CN111191363A - Design method of on-chip antenna based on artificial magnetic conductor and dielectric resonator - Google Patents
Design method of on-chip antenna based on artificial magnetic conductor and dielectric resonator Download PDFInfo
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Abstract
The invention provides a design method of an on-chip antenna based on an artificial magnetic conductor and a dielectric resonator, which comprises the following steps: calculating the structural parameters of the monopole antenna; calculating the structural parameters of the artificial magnetic conductor unit; calculating structural parameters of the dielectric resonator; optimizing the artificial magnetic conductor unit; loading and optimizing an array of artificial magnetic conductors; optimizing the structural parameters of the monopole antenna; adjusting the structural parameters of the dielectric resonator to enable the eigenfrequency of the dielectric resonator to reach the working frequency, loading the dielectric resonator, judging whether the working frequency and the gain of the antenna meet the requirements, if so, obtaining an on-chip antenna structure loaded with the artificial magnetic conductor and the dielectric resonator, otherwise, adjusting the effective length L of the dielectric resonator and the monopole antennaeffThe antenna working frequency and the gain meet the requirements. The on-chip antenna realizes the gain of 1.74dB and the radiation efficiency of 60.01 percent。
Description
Technical Field
The invention belongs to the technical field of antennas, and particularly relates to a design method of an on-chip antenna based on an artificial magnetic conductor and a dielectric resonator. The method can be applied to the design method of the on-chip antenna structure of the CMOS process.
Background
With the rapid growth of the wireless communication market, the millimeter wave technology is widely applied, and the on-chip integrated antenna based on the CMOS process has the advantages of small volume, easy integration with a radio frequency front-end circuit and the like. Artificial magnetic conductor, amc (artificial magnetic conductor) structures, are one type of metamaterial that can replace perfect conductor (PEC) planes as low profile antennas and can enhance antenna performance. The artificial magnetic conductor structure is characterized in that an isolation layer is added between a silicon substrate and a functional circuit layer, so that the loss of the silicon substrate to high-frequency electromagnetic waves is reduced. The isolation effect is that due to the reflection phase band gap characteristic of the artificial magnetic conductor, when the incident wave frequency is close to the resonant frequency of the artificial magnetic conductor structure, the surface impedance of the artificial magnetic conductor structure is very high, so that the phase difference between the reflected wave and the incident wave when the plane wave enters the surface of the artificial magnetic conductor is 0, when the incident electromagnetic wave frequency enables the surface impedance of the artificial magnetic conductor to be equal to the free space impedance, the phase difference between the incident wave and the reflected wave is +/-90 degrees, the artificial magnetic conductor structure is designed, and the isolation of the incident electromagnetic wave can be realized when the phase difference between the incident wave and the reflected wave is +/-90 degrees.
However, in the CMOS process-based on-chip antenna, since the silicon substrate has a high dielectric constant and conductivity, the radiation energy of the on-chip antenna is seriously affected, resulting in low gain and radiation efficiency of the antenna, and failing to meet the technical index requirements of short-distance wireless communication. Currently, there is no systematic design method for CMOS process based on-chip antennas. And (3) simulating by using an electromagnetic numerical technology, adjusting the structural parameters of the on-chip antenna according to the simulation result, recalculating and performing simulation adjustment, repeating the steps for multiple times, and obtaining lower gain and lower radiation efficiency of the on-chip antenna.
For example, the article "a 60-GHz Gain enhanced vivaldi Antenna On-Chip" (IEEE International Symposium On Antenna and propagation and USNC/URSI National Radio Science Meeting, 2018) published by k.s. supllan, h.h.abdullah et al, proposes a method for designing an On-Chip slot Antenna, which achieves an Antenna Gain of 0.7dBi and a radiation efficiency of 37% without changing the conventional structure of CMOS process by inserting a parasitic element into the slot at the edge of the Antenna radiation patch and loading a reflector On a planar Antenna. However, the method has high requirements on the processing technology of slotting the edge of the antenna radiation patch, and the method has low antenna gain and radiation efficiency.
For example, b.b. adela, p.van Zeijl, etc. proposed a design method of an antenna On a PCB package in "On-Chip antenna integration for single-Chip millimeter-wave FMCW radars" (2015 for 9th European Conference On antenna and Propagation), which uses the PCB environment of the package to reduce the back radiation power of the antenna On the Chip, thereby improving the gain and efficiency of the antenna On the Chip and achieving 41% radiation efficiency. However, this method limits the manufacturing environment of the on-chip antenna, changes the traditional CMOS process structure, and the antenna radiation efficiency is low.
In summary, the conventional on-chip antenna design method has the problems of low antenna gain and low radiation efficiency.
Disclosure of Invention
The invention aims to provide a design method of an on-chip antenna based on an artificial magnetic conductor and a dielectric resonator aiming at the defects in the prior art, so as to solve the problems of low antenna gain and radiation efficiency and the like in the design of the on-chip antenna in the prior art.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a design method of an on-chip antenna based on an artificial magnetic conductor and a dielectric resonator is characterized by comprising the following steps:
(1) calculating structural parameters of monopole antenna
1a) Determining the working frequency f of the antenna and the effective dielectric constant epsilon of the substrateeffCalculating the effective antenna length L of the monopole antennaeff；
1b) Determining the geometry of the monopole antenna;
1c) calculating the effective length LeffOriginal parameters of each component;
(2) it doesDetermining the height h and the dielectric constant epsilon of the substraterCalculating the structural parameters of the artificial magnetic conductor unit according to the bandwidth BW of the artificial magnetic conductor unit;
(3) determining the dielectric constant epsilon of the material of a dielectric resonatorlCalculating the structural parameters of the dielectric resonator according to the original shape;
(4) optimization of artificial magnetic conductor unit:
4a) taking the side length W of the metal sheet of the artificial magnetic conductor and the gap g between the adjacent metal sheets obtained by calculation as initial values of the artificial magnetic conductor unit;
4b) loading the artificial magnetic conductor unit on a metal layer at the bottom layer of the CMOS process;
4c) fine-tuning parameters of the artificial magnetic conductor unit by adopting an electromagnetic numerical simulation technology, and adjusting the side length W of the metal sheet of the artificial magnetic conductor and the gap g between adjacent metal sheets;
(5) loading an array of artificial magnetic conductors:
5a) loading an NxM personal artificial magnetic conductor array on a metal layer at the bottom layer of a CMOS (complementary metal oxide semiconductor) process, wherein M is the number of antennas in the effective length direction, N is the number of antennas perpendicular to the effective length direction, and N is less than M;
5b) taking the structural parameters of the monopole antenna as initial values, and loading the monopole antenna on a metal layer at the top layer of the CMOS process;
5c) optimizing the arrangement mode of the metal layers loaded on the bottom layer of the CMOS process, and obtaining the maximum gain value on the working frequency of the monopole antenna by increasing the number M in the effective length direction of the antenna and reducing the number N vertical to the effective length direction of the antenna;
(6) and (3) monopole antenna structure parameter optimization:
6a) adjusting the size of the monopole antenna radiation patch, and changing the geometric area of the radiation patch;
6b) obtaining antenna gain on the working frequency according with the requirement;
6c) adjusting the size of the antenna feed part to enable the antenna working frequency to meet the requirement;
(7) loading the dielectric resonator:
7a) determining the geometric shape of the dielectric resonator, and taking the structural parameters of the dielectric resonator obtained by calculation as initial values;
7b) adjusting the structural parameters of the dielectric resonator to enable the eigenfrequency of the dielectric resonator to reach the working frequency;
7c) loading a dielectric resonator above the monopole antenna radiation patch, judging whether the antenna working frequency and the gain meet the requirements, if so, executing the step 7e), otherwise, executing the step 7 d);
7d) adjusting effective length L of dielectric resonator and monopole antennaeffThe antenna working frequency and the gain meet the requirements;
7e) and obtaining the on-chip antenna structure loaded with the artificial magnetic conductor and the dielectric resonator.
In the above claims, the monopole antenna described in step 1a) has an effective antenna length LeffCalculated as follows:
where c is the propagation velocity of electromagnetic waves in free space, f is the antenna operating frequency, εeffIs the effective dielectric constant of the substrate.
In the above claims, the monopole antenna radiating patch in step 1c) is circular and the effective length L is calculatedeffEach component is calculated as follows:
r＝4πlp
Leff＝2r+lp+lm
wherein r is the radius of the circular patch, d is the parasitic length l of the radiating patchmAnd length of strip at feed pointpThe ratio of (A) to (B);
in the above claims, the artificial magnetic conductor structure parameter in step (2) is expressed as a side length W of the metal sheet and a gap g between adjacent metal sheets, and is calculated according to the following formula:
L＝μh
wherein C, L is the equivalent capacitance and inductance of the artificial magnetic conductor unit structure respectively0Mu is the dielectric constant in vacuum and mu is the permeability.
In the above claim, in step (3), the original shape of the dielectric resonator is rectangular, and the structural parameters of the rectangular dielectric resonator are calculated according to the following formula:
0.4≤p≤1,0.2≤q≤1
s1＝-5.29q4+15.97q3-17.74q2+8.812q-3.198
s2＝0.2706q4-0.7232q3+0.7857q2-0.4558q-1.023
s3＝-8.03q4+23.06q3-24.53q2+11.75q-3.588
s4＝43.18q4-124.7q3+134.5q2-65.85q+15.37
wherein epsilonlIs the dielectric constant of the material of the rectangular dielectric resonator, p is the length-width ratio, q is the height-length ratio, a is the length, b is the width, h1Is high, s1、s2、s3And s4Which are respectively the four-degree-of-freedom limit values of the rectangular dielectric resonator.
In the above claims, the artificial magnetic conductor metal sheets in step 4c) have a side length W of 0.14mm and a gap g between adjacent metal sheets of 0.05 mm.
In the above claims, in step 5c), N ranges from 3 to 7, and M ranges from 8 to 16.
In the above claims, in step (6), the radius r of the circular radiation patch of the monopole antenna is 0.1mm, and the parasitic length l of the radiation patchmAnd length of strip at feed pointp0.15mm and 0.17mm respectively.
In the above claims, the dielectric resonator in step 7a) has a rectangular structure with a length a, a width b and a height h10.46mm, 0.67mm and 0.36mm, respectively.
In the above claims, the distance between the dielectric resonator and the monopole antenna in step 7d) is 0.185mm over the effective length.
Compared with the prior art, the invention has the following advantages
1. In the design method, the parameters of the artificial magnetic conductor unit are finely adjusted by adopting an electromagnetic numerical simulation technology in the step (4), the side length W of the metal sheet of the artificial magnetic conductor and the gap g between the adjacent metal sheets are adjusted, the determined artificial magnetic conductor unit can reflect surface incident waves at the working frequency, and the antenna and the silicon substrate are effectively isolated, so that the electromagnetic energy loss in the silicon substrate of the CMOS process is reduced.
2. In the design method, in the step (5), the density of the current in the silicon substrate can be reduced to the maximum extent by the determined arrangement mode of the artificial magnetic conductor arrays through increasing the number M in the effective length direction of the antenna and reducing the number N in the direction vertical to the effective length direction of the antenna, so that the loss of the radiation energy of the antenna in the silicon substrate is reduced, and the gain and the radiation efficiency of the antenna reach peak values at the working frequency.
3. In the design method, the dielectric resonator determined in the step (7) is coupled with the monopole antenna based on the artificial magnetic conductor at the working frequency, so that resonance is carried out, the gain and the radiation efficiency of the antenna reach 1.74dB and 60.01% respectively, and the technical problem of lower gain and radiation efficiency of the antenna in the prior art is solved.
Drawings
FIG. 1 is a flow chart of the present invention;
FIG. 2 is a structural view of an artificial magnetic conductor unit in the present invention;
FIG. 3 is a diagram of the reflection phase of the artificial magnetic conductor unit in the present invention;
FIG. 4 is a top view of an on-chip antenna of the present invention;
FIG. 5 is a simulation diagram of return loss of an on-chip antenna with an artificial magnetic conductor unit and a dielectric resonator loaded/unloaded according to the present invention;
FIG. 6 is a simulation diagram of E-plane radiation direction at 60GHz for an on-chip antenna with loaded/unloaded artificial magnetic conductor units and dielectric resonators according to the present invention;
FIG. 7 is a simulation diagram of the H-plane radiation direction at 60GHz for an on-chip antenna with loaded/unloaded artificial magnetic conductor units and dielectric resonators according to the present invention;
fig. 8 is a simulation diagram comparing the radiation efficiency of an on-chip antenna with an artificial magnetic conductor unit and a dielectric resonator loaded/unloaded according to the present invention.
Detailed Description
The invention is described in further detail below with reference to the attached drawing
With reference to fig. 1, 2, 3 and 4
Example 1:
a design method of an on-chip antenna based on an artificial magnetic conductor and a dielectric resonator is characterized by comprising the following steps:
(1) calculating structural parameters of monopole antenna
1a) Determining the working frequency f of the antenna and the effective dielectric constant epsilon of the substrateeffCalculating the effective antenna length L of the monopole antennaeff；
1b) Determining the geometry of the monopole antenna;
1c) calculating the effective length LeffOriginal parameters of each component;
(2) determining the height h and dielectric constant epsilon of the substraterAnd bandwidth BW of artificial magnetic conductor unit, calculating humanThe structure parameters of the work-magnet conductor unit;
(3) determining the dielectric constant epsilon of the material of a dielectric resonatorlCalculating the structural parameters of the dielectric resonator according to the original shape;
(4) optimization of artificial magnetic conductor unit:
4a) taking the side length W of the metal sheet of the artificial magnetic conductor and the gap g between the adjacent metal sheets obtained by calculation as initial values of the artificial magnetic conductor unit;
4b) loading the artificial magnetic conductor unit on a metal layer at the bottom layer of the CMOS process;
4c) fine-tuning parameters of the artificial magnetic conductor unit by adopting an electromagnetic numerical simulation technology, and adjusting the side length W of the metal sheet of the artificial magnetic conductor and the gap g between adjacent metal sheets;
(5) loading an array of artificial magnetic conductors:
5a) loading an NxM personal artificial magnetic conductor array on a metal layer at the bottom layer of a CMOS (complementary metal oxide semiconductor) process, wherein M is the number of antennas in the effective length direction, N is the number of antennas perpendicular to the effective length direction, and N is less than M;
5b) taking the structural parameters of the monopole antenna as initial values, and loading the monopole antenna on a metal layer at the top layer of the CMOS process;
5c) optimizing the arrangement mode of the metal layers loaded on the bottom layer of the CMOS process, and obtaining the maximum gain value on the working frequency of the monopole antenna by increasing the number M in the effective length direction of the antenna and reducing the number N vertical to the effective length direction of the antenna;
(6) and (3) monopole antenna structure parameter optimization:
6a) adjusting the size of the monopole antenna radiation patch, and changing the geometric area of the radiation patch;
6b) obtaining antenna gain on the working frequency according with the requirement;
6c) adjusting the size of the antenna feed part to enable the antenna working frequency to meet the requirement;
(7) loading the dielectric resonator:
7a) determining the geometric shape of the dielectric resonator, and taking the structural parameters of the dielectric resonator obtained by calculation as initial values;
7b) adjusting the structural parameters of the dielectric resonator to enable the eigenfrequency of the dielectric resonator to reach the working frequency;
7c) loading a dielectric resonator above the monopole antenna radiation patch, judging whether the antenna working frequency and the gain meet the requirements, if so, executing the step 7e), otherwise, executing the step 7 d);
7d) adjusting effective length L of dielectric resonator and monopole antennaeffThe antenna working frequency and the gain meet the requirements;
7e) and obtaining the on-chip antenna structure loaded with the artificial magnetic conductor and the dielectric resonator.
After the sizes of all parts in the system are obtained through calculation, the simulation of the artificial magnetic conductor units can simulate the reflection effect of incident waves when the artificial magnetic conductor units are periodically arranged, the side length W of the metal sheets of the artificial magnetic conductor and the gap g between the adjacent metal sheets are adjusted, the equivalent capacitance C and the equivalent inductance L of different artificial magnetic conductors are obtained, and the required working frequency and bandwidth can be obtained, so that the surface incident waves are reflected at the working frequency, and the electromagnetic energy loss of a silicon substrate in a CMOS (complementary metal oxide semiconductor) process is reduced.
The invention adopts the artificial magnetic conductor arrays with different sizes, and the radiation field of the monopole antenna can be changed. The artificial magnetic conductor array of the monopole antenna is optimized, wherein the direction of M is the current direction, so that the quantity M in the effective length direction of the antenna is increased, the quantity N perpendicular to the effective length direction of the antenna is reduced, the current density in the silicon substrate is reduced, the radiation energy loss of the monopole antenna in the silicon substrate is reduced, and the radiation efficiency and the gain of the antenna are improved.
And optimizing the structural parameters of the monopole antenna based on the optimized artificial magnetic conductor, wherein the size of the radiation patch corresponds to the gain magnitude of the antenna, so that the size of the feed part is adjusted after the size of the radiation patch meeting the gain requirement is selected, and the good impedance matching at the working frequency of the antenna is obtained.
Finally, loading a dielectric resonator above the monopole antenna based on the artificial magnetic conductor and finely adjusting the dielectric resonanceThe monopole antenna is at an effective length LeffAnd the distance between the monopole antenna and the silicon substrate is increased, so that secondary resonance occurs between the monopole antenna and the silicon substrate, the monopole antenna is guided to radiate electromagnetic waves upwards, the radiation energy loss in the silicon substrate is further reduced, and the gain and the radiation efficiency of the antenna are improved again.
Increasing the number M of the antennas in the effective length direction and reducing the number N of the antennas perpendicular to the effective length direction to obtain the maximum gain value of the monopole antenna on the working frequency;
the effective antenna length of the monopole antenna in the step 1a) is LeffCalculated as follows:
where c is the propagation velocity of electromagnetic waves in free space, f is the antenna operating frequency, εeffIs the effective dielectric constant of the substrate.
In step 1c), the monopole antenna radiation patch is circular, and the effective length L is calculatedeffEach component is calculated as follows:
r＝4πlp
Leff＝2r+lp+lm
wherein r is the radius of the circular patch, d is the parasitic length l of the radiating patchmAnd length of strip at feed pointpThe ratio of (A) to (B);
the structural parameters of the artificial magnetic conductor in the step (2) are expressed as the side length W of the metal sheet and the gap g between adjacent metal sheets, and are calculated according to the following formula:
L＝μh
wherein C, L is the equivalent capacitance and inductance of the artificial magnetic conductor unit structure respectively0Mu is the dielectric constant in vacuum and mu is the permeability.
In the step (3), the original shape of the dielectric resonator is rectangular, and the structural parameters of the rectangular dielectric resonator are calculated according to the following formula:
0.4≤p≤1,0.2≤q≤1
s1＝-5.29q4+15.97q3-17.74q2+8.812q-3.198
s2＝0.2706q4-0.7232q3+0.7857q2-0.4558q-1.023
s3＝-8.03q4+23.06q3-24.53q2+11.75q-3.588
s4＝43.18q4-124.7q3+134.5q2-65.85q+15.37
wherein epsilonlIs the dielectric constant of the material of the rectangular dielectric resonator, p is the length-width ratio, q is the height-length ratio, a is the length, b is the width, h1Is high, s1、s2、s3And s4Which are respectively the four-degree-of-freedom limit values of the rectangular dielectric resonator.
In the step 4c), the side length W of the metal sheets of the artificial magnetic conductor is 0.14mm, and the gap g between the adjacent metal sheets is 0.05 mm.
In the step 5c), the value range of N is 3-7, and the value range of M is 8-16.
The radius r of the circular radiation patch of the monopole antenna in the step (6) is 0.1mm, and the parasitic length l of the radiation patchmAnd length of strip at feed pointp0.15mm and 0.17mm respectively.
The dielectric resonator in the step 7a) is in a rectangular structure and has the length a, the width b and the height h10.46mm, 0.67mm and 0.36mm, respectively.
The distance between the dielectric resonator and the monopole antenna on the effective length in the step 7d) is 0.185 mm.
The present invention is further described in detail in connection with the simulation schematic diagram
With reference to fig. 5, 6, 7 and 8
Fig. 5 is a simulation diagram of return loss of an on-chip antenna with an artificial magnetic conductor unit and a dielectric resonator loaded/unloaded in the present invention, in which the abscissa represents frequency and the ordinate represents return loss, the solid line represents an on-chip antenna obtained based on the present design method, the resonance frequency is 60GHz, the dotted line represents an on-chip antenna with an artificial magnetic conductor unit and a dielectric resonator unloaded, and the resonance frequency is 65 GHz. Within the bandwidth range of 50GHz-70GHz, the return loss value of the on-chip antenna obtained based on the design method is obviously smaller than that of the on-chip antenna without the artificial magnetic conductor unit and the dielectric resonator, and the bandwidth of the on-chip antenna is also obviously improved.
Fig. 6 is a schematic diagram showing simulation of the E-plane radiation direction of the on-chip antenna with the loaded/unloaded artificial magnetic conductor unit and the dielectric resonator designed according to the present invention at 60GHz, where polar coordinates represent angles, vertical coordinates represent antenna gains, solid lines represent the on-chip antenna obtained based on the design method, and dotted lines represent the on-chip antenna with the unloaded artificial magnetic conductor unit and the dielectric resonator. Compared with the on-chip antenna without the artificial magnetic conductor unit and the dielectric resonator, the gain of the on-chip antenna obtained based on the method is obviously improved in most ranges, for example, the gain right above the antenna is improved to 1.74dBi from-0.22 dBi.
Fig. 7 is a simulation diagram of H-plane radiation direction at 60GHz of an on-chip antenna designed with a loaded/unloaded artificial magnetic conductor unit and a dielectric resonator according to the present invention, in which polar coordinates represent angles, and ordinate represents antenna gain, a solid line represents an on-chip antenna obtained based on the design method, and a dotted line represents an on-chip antenna with an unloaded artificial magnetic conductor unit and a dielectric resonator. Compared with the on-chip antenna without the artificial magnetic conductor unit and the dielectric resonator, the gain of the on-chip antenna obtained based on the method is improved within the range of 0-360 degrees on the H surface.
Fig. 8 is a simulation diagram comparing the radiation efficiency of the on-chip antenna with the artificial magnetic conductor unit and the dielectric resonator loaded/unloaded in the present invention, in which the abscissa represents the frequency, the ordinate represents the radiation efficiency of the antenna, the solid line represents the on-chip antenna obtained based on the present design method, and the dotted line represents the on-chip antenna with the artificial magnetic conductor unit and the dielectric resonator unloaded. Compared with an on-chip antenna without an artificial magnetic conductor unit and a dielectric resonator, the on-chip antenna obtained based on the method has the advantages that the radiation efficiency is obviously improved within the bandwidth range of 50GHz-70GHz, wherein the radiation efficiency is improved to 60.01% from 36.54% at 60 GHz.
Claims (10)
1. A design method of an on-chip antenna based on an artificial magnetic conductor and a dielectric resonator is characterized by comprising the following steps:
(1) calculating structural parameters of monopole antenna
1a) Determining the working frequency f of the antenna and the effective dielectric constant epsilon of the substrateeffCalculating the effective antenna length L of the monopole antennaeff；
1b) Determining the geometry of the monopole antenna;
1c) calculating the effective length LeffOriginal parameters of each component;
(2) determining the height h and dielectric constant epsilon of the substraterCalculating the structural parameters of the artificial magnetic conductor unit according to the bandwidth BW of the artificial magnetic conductor unit;
(3) determining the dielectric constant epsilon of the material of a dielectric resonatorlCalculating the structural parameters of the dielectric resonator according to the original shape;
(4) optimization of artificial magnetic conductor unit:
4a) taking the side length W of the metal sheet of the artificial magnetic conductor and the gap g between the adjacent metal sheets obtained by calculation as initial values of the artificial magnetic conductor unit;
4b) loading the artificial magnetic conductor unit on a metal layer at the bottom layer of the CMOS process;
4c) fine-tuning parameters of the artificial magnetic conductor unit by adopting an electromagnetic numerical simulation technology, and adjusting the side length W of the metal sheet of the artificial magnetic conductor and the gap g between adjacent metal sheets;
(5) loading an array of artificial magnetic conductors:
5a) loading an NxM personal artificial magnetic conductor array on a metal layer at the bottom layer of a CMOS (complementary metal oxide semiconductor) process, wherein M is the number of antennas in the effective length direction, N is the number of antennas perpendicular to the effective length direction, and N is less than M;
5b) taking the structural parameters of the monopole antenna as initial values, and loading the monopole antenna on a metal layer at the top layer of the CMOS process;
5c) optimizing the arrangement mode of the metal layers loaded on the bottom layer of the CMOS process, and obtaining the maximum gain value on the working frequency of the monopole antenna by increasing the number M in the effective length direction of the antenna and reducing the number N vertical to the effective length direction of the antenna;
(6) and (3) monopole antenna structure parameter optimization:
6a) adjusting the size of the monopole antenna radiation patch, and changing the geometric area of the radiation patch;
6b) obtaining antenna gain on the working frequency according with the requirement;
6c) adjusting the size of the antenna feed part to enable the antenna working frequency to meet the requirement;
(7) loading the dielectric resonator:
7a) determining the geometric shape of the dielectric resonator, and taking the structural parameters of the dielectric resonator obtained by calculation as initial values;
7b) adjusting the structural parameters of the dielectric resonator to enable the eigenfrequency of the dielectric resonator to reach the working frequency;
7c) loading a dielectric resonator above the monopole antenna radiation patch, judging whether the antenna working frequency and the gain meet the requirements, if so, executing the step 7e), otherwise, executing the step 7 d);
7d) adjusting effective length L of dielectric resonator and monopole antennaeffThe antenna working frequency and the gain meet the requirements;
7e) and obtaining the on-chip antenna structure loaded with the artificial magnetic conductor and the dielectric resonator.
2. The design method of the on-chip antenna based on the artificial magnetic conductor and the dielectric resonator as claimed in claim 1, wherein the effective antenna length of the monopole antenna in the step 1a) is LeffCalculated as follows:
where c is the propagation velocity of electromagnetic waves in free space, f is the antenna operating frequency, εeffIs the effective dielectric constant of the substrate.
3. The design method of the on-chip antenna based on the artificial magnetic conductor and the dielectric resonator as claimed in claim 1, wherein the monopole antenna radiating patch in the step 1c) is circular, and the effective length L is calculatedeffEach component is calculated as follows:
r＝4πlp
Leff＝2r+lp+lm
wherein r is the radius of the circular patch, d is the parasitic length l of the radiating patchmAnd length of strip at feed pointpThe ratio of.
4. The method as claimed in claim 1, wherein the parameters of the artificial magnetic conductor structure in step (2) are represented by the side length W of the metal sheet and the gap g between adjacent metal sheets, and are calculated as follows:
L＝μh
wherein C, L is the equivalent capacitance and inductance of the artificial magnetic conductor unit structure respectively0Mu is the dielectric constant in vacuum and mu is the permeability.
5. The design method of an on-chip antenna based on artificial magnetic conductor and dielectric resonator as claimed in claim 1, wherein in step (3), the original shape of the dielectric resonator is rectangular, and the structural parameters of the rectangular dielectric resonator are calculated according to the following formula:
0.4≤p≤1,0.2≤q≤1
s1＝-5.29q4+15.97q3-17.74q2+8.812q-3.198
s2＝0.2706q4-0.7232q3+0.7857q2-0.4558q-1.023
s3＝-8.03q4+23.06q3-24.53q2+11.75q-3.588
s4＝43.18q4-124.7q3+134.5q2-65.85q+15.37
wherein epsilonlIs the dielectric constant of the material of the rectangular dielectric resonator, p is the length-width ratio, q is the height-length ratio, a is the length, b is the width, h1Is high, s1、s2、s3And s4Each being a rectangular dielectric resonatorFour degrees of freedom define values.
6. The design method of the on-chip antenna based on the artificial magnetic conductor and the dielectric resonator as claimed in claim 1, wherein the side length W of the metal sheet of the artificial magnetic conductor in the step 4c) is 0.14mm, and the gap g between the adjacent metal sheets is 0.05 mm.
7. The method for designing the on-chip antenna based on the artificial magnetic conductor and the dielectric resonator as claimed in claim 1, wherein a value range of N in the step 5c) is 3-7, and a value range of M is 8-16.
8. The design method of the on-chip antenna based on the artificial magnetic conductor and the dielectric resonator as claimed in claim 1, wherein the radius r of the circular radiation patch of the monopole antenna in the step (6) is 0.1mm, and the parasitic length l of the radiation patch ismAnd length of strip at feed pointp0.15mm and 0.17mm respectively.
9. The method as claimed in claim 1, wherein the dielectric resonator in step 7a) has a rectangular structure with a length a, a width b and a height h10.46mm, 0.67mm and 0.36mm, respectively.
10. The design method of the on-chip antenna based on the artificial magnetic conductor and the dielectric resonator is characterized in that the distance between the dielectric resonator and the monopole antenna in the step 7d) is 0.185mm in the effective length.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112490689A (en) * | 2020-11-23 | 2021-03-12 | 重庆邮电大学 | C-band resonator antenna constructed by artificial magnetic conductor structure |
| CN113644413A (en) * | 2021-06-23 | 2021-11-12 | 深圳市信维通信股份有限公司 | Method for designing size of dielectric resonator in three-frequency dielectric resonant antenna |
| CN113644413B (en) * | 2021-06-23 | 2023-09-12 | 深圳市信维通信股份有限公司 | Method for designing size of dielectric resonator in three-frequency dielectric resonant antenna |
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| Publication number | Publication date |
|---|---|
| CN111191363B (en) | 2022-09-06 |
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