CN111146315B - Fully-inorganic packaged inverted UV-LED device and manufacturing method thereof - Google Patents
Fully-inorganic packaged inverted UV-LED device and manufacturing method thereof Download PDFInfo
- Publication number
- CN111146315B CN111146315B CN202010100540.2A CN202010100540A CN111146315B CN 111146315 B CN111146315 B CN 111146315B CN 202010100540 A CN202010100540 A CN 202010100540A CN 111146315 B CN111146315 B CN 111146315B
- Authority
- CN
- China
- Prior art keywords
- led
- epitaxial wafer
- quartz glass
- array
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 235000012431 wafers Nutrition 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 230000005496 eutectics Effects 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 41
- 238000005520 cutting process Methods 0.000 claims abstract description 22
- 238000010438 heat treatment Methods 0.000 claims abstract description 22
- 238000000227 grinding Methods 0.000 claims abstract description 18
- 238000003466 welding Methods 0.000 claims abstract description 8
- 238000006748 scratching Methods 0.000 claims abstract description 5
- 230000002393 scratching effect Effects 0.000 claims abstract description 5
- 239000013078 crystal Substances 0.000 claims abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 107
- 239000010410 layer Substances 0.000 claims description 81
- 238000005530 etching Methods 0.000 claims description 29
- 238000001704 evaporation Methods 0.000 claims description 24
- 229920002120 photoresistant polymer Polymers 0.000 claims description 24
- 238000005498 polishing Methods 0.000 claims description 24
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- 229910052698 phosphorus Inorganic materials 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000004544 sputter deposition Methods 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 11
- 238000009616 inductively coupled plasma Methods 0.000 claims description 11
- 229910052681 coesite Inorganic materials 0.000 claims description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229910052682 stishovite Inorganic materials 0.000 claims description 8
- 229910052905 tridymite Inorganic materials 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 239000011241 protective layer Substances 0.000 claims description 6
- 238000007731 hot pressing Methods 0.000 claims description 5
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 239000005350 fused silica glass Substances 0.000 claims description 2
- 238000007711 solidification Methods 0.000 claims description 2
- 230000008023 solidification Effects 0.000 claims description 2
- 238000009987 spinning Methods 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 4
- 239000010949 copper Substances 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 239000010439 graphite Substances 0.000 description 8
- 229910002804 graphite Inorganic materials 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000010453 quartz Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 229910000833 kovar Inorganic materials 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 229910017750 AgSn Inorganic materials 0.000 description 2
- 229910015844 BCl3 Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 230000004224 protection Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 230000001954 sterilising effect Effects 0.000 description 2
- 238000004659 sterilization and disinfection Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- 230000006750 UV protection Effects 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000004887 air purification Methods 0.000 description 1
- 239000010426 asphalt Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000007499 fusion processing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a method for preparing an all-inorganic packaged flip UV-LED device, which comprises the following steps: preparing a UV-LED epitaxial wafer; thinning and scratching the UV-LED epitaxial wafer; grinding and thinning the UV-LED epitaxial wafer, placing the UV-LED epitaxial wafer on the surface of a blue film, carrying out invisible cutting on an MESA cutting channel by using laser, and then carrying out splitting and film expansion to obtain a UV-LED epitaxial wafer array formed by arranging single UV-LED epitaxial wafers; preparing a cover plate with a groove array on the surface; assembling the single UV-LED epitaxial wafer array in the groove array and welding the single UV-LED epitaxial wafer array with the cover plate; preparing an inverted UV-LED chip array and a substrate; fixing the cover plate and the substrate while fixing the crystal; and cutting to obtain the single totally-inorganic packaged flip UV-LED device. According to the method, eutectic bonding is completed at one time, so that the influence of secondary heating on the inverted UV-LED chip is reduced, and the electrode bonding reliability of the UV-LED chip is improved. The invention also provides an all-inorganic packaged inverted UV-LED device, and the inverted UV-LED chip is directly embedded in the cover plate, so that the device has good heat dissipation and light efficiency.
Description
Technical Field
The invention belongs to the technical field of LED packaging, and particularly relates to an all-inorganic packaged inverted UV-LED device and a manufacturing method thereof.
Background
The traditional ultraviolet light source (UV) adopts mercury vapor discharge to generate ultraviolet rays by utilizing the excitation state of mercury, and has the defects of high power consumption, large heat productivity, short service life, slow reaction, potential safety hazard and the like. The emerging ultraviolet light source adopts the LED light-emitting principle, is called as 'UV-LED', and has the following advantages compared with the traditional mercury lamp ultraviolet light source: 1. the ultraviolet LED is an all-solid-state lighting device, has a stable mechanical structure, is portable, is impact-resistant, has a small working voltage, and does not need a complex driving circuit; 2. the ultraviolet LED is ready to use when the response rate is high, complex operations such as preheating and the like are not needed, and the use is convenient; 3. the traditional mercury lamp emits light in multiple spectral lines, the ultraviolet LED has a single light-emitting peak, and the light-emitting wavelength is continuously adjustable; 4. the ultraviolet LED material does not contain substances harmful to the environment, and meanwhile, the ultraviolet LED saves energy by up to 70 percent, thereby being a real environment-friendly energy-saving light source; 5. the service life of the ultraviolet LED is more than 5000 hours, which far exceeds the service life of a mercury lamp. The UV-LED includes all electromagnetic radiation wavelengths between 100nm and 420 nm, and the application market can be currently divided into UVA (320 nm to 420 nm, also referred to as "long-wave ultraviolet"), UVB (275 nm to 320nm, also referred to as "medium-wave ultraviolet") and UVC (100 nm to 275nm, also referred to as "short-wave ultraviolet") bands according to the emission wavelength thereof, and is widely used in medical applications, printing, ultraviolet air purification, high-resolution optical applications, phosphor reflection, UV gel curing, special lighting, and the like.
The use of UV-LEDs in real environments often faces a number of challenges, among which reliability and heat dissipation issues are particularly acute. To improve the reliability of UV-LEDs, it is a very efficient way to improve from the package structure. At present, low-power medium-low-end UV-LED chips such as ultraviolet sterilization, ultraviolet curing and the like are mainly packaged by adopting a visible light LED packaging mode, namely, resin organic materials are adopted for packaging, and the characteristics of poor UV resistance, large thermal expansion coefficient and high moisture and oxygen permeability of the organic materials can cause the disadvantages of ultraviolet radiation induced colloid yellowing light source attenuation, thermal stress embrittlement and moisture stress impurity invasion, so that the reliability of the UV-LED can be greatly reduced. The photoelectric conversion efficiency of the UV-LED is low, about 70% of energy is converted into heat energy, particularly the conversion efficiency of the UVC-LED is lower, about 90% of energy is converted into heat energy, and therefore materials with higher thermal conductivity are selected for the UV-LED package.
At present, a copper-clad aluminum nitride ceramic support is adopted for packaging in the UV-LED industry, the support contains a metal dam, a cavity is arranged inside the support, most of the cavity is filled with air, the air refractive index is 1, the light emitted by a UV-LED chip is subjected to total reflection loss through the cavity, the air heat conductivity is extremely poor, so that the UV-LED mainly radiates by depending on the bottom surface during working, the filling material in the cavity needs to be optimized, the multi-surface heat radiation of the UV-LED chip is facilitated, and the reliability of a UV-LED device is improved.
In addition, the UV-LED chip is supported by the copper-clad aluminum nitride ceramic support, and then the pure quartz lens is used for covering and sealing, so that the UV-LED chip is usually heated once when being fixed on the substrate, and the quartz lens and the copper-clad aluminum nitride ceramic support are connected, so that the UV-LED chip is heated for many times inevitably, and the reliability of the UV-LED chip is influenced.
Disclosure of Invention
In order to solve the above problems, the present invention provides a method for preparing an all inorganic encapsulated flip-chip UV-LED device, the method comprising the steps of:
preparing a UV-LED epitaxial wafer: growing a UV-LED epitaxial wafer by using MOCVD (metal organic chemical vapor deposition), and etching the UV-LED epitaxial wafer by using an inductively coupled plasma etching machine to form an MESA cutting channel and expose an N-GaN layer;
thinning and scratching of the UV-LED epitaxial wafer: grinding and thinning the UV-LED epitaxial wafer, placing the UV-LED epitaxial wafer on the surface of a blue film, carrying out invisible cutting on the MESA cutting channel by using laser, and then splitting and expanding the wafer to obtain a UV-LED epitaxial wafer array formed by arranging single UV-LED epitaxial wafers;
preparing quartz glass with a groove array on the surface, wherein the size of the groove is consistent with that of the thinned and scratched UV-LED epitaxial wafer;
assembling and welding: heating the quartz glass for the first time, placing the UV-LED epitaxial wafer in a groove on the surface of the quartz glass, cooling to room temperature, heating for the second time, applying pressure to the quartz glass and the UV-LED epitaxial wafer, and slowly annealing to obtain the quartz glass embedded with the UV-LED epitaxial wafer array;
preparing an inverted UV-LED chip array: manufacturing an ITO layer, a first reflecting layer and an P, N electrode on the UV-LED epitaxial wafer array embedded in the quartz glass groove to obtain quartz glass embedded with an inverted UV-LED chip array;
manufacturing a substrate: manufacturing a substrate by using a ceramic material, and manufacturing a pad array electrically connected with the inverted UV-LED chip array on the substrate;
and (3) crystal solidification: sequentially manufacturing a second reflecting layer and a first eutectic layer on the surface of the quartz glass embedded with the inverted UV-LED chip array around the inverted UV-LED chip electrode, manufacturing a second eutectic layer around the substrate bonding pad at a position corresponding to the first eutectic layer, aligning the inverted UV-LED chip electrode with the substrate bonding pad, aligning the first eutectic layer with the second eutectic layer, performing hot-pressing eutectic, and cooling to obtain an all-inorganic encapsulated inverted UV-LED device array;
cutting: and cutting the fully-inorganic packaged inverted UV-LED device array to obtain a single fully-inorganic packaged inverted UV-LED device.
Further, the preparation method of the quartz glass with the groove array on the surface comprises the following specific processes: depositing a quartz glass sheet with the thickness of 2-3 mm, etching the quartz glass sheet by adopting ICP (inductively coupled plasma), forming a groove with the same size as the UV-LED epitaxial wafer, and grinding and polishing the groove.
Further, the grinding is carried out by using a plane precision polishing machine, an asphalt polishing die and cerium oxide polishing powder, and the grinding time is not less than 2 min.
Further, the polishing includes rough polishing and finish polishing.
Further, the preparation method of the quartz glass with the groove array on the surface comprises the following specific processes: and adopting a mold with an array bulge, wherein the size of the bulge is consistent with that of the UV-LED epitaxial wafer, pouring fused quartz, and cooling to obtain integrally-formed quartz glass with a groove array on the surface.
Further, the first heating temperature is 280-320 ℃, and the second heating temperature is not lower than 1300 ℃.
Further, the specific steps of preparing the flip UV-LED chip array are as follows:
evaporating or sputtering an ITO layer on the surface of the quartz glass embedded with the UV-LED epitaxial wafer array, spinning photoresist on the surface of the ITO layer, covering a graphical mask plate on the photoresist, and exposing, developing and etching to expose an N-GaN area;
evaporating a first reflecting layer;
evaporation SiO2A protective layer etching the SiO2Protective layer, vapor deposition P, N electrode.
Furthermore, the thickness of the ITO layer is 1-3 μm, the thickness of the first reflecting layer is 0.3-0.5 μm, and the thickness of the P, N electrode is 3-5 μm.
Furthermore, the applied pressure is 300-500 g, the heating temperature is 300-320 ℃, and the hot pressing time is 100-500 ms.
The invention also provides an all-inorganic packaged flip UV-LED device which is prepared according to the method and comprises quartz glass, a substrate and a flip UV-LED chip embedded in the quartz glass, wherein the flip UV-LED chip is electrically connected with the substrate, and the quartz glass is fixedly connected with the substrate through a eutectic layer.
The preparation method provided by the invention has the following beneficial effects:
1. a primary eutectic bonding process is omitted, the thermal influence of secondary heating on the LED chip is reduced, and the electrode bonding reliability of the UV-LED chip is improved;
2. the method provided by the invention can be used for manufacturing the UV-LED device with smaller size, and is very convenient for integration;
3. the method provided by the invention combines the chip manufacturing and packaging processes, can simplify the process, save the cost and improve the production efficiency.
The fully-inorganic packaged flip UV-LED device obtained by the method provided by the invention has the following beneficial effects:
1. the total reflection loss can be greatly reduced, and the light emission of the device is obviously increased;
2. the heat dissipation effect is obviously enhanced.
Drawings
FIG. 1 is a flow chart of a method for fabricating an all inorganic encapsulated flip-chip UV-LED device of example 1;
FIG. 2 is a schematic view of the assembly and fusion process;
FIG. 3 is a top view of quartz glass with an array of flip-chip UV-LED chips embedded therein;
FIG. 4 is a top view of the substrate;
FIG. 5 is a discrete device of example 1 with a quartz lens surrounding a flip-chip UV-LED chip;
FIG. 6 is a cross-sectional view of an all inorganic encapsulated UV-LED device of example 1;
FIG. 7 is a flow chart of a method for fabricating an all inorganic encapsulated flip-chip UV-LED device of example 2;
FIG. 8 is a discrete device of example 2 in which a quartz lens surrounds a flip UV-LED chip;
FIG. 9 is a cross-sectional view of an all inorganic encapsulated UV-LED device of example 2;
1-quartz glass; 2-a groove; 3-UV-LED epitaxial wafer; 4-stone grinding disc; 501-rectangular quartz glass; 502-semicircular quartz glass; 601-a first eutectic layer; 602-a second reflective layer; 603-flip UV-LED chip electrodes; 7-a substrate; 701-a second eutectic layer; 702-a pad; 703-through holes.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example 1
A method of making an all inorganic encapsulated flip-chip UV-LED device, as shown in fig. 1, comprising the steps of:
s01 preparation of UV-LED epitaxial wafer
Growing a UV-LED epitaxial wafer capable of emitting UV wave band light by using MOCVD, etching an MESA cutting channel to a sapphire substrate by using an inductively coupled plasma etching machine, etching to expose N-GaN by using the inductively coupled plasma etching machine, wherein etching gases are Cl2/BCl3Mixing the gas;
thinning and scratching of S02 UV-LED epitaxial wafer
And (3) roughly grinding the substrate surface of the UV-LED epitaxial wafer by using a grinder, then adding grinding liquid for fine grinding, and thinning the epitaxial wafer to 400 mu m. And placing the UV-LED epitaxial wafer on a blue film, scribing the UV-LED epitaxial wafer by a laser SD (invisible cutting) process, and then performing three-point splitting by using a splitting machine to obtain a single UV-LED epitaxial wafer array. And (4) expanding the blue film by using a film expanding machine, and increasing the distance between the adjacent single UV-LED epitaxial wafers.
S03, preparing quartz glass with a surface provided with a groove array, wherein the size of the groove is consistent with that of the UV-LED epitaxial wafer obtained in the step S02.
Mixing SiCl4Heating to 50 deg.C in a vaporizer to volatilize, carrying with high purity hydrogen gas into a feed tube in a vapor deposition reactor, reacting with oxyhydrogen flame at the outlet of a burner, and burning to form glassy SiO at 160 deg.C2And depositing rectangular quartz glass 1 with the thickness of about 2 mm-3 mm under the conditions that the deposition target distance is 220mm, the deposition target rotating speed is 10r/min and the deposition rate is 80 g/h.
Heating the obtained quartz glass sheet 1 to 1500 ℃ at the speed of 500 ℃/h, keeping for 20min, then cooling to 950 ℃ at the speed of 3 ℃/min, and turning off a power supply to naturally cool to room temperature along with the furnace. Adopting ICP etching mode, wherein etching gas is CF4And etching a rectangular groove array on the quartz glass sheet, wherein the length, width and height of the rectangular groove array are consistent with those of the UV-LED epitaxial wafer obtained in the step S02, and the height of the rectangular groove array is 350 micrometers.
Grinding and polishing 5 inner surfaces of the rectangular groove, wherein the specific process comprises the following steps: grinding for 2min with plane precision polisher, pitch polishing mold and cerium oxide polishing powder with average particle size of 60nm, and grinding with plane precision polisher, polyurethane polishing film and alkaline polishing solution (SiO 20 wt%) with average particle size of 30nm2Hydrosol, alkaline agent and surfactant) for 2min, and polishing with a planar precision polishing machine, a fiber polishing film and an alkaline polishing solution (SiO 20 wt%) with an average particle diameter of 30nm2Hydrosol, alkaline agent and surfactant) for 2min to make the surface roughness of the groove less than 1 nm.
S04 fitting and welding
Referring to fig. 2, the quartz glass 1 with the array of grooves 2 on the surface obtained in step S03 and the blue film carrying the array of UV-LED epitaxial wafers 3 obtained in step S02 are placed on different carrying disks of the eutectic machine, the carrying disk carrying the quartz glass 1 is heated to 300 ℃ for the first time and is kept warm, and based on the principle of thermal expansion and cold contraction, the quartz glass 1 is expanded due to the uniform thermal atomic distance, so the volume of the grooves 2 is expanded. And (3) correspondingly placing the substrate surface of the normal-temperature UV-LED epitaxial wafer 3 on the blue film of the other carrier disc in the groove 2 of the quartz glass one by using a welding head of an eutectic machine, wherein the substrate surface faces towards the quartz glass 1. And taking out the quartz glass 1 bearing the UV-LED epitaxial wafer after the completion and cooling to room temperature.
Putting quartz glass bearing the UV-LED epitaxial wafer into a heating furnace graphite plate 4, covering a pressurizing graphite plate 4 on the upper surface, wherein the mass of the pressurizing graphite plate 4 is 7 kg-9 kg, adjusting the furnace temperature to 1300 ℃ at 50 ℃/min after vacuumizing in the furnace, keeping the temperature of the quartz glass 1 at the softening point for 3min, then heating to 1420 ℃ at 5 ℃/min, keeping the temperature for 10min, wherein the mass of the pressurizing graphite plate 4 is pressed on the P-GaN surface of the UV-LED epitaxial wafer 3, and the P-GaN surface of the UV-LED epitaxial wafer 3 is subjected to 1.2x104Pa (for example, 4-inch sheet) is closely adhered to the softened silica glass 1. Then slowly annealing for 4 times at 1420-1300 deg.C, 1300-960 deg.C, 960-470 deg.C, 470 deg.C to normal temperature to reduce thermal stress, with an annealing speed of 15 deg.C/min and an interval time of 10min each time. And obtaining the quartz glass embedded with the UV-LED epitaxial wafer array, wherein the surface of the UV-LED epitaxial wafer is P-GaN, and the surface of the P-GaN is flush with the surface of the quartz glass.
S05 preparation of flip UV-LED chip array
And (3) evaporating or sputtering ITO on the surface of the quartz glass sheet, wherein the thickness is 1-3 mu m. And (3) spin-coating photoresist on the surface of the ITO, covering the patterned mask on the photoresist, exposing and developing, removing the photoresist of the N-GaN region on the surface of each UV-LED epitaxial wafer, and etching the ITO in the N-GaN region by ITO etching liquid to expose the N-GaN region.
Evaporating a first reflecting layer, wherein the material is Ag, the thickness is 0.3-0.5 mu m, and metal is stripped by adopting a lift-off process;
evaporation SiO2Protective layer, etching SiO2The position of the P, N electrode to be evaporated is exposed. Coating photoresist on the front surface, covering a patterned mask on the photoresist, exposing and developing to remove the photoresist at the position of P, N electrode to be evaporated, evaporating P, N electrode, which is made of Au, AuSn, SnAgCu, AgSn and the like, and has the thickness of 3-5 μm, and stripping the metal except P, N electrode by lift-off process until reaching the final productThis completes the chip process to obtain quartz glass embedded with an array of flip-chip UV-LED chips, as shown in fig. 3. Wherein, one side of the electrode 603 of the inverted UV-LED chip protrudes 3.3-5.5 μm from the surface of the quartz glass, and the protruding thickness is mainly composed of the Ag reflecting layer and the metal electrode.
Sequentially manufacturing a first eutectic layer 601 and a second reflecting layer 602 on the surface of quartz glass around the electrodes of the flip-chip UV-LED chip: coating photoresist on the bottom surface of quartz glass, covering a patterned mask, exposing and developing, removing the photoresist at a position 150-250 mu m away from the edge of the quartz glass, sputtering 1 mu m of kovar alloy, evaporating 4 mu m of kovar alloy and 2 mu m of gold-tin alloy as a first eutectic layer 601, and stripping off the metal of the amorphous layer by lift-off process; similarly, coating photoresist on the bottom surface of the quartz glass sheet, covering a patterned mask, exposing and developing, removing the photoresist in the area between the first eutectic layer and the inverted UV-LED chip, sputtering Au with the thickness of 0.3 μm to be used as a second reflecting layer 602, and stripping the metal of the non-reflecting layer by lift-off process;
forming an array of individual devices (fig. 5) with a single planar quartz lens 501 surrounding a single flip-chip UV-LED chip;
s06 manufacturing a substrate
As shown in FIG. 4, the substrate 7 is made of an aluminum nitride ceramic material and has a thickness of 0.5 mm.
(1) Forming a through hole 703 on the substrate 7 by using a laser (laser) mode, wherein the size of the through hole 703 is consistent with that of the electrode 603 of the inverted UV-LED chip, evaporating a copper material to fill the through hole 703 to be flush with the surface of the substrate 7 to obtain a vertical copper heat sink structure, and evaporating an Au layer of 2 microns above a copper layer of the through hole as an eutectic layer corresponding to the surface of the electrode 603 of the inverted UV-LED chip;
(2) sputtering a Cu layer with the thickness of 0.5 mu m on the edge of the upper surface of the obtained substrate 7, evaporating a Ni layer with the thickness of 0.1-0.3 mu m and an Au layer with the thickness of 0.3-1 mu m to form a second eutectic layer 701 corresponding to the first eutectic layer of quartz glass;
(3) sputtering a Cu layer with the thickness of 50 mu m on the lower surface of the obtained substrate, and then evaporating a Cu layer with the thickness of 150 mu m, a Ni layer with the thickness of 3 mu m and an Au layer with the thickness of 0.05 mu m to form a substrate bottom bonding pad 702;
(4) and soaking the substrate 7 in ultrasonic alcohol for 5min to remove pollutants possibly existing on the surface and drying by flushing water.
S07 die bonding
Placing a substrate on a carrying disc, heating the carrying disc for carrying the substrate to the eutectic temperature of 300-320 ℃, aligning the quartz glass embedded with the inverted UV-LED chip with the substrate, enabling the electrode of the inverted UV-LED chip to correspond to the through hole of the substrate, enabling the first eutectic layer to correspond to the second eutectic layer, simultaneously heating to the eutectic temperature of 300-320 ℃, applying pressure of 300-500 g, and carrying out hot pressing for 100-500 ms, thereby completing the eutectic bonding of the inverted UV-LED chip array and the substrate as well as the quartz glass and the substrate.
S08 cutting
And cutting the fully inorganic packaged flip UV-LED device array obtained in the step S07 by using a water jet to obtain a single fully inorganic packaged flip UV-LED device, as shown in FIG. 6.
Example 2
A method of making an all inorganic encapsulated flip-chip UV-LED device, as shown in fig. 7, comprising the steps of:
s01 manufacturing a substrate
As shown in FIG. 4, the substrate 7 is made of alumina ceramic material and has a thickness of 0.5 mm.
(1) Forming a through hole 703 on the substrate 7 by using a laser (laser) mode, wherein the size of the through hole 703 is consistent with that of the electrode 603 of the inverted UV-LED chip, evaporating a copper material to fill the through hole 703 to be flush with the surface of the substrate 7 to obtain a vertical copper heat sink structure, and evaporating an Au layer of 2 microns above a copper layer of the through hole as an eutectic layer corresponding to the surface of the electrode 603 of the inverted UV-LED chip;
(2) sputtering a Cu layer with the thickness of 0.5 mu m on the edge of the upper surface of the obtained substrate 7, evaporating a Ni layer with the thickness of 0.1-0.3 mu m and an Au layer with the thickness of 0.3-1 mu m to form a second eutectic layer 701 corresponding to the first eutectic layer of quartz glass;
(3) sputtering a Cu layer with the thickness of 50 mu m on the lower surface of the obtained substrate, and then evaporating a Cu layer with the thickness of 150 mu m, a Ni layer with the thickness of 3 mu m and an Au layer with the thickness of 0.05 mu m to form a substrate bottom bonding pad 702;
(4) and soaking the substrate 7 in ultrasonic alcohol for 5min to remove pollutants possibly existing on the surface and drying by flushing water.
S02 preparation of silica glass having a groove array on the surface:
and pouring molten quartz by using a mold with a protrusion array, wherein the height of the protrusion is 250 mu m, and the length and the width of the protrusion are 254 x 508 mu m, and cooling to obtain the integrally formed quartz glass with the groove array on the surface.
S03 preparation of UV-LED epitaxial wafer
Growing a 4-inch UV-LED epitaxial wafer capable of emitting UV wave band light by using MOCVD, etching an MESA cutting channel to a sapphire substrate by using an inductively coupled plasma etching machine, etching to expose N-GaN by using the inductively coupled plasma etching machine, wherein etching gases are Cl2/BCl3Mixing the gas;
thinning and scratching of S04 UV-LED epitaxial wafer
And (3) roughly grinding the substrate surface of the UV-LED epitaxial wafer by using a grinder, then adding grinding liquid for fine grinding, and thinning the epitaxial wafer to 250 mu m. And placing the UV-LED epitaxial wafer on a blue film, scribing the UV-LED epitaxial wafer by a laser SD (invisible cutting) process, and then performing three-point splitting by using a splitting machine to obtain a single UV-LED epitaxial wafer array. And (4) expanding the blue film by using a film expanding machine, and increasing the distance between the adjacent single UV-LED epitaxial wafers.
S05 fitting and welding:
and (3) putting the quartz glass with the groove 2 array on the surface obtained in the step (S02) and the blue film for bearing the UV-LED epitaxial wafer array obtained in the step (S04) on different carrying discs of the eutectic machine, heating the carrying disc for bearing the quartz glass to 300 ℃ for the first time, and preserving heat, wherein based on the principle of thermal expansion and cold contraction, the quartz glass expands due to the fact that the distance between atoms is uniformly heated, and therefore the volume of the groove is expanded. And correspondingly placing the normal-temperature UV-LED epitaxial wafer substrate on the blue film of the other carrier disc in the groove of the quartz glass one by one with the surface facing the quartz glass by using a welding head of an eutectic machine. And taking out the quartz glass bearing the UV-LED epitaxial wafer and cooling to room temperature.
Putting quartz glass bearing the UV-LED epitaxial wafer into a graphite plate of a heating furnace, covering a pressurizing graphite plate on the upper surface, wherein the mass of the pressurizing graphite plate is 7 kg-9 kg, adjusting the furnace temperature to 1300 ℃ at 50 ℃/min after vacuumizing in the furnace,the quartz glass reaches the softening point, the temperature is kept for 3min, then the temperature is raised to 1420 ℃ at the speed of 5 ℃/min, the temperature is kept for 10min, the pressure graphite plate is pressed on the P-GaN surface of the UV-LED epitaxial wafer in quality, and the P-GaN surface of the UV-LED epitaxial wafer is subjected to the condition of 1.2x104Pa is pressed against the softened quartz glass. Then slowly annealing for 4 times at 1420-1300 deg.C, 1300-960 deg.C, 960-470 deg.C, 470 deg.C to normal temperature to reduce thermal stress, with an annealing speed of 15 deg.C/min and an interval time of 10min each time. And obtaining the quartz glass embedded with the UV-LED epitaxial wafer array, wherein the surface of the UV-LED epitaxial wafer is P-GaN, and the surface of the P-GaN is flush with the surface of the quartz glass.
S06 preparing an inverted UV-LED chip array:
and (4) evaporating or sputtering ITO on the surface of the quartz glass sheet obtained in the step (S05), wherein the thickness is 1-3 μm. Spin-coating photoresist on the surface of the ITO, covering a patterned mask on the photoresist, exposing and developing, removing the photoresist of the N-GaN region on the surface of each UV-LED epitaxial wafer, etching the ITO in the N-GaN region by ITO etching liquid, and exposing the N-GaN region;
evaporating a first reflecting layer, wherein the material is Ag, the thickness is 0.3-0.5 mu m, and metal is stripped by adopting a lift-off process;
evaporation SiO2Protective layer, etching SiO2The position of the P, N electrode to be evaporated is exposed. Coating photoresist on the front surface, covering a patterned mask plate on the photoresist, exposing and developing to remove the photoresist at the P, N electrode position to be evaporated, evaporating P, N electrodes, which are made of Au, AuSn, SnAgCu, AgSn and the like, and have the thickness of 3-5 microns, and stripping metals except P, N electrodes by adopting a lift-off process, so that the chip process is completed, and the quartz glass embedded with the inverted UV-LED chip array is obtained, as shown in figure 3. Wherein, one side of the electrode 603 of the inverted UV-LED chip protrudes 3.3-5.5 μm from the surface of the quartz glass, and the protruding thickness mainly consists of the Ag reflecting layer and the metal electrode;
sequentially manufacturing a first eutectic layer 601 and a second reflecting layer 602 on the surface of quartz glass around the electrodes of the flip-chip UV-LED chip: coating photoresist on the bottom surface of quartz glass, covering a patterned mask, exposing and developing, removing the photoresist at a position 150-250 mu m away from the edge of the quartz glass, sputtering 1 mu m of kovar alloy, evaporating 4 mu m of kovar alloy and 2 mu m of gold-tin alloy as a first eutectic layer 601, and stripping off the metal of the amorphous layer by lift-off process; similarly, coating photoresist on the bottom surface of the quartz glass sheet, covering a patterned mask, exposing and developing, removing the photoresist in the area between the first eutectic layer and the inverted UV-LED chip, sputtering Au with the thickness of 0.3 μm to be used as a second reflecting layer 602, and stripping the metal of the non-reflecting layer by lift-off process;
s07 Forming discrete devices
Thinning the surface of the quartz glass sheet, which is far away from the chip, to 800-1000 microns, polishing the surface into arrayed semi-circles by using a precision polishing machine, wherein the center of each semi-circle corresponds to the center of the rectangular groove, placing the surface of the quartz glass sheet with the chip on a blue film, and cutting the quartz glass sheet by using a water jet cutter or laser to form a discrete device with a single semi-circle quartz lens 502 surrounding a single UV-LED chip, as shown in FIG. 8;
s08 die bonding:
simultaneously placing a substrate and a blue film bearing UV-LED discrete devices on different carrying discs of an eutectic machine, heating the carrying disc bearing the substrate to the eutectic temperature of 300-320 ℃, absorbing a single UV-LED discrete device by an eutectic welding head, simultaneously heating to the eutectic temperature of 300-320 ℃, enabling the eutectic layer at the edge of the quartz glass sheet to correspond to the eutectic layer at the edge of the substrate, enabling the eutectic layer of the UV-LED chip to correspond to the eutectic layer above the through hole of the substrate, applying the pressure of 300 g-500 g, and hot-pressing for 100 ms-500 ms to complete the simultaneous eutectic bonding of the single UV-LED chip and the substrate and the quartz glass and the substrate. According to the steps, the UV-LED discrete devices on the blue film are eutectic on the substrate, and the fully inorganic packaged flip UV-LED device array can be obtained after cooling.
S09 cutting: and cutting the fully inorganic packaged flip UV-LED device array obtained in the step S08 by using a water jet to obtain a single fully inorganic packaged flip UV-LED device, as shown in FIG. 9.
The preparation method provided by the embodiment of the invention has the following beneficial effects:
1. according to the invention, eutectic bonding of the inverted UV-LED chip and the ceramic substrate and eutectic bonding of quartz glass and the ceramic substrate are completed at one time, compared with the traditional UV-LED chip packaging process, the eutectic bonding process is omitted, the thermal influence of secondary heating on the LED chip is reduced, and the electrode bonding reliability of the UV-LED chip is improved;
2. the method provided by the invention can be used for manufacturing a smaller-size UV-LED device, and compared with the current low-power 3535 support in the industry, the size of the device is 0808 or 1010 or even smaller, so that the integration is very convenient;
3. the method provided by the invention can save cost, simplify the process and improve the production efficiency;
4. the method provided by the invention can realize large-scale industrial production, and has high product yield and low requirement on equipment.
The fully-inorganic packaged flip UV-LED device obtained by the embodiment of the invention has the following beneficial effects:
1. the light emitted by the inverted UV-LED chip directly enters quartz glass (with the refractive index of 1.4-1.6) from sapphire (with the refractive index of 1.78), no gas (with the refractive index of about 1) is filled in the cavity of the device, so that the total reflection loss can be greatly reduced, the light emission of the device is obviously increased, and the light efficiency is improved by 30% -55% compared with the scheme that air or vacuum exists in the cavity;
2. the heat generated by the inverted UV-LED chip can be directly dissipated through 4 side surfaces and the top surface, the heat dissipation effect is obviously better than that of a scheme that air or vacuum is adopted in the cavity, and the junction temperature of the UV-LED chip is reduced by 8-15% compared with that of the UV-LED chip under the same current.
3. The light-emitting angle of the fully-inorganic packaged inverted UV-LED device can reach 180 degrees, and compared with the light-emitting angle of the UV-LED device packaged by the support which is 90-120 degrees, the light-emitting angle is greatly increased, the application range of the UV-LED device is expanded, and wide-angle sterilization can be realized.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited thereto, and any equivalent changes based on the technical solutions of the present invention are within the protection scope of the present invention.
Claims (9)
1. A method of making an all inorganic encapsulated flip-chip UV-LED device, comprising the steps of:
preparing a UV-LED epitaxial wafer: growing a UV-LED epitaxial wafer by using MOCVD (metal organic chemical vapor deposition), and etching the UV-LED epitaxial wafer by using an inductively coupled plasma etching machine to form an MESA cutting channel and expose an N-GaN layer;
thinning and scratching of the UV-LED epitaxial wafer: grinding and thinning the UV-LED epitaxial wafer, placing the UV-LED epitaxial wafer on the surface of a blue film, carrying out invisible cutting on the MESA cutting channel by using laser, and then splitting and expanding the wafer to obtain a UV-LED epitaxial wafer array formed by arranging single UV-LED epitaxial wafers;
preparing quartz glass with a groove array on the surface, wherein the size of the groove is consistent with that of the thinned and scratched UV-LED epitaxial wafer;
assembling and welding: heating the quartz glass for the first time, placing the UV-LED epitaxial wafer in a groove on the surface of the quartz glass, cooling to room temperature, heating for the second time, applying pressure to the quartz glass and the UV-LED epitaxial wafer, and slowly annealing to obtain the quartz glass embedded with the UV-LED epitaxial wafer array;
preparing an inverted UV-LED chip array: manufacturing an ITO layer, a first reflecting layer and an P, N electrode on the UV-LED epitaxial wafer array embedded in the quartz glass groove to obtain quartz glass embedded with an inverted UV-LED chip array;
manufacturing a substrate: manufacturing a substrate by using a ceramic material, and manufacturing a pad array electrically connected with the inverted UV-LED chip array on the substrate;
and (3) crystal solidification: sequentially manufacturing a second reflecting layer and a first eutectic layer on the surface of the quartz glass embedded with the inverted UV-LED chip array around the inverted UV-LED chip electrode, manufacturing a second eutectic layer around the substrate bonding pad at a position corresponding to the first eutectic layer, aligning the inverted UV-LED chip electrode with the substrate bonding pad, aligning the first eutectic layer with the second eutectic layer, performing hot-pressing eutectic, and cooling to obtain an all-inorganic encapsulated inverted UV-LED device array;
cutting: and cutting the fully-inorganic packaged inverted UV-LED device array to obtain a single fully-inorganic packaged inverted UV-LED device.
2. The method for preparing the all-inorganic packaged flip-chip UV-LED device according to claim 1, wherein the quartz glass with the groove array on the surface is prepared by the following specific processes: depositing a quartz glass sheet with the thickness of 2-3 mm, etching the quartz glass sheet by adopting ICP (inductively coupled plasma), forming a groove with the same size as the UV-LED epitaxial wafer, and grinding and polishing the groove.
3. The method of claim 2, wherein the grinding is performed using a flat precision polisher, a pitch polishing mold and a cerium oxide polishing powder for a period of not less than 2 min.
4. The method of making an all inorganic encapsulated flip-chip UV-LED device according to claim 2, wherein said polishing comprises rough polishing and finish polishing.
5. The method for preparing the all-inorganic packaged flip-chip UV-LED device according to claim 1, wherein the quartz glass with the groove array on the surface is prepared by the following specific processes: and adopting a mold with an array bulge, wherein the size of the bulge is consistent with that of the UV-LED epitaxial wafer, pouring fused quartz, and cooling to obtain integrally-formed quartz glass with a groove array on the surface.
6. The method for preparing an all-inorganic encapsulated flip-chip UV-LED device according to claim 1, wherein the first heating temperature is 280-320 ℃ and the second heating temperature is not lower than 1300 ℃.
7. The method for preparing an all-inorganic encapsulated flip-chip UV-LED device according to claim 1, wherein the flip-chip UV-LED chip array is prepared by the following steps:
evaporating or sputtering an ITO layer on the surface of the quartz glass embedded with the UV-LED epitaxial wafer array, spinning photoresist on the surface of the ITO layer, covering a graphical mask plate on the photoresist, and exposing, developing and etching to expose an N-GaN area;
evaporating a first reflecting layer;
evaporation SiO2A protective layer etching the SiO2Protective layer, vapor deposition P, N electrode.
8. The method of claim 7, wherein the ITO layer is 1 μm to 3 μm thick, the first reflective layer is 0.3 μm to 0.5 μm thick, and the P, N electrode is 3 μm to 5 μm thick.
9. An all-inorganic packaged flip-chip UV-LED device, prepared according to the method of any one of claims 1 to 8, comprising quartz glass, a substrate and a flip-chip UV-LED chip embedded in the quartz glass, wherein the flip-chip UV-LED chip is electrically connected to the substrate, and the quartz glass and the substrate are fixedly connected through a eutectic layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010100540.2A CN111146315B (en) | 2020-02-19 | 2020-02-19 | Fully-inorganic packaged inverted UV-LED device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010100540.2A CN111146315B (en) | 2020-02-19 | 2020-02-19 | Fully-inorganic packaged inverted UV-LED device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111146315A CN111146315A (en) | 2020-05-12 |
| CN111146315B true CN111146315B (en) | 2020-07-03 |
Family
ID=70527698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010100540.2A Active CN111146315B (en) | 2020-02-19 | 2020-02-19 | Fully-inorganic packaged inverted UV-LED device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111146315B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112701205B (en) * | 2021-03-23 | 2021-09-24 | 元旭半导体科技股份有限公司 | All-inorganic packaging preparation method of deep ultraviolet chip and deep ultraviolet chip |
| CN113696524A (en) * | 2021-08-11 | 2021-11-26 | 苏州易锐光电科技有限公司 | Micro-nano processing method of optical device |
| CN117747601B (en) * | 2024-02-21 | 2024-05-28 | 北京大学 | Large array APD substrate based on embedded silicon substrate, preparation method and functional chip |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5359349B2 (en) * | 2009-02-18 | 2013-12-04 | 日立化成株式会社 | Thermosetting resin composition for light reflection, substrate for mounting optical semiconductor element, method for manufacturing the same, and optical semiconductor device |
| CN101894896A (en) * | 2010-06-13 | 2010-11-24 | 东南大学 | Glass ball cavity encapsulation method of light emitting diode |
| CN102769086B (en) * | 2012-07-09 | 2015-02-25 | 上海大学 | Light emitting diode (LED) based on silicon substrate through hole technology flip chip and manufacturing process of LED |
| KR20140102563A (en) * | 2013-02-14 | 2014-08-22 | 삼성전자주식회사 | Light-emitting device packages |
| JP2019522226A (en) * | 2016-04-15 | 2019-08-08 | グロ アーベーＧｌｏ Ａｂ | Integrated backlight unit |
| CN207753042U (en) * | 2017-12-22 | 2018-08-21 | 鸿利智汇集团股份有限公司 | A kind of inorganic encapsulated LED |
| US10437402B1 (en) * | 2018-03-27 | 2019-10-08 | Shaoher Pan | Integrated light-emitting pixel arrays based devices by bonding |
| TWI660524B (en) * | 2018-07-17 | 2019-05-21 | 友達光電股份有限公司 | Light emitting device and manufacturing method thereof |
| CN208904057U (en) * | 2018-10-29 | 2019-05-24 | 厦门信达光电物联科技研究院有限公司 | A kind of encapsulating structure of deep ultraviolet LED lamp bead |
| CN209896097U (en) * | 2019-04-11 | 2020-01-03 | 武汉高星紫外光电科技有限公司 | Deep ultraviolet LED all-inorganic airtight packaging structure |
-
2020
- 2020-02-19 CN CN202010100540.2A patent/CN111146315B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN111146315A (en) | 2020-05-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111146315B (en) | Fully-inorganic packaged inverted UV-LED device and manufacturing method thereof | |
| JP5613309B2 (en) | Optical element and semiconductor light emitting device using the same | |
| TWI433343B (en) | Vertical structure semiconductor devices with improved light output | |
| TWI312204B (en) | Method for preparing light emitting diode device having heat dissipation rate enhancement | |
| US20160233392A1 (en) | Phosphor in inorganic binder for led applications | |
| CN102718180A (en) | Concentric ring core nano silicon micro-disk micro-cavity device and preparation method thereof | |
| JP2008518474A (en) | High brightness LED package with composite optical element | |
| JP2012256899A (en) | Light emitting diode having improved light extraction effect | |
| JP2012529766A (en) | LED with remote phosphor layer and reflective submount | |
| JP2009010435A (en) | Forming optical element of light emitting device for improved light extraction | |
| JP2007142277A (en) | Method for manufacturing light emitting element | |
| TW201037867A (en) | White-light light emitting diode chips and fabrication methods thereof | |
| WO2013144777A1 (en) | Phosphor in inorganic binder for led applications | |
| CN105009253A (en) | Method for manufacturing semiconductor device | |
| CN108550677A (en) | A kind of ultraviolet LED packaging | |
| KR20200103629A (en) | Method of manufacturing semiconductor laser and optoelectronic semiconductor devices | |
| US11923488B2 (en) | Light emitting device including light transmissive member with concave portions | |
| CN105914275A (en) | Upside-down mounted light emitting diode and manufacturing method therefor | |
| CN113725345A (en) | Double-sided micro-lens array preparation method and ultraviolet LED packaging device | |
| CN101894896A (en) | Glass ball cavity encapsulation method of light emitting diode | |
| US9412899B2 (en) | Method of stress induced cleaving of semiconductor devices | |
| CN208000934U (en) | A kind of ultraviolet LED packaging | |
| CN116217218A (en) | Fluorescent ceramic with composite structure and preparation method thereof | |
| JP2018113117A (en) | Fluorescent light source device and manufacturing method thereof | |
| JP2007250852A (en) | Method of manufacturing light emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A flip UV-LED device with all inorganic packaging and its manufacturing method Effective date of registration: 20220210 Granted publication date: 20200703 Pledgee: Wuhan area branch of Hubei pilot free trade zone of Bank of China Ltd. Pledgor: HUAYINXIN (WUHAN) TECHNOLOGY CO.,LTD. Registration number: Y2022420000036 |