CN111183248A

CN111183248A - Bearing disc for growing thin film on substrate, growing device and growing method

Info

Publication number: CN111183248A
Application number: CN201980004724.4A
Authority: CN
Inventors: 张中英; 张宏铭; 罗云明
Original assignee: Xiamen Sanan Optoelectronics Technology Co Ltd
Current assignee: Xiamen Sanan Optoelectronics Technology Co Ltd
Priority date: 2019-05-20
Filing date: 2019-05-20
Publication date: 2020-05-19
Also published as: WO2020232602A1

Abstract

A carrier platter for growing a thin film on a substrate, comprising: a carrier body including opposing upper and lower surfaces, a hole passing through the lower surface from the upper surface; the side wall of the hole side is provided with a plurality of grooves, and the grooves are internally provided with table tops; a plurality of supporting blocks for supporting the substrate are supported on the inner side wall and can be independently detached from the carrier tray body; each support block comprises a first part bulge, the first part bulge extends from the side wall of the bearing disc body to the inside of the hole and comprises a second part bulge, the second part bulge is inserted into a groove of the side wall and forms support by a table surface in the groove, and the third part is used for connecting the first part bulge and the second part bulge. Through the design of a part of each supporting block for installing in the groove of the counter bore inside wall of the bearing disc, additional fixing pieces are not needed, the mounting and the dismounting are convenient, the service life of the bearing disc body is prolonged, and the production cost is reduced.

Description

Bearing disc for growing thin film on substrate, growing device and growing method

Technical Field

The bearing plate can be applied to a bearing plate for growing a film on the surface of a substrate, and can be applied to MOCVD equipment.

Background

The MOCVD technique uses organic compounds of group iii and group ii elements and hydrides of group V and group vi elements as crystal growth source materials, and performs vapor phase epitaxy on a substrate in a thermal decomposition reaction mode to obtain a desired thin film, and grows thin single crystal materials of various group iii-V main group and group ii-vi compound semiconductors and their multiple solid solutions, and is widely applied to the industry of compound semiconductor production equipment, such as blue or ultraviolet or red light or infrared LEDs or lasers.

When forming a desired thin film by the MOCVD technique, it is known that the surface reaction generated on the substrate surface by the reactive raw material gas is very complicated on the one hand, and it is very critical to control these parameters in the MOCVD technique to form the desired thin film. On the other hand, in order to ensure the growth quality of the thin film, the design of the bearing structure of the substrate is also very critical.

FIG. 1 shows an MOCVD growth apparatus, which has a growth chamber 100, a suspended base 101 is provided on the top of the chamber 100, and a plurality of carrier trays 103 for carrying growth substrates can be fixed on the base 101. The base 101 comprises a turntable 102 with a gear at the edge, the turntable 102 having a slot-like or hole-like structure in the centre for mounting a support post 104, the support post 104 being used to suspend the top of the base within the cavity, and the support post 104 being arranged to rotate the turntable 102. As shown in fig. 2, the edge of the rotating disc 102 has a gear, which is matched with the gear of the carrier disc 103 to make the carrier disc 103 rotatable. The top of the chamber also has a heating device 105, and the heating device 105 is in an electric heating mode.

In the chamber 100, a reactive gas flows through a space below the susceptor 101, the reactive gas flows to a growth surface of a growth substrate to obtain an epitaxial growth film, and the reactive gas is supplied and discharged through a gas inflow pipe 106 and a gas outflow pipe 107.

The carrier plate 103 is constructed as shown in fig. 3-4, the carrier plate 103 includes a counter bore penetrating both sides, a growth substrate 111 is mounted at the bottom of the counter bore, and a heat spreader 110 is mounted at the upper part. The heat spreader 110 has a surface opposite to the growth surface of the growth substrate and maintains a slight distance, so that the heat spreader can uniformly spread heat to the surface of the growth substrate. The side wall in the counter bore has a step 1031, the step 1031 is used to support the edge of the heat exchanger 110, and the heat exchanger 110 has a block shape of a "convex" type, and the heat exchanger 110 can be freely taken out from the upper surface side of the carrier tray. The bottom side of the carrier plate 103 is integrally provided with a plurality of support blocks 109, typically at least three or four or five, extending towards the centre of the bottom of the counterbore, which support blocks bear against the edges of the growth surface of the growth substrate. Because the thermal conduction between the support block and the growth substrate affects the heating uniformity of the growth substrate, the support block should be designed to have a size as small as possible, and the contact area with the growth surface should be as small as possible.

The carrier plate, the heat transmitter and the supporting block are generally made of graphite, graphite with silicon carbide coated on the surface or silicon carbide, wherein the small-sized supporting block is used for supporting the growth substrate for a long time and is subjected to multiple collisions in the taking and placing process or the growth process, the supporting block is easy to break, particularly, the silicon carbide is easy to be brittle, the carrier plate 103 needs to be replaced frequently, the service cycle is short, and the production cost is high.

The utility model provides an adopt the screw to fix the supporting shoe in the bottom of bearing the dish among the prior art to change, however the screw belongs to extra mounting, and it is inconvenient to change, and need select and bear dish, heat transmitter and supporting shoe and be same material, equally vulnerable. The prior art also proposes the use of adhesives, however, the growth conditions of MOCVD are at least over 600 degrees, and it is difficult to find adhesives with stable performance and good adhesion.

Disclosure of Invention

In order to solve the above technical problem, the present invention provides a carrier tray for growing a thin film on a substrate, comprising:

a carrier body including opposing upper and lower surfaces, a hole passing through the lower surface from the upper surface;

the side wall of the hole side is provided with a plurality of grooves, and the grooves are internally provided with table tops;

a plurality of supporting blocks for supporting the substrate are supported on the inner side wall and can be independently detached from the carrier tray body; each support block comprises a first part bulge, the first part bulge extends from the side wall of the bearing disc body to the inside of the hole and comprises a second part bulge, the second part bulge is inserted into a groove of the side wall and forms support by a table surface in the groove, and the third part is used for connecting the first part bulge and the second part bulge.

Preferably, the mesa in the recess extends along the inner side wall of the counter bore in the circumferential direction or along the thickness direction of the side wall.

Preferably, the groove extends to the lower surface side of the carrier tray so that the third portion connecting portion is fitted into the groove.

Preferably, the second part of the supporting block is provided with a bulge and a third part which fill the space of the groove.

Preferably, the groove is a T-shaped groove or a right-angle groove, and the first part of the protrusion and the second part of the protrusion of the supporting block extend perpendicularly to each other.

Preferably, the first portion protrusions of the plurality of support blocks have an arc-shaped edge.

Preferably, the arc length of the arc-shaped edge is smaller than 1/4 of the circumference perimeter of the inner side wall of the counter bore.

Preferably, the first portion of each support block is mounted in the recess of the side wall at spaced intervals.

Preferably, the hole is a counter bore, the side wall above the groove is also provided with a horizontal step, and the horizontal step is closer to the upper surface side of the bearing plate relative to the groove.

The invention also provides a bearing disc for growing the film on the substrate, which comprises:

the bearing disc comprises a bearing disc body, a bearing disc body and a bearing disc body, wherein the bearing disc body comprises an upper surface side and a lower surface side which are opposite, a counter bore penetrates through the lower surface side from the upper surface side, and a plurality of Z-shaped supporting blocks are supported on the inner side wall and can be independently detached from the bearing disc body; each support block comprises a first part of bulges, which extend from the side wall of the bearing disc body to the lateral direction of the counter bore, and a second part of bulges, which are supported on steps in the counter bore.

Preferably, the second part of the protrusion of the supporting block is supported on the step, and a cover plate is provided above the substrate when the substrate is mounted, and the second part of the protrusion of the supporting block can be clamped between the step and the cover plate to form a support.

Preferably, the second portions of the plurality of support blocks are supported on the step to form a closed loop.

Preferably, the support block further comprises a third portion connecting the first portion and the second portion, the third portions of the plurality of support blocks forming a closed loop on the side wall conforming to the side wall.

Preferably, the number of the supporting blocks is at least 4.

Preferably, the material of the carrier disc body is the same as that of the supporting block.

Preferably, the first partial protrusion of the supporting block has a block shape, and a surface of the first partial protrusion opposite to the growth surface of the supporting substrate is arranged to be inclined with respect to the lower surface side of the carrier tray.

Preferably, the face of the first part of the support block projecting opposite the growth face of the support substrate has an arcuate or pointed conical or tapered land.

Preferably, the material of the bearing disc body and the material of the supporting block are graphite, silicon carbide or graphite with the surface coated with silicon carbide.

Preferably, a substrate for growing a thin film may be placed from the upper surface side of the carrier plate, and an edge of a surface of the substrate exposed from the lower surface side of the carrier plate is supported by the first partial protrusions of the plurality of support blocks.

Preferably, the inner side wall of the counter bore comprises a step, a substrate and a cover plate for growing the thin film can be sequentially placed from the upper surface side of the bearing disc, and the cover plate can be fixed on the step.

Preferably, the cover plate is a heat transfer block, and the cover plate can be fixed on the step and is spaced from the substrate by a certain distance.

The invention also provides a device for growing the thin film on the substrate, which comprises a growth cavity, wherein the growth cavity comprises the bearing disc, the bearing disc is detachably arranged on the base, the base is hung at the top in the growth cavity, the counter bore of the bearing disc is internally provided with the substrate and the cover plate, and the substrate is provided with one side which is exposed at the lower surface side of the bearing disc.

Preferably, the substrate is sapphire, germanium, gallium arsenide, silicon or gallium nitride or the surface of the substrate is provided with an additional film layer.

Preferably, a reaction gas circulation cavity is arranged below the base.

Preferably, the device is an MOCVD device.

The invention also provides a method for growing the film on the substrate, which comprises the step of growing the film by using the device for growing the film on the substrate.

Has the advantages that:

(1) because traditional supporting shoe is an organic whole with bearing the dish and is connected, the supporting shoe that the supporting shoe is used for the supporting substrate is damaged easily through colliding with, striking repeatedly, leads to bearing the change cycle of dish short, and use cost is high. The bearing disc provided by the invention can detachably support a plurality of supporting blocks, and is convenient to replace, so that the service life of the bearing disc body is prolonged, and the production cost is reduced.

(2) A part of each supporting block is designed to be arranged on a table top in a groove of the inner side wall of the counter bore of the bearing plate or hung on a step of the inner side wall of the counter bore, so that additional fixing parts are not needed, and the mounting and the dismounting are convenient.

(3) In order to reduce the influence of the supporting block on the heating uniformity of the substrate and reduce the contact area of the supporting block and the substrate, for example, the surface of the supporting block opposite to the substrate growth surface is relatively inclined or the first part of the bulge of the supporting block extends relatively inclined to the substrate growth surface, so as to reduce the influence of the supporting block on the heating uniformity of the substrate growth surface, or at least one bulge can be designed, and the surface shape of the bulge is an arc shape or a conical table or a pointed cone or a strip shape.

Drawings

The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. Furthermore, the drawing figures are for a descriptive summary and are not drawn to scale.

Fig. 1 is a schematic structural diagram of an MOCVD growth apparatus mentioned in the background art.

Fig. 2 is a schematic structural view as viewed from the lower surface side of the susceptor in the growth chamber of the MOCVD growth apparatus in fig. 1.

Fig. 3 is a schematic structural view of a susceptor used in the MOCVD growth apparatus of fig. 1.

Fig. 4 is a schematic structural view of the carrier tray shown in fig. 3 with a growth substrate and a cover plate mounted therein.

Fig. 5 is a schematic cross-sectional view of fig. 4.

Fig. 6 is a schematic structural view of a carrier tray according to the first embodiment.

Fig. 7 is a schematic cross-sectional view of the carrier tray shown in fig. 6, taken along the dashed lines.

Fig. 8 is a schematic cross-sectional view of a carrier tray according to the first embodiment.

FIG. 9 is a schematic structural diagram of a support block according to the first embodiment.

Fig. 10 is a schematic cross-sectional view of a carrier tray according to the first embodiment.

Fig. 11 is a schematic cross-sectional view of a carrier tray according to a second embodiment.

FIG. 12 is a schematic structural view of a support block according to the second embodiment.

Fig. 13 is a schematic structural view of a carrier tray according to a second embodiment.

FIG. 14 is a schematic cross-sectional view of a carrier tray according to the second embodiment.

Fig. 15 is a schematic cross-sectional view of a carrier tray body according to a third embodiment.

FIG. 16 is a schematic sectional view of a carrier tray according to the third embodiment.

Fig. 17-18 are schematic structural views of the support block of the third embodiment.

FIG. 19 is a schematic sectional view of a carrier tray according to the third embodiment.

FIG. 20 is a schematic sectional view of a carrier tray according to the fourth embodiment.

FIG. 21 is a schematic sectional view of a carrier tray according to the fifth embodiment.

FIG. 22 is a schematic structural view of a support block of the fifth embodiment.

Fig. 23-24 are cross-sectional views of the support block of the sixth embodiment.

FIG. 25 is a schematic sectional view of a carrier tray according to the seventh embodiment.

FIG. 26 is a schematic structural view of a support block of the seventh embodiment.

Detailed Description

The carrier platter of the present invention will be described in detail with reference to the schematic drawings before further describing the present invention, it should be understood that the present invention is not limited to the particular embodiments described below, as modifications may be made to the particular embodiments. It is also to be understood that the embodiments are presented by way of illustration, not limitation, since the scope of the invention is defined by the appended claims. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art.

In the following description, similar or identical components will be denoted by the same reference numerals.

Example one

The present embodiment provides a carrier plate for growing a thin film on a substrate, which is better suitable for growing a thin film under a high temperature condition. The high temperature condition is usually a growth condition of more than 600 ℃, and is particularly, but not limited to be used in an MOCVD growth device for growing a gallium nitride-based thin film, an aluminum gallium indium phosphide-based thin film, an aluminum gallium arsenic-based thin film and a gallium arsenide-based thin film. The grown thin film may be used in, but is not limited to, devices of the type such as LED light emitting devices or laser devices or solar cells.

The substrate for growing the film is preferably a sapphire or germanium-based or gallium arsenide-based or silicon-based or gallium nitride-based substrate or an additional film layer is already arranged on the surface of the substrate.

In particular to a bearing plate for growing a thin film on a substrate as shown in figure 6. The bearing disc comprises a bearing disc body 200 and a plurality of supporting blocks 202 which can be detached independently, wherein the bearing disc body 200 comprises an upper surface side and a lower surface side, and a counter bore penetrates from the upper surface side to the lower surface side. Fig. 6 is a schematic diagram of the structure of the carrier 200 viewed from the top, with the support blocks 202 secured to the sidewalls in the counterbores.

Fig. 7 provides a schematic longitudinal sectional view from the upper surface side to the lower surface of the carrier tray body 200, in which a base plate 204 and a cover plate 203 are sequentially placed from the upper surface side in a counterbore of the carrier tray, the base plate 204 having two sides, one side being opposite to the cover plate, and the other side of the base plate 204 being exposed from the lower surface side of the carrier tray for film growth. The substrate 204 described in this embodiment may be a sapphire substrate.

A plurality of individually detachable support blocks 202 are in contact with the edge of the lower surface side of the substrate for support.

The side wall in the counter bore is provided with a step 201, and the step 201 is used for supporting and limiting a cover plate 203. The cover 203 may be embodied as a cylinder, the bottom edge of which is supported on the step 201. Alternatively, as shown in fig. 7, the cover plate is generally formed as two columns of different sizes integrally, and the cover plate forms a step on the outer sidewall. When the cover plate is placed in the counterbore, the step on the outer sidewall of the cover plate is supported on the step 201 on the sidewall within the counterbore. The step is positioned closer to the upper surface side of the bearing plate relative to the groove.

In the MOCVD growth device, the cover plate can be a heat transmitter and uniformly transmits heat generated by an external heating device to the substrate, so that the growth surface of the substrate in the process of growing the thin film is uniformly heated, and a certain gap can be formed between the fixed cover plate and the substrate.

Fig. 8 is a longitudinal sectional view along the upper surface side to the lower surface of the carrier tray from the dotted line position of fig. 6. The carrier tray body 200 includes a plurality of grooves 204 on the inner sidewall below the step for individually detachably securing a plurality of support blocks 202 to the sidewall. The groove has at least one table surface therein for allowing a portion of the support block to be inserted into and supported by the groove. Specifically, the groove 204 may be T-shaped or right-angled.

As shown in fig. 8, the grooves 204 are right-angled. The right-angled groove 204 comprises a first portion 2041 extending to a certain depth in the thickness direction of the side wall and a second portion 2042 extending from the first portion 2041 to the lower surface side of the carrier tray in the vertical direction of the side wall, the first portion 2041 of the groove 204 penetrating deeper into the side wall in the thickness direction to a greater depth than the depth 2042 of the second portion in the horizontal direction, whereby the first portion 2041 forms a mesa in the groove which can support the support block.

Fig. 9 shows a schematic view of the structure of the supporting block 202 and the structure shown in fig. 10 is obtained when the supporting block 202 is mounted in the groove 204 shown in fig. 8. The support block 202 is shown in this embodiment as having a zigzag shape with three portions, a first portion 2021, a second portion 2022 and a third portion 2023, which are integrally formed and non-detachable. The first portion 2021 is used to support the growth surface of the substrate and is a protrusion extending from the sidewall of the carrier tray body toward the inside of the hole, and optionally, the first portion 2021 of the supporting block 202 is disposed lower than the lower surface side of the carrier tray 202 or at the same level as the lower surface side of the carrier tray 202. Specifically, the first portion 2021 extends a length from the third portion 2023 toward the centerline of the counterbore. Preferably, the first portion 2021 and the second portion 2022 extend in a direction parallel to the upper surface side and the lower surface side of the tray body.

The second portion 2022 is mounted in the first portion 2041 of the groove 204 and is supported by the land in the first portion 2041 of the groove as a protrusion.

The third portion 2023 is used to connect the first portion 2021 and the second portion 2022, and the third portion 2023 is embedded in the second portion 2042 in which the groove 204 extends in the vertical direction.

The carrier plate body 200, the support block 202 and the cover plate 204 may be made of the same material, and the material may be graphite or graphite with silicon carbide or silicon carbide coated on the surface. More preferably, the carrier plate body 200, the supporting block 202 and the cover plate 204 are made of silicon carbide material.

According to the design of the invention, when the first part of the bulge of any one supporting block in the bearing disc is damaged, the supporting block can be conveniently taken down from the side wall in the counter bore of the bearing disc and replaced by a new supporting block, so that the service life of the bearing disc body is prolonged, and the use cost of the bearing disc is reduced.

Example two

On the basis of the first embodiment, the embodiment provides an alternative scheme that the shapes of the groove on the inner side wall of the bearing disc body and the supporting block are changed. Fig. 11 provides a schematic longitudinal cross-sectional view from the upper surface side to the lower surface side of the carrier tray, the carrier tray body includes a plurality of grooves 204 on the inner sidewall below the step, the grooves 204 are T-shaped grooves, and include a first portion 2041 extending along the sidewall surface in the horizontal direction in the circumferential direction and a second portion 2042 extending from the first portion 2041 in the vertical direction to the lower surface side of the carrier tray, the first portion 2041 of the grooves 204 extends along the sidewall in the circumferential direction and has a dimension D1, and the second portion 2042 extends along the sidewall in the circumferential direction and has a dimension D2. Alternatively, the depth of the first portion 2041 of the groove in the horizontal direction coincides with the depth of the second portion 2042 in the horizontal direction. In this embodiment, taking the example that the horizontal cross section of the counterbore is circular, D1 and D2 are arc lengths, and the arc length is the average arc length. In this embodiment D1 is larger than D2 and thus has a land in the T-shaped groove first portion 2041 for supporting the support block. D1 is less than 1/4 of the circumference of the inner side wall of the counter bore. More preferably, the arc length of the arc-shaped edge is 1/5-1/10 or 1/10-1/20 of the circumferential perimeter of the side wall.

The carrier tray body includes a plurality of support blocks that are individually removable and installable. The shape of the supporting block is shown in fig. 12, and the supporting block 202 in this embodiment has a first portion 2021, a second portion 2022, and a third portion 2023, which are integrally formed and are not detachable. The first portion 2021 of the support block 202 is attached to the bottom of the third portion 2023 as a protrusion extending inwardly of the hole from the third portion 2023 for supporting an edge portion of the growth surface of the substrate. The first portion 2021 of the supporting block may be disposed lower than the lower surface side of the carrier tray 202 or at the same level as the lower surface side of the carrier tray 202.

The second portion 2022 is a protrusion that fits within the first portion 2041 of the recess shown in fig. 11 and is supported against the mesa. In the embodiment, for example, the horizontal cross section of the counterbore is circular, and the second portion has an arc-shaped edge with an arc length equal to that of the first portion of the groove.

The third portion 2023 extends along a direction perpendicular to the extension direction of the second portion 2022, i.e. the second portion 2022 and the third portion 2023 are perpendicular to each other. The second section 2022 and the third section 2023 have horizontal width dimensions D3 and D4, preferably D3 and D4 equal to the dimensions D1 and D2 of the first section 2041 and the second section 2042, respectively, of the groove 204 to enable the first and second sections of the support block to fit snugly into the groove to enable the second section 2022 and the third section 2023 of the support block to substantially fill the interior of the groove. Taking the example of a circular horizontal cross-section of the counterbore, the width dimensions D3 and D4 are the average arc length.

Fig. 13 provides a top view of the substrate 204 placed on the carrier platter, and as can be seen, the first portions 2021 of the plurality of support blocks extend from the third portions 2023 toward the centerline of the counterbore and make multiple contacts with the lower surface side (growth surface) of the substrate 204 to support the substrate 204.

Fig. 14 is a longitudinal sectional view of the carrier tray illustrated in fig. 13 after the base plate 204 and the cover plate 203 are placed thereon. Wherein the substrate 204 is supported by the first portion 2021 of the supporting block 202 and the cover plate 203 is supported by the step 201 of the inner sidewall. The substrate 204 and the cover plate are not in contact with each other and may be spaced apart by a distance of not more than 1 cm.

EXAMPLE III

Unlike the first and second embodiments, this embodiment provides another design of removable support block. As shown in fig. 15, a carrier tray 200 for growing a thin film on a substrate includes a carrier tray body 200 having an upper surface side and a lower surface side, and a counter bore penetrating through the lower surface side from the upper surface side. The susceptor forms a step 201 on the side wall within the counterbore, the mesa of the step 201 being substantially parallel to the upper surface side and the lower surface side.

The carrier plate 200 includes a plurality of individually detachable support blocks 202 as shown in fig. 16, and the plurality of support blocks 202 have a zigzag structure. As shown in fig. 17, the plurality of support blocks 202 include a portion suspended and supported by the step 201, another portion extending along the side wall of the body of the carrier to the lower surface side in the counterbore, and a portion extending from the lower edge of the side wall in the counterbore toward the centerline of the counterbore, the portion being for supporting the growth surface of the substrate. The number of support blocks is in particular at least two, preferably at least four, preferably the support blocks are of uniform shape and size.

Specifically, the supporting block has a first portion 2021, a second portion 2022, and a third portion 2023, which are integrally formed and are not detachable. The first portion 2021 is a protrusion for supporting a growth surface of the substrate, when the substrate is mounted, the first portion 2021 contacts the growth surface of the substrate, and the plurality of supporting blocks 202 form a plurality of contacts with the growth surface of the substrate through the plurality of first portions 2021. When the support block is installed in the counterbore, the first portion 2021 extends from the inside wall side of the load-bearing disk to the inside of the counterbore, preferably to a length horizontally toward the centerline of the counterbore.

The support block 202 has a second portion 2022, and the second portion 2022 is a protrusion having a horizontal width and a longitudinal thickness. The support block 202 is supported by the one side of the second portion 2022 being in contact with the horizontal surface of the step 201 on the inner side wall of the carrier tray.

The support block 202 also has a third portion 2023, the third portion 2023 connecting the first portion 2021 and the second portion 2022. The third portion 2023 abuts the side wall below the step in the counterbore when the support block 202 is installed in the counterbore. The second portion 2022 has a larger horizontal width than the third portion 2023, so as to ensure that the second portion has a surface to be attached to the step of the carrier tray to form a support.

When a plurality of support blocks 202 of the same size are combined together, at least the second portion 2022 or the third portion 2023 may form a closed loop structure. In this embodiment, as shown in the schematic structure of fig. 18, when a plurality of support blocks 202 with the same size are combined together, the second portion 2022 and the third portion 2023 form a closed ring structure. A plurality of equally sized support blocks 202 are mounted together on a step in the counterbore.

Fig. 19 shows a cross-sectional view taken along the dashed line in fig. 17, with the support block 202 suspended from the step 201 by the projection of the second portion 2022, the third portion 2023 of the support block abutting the side wall below the counter bore step, and the first portion 2021 of the support block located on the lower surface side within the counter bore in the carrier disc and extending from the edge side wall on the lower surface side of the carrier disc to the side of the center line.

As also shown in fig. 19, when the substrate 204 and the cover plate 203 are mounted in the counterbore in the carrier disc, the substrate 204 is placed at the bottom of the counterbore, and the side of the substrate 204 exposed from the lower surface side of the carrier disc is a face for growing a thin film, the edge of which is supported by the first portions 2021 of the plurality of support blocks.

The cover plate 203 is a cylinder with a uniform cross section or a cylinder with a large top and a small bottom, and in the growth device of MOCVD, the cover plate generally used for sapphire surface growth is a cylinder with a large top and a small bottom, and the horizontal cross section of the cylinder is a step structure with a large top and a small bottom on the outer side wall, and the step is formed by surrounding the side wall. When the cover plate 203 is mounted, the step of the outer side wall of the cover plate 203 is supported on the second portion 2022 of the support block. Therefore, the step 201 in the counter bore can form a suspension support for the second portion 2022 of the support block, and the step of the outer side wall of the cover plate and the step 201 in the counter bore can form a clamp for the second portion 2022 of the support block, so as to fix the support block 202.

According to the design of the invention, when the first part of the bulge of any one supporting block in the bearing disc is damaged, the supporting block can be conveniently taken down from the step in the counter bore of the bearing disc and replaced by a new supporting block, so that the service life of the bearing disc body is prolonged, and the use cost of the bearing disc is reduced.

Example four

As an alternative to any of the first to third embodiments, in the embodiment, in comparison with a modification of the carrier tray shown in fig. 8, a structural diagram of a carrier tray shown in fig. 20 on which the substrate and the cover plate are placed is shown, in which the first portion 2021 of the supporting block 202 is designed to extend obliquely relative to the growth surface of the substrate, and the edge of the substrate 204 is in line contact with the oblique surface of the first portion 2021 of the supporting block 202. Thereby reducing the contact area between the substrate 204 and the backing block 202 and reducing the thermal uniformity effect of the backing block on the growth surface of the substrate 204. Similarly, the first portion 2021 of the backing block 202 of the carrier platter shown in fig. 14 and 19 may be designed to be inclined with respect to the substrate growth surface.

EXAMPLE five

As a modification of the fourth embodiment, in the carrier tray 200 shown in fig. 21, the first portion 2021 has a protrusion 2024 on a surface opposite to the growth surface of the substrate 204, and the protrusion 2024 has an arc surface. The protrusion 2024 contacts the growth surface of the substrate 204 through the top of the arc-shaped surface, thereby reducing the contact area between the first portion 2021 and the growth surface of the substrate. The supporting block 202 of this embodiment is structured as shown in fig. 22, and the number of the protrusions 2024 is one or more.

EXAMPLE six

As a modification of the support block embodying five, the protrusion 2024 may be strip-shaped or block-shaped or tapered as shown in the support block structure of fig. 23 to 24.

EXAMPLE seven

The first and second portions of the support block implementing one to three may extend parallel to each other. When mounted, the first portion of the backing block is relatively parallel to the growth surface of the substrate. As an alternative to any one of the first to third embodiments, a specific modified structure of this embodiment is shown in fig. 25, where the extending direction of the first portion 2021 of the supporting block 202 is parallel to the lower surface side of the carrier tray, but the surface of the first portion 2021 opposite to the growth surface of the substrate 204 is inclined, so that the supporting block 202 is in line contact with the edge of the growth surface of the substrate. Thereby reducing the contact area between the substrate 204 and the backing block 202 and reducing the thermal uniformity effect of the backing block on the growth surface of the substrate 204. The shape of the support block is shown in fig. 27.

Example eight

The embodiment provides an MOCVD device, which comprises a growth cavity, wherein the growth cavity comprises the bearing disc in any one embodiment, the bearing disc is installed on a base, the base is hung at the top in the growth cavity, a base plate and a cover plate are installed in a counter bore of the bearing disc, and the base plate is provided with one side which is exposed from the lower surface side of the bearing disc and used for epitaxially growing a thin film. An electric heater is arranged above the base and provides a heating source for the substrate. A reactive gas flowing space is arranged below the base, and a gas inflow channel and a gas outflow channel are arranged in the cavity. The substrate of this embodiment is a sapphire substrate, and the sapphire substrate is fixed in the carrier plate to obtain the growth film through the lower surface side of carrier plate exposed and the contact of the reactive gas that circulates with the base lower surface. The cover plate, the bearing plate body and the supporting block are made of silicon carbide, the silicon carbide has a heat transfer function, heat of the heater is conducted to the sapphire substrate, and uniform heating of the sapphire substrate is achieved. As an embodiment, a sapphire substrate may be used to grow a layer of light emitting material of aluminum gallium indium nitride, aluminum gallium indium phosphide, or aluminum gallium arsenic.

The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and improvements can be made without departing from the principle of the present invention, and these modifications and improvements should also be considered as the protection scope of the present invention.

Claims

1. A carrier platter for growing a thin film on a substrate, comprising:

a plurality of grooves are formed in the side wall in the hole, and table tops are arranged in the grooves;

a plurality of supporting blocks for supporting the substrate are supported on the inner side wall and can be independently detached from the carrier tray body; each support block comprises a first part bulge, the first part bulge extends from the side wall in the bearing disc body hole to the inside of the hole and comprises a second part bulge, the second part bulge is inserted into a groove in the side wall and forms support by a table surface in the groove, and the third part is used for connecting the first part bulge and the second part bulge.

2. The carrier tray according to claim 1, wherein: the table surface in the groove extends along the circumferential direction of the inner side wall of the counter bore or along the thickness direction of the side wall.

3. The carrier tray according to claim 1, wherein: the groove extends to the lower surface side of the carrier tray so that the third portion connecting portion is embedded in the groove.

4. The carrier tray according to claim 3, wherein: the second part of the supporting block is provided with a bulge and the third part is filled with the space of the groove.

5. The carrier platter of claim 1, wherein: the groove is a T-shaped groove or a right-angle groove, and the first part of bulges and the second part of bulges of the supporting block extend perpendicularly to each other.

6. The carrier tray according to claim 1, wherein: the first portion of the plurality of support blocks is raised to have an arcuate edge.

7. The carrier platter for thin films grown on a substrate as claimed in claim 1, wherein: the arc length of the arc-shaped edge is smaller than 1/4 of the circumference perimeter of the inner side wall of the counter bore.

8. The carrier tray according to claim 1, wherein: the first part of the bulge of each supporting block is arranged in the groove of the side wall at intervals.

9. The carrier platter of claim 1, wherein: the hole is a counter bore, a horizontal step is further arranged on the side wall above the groove, and the position of the horizontal step is closer to the upper surface side of the bearing plate relative to the groove.

10. A carrier tray for growing thin films on a substrate, comprising:

11. The carrier tray of claim 10, wherein: the second part of the bulge of the supporting block is supported on the step, when the substrate is installed, a cover plate is arranged above the substrate, and the second part of the bulge of the supporting block can be clamped between the step and the cover plate to form support.

12. A carrier tray for growing thin films on substrates as claimed in claim 10 or 11, wherein: the second portions of the plurality of support blocks are supported on the step to form a closed loop.

13. The carrier tray of claim 10, wherein: the support blocks further comprise a third portion connecting the first portion and the second portion, the third portions of the plurality of support blocks forming a closed loop on the sidewall that conforms to the sidewall.

14. A carrier tray for growing thin films on substrates as claimed in claim 1 or 10, wherein: the number of the supporting blocks is at least 4.

15. A carrier tray for growing thin films on substrates as claimed in claim 1 or 10, wherein: the material of the bearing disc body is the same as that of the supporting block.

16. A carrier tray for growing thin films on substrates as claimed in claim 1 or 10, wherein: the first part of the bulge of the supporting block is in a block shape, and the surface of the first part of the bulge, which is opposite to the growth surface of the supporting substrate, is relatively inclined.

17. The carrier platter for growing thin films on a substrate as claimed in claim 16, wherein the first portion of the protrusions of the supporting block has an arc shape or a sharp cone shape or a cone shape on the surface opposite to the growth surface of the supporting substrate.

18. A carrier tray for growing thin films on substrates as claimed in claim 1 or 10, wherein: the material of the bearing disc body and the material of the supporting block are graphite, silicon carbide or graphite with the surface coated with silicon carbide.

19. A carrier tray for growing thin films on substrates as claimed in claim 1 or 10, wherein: the substrate for growing the thin film can be placed on the upper surface side of the bearing disc, and the edge of one surface of the substrate exposed from the lower surface side of the bearing disc is supported by the first part bulges of the plurality of supporting blocks.

20. A carrier tray for growing thin films on substrates as claimed in claim 1 or 10, wherein: the inner side wall of the counter bore comprises a step, a substrate and a cover plate for growing the thin film can be sequentially placed from the upper surface side of the bearing disc, and the cover plate can be fixed on the step.

21. The carrier platter of claim 20, wherein: the cover plate is a heat transfer block and can be fixed on the step and is spaced from the substrate by a certain distance.

22. An apparatus for growing a thin film on a substrate, comprising a growth chamber, the growth chamber comprising a carrier tray according to any one of claims 1 to 21, the carrier tray being detachably mounted on a base, the base being suspended on top in the growth chamber, the carrier tray having a counter bore in which a substrate and a cover plate are mounted, the substrate having one side exposed at a lower surface side of the carrier tray.

23. An apparatus for growing a thin film on a substrate as claimed in claim 22, wherein: a reaction gas circulation cavity is arranged below the base.

24. An apparatus for growing a thin film on a substrate as claimed in claim 22, wherein: the substrate is sapphire, germanium, gallium arsenide, silicon or gallium nitride or the surface of one of the substrates is provided with an additional film layer.

25. An apparatus for growing a thin film on a substrate as claimed in claim 22, wherein: the device is an MOCVD device.

26. A method for growing a thin film on a substrate comprising growing a thin film using the apparatus of any of claims 22 to 25.