CN111129280A - 一种集成波导结构光子数分辨超导单光子探测器及其制备方法 - Google Patents
一种集成波导结构光子数分辨超导单光子探测器及其制备方法 Download PDFInfo
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Abstract
本发明公开了一种集成波导结构光子数分辨超导单光子探测器，包括衬底和SiOx波导结构，所述衬底与SiOx波导之间设置有由若干个单元串联的超导纳米线单光子探测阵列，每个单元由电阻和纳米线并联而成。本发明不仅能够高速探测到波导传输的极微弱光子，并且能够分辨检测到的光子数目，在量子光学芯片领域具有重要应用。本发明的制备方法为：1、在氟化镁衬底上磁控溅射氮化铌超导薄膜；2、光刻和剥离制备电极；3、用电子束光刻制备纳米线图形，并通过反应离子刻蚀获得氮化铌纳米线阵列；4、光刻电阻图案，并通过制备并联电阻；5、用电子束光刻制备波导图形，并通过等离子体增强化学气相沉积淀积SiOx波导。本发明的制备工艺步骤简单，成品率较高。
Description
技术领域
本发明属于超导单光子探测技术领域，特别涉及一种集成波导结构光子数分辨超导单光子探测器及其制备方法。
背景技术
量子光学集成电路主要由单光子源、无源光学元件和单光子探测器组成，是量子通信和量子信息处理中的核心技术，亦构成了线性光学量子计算和全光量子门的基础。利用波导结构将光子耦合到单光子探测器有利于实现量子光学电路的片上集成，从而简化电路复杂度和测量，目前只有边沿转换传感器(TES)和超导单光子探测器(SSPD)采用了波导结构。但是TES是感温探测器，具有较长的恢复时间和较低的探测速度等缺点。
发明内容
发明目的：针对现有技术中存在的问题，本发明提供一种集成波导结构光子数分辨超导单光子探测器及其制备方法，满足量子光学电路中对光子数分辨和高速应用需求，可用于片上集成的波导耦合结构超导纳米线单光子探测阵列器件，不仅能够高速探测到波导传输的极微弱光信号，并且能够分辨检测到的光子数目。
技术方案：为解决上述技术问题，本发明提供一种集成波导结构光子数分辨超导单光子探测器，其特征在于，包括衬底和SiOx波导结构，所述衬底与SiOx波导之间设置有由若干个单元串联的超导纳米线单光子探测阵列，每个单元由电阻和纳米线并联而成。
进一步的，所述SiOx波导覆盖所有纳米线。
进一步的，所述超导纳米线单光子探测阵列由若干根总长30-500μm，宽40-120nm的纳米线串联构成，纳米线占空比为20-80％。
进一步的，所述电阻为金属薄膜电阻；所述纳米线为超导纳米线。
进一步的，所述每个电阻阻值均相同为10-500Ω。
进一步的，所述衬底的材料折射率<1.40；波导的材料折射率>1.44。
一种如上所述的集成波导结构光子数分辨超导单光子探测器的制备方法：
(1)在氟化镁衬底上磁控溅射厚度为4-8nm的氮化铌超导薄膜；
(2)光刻转移电极掩模图案，磁控溅射厚度为120nm的金，并剥离出金电极；
(3)旋涂HSQ电子束光刻胶，用电子束套刻将纳米线图形转移到氮化铌薄膜上，然后采用反应离子刻蚀将多余的氮化铌刻蚀干净，得到超导纳米线阵列；
(4)光刻转移电阻掩模图案，磁控溅射厚度为40nm的钛，并剥离出钛电阻；
(5)旋涂PMMA电子束光刻胶，用电子束套刻将波导图形转移到衬底上，然后采用等离子体增强化学气相沉积淀积厚度200nm的SiOx，并剥离出SiOx波导。
进一步的，所述步骤(5)中等离子体增强化学气相沉积采用50℃低温条件生长。
超导纳米线单光子探测器是一种利用超导纳米线将光信号转换成电信号的高灵敏检测器，可检测到单光子级别的极微弱光信号，具有高探测效率、低暗记数、快速恢复和低时间抖动等特性。并且超导纳米线阵列器件具有实现分辨光子数目和高速探测的特性，在量子通信和量子计算中具有重要的应用前景。
与现有技术相比，本发明的优点在于：
本发明利用波导结构将超导纳米线单光子探测阵列器件应用于片上集成的量子光学集成电路，实现了可用于量子电路的具备分辨光子数量能力的单光子探测器，满足了量子应用中对单光子探测器的光子数分辨和高速探测应用需求。
附图说明
图1为本发明的结构示意图；
图2为本发明的等效电路图；
图3为具体实施例中4像元超导纳米线单光子探测阵列的响应脉冲图；
图4.为本发明的超导纳米线单光子探测阵列的工艺流程图；
图5为具体实施例中超导纳米线单光子探测阵列的测量系统示意图。
具体实施方式
下面结合附图和具体实施方式，进一步阐明本发明。
如图1所示，探测器检测光子部分为蜿蜒纳米线结构，共由4个单元串联构成。每个单元都由1根NbN蜿蜒纳米线并联一个Ti电阻组成，所有电阻的阻值均相同。每根蜿蜒纳米线总长120μm，宽60nm，纳米线间距40nm。SiOx介质层作为波导覆盖整个纳米区并向外延伸，用于传输入射光子。
如图2所示，工作时需要给纳米线提供略低于临界电流的偏置电流IB，由于纳米线是串联结构，所以一个电源即可给所有单元提供相同偏置，此时所有纳米线处于超导态。当任意一个单元纳米线吸收光子后，吸收区域的超导态被短时破坏，纳米线截断形成电阻区，纳米线上的偏置电路被分配到并联电阻RP端产生电压，随后纳米线又迅速自动恢复到超导态。在读出RL端表现为产生一个迅速上升、随后指数衰减的电压脉冲。
如图3所示，当多个单元同时响应时，电压脉冲幅度叠加。因此可以根据脉冲幅度值区分响应光子的数目。
SNSPD的探测速度与纳米线动态电感引起的恢复时间有关，纳米线的动态电感与纳米线的几何尺寸有关。纳米线越短，动态电感就越小，探测速度越快。对于SNSPD阵列器件，由于不同单元的光子计数率叠加，因此阵列单元数越大，探测速度也就越高。本专利提出的超导纳米线单光子探测阵列器件，单元纳米线动态电感小，阵列规模可拓展，可以用于微弱光的高速探测。
透明的SiOx材料在红外波段的损耗一般不超过0.1dB/km,是一种低损耗的光传导介质。采用PECVD方法在低折射率的氟化镁上淀积SiOx薄膜，形成SiOx-MgF2波导结构，完全覆盖在纳米线探测区，可有效将光能量聚集并被纳米线吸收。并且SiOx介质与半导体加工工艺兼容性高，SiOx波导有利于同其他无源元件共同集成在芯片上。
如图4所示，为波导耦合结构的超导纳米线单光子探测阵列器件的工艺流程。第一步，在氟化镁衬底上磁控溅射厚度为6nm的氮化铌超导薄膜；
第二步，光刻转移电极掩模图案，磁控溅射厚度为120nm的金，并剥离出金电极；第三步，旋涂HSQ电子束光刻胶，用电子束套刻将纳米线图形转移到氮化铌薄膜上，然后采用反应离子刻蚀将多余的氮化铌刻蚀干净，得到超导纳米线阵列；第四步，光刻转移电阻掩模图案，磁控溅射厚度为40nm的钛，并剥离出钛电阻；第五步，旋涂PMMA电子束光刻胶，用电子束套刻将波导图形转移到衬底上，然后采用等离子体增强化学气相沉积50℃条件下淀积厚度200nm的SiOx，并剥离出SiOx波导。
如图5所示，为波导耦合结构的超导纳米线单光子探测阵列器件的测量系统，主要分为光路系统、低温系统和读出电路。
光路系统主要由单光子源、可调光功率衰减器和光纤耦合器组成。单光子源提供微弱光信号，经可调衰减器和光纤耦合器将光子耦合到波导光路中，被超导探测器吸收。
低温系统主要是GM制冷机，可提供低于2.3K的工作温度，超导探测器置于制冷机的极低温中工作。
读出电路主要由直流源、Bias-T、低噪声放大器、计数器和示波器构成。直流源经Bias-T直流DC端给超导探测器提供直流偏置，Bias-T的DC/RF端连接超导探测器，低噪声放大器经Bias-T射频RF端将响应信号放大，信号再经由计数器读取光子计数或经由示波器读取信号幅度等信息。
以上所述仅为本发明的实施例子而已，并不用于限制本发明。凡在本发明的原则之内，所作的等同替换，均应包含在本发明的保护范围之内。本发明未作详细阐述的内容属于本专业领域技术人员公知的已有技术。
Claims (8)
1.一种集成波导结构光子数分辨超导单光子探测器，其特征在于，包括氟化镁基衬底和SiOx波导结构，所述氟化镁衬底与SiOx波导之间设置有由若干个单元串联的超导纳米线单光子探测阵列，每个单元由电阻和纳米线并联而成。
2.根据权利要求1所述的一种集成波导结构光子数分辨超导单光子探测器，其特征在于，所述SiOx波导覆盖所有纳米线。
3.根据权利要求1所述的一种集成波导结构光子数分辨超导单光子探测器，其特征在于，所述超导纳米线单光子探测阵列由若干根总长30-500μm，宽40-120nm的纳米线串联构成，纳米线占空比为20-80％。
4.根据权利要求1所述的一种集成波导结构光子数分辨超导单光子探测器，其特征在于，所述电阻为金属薄膜电阻；所述纳米线为超导纳米线。
5.根据权利要求1所述的一种集成波导结构光子数分辨超导单光子探测器，其特征在于，所述每个电阻阻值均相同为10-500Ω。
6.根据权利要求1所述的一种集成波导结构光子数分辨超导单光子探测器，其特征在于，所述衬底的材料折射率<1.40；波导的材料折射率>1.44。
7.一种如权利要求1至6之一所述的集成波导结构光子数分辨超导单光子探测器的制备方法：
(1)在氟化镁衬底上磁控溅射厚度为4-8nm的氮化铌超导薄膜；
(2)光刻转移电极掩模图案，磁控溅射厚度为120nm的金，并剥离出金电极；
(3)旋涂HSQ电子束光刻胶，用电子束套刻将纳米线图形转移到氮化铌薄膜上，然后采用反应离子刻蚀将多余的氮化铌刻蚀干净，得到超导纳米线阵列；
(4)光刻转移电阻掩模图案，磁控溅射厚度为40nm的钛，并剥离出钛电阻；
(5)旋涂PMMA电子束光刻胶，用电子束套刻将波导图形转移到衬底上，然后采用等离子体增强化学气相沉积淀积厚度200nm的SiOx，并剥离出SiOx波导。
8.根据权利要求7所述的一种集成波导结构光子数分辨超导单光子探测器的制备方法，其特征在于，所述步骤(5)中等离子体增强化学气相沉积采用50℃低温条件生长。
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