CN111171360A - Cell culture apparatus surface modification method and cell culture apparatus - Google Patents
Cell culture apparatus surface modification method and cell culture apparatus Download PDFInfo
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- CN111171360A CN111171360A CN202010130778.XA CN202010130778A CN111171360A CN 111171360 A CN111171360 A CN 111171360A CN 202010130778 A CN202010130778 A CN 202010130778A CN 111171360 A CN111171360 A CN 111171360A
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/12—Chemical modification
- C08J7/123—Treatment by wave energy or particle radiation
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- C—CHEMISTRY; METALLURGY
- C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
- C12M—APPARATUS FOR ENZYMOLOGY OR MICROBIOLOGY; APPARATUS FOR CULTURING MICROORGANISMS FOR PRODUCING BIOMASS, FOR GROWING CELLS OR FOR OBTAINING FERMENTATION OR METABOLIC PRODUCTS, i.e. BIOREACTORS OR FERMENTERS
- C12M25/00—Means for supporting, enclosing or fixing the microorganisms, e.g. immunocoatings
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2325/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Derivatives of such polymers
- C08J2325/02—Homopolymers or copolymers of hydrocarbons
- C08J2325/04—Homopolymers or copolymers of styrene
- C08J2325/06—Polystyrene
Abstract
The invention discloses a cell culture device and a surface modification method thereof. The cell culture device surface modification method comprises the following steps: s1, first ion treatment: carrying out plasma etching treatment on the surface of the base material by using inert initiation gas under a preset condition so as to form a long-acting hydrophilic modified surface on the surface of the base material; s2, second ion treatment: and taking inert gas and reactive plasma gas as initiating substances, and carrying out plasma etching treatment on the base material under preset conditions. The surface modification method of the cell culture device can effectively improve the surface hydrophilic performance and realize the effect of super-hydrophilic durable modification.
Description
Technical Field
The invention relates to the technical field of cell culture, in particular to a cell culture device and a surface modification method thereof.
Background
A method of improving the properties of the surface of a plastic article by physical or chemical means is called surface modification. The main common methods for modifying the surface of the high polymer material comprise physical modification methods such as surface mechanical modification, surface coating modification, surface vacuum plating, sputtering, spraying and the like; flame modification, solution treatment, discharge, ray irradiation, ion plating, electroplating, graft polymerization modification and other chemical modification methods. Most cells in animals and human bodies, such as fibroblasts, skeletal tissues (bones and cartilages), cardiac muscle, smooth muscle, liver, lung, kidney, mammary gland skin glial cells and the like, grow in an adherent manner when being placed in vitro for culture in vitro, so that the cell surface of an in vitro cell culture device is required to have certain hydrophilicity, and the requirement of adherent cell in vitro culture can be met.
At present, in the field of consumable materials in biological laboratories, the corona discharge modification technology and the plasma treatment polymer material surface modification technology are generally adopted to carry out hydrophilic modification on the material surface, so that the surface tension of the material is increased, and the cell adhesion performance is improved. Although the plasma technology has obvious advantages in the aspect of hydrophilic modification of high polymer materials, the plasma technology has the defects of not strong enough hydrophilic capability of the modified materials, short hydrophilic residence time, poor surface appearance and the like; these deficiencies will have a very negative impact on cell adhesion behavior.
Generally, the gas sources used in plasma surface treatment technology can be divided into two categories, inert gas and reactive gas, and the hydrophilic effect of the polymer material surface treated by the two gases has a significant difference, mainly expressed in the length of hydrophilic maintenance time. After the surface of the material is treated by reactive plasma gas (such as oxygen), the hydrophilic capacity is stronger, but the time for maintaining the hydrophilicity is short; compared with reactive plasma treatment, the material surface hydrophilic capability after inert plasma gas (such as argon) treatment is weaker, and the time for maintaining the hydrophilicity is longer. It is proposed that the two plasma gases are mixed according to a certain proportion to treat the surface of the material, so that the respective defects are made up to a certain extent, the hydrophilic ability and the hydrophilic residence time are obviously improved, but the hydrophilic ability of the modified material is still gradually weakened along with the time.
Disclosure of Invention
Therefore, it is necessary to provide a cell culture device surface modification method and a cell culture device, which can effectively improve the capability of long-acting hydrophilic modification of the surface of a high polymer material, realize the effect of long-acting hydrophilic modification, widen the application range and field of products, and reduce the cost of users.
A method for modifying the surface of a cell culture device comprises the following steps:
s1, first ion treatment: carrying out plasma etching treatment (1min) on the surface of the base material by using inert initiation gas under a preset condition, so that the surface of the base material forms a long-acting hydrophilic modified surface;
s2, second ion treatment: the substrate was subjected to plasma etching treatment (3min) under predetermined conditions with an inert gas and a reactive plasma gas as initiating substances.
In one embodiment, the inert initiation gas in step S1 is argon.
In one embodiment, the volume ratio of the inert gas to the reactive plasma gas in step S2 is 3: 1.
In one embodiment, the reactive plasma gas is a compound that itself can provide oxygen-containing groups or that can react with the substrate material by breaking bonds to form oxygen-containing groups.
In one embodiment, the oxygen-containing group is a carbonyl group, a hydroxyl group, or a carboxyl group.
In one embodiment, the predetermined conditions at the time of the first ion processing in step S1 are as follows:
the vacuum degree is 20mT-150mT, the temperature is 30-55 ℃, the gas flow is 5sccm-80sccm, the processing power is 60w-350w, and the processing time is more than 240 s.
In one embodiment, the predetermined conditions at the time of the first ion processing in step S1 are as follows: the vacuum degree is 20mT-50mT, the temperature is 30-35 ℃, the gas flow is 20sccm-50sccm, the processing power is 100w-250w, and the processing time is 300s-800 s.
In one embodiment, the predetermined conditions in the second ion processing in step S2 are as follows:
the vacuum degree is 20mT-150mT, the temperature is 30-55 ℃, the gas flow is 20sccm-180sccm, the processing power is 60w-350w, and the processing time is 100s-1200 s.
In one embodiment, the predetermined conditions in the second ion processing in step S2 are as follows:
the vacuum degree is 50mT-100mT, the temperature is 40-50 ℃, the gas flow is 140sccm-160sccm, the processing power is 100w-200w, and the processing time is 500s-800 s.
A cell culture device comprising a cell culture scaffold, said cell culture scaffold being modified by said cell culture device surface modification method to obtain a long-lasting hydrophilic modified surface.
The surface modification method of the cell culture device can improve the long-acting hydrophilic modification capability of the surface of a high polymer material, realize the long-acting hydrophilic modification effect, widen the application range and field of products, realize serum-free culture to reduce the cost of users and easily realize industrialization. By adopting the surface modification method of the cell culture device, the hydrophilicity of the surface of the base material is enhanced, the contact angle reaches below 30 degrees, and the hydrophilicity of the surface of the base material does not decline after 3 months of accelerated aging test. The invention firstly uses the inert initiation gas to modify the surface of the material, and then uses the inert gas and the reactive plasma gas with a certain proportion to further modify the material, which is beneficial to realizing the effect of long-acting hydrophilic modification. Cells difficult to culture by adherence in vitro can grow well on the basic surface treated by the method, and can meet the requirements of low-serum and serum-free culture of conventional cells and cells difficult to culture.
Detailed Description
The present invention may be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Example 1
This example provides a method for modifying the surface of a cell culture device.
A method for modifying the surface of a cell culture device comprises the following steps:
s1, first ion treatment: and carrying out plasma etching treatment on the surface of the base material by using the inert initiation gas under a preset condition, so that the surface of the base material forms a long-acting hydrophilic modified surface, wherein the plasma etching treatment time is 1 min. The predetermined conditions at the time of the first ion processing in step S1 are as follows: the vacuum degree is 20mT-150mT, the temperature is 30-55 ℃, the gas flow is 5sccm-80sccm, the processing power is 60w-350w, and the processing time is more than 240 s. The inert initiation gas in step S1 is one of inert gases.
S2, second ion treatment: and taking inert gas and reactive plasma gas as initiating substances, and carrying out plasma etching treatment on the base material under a preset condition, wherein the plasma etching treatment time is 3 min. The predetermined conditions at the time of the second ion processing in step S2 are as follows: the vacuum degree is 20mT-150mT, the temperature is 30-55 ℃, the gas flow is 20sccm-180sccm, the processing power is 60w-350w, and the processing time is 100s-1200 s. The volume ratio of the inert gas to the reactive plasma gas in step S2 is preferably 3: 1. The reactive plasma gas is a compound that can provide oxygen-containing groups by itself or can generate oxygen-containing groups by breaking chemical bonds with the substrate material and then reacting with the substrate material. The oxygen-containing group is a carbonyl group, a hydroxyl group or a carboxyl group.
The surface modification method of the cell culture device can improve the long-acting hydrophilic modification capability of the surface of a high polymer material, realize the long-acting hydrophilic modification effect, widen the application range and field of products, realize serum-free culture to reduce the cost of users and easily realize industrialization. By adopting the surface modification method of the cell culture device, the hydrophilicity of the surface of the base material is enhanced, the contact angle reaches below 30 degrees, and the hydrophilicity of the surface of the base material does not decline after 3 months of accelerated aging test. The invention firstly uses the inert initiation gas to modify the surface of the material, and then uses the inert gas and the reactive plasma gas with a certain proportion to further modify the material, which is beneficial to realizing the effect of long-acting hydrophilic modification. Cells difficult to culture by adherence in vitro can grow well on the basic surface treated by the method, and can meet the requirements of low-serum and serum-free culture of conventional cells and cells difficult to culture.
Example 2
This example provides a method for modifying the surface of a cell culture device.
A method for modifying the surface of a cell culture device comprises the following steps:
s1, first ion treatment: and carrying out plasma etching treatment on the surface of the substrate by using the inert initiation gas under a preset condition so that the surface of the substrate forms a long-acting hydrophilic modified surface. The predetermined conditions at the time of the first ion processing in step S1 are as follows: the vacuum degree is 20mT-150mT, the temperature is 30-55 ℃, the gas flow is 5sccm-80sccm, the processing power is 60w-350w, and the processing time is more than 240 s. The inert initiation gas in step S1 is preferably argon.
S2, second ion treatment: and taking inert gas and reactive plasma gas as initiating substances, and carrying out plasma etching treatment on the base material under a preset condition. The predetermined conditions at the time of the second ion processing in step S2 are as follows: the vacuum degree is 20mT-150mT, the temperature is 30-55 ℃, the gas flow is 20sccm-180sccm, the processing power is 60w-350w, and the processing time is 100s-1200 s. The reactive plasma gas is a compound that can provide oxygen-containing groups by itself or can generate oxygen-containing groups by breaking chemical bonds with the substrate material and then reacting with the substrate material. The oxygen-containing group is a carbonyl group, a hydroxyl group or a carboxyl group. The volume ratio of the inert gas to the reactive plasma gas in step S2 was 3: 1.
Example 3
This example provides a method for modifying the surface of a cell culture device.
A method for modifying the surface of a cell culture device comprises the following steps:
s1, first ion treatment: and carrying out plasma etching treatment on the surface of the substrate by using the inert initiation gas under a preset condition so that the surface of the substrate forms a long-acting hydrophilic modified surface. The predetermined conditions at the time of the first ion processing in step S1 are as follows: the vacuum degree is 20mT, the temperature is 30 ℃, the gas flow is 80sccm, the processing power is 350w and the processing time is 300 s. The initiating gas in step S1 is argon.
S2, second ion treatment: and taking inert gas and reactive plasma gas as initiating substances, and carrying out plasma etching treatment on the base material under a preset condition. The predetermined conditions at the time of the second ion processing in step S2 are as follows: the vacuum degree is 20mT, the temperature is 30 ℃, the gas flow is 180sccm, the processing power is 350w, and the processing time is 100 s. The reactive plasma gas is a compound that is capable of providing oxygen-containing groups by itself. The oxygen-containing group is a carbonyl group, a hydroxyl group or a carboxyl group. The volume ratio of the inert gas to the reactive plasma gas in step S2 was 3: 1.
Example 4
This example provides a method for modifying the surface of a cell culture device.
A method for modifying the surface of a cell culture device comprises the following steps:
s1, first ion treatment: and carrying out plasma etching treatment on the surface of the substrate by using the inert initiation gas under a preset condition so that the surface of the substrate forms a long-acting hydrophilic modified surface. The predetermined conditions at the time of the first ion processing in step S1 are as follows: the vacuum degree is 150mT, the temperature is 55 ℃, the gas flow is 5sccm, the processing power is 60w and the processing time is 240 s. In step S1, the inert initiation gas is argon.
S2, second ion treatment: and taking inert gas and reactive plasma gas as initiating substances, and carrying out plasma etching treatment on the base material under a preset condition. The predetermined conditions at the time of the second ion processing in step S2 are as follows: the vacuum degree is 150mT, the temperature is 55 ℃, the gas flow is 20sccm, the processing power is 60w, and the processing time is 1200 s. The reactive plasma gas is a compound which can generate oxygen-containing groups by chemical bond breaking and further reaction with the substrate material. The oxygen-containing group is a carbonyl group, a hydroxyl group or a carboxyl group. The volume ratio of the inert gas to the reactive plasma gas in step S2 was 3: 1.
Example 5
This example provides a method for modifying the surface of a cell culture device.
A method for modifying the surface of a cell culture device comprises the following steps:
s1, first ion treatment: and carrying out plasma etching treatment on the surface of the substrate by using the inert initiation gas under a preset condition so that the surface of the substrate forms a long-acting hydrophilic modified surface. The predetermined conditions at the time of the first ion processing in step S1 are as follows: the vacuum degree is 30mT, the temperature is 40 ℃, the gas flow is 60sccm, the processing power is 250w and the processing time is 300 s. In step S1, the inert initiation gas is argon.
S2, second ion treatment: and taking inert gas and reactive plasma gas as initiating substances, and carrying out plasma etching treatment on the base material under a preset condition. The predetermined conditions at the time of the second ion processing in step S2 are as follows: the vacuum degree is 30mT, the temperature is 40 ℃, the gas flow is 100sccm, the processing power is 250w, and the processing time is 300 s. The reactive plasma gas is a compound that is capable of providing oxygen-containing groups by itself. The oxygen-containing group is a carbonyl group, a hydroxyl group or a carboxyl group. The volume ratio of the inert gas to the reactive plasma gas in step S2 was 3: 1.
Example 6
This example provides a method for modifying the surface of a cell culture device.
A method for modifying the surface of a cell culture device comprises the following steps:
s1, first ion treatment: and carrying out plasma etching treatment on the surface of the substrate by using the inert initiation gas under a preset condition so that the surface of the substrate forms a long-acting hydrophilic modified surface. The process conditions at the time of the first ion treatment in step S1 are as follows: the vacuum degree is 20mT, the temperature is 30 ℃, the gas flow is 20sccm, the processing power is 250w, and the processing time is 800 s. In step S1, the inert initiation gas is argon.
S2, second ion treatment: and taking inert gas and reactive plasma gas as initiating substances, and carrying out plasma etching treatment on the base material under a preset condition. The predetermined conditions at the time of the second ion processing in step S2 are as follows: the vacuum degree is 50mT, the temperature is 40 ℃, the gas flow is 140sccm, the processing power is 200w, and the processing time is 800 s. The reactive plasma gas is a compound that is capable of providing oxygen-containing groups by itself. The oxygen-containing group is a carbonyl group, a hydroxyl group or a carboxyl group. The volume ratio of the inert gas to the reactive plasma gas in step S2 was 3: 1.
Example 7
This example provides a method for modifying the surface of a cell culture device.
A method for modifying the surface of a cell culture device comprises the following steps:
s1, first ion treatment: and carrying out plasma etching treatment on the surface of the substrate by using the inert initiation gas under a preset condition so that the surface of the substrate forms a long-acting hydrophilic modified surface. The process conditions at the time of the first ion treatment in step S1 are as follows: the vacuum degree is 50mT, the temperature is 35 ℃, the gas flow is 50sccm, the processing power is 100w, and the processing time is 300 s. In step S1, the inert initiation gas is argon.
S2, second ion treatment: and taking inert gas and reactive plasma gas as initiating substances, and carrying out plasma etching treatment on the base material under a preset condition. The predetermined conditions at the time of the second ion processing in step S2 are as follows: the vacuum degree is 100mT, the temperature is 50 ℃, the gas flow is 160sccm, the processing power is 100w, and the processing time is 500 s. The reactive plasma gas is a compound which can generate oxygen-containing groups by chemical bond breaking and further reaction with the substrate material. The oxygen-containing group is a carbonyl group, a hydroxyl group or a carboxyl group. The volume ratio of the inert gas to the reactive plasma gas in step S2 was 3: 1.
Example 8
This example provides a method for modifying the surface of a cell culture device.
A method for modifying the surface of a cell culture device comprises the following steps:
s1, first ion treatment: and carrying out plasma etching treatment on the surface of the substrate by using the inert initiation gas under a preset condition so that the surface of the substrate forms a long-acting hydrophilic modified surface. The process conditions at the time of the first ion treatment in step S1 are as follows: the vacuum degree is 30mT, the temperature is 30 ℃, the gas flow is 40sccm, the processing power is 150w, and the processing time is 500 s. In step S1, the inert initiation gas is argon.
S2, second ion treatment: and taking inert gas and reactive plasma gas as initiating substances, and carrying out plasma etching treatment on the base material under a preset condition. The predetermined conditions at the time of the second ion processing in step S2 are as follows: the vacuum degree is 700mT, the temperature is 45 ℃, the gas flow is 150sccm, the processing power is 150w, and the processing time is 600 s. The reactive plasma gas is a compound that is capable of providing oxygen-containing groups by itself. The oxygen-containing group is a carbonyl group, a hydroxyl group or a carboxyl group. The volume ratio of the inert gas to the reactive plasma gas in step S2 was 3: 1.
Example 8
The present example provides a cell culture apparatus.
A cell culture assembly comprising a cell culture scaffold modified by the cell culture assembly surface modification method of any one of embodiments 3-7 to provide a superhydrophilic cell growth surface.
Example 9
The present example provides a cell culture apparatus.
A cell culture device comprising a cell culture scaffold modified by a cell culture device surface modification method to obtain a superhydrophilic cell growth surface.
S1, first ion treatment: and carrying out plasma etching treatment on the surface of the substrate by using the inert initiation gas under a preset condition so that the surface of the substrate forms a long-acting hydrophilic modified surface. The process conditions at the time of the first ion treatment in step S1 are as follows: the vacuum degree is 30mT, the temperature is 30 ℃, the gas flow is 40sccm, the processing power is 150w, and the processing time is 500 s. In step S1, the inert initiation gas is argon.
S2, second ion treatment: and taking inert gas and reactive plasma gas as initiating substances, and carrying out plasma etching treatment on the base material under a preset condition. The predetermined conditions at the time of the second ion processing in step S2 are as follows: the vacuum degree is 700mT, the temperature is 45 ℃, the gas flow is 150sccm, the processing power is 150w, and the processing time is 600 s. The reactive plasma gas is a compound that can provide oxygen-containing groups by itself or can generate oxygen-containing groups by breaking chemical bonds with the substrate material and then reacting with the substrate material. The oxygen-containing group is a carbonyl group, a hydroxyl group or a carboxyl group. The volume ratio of the inert gas to the reactive plasma gas in step S2 was 3: 1.
X polystyrene photoelectron spectroscopy scanning was performed on O and C elements on the surfaces of an untreated polystyrene substrate, a plasma hydrophilically-treated polystyrene substrate, and a polystyrene substrate treated by the cell culture apparatus surface modification method of the present invention, and the analysis results are shown in Table 1.
TABLE 1 photoelectron spectroscopy analysis results of different treatment modes of the surface of polystyrene substrate
| Treatment method | C1s(atomic％) | O1s(atomic％) |
| Ordinary untreated | 98.97 | 1.03 |
| Conventional hydrophilic treatment | 94.82 | 5.18 |
| Super hydrophilic treatment | 73.58 | 26.42 |
As can be seen from Table 1, the surface of the untreated polystyrene substrate is almost entirely carbon, and only a small amount of oxygen, which is adsorbed or undergoes surface oxidation, exists; the oxygen element content of the surface of the polystyrene base material after the conventional hydrophilic treatment is increased to 5.18 percent, which shows that the surface is partially oxidized after the first ion treatment, and oxygen-containing groups such as hydroxyl, carbonyl and the like are introduced; after the surface is subjected to acrylic acid plasma grafting treatment, the oxygen element content on the surface of the polystyrene substrate is increased sharply and reaches 26.42%, hydroxyl groups, carbonyl groups and a large number of carboxyl functional groups exist, and the analysis results are consistent with the contact angle measurement, infrared spectroscopy and X polystyrene surface element analysis results.
By performing atomic force microscope analysis on the surfaces of the untreated polystyrene substrate, the plasma hydrophilic treated polystyrene substrate and the polystyrene substrate treated by the cell culture device surface modification method, the surface of the untreated polystyrene substrate is extremely smooth and flat except for the influence of dust particles adsorbed on the surface in some sample preparation processes. The surface becomes rough after the conventional hydrophilic treatment in the first step, which shows that the surface of the polystyrene material can improve the long-acting hydrophilic modification capability of the surface of the high polymer material and realize the long-acting hydrophilic modification effect through the surface modification method of the cell culture device.
In conclusion, the cell culture device surface modification method can improve the long-acting hydrophilic modification capacity of the surface of the high polymer material, realize the long-acting hydrophilic modification effect, widen the application range and field of products, realize serum-free culture to reduce the cost of users and easily realize industrialization. By adopting the surface modification method of the cell culture device, the hydrophilicity of the surface of the base material is enhanced, the contact angle reaches below 30 degrees, and the hydrophilicity of the surface of the base material does not decline after 3 months of accelerated aging test. The invention firstly uses the inert initiation gas to modify the surface of the material, and then uses the inert gas and the reactive plasma gas with a certain proportion to further modify the material, which is beneficial to realizing the effect of long-acting hydrophilic modification. Cells difficult to culture by adherence in vitro can grow well on the basic surface treated by the method, and can meet the requirements of low-serum and serum-free culture of conventional cells and cells difficult to culture.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A method for modifying the surface of a cell culture device, comprising the steps of:
s1, first ion treatment: carrying out plasma etching treatment on the surface of the base material by using inert initiation gas under a preset condition so as to form a long-acting hydrophilic modified surface on the surface of the base material;
s2, second ion treatment: and taking inert gas and reactive plasma gas as initiating substances, and carrying out plasma etching treatment on the base material under preset conditions.
2. The method for modifying the surface of a cell culture apparatus according to claim 1, wherein the inert initiation gas in step S1 is argon gas.
3. The method for modifying the surface of a cell culture apparatus according to claim 2, wherein the volume ratio of the inert gas to the reactive plasma gas in step S2 is 3: 1.
4. The method of claim 1, wherein the reactive plasma gas is a compound that can provide oxygen-containing groups or that can react with the substrate material after breaking bonds to form oxygen-containing groups.
5. The method for modifying the surface of a cell culture apparatus according to claim 4, wherein the oxygen-containing group is a carbonyl group, a hydroxyl group, or a carboxyl group.
6. The method for modifying the surface of a cell culture apparatus according to any one of claims 1 to 5, wherein the predetermined conditions in the first ion treatment in step S1 are as follows:
the vacuum degree is 20mT-150mT, the temperature is 30-55 ℃, the gas flow is 5sccm-80sccm, the processing power is 60w-350w, and the processing time is more than 240 s.
7. The method for modifying the surface of a cell culture apparatus according to claim 6, wherein the predetermined conditions for the first ion treatment in step S1 are as follows: the vacuum degree is 20mT-50mT, the temperature is 30-35 ℃, the gas flow is 20sccm-50sccm, the processing power is 100w-250w, and the processing time is 300s-800 s.
8. The method for modifying the surface of a cell culture apparatus according to any one of claims 1 to 5, wherein the predetermined conditions in the second ion treatment in step S2 are as follows:
the vacuum degree is 20mT-150mT, the temperature is 30-55 ℃, the gas flow is 20sccm-180sccm, the processing power is 60w-350w, and the processing time is 100s-1200 s.
9. The method for modifying the surface of a cell culture apparatus according to claim 8, wherein the predetermined conditions for the second ion treatment in step S2 are as follows:
the vacuum degree is 50mT-100mT, the temperature is 40-50 ℃, the gas flow is 140sccm-160sccm, the processing power is 100w-200w, and the processing time is 500s-800 s.
10. A cell culture device comprising a cell culture scaffold modified by the method of surface modification of a cell culture device according to any one of claims 1 to 9 to obtain a long-lasting hydrophilically modified surface.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112851995A (en) * | 2021-01-29 | 2021-05-28 | 苏州赛普生物科技有限公司 | Surface hydrophilic treatment method for cell culture dish |
| WO2021169600A1 (en) * | 2020-02-28 | 2021-09-02 | 广州洁特生物过滤股份有限公司 | Surface modification method for cell culture apparatus, and cell culture apparatus |
| CN114409947A (en) * | 2021-12-31 | 2022-04-29 | 洛阳富道生物科技有限公司 | Surface modification method of plastic product |
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| CN111171360A (en) * | 2020-02-28 | 2020-05-19 | 广州洁特生物过滤股份有限公司 | Cell culture apparatus surface modification method and cell culture apparatus |
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| CN112851995A (en) * | 2021-01-29 | 2021-05-28 | 苏州赛普生物科技有限公司 | Surface hydrophilic treatment method for cell culture dish |
| CN114409947A (en) * | 2021-12-31 | 2022-04-29 | 洛阳富道生物科技有限公司 | Surface modification method of plastic product |
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