CN111158075B - Watermark anti-counterfeiting super-surface device and design method thereof - Google Patents
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Abstract
本发明提供一种水印防伪超表面装置及其设计方法。该超表面由能够同时对红光和绿光响应的纳米砖单元结构组成。纳米砖单元结构对入射红绿线偏光等效为一个起偏器,能够有效调节入射线偏光中的红绿分量比例从而在近场形成一幅彩色图案(颜色在红绿之间);另外,巧妙利用马吕斯定律及其变式,当入射光为单色光时,通过旋转光路中的起偏器,能够在原单色图上叠加亮或暗的水印。本发明可应用于高分辨率图像显示、光学防伪、信息复用,且体积小、成本低、重量小、设计思路简单,非常适宜于在微型光电体系中应用。
The invention provides a watermark anti-counterfeiting metasurface device and a design method thereof. The metasurface consists of nanobrick unit structures capable of responding to both red and green light. The nanobrick unit structure is equivalent to a polarizer for the incident red and green polarized light, which can effectively adjust the ratio of the red and green components in the incident polarized light to form a color pattern in the near field (the color is between red and green); in addition, By clever use of Marius' law and its variants, when the incident light is monochromatic light, a bright or dark watermark can be superimposed on the original monochromatic image by rotating the polarizer in the light path. The invention can be applied to high-resolution image display, optical anti-counterfeiting, and information multiplexing, and is small in size, low in cost, light in weight, and simple in design idea, and is very suitable for application in micro-photoelectric systems.
Description
技术领域technical field
本发明属于微纳光学和偏振光学领域,具体涉及一种水印防伪超表面装置及其设计方法。The invention belongs to the fields of micro-nano optics and polarized optics, in particular to a watermark anti-counterfeiting metasurface device and a design method thereof.
背景技术Background technique
图像防伪是光学领域非常重要的一个方向。利用超表面图像水印防伪大多通过不同图像的变换来实现,但是这并不是真正的“水印”,因为原图像在变换过程中往往会消失,而不是在原图像上再叠加水印图案;另外,传统图像显示分辨率较低,图像面积较大且比较显眼,又由于没有相应的编码及解码过程,在应用于防伪时安全性较低。Image anti-counterfeiting is a very important direction in the field of optics. Most of the anti-counterfeiting watermarking using metasurface images is realized by the transformation of different images, but this is not a real "watermark", because the original image tends to disappear during the transformation process, instead of superimposing the watermark pattern on the original image; in addition, traditional images The display resolution is low, the image area is large and conspicuous, and because there is no corresponding encoding and decoding process, the security is low when applied to anti-counterfeiting.
发明内容SUMMARY OF THE INVENTION
针对传统图像防伪的不足,本发明结合偏振理论,通过设计银纳米砖阵列从而提供一种能够高效地实现水印防伪的超表面装置及其设计方法。Aiming at the deficiencies of traditional image anti-counterfeiting, the present invention provides a metasurface device capable of efficiently realizing watermark anti-counterfeiting and a design method thereof by designing a silver nano-brick array in combination with polarization theory.
本发明的目的之一在于提供一种实现水印防伪的超表面装置,所述超表面利用马吕斯定律I=I0cos2(θ)及其相关变式,转角进行优化,首次通过单一几何尺寸的纳米砖单元结构阵列,实现近场单色的水印图案与无水印图案显示以及彩色的水印图案。且本发明结构简单,易于加工。本发明在光学防伪、图像隐藏、高分辨率单色及彩色图像显示、信息复用等方面具有很好的应用潜力;One of the objectives of the present invention is to provide a metasurface device for realizing watermark anti-counterfeiting, the metasurface utilizes Marius' law I=I 0 cos 2 (θ) and its related variants, the rotation angle is optimized, and for the first time through a single geometry The nano-brick unit structure array of the size can realize near-field monochrome watermark pattern and watermark-free pattern display and color watermark pattern. In addition, the present invention has a simple structure and is easy to process. The invention has good application potential in optical anti-counterfeiting, image hiding, high-resolution monochrome and color image display, information multiplexing and the like;
本发明的目的之二在于提供一种实现水印防伪的超表面装置的设计方法,通过利用马吕斯定律的不同转角能够产生同一光强这一特性以及不同入射条件下光强的差异性,巧妙地实现了近场单色水印图案的叠加以及彩色带水印图案的显示;The second purpose of the present invention is to provide a design method of a metasurface device for realizing watermark anti-counterfeiting, which can generate the same light intensity and the difference of light intensity under different incident conditions by using different rotation angles of Marius' law. The superposition of near-field monochrome watermark patterns and the display of color watermark patterns are realized;
为实现上述目的,本发明的方案如下:For achieving the above object, scheme of the present invention is as follows:
第一方面,本发明提供一种实现水印防伪的超表面装置,其特征在于:In a first aspect, the present invention provides a metasurface device for realizing watermark anti-counterfeiting, characterized in that:
所述超表面由能够同时对红光和绿光响应的纳米砖形成纳米砖单元阵列,不同纳米砖单元结构之间的间隔为周期CS,不同位置的纳米砖单元对应不同的转角;The metasurface is formed by nanobricks capable of responding to red light and green light simultaneously to form a nanobrick unit array, the interval between different nanobrick unit structures is the period CS, and the nanobrick units at different positions correspond to different turning angles;
纳米砖单元结构对线偏光作用相当于起偏器;当入射红绿线偏光沿纳米砖长轴偏振时,红光将反射,绿光将透射;当入射红绿线偏光沿纳米砖短轴偏振时,绿光将反射,红光将透射;The nanobrick unit structure acts as a polarizer for linearly polarized light; when the incident red and green linearly polarized light is polarized along the long axis of the nanobrick, the red light will be reflected and the green light will be transmitted; when the incident red and green linearly polarized light is polarized along the short axis of the nanobrick , the green light will be reflected and the red light will be transmitted;
当入射光源是绿光时,依次通过一个偏振方向为0°的起偏器、所述水印防伪超表面和一个偏振方向为90°的检偏器时,将在样片表面观察到一幅单色连续灰度图案;将检偏器偏振方向转为135°,将看到单色灰度图案不变,但是在表面又叠加了一层防伪水印;When the incident light source is green light, passing through a polarizer with a polarization direction of 0°, the watermark anti-counterfeiting metasurface and an analyzer with a polarization direction of 90° in turn, a monochromatic image will be observed on the surface of the sample. Continuous grayscale pattern; turn the polarization direction of the analyzer to 135°, the monochrome grayscale pattern will remain unchanged, but a layer of anti-counterfeiting watermark is superimposed on the surface;
当入射光源为红绿双色光时,依次通过一个偏振方向为0°的起偏器、所述水印防伪超表面和一个偏振方向为0°的检偏器时,将在样片表面观察到一幅叠加了防伪水印且为彩色的图案;When the incident light source is red and green two-color light, a polarizer with a polarization direction of 0°, the watermark anti-counterfeiting metasurface and an analyzer with a polarization direction of 0° are sequentially passed through. Superimposed anti-counterfeiting watermark and color pattern;
所述偏振方向是相对于x轴而言;the polarization direction is relative to the x-axis;
第二方面,本发明提供一种如上述实现水印防伪的超表面装置的设计方法,其特征在于:包含以下步骤:In a second aspect, the present invention provides a method for designing a metasurface device for realizing watermark anti-counterfeiting as described above, characterized in that it comprises the following steps:
(1)根据选定的两种入射光波长,通过电磁仿真软件,当入射线偏光垂直照射纳米砖单元时,沿长轴偏振的红光反射效率高,绿光透射效率高;沿短轴偏振的红光透射效率高,绿光反射效率高为目标,优化出纳米砖单元结构的周期CS、纳米砖单元结构的宽度W,长度L,和高度H;(1) According to the selected two wavelengths of incident light, through electromagnetic simulation software, when the incident ray polarized light irradiates the nano-brick unit vertically, the reflection efficiency of red light polarized along the long axis is high, and the transmission efficiency of green light is high; With the goal of high red light transmission efficiency and high green light reflection efficiency, the period CS of the nano-brick unit structure, the width W, the length L, and the height H of the nano-brick unit structure are optimized;
(2)考虑单色绿光入射的情况,定义纳米砖的转角θ为纳米砖长轴和x轴的夹角,当起偏器偏振方向为0°,检偏器方向为90°;则反射绿光光强为I1=I0sin2(2θ),反射绿光光强I1为θ的函数,且周期为π/2,这意味着在0~π之间,根据这种入射情况下的单色目标图案,每个像素点的灰度可以有四个不同的转角作为候选转角;旋转检偏器至135°,则反射绿光光强为 观察光强I1和I2的函数图像,会发现0<θ<π/8时,I1≈I2;3π/8<θ<π/2时,I1<I2;7π/8<θ<π时,I1>I2。而对于光强I1而言,区间0<θ<π/8,3π/8<θ<π/2,7π/8<θ<π对应的强度正好是相等的,因此当入射情况改为第二种时,我们在希望叠加暗水印的区域选择转角范围7π/8<θ<π;在希望叠加亮水印的区域,选择转角范围3π/8<θ<π/2;在希望不叠加水印的区域,选择转角范围0<θ<π/8;由此实现单色光入射情况下,检偏器从90°转到135°时,能够在原图不变的基础上叠加亮与暗两种水印;于此同时,由于所设计的纳米砖能够对红绿光同时响应,当入射光为红绿光,且起检偏器均为0°时,样片表面能够观察到一幅颜色介于红绿之间的彩色图案;(2) Considering the incident of monochromatic green light, define the rotation angle θ of the nanobrick as the angle between the long axis of the nanobrick and the x-axis, when the polarization direction of the polarizer is 0° and the direction of the analyzer is 90°; then the reflection The green light intensity is I 1 =I 0 sin 2 (2θ), the reflected green light intensity I 1 is a function of θ, and the period is π/2, which means between 0 and π, according to this incident situation In the monochromatic target pattern below, the grayscale of each pixel can have four different rotation angles as candidate rotation angles; if the analyzer is rotated to 135°, the reflected green light intensity is Observe the function image of light intensities I 1 and I 2 , you will find that when 0<θ<π/8, I 1 ≈I 2 ; when 3π/8<θ<π/2, I 1 <I 2 ; 7π/8< When θ<π, I 1 >I 2 . For the light intensity I 1 , the intensities corresponding to the
(3)根据步骤(2)确定的银纳米砖阵列结构,采用光刻工艺制备水印防伪超表面;(3) according to the silver nano-brick array structure determined in step (2), a photolithography process is used to prepare a watermark anti-counterfeiting metasurface;
(4)当入射光为绿光,起偏器偏振方向为0°,检偏器方向为90°时,将在近场观察到一幅单色图案;将检偏器旋转至135°,将看到单色图案上叠加了亮和暗两种水印;将入射光切换为红绿光,检偏器旋转至0°,将看到一幅水印与背景颜色不同的图片;(4) When the incident light is green light, the polarization direction of the polarizer is 0°, and the direction of the analyzer is 90°, a monochromatic pattern will be observed in the near field; rotate the analyzer to 135°, and the You can see that the light and dark watermarks are superimposed on the monochrome pattern; switch the incident light to red and green light, rotate the analyzer to 0°, and you will see a picture with a watermark that is different from the background color;
本发明的优点及有益效果:Advantages and beneficial effects of the present invention:
本发明的水印防伪超表面能够通过检偏器偏振角度的变换实现真正的水印,即原图案不变,在此基础上叠加图案;此外,在双色入射光照射下,本发明还能实现彩色水印图案,且分辨率能够达到74000dpi,超过传统图像显示以及普通超表面彩色图案分辨率。具体为:The watermarking anti-counterfeiting metasurface of the present invention can realize real watermarking through the transformation of the polarization angle of the analyzer, that is, the original pattern remains unchanged, and the pattern is superimposed on this basis; in addition, the present invention can also realize color watermarking under the illumination of two-color incident light pattern, and the resolution can reach 74000dpi, which exceeds the resolution of traditional image display and ordinary metasurface color patterns. Specifically:
(1)所提供的水印防伪超表面在单色光入射情况下,通过旋转检偏器能够实现目标图案上水印的消失与重现,具有防伪功能;(1) The provided watermark anti-counterfeiting metasurface can realize the disappearance and reproduction of the watermark on the target pattern by rotating the analyzer under the incident of monochromatic light, and has anti-counterfeiting function;
(2)所提供的水印防伪超表面在红绿光入射情况下,能够实现彩色带水印图案;(2) The provided watermark anti-counterfeiting metasurface can realize a color watermark pattern under the incident of red and green light;
(3)和传统图像显示相比,本发明所提供的图案分辨率大大提升,且需要解码过程,不同入射条件下有不同图案,具有一定的保密性;(3) Compared with the traditional image display, the resolution of the pattern provided by the present invention is greatly improved, and a decoding process is required, and there are different patterns under different incident conditions, which has certain confidentiality;
(4)和传统图像显示器件相比,本发明近远场复用超表面具有体积小、成本低、重量小、能够实现动态调制的优点;(4) Compared with the traditional image display device, the near-far-field multiplexing metasurface of the present invention has the advantages of small size, low cost, low weight, and can realize dynamic modulation;
(5)具有超微尺寸结构,可广泛用于光子集成领域;(5) It has an ultra-micro-sized structure and can be widely used in the field of photonic integration;
(6)金属纳米砖阵列结构可沿用标准光刻工艺加工,工艺简单;(6) The metal nano-brick array structure can be processed by the standard photolithography process, and the process is simple;
(7)为图像显示和加密的设计和制备提供了一种新思路,具有极大的参考价值和应用前景。(7) It provides a new idea for the design and preparation of image display and encryption, which has great reference value and application prospect.
附图说明Description of drawings
图1是实施例1中水印防伪超表面的结构单元示意图,转角θ定义为纳米砖长轴和x轴的夹角;1 is a schematic diagram of the structural unit of the watermark anti-counterfeiting metasurface in Embodiment 1, and the rotation angle θ is defined as the angle between the long axis of the nanobrick and the x axis;
图2是实施例1中部分银纳米砖阵列结构的三维结构示意图;Fig. 2 is the three-dimensional structure schematic diagram of some silver nanobrick array structures in Example 1;
图3是实施例1中银纳米砖阵列对入射光的仿真结果图,其中x轴为波长,y轴为反射效率,包括长轴反射效率和短轴反射效率。3 is a graph of the simulation result of the silver nanobrick array on incident light in Example 1, where the x-axis is the wavelength and the y-axis is the reflection efficiency, including the long-axis reflection efficiency and the short-axis reflection efficiency.
图4是实施例1中对近场图案进行解码的光路示意图;4 is a schematic diagram of an optical path for decoding a near-field pattern in Embodiment 1;
图5是单色光入射时的纳米印刷图;图(a)为检偏器90°时的单色图;图(b)为检偏器135°时叠加水印的图案;Fig. 5 is the nano-printing diagram when the monochromatic light is incident; Fig. (a) is the monochromatic diagram when the analyzer is 90°; Fig. (b) is the pattern of superimposing watermark when the analyzer is 135°;
图6是双色光入射时的彩色带水印图案;Fig. 6 is the color band watermark pattern when two-color light is incident;
图中:1、纳米砖;2、衬底;L、纳米砖长轴尺寸;W、纳米砖短轴尺寸;H、纳米砖高度,In the figure: 1. Nano-brick; 2. Substrate; L, Nano-brick long-axis dimension; W, Nano-brick short-axis dimension; H, Nano-brick height, CS、纳米砖的间距。CS, nano-brick spacing.
具体实施方式Detailed ways
以下结合附图和具体实施例对本发明作进一步地详细说明。The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
本发明实施例提供一种实现水印防伪的超表面,该超表面由透明基底及刻蚀在基底表面的纳米单元阵列构成,纳米单元阵列包括多个纳米单元结构(本实施例中所述纳米单元结构为银纳米砖),通过设计实现单色图像水印的消失与再现以及彩色带水印图像的显示。The embodiment of the present invention provides a metasurface for realizing watermark anti-counterfeiting. The metasurface is composed of a transparent substrate and a nano-unit array etched on the surface of the substrate. The nano-unit array includes a plurality of nano-unit structures (the nano-units described in this embodiment) The structure is silver nano-bricks), and the disappearance and reproduction of monochrome image watermarks and the display of color watermarked images are realized through design.
(1)图1~2示出了的银纳米砖阵列结构,包括二层,从上至下依次为银纳米砖1,衬底2。其中,银纳米砖阵列1由银纳米砖单元结构周期性排列构成,银纳米砖为长方体,且其长宽高均为亚波长尺寸。单个银纳米砖单元的结构见图1。本实施例中,衬底2为二氧化硅衬底。(1) The silver nanobrick array structure shown in FIGS. 1 to 2 includes two layers, which are silver nanobricks 1 and
作为实施例,选取510nm和620nm作为工作波长,采用现有的CSTSTUDIO SUITE电磁仿真工具,在工作波长下优化银纳米砖单元的结构,使得入射线偏光沿纳米砖长轴偏振时,红光反射效率最高;入射线偏光沿纳米砖短轴偏振时,绿光反射效率最高;通过转动本纳米砖阵列结构,可以实现反射光从红光到绿光的变化。本实施例中,优化后的银纳米砖长L=140nm,宽W=85nm,厚H=70nm,单元结构内,CS=340nm;仿真得到的偏振效率图如图3所示,沿长轴偏振的红光反射效率达到90%,沿短轴偏振的绿光反射效率达到70%;As an example, 510nm and 620nm are selected as the working wavelengths, and the existing CSTSTUDIO SUITE electromagnetic simulation tool is used to optimize the structure of the silver nanobrick unit at the working wavelength, so that when the incident ray polarized light is polarized along the long axis of the nanobrick, the red light reflection efficiency When the incident ray polarized light is polarized along the short axis of the nano-brick, the reflection efficiency of green light is the highest; by rotating the nano-brick array structure, the reflected light can be changed from red light to green light. In this embodiment, the optimized silver nano-brick has a length L=140nm, a width W=85nm, a thickness H=70nm, and within the unit structure, CS=340nm; the polarization efficiency diagram obtained by simulation is shown in Figure 3, and the polarization along the long axis is shown in Figure 3. The reflection efficiency of red light reaches 90%, and the reflection efficiency of green light polarized along the short axis reaches 70%;
(2)考虑单色绿光入射的情况,定义纳米砖的转角θ为纳米砖长轴和x轴的夹角,当起偏器偏振方向为0°,检偏器方向为90°;则反射绿光光强为I1=I0sin2(2θ),反射绿光光强I1为θ的函数,且周期为π/2,这意味着在0~π之间,根据这种入射情况下的单色目标图案,每个像素点的灰度可以有四个不同的转角作为候选转角;旋转检偏器至135°,则反射绿光光强为 观察光强I1和I2的函数图像,会发现0<θ<π/8时,I1≈I2;3π/8<θ<π/2时,I1<I2;7π/8<θ<π时,I1>I2。而对于光强I1而言,区间0<θ<π/8,3π/8<θ<π/2,7π/8<θ<π对应的强度正好是相等的,因此当入射情况改为第二种时,我们在希望叠加暗水印的区域选择转角范围7π/8<θ<π;在希望叠加亮水印的区域,选择转角范围3π/8<θ<π/2;在希望不叠加水印的区域,选择转角范围0<θ<π/8;由此实现单色光入射情况下,检偏器从90°转到135°时,能够在原图不变的基础上叠加亮与暗两种水印;于此同时,由于所设计的纳米砖能够对红绿光同时响应,当入射光为红绿光,且起检偏器均为0°时,样片表面能够观察到一幅颜色介于红绿之间的彩色图案;(2) Considering the incident of monochromatic green light, define the rotation angle θ of the nanobrick as the angle between the long axis of the nanobrick and the x-axis, when the polarization direction of the polarizer is 0° and the direction of the analyzer is 90°; then the reflection The green light intensity is I 1 =I 0 sin 2 (2θ), the reflected green light intensity I 1 is a function of θ, and the period is π/2, which means between 0 and π, according to this incident situation In the monochromatic target pattern below, the grayscale of each pixel can have four different rotation angles as candidate rotation angles; if the analyzer is rotated to 135°, the reflected green light intensity is Observe the function image of light intensities I 1 and I 2 , you will find that when 0<θ<π/8, I 1 ≈I 2 ; when 3π/8<θ<π/2, I 1 <I 2 ; 7π/8< When θ<π, I 1 >I 2 . For the light intensity I 1 , the intensities corresponding to the
(3)根据步骤(2)确定的银纳米砖阵列结构,采用光刻工艺制备水印防伪超表面;(3) according to the silver nano-brick array structure determined in step (2), a photolithography process is used to prepare a watermark anti-counterfeiting metasurface;
(4)光路图如图4所示;当入射光为绿光,起偏器偏振方向为0°,检偏器方向为90°时,将在近场观察到一幅单色图案;将检偏器旋转至135°,将看到单色图案上叠加了亮和暗两种水印,如图5所示;将入射光切换为红绿光,检偏器旋转至0°,将看到一幅水印与背景颜色不同的图片,如图6所示;(4) The optical path diagram is shown in Figure 4; when the incident light is green light, the polarization direction of the polarizer is 0°, and the direction of the analyzer is 90°, a monochromatic pattern will be observed in the near field; When the polarizer is rotated to 135°, two watermarks, bright and dark, are superimposed on the monochromatic pattern, as shown in Figure 5; when the incident light is switched to red and green light, the analyzer is rotated to 0°, and a watermark will be seen. A picture with different watermark and background color, as shown in Figure 6;
以上所述,仅为本发明较佳的具体实施方式,但本发明保护的范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内所做的任何修改,等同替换和改进等,均应包含在发明的保护范围之内。The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited to this. Any modifications made by any person skilled in the art within the technical scope disclosed by the present invention are equivalent Substitutions and improvements, etc., should all be included within the protection scope of the invention.
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