equivalently obtained by adjacent strip transmission lines) in the equivalent circuit, thereby implementing a change of the zero point of the band pass filter in frequency to adjust the operating frequency band of the band pass filter. Because the bias voltage provided to the first electrode 111 can be continuously changed, the band-pass filter can be continuously adjustable in frequency, so that the working frequency band translation is accurately realized, and the band-pass filter has good use value. However, the present disclosure is not limited thereto. For example, the first electrode may be configured to be grounded and a bias voltage may be provided to the second electrode. Alternatively, the second voltage may be provided to the second electrode, and the first voltage may be provided to the first electrode, and a voltage value of the first voltage is greater than a voltage value of the second voltage.
In this embodiment, the liquid crystal layer 130 may be formed of a single liquid crystal material having a large anisotropy, such as a nematic liquid crystal, or a mixed liquid crystal material (mixed crystal) as long as it can serve as a control medium. The thickness of the liquid crystal layer 130 may be determined according to actual requirements, for example, the thickness of the liquid crystal layer 130 may range from 5 to 100 micrometers.
As shown in fig. 1 to 4, the first substrate may further include: two port electrodes 114 and two connection electrodes 115; one port electrode 114 is coupled to the second transmission line 111b at one end of the first electrode 111 through the connection electrode 115, and the other port electrode 114 is coupled to one first transmission line 111a at the other end of the first electrode 111 through the connection electrode 115. The port electrode 114 may be disposed on the same layer as the first electrode 111, and the connection electrode 115 may be disposed on the same layer as the ground electrode 113. In this example, the two port electrodes 114 are the input port and the output port of the band pass filter, respectively. For example, the port electrode 114 adjacent to the second transmission line 111b is an input port, and the port electrode 114 adjacent to the first transmission line 111a is an output port.
The technical solution of this embodiment is further described below by the preparation process of the band-pass filter provided in this embodiment. The "patterning process" referred to in this embodiment includes processes of depositing a film, coating a photoresist, exposing a mask, developing, etching, and stripping a photoresist, and is a well-established manufacturing process. The deposition may be performed by known processes such as sputtering, evaporation, chemical vapor deposition, etc., the coating may be performed by known coating processes, and the etching may be performed by known methods, which are not limited herein. In the description of the present embodiment, it is to be understood that "thin film" refers to a layer of a material deposited or otherwise formed on a substrate. The "thin film" may also be referred to as a "layer" if it does not require a patterning process throughout the fabrication process. If a patterning process is required for the "thin film" during the entire fabrication process, the "thin film" is referred to as a "thin film" before the patterning process and the "layer" after the patterning process. The "layer" after the patterning process includes at least one "pattern".
(1) A first substrate is prepared. Preparing the first substrate may include: depositing a first metal thin film on the first surface of the first substrate 110, and patterning the first metal thin film through a patterning process to form a ground electrode 113 and a connection electrode 115 pattern; punching a second surface of the first substrate 110 to form a plurality of first via holes and second via holes, wherein the first via holes expose the ground electrodes 113 formed on the first surface, the second via holes expose the connection electrodes 115 formed on the first surface, and the second surface and the first surface are two surfaces of the first substrate 110 that are away from each other; a second metal film is deposited on the first substrate 110 where the aforementioned structure is formed, and the second metal film is patterned through a patterning process to form a first electrode 111 and a port electrode 114 pattern, as shown in fig. 3. The first electrode 111 may be coupled to the ground electrode 113 through a first via, and may also be coupled to the connection electrode 115 through a second via. In this example, the first electrode 111 includes three first transmission lines 111a and one second transmission line 111b, the second transmission line 111b is coupled with the connection electrode 115 through a second via, each of the first transmission lines 111a is coupled with the ground electrode 113 through a first via, and one of the first transmission lines 111a farthest from the second transmission line 111b is coupled with the connection electrode 115 through a second via. The port electrode 114 is coupled with the connection electrode 115 through a second via.
The first substrate may be made of Polyimide (PI), polyethylene terephthalate (PET), or a surface-treated polymer film, or may be made of glass or ceramic.
The first metal film and the second metal film may be made of a metal material, such as silver (Ag), copper (Cu), aluminum (Al), molybdenum (Mo), or an alloy material of the above metals, such as aluminum neodymium alloy (AlNd), molybdenum niobium alloy (MoNb), or the like, may be a multilayer metal, such as Mo/Cu/Mo, or may be a stack structure formed by a metal and a transparent conductive material, such as ITO/Ag/ITO, or the like.
(2) A second substrate is prepared. Preparing a second substrate comprising: a third metal film is deposited on the second substrate 120 and patterned through a patterning process to form a second electrode 122 pattern, as shown in fig. 3.
The second substrate 120 may be made of Polyimide (PI), polyethylene terephthalate (PET), or a surface-treated polymer film, or may be made of glass, ceramic, or the like.
The third metal film may be made of a metal material, such as silver (Ag), copper (Cu), aluminum (Al), molybdenum (Mo), or an alloy material of the above metals, such as aluminum neodymium alloy (AlNd), molybdenum niobium alloy (MoNb), or a multilayer metal, such as Mo/Cu/Mo, or a stack structure formed by a metal and a transparent conductive material, such as ITO/Ag/ITO.
(3) A liquid crystal layer is interposed between the first substrate and the second substrate. Sandwiching the liquid crystal layer between the first substrate and the second substrate may include: the packaging material is pressed between the first substrate and the second substrate to form a packaging layer 150, a liquid crystal cavity is formed between the packaging layer 150 and the two substrates, and the liquid crystal cavity is filled with the liquid crystal material to form a liquid crystal layer 130, as shown in fig. 3. The liquid crystal material can be limited in the liquid crystal cavity through the packaging layer 150, and the leakage phenomenon cannot occur. Wherein the first electrode 111 on the first substrate 110 faces the second electrode 122 on the second substrate 120.
In some examples, a first alignment layer may be formed on a first substrate; a second alignment layer is formed on the second substrate. For example, a transparent first alignment layer is formed by coating a transparent first alignment layer on a first substrate, curing the first alignment layer, and aligning the cured first alignment layer by an alignment technique. The alignment technology may include: the rubbing alignment technology and the ultraviolet illumination alignment technology can form grooves on the surface of the first alignment layer through the alignment technology, and the grooves are used for aligning liquid crystal molecules so that the liquid crystal molecules are arranged along a certain direction. The first alignment film may be made of polyimide, polyamide, polyethylene, polystyrene, or polyvinyl alcohol. However, the present disclosure is not limited thereto. Similarly, a second alignment layer may be formed on the second substrate. The liquid crystal molecules in the liquid crystal layer can be aligned through the first alignment layer and the second alignment layer, so that the liquid crystal molecules in the liquid crystal layer have a certain initial deflection angle, the liquid crystal molecules are convenient to deflect under the driving of the bias voltages of the first electrode and the second electrode, and the response speed can be improved.
As can be seen from the structure and the preparation process of the band-pass filter, the band-pass filter with the adjustable working frequency band can be prepared by the display panel technology, and the band-pass filter is good in process compatibility, high in process realizability, strong in practicability and good in application prospect.
The structure (or method) shown in this embodiment mode can be combined with the structure (or method) shown in other embodiment modes as appropriate.
In use, the bandpass filter provided in this embodiment may configure the second electrode to be grounded (for example, connected to a ground), and provide a bias voltage to the first electrode, so that a voltage difference is formed between the first electrode and the second electrode, and a bias electric field is generated, thereby changing the dielectric constant of the liquid crystal layer; the capacitance value of the first capacitance C1 formed between two adjacent transmission lines is adjusted by changing the dielectric constant of the liquid crystal layer. By adjusting the capacitance value of the first capacitor C1 in the equivalent circuit diagram, the change of the zero point of the band-pass filter in frequency can be realized, and thus the adjustment of the operating frequency band of the band-pass filter can be realized. In addition, as the bias voltage provided for the first electrode can be continuously changed, the band-pass filter can be continuously adjustable in frequency, the translation of the working frequency band can be accurately realized, and the high-frequency band-pass filter has good use value.
Fig. 8 is a diagram of simulation results of S11 of the bandpass filter provided in this embodiment during frequency adjustment. As shown in fig. 8, the solid line L11, the dotted line L12, the chain line L13, the chain double-dashed line L14, and the broken line L15 respectively represent reflection losses at the input port of the bandpass filter when the dielectric constant of the liquid crystal layer is Er, Er +0.2, Er +0.4, Er +0.6, and Er +0.8, where Er is the relative dielectric constant of the liquid crystal layer. Wherein, the smaller S11 is, the more signals can be received by the band-pass filter, and the better the performance is.
Fig. 9 is a diagram of simulation results of S21 of the bandpass filter provided in this embodiment during frequency adjustment. As shown in fig. 9, the solid line L21, the dotted line L22, the chain line L23, the chain double-dashed line L24, and the broken line L25 respectively represent the in-band attenuation of the bandpass filter when the liquid crystal layer has dielectric constants of Er, Er +0.2, Er +0.4, Er +0.6, and Er +0.8, where Er is the relative dielectric constant of the liquid crystal layer. The larger S21 is, the smaller the loss of the signal entering the output port is.
As can be seen from fig. 8 and 9, the bandpass filter provided in this embodiment has different filtering frequency ranges under different dielectric constants of the liquid crystal layer, and the dielectric constant is continuously adjustable, so that the adjustment accuracy of the operating frequency of the bandpass filter can be improved compared with a digital adjustable filter.
Fig. 6 is a schematic top view of a bandpass filter according to another embodiment of the disclosure. Fig. 7 is a schematic cross-sectional view in the BB direction of fig. 6. The main structure of the bandpass filter provided in this embodiment is substantially the same as the embodiment described in fig. 1, except that: in this embodiment, an orthographic projection of the second electrode on the first substrate coincides with an orthographic projection of the first electrode on the first substrate, and the connection electrode and the first electrode are disposed in the same layer.
As shown in fig. 6 and 7, in the present example, an orthographic projection of the second electrode 122 on the first substrate 110 coincides with an orthographic projection of the first electrode 111 on the first substrate 110, that is, a top view pattern of the second electrode 122 may coincide with a top view pattern of the first electrode 111.
In this example, the process of preparing the first substrate may include: depositing a first metal thin film on the first surface of the first substrate 110, and patterning the first metal thin film through a patterning process to form a ground electrode 113 pattern; forming a hole and a groove on the second surface of the first substrate 110 to form a first via hole and a first groove, wherein the first via hole exposes the ground electrode 113 formed on the first surface; a second metal film is deposited on the first substrate 110 on which the aforementioned structure is formed, and the second metal film is patterned through a patterning process to form a first electrode 111, a connection electrode 115, and a port electrode 114 pattern, as shown in fig. 7. The first electrode 111 is coupled to the ground electrode 113 through a first via, the connection electrode 115 is located in the first groove, and two ends of the connection electrode 115 are coupled to the first electrode 111 and the port electrode 114, respectively.
In this embodiment, the bandpass filter may also be implemented by interposing a liquid crystal layer between the first substrate and the second substrate, and adjusting the operating frequency band of the bandpass filter by changing the dielectric constant of the liquid crystal layer.
The structure (or method) shown in this embodiment mode can be combined with the structure (or method) shown in other embodiment modes as appropriate.
The embodiment of the present disclosure further provides a method for manufacturing a band-pass filter, including: preparing a first substrate, wherein the first substrate comprises a first substrate and a first electrode and a ground electrode which are arranged on two opposite sides of the first substrate, and the first electrode is coupled with the ground electrode; preparing a second substrate, wherein the second substrate comprises a second base and a second electrode arranged on the second base; a liquid crystal layer is clamped between the first substrate and the second substrate, the first electrode is positioned between the first substrate and the liquid crystal layer, and the second electrode is positioned between the second substrate and the liquid crystal layer; the dielectric constant of the liquid crystal layer changes along with the voltage change between the second electrode and the first electrode, and the working frequency band of the band-pass filter changes along with the dielectric constant change of the liquid crystal layer.
In an exemplary embodiment, an orthographic projection of the first electrode on the first substrate at least partially overlaps an orthographic projection of the second electrode on the first substrate.
The preparation process of the band pass filter has been described in detail in the previous embodiments, and is not described herein again.
The embodiment of the present disclosure further provides a method for driving the band pass filter, including: applying a voltage to the first electrode and the second electrode to change a dielectric constant of the liquid crystal layer between the first electrode and the second electrode; and controlling the voltage applied to the first electrode or the second electrode to adjust the working frequency band of the band-pass filter.
The driving method and principle of the band pass filter have been described in detail in the previous embodiments, and are not described herein again.
An embodiment of the present disclosure also provides an electronic device including the band pass filter as described above. The electronic device may be any device including a tunable bandpass filter, such as an electronically controlled scanning antenna, a radar system, an accelerator, a communication base station, a power divider, and the like, which is not limited in this disclosure. The electronic device may further comprise further components, and the connection relationship between the respective components and the tunable bandpass filter is not limited.
In the description of the embodiments of the present disclosure, it is to be understood that the terms "middle", "upper", "lower", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on those shown in the drawings, are only for convenience in describing the present disclosure and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be taken as limiting the present disclosure.
In the description of the embodiments of the present disclosure, it should be noted that the terms "mounted," "connected," and "connected" are to be construed broadly unless otherwise specifically stated or limited. For example, the connection can be fixed, detachable or integrated; can be mechanically or electrically connected; either directly or indirectly through intervening components, or may be interconnected between two elements. The meaning of the above terms in the present disclosure can be understood by those of ordinary skill in the art as appropriate.
Although the embodiments disclosed in the present disclosure are described above, the descriptions are only for the convenience of understanding the present disclosure, and are not intended to limit the present disclosure. It will be understood by those skilled in the art of the present disclosure that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure, and that the scope of the disclosure is to be limited only by the terms of the appended claims.
Claims (11)
1. A bandpass filter, comprising:
the liquid crystal display panel comprises a first substrate, a second substrate and a liquid crystal layer, wherein the first substrate and the second substrate are oppositely arranged, and the liquid crystal layer is positioned between the first substrate and the second substrate; the first substrate comprises a first substrate, and a first electrode and a ground electrode which are arranged on the first substrate, wherein the first electrode is positioned on one side of the first substrate close to the liquid crystal layer, the ground electrode is positioned on one side of the first substrate far away from the liquid crystal layer, and the first electrode is coupled with the ground electrode; the second substrate comprises a second substrate and a second electrode arranged on the second substrate, and the second electrode is positioned on one side, close to the liquid crystal layer, of the second substrate; an orthographic projection of the first electrode on the first substrate at least partially overlaps with an orthographic projection of the second electrode on the first substrate;
the dielectric constant of the liquid crystal layer changes along with the voltage change between the first electrode and the second electrode, and the working frequency band of the band-pass filter changes along with the dielectric constant change of the liquid crystal layer.
2. The bandpass filter according to claim 1, wherein the first electrode comprises: a plurality of parallel strip transmission lines; a first capacitor is formed between any two adjacent strip transmission lines.
3. The bandpass filter according to claim 2, wherein the spacing distance between any two adjacent strip transmission lines is the same.
4. The bandpass filter according to claim 2, wherein the plurality of strip transmission lines comprises: at least one first transmission line and one second transmission line; each first transmission line is coupled with the ground electrode, and each first transmission line and the ground electrode covered by the orthographic projection of each first transmission line on the first substrate form a second capacitor.
5. The bandpass filter according to claim 2, wherein the plurality of strip transmission lines are arranged in parallel along a first direction, the plurality of strip transmission lines have the same length along the first direction, and any two adjacent strip transmission lines are spaced apart from each other along the first direction by a distance smaller than the length of the strip transmission lines along the first direction; the first direction is perpendicular to a signal transmission direction within the strip transmission line.
6. The bandpass filter according to claim 1, wherein the bandpass filter further comprises: a port electrode and a connection electrode; and two ends of the first electrode are respectively coupled with the port electrode through the connecting electrode.
7. The bandpass filter according to claim 1, wherein the first electrode is configured to receive a bias voltage and the second electrode is configured to be grounded, or wherein the first electrode is configured to be grounded and the second electrode is configured to receive a bias voltage.
8. A driving method of a band pass filter according to any one of claims 1 to 7, comprising:
applying a voltage to the first and second electrodes to change a dielectric constant of a liquid crystal layer between the first and second electrodes;
and controlling the voltage applied to the first electrode or the second electrode so as to adjust the working frequency band of the band-pass filter.
9. An electronic device, characterized in that it comprises a band-pass filter according to any one of claims 1 to 7.
10. A method of making a band-pass filter, comprising:
preparing a first substrate, wherein the first substrate includes a first base and first and ground electrodes disposed at opposite sides of the first base, the first electrode being coupled to the ground electrode;
preparing a second substrate, wherein the second substrate includes a second base and a second electrode disposed on the second base;
a liquid crystal layer is sandwiched between the first substrate and the second substrate, the first electrode is positioned between the first substrate and the liquid crystal layer, and the second electrode is positioned between the second substrate and the liquid crystal layer;
the dielectric constant of the liquid crystal layer changes along with the voltage change between the second electrode and the first electrode, and the working frequency band of the band-pass filter changes along with the dielectric constant change of the liquid crystal layer.
11. The method of claim 10, wherein an orthographic projection of the first electrode on the first substrate at least partially overlaps an orthographic projection of the second electrode on the first substrate.
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| CN113764842B (en) * | 2020-06-01 | 2022-06-24 | 上海天马微电子有限公司 | Phase shifter, manufacturing method thereof and antenna |
| WO2023240463A1 (en) * | 2022-06-14 | 2023-12-21 | 京东方科技集团股份有限公司 | Adjustable radio-frequency unit, filter and electronic device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6819393B1 (en) * | 1998-07-28 | 2004-11-16 | Nippon Telegraph And Telephone Corporation | Optical device and display apparatus using light diffraction and light guide |
| CN101846270A (en) * | 2009-01-05 | 2010-09-29 | 索尼公司 | Illuminating device and display device |
| CN205015575U (en) * | 2015-10-16 | 2016-02-03 | 南开大学 | Tunable wavelength's glass liquid crystal optics filter configuration |
| CN107077037A (en) * | 2014-08-20 | 2017-08-18 | 三星电子株式会社 | Display device and for this manufacture method |
| CN108493528A (en) * | 2018-06-08 | 2018-09-04 | 京东方科技集团股份有限公司 | Tunable band-stop filter and its driving method and electronic device |
| CN108693583A (en) * | 2017-04-11 | 2018-10-23 | 徕卡仪器（新加坡）有限公司 | More band logical liquid crystal tunable filters |
| CN110568536A (en) * | 2018-06-06 | 2019-12-13 | 唯亚威通讯技术有限公司 | Liquid crystal selectable band-pass filter |
| CN110658646A (en) * | 2018-08-10 | 2020-01-07 | 北京京东方传感技术有限公司 | Phase shifter and liquid crystal antenna |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2002909C (en) * | 1988-12-15 | 1994-12-27 | John E. Gunther | Projection display using liquid crystal device with reflective color filters |
| JP2587743B2 (en) * | 1990-08-31 | 1997-03-05 | ベル コミュニケーションズ リサーチ インコーポレーテッド | Tunable liquid crystal etalon filter |
| KR100668140B1 (en) * | 2005-11-11 | 2007-01-16 | 비오이 하이디스 테크놀로지 주식회사 | Vertical alignment mode liquid crystal display |
| JP4471014B2 (en) * | 2008-04-04 | 2010-06-02 | ソニー株式会社 | Liquid crystal display device, backlight light source and optical film |
| CN101299127A (en) * | 2008-06-13 | 2008-11-05 | 哈尔滨工业大学 | Weak signal amplifier using laminar compound liquid-crystal film and manufacture method thereof |
| CN101799596B (en) * | 2010-03-12 | 2011-12-28 | 无锡市奥达光电子有限责任公司 | Liquid crystal tunable wave filter and configuration method thereof |
| CN108711669B (en) * | 2018-05-28 | 2021-04-23 | 京东方科技集团股份有限公司 | Frequency-adjustable antenna and manufacturing method thereof |
| CN108615966B (en) * | 2018-05-28 | 2020-06-30 | 京东方科技集团股份有限公司 | Antenna and manufacturing method thereof |
-
2020
- 2020-02-26 CN CN202010119373.6A patent/CN111193083B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6819393B1 (en) * | 1998-07-28 | 2004-11-16 | Nippon Telegraph And Telephone Corporation | Optical device and display apparatus using light diffraction and light guide |
| CN101846270A (en) * | 2009-01-05 | 2010-09-29 | 索尼公司 | Illuminating device and display device |
| CN107077037A (en) * | 2014-08-20 | 2017-08-18 | 三星电子株式会社 | Display device and for this manufacture method |
| CN205015575U (en) * | 2015-10-16 | 2016-02-03 | 南开大学 | Tunable wavelength's glass liquid crystal optics filter configuration |
| CN108693583A (en) * | 2017-04-11 | 2018-10-23 | 徕卡仪器（新加坡）有限公司 | More band logical liquid crystal tunable filters |
| CN110568536A (en) * | 2018-06-06 | 2019-12-13 | 唯亚威通讯技术有限公司 | Liquid crystal selectable band-pass filter |
| CN108493528A (en) * | 2018-06-08 | 2018-09-04 | 京东方科技集团股份有限公司 | Tunable band-stop filter and its driving method and electronic device |
| CN110658646A (en) * | 2018-08-10 | 2020-01-07 | 北京京东方传感技术有限公司 | Phase shifter and liquid crystal antenna |
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| Publication number | Publication date |
|---|---|
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