CN111180611A - Thin film packaging method and thin film packaging structure prepared by same - Google Patents
Thin film packaging method and thin film packaging structure prepared by same Download PDFInfo
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- CN111180611A CN111180611A CN201910116491.9A CN201910116491A CN111180611A CN 111180611 A CN111180611 A CN 111180611A CN 201910116491 A CN201910116491 A CN 201910116491A CN 111180611 A CN111180611 A CN 111180611A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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Abstract
The invention relates to a film packaging method and a film packaging structure prepared by the same, wherein the film packaging method comprises the following steps: forming a first inorganic barrier layer on a device to be encapsulated; depositing an organic silicon polymer precursor on the first inorganic barrier layer, and curing to form an organic planarization layer; and placing the organic planarization layer under vacuum ultraviolet to perform decomposition reaction on the surface of the organic planarization layer so as to form a second inorganic barrier layer on the surface of the organic planarization layer. The film packaging method effectively reduces the number of processes and equipment required by film packaging, thereby improving the production efficiency and reducing the manufacturing cost of the display panel.
Description
Technical Field
The invention relates to the technical field of electronic devices, in particular to a thin film packaging method and a thin film packaging structure prepared by the same.
Background
Thin Film Encapsulation (TFE) is an encapsulation technology suitable for narrow bezel and flexible OLED panels, and a typical thin film encapsulation structure consists of overlapping repetitions of inorganic material layers and organic material layers. A typical thin film encapsulation part includes, from bottom to top: a first inorganic barrier layer, an organic planarization layer, and a second inorganic barrier layer.
A process flow (process flow) required for preparing the thin film encapsulation structure of the above structure is shown in fig. 1. Since the first inorganic barrier layer and the second inorganic barrier layer both require chemical vapor deposition equipment for coating, generally, as shown in a in fig. 1, two chemical vapor deposition equipments are required for coating the first inorganic barrier layer and the second inorganic barrier layer before and after the coating of the organic planarization layer, that is, the chemical vapor deposition equipment 1 and the chemical vapor deposition equipment 2 in a, which not only increases the equipment cost, but also makes the layout of the production line longer. Although the method shown in b of fig. 1 can also be used to prepare the first inorganic barrier layer and the second inorganic barrier layer by using a cvd apparatus, that is, a cvd apparatus that performs a chemical vapor deposition process on the second inorganic barrier layer after completing the organic planarization layer and then transferring the substrate back to the first inorganic barrier layer, this may prolong tact time (tact time) to affect production efficiency, resulting in reduced productivity, and complicated substrate transfer, increased requirements for the transfer apparatus, and increased possibility of failure.
Disclosure of Invention
Accordingly, there is a need for a film packaging method and a film packaging structure manufactured by the same, which have a simple manufacturing process while ensuring a good packaging effect.
A thin film encapsulation method, comprising the steps of:
forming a first inorganic barrier layer on a device to be encapsulated;
depositing an organic silicon polymer precursor on the first inorganic barrier layer, and curing to form an organic planarization layer;
and placing the organic planarization layer under vacuum ultraviolet, and carrying out decomposition reaction on the surface of the organic planarization layer to form a second inorganic barrier layer on the surface of the organic planarization layer.
In one embodiment, the organic silicon polymer precursor is deposited on the first inorganic barrier layer and cured to form an organic planarization layer, which includes the following steps:
preparing an organic silicon polymer precursor solution;
and depositing the organic silicon polymer precursor solution on the first inorganic barrier layer and then carrying out ultraviolet curing to form the organic planarization layer.
In one embodiment, the solvent used in the step of preparing the silicone polymer precursor solution is one or more of toluene, xylene and isopropanol.
In one embodiment, the conditions of the uv curing are: the wavelength is 230nm-280nm, and the time is 60s-100 s.
In one embodiment, the organic planarization layer formed after the UV curing has a thickness of 4 μm to 8 μm.
In one embodiment, the silicone polymer precursor is dimethylsiloxane.
In one embodiment, the conditions for performing the decomposition reaction under vacuum ultraviolet are as follows: the wavelength is 150nm-200nm, the vacuum degree is 2torr-5torr, and the time is 300s-600 s.
In one embodiment, the wavelength of the vacuum ultraviolet used to perform the decomposition reaction is 172 nm.
The thin film packaging structure prepared by the thin film packaging method.
An electronic device comprises the film packaging structure prepared by the film packaging method.
According to the film packaging method, the organic layer formed after the organic silicon polymer is cured is used as the organic planarization layer for film packaging, and the organic planarization layer can be subjected to decomposition reaction under vacuum ultraviolet, so that a compact and defect-free silicon oxide film layer can be directly formed on the surface of the organic planarization layer for film packaging to serve as an inorganic barrier layer. Therefore, the film packaging method does not need to convert an instrument or move the substrate, only needs to convert the test condition in one device, and effectively reduces the number of processes and devices required by film packaging, thereby improving the production efficiency and reducing the manufacturing cost of the display panel.
Drawings
FIG. 1 is a flow chart of a conventional thin film encapsulation method;
FIG. 2 is a flow chart of a thin film encapsulation method according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a possible decomposition reaction route of organosilicon polymer under vacuum ultraviolet irradiation;
in FIG. 4, a is Si on the surface of PDMS before vacuum UV irradiation when PDMS is used2pXPS high resolution spectra of (a); b is Si on the surface of PDMS after vacuum ultraviolet irradiation when PDMS is adopted2pXPS high resolution spectra of (a);
fig. 5 is a simplified schematic diagram of an apparatus used in the thin film encapsulation method shown in fig. 2.
Detailed Description
In order that the invention may be more fully understood, a more particular description of the invention will now be rendered by reference to specific embodiments thereof that are illustrated in the appended drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
The film encapsulation method according to an embodiment of the present invention may be applied to panel encapsulation, particularly, a flexible panel, and is not particularly limited herein. As shown in fig. 2, the thin film encapsulation method includes the following steps:
s101: as shown in fig. 2 a, a first inorganic barrier layer 201 is formed on the device 100 to be encapsulated.
The first inorganic barrier layer 201 is a water-oxygen barrier layer, is mainly used for blocking water and oxygen, has the characteristics of uniformity, compactness, strong water-oxygen blocking capability and the like, can completely cover the surface of the OLED layer waiting for the packaging device 100, and effectively prevents the degradation of the OLED layer due to the influence of water and oxygen permeation. A layer of 0.8 μm to 1.5 μm of a silicon-containing compound, which may be silicon oxide or silicon nitride, may be deposited as the first inorganic barrier layer 201 using a Plasma Enhanced Chemical Vapor Deposition (PECVD), wherein silicon nitride may be generated by reacting silane with ammonia gas, and silicon oxide may be generated by reacting silane with nitrous oxide.
In one embodiment, the first inorganic barrier layer 201 is formed on the device 100 to be packaged by plasma enhanced chemical vapor deposition at a temperature of 70-110 ℃ and a vacuum of 0.5-3 torr.
S102: as shown in fig. 2 b, an organic silicon polymer precursor is deposited on the first inorganic barrier layer 201 and cured to form an organic planarization layer 202.
The curing method is not particularly limited, and may be light curing, temperature-controlled curing, or the like. In one embodiment, the organic planarization layer is formed by an ultraviolet curing method, so that the ultraviolet wavelength is adjusted only by matching with the subsequent vacuum ultraviolet decomposition, the number of instruments can be reduced, and the industrial production is simplified. In another embodiment, the UV curing is carried out at a wavelength of 230nm to 280nm for a period of 60s to 100 s.
The organic planarization layer 202 mainly plays a role in planarization, can cover defects on the surface of the inorganic layer, eliminate residual stress, and prolong the permeation path of water and oxygen, thereby further enhancing the water and oxygen barrier capability of the thin film packaging structure.
The organic silicon polymer precursor is a substance capable of generating a silicon-containing polymer through a polymerization reaction, and may include a prepolymer and a curing agent, and the precursor substance is capable of generating a silicon-containing polymer through a curing reaction and generating silicon oxide through a decomposition reaction under vacuum ultraviolet. For example: the organic silicon polymer is Polydimethylsiloxane (PDMS), and the precursor thereof can be: the Sylgard 184 two-component silicone rubber is mixed according to the mass ratio of prepolymer to curing agent of 10: 1.
Because of the high viscosity of the PDMS precursor, it is preferably dissolved in toluene, xylene or isopropanol at a concentration of 10% to 15% before inkjet printing and then deposited directly onto the first inorganic barrier layer 201 by inkjet printing. And after printing, standing the substrate at 60-80 ℃ for 180-300 s, so that the solvent in the PDMS precursor is completely evaporated, and the PMDS precursor is leveled under the action of gravity to form a flat and smooth upper surface. Finally, the PDMS surface is irradiated by 254nm ultraviolet light for 60s-100s to be polymerized and cured, so that the organic planarization layer 202 is formed.
S103: as shown in c of fig. 2, the organic planarization layer 202 is exposed to vacuum ultraviolet, and the surface of the organic planarization layer 202 is decomposed to form a second inorganic barrier layer 203 on the surface of the organic planarization layer 202, thereby fabricating the thin film encapsulation structure 200.
Because the organic silicon polymer is subjected to decomposition reaction under vacuum ultraviolet to generate silicon oxide which can be used as the second inorganic barrier layer 203, two chemical vapor deposition devices are not needed, and the substrate after the organic planarization layer is finished is not needed to be returned to the chemical vapor deposition devices for film coating, so that the process flow is simplified, and the production efficiency is improved.
The vacuum ultraviolet refers to ultraviolet with the wavelength of 150nm-200nm, which is strongly absorbed by oxygen in air and can only be applied to vacuum. The organosilicon polymer precursor can generate polymerization reaction under the irradiation of ultraviolet light, the wavelength is continuously reduced to reach the range of vacuum ultraviolet, and the energy is increased to generate decomposition reaction. Specifically, as shown in fig. 3, under the irradiation of vacuum ultraviolet, the organic substance on the surface of the organic silicon polymer is decomposed to generate carboxyl and hydroxyl, and a large amount of Si — OH is obtained under the action of ultraviolet, and since the Si — OH undergoes dehydration reaction, the main CH in the organic silicon polymer is generated3the-Si-O-structure is converted into a network structure of-O-Si-O-, and SiO is formedx(1<x<2) I.e. a thin layer structure of silicon oxide, thereby forming a dense defect-free inorganic barrier layer (silicon oxide).
In addition, FIG. 4 shows Si on the surface of PDMS before and after UV irradiation when PDMS is used2pXPS high resolution spectra of (1). As can be seen from FIG. 4, before and after UV irradiation, the Si element on the surface of PDMS is SiO2And
the two forms exist but in different amounts, before irradiation
The Si element is present in a form with a high content (as shown in a in FIG. 4), and SiO is formed after ultraviolet irradiation2The Si element is present in a higher form (as shown by b in fig. 4). Thereby proving that the Si element on the surface of PDMS is partially converted into SiO after being irradiated by ultraviolet light2The form exists.
In addition, the inventor researches and discovers that: the thickness of the second inorganic barrier layer 203 is related to the vacuum ultraviolet and the irradiation time thereof, and the thickness of the second inorganic barrier layer 203 formed at 300s under the vacuum ultraviolet of 172nm is about 400nm, and the thickness thereof is about 600nm at 600 s. And the second inorganic barrier layer 203 formed under the condition is flatly and flawlessly covered on the surface of the organic planarization layer 202, and also has strong water and oxygen barrier capability. Furthermore, the inventors have found that the use of air plasma also has a similar effect, but the SiO it producesxIs thinner, generally below 20nm, and is much smaller than SiO generated under vacuum ultravioletxAnd thus its barrier capability is weak (400-600 nm).
In one embodiment, the conditions for carrying out the decomposition reaction under vacuum ultraviolet are: the wavelength is 150nm-200nm, the vacuum degree is 2torr-5torr, and the time is 300s-600 s. This condition enables the formation of an inorganic barrier layer having a suitable thickness and being dense and free of defects.
In another embodiment, the second inorganic barrier layer 203 is formed by performing a decomposition reaction under a vacuum ultraviolet wavelength of 172 nm. Xenon excimer ultraviolet lamp illumination may be used to provide ultraviolet light at a wavelength of 172 nm.
As shown in fig. 5, step S103 can be performed in the ultraviolet curing apparatus of step S102, and only the ultraviolet wavelength and the vacuum degree need to be adjusted, and there is no need to convert the apparatus, and there is no need to move the substrate, so the above method simplifies the process flow and improves the production efficiency.
The above is merely an example, and the number of the inorganic barrier layer and the organic planarizing layer in the present invention is not particularly limited, and may be adjusted as necessary, and they can be produced by any of the above methods. For example: a second organic planarization layer may be formed on the second inorganic barrier layer by the same method as in step S102, and a third inorganic barrier layer may be formed by the same method as in step S103, and so on, so that a plurality of thin film layers may be formed to meet various requirements.
The film packaging structure of another embodiment of the present invention is prepared by the above film packaging method, and the specific steps and conditions are the same as those of the above method, and are not described herein again.
The electronic device of another embodiment of the present invention includes the thin film encapsulation structure prepared by the above encapsulation method, and the specific steps and conditions are the same as those of the above method, and are not described herein again.
According to the film packaging method and the film packaging structure 200 prepared by the method, a compact and defect-free surface inorganic barrier layer is directly formed on the surface of the organic planarization layer 202 through decomposition reaction and is used as the second inorganic barrier layer 203, so that the packaging effect is improved.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A method of thin film encapsulation, comprising the steps of:
forming a first inorganic barrier layer on a device to be encapsulated;
depositing an organic silicon polymer precursor on the first inorganic barrier layer, and curing to form an organic planarization layer;
and placing the organic planarization layer under vacuum ultraviolet, and carrying out decomposition reaction on the surface of the organic planarization layer to form a second inorganic barrier layer on the surface of the organic planarization layer.
2. The thin film encapsulation method according to claim 1, wherein a silicone polymer precursor is deposited on the first inorganic barrier layer and cured to form an organic planarization layer, and the step of forming the organic planarization layer comprises the steps of:
preparing an organic silicon polymer precursor solution;
and depositing the organic silicon polymer precursor solution on the first inorganic barrier layer and then carrying out ultraviolet curing to form the organic planarization layer.
3. The film encapsulation method according to claim 2, wherein the solvent used in the step of preparing the silicone polymer precursor solution is one or more of toluene, xylene, and isopropyl alcohol.
4. The film encapsulation method according to claim 3, wherein the ultraviolet curing conditions are: the wavelength is 230nm-280nm, and the time is 60s-100 s.
5. The thin film encapsulation method according to claim 2, wherein the organic planarization layer formed after the uv curing has a thickness of 4 μm to 8 μm.
6. The thin film encapsulation method according to any one of claims 1 to 5, wherein the silicone polymer precursor is dimethylsiloxane.
7. The thin film encapsulation method according to any one of claims 1 to 5, wherein the conditions for performing the decomposition reaction under vacuum ultraviolet are: the wavelength is 150nm-200nm, the vacuum degree is 2torr-5torr, and the time is 300s-600 s.
8. The film sealing method according to claim 7, wherein the wavelength of vacuum ultraviolet used for performing the decomposition reaction is 172 nm.
9. A thin film encapsulation structure prepared by the thin film encapsulation method of any one of claims 1 to 8.
10. An electronic device comprising the thin film encapsulation structure prepared by the thin film encapsulation method according to any one of claims 1 to 8.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111785684A (en) * | 2020-06-19 | 2020-10-16 | 安徽熙泰智能科技有限公司 | Preparation method of integrated thin film structure suitable for Micro OLED display |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160013444A1 (en) * | 2013-09-17 | 2016-01-14 | Boe Technology Group Co., Ltd. | Organic electroluminescent device packaging structure |
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- 2019-02-15 CN CN201910116491.9A patent/CN111180611A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160013444A1 (en) * | 2013-09-17 | 2016-01-14 | Boe Technology Group Co., Ltd. | Organic electroluminescent device packaging structure |
Non-Patent Citations (1)
| Title |
|---|
| LINA SUN, ET AL.: "Solution processing of alternating PDMS/SiOx multilayer for encapsulation of organic light emitting diodes", 《ORGANIC ELECTRONICS》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111785684A (en) * | 2020-06-19 | 2020-10-16 | 安徽熙泰智能科技有限公司 | Preparation method of integrated thin film structure suitable for Micro OLED display |
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Application publication date: 20200519 |