CN111180994A

CN111180994A - LD light-emitting device and preparation method thereof

Info

Publication number: CN111180994A
Application number: CN202010110471.3A
Authority: CN
Inventors: 申小飞; 曹永革; 李英魁; 麻朝阳; 文子诚; 王恩哥; 王充
Original assignee: Songshan Lake Materials Laboratory
Current assignee: Institute of Physics of CAS; Songshan Lake Materials Laboratory
Priority date: 2020-02-21
Filing date: 2020-02-21
Publication date: 2020-05-19

Abstract

The application relates to the field of optical elements, in particular to an LD light-emitting device and a preparation method thereof. The LD light-emitting device comprises a substrate, a fluorescent layer, a heat sink, an LD chip and an optical lens. The backlight surface of the fluorescent layer is attached to the substrate; the LD chip is arranged on the heat sink, and at least part of light beams emitted by the LD chip can irradiate the reflecting surface of the fluorescent layer; the optical lens is connected with the substrate. The whole backlight surface of the fluorescent layer can be subjected to heat conduction through the substrate, so that the direct contact area of the fluorescent layer and the substrate is increased, and the heat transfer efficiency is increased. The heat of the fluorescent layer is quickly dissipated through the substrate; the light of the LD chip can only irradiate the reflecting surface of the fluorescent layer, so that the heat conducted to the fluorescent layer by the LD chip is reduced, and the heat dissipation problem of the fluorescent layer is improved to a great extent. The failure condition of the fluorescent layer due to poor heat dissipation is effectively improved, and the light attenuation or color drift problem of the LD light-emitting device is further improved.

Description

LD light-emitting device and preparation method thereof

Technical Field

The application relates to the field of optical elements, in particular to an LD light-emitting device and a preparation method thereof.

Background

At present, a light emitting device of a laser diode generally adopts a fluorescent functional material to convert monochromatic laser into white light; the thermal conductivity of the fluorescent material is low, the thermal stability is poor, and the blue laser emitted by the laser diode easily causes the thermal quenching failure of the fluorescent material, so that the problems of light decay or color drift and the like are caused.

Disclosure of Invention

An object of the embodiments of the present application is to provide an LD light emitting device and a method for manufacturing the same, which aim to solve the problem that laser emitted from an existing LD chip is prone to cause failure of a fluorescent material.

The present application provides, in a first aspect, an LD light-emitting device including a substrate, a fluorescent layer, a heat sink, an LD chip, and an optical lens.

The fluorescent layer comprises a backlight surface and a reflecting surface which are opposite, and the backlight surface is attached to the substrate; the heat sink is arranged on the substrate; the LD chip is arranged on the heat sink, and at least part of light beams emitted by the LD chip can irradiate the reflecting surface; the optical lens is connected with the substrate and forms a cavity for accommodating the fluorescent layer, the heat sink and the LD chip.

The LD chip is arranged on the heat sink, so that light emitted by the LD chip is irradiated on the reflecting surface of the fluorescent layer, the fluorescent layer converts part of light, and the converted light and the unconverted light are synthesized into white light. The backlight surface of the fluorescent layer is connected with the substrate, and the whole backlight surface of the fluorescent layer can conduct heat through the substrate, so that the direct contact area of the fluorescent layer and the substrate is increased, and the heat transfer efficiency is increased. The heat of the fluorescent layer is quickly dissipated through the substrate; in addition, the light of the LD chip can only irradiate the reflecting surface of the fluorescent layer, thereby reducing the heat conducted from the LD chip to the fluorescent layer and greatly improving the heat dissipation problem of the fluorescent layer. The failure condition of the fluorescent layer due to poor heat dissipation is effectively improved, and the light attenuation or color drift problem of the LD light-emitting device is further improved.

In some embodiments of the first aspect of the present application, the LD light emitting device includes a plurality of heat sinks and a plurality of LD chips; the heat sinks are arranged on the substrate and are arranged at intervals along the periphery of the fluorescent layer; each heat sink is provided with at least one LD chip; at least part of light beams emitted by each LD chip can irradiate the fluorescent layer;

optionally, a plurality of heat sinks are arranged in an array along the periphery of the phosphor layer.

The LD light-emitting device can comprise a plurality of heat sinks and a plurality of LD chips, and can meet different light brightness requirements; the multiple heat sinks and the multiple LD chips are not easy to cause the failure of the fluorescent layer due to poor heat dissipation. The plurality of heat sinks are arranged along the periphery of the fluorescent layer in an array mode, so that the plurality of LD chips can irradiate more light to the fluorescent layer for conversion.

In some embodiments of the first aspect of the present application, the LD chip is mounted on the top surface of the heat sink, and the height of the top surface of the heat sink gradually decreases along a direction close to the fluorescent layer, so that the light emitting direction of the LD chip is directed to the light reflecting surface.

The LD chip is arranged on the inclined top surface, so that light emitted by the LD chip is irradiated on the fluorescent layer, the fluorescent layer converts part of light, and the converted light and unconverted light are synthesized into white light.

In some embodiments of the first aspect of the present application, an included angle between the top surface of the heat sink and a plane where the light reflecting surface is located is 0 to 90 °;

optionally, an included angle between the top surface of the heat sink and the plane where the light reflecting surface is located is 15-25 °.

In some embodiments of the first aspect of the present application, the LD chip is disposed on the heat sink, so that a center point of light emitted from the LD chip irradiates a center point of the light reflecting surface.

The center point of the light emitted by the LD chip irradiates the center point of the surface of the fluorescent layer, so that the LD chip has more light rays irradiating the fluorescent layer for conversion.

In some embodiments of the first aspect of the present application, the LD light emitting device includes a heat conducting dam and a substrate, the optical lens is connected to the heat conducting dam, and the fluorescent layer is disposed on the substrate; the heat sink is arranged on the substrate and connected with the inner wall of the heat-conducting dam;

optionally, the heat sink is integral with the thermally conductive dam.

The heat sink is connected with the heat-conducting dam, and heat emitted by the LD chip can be further dissipated by transferring the heat to the heat-conducting dam through the heat sink, so that the heat dissipation effect of the LD chip is improved.

In some embodiments of the first aspect of the present application, the thermally conductive dam and the heat sink are both made of an electrically conductive and thermally conductive material.

The conductive heat conduction material can dissipate heat generated by the LD chip, the conductive heat sink is electrically connected with one electrode of the electrode bonding pad to realize the effect of connecting the LD chip in parallel, conductive wires can be saved, and the volume of the LD light-emitting device is reduced.

In some embodiments of the first aspect of the present application, the heat sink is provided with a plurality of LD chips at intervals.

In some embodiments of the first aspect of the present application, the optical lens is provided with a solderable layer, and the optical lens and the thermally conductive dam are soldered by the solderable layer.

A second aspect of the present application provides a method for manufacturing the LD light-emitting device of the first aspect; the method comprises the following steps: arranging an annular weldable layer on the optical lens; and then welding the optical lens to the heat-conducting dam.

But set up the welding layer and can make being connected of optical lens and heat conduction box dam, the organic adhesive is replaced on the welding layer, effectively avoids the ageing of organic adhesive to lead to the encapsulation inefficacy.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.

Fig. 1 illustrates an exploded view of a light emitting device provided by an embodiment of the present application;

fig. 2 is a schematic structural diagram illustrating a first viewing angle of a light-emitting device provided by an embodiment of the present application;

fig. 3 is a schematic structural diagram illustrating a second viewing angle of a light-emitting device provided by an embodiment of the present application;

fig. 4 is a schematic view illustrating an internal structure of a light-emitting device according to an embodiment of the present disclosure;

fig. 5 shows a positional relationship of the heat sink, the LD chip, and the fluorescent layer in the embodiment of the present application;

FIG. 6 shows a schematic view of an optical lens provided by an embodiment of the present application;

fig. 7 shows a main flowchart of preparing an LD light-emitting device provided in an embodiment of the present application.

Icon: 100-a light emitting device; 110-electrode pads; 120-a substrate; 121-a line layer; 130-heat conducting dam; 140-LD chip; 150-conductive gold wire; 160-an optical lens; 161-weldable layer; 170-heat sink; 171-a top surface; 180-fluorescent layer.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.

In the description of the embodiments of the present application, it should be understood that the indicated orientations or positional relationships are based on the orientations or positional relationships shown in the drawings, or the orientations or positional relationships that the products of the application usually place when in use, or the orientations or positional relationships that the skilled person usually understands, are only for convenience of description and simplification of description, and do not indicate or imply that the indicated devices or elements must have a specific orientation, be constructed and operated in a specific orientation, and therefore, should not be construed as limiting the application.

In the description of the embodiments of the present application, it should also be noted that, unless otherwise explicitly stated or limited, the terms "disposed," "mounted," and "connected" are to be construed broadly, and may for example be fixedly connected, detachably connected, or integrally connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.

Fig. 1 illustrates an exploded view of a light emitting device 100 provided in an embodiment of the present application, and fig. 2 illustrates a schematic structural diagram of a first viewing angle of the light emitting device 100 provided in the embodiment of the present application; fig. 3 is a schematic structural diagram illustrating a second viewing angle of the light emitting device 100 according to the embodiment of the present application. Referring to fig. 1, fig. 2 and fig. 3 together, the present application provides a light emitting device 100, wherein the light emitting device 100 mainly functions to emit white light. In an embodiment of the present application, the light emitting device 100 includes an electrode pad 110, a substrate 120, a thermal conductive dam 130, an LD chip 140, a gold conductive wire 150, an optical lens 160, a heat sink 170, and a fluorescent layer 180.

The electrode pad 110 is formed on the substrate 120, the thermal conductive dam 130 is fixed on the substrate 120, the thermal conductive dam 130 is substantially an annular ring, the thermal conductive dam 130 and the substrate 120 together enclose a cavity, and the bottom wall of the cavity on the substrate 120 is provided with a circuit layer 121 (see fig. 3); the heat sink 170 and the fluorescent layer 180 are fixed on the substrate 120, and the heat sink 170 and the fluorescent layer 180 are located in a cavity surrounded by the heat conducting dam 130; an optical lens 160 is coupled to the thermally conductive dam 130 to enclose the cavity. The LD chip 140 is mounted on the heat sink 170, the conductive gold wire 150 passes through the circuit layer 121 to connect the electrode disposed on the electrode pad 110 and the LD chip 140, and the LD chip 140 is a laser diode capable of emitting blue light.

In an embodiment of the present application, the substrate 120 is made of aluminum nitride. The aluminum nitride has good thermal conductivity, and can rapidly dissipate heat of the heat sink 170 and the fluorescent layer 180. In other embodiments, the substrate 120 may be made of other heat conductive materials.

Accordingly, in other embodiments of the present application, the shape of the thermal conduction dam 130 may not be provided as an annular ring, and may be provided in other shapes as desired.

Fig. 4 is a schematic diagram illustrating an internal structure of a light emitting device 100 according to an embodiment of the present disclosure, please refer to fig. 2 and fig. 4. In the present embodiment, the light emitting device 100 includes four heat sinks 170, four LD chips 140, and four conductive gold wires 150; the four LD chips 140 are arranged in parallel.

In other embodiments of the present application, the light emitting device 100 may include only one heat sink 170, one LD chip 140, and one conductive gold wire 150; alternatively, the light emitting device 100 may be configured with two or more numbers of the heat sinks 170, two or more numbers of the LD chips 140, and a corresponding number of the conductive gold wires 150. In addition, the number relationship between the LD chips 140 and the heat sinks 170 is not only a one-to-one correspondence, and one or more LD chips 140 may be mounted on one heat sink 170; the light emitting device 100 may also be provided with a plurality of heat sinks 170, the LD chips 140 are mounted on some of the heat sinks 170 among the plurality of heat sinks 170, and the number of the LD chips 140 may be less than the number of the heat sinks 170. Accordingly, for an embodiment in which only one LD chip 140 is provided, the LD chip 140 no longer uses a parallel circuit.

Fig. 5 shows a positional relationship of the heat sink 170, the LD chip 140, and the fluorescent layer 180 in the embodiment of the present application; referring to fig. 4 and 5, in the present embodiment, the fluorescent layer 180 is a quadrilateral sheet, the fluorescent layer 180 is mounted on the substrate 120, the fluorescent layer 180 has a reflective surface and a backlight surface, the reflective surface and the backlight surface are oppositely disposed, the backlight surface of the fluorescent layer 180 is mounted on the substrate 120, and light emitted from the LD chip 140 irradiates the reflective surface of the fluorescent layer 180 and is converted by the fluorescent layer 180. The backlight surface of the fluorescent layer 180 is attached to the substrate 120, the heat of the fluorescent layer 180 can be transferred to the substrate 120 through the backlight surface, the direct contact area of the fluorescent layer 180 on the substrate 120 is large, the heat dissipation efficiency of the fluorescent layer 180 is increased, the heat of the fluorescent layer 180 can be quickly dissipated, the risk of thermal quenching of the fluorescent layer 180 is reduced, and the service life of the fluorescent layer is prolonged.

In the present embodiment, the fluorescent layer 180 is installed at the bottom wall of the ring cavity, and the fluorescent layer 180 is located at the center of the bottom wall of the ring cavity. The phosphor layer 180 may transfer heat to the substrate 120 for heat dissipation, thereby preventing the phosphor layer 180 from failing under the action of laser light. The four heat sinks 170 are disposed around the fluorescent layer 180 and spaced apart from the fluorescent layer 180. The LD chip 140 is mounted on the heat sink 170; and one LD chip 140 is mounted on each heat sink 170, and light emitted from the LD chip 140 can be irradiated to the fluorescent layer 180.

The primary function of the phosphor layer 180 is to convert at least a portion of the blue light impinging thereon into yellow-green light.

Illustratively, in the embodiments of the present application, the material of the fluorescent layer 180 has a molecular formula of Y₃Al₅O₁₂:xCe³ ⁺Wherein x is a number between 0 and 0.09, such as 0.001, 0.01, 0.03, 0.05 or 0.09. Y is₃Al₅O₁₂:xCe³⁺Can be prepared by including Al₂O₃、Y₂O₃、CeO₂The ceramic raw material powder and the sintering aid are prepared by sintering; the sintering aid comprises MgO and SiO₂At least one of (1). The sintering comprises vacuum sintering and annealing treatment which are sequentially carried out; the temperature of vacuum sintering is 1600-1900 ℃, the heat preservation time is 8-40 hours, and the vacuum degree is 10 < -3 > to 10 < -6 > Pa; the conditions of the annealing treatment are as follows: preserving heat for 5-30 hours at 1100-1600 ℃, and then cooling along with the furnace.

In other embodiments of the present application, the fluorescent layer 180 may also be made of other materials capable of converting blue light into yellow-green light, such as those commercially available; accordingly, in other embodiments of the present application, the shape of the fluorescent layer 180 may be a circular sheet or may be a spherical protrusion or the like, and the present application does not limit the shape of the fluorescent layer 180. In addition, the position of the fluorescent layer 180 on the bottom wall of the cavity is not limited to the center of the bottom wall of the cavity.

In the present embodiment, the side of the heat sink 170 away from the substrate 120 is the top surface 171; the LD chip 140 is mounted on the top surface 171, and the top surface 171 allows at least part of the light beams emitted from the LD chip 140 to irradiate the fluorescent layer 180. In other words, at least a portion of the light emitted from the LD chip 140 can be irradiated to the fluorescent layer 180 by the top surface 171. Since the LD chip 140 emits light from the end surface, the light-condensing property is good, and more light rays of the light emitted from the LD chip 140 reach the fluorescent layer 180; in addition, the light emitted from the LD chip 140 is blue light, the blue light is irradiated on the fluorescent layer 180, at least a portion of the blue light is converted into yellow-green light under the action of the fluorescent layer 180, and the yellow-green light and the unconverted blue light are mixed to form white light.

It should be noted that, in the embodiments of the present application, the color temperature of white light formed by mixing blue light and yellow-green light is not limited, in other words, the ratio of yellow-green light to blue light in white light is not limited.

Further, in the embodiment of the present application, the height of the top surface 171 of the heat sink 170 is gradually decreased in a direction approaching the fluorescent layer 180. The height of the top surface 171 refers to the distance of the top surface from the substrate 120. In other words, in the present embodiment, the top surface 171 extends in such a manner as to be inclined toward the fluorescent layer 180, so that the LD chip 140 mounted on the top surface 171 is inclined toward the fluorescent layer 180. In other words, the surface of the heat sink 170 away from the substrate 120 is an inclined surface, and the inclined surface is inclined toward the fluorescent layer 180. The light emitted from the LD chip 140 may irradiate the fluorescent layer 180 with more light.

in some embodiments of the present application, the surface of the fluorescent layer 180 is taken as a reference surface, and the inclination angle of the top surface 171 is 0 ° to 90 °, in other words, the included angle between the top surface 171 and the light reflecting surface of the fluorescent layer 180 (e.g., the angle α in fig. 5) is 0 ° to 90 °, as an example, the included angle between the surface of the top surface 171 and the plane of the fluorescent layer 180 (e.g., the angle α in fig. 5) may be 1 °, 2 °, 10 °, 15 °, 16 °, 18 °, 20 °, 24 °, 25 °, 30 °, 45 °, 60 °, 89 °, or 90 °. α is 0 ° to 90 °, so that the light emitted from the LD chip 140 can be irradiated to the light reflecting surface of the fluorescent layer 180.

further, in some embodiments of the present disclosure, an included angle (e.g., angle α in fig. 5) between the top surface 171 of the heat sink 170 and a plane where a reflective surface of the fluorescent layer 180 is located is 15 to 25 °, in embodiments where α is 15 to 25 °, light emitted from the LD chip 140 irradiates the reflective surface of the fluorescent layer 180, is reflected by the reflective surface, and then is emitted through the optical lens 160, an incident angle of the light emitted from the LD chip 140 mounted on the top surface 171 of the heat sink 170 is approximately 90 ° -angle α, in embodiments where α is 15 to 25 °, an incident angle of the light emitted from the LD chip 140 is approximately 65 to 25 °, the area of the fluorescent layer 180 irradiated by the light emitted from the LD chip 140 is wider, and the conversion rate of the light is better.

Accordingly, a predetermined distance is provided between the fluorescent layer 180 and the heat sink 170, and when an included angle between the top surface 171 and the reflective surface of the fluorescent layer 180 is 0 ° to 90 °, the light emitted from the LD chip 140 may be irradiated to the reflective surface. The predetermined distance is determined according to the thickness of the fluorescent layer 180 and the height of the heat sink 170.

It should be noted that, in other embodiments of the present application, when the distance between the heat sink 170 and the fluorescent layer 180 is not within the preset distance range, the included angle between the top surface 171 and the reflective surface of the fluorescent layer 180 may be other values, and the light emitted by the LD chip 140 may be irradiated to the reflective surface.

Illustratively, in the present embodiment, the heat sink 170 is substantially a quadrangular prism, and an inclined slope is formed on a top surface 171 of an upper end of the quadrangular prism, a side of the heat sink 170 opposite to the inclined slope is connected to the substrate 120, and the inclined slope of the heat sink 170 is installed toward the fluorescent layer 180. The inclined angle of the inclined plane is 15-25 degrees. It is understood that the top surface of the upper end of the heat sink 170 may be formed by splicing an inclined plane and a non-inclined plane. In other embodiments of the present application, the heat sink 170 may have other shapes, such as a hemisphere with a sloped top surface or a semi-ellipsoid with a sloped top surface, and so on.

Accordingly, the top surface 171 of the heat sink 170 may not be inclined, and it is only necessary that the top surface 171 can irradiate the fluorescent layer 180 with light emitted from the LD chip 140 mounted thereon.

In other embodiments of the present application, the light-reflecting surface of the fluorescent layer 180 may be a curved surface, and for embodiments in which the light-reflecting surface of the fluorescent layer 180 is a curved surface, the included angle between the top surface 171 and the plane of the substrate 120 may be 155 ° to 165 °.

Further, in other embodiments of the present application, the LD chip 140 is mounted on the top surface 171, so that the center point of the light emitted from the LD chip 140 is irradiated to the center point of the surface of the fluorescent layer 180. More of the blue light can be converted to yellow-green light.

In the embodiment of the present application, four heat sinks 170 are each provided with an inclined top surface 171, and the four heat sinks 170 are arranged in an array along the periphery of the fluorescent layer 180. The four heat sinks 170 are uniformly disposed around the fluorescent layer 180, which is beneficial for the light emitted from each LD chip 140 to be more irradiated on the fluorescent layer 180, and in addition, the heat sinks 170 and the heat conduction dam 130 can better dissipate the heat generated by the LD chips 140. In other embodiments of the present application, the spacing distance between two adjacent heat sinks 170 may not be the same.

In this embodiment, the heat sink 170 is made of a heat conductive material capable of conducting electricity, for example, in this embodiment, the heat sink 170 is made of a copper substrate plated with gold, and in other embodiments, the heat sink can be made of other heat conductive and electricity conductive materials, such as metal, alloy, and the like. The conductive heat-conducting material can dissipate heat generated by the LD chip 140, and the conductive heat sink 170 is electrically connected to one electrode of the electrode pad 110 to realize the function of connecting the LD chip 140 in parallel, so that conductive wires can be saved; in other embodiments of the present application, the heat sink 170 may also be a thermally conductive material that is not electrically conductive, and the LD chip 140 and the electrode may be connected by a conductive wire.

As described above, the LD light-emitting device 100 may include one, two, or more heat sinks 170; each heat sink 170 may be mounted with one or more LD chips 140, and light emitted from each LD chip 140 disposed on the top surface 171 may be irradiated to the fluorescent layer 180.

In addition, for the embodiment that the LD light emitting device 100 includes two or more heat sinks 170, the heat sinks 170 are disposed at intervals from the fluorescent layer 180, and a space is reserved between the heat sinks 170 and the fluorescent layer 180 for disposing the circuit layer 121; for embodiments in which only one heat sink 170 is provided for the LD light emitting device 100, the heat sink 170 and the fluorescent layer 180 may not reserve a space; in other words, for the LD light-emitting device 100 provided with only one heat sink 170; the heat sink 170 may be in contact with an end surface of the fluorescent layer 180.

As mentioned above, the heat sink 170 and the fluorescent layer 180 are both located in the cavity surrounded by the heat conducting dam 130; in this embodiment, the heat sink 170 is connected to the thermally conductive dam 130; in other words, the heat sink 170 is coupled to both the substrate 120 and the thermally conductive dam 130. One end of the heat sink 170 is connected to the heat conducting dam 130, and part of the heat sink 170 can be diffused through the heat conducting dam 130 to increase the heat dissipation effect of the LD light emitting device 100.

In the present embodiment, the heat sink 170 is integrally provided with the thermally conductive dam 130; the heat sink 170 and the thermally conductive dam 130 are both made of an electrically and thermally conductive material. It should be noted that in other embodiments of the present application, the heat sink 170 may not be connected to the heat conducting dam 130, and the two are independently disposed and spaced apart from each other.

Fig. 6 shows a schematic diagram of an optical lens 160 provided in the present embodiment, please refer to fig. 6 and fig. 1, and as mentioned above, the LD light-emitting device 100 further includes the optical lens 160, in the present embodiment, the optical lens 160 is provided with a solderable layer, and the optical lens 160 and the thermal conduction dam 130 are soldered by the solderable layer 161.

In the present embodiment, the optical lens 160 is made of a light-permeable material, such as a light-permeable resin, the optical lens 160 is a hemispherical shell, one end of the optical lens 160 close to the heat-conducting dam 130 is provided with a weldable layer 161, and the optical lens 160 is welded to the heat-conducting dam 130 through the weldable layer 161. The optical lens 160 and the heat conducting dam 130 are connected by adopting the weldable layer, and the weldable layer 161 replaces organic adhesives, so that the packaging failure caused by the aging of the organic adhesives is effectively avoided.

The main advantages of the LD light emitting device 100 provided by the embodiment of the present application are:

the LD light emitting device 100 mounts the fluorescent layer 180 on the substrate 120, heat of the fluorescent layer 180 may be dissipated through the substrate 120, the LD chip 140 is mounted on the top surface 171, the LD chip 140 may not directly contact the fluorescent layer 180, a portion of light emitted from the LD chip 140 mounted on the top surface 171 is converted by the fluorescent layer 180, and the unconverted portion and the converted portion are combined into white light; the LD chip 140 is spaced apart from the fluorescent layer 180, and only a portion of heat generated from the LD chip 140 is transferred to the fluorescent layer 180, thereby reducing heat of the fluorescent layer 180. The heat dissipation problem generated when the LD light-emitting device 100 works is solved, the multi-LD chip 140 can be integrally packaged, the thermal quenching failure of the fluorescent layer 180 is prevented, and the white light conversion efficiency of the fluorescent layer 180 is improved; further improving the stability of the long-term operation of the LD light emitting device 100 and improving the problems of light decay and color drift caused by the failure of the fluorescent layer 180.

As an example, the present embodiment also provides a method of manufacturing the above-described LD light-emitting device 100.

Fig. 7 shows a main flowchart of preparing the LD light-emitting device 100 provided in the embodiment of the present application.

Referring to fig. 1 to 7, the main method for manufacturing the LD light emitting device 100 includes:

a thermal conductive dam 130 and a wiring layer 121 are disposed on the substrate 120.

A heat sink 170 having a sloped top surface 171 is disposed on the substrate 120.

The LD chip 140 is soldered on the inclined top surface 171 by means of eutectic soldering. The LD chip 140 and the electrodes are connected and soldered using a conductive gold wire 150.

The fluorescent layer 180 is disposed on the substrate 120. In detail, in the present application, the fluorescent layer 180 is formed by firing a fluorescent material to obtain a fluorescent material sheet, and then a fluorescent ceramic solderable layer is plated on the fluorescent material sheet to obtain the fluorescent layer 180, and then the fluorescent layer 180 is disposed on the substrate 120.

A solderable layer 161 is disposed on the optical lens 160 to solder the optical lens 160 to the thermal dam 130.

It should be noted that, in the embodiment of the present application, the steps of disposing the fluorescent layer 180 on the substrate 120 and disposing the heat sink 170 on the substrate 120 are not sequential. In addition, the step of providing the solderable layer 161 on the optical lens 160 is not preceded by the other steps.

In other embodiments of the present application, the LD light-emitting device 100 may also be prepared by other methods.

The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. An LD light-emitting device, characterized in that it comprises:

a substrate;

the fluorescent layer comprises a backlight surface and a light reflecting surface which are opposite, and the backlight surface is attached to the substrate;

a heat sink mounted to the substrate;

the LD chip is arranged on the heat sink, and at least part of light beams emitted by the LD chip can irradiate the light reflecting surface; and

and the optical lens is connected with the substrate and forms a cavity for accommodating the fluorescent layer, the heat sink and the LD chip.

2. The LD light-emitting device according to claim 1,

the LD light-emitting device comprises a plurality of the heat sinks and a plurality of the LD chips; the heat sinks are all arranged on the substrate and are arranged at intervals along the periphery of the fluorescent layer; each heat sink is provided with at least one LD chip; at least part of light beams emitted by each LD chip can irradiate the light reflecting surface;

optionally, a plurality of the heat sinks are arranged in an array along the periphery of the fluorescent layer.

3. The LD light-emitting device according to claim 1 or 2,

the LD chip is arranged on the top surface of the heat sink, and the height of the top surface of the heat sink is gradually reduced along the direction close to the fluorescent layer, so that the light emitting direction of the LD chip points to the reflecting surface.

4. The LD light-emitting device according to claim 3, characterized in that the top surface of the heat sink and the plane of the light-reflecting surface form an angle of 0-90 °;

5. The LD light-emitting device according to claim 1 or 2, wherein the LD chip is mounted on the heat sink such that a center point of light emitted from the LD chip is irradiated to a center point of the light-reflecting surface.

6. The LD light-emitting device according to claim 1 or 2,

the LD light-emitting device also comprises a heat-conducting dam, and the optical lens is connected with the heat-conducting dam; the heat sink is connected with the substrate and connected with the inner wall of the heat-conducting dam;

optionally, the heat sink is integrally provided with the thermally conductive dam.

7. The LD light-emitting device according to claim 6, characterized in that,

the heat conduction box dam and the heat sink are both made of conductive materials.

8. The LD light emitting device according to claim 6, wherein the optical lens is provided with a solderable layer, and the optical lens and the heat conductive dam are soldered through the solderable layer.

9. The LD light emitting device according to claim 1 or 2, wherein the heat sink is mounted with a plurality of the LD chips arranged at intervals.

10. A method for manufacturing an LD light-emitting device according to any one of claims 1 to 9, comprising:

arranging an annular weldable layer on the optical lens; and then welding the optical lens to the heat-conducting dam.