CN111129218A - Method for producing a solar cell and solar cell - Google Patents

Method for producing a solar cell and solar cell Download PDF

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CN111129218A
CN111129218A CN201911325295.9A CN201911325295A CN111129218A CN 111129218 A CN111129218 A CN 111129218A CN 201911325295 A CN201911325295 A CN 201911325295A CN 111129218 A CN111129218 A CN 111129218A
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silicon substrate
solar cell
solutes
aqueous solution
placing
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易紫莹
韩大伟
张小明
林纲正
陈刚
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Zhejiang Aiko Solar Energy Technology Co Ltd
Guangdong Aiko Solar Energy Technology Co Ltd
Tianjin Aiko Solar Energy Technology Co Ltd
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Zhejiang Aiko Solar Energy Technology Co Ltd
Guangdong Aiko Solar Energy Technology Co Ltd
Tianjin Aiko Solar Energy Technology Co Ltd
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Priority to CN201911325295.9A priority Critical patent/CN111129218A/en
Publication of CN111129218A publication Critical patent/CN111129218A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Methods for fabricating solar cells and solar cells are described herein. The method for manufacturing a solar cell described herein includes: etching the doped silicon substrate; placing the etched silicon substrate in an aqueous solution with organic solutes as solutes to clean the silicon substrate; and drying the cleaned silicon substrate. Solar cells fabricated using the method are also described. According to the embodiment of the disclosure, the phenomenon of small white spots on the surface of the solar cell can be improved, and the photoelectric conversion efficiency can be improved.

Description

Method for producing a solar cell and solar cell
Technical Field
Embodiments of the present disclosure relate generally to the field of solar cell technology, and more particularly, to a method for manufacturing a solar cell and a solar cell that improve a surface white spot phenomenon and improve photoelectric conversion efficiency.
Background
With the mass production of solar cells with PERC (passivated emitter and rear cell) structures and the matching of SE (selective emitter) technology, the photoelectric conversion efficiency of the crystalline silicon solar cell is greatly improved. In PERC + era, both sides of the double-sided solar cell can receive light and generate electricity. The light reflected by the ground or the lawn is irradiated to the back of the solar cell, so that the generated energy has larger gain. Meanwhile, in the process of preparing the solar cell with the PERC + structure, the unit consumption of printing back aluminum paste is reduced, so that the manufacturing cost of the crystalline silicon solar cell is reduced. Therefore, solar cells having a PERC + structure have gradually become a mainstream product in the market of crystalline silicon solar cells.
However, there are many problems in the process of preparing a solar cell having a PERC + structure. For example, in a wet etching process, external factors such as the cleanliness of space, the on-time of a semi-finished cell, and the like have a certain influence on the appearance of a solar cell. In addition, the phenomena of residual liquid medicine on the surface of the silicon substrate, raindrop-shaped bubble marks, liquid-carrying burn of the silicon substrate and the like not only affect the appearance of the finished solar cell, but also reduce the photoelectric conversion efficiency of the finished solar cell.
After deposition of the back-side passivated antireflective film, some phenomena may manifest themselves as small white dots visible to the naked eye. These small white spots have a severe impact on the appearance of the back side of a solar cell having a PERC + structure, resulting in a large number of semi-finished cells requiring rework processing. Moreover, the presence of small white spots results in the generation of defect states on the surface of the silicon substrate around which photogenerated carriers easily recombine, which reduces the open-circuit voltage and short-circuit current of the solar cell.
Therefore, it is desired to develop an improved scheme for a solar cell, which improves the photoelectric conversion efficiency of the solar cell while improving the surface white spot defect of the solar cell.
Disclosure of Invention
Generally, embodiments of the present disclosure provide methods for fabricating solar cells and solar cells fabricated thereby.
In a first aspect, a method for manufacturing a solar cell is provided. The method comprises the following steps: etching the doped silicon substrate; placing the etched silicon substrate in an aqueous solution with organic solutes as solutes to clean the silicon substrate; and drying the cleaned silicon substrate.
In some embodiments, placing the etched silicon substrate in an aqueous solution having solutes that are organic solutes comprises: placing the etched silicon substrate in an aqueous solution with a solute of at least one of ethanol, acetone, and isopropanol.
In some embodiments, placing the etched silicon substrate in an aqueous solution having solutes that are organic solutes comprises: placing the etched silicon substrate in the aqueous solution with a volume ratio of organic solute to water of between 1:5 and 1: 20.
In some embodiments, placing the etched silicon substrate in an aqueous solution having solutes that are organic solutes comprises: placing the etched silicon substrate in the aqueous solution with a volume ratio of organic solute to water of 1: 10.
In some embodiments, placing the etched silicon substrate in an aqueous solution having solutes that are organic solutes comprises: and placing the etched silicon substrate in the aqueous solution with the circulation flow of organic solute of 2L/min and the circulation flow of water of 20L/min.
In some embodiments, the method further comprises: polishing the doped silicon substrate by a first wet etch prior to etching the doped silicon substrate.
In some embodiments, etching the doped silicon substrate comprises: and removing the silicon oxide and the phosphorosilicate glass on the silicon substrate by a second wet etching.
In some embodiments, the method further comprises: after etching the doped silicon substrate and before placing the etched silicon substrate in an aqueous solution with solutes being organic solutes: cleaning the etched silicon substrate with water; and etching the cleaned silicon substrate by a third wet etching.
In some embodiments, the method further comprises: annealing the silicon substrate after drying the cleaned silicon substrate.
In a second aspect, a solar cell is provided. The solar cell is manufactured by the method described above.
According to the embodiments of the present disclosure, by cleaning the etched silicon substrate with a solution of an organic solute and water before the annealing process and after the etching process, the undesirable phenomenon of small white spots and defect states generated at the surface of the finished solar cell is prevented. Therefore, the class A rate of the finished solar cell is improved, the appearance defect of the surface of the finished solar cell is improved, and the photoelectric conversion efficiency of the solar cell is also improved.
This summary is provided to introduce a selection of the inventive concepts of the present disclosure in a simplified form that are further described below in the detailed description. This summary is not intended to identify key features or essential features of the disclosure, nor is it intended to be used to limit the scope of the disclosure.
Drawings
The above and other objects, features and advantages of the present disclosure will become more apparent by describing in more detail embodiments of the present disclosure with reference to the attached drawings in which:
fig. 1 is a flow chart illustrating a method for fabricating a solar cell according to an embodiment of the present disclosure;
fig. 2 is a flow chart illustrating a method for fabricating a solar cell according to another embodiment of the present disclosure;
FIG. 3 is a schematic diagram illustrating various stages of a method of fabricating a solar cell according to an embodiment of the present disclosure; and
fig. 4 is a schematic cross-sectional view illustrating a solar cell manufactured by a method according to an embodiment of the present disclosure.
Detailed Description
The principles of the present disclosure will be described below with reference to a number of example embodiments shown in the drawings. While the preferred embodiments of the present disclosure have been illustrated in the accompanying drawings, it is to be understood that these embodiments are described merely to enable those skilled in the art to better understand and to implement the present disclosure, and are not intended to limit the scope of the present disclosure in any way. In addition, the numerical values described in the example embodiments are merely exemplary, and aspects of the embodiments of the present disclosure are not limited to these numerical values and may have other numerical ranges.
Embodiments of the present disclosure provide improvements for solar cells. According to an embodiment of the present disclosure, after a wet etching process for a silicon substrate and before an annealing process, a proportion of organic solutes is added in a rinsing bath to clean the etched silicon substrate. The organic solute may include at least one of ethanol, acetone, and isopropanol. Such cleaning will dissolve part of the impurities on the silicon substrate surface and the chemical liquid remaining on the silicon substrate surface and reduce the generation of small bubbles at the silicon substrate surface. In this way, the generation of small white spots and surface defect states at the surface of the solar cell can be avoided. In this way, the photoelectric conversion efficiency of the solar cell is improved while eliminating the adverse effect of the appearance of small white spots at the surface of the solar cell.
The present disclosure will be described in detail below with reference to various embodiments in conjunction with the accompanying drawings.
Fig. 1 is a schematic diagram illustrating various stages of a method of fabricating a solar cell according to an embodiment of the present disclosure.
Starting from (a) in fig. 1, a silicon substrate is prepared. In some embodiments, P-type single crystal silicon is selected as the substrate.
As shown in fig. 1 (b), the surface of the silicon substrate is textured. In some embodiments, a textured surface is formed on a surface of the silicon substrate by a wet etching process.
Next, the silicon substrate is diffused, as shown in fig. 1 (c). In some embodiments, the POCl is diffused in the silicon substrate3To form a PN junction in the silicon substrate. In addition, phosphosilicate glass (PSG) may be formed on the surface of the silicon substrate by diffusion.
Subsequently, the silicon substrate is subjected to front-side lasing, as shown in fig. 1 (d). In some embodiments, the surface of the silicon substrate is heavily doped with a laser and a suitable sheet resistance is prepared.
As shown in (e) of fig. 1, the silicon substrate is etched. In some embodiments, a silicon substrate is back-polished using a hydrofluoric acid and nitric acid solution. Then, in some embodiments, the PSG and silicon oxide formed on the surface of the silicon substrate are removed using a hydrofluoric acid solution. Next, in some embodiments, the silicon substrate is placed in a rinsing bath to which a certain amount of organic solute is added to clean the silicon substrate. In some embodiments, the organic solute may include at least one of ethanol, acetone, and isopropanol.
Then, the silicon substrate is annealed as shown in (f) of fig. 1. In some embodiments, phosphorus atoms in the dead layer of the silicon substrate surface are reactivated by annealing, dangling bonds are repaired, and a silicon dioxide layer is formed.
As shown in (g) of fig. 1, a back passivation film is deposited on the back surface of the silicon substrate, and a front passivation film is deposited on the front surface of the silicon substrate. In some embodiments, an aluminum oxide layer, a silicon oxide layer, and a silicon nitride layer are sequentially deposited on the back surface of the silicon substrate. In some embodiments, a silicon nitride layer is deposited on the front surface of the silicon substrate to reduce the reflectivity and reduce the surface recombination velocity of the silicon substrate.
As shown in fig. 1 (h), the silicon substrate is subjected to back laser opening. In some embodiments, a portion of the passivation film on the back surface of the silicon substrate is removed.
Finally, as shown in (i) of fig. 1, an electrode layer is printed on the silicon substrate. In some embodiments, a silver back electrode and an aluminum back metal layer are formed on the back surface of the silicon substrate using a back silver paste and an aluminum paste, respectively. In some embodiments, a positive silver electrode is formed on the front surface of the silicon substrate using a positive silver paste. In some embodiments, each contact electrode is formed after baking and sintering by a screen printing process.
According to the embodiments of the present disclosure, in order to at least solve the bad influence of the appearance of small white spots at the surface of the solar cell, and to improve the photoelectric conversion efficiency of the solar cell, in one example, the etched silicon substrate may be cleaned with an organic solute aqueous solution in a stage as shown in (e) of fig. 1.
Fig. 2 is a flow chart illustrating a method 100 for fabricating a solar cell according to an embodiment of the present disclosure. As shown in fig. 2, the method 200 includes etching a doped silicon substrate (block 204), placing the etched silicon substrate in an aqueous solution with solutes that are organic solutes to clean the silicon substrate (block 210), and drying the cleaned silicon substrate (block 212).
According to an embodiment of the present disclosure, the etched silicon substrate is cleaned using an aqueous solution of organic solutes. The organic solute may include at least one of ethanol, acetone, and isopropanol. The organic solute is capable of dissolving a chemical solution remaining at the surface of the silicon substrate and/or a part of impurities at the surface of the silicon substrate during etching. By performing the cleaning with the organic solute aqueous solution, it is possible to reduce the generation of small bubbles at the surface of the silicon substrate to avoid the generation of bubble marks at the surface of the silicon substrate after drying. In addition, the cleaning of the organic solute aqueous solution can prevent a part of impurities on the surface of the silicon substrate from being brought into the annealing process. Further, when the silicon substrate after being cleaned and dried is annealed, it is possible to eliminate the phenomenon of liquid-carrying burn at the surface of the silicon substrate and to prevent the generation of a defect state at the surface of the silicon substrate. In this way, the photoelectric conversion efficiency of the solar cell is improved while eliminating small white spots on the surface of the solar cell.
In some embodiments, optionally at block 202, the doped silicon substrate may be polished. In some embodiments, the doped silicon substrate may be polished by a first wet etch. When the silicon substrate is polished, etching of the silicon substrate may be accompanied. In some embodiments, the back surface of the silicon substrate may be polished. In some embodiments, the first wet etch may use hydrofluoric acid and nitric acid.
At block 204, the doped silicon substrate is etched. In some embodiments, etching the doped silicon substrate includes removing silicon oxide on the silicon substrate by a second wet etch. In some embodiments, the silicon oxide on the front and back surfaces of the silicon substrate may be removed by a second wet etch. In some embodiments, PSG (phosphosilicate glass) on the silicon substrate may be removed by a second wet etch. The PSG is left during doping and diffusion of the silicon substrate. In some embodiments, the second wet etch may use hydrofluoric acid.
In some embodiments, the etched silicon substrate may be rinsed with water, optionally at block 206.
In some embodiments, the cleaned silicon substrate is etched by a third wet etch, optionally at block 208. In some embodiments, the lack of etching at block 204 may be prevented by a third wet etch. That is, the silicon oxide and/or the PSG on the surface of the silicon substrate is further removed by the third wet etching. In some embodiments, the third wet etching may use hydrofluoric acid, and a Si — F bond is established at the surface of the silicon substrate by the third wet etching to facilitate later drying of the silicon substrate. In some embodiments, the concentration of hydrofluoric acid used in the third wet etch is lower than the concentration of hydrofluoric acid used in the second wet etch.
At block 210, the etched silicon substrate is placed in an aqueous solution with solutes that are organic solutes to clean the silicon substrate. In some embodiments, the etched silicon substrate is placed in a water bath into which organic solutes are added.
In some embodiments, the organic solute may include one of ethanol, acetone, and isopropanol. Isopropanol is more costly than ethanol. In addition, although acetone may have a better cleaning effect than ethanol, acetone has a certain toxicity and causes environmental pollution. In some embodiments, the organic solute comprises ethanol. In other embodiments, the organic solute may include any combination of ethanol, acetone, and isopropanol.
In some embodiments, the aqueous solution has a volume ratio of organic solute to water between 1:5 and 1: 20. In some embodiments, the aqueous solution has a volume ratio of organic solute to water of 1: 10. In some embodiments, the circulation flow rate of the organic solute in the water tank is 2L/min and the circulation flow rate of the water is 20L/min.
At block 212, the cleaned silicon substrate is dried. In some embodiments, the silicon substrate is baked using a hot gas flow. In some embodiments, the silicon substrate is baked using a hot nitrogen gas flow.
In some embodiments, the silicon substrate is optionally annealed at block 214. In some embodiments, the phosphorus atoms on the surface of the silicon substrate may be reactivated by annealing, repairing dangling bonds, and forming a silicon oxide layer. Since the etched silicon substrate is cleaned with the aqueous solution of organic solute at block 210, there is no portion of impurities and residual chemical solution at the surface of the silicon substrate to be subjected to annealing. Therefore, after the annealing and the subsequent processes, the number of small white spots existing at the surface of the solar cell is controlled within a predetermined range, thereby remarkably improving the undesirable phenomena of white spots and defective states at the surface of the solar cell.
Fig. 3 is a flow chart illustrating a method 300 for fabricating a solar cell according to another embodiment of the present disclosure. Method 300 may be implemented as an example of method 200, however method 200 is not limited to implementation of method 300.
At block 302, a water film is applied to the front surface of the front side lased silicon substrate to enter the etch trench. The water film can prevent the etching liquid in the etching groove from climbing to the front surface of the silicon substrate. In some embodiments, 20ml of water is applied to the surface of the silicon substrate.
Prior to block 302, the silicon substrate for the solar cell is subjected to related processes known in the art. For example, the silicon substrate may be subjected to texturing, diffusion, front side laser, and the like. And forming a suede on the surface of the silicon substrate through a suede making process. Through the diffusion process, a PN junction is formed in the silicon substrate. And heavily doping the surface of the silicon substrate through a front laser process.
At block 304, the back surface of the silicon substrate is etched and polished with hydrofluoric acid and nitric acid. In some embodiments, the temperature of the etched trenches is set at 15 ℃ and the initial dose is set as water as follows: 90-100L, HF: 30-40L, HNO3：80-95L、H2SO4: 20-35L, the dosage of the fluid infusion is set as water as follows: (0.1-0.6) L/100pcs, HF: (0.1-0.7) L/100pcs, HNO3：(0.1-0.8)L/100pcs、H2SO4: (0.01-0.3) L/100pcs, and the circulation flow rate was set to 35L/min.
At block 306, the silicon substrate is passed through a rinsing bath to clean the silicon substrate. In some embodiments, the circulation flow rate of the rinse tank is set to 30L/min.
At block 308, the alkali solution remaining on the surface of the silicon substrate after the previous etch is neutralized with potassium hydroxide. In some embodiments, the initial charge of the caustic bath is set as water as follows: 60-75L, KOH: 1-10L, the dosage of the fluid infusion is set as water as follows: (0.02-0.5) L/500pcs, KOH: (0.01-0.5) L/500pcs, and the circulation flow rate was set to 35L/min.
At block 310, the silicon substrate is passed through a rinsing bath to clean the silicon substrate. In some embodiments, the circulation flow rate of the rinse tank is set to 30L/min.
At block 312, the alkali solution is neutralized with hydrofluoric acid, and the silicon oxide on the surface of the silicon substrate is removed by the hydrofluoric acid. Further, the PSG on the surface of the silicon substrate can be removed by hydrofluoric acid. In some embodiments, the initial charge of the pickle tank is set to water as follows: 170-190L, HF: 30-50L, and the dosage of the fluid infusion is set as water as follows: (0.01-0.4) L/500pcs, HF: (0.05-0.6) L/500pcs, and the circulation flow rate was set to 100L/min.
At block 314, the silicon substrate is passed through a rinsing bath to clean the silicon substrate. In some embodiments, the circulation flow rate of the rinse tank is set to 30L/min.
At block 316, the silicon substrate is etched with hydrofluoric acid to prevent underetching. In some embodiments, the initial charge of the pickle tank is set to water as follows: 50-75L, HF: 3-15L, the dosage of the fluid infusion is set as water as follows: (0.01-0.5) L/500pcs, HF: (0.01-0.7) L/500pcs, and the circulation flow rate was set to 85L/min.
At block 318, the silicon substrate is passed through a rinsing bath to which organic solutes are added to clean the silicon substrate. In some embodiments, the organic solute may include at least one of ethanol, acetone, and isopropanol. In some embodiments, the organic solute comprises ethanol. In some embodiments, the volume ratio of organic solute to water is 1:10, the circulation flow rate of water is 20L/min, and the flow rate of organic solute is 2L/min.
At block 320, the silicon wafer is dried with hot air. In some embodiments, the drying temperature is set to 55 ℃ and the circulation flow rate is set to 200L/min.
Tables 1 and 2 below show a comparison of test results for solar cells manufactured according to method 300 of embodiments of the present disclosure and solar cells manufactured according to conventional methods. In tables 1 and 2, EXP corresponds to the test results of the solar cell manufactured according to the method 300 of the embodiment of the present disclosure, and BL corresponds to the test results of the solar cell manufactured according to the conventional method.
TABLE 1
Figure BDA0002328236790000091
As can be seen from table 1, the small white spot phenomenon of the solar cell manufactured by the method 300 according to the embodiment of the present disclosure is significantly improved. For example, the adverse effect of small white spots is to reduce the proportion of the silicon substrate present from 0.85% to 0.
TABLE 2
Figure BDA0002328236790000092
In addition, as can be seen from table 2, the open circuit voltage of the solar cell fabricated according to method 300 of an embodiment of the present disclosure is superior to the open circuit voltage of the solar cell fabricated according to the conventional method, for example, by 0.9 mV. Furthermore, the conversion efficiency of the solar cell fabricated according to the method 300 of the embodiments of the present disclosure is increased. For example, the efficiency is increased by about 0.05%.
Fig. 4 is a schematic cross-sectional view illustrating a solar cell 400 manufactured by a method according to an embodiment of the present disclosure. As shown in fig. 4, the solar cell 400 includes a silicon substrate 402, and an aluminum oxide layer 404, a silicon oxide layer 406, a silicon nitride layer 408, an aluminum back metal layer 410, and a silver back electrode 412 formed on the back surface of the silicon substrate 402. In addition, the solar cell 400 includes a silicon oxide layer 414, a silicon nitride layer 416, and a silver positive electrode 418 formed on the front surface of the silicon substrate 402.
Further, the silicon substrate 402 includes a PN junction. In some embodiments, the silicon substrate 402 is a P-type substrate, and the silicon substrate 402 includes an N + + layer and an N + layer formed therein.
According to the embodiment of the present disclosure, white spots and surface defect states of the surface of the solar cell 400, particularly at the back surface, are significantly improved.
According to the embodiment of the present disclosure, before annealing the silicon substrate, by cleaning the silicon substrate subjected to back etching with an aqueous solution of an organic solute, a part of impurities and a residual liquid medicine on the surface of the silicon substrate are removed, raindrop-like bubble marks are eliminated, and liquid-carrying burn of the silicon substrate and the like are prevented. Therefore, the appearance defect of small white spots of the finished solar cell is obviously improved, and the photoelectric conversion efficiency of the finished solar cell is improved.
The above description is merely an alternative embodiment of the present disclosure and is not intended to limit the present disclosure. Various alternatives, modifications, and variations can be devised by those skilled in the art without departing from the spirit and principles of the disclosure. The present disclosure is intended to embrace all such alternatives, modifications and variances which fall within the scope of the appended claims.

Claims (10)

1. A method for fabricating a solar cell, comprising:
etching the doped silicon substrate;
placing the etched silicon substrate in an aqueous solution with organic solutes as solutes to clean the silicon substrate; and
drying the cleaned silicon substrate.
2. The method of claim 1, wherein placing the etched silicon substrate in an aqueous solution having solutes that are organic solutes comprises: placing the etched silicon substrate in an aqueous solution with a solute of at least one of ethanol, acetone, and isopropanol.
3. The method of claim 2, wherein placing the etched silicon substrate in an aqueous solution having solutes that are organic solutes comprises: placing the etched silicon substrate in the aqueous solution with a volume ratio of organic solute to water of between 1:5 and 1: 20.
4. The method of claim 3, wherein placing the etched silicon substrate in an aqueous solution with solutes that are organic solutes comprises: placing the etched silicon substrate in the aqueous solution with a volume ratio of organic solute to water of 1: 10.
5. The method of claim 4, wherein placing the etched silicon substrate in an aqueous solution with solutes that are organic solutes comprises: and placing the etched silicon substrate in the aqueous solution with the circulation flow of organic solute of 2L/min and the circulation flow of water of 20L/min.
6. The method of claim 1, further comprising:
polishing the doped silicon substrate by a first wet etch prior to etching the doped silicon substrate.
7. The method of claim 6, wherein etching the doped silicon substrate comprises: and removing the silicon oxide and the phosphorosilicate glass on the silicon substrate by a second wet etching.
8. The method of any of claims 1 to 7, further comprising:
after etching the doped silicon substrate and before placing the etched silicon substrate in an aqueous solution with solutes being organic solutes:
cleaning the etched silicon substrate with water; and
etching the cleaned silicon substrate by a third wet etching.
9. The method of any of claims 1 to 7, further comprising:
annealing the silicon substrate after drying the cleaned silicon substrate.
10. A solar cell fabricated according to the method of any one of claims 1 to 9.
CN201911325295.9A 2019-12-20 2019-12-20 Method for producing a solar cell and solar cell Pending CN111129218A (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109360869A (en) * 2018-11-23 2019-02-19 浙江昱辉阳光能源江苏有限公司 A kind of low cost black silicon solar cell production method
CN109755099A (en) * 2017-11-01 2019-05-14 天津环鑫科技发展有限公司 Cleaning process after a kind of diffusion of silicon wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109755099A (en) * 2017-11-01 2019-05-14 天津环鑫科技发展有限公司 Cleaning process after a kind of diffusion of silicon wafer
CN109360869A (en) * 2018-11-23 2019-02-19 浙江昱辉阳光能源江苏有限公司 A kind of low cost black silicon solar cell production method

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Application publication date: 20200508