CN111171629A - Ink and preparation method thereof - Google Patents
Ink and preparation method thereof Download PDFInfo
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- CN111171629A CN111171629A CN201910179011.3A CN201910179011A CN111171629A CN 111171629 A CN111171629 A CN 111171629A CN 201910179011 A CN201910179011 A CN 201910179011A CN 111171629 A CN111171629 A CN 111171629A
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- hole injection
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/30—Inkjet printing inks
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/30—Inkjet printing inks
- C09D11/36—Inkjet printing inks based on non-aqueous solvents
Abstract
The invention relates to ink and a preparation method thereof, comprising a hole injection material and a main solvent; the hole injection material is selected from one or more of HAT-CN, F4-TCNQ and F6-TCNNQ; the main solvent is one or more selected from N, N-dimethylacetamide, N-dimethylformamide, N-methylpyrrolidone, cyclohexanone, sulfolane, 1,4 dioxane and dimethyl sulfoxide. The above-mentioned main solvent has good solubility for the hole injection materials HAT-CN, F4TCNQ, F6TCNNQ, and the hole injection material for vapor deposition is successfully used in solution processing. The ink has good film forming property, can not be dissolved by the solvent of the ink of a subsequent light-emitting layer or a hole transport layer after film forming, and has good film forming stability.
Description
Technical Field
The invention relates to the technical field of organic electroluminescence, in particular to ink and a preparation method thereof.
Background
The solution processing method for preparing the organic electroluminescent OLED device has the advantages of low cost and capability of realizing large-area processing. PSS is a material of a hole injection layer which is widely adopted at present, has good conductivity and has good effect in many devices. PSS-based hole injection layer ink has certain defects, is relatively strong in acidity, is not suitable for long-term device stability, and can corrode equipment to a certain extent; secondly, the ink also has a quenching effect on excitons, so that the hole injection layer ink with good stability has a great effect on the service life of the device.
In the evaporation technology, common hole injection materials HAT-CN, F4TCNQ and F6TCNNQ have good hole injection performance, particularly HAT-CN, and the application is wider. HAT-CN, however, has very poor solubility in toluene, chlorobenzene, xylene, dichloroethane, tetrahydrofuran, and is not suitable for solution processing.
Disclosure of Invention
Based on this, the present invention provides an ink and a method for preparing the same, which successfully uses a hole injection material for vapor deposition in solution processing.
An ink comprising a hole injecting material and a main solvent;
the hole injection material is selected from one or more of HAT-CN, F4-TCNQ and F6-TCNNQ;
the main solvent is one or more selected from N, N-dimethylacetamide, N-dimethylformamide, N-methylpyrrolidone, cyclohexanone, sulfolane, 1,4 dioxane and dimethyl sulfoxide.
The ink has good film forming property, can not be dissolved by a solvent of the subsequent luminescent layer or hole transport layer ink after film forming, and has good film forming stability.
Detailed Description
The present invention may be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
An ink comprising a hole injecting material and a main solvent;
the hole injection material is selected from one or more of HAT-CN, F4-TCNQ and F6-TCNNQ;
the main solvent is one or more selected from N, N-dimethylacetamide, N-dimethylformamide, N-methylpyrrolidone, cyclohexanone, sulfolane, 1,4 dioxane and dimethyl sulfoxide.
In the research process, the applicant finds that the solvents N, N-dimethylacetamide, N-dimethylformamide, N-methylpyrrolidone, cyclohexanone, sulfolane, 1,4 dioxane and dimethyl sulfoxide have good solubility on hole injection materials HAT-CN, F4TCNQ and F6TCNNQ, so that a novel ink suitable for ink-jet printing of a hole injection layer is developed, and the hole injection material for evaporation is successfully used in solution processing. The ink has good film forming property, is not easily dissolved by a solvent of the ink of a subsequent light-emitting layer or a hole transport layer after film forming, and has good film forming stability.
The structures of the hole injection materials HAT-CN, F4-TCNQ and F6-TCNNQ are as follows:
preferably, the mass-to-volume ratio of the hole injection material to the main solvent is 10 mg: (0.1-5) mL.
Further, the ink also comprises a second organic solvent, wherein the second organic solvent is one or more selected from triethylene glycol, diethylene glycol, pentanediol and triethylene glycol dimethyl ether.
Further, the ink also comprises a third organic solvent, wherein the third organic solvent is one or more selected from diethylene glycol dimethyl ether, diethylene glycol isobutyl ether, dipropylene glycol monomethyl ether, tetraethylene glycol dimethyl ether, methyl benzoate and anisole.
Further research shows that after the second organic solvent with higher viscosity and lower boiling point than the main solvent and the third organic solvent with higher surface tension and lower boiling point than the main solvent are added into the ink system, the viscosity and the surface tension of the ink system can be adjusted, the ink system is more suitable for ink-jet printing, and the selected second organic solvent and the selected third organic solvent can well dissolve the hole injection material, so that the stability of film formation of the hole injection layer is improved.
Preferably, the mass-to-volume ratio of the hole injection material to the main solvent, the second organic solvent, and the third organic solvent is: 10 mg: (0.5-2) mL: (0.05-1) mL: (0.03-1) mL.
Further preferably, the mass-to-volume ratio of the hole injection material to the main solvent, the second organic solvent, and the third organic solvent is: 10 mg: (0.5-1.5) mL: (0.1-0.5) mL: (0.1-0.5) mL.
The viscosity of the ink at 25 ℃ is 3cP to 15cP, and the surface tension is 30 to 42 dynes/cm.
A method of making an ink comprising the steps of:
and dispersing the hole injection material in a main solvent, and dissolving to obtain the hole injection material.
The hole injection material is selected from one or more of HAT-CN, F4-TCNQ and F6-TCNNQ;
the main solvent is one or more selected from N, N-dimethylacetamide, N-dimethylformamide, N-methylpyrrolidone, cyclohexanone, sulfolane, 1,4 dioxane and dimethyl sulfoxide.
Preferably, the dissolution rate of the hole injection material in the main solvent is increased by heating, and the heating temperature is preferably 150 ℃.
In a preferred embodiment, a method of preparing an ink comprises the steps of:
and dispersing the hole injection material in the main solvent, dissolving, adding a second organic solvent, and stirring to obtain the hole injection material.
The second organic solvent is selected from one or more of triethylene glycol, diethylene glycol, pentanediol and triethylene glycol dimethyl ether.
In a preferred embodiment, a method of preparing an ink comprises the steps of:
and dispersing the hole injection material in the main solvent, dissolving, adding the second organic solvent, stirring, adding the third organic solvent, and stirring to obtain the hole injection material.
The third organic solvent is one or more selected from diethylene glycol dimethyl ether, diethylene glycol monoisobutyl ether, dipropylene glycol monomethyl ether, tetraethylene glycol dimethyl ether, methyl benzoate and anisole.
The ink and the method for preparing the same according to the present invention will be described in further detail with reference to specific examples.
Example 1
An ink, its preparation method is as follows:
10mg of HAT-CN hole injection material was dispersed in 1ml of N, N-dimethylacetamide with stirring and dissolved by heating at 80 ℃ to give a clear, bright yellow solution A.
Under the condition of stirring, 0.5mL of triethylene glycol dimethyl ether is added into the solution A to obtain solution B.
And under the condition of stirring, adding 0.3mL of anisole into the solution B to obtain a solution C, namely the ink.
The electron ink for the hole injection layer had a viscosity of 3.5cp (25 ℃ C.) and a surface tension of 34.3dynes/cm (25 ℃ C.).
Example 2
An ink, its preparation method is as follows:
10mg of HAT-CN hole injection material was dispersed in 1ml of sulfolane while stirring, and dissolved by heating at 80 ℃ to obtain solution A.
Under the stirring condition, 0.1mL of diethylene glycol was added to the solution A to obtain solution B.
Under the condition of stirring, 0.3mL of tetraethylene glycol dimethyl ether is added into the solution B to obtain solution C, namely the ink.
The viscosity of the quantum dot electronic ink is 8cp (25 ℃), and the surface tension is 35.4dynes/cm (25 ℃).
Example 3
An ink, its preparation method is as follows:
10mg of F6-TCNNQ hole injection material was dispersed in 1ml of dimethyl sulfoxide with stirring, and dissolved by heating at 80 ℃ to obtain solution A.
While stirring, 0.5mL of pentanediol was added to solution A to obtain solution B.
Under the condition of stirring, 0.3mL of diethylene glycol monoisobutyl ether is added into the solution B to obtain a solution C, namely the ink.
The viscosity of the quantum dot electronic ink is 12cp (25 ℃), and the surface tension is 42.3dynes/cm (25 ℃).
Example 4
An OLED device is prepared by the following steps:
firstly, the ITO substrate is cleaned according to the following sequence: 5% KOH solution is subjected to ultrasonic treatment for 15min, pure water is subjected to ultrasonic treatment for 15min, isopropanol is subjected to ultrasonic treatment for 15min, and the mixture is dried in an oven for 1 h; the substrate was then transferred to a UV-ozon apparatus for surface treatment for 15min and immediately transferred to a glove box after treatment.
Spin-coating the hole injection layer electronic ink prepared in the embodiment 1 on a substrate in a solution spin-coating manner, controlling the spin-coating thickness by controlling the rotation speed of a spin-coating instrument, wherein the spin-coating thickness is 35nm, placing the substrate in a culture dish after the spin-coating is finished, drying the substrate for 15min in a vacuum state, and baking the substrate for 30min on a 150 ℃ hot table after the vacuum drying; the appearance of the film is measured by a white light interferometer, and the test result shows that: the formed film is formed uniformly;
a hole transport layer material (N4, N4' -bis (4-vinylphenyl) -N4, N4' -bis-1-naphthylbiphenyl-4, 4' -diamine, abbreviated as VNPB) was spin-coated on the formed hole injection layer film. The film thickness was controlled to be about 25nm by spin coating. After spin coating to form a film, drying for 20min in a vacuum state, and baking for 30min on a hot bench at 200 ℃ after the solvent is volatilized and dried;
and spin-coating a layer of light-emitting layer material on the formed hole transport layer film. The luminescent layer material comprises a host material and a guest material, wherein in the experiment, mCP (Chinese name: 9,9' - (1, 3-phenyl) di-9H-carbazole) is selected as the host material, and Ir (ppy) is selected2acac (Chinese name: bis (2- (naphthylacetamido-2-yl) pyridine) (acetylacetone) iridium) is used as a guest material, and the doping concentration of the guest is 7 wt%. Controlling the film thickness to be 30nm through spin coating; after spin coating to form a film, the film is heated at 80 DEG CBaking for 30 min;
evaporating an electron transport layer material TPBi (Chinese name: 1,3, 5-tri (1-phenyl-1H-benzimidazole-2-yl) benzene) on the luminous layer in a vacuum evaporation mode, wherein the thickness of the electron transport layer material is 50 nm;
evaporating an electron injection layer material LiF on the electron transport layer in a vacuum evaporation mode, wherein the thickness of the electron injection layer material is 1 nm;
evaporating a cathode material Al on the electron injection layer in a vacuum evaporation mode, wherein the thickness of the cathode material is 120 nm;
and carrying out UV curing packaging on the prepared OLED device, and then baking for 20min at 70 ℃.
Example 5
An OLED device is prepared by the following steps:
firstly, the ITO substrate is cleaned according to the following sequence: 5% KOH solution is subjected to ultrasonic treatment for 15min, pure water is subjected to ultrasonic treatment for 15min, isopropanol is subjected to ultrasonic treatment for 15min, and the mixture is dried in an oven for 1 h; the substrate was then transferred to a UV-ozon apparatus for surface treatment for 15min and immediately transferred to a glove box after treatment.
Spin-coating the hole injection layer electronic ink obtained in the preparation of example 2 on a substrate in a solution spin-coating manner, controlling the spin-coating thickness by controlling the rotation speed of a spin-coating instrument, wherein the spin-coating thickness is 35nm, placing the substrate in a culture dish after the spin-coating is finished, drying the substrate for 15min in a vacuum state, and after the vacuum drying, placing the substrate on a hot table at 150 ℃ for baking for 30 min; the appearance of the film is measured by a white light interferometer, and the test result shows that: the formed film is formed uniformly;
a hole transport layer material (N4, N4' -bis (4-vinylphenyl) -N4, N4' -bis-1-naphthylbiphenyl-4, 4' -diamine, abbreviated as VNPB) was spin-coated on the formed hole injection layer film. The film thickness was controlled to be about 25nm by spin coating. After spin coating to form a film, drying for 20min in a vacuum state, and baking for 30min on a hot bench at 200 ℃ after the solvent is volatilized and dried;
and spin-coating a layer of light-emitting layer material on the formed hole transport layer film. The luminescent layer material consists of a host material and a guest material, and mCP is selected in the experiment(Chinese name: 9,9' - (1, 3-phenyl) di-9H-carbazole) as a host material, and Ir (ppy)2acac (Chinese name: bis (2- (naphthylacetamido-2-yl) pyridine) (acetylacetone) iridium) is used as a guest material, and the doping concentration of the guest is 7 wt%. Controlling the film thickness to be 30nm through spin coating; after spin coating to form a film, baking the film for 30min on a hot table at 80 ℃;
evaporating an electron transport layer material TPBi (Chinese name: 1,3, 5-tri (1-phenyl-1H-benzimidazole-2-yl) benzene) on the luminous layer in a vacuum evaporation mode, wherein the thickness of the electron transport layer material is 50 nm;
evaporating an electron injection layer material LiF on the electron transport layer in a vacuum evaporation mode, wherein the thickness of the electron injection layer material is 1 nm;
evaporating a cathode material Al on the electron injection layer in a vacuum evaporation mode, wherein the thickness of the cathode material is 120 nm;
and carrying out UV curing packaging on the prepared OLED device, and then baking for 20min at 70 ℃.
Example 6
An OLED device is prepared by the following steps:
firstly, the ITO substrate is cleaned according to the following sequence: 5% KOH solution is subjected to ultrasonic treatment for 15min, pure water is subjected to ultrasonic treatment for 15min, isopropanol is subjected to ultrasonic treatment for 15min, and the mixture is dried in an oven for 1 h; the substrate was then transferred to a UV-ozon apparatus for surface treatment for 15min and immediately transferred to a glove box after treatment.
Spin-coating the hole injection layer electronic ink obtained in the preparation of example 3 on a substrate in a solution spin-coating manner, controlling the spin-coating thickness by controlling the rotation speed of a spin-coating instrument, wherein the spin-coating thickness is 35nm, placing the substrate in a culture dish after the spin-coating is finished, drying the substrate for 15min in a vacuum state, and after the vacuum drying, placing the substrate on a hot table at 150 ℃ for baking for 30 min; the appearance of the film is measured by a white light interferometer, and the test result shows that: the formed film is formed uniformly;
a hole transport layer material (N4, N4' -bis (4-vinylphenyl) -N4, N4' -bis-1-naphthylbiphenyl-4, 4' -diamine, abbreviated as VNPB) was spin-coated on the formed hole injection layer film. The film thickness was controlled to be about 25nm by spin coating. After spin coating to form a film, drying for 20min in a vacuum state, and baking for 30min on a hot bench at 200 ℃ after the solvent is volatilized and dried;
and spin-coating a layer of light-emitting layer material on the formed hole transport layer film. The luminescent layer material comprises a host material and a guest material, wherein in the experiment, mCP (Chinese name: 9,9' - (1, 3-phenyl) di-9H-carbazole) is selected as the host material, and Ir (ppy) is selected2acac (Chinese name: bis (2- (naphthylacetamido-2-yl) pyridine) (acetylacetone) iridium) is used as a guest material, and the doping concentration of the guest is 7 wt%. Controlling the film thickness to be 30nm through spin coating; after spin coating to form a film, baking the film for 30min on a hot table at 80 ℃;
evaporating an electron transport layer material TPBi (Chinese name: 1,3, 5-tri (1-phenyl-1H-benzimidazole-2-yl) benzene) on the luminous layer in a vacuum evaporation mode, wherein the thickness of the electron transport layer material is 50 nm;
evaporating an electron injection layer material LiF on the electron transport layer in a vacuum evaporation mode, wherein the thickness of the electron injection layer material is 1 nm;
evaporating a cathode material Al on the electron injection layer in a vacuum evaporation mode, wherein the thickness of the cathode material is 120 nm;
and carrying out UV curing packaging on the prepared OLED device, and then baking for 20min at 70 ℃.
Comparative example 1
An OLED device is prepared by the following steps:
firstly, the ITO substrate is cleaned according to the following sequence: 5% KOH solution is subjected to ultrasonic treatment for 15min, pure water is subjected to ultrasonic treatment for 15min, isopropanol is subjected to ultrasonic treatment for 15min, and the mixture is dried in an oven for 1 h; the substrate was then transferred to a UV-ozon apparatus for surface treatment for 15min and immediately transferred to a glove box after treatment.
Evaporating HAT-CN hole injection material on the substrate in a vacuum evaporation mode, wherein the evaporation thickness is 35nm, and the evaporation rate is 0.1 nm/s;
a hole transport material NPB (Chinese name: N, N '-di-1-naphthyl-N, N' -diphenyl benzidine) is evaporated on the substrate in a vacuum evaporation mode, the evaporation thickness is 25nm, and the evaporation rate is 0.1 nm/s;
by vacuum evaporationVapor-depositing luminescent layer materials mCP and Ir (ppy) on a substrate2acac, control Ir (ppy)2The doping concentration of acac is 7 wt%; the evaporation thickness is 30nm, and the evaporation rate is 0.1 nm/s;
evaporating an electron transport layer material TPBi (Chinese name: 1,3, 5-tri (1-phenyl-1H-benzimidazole-2-yl) benzene) on the luminous layer in a vacuum evaporation mode, wherein the thickness of the electron transport layer material is 50 nm;
evaporating an electron injection layer material LiF on the electron transport layer in a vacuum evaporation mode, wherein the thickness of the electron injection layer material is 1 nm;
evaporating a cathode material Al on the electron injection layer in a vacuum evaporation mode, wherein the thickness of the cathode material is 120 nm;
and carrying out UV curing packaging on the prepared OLED device, and then baking for 20min at 70 ℃.
Comparative example 2
An OLED device is prepared by the following steps:
firstly, the ITO substrate is cleaned according to the following sequence: 5% KOH solution is subjected to ultrasonic treatment for 15min, pure water is subjected to ultrasonic treatment for 15min, isopropanol is subjected to ultrasonic treatment for 15min, and the mixture is dried in an oven for 1 h; the substrate was then transferred to a UV-ozon apparatus for surface treatment for 15min and immediately transferred to a glove box after treatment.
Evaporating an F6-TCNNQ hole injection material on a substrate in a vacuum evaporation mode, wherein the evaporation thickness is 35nm, and the evaporation rate is 0.1 nm/s;
a hole transport material NPB (Chinese name: N, N '-di-1-naphthyl-N, N' -diphenyl benzidine) is evaporated on the substrate in a vacuum evaporation mode, the evaporation thickness is 25nm, and the evaporation rate is 0.1 nm/s;
evaporating luminescent layer materials mCP and Ir (ppy) on the substrate by vacuum evaporation2acac, control Ir (ppy)2The doping concentration of acac is 7 wt%; the evaporation thickness is 30nm, and the evaporation rate is 0.1 nm/s;
evaporating an electron transport layer material TPBi (Chinese name: 1,3, 5-tri (1-phenyl-1H-benzimidazole-2-yl) benzene) on the luminous layer in a vacuum evaporation mode, wherein the thickness of the electron transport layer material is 50 nm;
evaporating an electron injection layer material LiF on the electron transport layer in a vacuum evaporation mode, wherein the thickness of the electron injection layer material is 1 nm;
evaporating a cathode material Al on the electron injection layer in a vacuum evaporation mode, wherein the thickness of the cathode material is 120 nm;
and carrying out UV curing packaging on the prepared OLED device, and then baking for 20min at 70 ℃.
The device properties of examples 4-6 and comparative examples 1-2 are shown in table 1:
TABLE 1
| Device numbering | Maximum current efficiency | (CIEx,CIEy) |
| Example 4 | 83cd/A | (0.28,0.64) |
| Example 5 | 82.5cd/A | (0.28,0.64) |
| Example 6 | 80cd/A | (0.28,0.64) |
| Comparative example 1 | 87cd/A | (0.28,0.64) |
| Comparative example 2 | 87cd/A | (0.28,0.64) |
From the above results, it can be seen that the inks prepared by adding an appropriate solvent to the vapor deposition materials HAT-CN and F6-TCNNQ in examples 1, 2 and 3 can be used as materials for preparing a hole injection layer by solution processing, and that the solution processed OLED devices (examples 4 to 6) and the vapor deposition OLED devices (comparative examples 1 to 2) prepared by using the hole injection layer inks in examples 1 to 3 exhibit comparable performances, which indicates that the ink performance of the hole injection layers in examples 1 to 3 is good.
The inks of examples 1 to 3 had good film-forming properties, were not easily dissolved in the solvent of the ink of the subsequent light-emitting layer or hole transport layer, and had good film-forming stability.
In addition, N, N-dimethylacetamide, N, N-methylpyrrolidone, cyclohexanone and 1,4 dioxane also have good solubility for the hole injection materials HAT-CN, F4TCNQ and F6 TCNNQ.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. An ink comprising a hole injecting material and a main solvent;
the hole injection material is selected from one or more of HAT-CN, F4-TCNQ and F6-TCNNQ;
the main solvent is one or more selected from N, N-dimethylacetamide, N-dimethylformamide, N-methylpyrrolidone, cyclohexanone, sulfolane, 1,4 dioxane and dimethyl sulfoxide.
2. The ink according to claim 1, wherein a ratio of a mass of the hole injection material to a volume of the main solvent is 10 mg: (0.1-5) mL.
3. The ink according to claim 1 or 2, wherein the viscosity of the ink at 25 ℃ is from 3cP to 15cP and the surface tension is from 30 to 42 dynes/cm.
4. The ink according to claim 3, wherein the ink further comprises a second organic solvent, and the second organic solvent is one or more selected from triethylene glycol, diethylene glycol, pentanediol and triethylene glycol dimethyl ether.
5. The ink according to claim 4, further comprising a third organic solvent, wherein the third organic solvent is one or more selected from the group consisting of diethylene glycol dimethyl ether, diethylene glycol isobutyl ether, dipropylene glycol monomethyl ether, tetraethylene glycol dimethyl ether, methyl benzoate, and anisole.
6. The ink according to claim 5, wherein a ratio of a mass of the hole injection material to a volume of the main solvent, a volume of the second organic solvent, and a volume of the third organic solvent is: 10 mg: (0.5-2) mL: (0.05-1) mL: (0.03-1) mL.
7. The ink according to claim 6, wherein a ratio of a mass of the hole injection material to a volume of the main solvent, a volume of the second organic solvent, and a volume of the third organic solvent is: 10 mg: (0.5-1.5) mL: (0.1-0.5) mL: (0.1-0.5) mL.
8. A method for preparing ink is characterized by comprising the following steps:
dispersing the hole injection material in a main solvent, and dissolving to obtain the hole injection material;
the hole injection material is selected from one or more of HAT-CN, F4-TCNQ and F6-TCNNQ;
the main solvent is one or more selected from N, N-dimethylacetamide, N-dimethylformamide, N-methylpyrrolidone, cyclohexanone, sulfolane, 1,4 dioxane and dimethyl sulfoxide.
9. The method of claim 8, comprising the steps of:
dispersing the hole injection material in the main solvent, dissolving, adding a second organic solvent, and stirring to obtain the hole injection material;
the second organic solvent is selected from one or more of triethylene glycol, diethylene glycol, pentanediol and triethylene glycol dimethyl ether.
10. The method of claim 9, comprising the steps of:
dispersing the hole injection material in the main solvent, dissolving, adding the second organic solvent, stirring, adding the third organic solvent, and stirring to obtain the hole injection material;
the third organic solvent is one or more selected from diethylene glycol dimethyl ether, diethylene glycol monoisobutyl ether, dipropylene glycol monomethyl ether, tetraethylene glycol dimethyl ether, methyl benzoate and anisole.
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