CN111129196B - Germanium-based laminated solar cell and preparation method thereof - Google Patents
Germanium-based laminated solar cell and preparation method thereof Download PDFInfo
- Publication number
- CN111129196B CN111129196B CN201911355509.7A CN201911355509A CN111129196B CN 111129196 B CN111129196 B CN 111129196B CN 201911355509 A CN201911355509 A CN 201911355509A CN 111129196 B CN111129196 B CN 111129196B
- Authority
- CN
- China
- Prior art keywords
- solar cell
- gaas
- junction
- cell
- lattice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 17
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 24
- 230000005641 tunneling Effects 0.000 claims description 22
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 238000000407 epitaxy Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910017464 nitrogen compound Inorganic materials 0.000 description 2
- 150000002830 nitrogen compounds Chemical class 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000011712 cell development Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a germanium-based laminated solar cell and a preparation method thereof, belonging to the technical field of solar cells, and characterized in that: comprising AlGaInP/AlGaAs/GaAs/Ga based on GaAs substrate reverse growth x In 1‑x As four-junction solar cell; lattice-mismatched Ga based on forward growth of Ge substrate y In 1‑y An As/Ge double junction solar cell; the four-junction solar cell and the double-junction solar cell are integrated into AlGaInP/AlGaAs/GaAs/Ga by adopting a bonding method x In 1‑x As/Ga y In 1‑y An As/Ge six-junction solar cell. In the technical scheme, the epitaxy process of the germanium-based laminated solar cell only involves two lattice gradient buffer layers, and the preparation process of part of devices of the six-junction solar cell can be compatible with the process of the Ge-based three-junction solar cell device which is mature in application in the prior art, so that the preparation difficulty and cost of the cell can be reduced.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a germanium-based laminated solar cell and a preparation method thereof.
Background
Because of the higher photoelectric conversion efficiency that can be obtained, III-V stacked solar cells are widely used in space power systems and ground concentrating photovoltaic power systems. At present, the III-V group laminated solar cell with the most mature technology and the most widely applied technology is a GaInP/Ga (In) As/Ge three-junction solar cell, and the photoelectric conversion efficiency of the three-junction solar cell under an AM0 spectrum is up to 30%. In order to continue to increase the efficiency of solar cells to achieve efficient absorption and utilization of the solar spectrum, III-V solar cells are evolving towards more structures. Currently, five junction solar cell technology has been developed in the united states spectroscopy laboratory, with a typical bandgap structure of 2.05/1.7/1.42/1.0/0.73eV, and an efficiency of 35.8% in the AM0 spectrum. However, in order to further improve the photoelectric conversion efficiency of the stacked solar cell, the number of subcell junctions needs to be further increased. In theory, the more the number of junctions of the stacked solar cell is, the finer the division of the solar spectrum is, and the band gap distribution of the cell is more matched with the energy of the solar spectrum, so that the thermalization loss of the photogenerated carriers is reduced, and the corresponding efficiency is improved. Therefore, six-junction solar cells will become the direction of future stacked solar cell development, and are receiving increasing attention.
The current technical approach for realizing the six-junction solar cell mainly adopts a dilute nitrogen compound GaInAsN as a 1.1eV subcell to prepare two kinds of lattice-matched six-junction solar cells and reversely-grown lattice-mismatched six-junction solar cells. The method of adopting the dilute nitrogen compound GaInAsN As the 1.1eV subcell material is to sequentially epitaxially grow GaInAsN (1.1 eV) subcells, gaInAs (1.4 eV) subcells, alGa (In) As (1.6 eV) subcells, gaInP subcells (1.9 eV) and AlGaInP (2.0 eV) subcells on a germanium substrate (Ge subcell: 0.67 eV), so that the overall efficiency of the laminated cell is low due to the fact that the crystal quality of the GaInAsN epitaxial material grown by the current technical means is poor. The preparation method of the reverse growth lattice mismatch six-junction solar cell comprises the following steps: alGaInP (2.1 eV) subcells, alGaAs (1.7 eV) subcells, gaAs (1.42 eV) subcells, lattice mismatch graded layer A, gaInAs (1.1 eV) subcells, lattice mismatch graded layer B, gaInAs (0.9 eV) subcells, lattice mismatch graded layer 3 and GaInAs (0.7 eV) subcells are sequentially and reversely grown on a GaAs substrate, then bonded on a supporting substrate such as Si and finally corroded to obtain a six-junction solar cell, but the method needs to grow three lattice mismatch graded buffer layers, firstly, transition the lattice constant from GaAs to 1.1eV GaInAs, then to 0.9eV GaInAs, and finally to 0.7eV GaInAs, and the lattice constant can be transited to 0.7eV GaInAs only by the three lattice graded buffer layers, so that the growth of high-quality 0.7eV GaInAs subcells is difficult, the bonding interface surface condition is poor, and the bonding yield and the efficiency of the cell are affected.
Disclosure of Invention
The invention aims to solve the problem of providing a germanium-based laminated solar cell and a preparation method thereof, wherein the epitaxial process only involves two lattice graded buffer layers, and part of the preparation process of the six-junction solar cell can be compatible with the most mature Ge-based three-junction solar cell device process applied in the prior art, thereby being beneficial to reducing the preparation difficulty and cost of the cell.
A first aspect of the present invention provides a germanium-based stacked solar cell, including at least:
AlGaInP/AlGaAs/GaAs/Ga based on GaAs substrate reverse growth x In 1-x As four-junction solar cell;
lattice-mismatched Ga based on forward growth of Ge substrate y In 1-y An As/Ge double junction solar cell; wherein:
the AlGaInP/AlGaAs/GaAs/Ga x In 1-x As four-junction solar cell and Ga y In 1-y The As/Ge double-junction solar cell is integrated into AlGaInP/AlGaAs/GaAs/Ga by adopting a bonding method x In 1-x As/Ga y In 1-y An As/Ge six-junction solar cell.
A second object of the present invention is to provide a method for manufacturing a germanium-based stacked solar cell, comprising the steps of:
step 1: reverse growth of AlGaInP/AlGaAs/GaAs/Ga on GaAs substrates using metalorganic chemical vapor deposition techniques x In 1-x As four-junction solar cell epitaxial wafer, its band gap combination is 2.1/1.7/1.42/1.15eV; the growth sequence is a GaAs cap layer, an AlGaInP sub-cell, a first tunneling junction, an AlGaAs sub-cell, a second tunneling junction, a GaAs sub-cell, a third tunneling junction (AlGa) in turn m In 1-m As lattice mismatched graded layer A, ga x In 1-x An As sub-cell, a fourth tunneling junction and a bonding layer A; wherein: (AlGa) m In 1-m The component m value of the As lattice mismatch graded layer A is graded from top to bottom in the range of 1-x, and the corresponding lattice constant is graded from being matched with GaAs to being matched with Ga x In 1-x As matching;
step 2: using MOCVD techniques on Ge substratesSequentially growing GaInP or GaInAs window layers, fifth tunneling junction and (AlGa) in forward direction n In 1-n As lattice graded layer B, ga y In 1-y An As sub-cell and a bonding layer B; and growing a lattice-matched GaInP or GaInAs window layer on the P-type Ge substrate, and diffusing V group atoms in the window layer into the Ge substrate to form the Ge sub-cell. Then sequentially growing a fifth tunneling junction sum (AlGa) n In 1-n An As lattice gradient buffer layer, wherein n value gradually changes from bottom to top in the range of 0.99-y, and the corresponding lattice constant gradually changes from matching with Ge to matching with Ga y In 1-y As matching; finally grow Ga y In 1-y An As sub-cell and a bonding layer B; ga obtained y In 1-y The band gap combination of the As/Ge double junction cell is 0.9/0.67eV; ga of 0.9eV y In 1-y The component y of the As sub-cell may be 0.51;
step 3: alGaInP/AlGaAs/GaAs/Ga grown in step 1 x In 1-x Bonding layer A on surface of As four-junction solar cell and Ga grown in step 2 y In 1-y The top bonding layer B of the As/Ge double-junction battery is bonded;
step 4: etching the GaAs substrate of the three-junction battery prepared in the step 1 by adopting a wet method;
step 5: and preparing an upper metal electrode, a lower metal electrode and an antireflection film of the battery, and completing the battery preparation.
Further: the composition x of the 1.15eV gaxn 1-xAs subcell can be 0.75.
Further: the composition y of the 0.9eV GayIn 1-inas subcell may be 0.51.
Further: the group V atom is P or As.
The invention has the advantages and positive effects that:
the invention is realized by reversely growing AlGaInP/AlGaAs/GaAs/Ga on a GaAs substrate x In 1-x Ga growing forward on As four-junction solar cell and Ge substrate y In 1-y The As/Ge double-junction solar cell is integrated into AlGaInP/AlGaAs/GaAs/Ga in a semiconductor bonding mode x In 1-x As/Ga y In 1-y An As/Ge six-junction solar cell. FirstThe band gap structure combination of the cell is 2.1/1.7/1.42/1.15/0.9/0.67eV, so that the cell can be optimally matched with solar spectrum, and the open-circuit voltage of the multi-junction cell is improved, so that the photoelectric conversion efficiency of the cell is improved. And secondly, the GaAs substrate in the method can be reused after being stripped, and the device preparation process of the six-junction solar cell can be compatible with the Ge-based three-junction solar cell device process which is most mature in application in the prior art, thereby being beneficial to reducing the preparation difficulty and cost of the cell.
Drawings
FIG. 1 is a block diagram of a preferred embodiment of the present invention;
FIG. 2 shows Ga based on Ge substrate forward growth in the present invention y In 1-y An As/Ge double-junction solar cell schematic diagram;
fig. 3 is a schematic diagram of a cell structure after bonding of a six-junction solar cell and delamination of a GaAs substrate according to the present invention.
Detailed Description
The invention will be further described with reference to the drawings and the specific examples.
Please refer to fig. 1 to 3;
the invention provides a germanium-based laminated solar cell, which is formed by reversely growing AlGaInP/AlGaAs/GaAs/Ga based on a GaAs substrate x In 1-x As four-junction solar cell and lattice-mismatched Ga based on forward growth of Ge substrate y In 1-y The As/Ge double-junction solar cell is integrated into AlGaInP/AlGaAs/GaAs/Ga by a bonding method x In 1-x As/Ga y In 1-y An As/Ge six-junction solar cell.
First preferred embodiment: the AlGaInP/AlGaAs/GaAs/Ga x In 1-x As/Ga y In 1-y The preparation method of the As/Ge six-junction solar cell comprises the following steps:
step 1: as shown in FIG. 1, alGaInP/AlGaAs/GaAs/Ga based on reverse growth of GaAs substrate in the present invention x In 1-x As four-junction solar cell schematic diagram. Sequentially growing a GaAs cap layer, an AlGaInP subcell, a first tunneling junction, an AlGaAs subcell, a second tunneling junction, a GaAs subcell, a third tunneling junction and (AlGa) on a GaAs substrate by using an MOCVD technology m In 1-m As lattice mismatched graded layer A, ga x In 1-x The As sub-cell, the fourth tunneling junction and the bonding layer A, an AlGaInP/AlGaAs/GaAs/Ga with a bandgap combination of 2.1/1.7/1.42/1.15eV is obtained x In 1-x As four-junction solar cell epitaxial wafer. Wherein (AlGa) m In 1-m The component m value of the As lattice mismatch graded layer A is graded from top to bottom in the range of 1-0.75, and the corresponding lattice constant is graded from being matched with GaAs to being matched with Ga 0.75 In 0.25 As matches. The bonding layer A can be N-type Ga 0.75 In 0.25 As material or other material with Ga 0.75 In 0.25 As lattice constant is the same.
Step 2: as shown in FIG. 2, ga according to the present invention is grown on the basis of the forward direction of a Ge substrate y In 1-y As/Ge double junction solar cell schematic diagram. And by utilizing the MOCVD technology, firstly growing a lattice-matched GaInP window layer on the P-type Ge substrate, and forming the Ge sub-cell by diffusing P atoms in the window layer into the Ge substrate. Then sequentially growing a fifth tunneling junction sum (AlGa) n In 1-n An As lattice gradient layer B, wherein n is gradually changed from bottom to top in the range of 0.99-0.51, and the corresponding lattice constant is gradually changed from matching with Ge to matching with Ga 0.49 In 0.51 As matches. Finally grow Ga 0.49 In 0.51 As subcells and bonding layer B. Ga obtained 0.49 In 0.51 The bandgap combination of the As/Ge double junction cell was 0.9/0.67eV. The bonding layer B can be N-type Ga 0.49 In 0.51 As or other and Ga 0.49 In 0.51 As lattice constant is the same.
Step 3: alGaInP/AlGaAs/GaAs/Ga grown in step 1 0.75 In 0.25 Bonding layer A (Ga) 0.75 In 0.25 As) and step 2 grown Ga 0.49 In 0.51 Top bonding layer B (Ga) 0.49 In 0.51 As) bond. The bonding interface is Ga 0.75 In 0.25 As/Ga 0.49 In 0.51 As。
Step 4: after bonding, alGaInP/AlGaAs/GaAs/Ga 0.75 In 0.25 The GaAs substrate in the As four-junction solar cell is peeled off.
Step 5: after the GaAs substrate is stripped, the preparation of the upper and lower metal electrodes and the antireflection film of the battery is completed according to the known battery device process.
Through implementation of the steps, the preparation process of the germanium-based laminated solar cell is completed.
Second preferred embodiment: the AlGaInP/AlGaAs/GaAs/Ga x In 1-x As/Ga y In 1-y The preparation method of the As/Ge six-junction solar cell comprises the following steps:
step 1: as shown in FIG. 1, alGaInP/AlGaAs/GaAs/Ga based on reverse growth of GaAs substrate in the present invention x In 1-x As four-junction solar cell schematic diagram. Sequentially growing a GaAs cap layer, an AlGaInP subcell, a first tunneling junction, an AlGaAs subcell, a second tunneling junction, a GaAs subcell, a third tunneling junction and (AlGa) on a GaAs substrate by using an MOCVD technology m In 1-m As lattice mismatched graded layer A, ga x In 1-x The As sub-cell, the fourth tunneling junction and the bonding layer A, an AlGaInP/AlGaAs/GaAs/Ga with a bandgap combination of 2.1/1.7/1.42/1.15eV is obtained x In 1-x As four-junction solar cell epitaxial wafer. Wherein (AlGa) m In 1-m The component m value of the As lattice mismatch graded layer A is graded from top to bottom in the range of 1-0.75, and the corresponding lattice constant is graded from being matched with GaAs to being matched with Ga 0.75 In 0.25 As matches. The bonding layer A can be N-type Ga 0.75 In 0.25 As material or other material with Ga 0.75 In 0.25 As lattice constant is the same.
Step 2: as shown in FIG. 2, ga according to the present invention is grown on the basis of the forward direction of a Ge substrate y In 1-y As/Ge double junction solar cell schematic diagram. And firstly growing a lattice-matched GaInAs window layer on the P-type Ge substrate by utilizing an MOCVD technology, and forming the Ge sub-cell by diffusing As atoms in the window layer into the Ge substrate. Then sequentially growing a fifth tunneling junction sum (AlGa) n In 1-n An As lattice gradient layer B, wherein n is gradually changed from bottom to top in the range of 0.99-0.51, and the corresponding lattice constant is gradually changed from matching with Ge to matching with Ga 0.49 In 0.51 As matches. Finally grow Ga 0.49 In 0.51 As subcells and bonding layer B. Ga obtained 0.49 In 0.51 The bandgap combination of the As/Ge double junction cell was 0.9/0.67eV. The bonding layer B can be N-type Ga 0.49 In 0.51 As or other and Ga 0.49 In 0.51 As lattice constant is the same.
Step 3: alGaInP/AlGaAs/GaAs/Ga grown in step 1 0.75 In 0.25 Bonding layer A (Ga) 0.75 In 0.25 As) and step 2 grown Ga 0.49 In 0.51 Top bonding layer B (Ga) 0.49 In 0.51 As) bond. The bonding interface is Ga 0.75 In 0.25 As/Ga 0.49 In 0.51 As。
Step 4: after bonding, alGaInP/AlGaAs/GaAs/Ga 0.75 In 0.25 The GaAs substrate in the As four-junction solar cell is peeled off.
Step 5: after the GaAs substrate is stripped, the preparation of the upper and lower metal electrodes and the antireflection film of the battery is completed according to the known battery device process.
Through implementation of the steps, the preparation process of the germanium-based laminated solar cell is completed.
The foregoing describes one embodiment of the present invention in detail, but the description is only a preferred embodiment of the present invention and should not be construed as limiting the scope of the invention. All equivalent changes and modifications within the scope of the present invention are intended to be covered by the present invention.
Claims (4)
1. A preparation method of a germanium-based laminated solar cell; the germanium-based laminated solar cell is characterized by comprising:
AlGaInP/AlGaAs/GaAs/Ga based on GaAs substrate reverse growth x In 1-x As four-junction solar cell;
lattice-mismatched Ga based on forward growth of Ge substrate y In 1-y An As/Ge double junction solar cell; wherein:
the AlGaInP/AlGaAs/GaAs/Ga x In 1-x As four-junction solar cell and Ga y In 1-y The As/Ge double-junction solar cell is integrated into AlGaInP/AlGaAs/GaAs/Ga by adopting a bonding method x In 1-x As/Ga y In 1-y An As/Ge six-junction solar cell;
the preparation method comprises the following steps:
step 1: reverse growth of AlGaInP/AlGaAs/GaAs/Ga on GaAs substrates using metalorganic chemical vapor deposition techniques x In 1-x As four-junction solar cell epitaxial wafer, the band gap combination is 2.1/1.7/1.42/1.15eV; the growth sequence is a GaAs cap layer, an AlGaInP sub-cell, a first tunneling junction, an AlGaAs sub-cell, a second tunneling junction, a GaAs sub-cell, a third tunneling junction (AlGa) in turn m In 1-m As lattice mismatched graded layer A, ga x In 1-x An As sub-cell, a fourth tunneling junction and a bonding layer A; wherein: (AlGa) m In 1-m The component m value of the As lattice mismatch graded layer A is graded from top to bottom in 1~x interval, and the corresponding lattice constant is graded from being matched with GaAs to being matched with Ga x In 1-x As matching; the bonding layer A is N-type Ga 0.75 In 0.25 As material or with Ga 0.75 In 0.25 As lattice constant identical material;
step 2: using MOCVD technique to grow GaInP or GaInAs window layer and fifth tunneling junction, (AlGa) on Ge substrate in forward direction n In 1-n As lattice graded layer B, ga y In 1-y An As sub-cell and a bonding layer B; growing a lattice-matched GaInP or GaInAs window layer on a P-type Ge substrate, and diffusing V-group atoms in the window layer into the Ge substrate to form a Ge sub-cell; then sequentially growing a fifth tunneling junction sum (AlGa) n In 1-n An As lattice gradient buffer layer, wherein n value gradually changes from bottom to top in the range of 0.99-y, and the corresponding lattice constant gradually changes from matching with Ge to matching with Ga y In 1-y As matching; finally grow Ga y In 1-y An As sub-cell and a bonding layer B; ga obtained y In 1-y The band gap combination of the As/Ge double junction cell is 0.9/0.67eV; the bonding layer B is N-type Ga 0.49 In 0.51 As or with Ga 0.49 In 0.51 As lattice constantMaterials of the same number;
step 3: alGaInP/AlGaAs/GaAs/Ga grown in step 1 x In 1-x Bonding layer A on surface of As four-junction solar cell and Ga grown in step 2 y In 1-y The top bonding layer B of the As/Ge double-junction battery is bonded;
step 4: etching the GaAs substrate of the three-junction battery prepared in the step 1 by adopting a wet method;
step 5: and preparing an upper metal electrode, a lower metal electrode and an antireflection film of the battery, and completing the battery preparation.
2. The method for manufacturing a germanium-based stacked solar cell according to claim 1, wherein: ga of 1.15eV x In 1-x The composition x of the As subcell was 0.75.
3. The method for manufacturing a germanium-based stacked solar cell according to claim 1, wherein: ga of 0.9eV y In 1-y The component y of the As subcell was 0.51.
4. The method for manufacturing a germanium-based stacked solar cell according to claim 1, wherein: the group V atom is P or As.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911355509.7A CN111129196B (en) | 2019-12-25 | 2019-12-25 | Germanium-based laminated solar cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911355509.7A CN111129196B (en) | 2019-12-25 | 2019-12-25 | Germanium-based laminated solar cell and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111129196A CN111129196A (en) | 2020-05-08 |
| CN111129196B true CN111129196B (en) | 2023-07-18 |
Family
ID=70503611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911355509.7A Active CN111129196B (en) | 2019-12-25 | 2019-12-25 | Germanium-based laminated solar cell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111129196B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007189025A (en) * | 2006-01-12 | 2007-07-26 | Sharp Corp | Multi-junction solar cell |
| EP2610924A1 (en) * | 2011-12-27 | 2013-07-03 | Emcore Solar Power, Inc. | Inverted metamorphic multijunction solar cell with two metamorphic layers and homojunction top cell |
| CN203536449U (en) * | 2013-10-24 | 2014-04-09 | 广东瑞德兴阳光伏科技有限公司 | Multi-junction light-gathering gallium arsenide solar cell |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI285436B (en) * | 2005-12-30 | 2007-08-11 | Ind Tech Res Inst | Solar cell with superlattice structure and fabricating method thereof |
| CN102832274B (en) * | 2012-09-05 | 2015-01-07 | 天津三安光电有限公司 | Flip-chip solar cell and manufacture method thereof |
| CN103219414B (en) * | 2013-04-27 | 2016-12-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaInP/GaAs/InGaAsP/InGaAs tetra-ties the manufacture method of cascade solar cell |
| CN105355680B (en) * | 2015-11-19 | 2017-03-22 | 中山德华芯片技术有限公司 | Crystal lattice matching six-junction solar energy cell |
| CN106252451B (en) * | 2016-09-27 | 2018-08-28 | 中国电子科技集团公司第十八研究所 | Five knot stacked solar cell, cascade solar cells of one kind and preparation method thereof |
| CN109148621B (en) * | 2018-08-15 | 2020-04-07 | 中山德华芯片技术有限公司 | Double-sided growth efficient six-junction solar cell and preparation method thereof |
-
2019
- 2019-12-25 CN CN201911355509.7A patent/CN111129196B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007189025A (en) * | 2006-01-12 | 2007-07-26 | Sharp Corp | Multi-junction solar cell |
| EP2610924A1 (en) * | 2011-12-27 | 2013-07-03 | Emcore Solar Power, Inc. | Inverted metamorphic multijunction solar cell with two metamorphic layers and homojunction top cell |
| CN203536449U (en) * | 2013-10-24 | 2014-04-09 | 广东瑞德兴阳光伏科技有限公司 | Multi-junction light-gathering gallium arsenide solar cell |
Non-Patent Citations (2)
| Title |
|---|
| GaAs基高效多结太阳电池研究进展;李国强;高芳亮;;半导体光电(第05期);全文 * |
| Understanding the influence of shunts in the I–V curves and electroluminescence of multijunction solar cells;I. Lombardero et al;《Solar Energy Materials and Solar Cells 》;第204卷(第110236期);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111129196A (en) | 2020-05-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9437769B2 (en) | Four-junction quaternary compound solar cell and method thereof | |
| CN101859813B (en) | Method for manufacturing quadri-junction GaInP/GaAs/InGaAs/Ge solar cells | |
| CN101950774A (en) | Manufacturing method of GaInP/GaAs/InGaAsP/InGaAs four-junction solar battery | |
| WO2012174952A1 (en) | High-concentration multijunction solar cell and method for fabricating same | |
| CN104300015A (en) | AlGaAs/GaInAs/Ge continuous spectrum solar battery | |
| CN102832285A (en) | Three-junction solar battery and preparation method thereof | |
| CN103219414B (en) | GaInP/GaAs/InGaAsP/InGaAs tetra-ties the manufacture method of cascade solar cell | |
| CN102969387A (en) | GaInP/GaAs/InGaAs triple-junction solar cell epitaxial structure | |
| CN106252451A (en) | A kind of five knot stacked solar cell, cascade solar cells and preparation method thereof | |
| CN103077983A (en) | Multi-junction solar battery and preparation method thereof | |
| CN206282866U (en) | A kind of five knot stacked solar cell, cascade solar cells | |
| CN105576068A (en) | Double-face-growing InP five-junction solar battery | |
| CN109326674B (en) | Five-junction solar cell containing multiple double heterojunction sub-cells and preparation method thereof | |
| CN102790117A (en) | GaInP/GaAs/InGaNAs/Ge four-junction solar cell and preparation method thereof | |
| CN110911510B (en) | Silicon-based nitride five-junction solar cell containing superlattice structure | |
| CN109148621B (en) | Double-sided growth efficient six-junction solar cell and preparation method thereof | |
| CN110931593A (en) | Lattice-matched silicon-based arsenic-free compound four-junction solar cell | |
| Vauche et al. | Development of III-V on Si multijunction photovoltaics by wafer bonding | |
| CN104157725A (en) | Method for manufacturing GaInP/GaAs/InGaAsP/InGaAs four-junction cascading solar cell | |
| CN103000740A (en) | GaAs/GaInP double knot solar battery and manufacturing method thereof | |
| CN114171615B (en) | Silicon-based multi-junction solar cell and gradual change buffer layer thereof | |
| CN110556445A (en) | laminated parallel solar cell | |
| CN210692559U (en) | Inverted-growth double-heterojunction four-junction flexible solar cell | |
| CN111129196B (en) | Germanium-based laminated solar cell and preparation method thereof | |
| CN206584943U (en) | A kind of matching four-junction solar cell of positive growth |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |