CN111129350B - Display panel and display panel manufacturing method - Google Patents
Display panel and display panel manufacturing method Download PDFInfo
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- CN111129350B CN111129350B CN201911371437.5A CN201911371437A CN111129350B CN 111129350 B CN111129350 B CN 111129350B CN 201911371437 A CN201911371437 A CN 201911371437A CN 111129350 B CN111129350 B CN 111129350B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
Abstract
The embodiment of the application provides a display panel and a display panel manufacturing process method, wherein the display panel comprises an organic light-emitting semiconductor device layer, a first barrier layer, an ultraviolet protection layer and a second barrier layer, wherein the organic light-emitting semiconductor device layer comprises a first surface and a second surface which are oppositely arranged; the first barrier layer is disposed on the first face; the ultraviolet protection layer is arranged on one side, far away from the first surface, of the first barrier layer and comprises ultraviolet light response molecules, and the ultraviolet light response molecules react under the irradiation of ultraviolet light to consume and absorb the ultraviolet light; the second barrier layer is arranged on one side, far away from the first barrier layer, of the ultraviolet protection layer. The display panel does not need to introduce a metal layer, and the influence of the metal layer on the light-emitting effect is avoided. And the ultraviolet protective layer with ultraviolet responsivity can obtain high ultraviolet resistance, reduce the cost and simplify the complexity of the manufacturing process.
Description
Technical Field
The present disclosure relates to the field of display technologies, and in particular, to a display panel and a display panel manufacturing method.
Background
Organic Light-Emitting semiconductor (OLED) displays are receiving more and more attention as next-generation display devices, and their application fields are gradually expanding, and their excellent Light-Emitting properties are favored by consumers, but their device bodies are Organic materials, and thus their ultraviolet resistance is weak. In the process of preparing the OLED, because the curing of the sealant is involved, the direct irradiation and diffraction of the curing ultraviolet light affect the service life and the display effect of the device, and therefore, increasing the ultraviolet resistance of the OLED is one of the research hotspots.
In the OLED application process, Ultraviolet (UV) enters the device under the irradiation of sunlight or in an illumination environment, the service life of the device is influenced, the traditional UV-resistant packaging mode tries to reduce the influence of the UV through a buffer layer, the UV-resistant performance is mainly improved through the introduction of a metal layer and an ultraviolet absorption layer, but the metal layer in the packaging mode can influence the light-emitting effect of the device, the bonding strength of the metal layer and other layers is difficult to ensure, and the structure is complex and the process difficulty is high.
Disclosure of Invention
The embodiment of the application provides a display panel and a display panel manufacturing method, which can avoid the influence of a metal layer on the light emitting effect of a device, and can reduce the cost and simplify the complexity of the manufacturing process while obtaining high ultraviolet resistance.
The application provides a display panel, including:
an organic light emitting semiconductor device layer including first and second oppositely disposed faces;
a first barrier layer disposed on the first face;
the ultraviolet protective layer is arranged on one side, far away from the first surface, of the first blocking layer and comprises ultraviolet light response molecules, and the ultraviolet light response molecules react under the irradiation of ultraviolet light to consume and absorb the ultraviolet light;
the second barrier layer is arranged on one side, far away from the first barrier layer, of the ultraviolet protection layer.
In some embodiments, the uv protective layer comprises a reversible uv sacrificial layer and an irreversible uv sacrificial layer;
the reversible ultraviolet sacrificial layer is arranged on one side, far away from the first face, of the first blocking layer, the reversible ultraviolet sacrificial layer is made of azobenzene derivatives, and the azobenzene derivatives are subjected to conformational change under ultraviolet light irradiation to absorb ultraviolet light;
the irreversible ultraviolet sacrificial layer is arranged on one side, far away from the first blocking layer, of the reversible ultraviolet sacrificial layer, the irreversible ultraviolet sacrificial layer is made of a photo-cracking active derivative, and the photo-cracking active derivative performs a photo-cracking reaction under the irradiation of ultraviolet light so as to consume the ultraviolet light.
In some embodiments, the materials of the reversible ultraviolet sacrificial layer and the irreversible ultraviolet sacrificial layer are light-transmitting materials with light transmittance of 90% or more.
In some embodiments, the reversible uv sacrificial layer is 150nm to 350nm thick; the thickness of the irreversible ultraviolet sacrificial layer is 400nm to 600 nm.
The application provides a manufacturing method of a display panel, comprising the following steps:
providing an organic light-emitting semiconductor device layer, wherein the organic light-emitting semiconductor device layer comprises a first side and a second side which are oppositely arranged;
arranging a first barrier layer on the first surface;
an ultraviolet protection layer is arranged on one side, far away from the first face, of the first barrier layer, and comprises ultraviolet light response molecules, and the ultraviolet light response molecules react under the irradiation of ultraviolet light to consume and absorb the ultraviolet light;
and arranging a second barrier layer on one side of the ultraviolet protection layer far away from the first barrier layer.
In some embodiments, the disposing an ultraviolet protective layer on the first barrier layer comprises:
a reversible ultraviolet sacrificial layer is arranged on one side, far away from the first face, of the first blocking layer, the reversible ultraviolet sacrificial layer is made of azobenzene derivatives, and the azobenzene derivatives are subjected to conformational change under ultraviolet light irradiation so as to absorb ultraviolet light;
one side of the reversible ultraviolet sacrificial layer, which is far away from the first blocking layer, is provided with an irreversible ultraviolet sacrificial layer, the irreversible ultraviolet sacrificial layer is made of a photocleavage active derivative, and the photocleavage active derivative performs a photocleavage reaction under the irradiation of ultraviolet light so as to consume the ultraviolet light.
In some embodiments, the reversible uv sacrificial layer material solution concentration is 10 to 20 mg/ml; the concentration of the irreversible ultraviolet sacrificial layer material solution is 40-60 mg/ml.
In some embodiments, the method of disposing the reversible uv sacrificial layer on the first barrier layer, disposing the irreversible uv sacrificial layer on the reversible uv sacrificial layer, and disposing the second barrier layer on the uv protective layer is a solution processing method.
In some embodiments, the reversible uv sacrificial layer is 150nm to 350nm thick; the thickness of the irreversible ultraviolet sacrificial layer is 400nm to 600 nm.
In some embodiments, after disposing the second barrier layer on the ultraviolet protection layer, the method further includes: curing the organic light emitting semiconductor device layer, the first barrier layer, the ultraviolet protection layer, and the second barrier layer.
The display panel provided by the embodiment of the application comprises an organic light-emitting semiconductor device layer, a first barrier layer, an ultraviolet protection layer and a second barrier layer, wherein the organic light-emitting semiconductor device layer comprises a first surface and a second surface which are oppositely arranged; the first barrier layer is disposed on the first face; the ultraviolet protection layer is arranged on one side, far away from the first surface, of the first barrier layer and comprises ultraviolet light response molecules, and the ultraviolet light response molecules react under the irradiation of ultraviolet light to consume and absorb the ultraviolet light; the second barrier layer is arranged on one side, far away from the first barrier layer, of the ultraviolet protection layer. The display panel does not need to introduce a metal layer, and the influence of the metal layer on the light-emitting effect is avoided. And the ultraviolet protective layer with ultraviolet responsivity can obtain high ultraviolet resistance, reduce the cost and simplify the complexity of the manufacturing process.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic view of a display panel according to an embodiment of the present disclosure.
Fig. 2 is another schematic view of a display panel according to an embodiment of the present disclosure.
Fig. 3 is a flowchart of a display panel manufacturing method according to an embodiment of the present disclosure.
Fig. 4 is another flowchart of a display panel manufacturing method according to an embodiment of the present disclosure.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that in the description of the present application, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, which are only for convenience in describing the present application and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be configured in a specific orientation, and operate, and thus, should not be construed as limiting the present application.
The embodiments of the present application provide a display panel, which is described in detail below.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a display panel 10 according to an embodiment of the present disclosure. The display panel 10 includes an organic light emitting semiconductor device layer 101, a first barrier layer 102, an ultraviolet protection layer 103, and a second barrier layer 104. The organic light emitting semiconductor device layer 101 includes a first face 101a and a second face 101b that are oppositely disposed. The first barrier layer 102 is disposed on the first face 101 a. The ultraviolet protection layer 103 is disposed on a side of the first barrier layer 102 away from the first face 101a, and the ultraviolet protection layer 103 includes ultraviolet light responsive molecules that react under ultraviolet light irradiation to consume and absorb ultraviolet light. The second barrier layer 104 is disposed on a side of the uv-protective layer 103 remote from the first barrier layer 102. The display panel does not need to introduce a metal layer, and the influence of the metal layer on the light-emitting effect is avoided. And by arranging the ultraviolet protection layer 103 with ultraviolet responsivity, the cost can be reduced and the complexity of the manufacturing process can be simplified while high ultraviolet resistance is obtained.
Note that the first surface 101a may be an upper surface of the organic light-emitting semiconductor device layer 101, and the second surface 101b may be a lower surface of the organic light-emitting semiconductor device layer 101. Of course, the first surface 101a may be a lower surface of the organic light emitting semiconductor device layer 101, and the second surface 101b may be an upper surface of the organic light emitting semiconductor device layer 101. In the embodiment of the present application, without being particularly described, the default is that the first surface 101a is the upper surface of the organic light emitting semiconductor device layer 101, and the second surface 101b is the lower surface of the organic light emitting semiconductor device layer 101.
Referring to fig. 2, fig. 2 is a schematic structural diagram of another display panel 10 according to an embodiment of the present disclosure.
The display panel 10 in the embodiment of the present application is different from the previous embodiment in that the ultraviolet protection layer 103 includes a reversible ultraviolet sacrificial layer 1031 and an irreversible ultraviolet sacrificial layer 1032. The reversible ultraviolet sacrificial layer 1031 is disposed on a side of the first barrier layer 102 away from the first surface 101a, the reversible ultraviolet sacrificial layer 1031 is made of azobenzene derivatives, and the azobenzene derivatives undergo a conformational change under the irradiation of ultraviolet light to absorb the ultraviolet light. The irreversible uv sacrificial layer 1032 is disposed on a side of the reversible uv sacrificial layer 1031 away from the first barrier layer 102, and a material of the irreversible uv sacrificial layer 1032 is a photo-cleavage active derivative, which undergoes a photo-cleavage reaction under irradiation of uv light to consume the uv light.
The azobenzene derivative has different dynamic responses under ultraviolet light and visible light, can absorb the ultraviolet light under the irradiation of the ultraviolet light, and can change a trans structure into a cis structure from the trans structure, and can change the cis structure into the trans structure under the irradiation of the visible light. Specifically, the azobenzene derivative may be azobenzene. Further, the azobenzene derivative may be azobenzene having an alkyl chain of five or more carbon atoms. Wherein the number of carbon atoms in the alkyl chain having five or more carbon atoms may be five, six, seven, eight, nine or ten. Further, the number of carbon atoms in the alkyl chain may be five or more. Therefore, the reversible ultraviolet sacrificial layer 1031 can absorb ultraviolet light to protect the organic light-emitting semiconductor device layer 101 under the irradiation of ultraviolet light, and recover a trans-structure to have the capability of absorbing ultraviolet light again under the operation of the device and the stimulation of external visible light. Alkyl chains with more than five carbon atoms can ensure good processability of the reversible ultraviolet sacrificial layer 1031, and facilitate subsequent processing.
Wherein, the photocleavage active derivative undergoes photocleavage reaction under the irradiation of ultraviolet light to consume the ultraviolet light. Further, the photocleavage active derivative may be a photocleavage active derivative having an alkyl chain of five or more carbon atoms. Specifically, the photocleavable active derivative may be a nitrobenzene derivative or a benzil derivative. Wherein the number of carbon atoms in the alkyl chain having five or more carbon atoms may be five, six, seven, eight, nine or ten. Further, the number of carbon atoms in the alkyl chain may be five or more. Accordingly, the irreversible uv sacrificial layer 1032 can consume uv light under uv light irradiation to protect the organic light emitting semiconductor device layer 101. Moreover, the cracked product of the photocracking active derivative does not damage the organic light-emitting semiconductor device layer 101 and does not have secondary reactivity. The alkyl chain with more than five carbon atoms in the molecular structure can ensure good processability of the irreversible ultraviolet sacrificial layer 1032, and is convenient for subsequent processing.
The reversible ultraviolet sacrificial layer 1031 and the irreversible ultraviolet sacrificial layer 1032 are made of light-transmitting materials with light transmittance of 90% or more. The materials of the first barrier layer 102 and the second barrier layer 104 are transparent materials with light transmittance of 90% or more, and the high-transparency materials used for the first barrier layer 102 and the second barrier layer 104 can resist permanent deformation and fracture under the action of external force. The light transmittance of the light-transmitting material with the light transmittance of more than 90% can be 90%, 95% or 98%.
Wherein the thickness of the reversible ultraviolet sacrificial layer 1031 is 150nm to 350 nm; the irreversible uv sacrificial layer 1032 is 400nm to 600nm thick. Specifically, the thickness of the reversible uv sacrificial layer 1031 may be 150nm, 200nm, 250nm, 300nm, or 350 nm; the thickness of the irreversible uv sacrificial layer 1032 may be 400nm, 450nm, 500nm, 550nm, or 600 nm. Further, the thickness of the reversible ultraviolet sacrificial layer 1031 is 250nm, and the thickness of the irreversible ultraviolet sacrificial layer 1032 is 500 nm.
In the present embodiment, the display panel 10 does not need to introduce a metal layer, so that the influence of the metal layer on the light emitting effect is avoided. And reduce the cost and simplify the complexity of the manufacturing process. In addition, the irreversible ultraviolet sacrificial layer 1032 chemically reacts under the irradiation of ultraviolet light to consume the ultraviolet light, and the reversible conformation change of the reversible ultraviolet sacrificial layer 1031 under the irradiation of ultraviolet light and visible light absorbs the ultraviolet light to realize the ultraviolet light protection effect on the organic light-emitting semiconductor device layer 101.
The present invention provides a method for manufacturing a display panel, which is described in detail below. Referring to fig. 3, fig. 3 is a schematic flow chart of a packaging process in the embodiment of the present application.
An organic light emitting semiconductor device layer is provided 201, which includes oppositely disposed first and second sides.
The first surface may be an upper surface of the organic light emitting semiconductor device layer, and the second surface may be a lower surface of the organic light emitting semiconductor device layer. Of course, the first surface may also be the lower surface of the organic light emitting semiconductor device layer, and the second surface may be the upper surface of the organic light emitting semiconductor device layer. In the embodiments of the present application, without being particularly described, the first surface is an upper surface of the organic light emitting semiconductor device layer, and the second surface is a lower surface of the organic light emitting semiconductor device layer
The organic light emitting semiconductor device layer includes a cathode layer, an anode layer, a Hole Injection Layer (HIL), an Electron Injection Layer (EIL), a Hole Transport Layer (HTL), an Electron Transport Layer (ETL), and an emission layer (EML). The organic semiconductor device layer may further include an Electron Blocking Layer (EBL) and a Hole Blocking Layer (HBL). The structure of the organic light emitting semiconductor device layer and the assembly thereof are well known to those skilled in the art and will not be described in detail herein.
202 is provided with a first barrier layer on the first side.
Wherein the first barrier layer is disposed on the cathode layer of the organic light emitting semiconductor device layer.
The material of the first blocking layer is a light-transmitting material with light transmittance of more than 90%, and the high-light-transmitting material used for the first blocking layer can resist permanent deformation and fracture under the action of external force. The light transmittance of the light-transmitting material with the light transmittance of more than 90% can be 90%, 95% or 98%.
203, an ultraviolet protection layer is arranged on one side of the first barrier layer far away from the first surface.
The ultraviolet protection layer comprises ultraviolet response molecules, and the ultraviolet response molecules react under the irradiation of ultraviolet light to consume and absorb the ultraviolet light. Wherein the ultraviolet light response molecule comprises azobenzene derivatives and photocleavage active derivatives.
The azobenzene derivative has different dynamic responses under ultraviolet light and visible light, can absorb the ultraviolet light under the irradiation of the ultraviolet light, changes a trans structure into a cis structure, and can change the cis structure into the trans structure under the irradiation of the visible light. Specifically, the azobenzene derivative may be azobenzene. Further, the azobenzene derivative may be azobenzene having an alkyl chain of five or more carbon atoms. Therefore, the ultraviolet protective layer can absorb ultraviolet light under the irradiation of ultraviolet light to protect the organic light-emitting semiconductor device layer, and can recover a trans-structure to have the capability of absorbing ultraviolet light again under the working of the device and the stimulation of external visible light.
Wherein, the photocleavage active derivative undergoes photocleavage reaction under the irradiation of ultraviolet light to consume the ultraviolet light. Further, the photocleavage active derivative may be a photocleavage active derivative having an alkyl chain with five or more carbon atoms. Specifically, the photocleavable active derivative may be a nitrobenzene derivative or a benzil derivative. Therefore, the irreversible ultraviolet sacrificial layer can consume ultraviolet light under the irradiation of ultraviolet light to protect the organic light-emitting semiconductor device layer. Moreover, the products of the cracking of the photocracking active derivatives do not damage the organic light-emitting semiconductor device layer and do not have secondary reaction activity.
Wherein the number of carbon atoms in the alkyl chain having five or more carbon atoms may be five, six, seven, eight, nine or ten. Further, the number of carbon atoms in the alkyl chain having five or more carbon atoms may be five. The alkyl chain with more than five carbon atoms in the molecular structure can ensure good processability of the ultraviolet protective layer, and is convenient for subsequent processing.
204 a second barrier layer is disposed on the side of the uv protective layer away from the first barrier layer.
And arranging a second barrier layer on one side of the ultraviolet protective layer, which is far away from the first barrier layer, by adopting a solution processing method. Specifically, a second barrier layer material solution is formulated. And coating the second barrier layer material solution on the ultraviolet protective layer by adopting a spin coating, brush coating, spray coating, knife coating, dip coating, roller coating, screen printing, printing or ink-jet printing method. Removing the excess solvent to obtain a second barrier layer.
The material of the second barrier layer is a transparent material with light transmittance of more than 90%, and the high-transparency material used for the second barrier layer can resist permanent deformation and fracture under the action of external force. The light transmittance of the light-transmitting material with the light transmittance of more than 90% can be 90%, 95% or 98%.
According to the display panel manufacturing method, the ultraviolet protection layer is arranged on the organic light-emitting semiconductor device layer to prevent ultraviolet light from damaging the organic light-emitting semiconductor device layer. The ultraviolet protective layer is arranged on one side, far away from the first face, of the first blocking layer and comprises ultraviolet light response molecules, and the ultraviolet light response molecules react under ultraviolet light irradiation to consume and absorb ultraviolet light. The display panel does not need to introduce a metal layer, and the influence of the metal layer on the light-emitting effect is avoided. And by arranging the ultraviolet protection layer with ultraviolet responsivity, the cost can be reduced and the complexity of the manufacturing process can be simplified while high ultraviolet resistance is obtained.
The organic light-emitting semiconductor device layer, the first barrier layer, the ultraviolet protection layer and the second barrier layer can be photo-cured or thermally cured by ultraviolet irradiation or heating. The organic light-emitting semiconductor device layer, the first barrier layer, the ultraviolet protection layer and the second barrier layer are cured, so that the display panel can obtain better stability, and subsequent processing and application are facilitated.
Referring to fig. 4, fig. 4 is a schematic flow chart illustrating a display panel manufacturing method according to an embodiment of the present disclosure.
301 provides an organic light emitting semiconductor device layer comprising oppositely disposed first and second faces.
The organic light emitting semiconductor device layer includes a cathode layer, an anode layer, a Hole Injection Layer (HIL), an Electron Injection Layer (EIL), a Hole Transport Layer (HTL), an Electron Transport Layer (ETL), and an emission layer (EML). The organic semiconductor device layer may further include an Electron Blocking Layer (EBL) and a Hole Blocking Layer (HBL). The structure of the organic light emitting semiconductor device layer and its assembly are well known to those skilled in the art and will not be described in detail herein.
302 is provided with a first barrier layer on a first side.
Wherein the first barrier layer is disposed on the cathode layer of the organic light emitting semiconductor device layer.
The material of the first blocking layer is a light-transmitting material with light transmittance of more than 90%, and the high-light-transmitting material used for the first blocking layer can resist permanent deformation and fracture under the action of external force. The light transmittance of the light-transmitting material with the light transmittance of more than 90% can be 90%, 95% or 98%.
303 a reversible uv sacrificial layer is provided on the side of the first barrier layer remote from the first side.
The reversible ultraviolet sacrificial layer is made of azobenzene derivatives, and the azobenzene derivatives are subjected to conformational change under ultraviolet light irradiation to absorb ultraviolet light. The azobenzene derivative can absorb ultraviolet light under the irradiation of the ultraviolet light, change a trans structure into a cis structure, and change the cis structure into the trans structure under the irradiation of the visible light. Specifically, the azobenzene derivative may be azobenzene. Further, the azobenzene derivative may be azobenzene having an alkyl chain of five or more carbon atoms. Wherein the number of carbon atoms in the alkyl chain with more than five carbon atoms can be five, six, seven, eight, nine or ten. Further, the number of carbon atoms in the alkyl chain having five or more carbon atoms may be five. Therefore, the reversible ultraviolet sacrificial layer can absorb ultraviolet light under the irradiation of ultraviolet light to protect the organic light-emitting semiconductor device layer, and recovers a trans-structure to have the capability of absorbing ultraviolet light again under the working of the device and the stimulation of external visible light. The alkyl chain with more than five carbon atoms can ensure good processability of the reversible ultraviolet sacrificial layer, and is convenient for subsequent processing.
Wherein, the reversible ultraviolet sacrificial layer material adopts a light-transmitting material with the light transmittance of more than 90 percent. The light transmittance of the light-transmitting material with the light transmittance of more than 90% can be 90%, 95% or 98%.
And arranging a reversible ultraviolet sacrificial layer on one side of the first barrier layer, which is far away from the first surface, by adopting a solution processing method. Specifically, a reversible uv sacrificial layer material solution is prepared. Wherein, the concentration of the solution of the reversible ultraviolet sacrificial layer material is 10 to 20 mg/ml. Specifically, the concentration of the solution of the reversible UV sacrificial layer material is 10mg/ml, 12.5mg/ml, 15mg/ml, 17.5mg/ml or 20 mg/ml. The reversible uv sacrificial layer material solution is coated on the first barrier layer using spin coating, brush coating, spray coating, knife coating, dip coating, roll coating, screen printing, or ink jet printing methods. And removing the redundant solvent to obtain the reversible ultraviolet sacrificial layer.
Wherein the thickness of the reversible ultraviolet sacrificial layer is 150nm to 350 nm. In particular, the thickness of the reversible uv sacrificial layer may be 150nm, 200nm, 250nm, 300nm, or 350 nm. Further, the thickness of the reversible ultraviolet sacrificial layer is 250 nm.
304 an irreversible uv sacrificial layer is disposed on a side of the reversible uv sacrificial layer away from the first barrier layer.
The material of the irreversible ultraviolet sacrificial layer is a photocleavage active derivative, and the photocleavage active derivative performs photocleavage reaction under the irradiation of ultraviolet light to consume the ultraviolet light. Further, the photocleavage active derivative may be a photocleavage active derivative having an alkyl chain of five or more carbon atoms. Specifically, the photocleavable active derivative may be a nitrobenzene derivative or a benzil derivative. Wherein the number of carbon atoms in the alkyl chain having five or more carbon atoms may be five, six, seven, eight, nine or ten. Further, the number of carbon atoms in the alkyl chain may be five or more. Therefore, the irreversible ultraviolet sacrificial layer can consume ultraviolet light under the irradiation of ultraviolet light to protect the organic light-emitting semiconductor device layer. Moreover, the products of the cracking of the photocracking active derivatives do not damage the organic light-emitting semiconductor device layer and do not have secondary reaction activity. The alkyl chain with more than five carbon atoms in the molecular structure can ensure good processability of the irreversible ultraviolet sacrificial layer, and is convenient for subsequent processing.
Wherein, the material of the irreversible ultraviolet sacrificial layer adopts a light-transmitting material with the light transmittance of more than 90 percent. The light transmittance of the light-transmitting material with the light transmittance of more than 90% can be 90%, 95% or 98%.
Wherein, a solution processing method is adopted to arrange the irreversible ultraviolet sacrificial layer on one side of the reversible ultraviolet sacrificial layer far away from the first barrier layer. Specifically, a solution of an irreversible uv sacrificial layer material is prepared. Wherein the concentration of the irreversible ultraviolet sacrificial layer material solution is 40-60 mg/ml. Specifically, the concentration of the irreversible UV sacrificial layer material solution is 40mg/ml, 45mg/ml, 50mg/ml, 55mg/ml or 60 mg/ml. Further, the concentration of the irreversible UV sacrificial layer material solution is 50 mg/ml. The irreversible ultraviolet sacrificial layer material solution is coated on the reversible ultraviolet sacrificial layer by adopting a spin coating, brush coating, spray coating, knife coating, dip coating, roll coating, screen printing, printing or ink-jet printing method. And removing the redundant solvent to obtain the irreversible ultraviolet sacrificial layer.
Wherein the thickness of the irreversible ultraviolet sacrificial layer is 400nm to 600 nm. Specifically, the thickness of the irreversible uv sacrificial layer may be 400nm, 450nm, 500nm, 550nm, or 600 nm. Further, the thickness of the irreversible ultraviolet sacrificial layer is 500 nm.
305 a second barrier layer is provided on the side of the irreversible uv sacrificial layer remote from the reversible uv sacrificial layer.
And arranging a second barrier layer on one side of the irreversible ultraviolet sacrificial layer far away from the reversible ultraviolet sacrificial layer by adopting a solution processing method. Specifically, a second barrier layer material solution is formulated. The solution of the second barrier layer material is coated on the irreversible uv sacrificial layer using spin coating, brush coating, spray coating, knife coating, dip coating, roll coating, screen printing, or ink jet printing. Removing the excess solvent to obtain a second barrier layer.
The material of the second barrier layer is a transparent material with light transmittance of more than 90%, and the high-transparency material used for the second barrier layer can resist permanent deformation and fracture under the action of external force. The light transmittance of the light-transmitting material with the light transmittance of more than 90% can be 90%, 95% or 98%.
According to the display panel manufacturing method, the reversible ultraviolet sacrificial layer and the irreversible ultraviolet sacrificial layer are arranged on the organic light-emitting semiconductor device layer to prevent ultraviolet light from damaging the organic light-emitting semiconductor device layer. The reversible ultraviolet sacrificial layer is arranged on one side, far away from the first face, of the first blocking layer, and the irreversible ultraviolet sacrificial layer is arranged on one side, far away from the first blocking layer, of the reversible ultraviolet sacrificial layer. The reversible ultraviolet sacrificial layer is made of azobenzene derivatives, and the azobenzene derivatives are subjected to conformational change under ultraviolet light irradiation to absorb ultraviolet light. The material of the irreversible ultraviolet sacrificial layer is a photocracking active derivative, and the photocracking active derivative performs a photocracking reaction under the irradiation of ultraviolet light to consume the ultraviolet light. The display panel does not need to introduce a metal layer, and the influence of the metal layer on the light-emitting effect is avoided. And the high ultraviolet resistance can be obtained by arranging the reversible ultraviolet sacrificial layer and the irreversible ultraviolet sacrificial layer with ultraviolet responsivity, and simultaneously, the cost is reduced and the complexity of the manufacturing process is simplified.
The organic light-emitting semiconductor device layer, the first barrier layer, the reversible ultraviolet sacrificial layer, the irreversible ultraviolet sacrificial layer and the second barrier layer can be photo-cured or thermally cured by ultraviolet irradiation or heating. The organic light-emitting semiconductor device layer, the first barrier layer, the reversible ultraviolet sacrificial layer, the irreversible ultraviolet sacrificial layer and the second barrier layer are cured, so that the display panel can obtain better stability, and subsequent processing and application are facilitated.
The display panel and the display panel manufacturing method provided by the embodiment of the present application are described in detail, and the principle and the embodiment of the present application are described herein by applying specific examples, and the description of the above embodiments is only used to help understanding the present application. Meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
Claims (8)
1. A display panel, comprising:
an organic light emitting semiconductor device layer including first and second oppositely disposed faces;
a first barrier layer disposed on the first face;
the ultraviolet protective layer is arranged on one side, far away from the first surface, of the first blocking layer and comprises ultraviolet light response molecules, and the ultraviolet light response molecules react under the irradiation of ultraviolet light to consume and absorb the ultraviolet light;
the second barrier layer is arranged on one side, far away from the first barrier layer, of the ultraviolet protection layer;
the ultraviolet protection layer comprises a reversible ultraviolet sacrificial layer and an irreversible ultraviolet sacrificial layer;
the reversible ultraviolet sacrificial layer is arranged on one side, far away from the first face, of the first blocking layer, the reversible ultraviolet sacrificial layer is made of azobenzene derivatives, and the azobenzene derivatives are subjected to conformational change under ultraviolet light irradiation to absorb ultraviolet light;
the irreversible ultraviolet sacrificial layer is arranged on one side, far away from the first blocking layer, of the reversible ultraviolet sacrificial layer, the irreversible ultraviolet sacrificial layer is made of a photo-cracking active derivative, and the photo-cracking active derivative performs a photo-cracking reaction under the irradiation of ultraviolet light so as to consume the ultraviolet light.
2. The display panel according to claim 1, wherein a material of the reversible ultraviolet sacrificial layer and the irreversible ultraviolet sacrificial layer is a light-transmitting material having a light transmittance of 90% or more.
3. The display panel according to claim 2, wherein the reversible uv sacrificial layer has a thickness of 150nm to 350 nm; the thickness of the irreversible ultraviolet sacrificial layer is 400nm to 600 nm.
4. A method for manufacturing a display panel includes:
providing an organic light-emitting semiconductor device layer, wherein the organic light-emitting semiconductor device layer comprises a first side and a second side which are oppositely arranged;
arranging a first barrier layer on the first surface;
an ultraviolet protection layer is arranged on one side, far away from the first face, of the first barrier layer, and comprises ultraviolet light response molecules, and the ultraviolet light response molecules react under the irradiation of ultraviolet light to consume and absorb the ultraviolet light;
arranging a second barrier layer on one side of the ultraviolet protection layer far away from the first barrier layer;
the setting of the ultraviolet protection layer on the first barrier layer includes:
a reversible ultraviolet sacrificial layer is arranged on one side, far away from the first surface, of the first blocking layer, the reversible ultraviolet sacrificial layer is made of azobenzene derivatives, and the azobenzene derivatives are subjected to conformational change under ultraviolet light irradiation to absorb ultraviolet light;
one side of the reversible ultraviolet sacrificial layer, which is far away from the first blocking layer, is provided with an irreversible ultraviolet sacrificial layer, the irreversible ultraviolet sacrificial layer is made of a photocleavage active derivative, and the photocleavage active derivative performs a photocleavage reaction under the irradiation of ultraviolet light so as to consume the ultraviolet light.
5. The process of claim 4, wherein the reversible UV sacrificial layer is disposed on the first barrier layer, the irreversible UV sacrificial layer is disposed on the reversible UV sacrificial layer, and the second barrier layer is disposed on the UV protective layer by solution processing.
6. The process of claim 5, wherein the concentration of the reversible UV sacrificial layer material solution is 10 to 20 mg/ml; the concentration of the irreversible ultraviolet sacrificial layer material solution is 40-60 mg/ml.
7. The process of claim 4, wherein the thickness of the reversible UV sacrificial layer is 150nm to 350 nm; the thickness of the irreversible ultraviolet sacrificial layer is 400nm to 600 nm.
8. The process of claim 4, further comprising, after disposing a second barrier layer on the UV protection layer: curing the organic light emitting semiconductor device layer, the first barrier layer, the ultraviolet protection layer, and the second barrier layer.
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