CN111181143B - Transient pulse voltage suppressor - Google Patents
Transient pulse voltage suppressor Download PDFInfo
- Publication number
- CN111181143B CN111181143B CN202010098901.4A CN202010098901A CN111181143B CN 111181143 B CN111181143 B CN 111181143B CN 202010098901 A CN202010098901 A CN 202010098901A CN 111181143 B CN111181143 B CN 111181143B
- Authority
- CN
- China
- Prior art keywords
- oxide
- voltage
- trigger
- sintering
- nonlinear
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000001052 transient effect Effects 0.000 title claims abstract description 38
- 239000004065 semiconductor Substances 0.000 claims abstract description 42
- 230000005684 electric field Effects 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 21
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 20
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims abstract description 14
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims abstract description 14
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 14
- 239000011787 zinc oxide Substances 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052810 boron oxide Inorganic materials 0.000 claims abstract description 8
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims abstract description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 8
- ZXSQEZNORDWBGZ-UHFFFAOYSA-N 1,3-dihydropyrrolo[2,3-b]pyridin-2-one Chemical compound C1=CN=C2NC(=O)CC2=C1 ZXSQEZNORDWBGZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000005751 Copper oxide Substances 0.000 claims abstract description 7
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims abstract description 7
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 claims abstract description 7
- 229910000410 antimony oxide Inorganic materials 0.000 claims abstract description 7
- 229910000416 bismuth oxide Inorganic materials 0.000 claims abstract description 7
- 229910000423 chromium oxide Inorganic materials 0.000 claims abstract description 7
- 229910000428 cobalt oxide Inorganic materials 0.000 claims abstract description 7
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910000431 copper oxide Inorganic materials 0.000 claims abstract description 7
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims abstract description 7
- 230000000694 effects Effects 0.000 claims abstract description 7
- 229910000480 nickel oxide Inorganic materials 0.000 claims abstract description 7
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims abstract description 7
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910001958 silver carbonate Inorganic materials 0.000 claims abstract description 7
- LKZMBDSASOBTPN-UHFFFAOYSA-L silver carbonate Substances [Ag].[O-]C([O-])=O LKZMBDSASOBTPN-UHFFFAOYSA-L 0.000 claims abstract description 7
- 229910001961 silver nitrate Inorganic materials 0.000 claims abstract description 7
- 238000005245 sintering Methods 0.000 claims description 31
- 239000003990 capacitor Substances 0.000 claims description 18
- 238000009413 insulation Methods 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 238000007599 discharging Methods 0.000 claims description 9
- 239000008187 granular material Substances 0.000 claims description 9
- 239000011819 refractory material Substances 0.000 claims description 9
- 239000003292 glue Substances 0.000 claims description 8
- 238000000498 ball milling Methods 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000005469 granulation Methods 0.000 claims description 6
- 230000003179 granulation Effects 0.000 claims description 6
- 239000007921 spray Substances 0.000 claims description 6
- 230000001960 triggered effect Effects 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 5
- 239000002002 slurry Substances 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 230000001680 brushing effect Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 3
- CJQSUEBYPDGXEY-UHFFFAOYSA-N bismuth;oxosilver Chemical compound [Bi].[Ag]=O CJQSUEBYPDGXEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 238000007493 shaping process Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 229920000271 Kevlar® Polymers 0.000 claims description 2
- 239000004761 kevlar Substances 0.000 claims description 2
- 230000006378 damage Effects 0.000 abstract description 9
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 8
- 230000001419 dependent effect Effects 0.000 description 7
- 238000004891 communication Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- GHUYXZWVJVJALV-UHFFFAOYSA-N [Si][Ti][Pb] Chemical compound [Si][Ti][Pb] GHUYXZWVJVJALV-UHFFFAOYSA-N 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- ZGUQQOOKFJPJRS-UHFFFAOYSA-N lead silicon Chemical compound [Si].[Pb] ZGUQQOOKFJPJRS-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/041—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage using a short-circuiting device
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/02—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistors with envelope or housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
- H01C7/112—ZnO type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
- H01T4/00—Overvoltage arresters using spark gaps
- H01T4/08—Overvoltage arresters using spark gaps structurally associated with protected apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
- H01T4/00—Overvoltage arresters using spark gaps
- H01T4/10—Overvoltage arresters using spark gaps having a single gap or a plurality of gaps in parallel
- H01T4/12—Overvoltage arresters using spark gaps having a single gap or a plurality of gaps in parallel hermetically sealed
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/06—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage using spark-gap arresters
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3241—Chromium oxides, chromates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3275—Cobalt oxides, cobaltates or cobaltites or oxide forming salts thereof, e.g. bismuth cobaltate, zinc cobaltite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3279—Nickel oxides, nickalates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3281—Copper oxides, cuprates or oxide-forming salts thereof, e.g. CuO or Cu2O
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3289—Noble metal oxides
- C04B2235/3291—Silver oxides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3293—Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3294—Antimony oxides, antimonates, antimonites or oxide forming salts thereof, indium antimonate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3409—Boron oxide, borates, boric acids, or oxide forming salts thereof, e.g. borax
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3418—Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Emergency Protection Circuit Devices (AREA)
- Thermistors And Varistors (AREA)
Abstract
The invention provides a transient pulse voltage suppressor. Comprising the following steps: the nonlinear high-voltage triggering current semiconductor and the electric field triggering switch are connected in series, and the component materials of the nonlinear high-voltage triggering current semiconductor comprise: bismuth oxide, antimony oxide, cobalt oxide, manganese oxide, chromium oxide, silicon oxide, aluminum hydroxide, silver nitrate, aluminum oxide, silver carbonate, boron oxide, tin oxide, copper oxide, nickel oxide, zinc oxide, and tin oxide. The transient pulse voltage suppressor disclosed by the invention is used on a motor-driven field lightning protection system, can realize high-voltage absorption of high-energy lightning, eliminates and reduces the comprehensive harm of lightning electromagnetic pulse to military electronic equipment, and has obvious effect especially in areas with complex geological conditions such as mountains, islands, gobi, grasslands and the like.
Description
Technical Field
The invention relates to the technical field of lightning protection devices, in particular to a transient pulse voltage suppressor.
Background
In modern war, fixed command systems, communication systems, weaponry and medical logistics replenishment systems have extremely poor geographic position fixation and destruction resistance, and are difficult to adapt to the war survival requirement under high technical conditions. Comprising the following steps: the integrated comprehensive information systems of the mobile small-area field operation battle array, the mobile field command post, the mobile field hospital, the mobile field logistics support warehouse, the mobile field communication vehicle (field radar vehicle, field monitoring vehicle, communication command vehicle) and the mobile small-area operation battle array (radar station, sightseeing station, command center machine room) and the like all have the functions of transferring and maneuvering deployment at any time. The fight requirements temporarily set under different environmental conditions are different, and the system can also cope with the examination of the severe natural environment and climate besides defending the attack of the enemy 'soft killing' and 'hard destroying'. In particular lightning destruction is of particular importance. A lightning means a single or multiple lightning current surge that can cause serious damage to electronic system lines and equipment. This is a devastating damage to the information-bearing device. Because thunder has the trend and the characteristics of searching for the rapid neutralization of the minimum path released thundercloud charge and the ground opposite charge, the mobile field operation system works in the field, when a lightning phenomenon occurs nearby, strong induced thunder waves easily enter equipment along a cable line and a communication signal line, and equipment damage and personal safety accidents are caused.
Therefore, the lightning protection device meets the use requirements of all regions and all weather, fully ensures the personal safety and the equipment safety, and has become an essential key link in the safety design of the mobile field operation system. The military issues for this purpose are also correspondingly issued: GJB7581-2012 "lightning protection requirement of motor communication system", GJB5080-2004 "lightning protection design and use requirement of military communication facility", GJB6784-2009 "lightning protection general requirement of military ground electronic facility", GJB6071-2007 "lightning protection technical requirement of military weather station", GJB1389A-2005 "system electromagnetic compatibility requirement", GJB8848-2016 "system electromagnetic environmental effect test method", GB18802.12-2014 "surge protector of low voltage distribution system": the standards of the rules are selected and used, and the like, so that the problems of lightning hazard and lightning protection are thoroughly reduced and solved.
The transient pulse voltage suppressor in the motor-driven small-area field power lightning protection device in the prior art has at least the following disadvantages:
disadvantage 1: basically, a single varistor element for surge protection is used, and the main function is to suppress a line surge with a small probability, and usually absorb energy of several joules or less, and high voltage and overvoltage caused by high-energy lightning are not substantially effective.
Disadvantage 2: a transient pulse voltage suppressor in a motor-driven small-area field power lightning protection device basically uses a single voltage dependent resistor element for surge protection, mainly suppresses surge voltage under current behavior, basically has no suppression effect when no current exists, and does not act when a single lightning high voltage exists.
Disadvantage 3: the transient pulse voltage suppressor in the motor-driven small-area field power lightning protection device basically uses a single voltage dependent resistor element for surge protection, and the residual voltage is too high after the operation, so that equipment damage can still be caused even if the operation is performed.
Disadvantage 4: a transient pulse voltage suppressor in a motor-driven small-area field power lightning protection device basically uses a single voltage-dependent resistor element for surge protection, and the leakage current of the voltage-dependent resistor element is increased after the voltage-dependent resistor element is aged in a power supply system, so that the voltage-dependent resistor element has the risk of ignition.
Disadvantage 5: the transient pulse voltage suppressor in the motor-driven small-area field power lightning protection device basically uses a single voltage-dependent resistor element for surge protection, and can not realize the most basic requirement of double electron multiplication of national army standard because of its own design, definition, system parameters and application range.
Disclosure of Invention
Embodiments of the present invention provide a transient pulse voltage suppressor that overcomes the problems of the prior art.
A transient pulse voltage suppressor comprising: and the transient pulse voltage suppressor is connected with the load circuit in parallel.
Preferably, the nonlinear high-voltage triggering inrush current semiconductor is a grain boundary layer nonlinear semiconductor, the static material is ordered into disordered single-grain primary battery principle, when an external applied electric field meets the requirement of breaking a boundary barrier interface, the grain boundary layer semiconductors realize directional ordered arrangement, the nonlinear coefficient meets more than 60, the electric field realizes potential transmission in a charge form, a charge flow is formed, and the high-voltage electric field is reduced.
Preferably, the electric field trigger switch comprises a discharge gap with multiple electrodes with trigger functions inside, the discharge gap is sealed by neon or helium, upper and lower electrodes in the multiple electrodes are functional electrodes, a central electrode is a pulse trigger electrode, the discharge gap comprises a high-frequency capacitor and a variable resistor, the high-frequency capacitor is a low-capacitance multi-stack trigger capacitor, and the variable resistor is a parallel body formed by connecting a voltage rheostat and a set discharge resistor in parallel.
Preferably, when the lightning high voltage comes, after the capacitor in the discharge gap completes ignition, the discharge gap starts to work to form a loop effect, the nonlinear high voltage triggering current semiconductor is triggered to start to work, and the variable resistance function is used for removing a pilot discharge voltage burr channel formed by the electric field triggering switch, so that the residual voltage meets the system requirement.
Preferably, the parallel connection between the transient pulse voltage suppressor and the load circuit comprises a kevlar connection mode.
Preferably, the field triggering potential of the electric field triggering switch is less than or equal to 200-350V, the triggering time is less than or equal to 50 nanoseconds, the triggering current is less than or equal to 1KA, the high-frequency pulse current of the capacitor in the discharge gap is more than 5A, and the resistance value of the discharge resistor is not less than 1MΩ.
Preferably, the initial voltage of the nonlinear high-voltage triggering surge semiconductor is less than or equal to 150-300V, and the pulse end current is as follows: less than or equal to 5KA, transient node resistance: less than or equal to 0.01 omega, arc voltage drop: the triggering time is not less than 20 nanoseconds and is not more than 30V.
Preferably, the nonlinear high-voltage triggering surge semiconductor comprises the following component materials: bismuth oxide, antimony oxide, cobalt oxide, manganese oxide, chromium oxide, silicon oxide, aluminum hydroxide, silver nitrate, aluminum oxide, silver carbonate, boron oxide, tin oxide, copper oxide, nickel oxide, zinc oxide, and tin oxide;
the molar ratio of the components is as follows:
ZnO，69-90％；Bi 2 O 3 ，1-1.2％；Sb 2 O 3 ，0.1-2％；CO 2 O 3 ，0.1-0.3％；MnO 2 ，0.1-0.3％；Sn 2 O 3 ，0.1-0.92％；Cr 2 O 3 ，0.15-1.5％；SiO 2 ，0.02-0.50％；NiO，0.4-1.05％；AL(OH) 3 ，0.01-0.09％；AGCO 3 ，0.01-0.09％。
preferably, the method for manufacturing the nonlinear high-voltage triggering current semiconductor comprises the following processing steps:
step 1: proportioning materials
Bismuth oxide, antimony oxide, cobalt oxide, manganese oxide, chromium oxide, silicon oxide, aluminum hydroxide, silver nitrate, aluminum oxide, silver carbonate, boron oxide, tin oxide, copper oxide, nickel oxide, zinc oxide and tin oxide component materials are assembled according to the molar ratio requirement and then are placed into a closed container;
step 2: ball milling and mixing
Putting the prepared materials into a ball mill, adding adhesive and water into the ball mill, and performing ball milling and mixing;
step 3: spray granulation
Putting the ball-milled and mixed materials into a spray granulator for granulation to obtain granule materials;
step 4: tabletting and shaping
Placing the granular materials into a grinding tool of a press, and performing pressing, pressure maintaining and demolding treatment on the granular materials by the press to obtain a product blank of a geometric shape body of a ceramic semiconductor structure;
step 5: blank chip
Stacking a plurality of product blanks in a refractory material container for sintering;
step 6: discharging glue and sintering at high temperature
Placing a refractory material container filled with a product blank into a tunnel kiln to realize primary sintering and glue discharging, wherein the sintering temperature is as follows: placing the refractory material container after sintering and glue discharging into a high-temperature tunnel kiln for sintering for 4-24 hours at the temperature of 1000-1300 ℃, wherein the appearance of a blank body is black ceramic sheet after sintering;
step 7: electrode attachment
Coating bismuth oxide silver paste on the section of the sintered blank body according to the shape of the geometric sheet body, and placing the blank body into a tunnel kiln path for electrode sintering at 400-900 ℃ for 1-6 hours;
step 8, side surface insulation treatment
Brushing glass glaze insulating slurry on the side surface of the green body after the electrodes are attached, and sintering after drying, wherein the sintering temperature range is as follows: 250-800 ℃;
and 9, respectively welding a tinned copper wire serving as an element electrode wire on the electrode surface of the blank body to obtain the nonlinear high-voltage trigger surge semiconductor, wherein the wire diameter of the tinned copper wire is 0.6-1.2mm, coating high-insulation epoxy resin on the outer surface of the nonlinear high-voltage trigger surge semiconductor for surface insulation, coating the tinned copper wire, and then drying and curing at 75-85 ℃ for 4 hours.
According to the technical scheme provided by the embodiment of the invention, the transient pulse voltage suppressor is used in a motor-driven field lightning protection system, can realize high-voltage absorption of high-energy lightning, eliminates and reduces comprehensive harm of lightning electromagnetic pulse to military electronic equipment, and has obvious effect especially in geological complex areas such as mountains, islands, gobi, grasslands and the like.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a block diagram of a transient pulse voltage suppressor according to an embodiment of the present invention;
fig. 2 is a schematic diagram of an implementation principle of a method for manufacturing a nonlinear high-voltage triggered surge semiconductor according to an embodiment of the present invention.
Detailed Description
For the purpose of facilitating an understanding of the embodiments of the invention, reference will now be made to the drawings of several specific embodiments illustrated in the drawings and in no way should be taken to limit the embodiments of the invention.
The embodiment of the invention provides a transient pulse voltage suppressor, the structure of which is shown in fig. 1, and which is formed by connecting a nonlinear high-voltage trigger surge semiconductor 1 and an electric field trigger switch 2 in series.
The nonlinear high-voltage triggering surge semiconductor has the structural characteristics that: for the grain boundary layer nonlinear semiconductor, the static material is ordered into disordered single-grain primary battery principle, once an external applied electric field meets the requirement of breaking the boundary barrier interface, the grain boundary layer semiconductor realizes directional (or bidirectional) ordered arrangement, namely the nonlinear coefficient meets more than 60, the electric field realizes potential transmission in the form of electric charge, so that electric charge flow is formed, and the high-voltage electric field is reduced.
Working principle of nonlinear high-voltage triggering surge semiconductor: manual intervention can be realized through the formula and the process means, so that the requirement of the required residual electric field potential (namely, residual voltage) is met, and meanwhile, the requirement of the maximum continuous working voltage in practical application is met. Through system parameter test and matching, the series connection and parallel connection of a plurality of nonlinear high-voltage triggering surge semiconductors can be met, and under the condition that a volt-ampere curve, a resistance-voltage asymptote, a distributed capacitance and the like meet a plurality of conditions, the ohm law of 0.8 multiplying power can be effectively realized, and reference design is carried out.
The electric field trigger switch has the structural characteristics that: 1 a multi-electrode discharge gap with trigger function, which is sealed by neon or helium, wherein the multi-electrode can be 3 electrode, 4 electrode or 5 electrode, the upper and lower electrodes in the multi-electrode are function electrodes, and the central electrode is pulse trigger electrode. The discharge gap comprises a capacitor and a variable resistor, and the capacitor is a low-capacitance multi-stack trigger capacitor. The variable resistor is a parallel body formed by connecting a voltage rheostat and a set discharge resistor in parallel. The pulse ignition function is provided, and meanwhile, the discharging resistor also takes charge of the capacitor.
The working principle of the electric field trigger switch is as follows: the manual intervention can be realized by the technological means such as high-frequency capacitive reactance of the capacitor, and the like, so that the requirement of the needed residual electric field potential (namely, residual voltage) is met. When the lightning high voltage comes, after the capacitor works first to finish the ignition task, the discharge gap starts to work to form a loop effect, the nonlinear high voltage trigger surge semiconductor starts to work, and the huge resistance changing (changing from high resistance to resistance) function can clear the pilot discharge voltage burr channel formed by the electric field trigger switch, so that the residual voltage meets the system requirement (namely double electron multiplication) and the specific requirement of national army standard is realized.
After the nonlinear high-voltage triggering inrush current semiconductor and the electric field triggering switch are electrically connected in series, the nonlinear high-voltage triggering inrush current semiconductor and the electric field triggering switch are connected in parallel with a load circuit, the parallel connection realizes a Kelvin wiring mode as much as possible, and comprehensive equipotential connection is realized to the greatest extent. The nonlinear high-voltage trigger surge semiconductor and the electric field trigger switch must be connected in series without leakage current, and are also the preference of residual voltage. The high-frequency capacitance of the capacitor is as small as possible, 10-50 layers are usually selected, the high-frequency pulse current is more than 5A, the resistance value of the discharge resistor determines the discharge time of the capacitor, and meanwhile, the continuous and multi-pulse lightning resisting parameter is also determined to select, which is generally not less than 1MΩ.
The parameters of the transient pulse voltage suppressor are selected as follows:
* An electric field trigger switch:
the field triggering potential is less than or equal to 200-350V
The triggering time is less than or equal to 50 nanoseconds
Trigger current is less than or equal to 1KA
* Nonlinear high voltage triggered inrush current semiconductor:
the initial voltage is less than or equal to 150-300V
Pulse end point current: less than or equal to 5KA
Transient node resistance: less than or equal to 0.01 omega
Arc pressure drop: less than or equal to 30V
Triggering time is not less than 20 nanoseconds
The nonlinear high-voltage triggering surge semiconductor comprises the following component materials:
bismuth oxide, antimony oxide, cobalt oxide, manganese oxide, chromium oxide, silicon oxide, aluminum hydroxide, silver nitrate, aluminum oxide, silver carbonate, boron oxide, tin oxide, copper oxide, nickel oxide, zinc oxide, tin oxide and other metal oxides, and a nonlinear coefficient of more than 90 is an electrical parameter describing the nonlinear strength of a nonlinear high-voltage trigger surge semiconductor (a function of current and voltage). The relation can be established through experiments, and the nonlinear strength can be seen from the function relation between the current and the voltage. A nonlinear high-voltage triggering surge current semiconductor is taken, pulse voltage is applied to two ends of the nonlinear high-voltage triggering surge current semiconductor, the pulse width is narrow enough not to enable the semiconductor to generate heat, current values corresponding to voltage values are measured and recorded, points are drawn on a double-logarithmic coordinate, and a volt-ampere characteristic curve is obtained.
Typical molar proportions of the component materials are:
ZnO(69-90％)；Bi 2 O 3 (1-1.2％)；Sb 2 O 3 (0.1-2％)；CO 2 O 3 (0.1-0.3％)；MnO 2 (0.1-0.3％)；Sn 2 O 3 (0.1-0.92％)；Cr 2 O 3 (0.15-1.5％)；SiO 2 (0.02-0.50％)；NiO(0.4-1.05％)；AL(OH) 3 (0.01-0.09％)；AGCO 3 (0.01-0.09％)。
the implementation principle schematic diagram of the method for manufacturing the nonlinear high-voltage triggering current semiconductor provided by the embodiment of the invention is shown in fig. 2, and the method comprises the following processing steps:
step 1: and (5) batching.
The bismuth oxide, antimony oxide, cobalt oxide, manganese oxide, chromium oxide, silicon oxide, aluminum hydroxide, silver nitrate, aluminum oxide, silver carbonate, boron oxide, tin oxide, copper oxide, nickel oxide, zinc oxide, tin oxide and other component materials are assembled according to the formula requirement and then are placed into a closed container.
Step 2: ball milling and mixing.
And (3) putting the prepared materials into a ball mill, adding adhesive and water into the ball mill, and performing ball milling and mixing.
Step 3: and (5) spray granulation.
And (3) putting the ball-milled and mixed materials into a spray granulator for granulation, so as to obtain the laundry powder granule.
Step 4: tabletting and shaping
Placing the above-mentioned granules into grinding tool of press machine, then the press machine can begin to make the above-mentioned granules undergo the processes of pressing, pressure-retaining and demoulding treatment so as to obtain the product blank of geometric form body of ceramic semiconductor structureThe blank can be any geometric shape body such as a round shape, a rectangular sheet and the like, and the molding shape is determined by a press mold. The density of the formed blank is as follows: 2.5-4.2g/cm 3 The thickness may be set according to circumstances.
Step 5: blank chips.
Stacking a plurality of product blanks in a special refractory material container for sintering.
Step 6: and (5) discharging glue and sintering at high temperature.
Placing a refractory material container filled with a product blank into a tunnel kiln to realize primary sintering and glue discharging, wherein the sintering temperature is as follows: 300-800 ℃. And (3) placing the sintered and adhesive-removed refractory material container into a high-temperature tunnel kiln for 4-24 hours of sintering, wherein the sintering temperature is 1000-1300 ℃. The appearance of the sintered blank body is a black ceramic sheet, and the millimeter voltage (namely, the conduction voltage of the sintered blank body at each millimeter under the test of DC1mA at two ends) is as follows: 50-100V/mm. The density range of the green body after the process treatment is as follows: 3.2-5.8g/cm 3 。
Step 7: the electrodes are attached.
The bismuth oxide silver paste is coated on the section of the sintered blank body according to the shape of the geometric sheet body, and is put into a tunnel kiln path for electrode sintering, wherein the sintering temperature is 400-900 ℃ and the sintering time is 1-6 hours (namely, the process of attaching the conductive metal electrode).
And 8, side surface insulation treatment.
And brushing glass glaze insulating slurry on the side surface of the green body after the electrodes are attached. The glass glaze insulation may be: silicon-lead, silicon-titanium, silicon-lead-titanium, etc., the primary substrate may be: silicon oxide, boron oxide, aluminum oxide, lead oxide, titanium oxide, calcium oxide, magnesium oxide, barium oxide, potassium oxide, sodium oxide and the like, ball milling and mixing glass glaze insulation and a main base material, applying an adhesive to obtain glass glaze insulation slurry, brushing the glass glaze insulation slurry on the side surface of a sintered geometric sheet-shaped body, drying, sintering, and sintering at a temperature range: 250-800 ℃.
And 9, respectively welding a tinned copper wire serving as an element electrode wire on the electrode surface of the blank body to obtain the nonlinear high-voltage trigger current semiconductor, wherein the wire diameter of the tinned copper wire can be 0.6-1.2mm. The outer surface of the nonlinear high-voltage triggering surge semiconductor is coated with high-insulation epoxy resin, so that the surface insulation is realized, and the tin-plated copper wire cannot be coated. Then, the mixture is dried and solidified for 4 hours at 75-85 ℃.
The transient pulse voltage suppressor provided by the embodiment of the invention can be used as a second-stage protection device in the lightning protection device of the motor-driven small-area field trunk cable.
Those of ordinary skill in the art will appreciate that: the drawing is a schematic diagram of one embodiment and the modules or flows in the drawing are not necessarily required to practice the invention.
Those of ordinary skill in the art will appreciate that: the modules in the apparatus in the embodiments may be distributed in the apparatus in the embodiments according to the description of the embodiments, or may be located in one or more apparatuses different from the present embodiments with corresponding changes. The modules of the above embodiments may be combined into one module, or may be further split into a plurality of sub-modules.
In summary, the transient pulse voltage suppressor of the embodiment of the invention is used in a motor-driven field lightning protection system, can realize high-voltage absorption of high-energy lightning, eliminates and reduces comprehensive harm of lightning electromagnetic pulse to military electronic equipment, and has obvious effect especially in areas with complex geological conditions such as mountain, island, gobi, grassland and the like.
The transient pulse voltage suppressor provided by the embodiment of the invention is applied to a motor-driven small-area field lightning protection system in the earlier stage. The effect is good.
The transient pulse voltage suppressor disclosed by the embodiment of the invention is applied to a motor-driven small-area field lightning protection system, and is a technology capable of absorbing high voltage and high current caused by lightning, or absorbing single high voltage and single high current, and the like, and protecting the lightning in an omnibearing and full-mode manner.
The transient pulse voltage suppressor disclosed by the embodiment of the invention is used on a motor-driven small-area field lightning protection system, so that the residual voltage of the system is controlled and absorbed, and the transient pulse voltage suppressor is a terminal defense line of protection equipment.
The transient pulse voltage suppressor disclosed by the embodiment of the invention is used on a motor-driven small-area field lightning protection system, so that the leakage current of the system can not catch fire, and the system is safe and reliable.
The transient pulse voltage suppressor disclosed by the embodiment of the invention is used for a motor-driven small-area field lightning protection system, and realizes key and core technologies of the most basic requirement of the national army standard of double electron multiplication.
The present invention is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present invention are intended to be included in the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.
Claims (7)
1. A transient pulse voltage suppressor comprising: the nonlinear high-voltage trigger surge semiconductor and the electric field trigger switch are connected in series, and the transient pulse voltage suppressor is connected with the load circuit in parallel;
the nonlinear high-voltage triggering surge semiconductor comprises the following component materials: bismuth oxide, antimony oxide, cobalt oxide, manganese oxide, chromium oxide, silicon oxide, aluminum hydroxide, silver nitrate, aluminum oxide, silver carbonate, boron oxide, tin oxide, copper oxide, nickel oxide, zinc oxide, and tin oxide;
the molar ratio of the components is as follows:
ZnO，69-90％；Bi 2 O 3 ，1-1.2％；Sb 2 O 3 ，0.1-2％；CO 2 O 3 ，0.1-0.3％；MnO 2 ，0.1-0.3％；Sn 2 O 3 ，0.1-0.92％；Cr 2 O 3 ，0.15-1.5％；SiO 2 ，0.02-0.50％；NiO，0.4-1.05％；AL(OH) 3 ，0.01-0.09％；AGCO 3 ，0.01-0.09％；
the manufacturing method of the nonlinear high-voltage triggering current semiconductor comprises the following processing steps:
step 1: proportioning materials
Bismuth oxide, antimony oxide, cobalt oxide, manganese oxide, chromium oxide, silicon oxide, aluminum hydroxide, silver nitrate, aluminum oxide, silver carbonate, boron oxide, tin oxide, copper oxide, nickel oxide, zinc oxide and tin oxide component materials are assembled according to the molar ratio requirement and then are placed into a closed container;
step 2: ball milling and mixing
Putting the prepared materials into a ball mill, adding adhesive and water into the ball mill, and performing ball milling and mixing;
step 3: spray granulation
Putting the ball-milled and mixed materials into a spray granulator for granulation to obtain granule materials;
step 4: tabletting and shaping
Placing the granular materials into a grinding tool of a press, and performing pressing, pressure maintaining and demolding treatment on the granular materials by the press to obtain a product blank of a geometric shape body of a ceramic semiconductor structure;
step 5: blank chip
Stacking a plurality of product blanks in a refractory material container for sintering;
step 6: discharging glue and sintering at high temperature
Placing a refractory material container filled with a product blank into a tunnel kiln to realize primary sintering and glue discharging, wherein the sintering temperature is as follows: placing the refractory material container after sintering and glue discharging into a high-temperature tunnel kiln for sintering for 4-24 hours at the temperature of 1000-1300 ℃, wherein the appearance of a blank body is black ceramic sheet after sintering;
step 7: electrode attachment
Coating bismuth oxide silver paste on the section of the sintered blank body according to the shape of the geometric sheet body, and placing the blank body into a tunnel kiln path for electrode sintering at 400-900 ℃ for 1-6 hours;
step 8, side surface insulation treatment
Brushing glass glaze insulating slurry on the side surface of the green body after the electrodes are attached, and sintering after drying, wherein the sintering temperature range is as follows: 250-800 ℃;
and 9, respectively welding a tinned copper wire serving as an element electrode wire on the electrode surface of the blank body to obtain the nonlinear high-voltage trigger surge semiconductor, wherein the wire diameter of the tinned copper wire is 0.6-1.2mm, coating high-insulation epoxy resin on the outer surface of the nonlinear high-voltage trigger surge semiconductor for surface insulation, coating the tinned copper wire, and then drying and curing at 75-85 ℃ for 4 hours.
2. The transient impulse voltage suppressor of claim 1, wherein when an externally applied electric field satisfies a broken boundary barrier interface, said nonlinear high-voltage trigger surge semiconductors realize directional ordered arrangement, and the nonlinear coefficient satisfies 60 or more, and the electric field realizes electric potential transfer in the form of electric charge, forming a charge flow, and reducing the high-voltage electric field.
3. The transient pulse voltage suppressor of claim 1, wherein said electric field trigger switch comprises a discharge gap with trigger function multiple electrodes inside, the discharge gap is sealed by neon or helium, upper and lower electrodes of said multiple electrodes are function electrodes, central electrode is pulse trigger electrode, said discharge gap comprises high frequency capacitor and variable resistor, the high frequency capacitor is low capacitance multi-stack trigger capacitor, and the variable resistor is parallel body formed by parallel connection of voltage varistor and set discharge resistor.
4. A transient pulse voltage suppressor of claim 3, wherein when lightning high voltage is coming, after the capacitor in the discharge gap completes ignition, the discharge gap begins to operate, forming a loop effect, triggering the nonlinear high voltage-triggered inrush current semiconductor to begin operating, and the varistor function will clear the pilot discharge voltage burr channel formed by the electric field-triggered switch, so that the residual voltage meets the system requirements.
5. The transient impulse voltage suppressor of claim 1, wherein the parallel connection between said transient impulse voltage suppressor and a load circuit comprises a kevlar connection.
6. The transient pulse voltage suppressor of claim 1, wherein the field trigger potential of said electric field trigger switch is no more than 200-350V, the trigger time is no more than 50 ns, the trigger current is no more than 1KA, the high frequency pulse current of the capacitor in the discharge gap is > 5A, and the resistance of the discharge resistor is no more than 1mΩ.
7. The transient pulse voltage suppressor of claim 1, wherein said nonlinear high voltage triggered surge semiconductor has a starting voltage of 150-300V and a pulse end current: less than or equal to 5KA, transient node resistance: less than or equal to 0.01 omega, arc voltage drop: the triggering time is not less than 20 nanoseconds and is not more than 30V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010098901.4A CN111181143B (en) | 2020-02-18 | 2020-02-18 | Transient pulse voltage suppressor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010098901.4A CN111181143B (en) | 2020-02-18 | 2020-02-18 | Transient pulse voltage suppressor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111181143A CN111181143A (en) | 2020-05-19 |
| CN111181143B true CN111181143B (en) | 2023-07-25 |
Family
ID=70623496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010098901.4A Active CN111181143B (en) | 2020-02-18 | 2020-02-18 | Transient pulse voltage suppressor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111181143B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5107242A (en) * | 1990-08-20 | 1992-04-21 | Ngk Insulators, Ltd. | Voltage non-linear resistor for gapped lightning arrestors and method of producing the same |
| JP2002167273A (en) * | 2000-11-30 | 2002-06-11 | Osaka Prefecture | Zinc oxide porcelain composition, its manufacturing method, zinc oxide varistor and zinc oxide varistor device using it |
| CN1902795A (en) * | 2003-12-30 | 2007-01-24 | 苏勒过压保护公司 | Device for protection against voltage surges with parallel simultaneously triggered spark-gaps |
| CN101213713A (en) * | 2005-07-01 | 2008-07-02 | 诺基亚电容器公司 | Method and arrangement for triggering a series spark gap |
| CN104150896A (en) * | 2014-08-08 | 2014-11-19 | 汕头高新区松田实业有限公司 | High-through-flow small-sized zinc oxide varistor dielectric material and preparation method thereof |
| CN105272208A (en) * | 2015-11-07 | 2016-01-27 | 汕头高新区松田实业有限公司 | Zinc oxide piezoresistor dielectric material and preparation method thereof |
| CN109546637A (en) * | 2018-11-28 | 2019-03-29 | 厦门赛尔特电子有限公司 | A kind of surge protection device and system |
| CN211908363U (en) * | 2020-02-18 | 2020-11-10 | 北京捷安通达科贸有限公司 | Transient impulse voltage suppressor |
-
2020
- 2020-02-18 CN CN202010098901.4A patent/CN111181143B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5107242A (en) * | 1990-08-20 | 1992-04-21 | Ngk Insulators, Ltd. | Voltage non-linear resistor for gapped lightning arrestors and method of producing the same |
| JP2002167273A (en) * | 2000-11-30 | 2002-06-11 | Osaka Prefecture | Zinc oxide porcelain composition, its manufacturing method, zinc oxide varistor and zinc oxide varistor device using it |
| CN1902795A (en) * | 2003-12-30 | 2007-01-24 | 苏勒过压保护公司 | Device for protection against voltage surges with parallel simultaneously triggered spark-gaps |
| CN101213713A (en) * | 2005-07-01 | 2008-07-02 | 诺基亚电容器公司 | Method and arrangement for triggering a series spark gap |
| CN104150896A (en) * | 2014-08-08 | 2014-11-19 | 汕头高新区松田实业有限公司 | High-through-flow small-sized zinc oxide varistor dielectric material and preparation method thereof |
| CN105272208A (en) * | 2015-11-07 | 2016-01-27 | 汕头高新区松田实业有限公司 | Zinc oxide piezoresistor dielectric material and preparation method thereof |
| CN109546637A (en) * | 2018-11-28 | 2019-03-29 | 厦门赛尔特电子有限公司 | A kind of surge protection device and system |
| CN211908363U (en) * | 2020-02-18 | 2020-11-10 | 北京捷安通达科贸有限公司 | Transient impulse voltage suppressor |
Non-Patent Citations (1)
| Title |
|---|
| 何利民等.避雷器.《电工手册》.中国建筑工业出版社,1993,第979-988页. * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111181143A (en) | 2020-05-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103745898B (en) | A kind of surface-adhered type over-voltage and over-current protector part and preparation method thereof | |
| CN111029071A (en) | Preparation method of medium-voltage gradient zinc oxide piezoresistor MOV chip | |
| CN104944935A (en) | ZnO varister ceramic and preparation method thereof | |
| CN111462970B (en) | Lightning-protection annular zinc oxide resistance card for distribution network and preparation method thereof | |
| US10546671B2 (en) | Voltage nonlinear resistor | |
| CN211908363U (en) | Transient impulse voltage suppressor | |
| CN105016721A (en) | Method for preparation of ZnO varistor ceramic by common doping of aluminum, gallium and yttrium ions | |
| CN111181143B (en) | Transient pulse voltage suppressor | |
| CN105481363A (en) | Large-discharge-current-capacity low-residual-voltage high-gradient zinc oxide piezoresistor ceramic | |
| JP5065624B2 (en) | Current-voltage non-linear resistors and lightning arresters | |
| CN211351251U (en) | Direct lightning protection device | |
| CN204204542U (en) | There is the temperature-sensitive device of over-voltage protecting function, protective circuit and electronic equipment | |
| CN104600568A (en) | Ceramic ESD (electro-static discharge) suppressor and production method thereof | |
| US5764129A (en) | Ceramic resistor, production method thereof, neutral grounding resistor and circuit breaker | |
| CN203674132U (en) | Surface mounted overvoltage and overcurrent protection device | |
| JP7242274B2 (en) | voltage nonlinear resistor | |
| CN210667949U (en) | Large-capacity cable sheath overvoltage limiter | |
| CN212782901U (en) | High-reliability overcurrent protection element | |
| CN104464992A (en) | Method for preparing functional slurry of chip-type static suppressor | |
| CN108063035B (en) | High-capacity lightning arrester constructed by using low-melting-point alloy and method thereof | |
| US20100157492A1 (en) | Electronic device and associated method | |
| CN204517398U (en) | Low residual voltage zinc oxide arrester | |
| CN111129957A (en) | Direct lightning protection device | |
| EP2709116B1 (en) | Nonlinear resistive element | |
| CN202549524U (en) | Positive temperature coefficient (PTC) thermistor with stable performance |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20200921 Address after: Bridge in the town of Mao Santou village of Cixi city in Zhejiang province Ningbo city 315317 Applicant after: CIXI WANNENG ELECTRONICS Co.,Ltd. Applicant after: BEIJING JIEAN TONGDA TECHNOLOGY TRADE Co.,Ltd. Address before: 102300 a-3640, building 3, No. 20 Yong'an Road, Shilong Economic Development Zone, Mentougou District, Beijing Applicant before: BEIJING JIEAN TONGDA TECHNOLOGY TRADE Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: Maosanxiang village, Qiaotou town, Cixi City, Ningbo City, Zhejiang Province Applicant after: CIXI WANNENG ELECTRONICS Co.,Ltd. Applicant after: Beijing Jie'an Tongda Technology Co.,Ltd. Address before: Maosanxiang village, Qiaotou town, Cixi City, Ningbo City, Zhejiang Province Applicant before: CIXI WANNENG ELECTRONICS Co.,Ltd. Applicant before: Beijing Jiean Tongda Technology Trade Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |