CN111129200B - Gain peak adjustable germanium-silicon photoelectric detector - Google Patents
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- CN111129200B CN111129200B CN201911382300.XA CN201911382300A CN111129200B CN 111129200 B CN111129200 B CN 111129200B CN 201911382300 A CN201911382300 A CN 201911382300A CN 111129200 B CN111129200 B CN 111129200B
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- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title claims abstract description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 36
- 239000010703 silicon Substances 0.000 claims abstract description 36
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 22
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 75
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 30
- 229910021389 graphene Inorganic materials 0.000 claims description 30
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 21
- 239000004020 conductor Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 8
- 239000011241 protective layer Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
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Abstract
The application relates to a gain peak adjustable germanium-silicon photoelectric detector, germanium-silicon photoelectric detector includes from bottom to top: the silicon substrate layer, the buried oxide layer, the silicon waveguide layer, the germanium active layer and the insulating covering layer, and the germanium-silicon photoelectric detector further comprises an adjustable bandwidth gain component arranged on the germanium active layer. According to the germanium-silicon photoelectric detector with the adjustable bandwidth gain component, the problem of bandwidth gain difference caused by difference between different individuals of the germanium-silicon photoelectric detector can be solved through the adjustable bandwidth gain component, and the optimal bandwidth gain for each germanium-silicon photoelectric detector is realized.
Description
Technical Field
The invention relates to the field of optical communication, in particular to a germanium-silicon photoelectric detector with an adjustable gain peak.
Background
In a semiconductor photodetector, when the photodetector is exposed to a light source, the photodetector absorbs light energy through a detection material and converts the light energy into an electronic signal to output a current, and the principle can be used in the fields of optical communication and optical detection.
Silicon-based photonic technology is an industry direction widely accepted by the industry in recent years, and silicon-germanium photoelectric detectors based on silicon photonic technology have also been rapidly developed. The bandwidth of a sige photodetector is greatly limited by the parasitic capacitance of the sige photodetector. Parasitic capacitance is undesirable from a design standpoint, and is an inherent property of photodetectors. In order to eliminate the influence of parasitic capacitance and improve the bandwidth of the sige photodetector, a recent emerging technical approach is to integrate an inductor on a silicon optical chip, that is, the inductor is formed by using a metal wire and is matched with the parasitic capacitance to form a bandwidth gain peak, so as to improve the 3dB bandwidth of the sige photodetector.
However, in the current technology, the inductance of the metal wire integrated into the photodetector is fixed and does not change after the fabrication. Due to the manufacturing process problem, the intrinsic characteristics of the photodetectors have certain difference among different individuals, so that the bandwidth gain peak value required by each photodetector also has difference.
Disclosure of Invention
Therefore, the invention provides a new structure of the silicon germanium photoelectric detector, and the silicon germanium photoelectric detector is integrated with an adjustable bandwidth gain component, so that the gain peak value can be adjusted through the component, and the silicon germanium photoelectric detector has the optimal bandwidth gain.
Specifically, the technical scheme of the invention is as follows:
the invention provides a germanium-silicon photoelectric detector with an adjustable gain peak, which comprises the following components from bottom to top: the silicon-germanium photoelectric detector comprises a silicon substrate layer, a buried oxide layer, a silicon waveguide layer, a germanium active layer and an insulating covering layer, and is characterized by further comprising an adjustable bandwidth gain component arranged on the germanium active layer.
Further, the tunable bandwidth gain component includes a graphene signal conductor and a control electrode spaced apart by a predetermined distance, and the control electrode is configured to apply a voltage to the graphene signal conductor to achieve a tunable matching inductance.
According to one embodiment, the graphene signal conductor is in direct contact with the germanium active layer.
According to one embodiment, the graphene signal wire has a folded-back U-shape or a clip-shape.
According to one embodiment, the graphene signal conductor may be integrated with a silicon germanium photodetector using a transfer method.
According to one embodiment, the control electrode is located directly above the graphene signal conductor and has the same orientation as the graphene signal conductor.
According to one embodiment, the silicon waveguide layer has a spot conversion structure.
According to one embodiment, the silicon germanium photodetector further comprises a protective layer located on the outermost layer.
According to the germanium-silicon photoelectric detector with the adjustable bandwidth gain component, the problem of difference of bandwidth gain parameters caused by difference of different individuals of the germanium-silicon photoelectric detector can be solved through the adjustable bandwidth gain component, and the optimal bandwidth gain of each germanium-silicon photoelectric detector is realized.
Drawings
FIG. 1 is an isometric view of a bandwidth-enhanced SiGe photodetector with adjustable gain peaks according to an embodiment of the present invention; and
fig. 2 is a side view of a bandwidth enhanced sige photodetector with adjustable gain peak in an embodiment of the present invention.
Reference numerals: a silicon substrate layer: 100, 110: buried oxide layer, 120: silicon waveguide layer, 130: germanium active layer, 140a, 140 b: insulating cover layer, 150: adjustable bandwidth gain component, 1501: graphene signal wire, 1502: and a control electrode.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention without any inventive step, are within the scope of protection of the invention.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by those skilled in the art to which the invention pertains. The word "comprising" or "comprises", and the like, in this disclosure is intended to mean that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
It should be noted that the thicknesses, sizes and shapes of the various layer structures in the drawings do not reflect the true scale of the photodetector, and are merely illustrative of the present disclosure.
An embodiment of the present invention provides a silicon germanium photodetector, and referring to fig. 1 to fig. 2, fig. 1 is an isometric view of a bandwidth-enhanced silicon germanium photodetector with an adjustable gain peak in an embodiment of the present invention, and fig. 2 is a side view of a bandwidth-enhanced silicon germanium photodetector with an adjustable gain peak in an embodiment of the present invention.
In one embodiment, the silicon germanium photodetector is stacked with a silicon substrate layer 100, a silicon buried oxide layer 110, a silicon waveguide layer 120, a germanium active layer 130, an insulating cap layer 140a, and a tunable bandwidth gain component 150 from bottom to top in sequence.
In a specific embodiment, the tunable bandwidth gain module 150 includes a signal conductor 1501, and a control electrode 1502.
The structure and the manufacturing method of the germanium-silicon photoelectric detector with adjustable gain peak according to the present invention will be described in detail below with reference to the accompanying drawings.
The Silicon germanium photodetector in this embodiment is manufactured based On a mature Silicon On Insulator (SOI) process. SOI comprises a back substrate 100, a buried oxide layer 110, and a silicon waveguide layer 120.
Using an SOI process, a desired silicon waveguide is fabricated on the silicon waveguide layer 120 for receiving an optical signal and guiding the propagation direction of the optical signal. The geometry of the silicon waveguide layer 120 is arbitrary and may be selected according to the actual application of the photodetector, such as a slab, strip or ridge waveguide structure. In one embodiment, a tapered waveguide structure such as that shown in FIG. 1 is selected for mode spot conversion.
Generally, in order to couple an optical signal into a waveguide layer and improve the coupling efficiency of a silicon optical device with the inside and the outside, a Spot Size Converter (SSC) or a Spot Size Converter is generally designed in a silicon waveguide. At present, the spot size converters generally used include, but are not limited to, forward tapered spot size converters, reverse tapered spot size converters, multi-stage tapered spot size converters, multi-waveguide spot size converters, three-dimensional tapered spot size converters, and the like.
Next, a germanium active layer 130 is grown on the silicon waveguide layer 120, which receives the optical signal from the silicon waveguide layer 120, converts the optical signal into an electrical signal, and is output from the upper surface of the germanium active layer 130.
Further, the silicon waveguide layer 120 and the germanium active layer 130 are first completely covered with the insulating capping layer 140a, and then the thickness of the insulating capping layer 140a is appropriately thinned until the top portion of the germanium active layer 130 is exposed. The insulating cap layer 140a is typically SiO, which is commonly used in the art2Materials, but not limited thereto.
In the prior art, a metal wire inductor connected with a germanium active layer is further manufactured on the basis of a stacked structure formed by a silicon substrate layer, a silicon buried oxide layer, a silicon waveguide layer, a germanium active layer and an insulating cover layer to form a germanium-silicon photoelectric detector.
However, the present inventors have found that there is a problem in that performance of the silicon germanium photodetector varies between different individuals. Although reducing or eliminating the variation among different elements of the sige photodetector can be partially solved by optimizing the manufacturing process or improving the manufacturing accuracy, it is very demanding for the related equipment and process. Even so, this approach still cannot completely eliminate the problem of bandwidth performance difference existing between sige photodetector products.
Therefore, the invention provides the germanium-silicon photoelectric detector with the adjustable bandwidth gain component, which can optimize the bandwidth characteristics of each germanium-silicon photoelectric detector by optimally configuring each germanium-silicon photoelectric detector under the existing equipment and conventional manufacturing requirements. Specifically, the adjustable bandwidth gain component provided by the invention comprises a graphene signal wire and a control circuit, wherein an electric signal output by the germanium-silicon photoelectric detector is transmitted in the graphene signal wire, different voltages are applied to the graphene signal wire through the control circuit, and the inductance value of the graphene signal wire is changed, so that the bandwidth gain of the germanium-silicon photoelectric detector provided by the invention can be adjusted, and the bandwidth performance of the germanium-silicon photoelectric detector provided by the invention is optimized. And because the bandwidth gain of the germanium-silicon photoelectric detector can be adjusted within a certain range through the bandwidth gain component, even if certain inconsistency exists among different germanium-silicon photoelectric detector individuals, the required optimized bandwidth gain can be achieved by applying proper voltage to the graphene signal wire. Therefore, the performance of the germanium-silicon photoelectric detector has a remarkable improvement effect.
The structure and fabrication method of the sige photodetector with tunable bandwidth gain module according to the present invention will be described below.
Specifically, the tunable bandwidth gain element 150 is fabricated on the above-mentioned stacked structure of the silicon substrate layer 100, the buried oxide layer 110, the silicon waveguide layer 120, the germanium active layer 130, and the insulating cap layer 140 a.
The method and principles of making the tunable bandwidth gain module 150 of the present invention will be described in detail below.
In order to make the signal wire have enhanced inductance characteristics, the invention particularly uses a graphene signal wire, and particularly the graphene signal wire adopts a U-shaped turn-back-shaped routing, as shown in FIG. 1, and the graphene signal wire arranged in such a way has a wider inductance adjusting space.
The signal wire 1501 prepared in advance is transferred to the stacked structure of the silicon substrate layer 100, the buried oxide layer 110, the silicon waveguide layer 120, the germanium active layer 130, and the insulating cap layer 140a through a conventional transfer process, and is connected to the exposed portion of the germanium active layer 130, whereby an electrical signal output from the germanium active layer 130 is introduced into the signal wire 1501.
Subsequently, the germanium active layer 130 and the signal wire 1501 are again covered with the insulating cover layer 140b is covered. Preferably, the insulating cover layer 140b covering the signal wire 1501 uses the same material as the insulating cover layer 140a used above for covering the silicon waveguide layer 120, i.e., SiO2A material. In terms of form, the two-time formed cladding layers (i.e. 140a, 140b) of the silicon germanium photodetector of the present invention are formed in an integrated manner, completely encapsulating the silicon buried oxide layer 110, the silicon waveguide layer 120, the germanium active layer 130 and the signal wire 1501.
Finally, a control electrode 1502 is fabricated on the above structure. It will be appreciated that the control electrode 1502 is formed on the insulating cap layer 140 b.
It will be appreciated that the control electrodes 1502 and signal conductors 1501 are separated by an insulating cover layer 140 b. A person skilled in the art can set the predetermined distance of the interval, i.e., adjust the height of the portion of the insulating cover layer 140b above the signal wire 1501, according to the inductance of the graphene signal wire, the voltage range of the control electrode, the inductance target range of the signal wire, and the like.
Since the dynamic inductance of the graphene signal wire is related to the graphene electron transport state, which can be adjusted by the gate voltage, different voltages v (as shown in fig. 2) can be applied to the graphene signal wire 1501 located right below through the control electrode 1502 to change the gate voltage of the graphene, so as to change the inductance value of the graphene signal wire 1501, and thus obtain a desired or predetermined bandwidth gain.
A protective layer (not shown in the figure) may also be formed on the outermost layer of the stacked structure of the above-described sige photodetector. In specific application, SiO can be selected2As a material for the protective layer.
The germanium-silicon photoelectric detection integrated with the adjustable bandwidth gain component provided by the invention can flexibly change the gain peak effect aiming at different transmission links in the application of a transmission system, thereby optimizing the working parameters and the system performance of a photoelectric device.
Finally, it should be noted that the above-mentioned embodiments are only for illustrating the technical solutions of the present invention and not for limiting, and it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, which should be covered by the claims of the present invention.
Claims (7)
1. The germanium-silicon photoelectric detector with the adjustable gain peak comprises a silicon substrate layer, a buried oxide layer, a silicon waveguide layer, a germanium active layer and an insulating covering layer from bottom to top, and is characterized by further comprising an adjustable bandwidth gain component arranged on the germanium active layer, wherein the adjustable bandwidth gain component comprises a graphene signal wire and a control electrode which are spaced at a preset distance, and the control electrode is configured to apply variable voltage to the graphene signal wire so as to realize adjustment of a gain peak value.
2. The germanium-silicon photodetector of claim 1, wherein said graphene signal conductor is in direct contact with said germanium active layer.
3. The silicon-germanium photodetector of claim 1, wherein the graphene signal wire has a folded-back U-shape or a clip-shape.
4. The silicon germanium photodetector of claim 1, wherein said graphene signal conductor may be integrated with the silicon germanium photodetector using a transfer method.
5. The silicon germanium photodetector of claim 1, wherein said control electrode is directly above said graphene signal conductor and has the same orientation as said graphene signal conductor.
6. The silicon germanium photodetector of claim 1, wherein the silicon waveguide layer has a spot conversion structure.
7. The silicon germanium photodetector of any one of claims 1 to 6, further comprising a protective layer located on the outermost layer.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001189488A (en) * | 1999-12-27 | 2001-07-10 | Toshiba Corp | Integrated optical semiconductor element |
| CN105810774A (en) * | 2016-03-30 | 2016-07-27 | 华中科技大学 | High-power broadband germanium-silicon photoelectric detector |
| CN105914201A (en) * | 2016-05-03 | 2016-08-31 | 武汉大学 | Graphene sheet crossing adjustable inductance and method for performing the same |
| CN205723580U (en) * | 2016-05-09 | 2016-11-23 | 厦门市计量检定测试院 | Si base Ge Hybrid waveguide photodetector |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101771427B1 (en) * | 2011-11-02 | 2017-09-05 | 삼성전자주식회사 | Waveguide-integrated graphene photodetector |
| CN106328751A (en) * | 2015-07-02 | 2017-01-11 | 中兴通讯股份有限公司 | Silicon-based germanium photodetector |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001189488A (en) * | 1999-12-27 | 2001-07-10 | Toshiba Corp | Integrated optical semiconductor element |
| CN105810774A (en) * | 2016-03-30 | 2016-07-27 | 华中科技大学 | High-power broadband germanium-silicon photoelectric detector |
| CN105914201A (en) * | 2016-05-03 | 2016-08-31 | 武汉大学 | Graphene sheet crossing adjustable inductance and method for performing the same |
| CN205723580U (en) * | 2016-05-09 | 2016-11-23 | 厦门市计量检定测试院 | Si base Ge Hybrid waveguide photodetector |
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