CN111146256A - High-stability organic light-emitting diode - Google Patents
High-stability organic light-emitting diode Download PDFInfo
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- CN111146256A CN111146256A CN201911286327.9A CN201911286327A CN111146256A CN 111146256 A CN111146256 A CN 111146256A CN 201911286327 A CN201911286327 A CN 201911286327A CN 111146256 A CN111146256 A CN 111146256A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
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- H10K50/00—Organic light-emitting devices
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- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
The invention discloses a high-stability organic light-emitting diode, which sequentially comprises a first electrode layer, an organic functional layer and a second electrode layer from bottom to top, wherein the organic functional layer and the second electrode layer form an organic film layer; the outer side surface of each pixel limiting layer forms a lap joint area and a disconnection area, and an organic film layer positioned above the pixel limiting layers and positioned between the two pixel limiting layers at the lap joint area are overlapped; the organic film layer located above the pixel defining layer at the disconnection region is disconnected from the organic film layer located between the two pixel defining layers. Harmful gas generated in the organic light-emitting diode can be directly discharged through the breaking area at the periphery of the pixel limiting layer without permeating through the organic functional layer and the second electrode layer, so that the service life is greatly prolonged, and the stability is greatly improved.
Description
Technical Field
The invention relates to the technical field of organic semiconductor lighting, in particular to a high-stability organic light-emitting diode.
Background
The Pixel Definition Layer (PDL) is used for defining the light emitting area and for insulation in the organic light emitting diode, and typically, photosensitive polyimide (PSPI) can achieve the above requirements. However, in a severe environment such as high temperature, high humidity, and sunlight, the PSPI generally releases some impurities or gases, which are harmful to the organic light emitting diode and may cause a reduction in lifetime. The main reason is that PSPI contains some pi-conjugated functional groups, electrons of these functional groups can be excited under optical, electrical or thermal conditions, and a chemical reaction occurs between the functional groups and the functional groups, which causes some impurities or gases to be released and directly permeate through the organic functional layer and the second electrode layer, thereby causing pixel shrinkage and affecting the reliability of the organic light emitting diode, as shown in fig. 1 and fig. 2.
Disclosure of Invention
In order to solve the adverse effect of photosensitive polyimide (PSPI) on the reliability of the OLED in severe environments such as high temperature, high humidity and ambient light in the prior art, the invention designs the screen body structure to enable gas released by PDL to be released, reduce the corrosion of the gas released on the OLED and improve the reliability of the OLED.
The invention adopts the following technical scheme:
a high-stability organic light-emitting diode sequentially comprises a first electrode layer, an organic functional layer and a second electrode layer from bottom to top, wherein the organic functional layer and the second electrode layer form an organic film layer; the outer side surface of each pixel limiting layer forms a lap joint region and a disconnection region, and an organic film layer positioned above the pixel limiting layers and positioned between the two pixel limiting layers at the lap joint region form lap joints; the organic film layer positioned above the pixel limiting layers at the disconnection area is disconnected with the organic film layer positioned between the two pixel limiting layers.
The outer side surface of the pixel limiting layer corresponding to the position of the disconnection area is gradually contracted inwards in the direction close to the first electrode layer, and a ventilation gap is formed between the outer side surface of the pixel limiting layer and the organic film layer on the outer side of the pixel limiting layer.
Preferably, an included angle of 90-120 degrees is formed between the outer side surface of the pixel defining layer corresponding to the position of the disconnection area and the first electrode layer.
The outer side surface of the pixel limiting layer corresponding to the lap joint area is gradually expanded outwards in the direction close to the first electrode layer.
Preferably, an included angle of 0-60 degrees is formed between the outer side surface of the pixel limiting layer corresponding to the position of the lap joint region and the first electrode layer.
And forming a disconnection region having a right angle or obtuse angle inclination angle and a lap region having an acute angle inclination angle on the outer side surface of the pixel defining layer by a photolithography process.
The height h of the pixel limiting layer is more than or equal to 1um, and the pixel limiting layer is 0.1-5 mu m higher than the organic film layer between two adjacent pixel limiting layers.
The cross section of the pixel limiting layer is of a polygonal structure, and the lap joint region is arranged at the edge position or the corner position of the pixel limiting layer.
The overlapping region overlapping length formed by the upper edge position of the pixel defining layer accounts for 10% or more of the length of the breaking region (20).
The pixel defining layer is one of phenolic resin, siloxane polymer, acrylic resin, epoxy resin, silicon oxide and silicon nitride.
An auxiliary electrode layer is further arranged between the corresponding region right below the pixel limiting layer and the first electrode layer.
The technical scheme of the invention has the following advantages:
A. according to the invention, the pixel limiting layers distributed in a matrix manner are arranged in the organic light-emitting diode, the height of each pixel limiting layer is higher than the upper surface of the second electrode between two adjacent pixel limiting layers, and meanwhile, the organic functional layer and the second electrode layer above the pixel limiting layers are electrically conducted with the organic functional layer and the second electrode layer with lower heights outside the pixel limiting layers through the lap joint area.
B. According to the invention, the pixel limiting layer with the cross section gradually shrinking inwards from top to bottom is adopted, so that a gap for leading out harmful gas is formed between the film layer formed by the organic functional layer and the second electrode layer above the pixel limiting layer and the film layers at other positions, the pixel limiting layers with different inclination angles can be set according to specific conditions, and the leading-out efficiency of the harmful gas is greatly improved.
C. The invention processes the outer side surface of the pixel limiting layer through a photoetching process, for example, through a twice wet etching process, a disconnection area is formed on the pixel limiting layer through the first wet etching, the outer side surface of the pixel limiting layer corresponding to the disconnection area and the first electrode layer form an obtuse angle structure which is right-angled or contracted from top to bottom, on the basis, a lap joint area with a lap joint structure pattern is formed through the same photoresist or different photoresists through a second wet etching process, the inclination angle between the formed pixel limiting layer and the first electrode layer is an acute angle, the film layer is separated by arranging the continuous organic film layer and arranging different inclination angle structures of the pixel limiting layer, the defect that in the prior art, the water vapor is released mainly by separating metal cathode aluminum is overcome, and the method has important significance for prolonging the service life of the organic diode and improving the stability.
Drawings
In order to more clearly illustrate the embodiments of the present invention, the drawings used in the embodiments will be briefly described below, and it is apparent that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without inventive efforts.
Fig. 1 is a plan view of a related art organic light emitting diode;
FIG. 2 is a schematic cross-sectional view A-A of FIG. 1;
FIG. 3 is a plan view of the organic light emitting diode according to the present invention;
FIG. 4 is a schematic cross-sectional view B-B of FIG. 3;
FIG. 5 is a schematic cross-sectional view C-C of FIG. 3;
FIG. 6 is a schematic cross-sectional view taken along line D-D of FIG. 3;
FIGS. 7a, 7b, and 7c are enlarged views of the portion E of the three structures in FIG. 3;
FIG. 8 is a schematic diagram of a structure of a landing layer formed over a pixel definition layer according to the present invention;
FIG. 9 is a schematic plan view of a photolithography process provided in the present invention;
FIG. 10a is a first structural schematic view of section E-E of FIG. 9;
FIG. 10b is a second structural schematic view of section E-E of FIG. 9;
the labels in the figure are as follows:
1-a first electrode layer; 2-an organic functional layer; 3-a second electrode layer; 4-a pixel defining layer; 5-an auxiliary electrode layer; 6-a substrate; 7-photoresist A; 8-Photoresist B.
10-a lap zone; 20-the breaking zone.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; they may be connected directly or indirectly through intervening media, or they may be connected internally or indirectly between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those of ordinary skill in the art.
As shown in fig. 3 and 8, the high-stability organic light emitting diode provided by the present invention sequentially includes a first electrode layer 1, an organic functional layer 2, and a second electrode layer 3 from bottom to top, wherein pixel defining layers 4 distributed in an array are disposed between the first electrode layer 1 and the organic functional layer 2, the organic functional layer and the second electrode layer form an organic film layer of the diode, and the pixel defining layers 4 are higher than an upper plane of the second electrode layer 3 located between two adjacent pixel defining layers 4, as shown in fig. 4; a lap joint region 10 and a break-off region 20 are formed on the outer side surface of the pixel defining layer 4, and the organic functional layer and the second electrode layer at the position of the lap joint region 10 form corresponding lap joints with the organic functional layer 2 and the second electrode layer 3 on the outer side thereof, respectively, as shown in fig. 5. The organic functional layer and the second electrode layer above the corresponding pixel defining layer at the disconnection region 20 form corresponding faults with the organic functional layer and the second electrode layer at the outer side thereof, respectively, as shown in fig. 4 and 6, since the pixel defining layer 4 is higher than the second electrode layer and the organic functional layer at the periphery thereof, the pixel defining layer is exposed at the position of the disconnection region to form a passage through which the harmful gas is directly discharged. In normal operation, the generated noxious gases (including moisture) will be expelled directly through the pixel defining layer above its peripheral second electrode layer, as shown in fig. 6. Under the environment of high temperature, high humidity, sunlight and the like, water vapor and harmful gas are released in time, and pixel shrinkage is avoided, so that the reliability of the whole OLED is improved, and the application environment is wider.
The pixel limiting layer can be made of resin materials, such as phenolic resin, siloxane polymer, acrylic resin and epoxy resin, and can also be made of inorganic silicon oxide and silicon nitride, so that the reliability of the OLED screen body is improved. The invention can improve the service life and stability of the organic light-emitting diode by introducing the pixel limiting layer into the organic light-emitting diode.
In addition, in order to improve the conductivity of the first electrode layer, an auxiliary electrode layer 5 is further provided between the corresponding region directly below each pixel defining layer 4 and the first electrode layer 1, and the pixel defining layer is superimposed on the auxiliary electrode layer.
As shown in fig. 4, the outer side surface of the pixel defining layer 4 corresponding to the position of the breaking region 20 is gradually shrunk inwards from top to bottom, so as to break the organic film layers (including the organic functional layer and the second electrode layer) on the pixel defining layer, that is, to break the organic film layers on the pixel defining layer in the breaking region (i.e., the non-overlapping region), and to generate a gas-permeable gap between the outer side of the pixel defining layer 4 and the organic film layers at the periphery thereof, so that outgas is released on the organic film layers, rather than permeating along the organic film layers to cause pixel shrinkage.
In the invention, the pixel defining layer is preferably in an inverted structure compared to the substrate in the disconnection region, that is, the inclination angle α formed by the photoresist on the substrate is a right angle or an obtuse angle, and the inclination angle α is preferably 90 ° to 120 °.
As shown in fig. 5, a lap joint structure is formed in the lap joint region, so that the organic film layer on the pixel defining layer is continuous, and the organic film layer of the OLED is conducted up and down, and the outer side surface of the pixel defining layer 4 corresponding to the position of the lap joint region 10 is gradually flared from top to bottom, preferably, in the lap joint region, the pixel defining layer is in a regular trapezoid structure compared with the substrate, that is, the inclination angle α formed by the photoresist on the substrate is an acute angle smaller than 90 °, and preferably α is not more than 60 °.
The tilt angles formed for the lap and the break regions may be formed by a photolithography process, as shown in fig. 9. For example, the photoresist is manufactured by two wet etching processes, a structural pattern (or called non-overlapping structure) of the breaking region is formed by first wet etching, that is, the inclination angle of the formed photoresist is a right angle or an obtuse angle, and the structural pattern of the overlapping region is formed by the same photoresist or different photoresists through a second wet etching process on the basis, that is, the inclination angle formed by the photoresist is an acute angle. The mature process is not described herein. Considering the interface problem of the lap and the break regions, since the photoresist generally has leveling property, the lap and the break regions can be formed to the same height, as shown in fig. 10 a; of course, different heights can be formed at the interface of the bridging region and the breaking region as shown in fig. 10b, for example, a gentle slope, a slope angle of an acute angle (<90 °), as long as the continuity of the subsequent organic film layer of the bridging region is not affected.
The photoresist a7 used in the lap joint region can be selected from positive photoresist, such as phenolic resin photoresist; the photoresist B8 used in the non-overlapping region can be a negative photoresist, such as PMMA photoresist. Of course, other types of materials, such as silicon oxide, silicon nitride, etc., may be used. The photolithography process may be a wet process or a dry process. Since the photolithography process is a well-established solution in the industry, it is not described herein in detail. The height h of the pixel defining layer 4 adopted by the invention is more than or equal to 1um, such as h in fig. 4 is 2 μm, and the pixel defining layer 4 is 0.1-1.5 μm, preferably 0.5 μm higher than the second electrode layer at the outer side.
As shown in fig. 7a, 7b and 7c, the cross section of the pixel defining layer 4 is preferably a rectangular structure, but may also be other structural shapes, such as a polygonal structure like a square, a trapezoid, etc., when the cross section is a square structure, the overlapping region 10 is disposed at a middle position of four outer side surfaces of the pixel defining layer 4 or at four corner positions, and the overlapping region may be in a structure form like an indent or an evagination, etc., and the overlapping of the pixel defining layer and the peripheral organic film layer is achieved through the overlapping region.
The overlapping region 10 formed at the upper edge of the pixel defining layer 4 overlaps 10% or more of the length of the breaking region 20.
Comparative example:
the same OLED device structure is used.
In a traditional OLED PSPI (PDL) lapping structure, the inclination angle of the PSPI is 30 degrees;
by adopting the structure of the invention and adopting PSPI, the angle formed by the pixel limiting layers at the fault region is 120 degrees, and the lap angle formed by the pixel limiting layers at the lap region is 30 degrees.
The light emitting aging experiment is carried out in a high-temperature and high-humidity environment, the OLED is lightened by a constant-current power supply, and the brightness is 1000cd/m21000h observe pixel shrinkage, as follows:
| traditional PDL architecture | The invention | |
| Pixel shrinkage condition | 10um | Is not contracted |
As can be seen from the above table, after the lap joint structure is adopted, the problem of screen pixel shrinkage does not occur, the ventilation effect is good, and the service life is known as follows: the traditional service life LT90 is 500h, the invention LT90 is 800h, the service life is prolonged by 300 h.
According to the invention, the pixel limiting layer with the cross section gradually shrinking inwards from top to bottom is adopted at the position of the disconnection area, so that a gap for leading out harmful gas is formed between the film layer formed by the organic functional layer and the second electrode layer above the pixel limiting layer and the organic film layer at the outer side position of the film layer, the existence of moisture or toxic gas is avoided, the pixel limiting layers with different inclination angles can be set according to specific conditions, the discharge efficiency of the harmful gas is greatly improved, and the technical problem of pixel shrinkage caused by the release of water vapor and other gases of the insulating layer when the OLED screen body works is solved.
It should be understood that the above-described embodiments are merely examples for clarity of description and are not intended to limit the scope of the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. This list is neither intended to be exhaustive nor exhaustive. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (11)
1. A high-stability organic light-emitting diode sequentially comprises a first electrode layer (1), an organic functional layer (2) and a second electrode layer (3) from bottom to top, wherein the organic functional layer (2) and the second electrode layer (3) form an organic film layer, and is characterized in that pixel limiting layers (4) distributed in an array mode are arranged between the first electrode layer (1) and the organic functional layer (2), and the pixel limiting layers (4) are higher than the upper plane of the organic film layer between every two adjacent pixel limiting layers (4); the outer side surface of the pixel defining layer (4) forms a lap joint region (10) and a break-off region (20), and an organic film layer positioned above the pixel defining layer at the lap joint region (10) is overlapped with an organic film layer positioned between the two pixel defining layers; the organic film layer located above the pixel defining layer at the disconnection region (20) is disconnected from the organic film layer located between the two pixel defining layers.
2. The OLED of claim 1, wherein the outer side of the pixel defining layer (4) corresponding to the position of the cut-off region (20) is gradually shrunk inwards in a direction approaching the first electrode layer, and a gas-permeable gap is formed between the outer side of the pixel defining layer (4) and the organic film layer outside the pixel defining layer.
3. The OLED with high stability as claimed in claim 2, wherein the outer side of the pixel defining layer (4) corresponding to the position of the open region (20) forms an included angle of 90-120 ° with the first electrode layer (1).
4. The OLED as claimed in claim 1, wherein the outer side of the pixel defining layer (4) corresponding to the position of the landing area (10) is gradually flared in a direction approaching the first electrode layer.
5. The OLED with high stability as claimed in claim 4, wherein the outer side of the pixel defining layer (4) corresponding to the position of the landing zone (10) forms an included angle of 0-60 ° with the first electrode layer (1).
6. The OLED of any one of claims 1-5, wherein the off-region (20) having a right or obtuse angle of inclination and the bridging region (10) having an acute angle of inclination are formed on the outer surface of the pixel defining layer by photolithography.
7. The OLED with high stability as claimed in claim 1, wherein the height h of the pixel defining layer (4) is greater than or equal to 1 μm, and the pixel defining layer (4) is 0.1-5 μm higher than the organic film layer between two adjacent pixel defining layers.
8. The OLED of claim 7, wherein the cross-section of the pixel defining layer (4) is a polygonal structure, and the overlapping regions (10) are disposed at the edge positions or corner positions of the pixel defining layer (4).
9. The OLED of claim 8, wherein the overlapping region (10) formed at the upper edge of the pixel defining layer (4) has an overlapping length of 10% or more of the length of the cut-off region (20).
10. The high stability organic light emitting diode of claim 1, wherein the pixel defining layer (4) is one of a phenolic resin, a siloxane polymer, an acryl resin, an epoxy resin, a silicon oxide and a silicon nitride.
11. The high stability organic light emitting diode according to claim 1, wherein an auxiliary electrode layer (5) is further disposed between the corresponding region directly below the pixel defining layer (4) and the first electrode layer (1).
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| US20060145143A1 (en) * | 2004-12-30 | 2006-07-06 | Stephen Sorich | Electronic device and process for forming same |
| CN101452947A (en) * | 2007-12-07 | 2009-06-10 | 精工爱普生株式会社 | Light-emitting device, electronic apparatus, and film-forming method |
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