CN111130464A - Ultra-wideband low-noise amplifier circuit, radio frequency device and radio frequency signal processing method - Google Patents
Ultra-wideband low-noise amplifier circuit, radio frequency device and radio frequency signal processing method Download PDFInfo
- Publication number
- CN111130464A CN111130464A CN202010079246.8A CN202010079246A CN111130464A CN 111130464 A CN111130464 A CN 111130464A CN 202010079246 A CN202010079246 A CN 202010079246A CN 111130464 A CN111130464 A CN 111130464A
- Authority
- CN
- China
- Prior art keywords
- signal
- radio frequency
- ultra
- amplifier circuit
- noise amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003672 processing method Methods 0.000 title claims abstract description 11
- 230000003321 amplification Effects 0.000 claims abstract description 25
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 25
- 238000001914 filtration Methods 0.000 claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 claims abstract description 7
- 239000003990 capacitor Substances 0.000 claims description 40
- 230000000903 blocking effect Effects 0.000 claims description 30
- 238000002955 isolation Methods 0.000 claims description 14
- 230000007850 degeneration Effects 0.000 claims description 7
- 230000007704 transition Effects 0.000 claims description 4
- 230000001939 inductive effect Effects 0.000 claims description 2
- VLQGDKKHHCKIOJ-UHFFFAOYSA-N NNOS Chemical compound NNOS VLQGDKKHHCKIOJ-UHFFFAOYSA-N 0.000 claims 1
- 238000004891 communication Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
- H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The embodiment of the invention discloses an ultra-wideband low-noise amplifier circuit, a radio frequency device and a radio frequency signal processing method. The ultra-wideband low noise amplifier circuit comprises: the single-inductor filter comprises a balun positioned outside a chip, and a single-inductor filter matching module and an amplifying module which are positioned inside the chip. One end of the balun is connected with an input signal, the other end of the balun is connected with the first end of the single-inductor filtering matching module, and the balun is used for performing input-output impedance conversion on the input signal and then inputting the converted signal to the single-inductor filtering matching module; a single-inductor filter matching module disposed between the balun and the amplification module for performing input impedance matching on the converted signal and providing a matched signal to the amplification module; the amplification module is operably connected to the second terminal of the single inductor filter matching module for amplifying the matched signal and providing an output signal.
Description
Technical Field
The invention belongs to the technical field of wireless communication, relates to a low-noise amplifier circuit, and particularly relates to an ultra-wideband low-noise amplifier circuit.
Background
A Low Noise Amplifier (LNA) circuit is an electronic amplifying circuit for amplifying a weak signal, and is generally used in a front end of a radio frequency receiver to amplify the weak signal captured by a detection device such as an antenna, and at the same time, to introduce a small Noise power to ensure an overall excellent performance of the radio frequency receiver.
With the development of wireless communication technology towards multiple frequency bands, multiple standards and multiple modes, a low noise amplifier circuit is required to not only realize the functions of receiving and amplifying wireless signals, but also cover multiple communication frequency bands and be compatible with different communication standards. This requires the low noise amplifier circuit to satisfy 50 ohm input impedance matching over a wide frequency band, which would otherwise cause degradation of signal processing performance.
Currently, a structure for realizing an input impedance matching that satisfies 50 ohms over a wide frequency band includes: a common-gate input structure, a resistance negative feedback structure and a filter matching structure. The common-gate input structure can meet the requirement of broadband input impedance matching, but has the problems of low gain and high noise. The conventional resistor degeneration structure can realize broadband input impedance matching and is low in cost, but the gain and noise performance of the conventional resistor degeneration structure are not good, and the main reason is to compromise between the broadband input impedance matching and the noise performance. In other words, to obtain a good broadband input impedance matching performance, the feedback impedance needs to be reduced, which degrades the gain and noise performance. In addition, in the actual implementation process of the circuit, due to the existence of the parasitic capacitance at the input end of the LNA, the overall input impedance bias capacitance increases with the frequency, and in order to meet the matching requirement, the feedback resistance also needs to be reduced, so that the high-frequency noise performance is poorer than the low-frequency noise performance, and meanwhile, the matching of higher frequency (more than 5 GHz) is difficult to implement. In addition, for most filter matching structures, although good matching and noise performance can be obtained, the use of the filter matching structure is very limited because more inductors are adopted, the circuit structure is complex, and the design difficulty is high, so that the area and the cost of a chip are greatly increased.
Disclosure of Invention
In order to solve the above technical problems, embodiments of the present invention provide an ultra wideband low noise amplifier circuit, a radio frequency device, and a radio frequency signal processing method. The radio frequency receiver not only can realize the coverage of a plurality of frequency bands, but also has the advantages of wide frequency band input impedance matching, low noise, high gain, low cost and simple structure, thereby not only meeting various communication application scenes, but also ensuring the overall excellent performance of the radio frequency receiver and reducing the hardware cost and power consumption.
The technical scheme of the embodiment of the invention is realized as follows:
in a first aspect, an embodiment of the present invention provides an ultra-wideband low-noise amplifier circuit, including: the Balun (Balun) is positioned outside the chip, and the single-inductance filtering matching module and the amplifying module are positioned inside the chip;
one end of the balun is connected with an input signal, the other end of the balun is connected with the first end of the single-inductor filtering matching module, and the balun is used for performing input-output impedance conversion on the input signal and then inputting a converted signal to the single-inductor filtering matching module;
a single-inductor filter matching module disposed between the balun and the amplification module for performing input impedance matching on the converted signal and providing a matched signal to the amplification module;
the amplification module is operably connected to the second terminal of the single inductor filter matching module for amplifying the matched signal and providing an output signal.
In some embodiments, a single inductive filter matching module comprises: programmable capacitance Ct1, inductance Lm, and programmable capacitance Ct 2. In some embodiments, one terminal of the programmable capacitor Ct1 is connected to a first terminal of the inductor Lm, and the other terminal is grounded; one end of the programmable capacitor Ct2 is connected to the second end of the inductor Lm, and the other end is grounded.
In some embodiments, the amplification module comprises: programmable negative feedback resistor Rf, blocking capacitor C1, blocking capacitor C2, bias isolation resistor R1, bias isolation resistor R2, amplifying PMOS (P-channel metal oxide semiconductor) tube PM and amplifying NNOS (N-channel metal oxide semiconductor) tube NM. In some embodiments, programmable degeneration resistor Rf is connected in parallel with blocking capacitor C1 and blocking capacitor C2. The first end of the negative feedback resistor Rf is connected with the second end of the single inductance filtering matching module, and the second end of the negative feedback resistor Rf is connected with the output signal; the first end of the blocking capacitor C1 is connected with the second end of the single-inductor filter matching module, and the second end of the blocking capacitor C1 is connected with the amplification PMOS pipe PM; the first end of the blocking capacitor C2 is connected with the second end of the single-inductor filtering matching module, and the second end of the blocking capacitor C2 is connected with the amplification NMOS tube NM; the bias isolation resistor R1 is connected to the second terminal of the DC blocking capacitor C1, and the bias isolation resistor R2 is connected to the second terminal of the DC blocking capacitor C2.
In some embodiments, the ratio of input to output impedance transitions provided by the balun is 1: 2.
In other embodiments, the balun provides a ratio of input to output impedance transitions of 1: 4.
In a second aspect, an embodiment of the present invention further provides a radio frequency device, where the radio frequency device includes the ultra-wideband low noise amplifier circuit of any one of the first aspect and the implementation manner of the first aspect.
In a third aspect, an embodiment of the present invention further provides a radio frequency signal processing method, which is applied to the ultra-wideband low noise amplifier circuit in any one of the first aspect and the implementation manners of the first aspect, or the radio frequency device in any one of the second aspect and the implementation manners of the second aspect, and the radio frequency signal processing method includes:
the balun receives a radio frequency input signal, performs input-output impedance conversion on the radio frequency input signal to obtain a converted signal, and then provides the converted signal to the single-inductor filtering matching module;
the single-inductor filtering matching module receives the converted signal, performs input impedance matching on the converted signal to obtain a matched signal, and then provides the matched signal to the amplifying module;
the amplification module receives and amplifies the matched signal and then provides a radio frequency output signal.
The embodiment of the invention provides an ultra-wideband low-noise amplifier circuit, a radio frequency device and a radio frequency signal processing method. Different balun input-output impedance proportions are adopted for different communication frequency bands outside a chip, so that a plurality of communication frequency bands can be covered, different communication standards are compatible, and meanwhile, the single-inductor filtering matching module and the amplifying module comprising the resistance negative feedback structure are combined in the chip, so that the input impedance matching meeting the requirements can be obtained at low frequency and high frequency, and the ultra-wideband LNA structure is obtained. Through the structural innovation, the embodiment of the invention avoids the defects of the existing amplifier circuit structure in the aspects of coverage bandwidth, noise, gain, cost and the like, not only can meet various communication application scenes, but also can ensure the overall excellent performance of a radio frequency receiver and reduce the hardware cost and power consumption.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below. It is obvious that the drawings in the following description are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
Fig. 1 is a schematic diagram of a general architecture of a radio frequency receiver according to an embodiment of the present invention.
Fig. 2 is a schematic diagram of an ultra-wideband low noise amplifier circuit according to an embodiment of the present invention.
Fig. 3 is a schematic diagram of another ultra-wideband low noise amplifier circuit according to an embodiment of the present invention.
Fig. 4 is a flowchart illustrating a radio frequency signal processing method according to an embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Referring to fig. 1, a general architecture of a radio frequency receiver provided by an embodiment of the present invention is shown, which can be universally applied to a radio frequency receiving apparatus, and may include a plurality of components disposed between a radio frequency input RFIN and a baseband output, which sequentially include a Low Noise Amplifier (LNA), a mixer, a filter/gain module, an Analog-to-Digital Converter (ADC), and a Digital reception processing module.
As shown in fig. 1, an rf input signal is amplified by a low noise amplifier and then provided to a mixer, and the mixer shifts the amplified signal according to the frequency of a Local Oscillator (LO). The filtering/gain module can filter signals and/or adjust signal gain to eliminate high-frequency noise and interference in the signal path, then the analog-to-digital converter realizes analog-to-digital conversion, and the digital receiving and processing module decodes, descrambles and/or demodulates the generated digital signals.
Among these components, the low noise amplifier circuit is usually present in the rf transceiver chip or a separate LNA chip, located in the front end of the rf receiver. Generally, a low noise amplifier circuit is responsible for amplifying the power of a weak radio frequency input signal received by an antenna for a subsequent circuit, and a small noise power needs to be introduced, so that the performance of the low noise amplifier circuit has an important influence on the overall performance of a radio frequency receiver.
Referring to fig. 2, a schematic diagram of an ultra-wideband low noise amplifier circuit according to an embodiment of the present invention is shown. The ultra-wideband low-noise amplifier circuit 1 comprises a balun 2 which is positioned outside a chip, and a single-inductance filtering module 3 and an amplifying module 4 which are positioned inside the chip.
As shown in fig. 2, the balun 2, the single-inductor filter matching module 3 and the amplifying module 4 may be connected in series. For example, one end of the balun 2 is connected to the input signal, and the other end is connected to the first end of the single-inductor filter matching module 3. Balun 2 is capable of receiving an input signal and performing input-output impedance transformation on the input signal. Different balun input-output impedance ratios may be employed for different communication frequency bands. At the same time, the balun provides 6dB of passive voltage gain, thereby contributing to good noise performance and higher gain. A single inductor filter matching module 3 is operatively connected to the balun 2, performs input impedance matching and provides a matched signal. The amplification module 4 is operatively connected to the single-inductor filter matching module 3 for amplifying the matched signal and providing an output signal.
Referring to fig. 3, the single inductor filter matching module 3 includes: programmable capacitance Ct1, inductance Lm, and programmable capacitance Ct 2. As shown in fig. 3, in the single-inductor filter matching module 3, one end of the programmable capacitor Ct1 is connected to the first end of the inductor Lm, and the other end is grounded; one end of the programmable capacitor Ct2 is connected to the second end of the inductor Lm, and the other end is grounded. Wherein the inductance Lm is adapted to provide an impedance matched to the output of the off-chip balun. Only one inductor of 1-2 nH is used in the whole chip, so that the power consumption and the area are obviously superior, the circuit structure is simple and easy to realize, the design cost is further reduced, and the power consumption and the area are low. The programmable capacitor Ct1 and the programmable capacitor Ct2 are used to block low frequency signals and pass high frequency signals. The single-inductor filter matching module 3 plays a main role in high-frequency input, and provides a certain passive voltage gain, thereby enabling good noise performance and high gain to be obtained.
The amplification block 4 includes: programmable negative feedback resistor Rf, blocking capacitor C1, blocking capacitor C2, bias isolation resistor R1, bias isolation resistor R2, amplifying PMOS transistor PM and amplifying NNOS transistor NM. As shown in fig. 3, a first terminal of the degeneration resistor Rf is connected to a second terminal of the single inductor filter matching module, and a second terminal of the degeneration resistor Rf is connected to the output signal; the first end of the blocking capacitor C1 is connected with the second end of the single-inductor filter matching module, and the second end of the blocking capacitor C1 is connected with the amplification PMOS pipe PM; the first end of the blocking capacitor C2 is connected with the second end of the single-inductor filtering matching module, and the second end of the blocking capacitor C2 is connected with the amplification NMOS tube NM; the bias isolation resistor R1 is connected to the second terminal of the DC blocking capacitor C1, and the bias isolation resistor R2 is connected to the second terminal of the DC blocking capacitor C2.
Wherein, the dc blocking capacitor C1 separates the gate of PM from the input dc voltage, and the dc blocking capacitor C2 separates the gate of NM from the input dc voltage, so that the gate dc voltages of PM and NM can be separately provided. The bias isolation resistor R1 ensures that PM gate to VBP is high resistance when the bias voltage VBP provides a dc bias voltage for PM, and the bias isolation resistor R2 ensures that NM gate to VBN is high resistance when the bias voltage VBN provides a dc bias voltage for NM. Thereby, signal leakage is enabled to be prevented. PM and NM provide large transconductance, enabling signal amplification. Under different frequency bands, the amplification module can obtain different input impedance characteristics by adjusting the value of the negative feedback resistor Rf, and matching characteristics meeting requirements are obtained by matching the balun 2 and the filtering matching module 3.
In the embodiment shown in fig. 3, the single inductor filter matching block 3 is combined with an amplification block 4 comprising a programmable degeneration resistance Rf in-chip. With the structure, at low frequency, the inductance Lm is smaller and mainly depends on the programmable negative feedback resistance Rf to obtain the input impedance meeting the requirement to realize impedance matching; at high frequencies, the single-inductor filter matching block 3 mainly functions to realize impedance matching, thus enabling ultra-wideband matching. In contrast, the single resistance negative feedback LNA structure is affected by parasitic capacitance, so that impedance matching of more than 5GHz is difficult to realize, and broadband matching is difficult to realize by the single inductance filter matching module.
Moreover, at high frequency, the single-inductor filter matching module 3 plays a main role, and the programmable negative feedback resistor Rf can be directly disconnected, so that the degradation of noise gain caused by resistor negative feedback is reduced. Meanwhile, the single-inductor filter matching module 3 provides certain passive voltage gain, so that the ultra-wideband low-noise amplifier circuit can obtain better noise performance and higher gain.
In addition, at low frequency, by selecting a balun with higher input/output impedance, for example, by selecting a balun with an input/output impedance ratio of 1:4, that is, increasing the requirement of on-chip input impedance from 50 ohms to 200 ohms, the problem of noise and gain degradation caused by the necessity of reducing feedback resistance due to the need of implementing on-chip input 50 ohms impedance is avoided, so as to obtain better noise performance and higher gain. Similarly, a balun with an input-output impedance ratio of 1:2 may also be selected in appropriate cases.
For the ultra-wideband low noise amplifier circuit shown in fig. 2 and 3, in one possible implementation, the ultra-wideband low noise amplifier circuit may include two or more baluns. The number of baluns can be flexibly selected according to the requirements of cost and performance. For example, the number of baluns can be increased to obtain better performance, and can be decreased to reduce cost. In other words, the ultra-wideband low noise amplifier circuits shown in fig. 2 and 3 may include one or more baluns.
The ultra-wideband low-noise amplifier circuit of the embodiment of the invention supports different frequency bands, and can be widely used for various radio frequency transceiver chips and single LNA chips and further used in a radio frequency receiver.
The embodiment of the invention also provides a radio frequency device which comprises the ultra-wideband low-noise amplifier circuit. In one embodiment, the rf device is an rf transceiver chip or a separate LNA chip comprising an ultra wideband low noise amplifier circuit as described above. In another embodiment, the radio frequency device includes an ultra-wideband low noise amplifier circuit, a mixer module, a filter/gain module, an Analog-to-Digital Converter (ADC), and a Digital receive processing module as described above.
The embodiment of the invention also provides a radio frequency signal processing method, which is applied to the ultra-wideband low-noise amplifier circuit or the radio frequency device, and comprises the following steps:
s201: the balun 110 receives a radio frequency input signal RFIN from a detection device such as an antenna and performs impedance conversion on the radio frequency input signal resulting in a converted signal, which is then provided to the single inductor filter matching module 120;
s202: the single-inductor filter matching module 120 receives the converted signal, performs input impedance matching on the converted signal to obtain a matched signal, and then provides the matched signal to the amplification module 130;
s203: the amplification module 130 receives and amplifies the matched signal and then provides a radio frequency output signal.
It is to be noted that, in this document, a noun element which is not limited by a numeral means one or more of the noun elements. Relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Furthermore, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include or include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications and improvements to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the scope of the invention should not be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. An ultra-wideband low noise amplifier circuit, comprising:
the single-inductor filter matching module and the amplifying module are positioned outside the chip;
one end of the balun is connected with an input signal, the other end of the balun is connected with a first end of the single-inductor filtering and matching module, and the balun is used for performing input-output impedance conversion on the input signal and then inputting a converted signal to the single-inductor filtering and matching module;
the single inductive filtering matching module disposed between the balun and the amplification module for performing input impedance matching on the converted signal and providing a matched signal to the amplification module;
the amplification module is operably connected to the second terminal of the single inductor filter matching module for amplifying the matched signal and providing an output signal.
2. The ultra-wideband low noise amplifier circuit of claim 1, wherein said single inductor filter matching module comprises: programmable capacitance Ct1, inductance Lm, and programmable capacitance Ct 2.
3. The ultra-wideband low noise amplifier circuit according to claim 2, wherein one end of the programmable capacitor Ct1 is connected to a first end of an inductor Lm, and the other end of the programmable capacitor Ct1 is grounded; one end of the programmable capacitor Ct2 is connected to the second end of the inductor Lm, and the other end of the programmable capacitor Ct2 is grounded.
4. The ultra-wideband low noise amplifier circuit according to claim 2, wherein the inductance Lm is one in number and has an inductance value of 1 to 2 nH.
5. The ultra-wideband low noise amplifier circuit of claim 1, wherein the amplification module comprises: programmable negative feedback resistor Rf, blocking capacitor C1, blocking capacitor C2, bias isolation resistor R1, bias isolation resistor R2, amplifying PMOS transistor PM and amplifying NNOS transistor NM.
6. The ultra-wideband low noise amplifier circuit according to claim 5, wherein the programmable degeneration resistor Rf is connected in parallel with the DC blocking capacitor C1 and the DC blocking capacitor C2; the first end of the negative feedback resistor Rf is connected with the second end of the single inductance filtering matching module, and the second end of the negative feedback resistor Rf is connected with the output signal; a first end of the blocking capacitor C1 is connected with a second end of the single-inductor filtering matching module, and a second end of the blocking capacitor C1 is connected with the amplification PMOS tube PM; a first end of the blocking capacitor C2 is connected to a second end of the single inductor filter matching module, and a second end of the blocking capacitor C2 is connected to the amplifying NMOS transistor NM; the bias isolation resistor R1 is connected to the second end of the DC blocking capacitor C1, and the bias isolation resistor R2 is connected to the second end of the DC blocking capacitor C2.
7. The ultra-wideband low noise amplifier circuit of claim 1, wherein the ratio of input to output impedance transitions is 1: 4.
8. The ultra-wideband low noise amplifier circuit of claim 1, wherein the ratio of input to output impedance transitions is 1: 2.
9. A radio frequency device comprising the ultra-wideband low noise amplifier circuit of any of claims 1 to 8.
10. A radio frequency signal processing method applied to the ultra-wideband low noise amplifier circuit according to any one of claims 1 to 8 or the radio frequency device according to claim 9, the radio frequency signal processing method comprising:
the balun receives a radio frequency input signal and performs input-output impedance conversion on the radio frequency input signal to obtain a converted signal, and then provides the converted signal to the single-inductor filtering matching module;
the single-inductor filtering matching module receives the converted signal, performs input impedance matching on the converted signal to obtain a matched signal, and then provides the matched signal to the amplifying module;
the amplification module receives and amplifies the matched signal and then provides a radio frequency output signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010079246.8A CN111130464A (en) | 2020-02-03 | 2020-02-03 | Ultra-wideband low-noise amplifier circuit, radio frequency device and radio frequency signal processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010079246.8A CN111130464A (en) | 2020-02-03 | 2020-02-03 | Ultra-wideband low-noise amplifier circuit, radio frequency device and radio frequency signal processing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111130464A true CN111130464A (en) | 2020-05-08 |
Family
ID=70492763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010079246.8A Pending CN111130464A (en) | 2020-02-03 | 2020-02-03 | Ultra-wideband low-noise amplifier circuit, radio frequency device and radio frequency signal processing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111130464A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030197575A1 (en) * | 2002-04-23 | 2003-10-23 | Rozieh Rofougaran | Integrated circuit low noise amplifier and applications thereof |
| US20100019848A1 (en) * | 2008-07-28 | 2010-01-28 | Paolo Rossi | Complementary Low Noise Transductor with Active Single Ended to Differential Signal Conversion |
| US20140266469A1 (en) * | 2013-03-12 | 2014-09-18 | Vadim Issakov | Current Re-Using Wideband Low-Noise Active Balun |
| CN104702223A (en) * | 2007-02-23 | 2015-06-10 | 高通股份有限公司 | Amplifier with integrated filter |
| CN110098812A (en) * | 2019-04-30 | 2019-08-06 | 杭州中科微电子有限公司 | A kind of Double Frequency Low Noise Amplifier applied to GNSS |
| CN110380177A (en) * | 2019-07-25 | 2019-10-25 | 北京邮电大学 | A kind of broadband IP D balun chip merging impedance matching and band-pass filtering function |
-
2020
- 2020-02-03 CN CN202010079246.8A patent/CN111130464A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030197575A1 (en) * | 2002-04-23 | 2003-10-23 | Rozieh Rofougaran | Integrated circuit low noise amplifier and applications thereof |
| CN104702223A (en) * | 2007-02-23 | 2015-06-10 | 高通股份有限公司 | Amplifier with integrated filter |
| US20100019848A1 (en) * | 2008-07-28 | 2010-01-28 | Paolo Rossi | Complementary Low Noise Transductor with Active Single Ended to Differential Signal Conversion |
| US20140266469A1 (en) * | 2013-03-12 | 2014-09-18 | Vadim Issakov | Current Re-Using Wideband Low-Noise Active Balun |
| CN110098812A (en) * | 2019-04-30 | 2019-08-06 | 杭州中科微电子有限公司 | A kind of Double Frequency Low Noise Amplifier applied to GNSS |
| CN110380177A (en) * | 2019-07-25 | 2019-10-25 | 北京邮电大学 | A kind of broadband IP D balun chip merging impedance matching and band-pass filtering function |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7877077B2 (en) | Multi-band low noise amplifier and multi-band radio frequency receiver including the same | |
| US6806777B2 (en) | Ultra wide band low noise amplifier and method | |
| KR101515766B1 (en) | A circuit and method of noise-canceling for differential amplifiers requiring no external matching | |
| US7224225B2 (en) | Differential inductor based low noise amplifier | |
| US20050227652A1 (en) | Low noise amplifier for wireless communications | |
| US20020030545A1 (en) | Concurrent multi-band low noise amplifier architecture | |
| Moez et al. | A low-noise CMOS distributed amplifier for ultra-wide-band applications | |
| CN107196611B (en) | Broadband single-ended-to-differential low-noise amplifier | |
| US7317351B2 (en) | Low noise amplifier | |
| CN113114116B (en) | Radio frequency low noise amplifier | |
| Lee et al. | A broadband receive chain in 65nm CMOS | |
| JP4001818B2 (en) | Front end and high frequency receiver with quadrature low noise amplifier | |
| US20080280585A1 (en) | RF receiver front-end and applications thereof | |
| CN107809220B (en) | Low noise amplifier, radio frequency integrated circuit, signal receiving module and radio frequency transceiver chip | |
| WO2020140918A1 (en) | Receiver and low-noise amplifier | |
| Chai et al. | Design of a 60-GHz receiver front-end with broadband matching techniques in 65-nm CMOS | |
| CN111130464A (en) | Ultra-wideband low-noise amplifier circuit, radio frequency device and radio frequency signal processing method | |
| CN112003571B (en) | Anti-interference network and application thereof | |
| CN111654247A (en) | Broadband low-noise amplifier adopting current multiplexing and voltage combining | |
| US10790805B2 (en) | Impedance converter to achieve negative capacitance and/or negative inductance for radio frequency front end matching | |
| Lou et al. | A 0.8 GHz–10.6 GHz SDR low-noise amplifier in 0.13-μm CMOS | |
| KR100689614B1 (en) | Ultra-wideband front-end receiver apparatus and method for transforming signals by using it | |
| US20230378913A1 (en) | INDUCTORLESS SELF-TUNED INPUT-MATCHING LOW-NOISE AMPLIFIER WITH VERY LOW NOISE FIGURE AND Gm BOOST | |
| Werth et al. | A low power, high dynamic range LNA for filterless RF receiver front-ends in 90-nm CMOS | |
| Yanduru et al. | A highly integrated GPS front-end for cellular applications in 90nm CMOS |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |