CN111128803A - Etching apparatus - Google Patents
Etching apparatus Download PDFInfo
- Publication number
- CN111128803A CN111128803A CN201911354106.0A CN201911354106A CN111128803A CN 111128803 A CN111128803 A CN 111128803A CN 201911354106 A CN201911354106 A CN 201911354106A CN 111128803 A CN111128803 A CN 111128803A
- Authority
- CN
- China
- Prior art keywords
- air
- air guide
- plate
- holes
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 105
- 238000005086 pumping Methods 0.000 claims abstract description 59
- 238000000605 extraction Methods 0.000 claims abstract description 38
- 230000000694 effects Effects 0.000 abstract description 8
- 239000007789 gas Substances 0.000 description 11
- 230000009286 beneficial effect Effects 0.000 description 7
- 238000005192 partition Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The application provides an etching device, including: an etch chamber and a pumping system. The etching chamber includes an upper electrode, a lower electrode, and a wind guide member disposed around the lower electrode. The air pumping system comprises at least one air pumping hole, and the air pumping hole is positioned on one side of the air deflector, which is far away from the etching chamber. The air guide component comprises at least one air guide plate, and the air guide plate comprises a plurality of air guide holes. The air ratio of the air guide holes close to the air extraction opening in the air guide plate is smaller than that of the air guide holes far away from the air extraction opening in the air guide plate. According to the air guide device, the air occupation ratio of the air guide hole close to the air suction opening in the air guide plate is smaller than the air occupation ratio of the air guide hole far away from the air suction opening in the air guide plate, so that the phenomenon that gas in the cavity generates a waterfall effect in the area close to the air suction opening is effectively avoided, and the uniformity of products to be etched in the etching device is improved.
Description
Technical Field
The application relates to the field of semiconductor processing, in particular to an etching device.
Background
With the development of society, the demand of people for display devices is increasing, and the output of display panels is promoted to be increased continuously. The etching process is an essential process in the manufacturing process of the display panel, and an etching apparatus is required.
In the existing etching device, due to the waterfall effect of the gas in the chamber in the pumping hole area, the etching rate of the part of the product to be etched, which is closer to the pumping hole area, is faster, so that the etching of the product to be etched is not uniform, and the display quality of the product is affected.
Therefore, a new etching apparatus is needed to solve the above technical problems.
Disclosure of Invention
The application provides an etching device, which is used for solving the problem that the etching of a product to be etched is not uniform by the existing etching device.
In order to solve the technical problem, the technical scheme provided by the application is as follows:
the application provides an etching device, including: an etching chamber and a pumping system;
the etching chamber comprises an upper electrode, a lower electrode and a wind guide component arranged around the lower electrode;
the air pumping system comprises at least one air pumping hole, and the air pumping hole is positioned on one side of the air deflector, which is far away from the etching chamber;
the air guide component comprises at least one air guide plate, and the air guide plate comprises a plurality of air guide holes;
the air ratio of the air guide holes close to the air extraction opening in the air guide plate is smaller than that of the air guide holes far away from the air extraction opening in the air guide plate.
In the etching apparatus provided by the present application, the air guide member includes a first air guide plate located on one side of the lower electrode;
the first air deflector comprises a first sub-deflector, and a plurality of first air guide branch holes are formed in the first sub-deflector;
the air pumping system comprises a first air pumping port, and the first air pumping port at least comprises a first air pumping branch port;
the first division plate is positioned on the first air exhaust branch port, and the orthographic projection of the first air exhaust branch port on the first division plate is positioned in the first area of the first division plate;
the air ratio of the first air guide branch hole is gradually increased in the direction from the first area to the first edge or the second edge of the first sub-plate.
In the etching apparatus provided by the present application, a plurality of first wind guide sub-regions are provided in a region from the first region to the first edge, and a plurality of second wind guide sub-regions are provided in a region from the first region to the second edge;
in any one of the first air guide subareas or any one of the second air guide subareas, the absolute value of the difference between the air ratio of two adjacent first air guide branch holes is less than or equal to 5%.
In the etching apparatus provided by the present application, the first pumping port further includes a second pumping branch port arranged in parallel with the first pumping branch port;
the first sub-plate is positioned on the second air exhaust branch port, and the orthographic projection of the second air exhaust branch port on the first sub-plate is positioned in the second area of the first sub-plate;
the air ratio of the first air guide branch hole is gradually reduced in the direction from the first edge to the first area of the first sub plate;
in the direction from the first area to the second area, the air occupation ratio of the first air guide branch hole is increased firstly and then reduced;
in the direction from the second area to the second edge of the first sub plate, the air ratio of the first air guide branch hole gradually increases.
In the etching apparatus provided by the application, the first air deflector further comprises a second plate, and the second plate is located between the first extraction opening and the first plate;
the second sub-plate comprises a plurality of second air guide branch holes, the second air guide branch holes are uniformly distributed on the second sub-plate, and the absolute value of the difference between the air ratio of any two second air guide branch holes is less than or equal to 5%; or,
the air occupation ratio of the second air guide holes in the second division plate close to the air extraction opening is smaller than that of the air guide holes in the second division plate far away from the air extraction opening.
In the etching apparatus provided by the present application, the air guide member further includes a third air guide plate located on one side of the lower electrode and disposed opposite to the first air guide plate, and a second air guide plate and a fourth air guide plate connecting the first air guide plate and the third air guide plate, where the second air guide plate and the fourth air guide plate are disposed opposite to each other;
the air extraction system further comprises a second air extraction opening corresponding to the third air deflector, and the first air extraction opening and the second air extraction opening are symmetrically arranged with the center line of the lower electrode.
In the etching apparatus provided by the application, a plurality of second air guide holes are formed in the second air guide plate;
the air ratio of the second air guide hole on the second air guide plate close to the first air exhaust opening or the second air exhaust opening is smaller than the air ratio of the second air guide hole on the second air guide plate far away from the first air exhaust opening or the second air exhaust opening.
In the etching apparatus provided by the present application, a plurality of fourth air guiding holes are formed in the fourth air guiding plate;
the air occupation ratio of the fourth air guide hole on the fourth air guide plate close to the first air extraction opening or the second air extraction opening is smaller than the air occupation ratio of the fourth air guide hole on the fourth air guide plate far away from the first air extraction opening or the second air extraction opening.
In the etching device provided by the application, the air ratio of the air guide holes on any air guide plate on the corresponding air guide plate is greater than or equal to 50% and less than 100%.
In the etching device provided by the application, the diameter of the air guide hole is 1-10 mm.
Has the advantages that: according to the air guide device, the air occupation ratio of the air guide hole close to the air suction opening in the air guide plate is smaller than the air occupation ratio of the air guide hole far away from the air suction opening in the air guide plate, so that the phenomenon that gas in the cavity generates a waterfall effect in the area close to the air suction opening is effectively avoided, and the uniformity of products to be etched in the etching device is improved.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
FIG. 1 is a schematic view of an etching apparatus according to the present application.
FIG. 2 is a first schematic view of a first sub-plate of the etching apparatus of the present application.
FIG. 3 is a second schematic view of the first sub-plate of the etching apparatus of the present application.
FIG. 4 is a third schematic view of the first plate of the etching apparatus of the present application.
FIG. 5 is a fourth schematic view of the first plate of the etching apparatus of the present application.
FIG. 6 is a first schematic view of a second plate of the etching apparatus of the present application.
FIG. 7 is a first schematic view of an air deflector of the etching apparatus of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact of the first and second features, or may comprise contact of the first and second features not directly but through another feature in between. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
In the existing etching device, due to the waterfall effect of the gas in the etching chamber in the pumping hole area, the etching of the product to be etched is not uniform, and the problem of influencing the display quality of the product exists. Based on this, the present application proposes an etching apparatus.
Referring to fig. 1 to 7, the etching apparatus 100 includes an etching chamber 101 and a pumping system 102.
The etching chamber 101 includes an upper electrode 103, a lower electrode 104, and a wind guide member 105 disposed around the lower electrode 104.
The pumping system 102 comprises at least one pumping port 106, and the pumping port 106 is located on a side of the air deflector away from the etching chamber 101.
The wind-guiding member 105 includes at least one wind-guiding plate 124, and the wind-guiding plate includes a plurality of wind-guiding holes 123.
The air ratio of the air guide holes close to the air extraction opening 106 in the air guide plate 124 is smaller than the air ratio of the air guide holes far away from the air extraction opening 106 in the air guide plate 124.
In this embodiment, the reaction gas forms plasma through the upper electrode 103 and is introduced into the etching chamber 101 to etch the product to be etched.
In this embodiment, the etching products are pumped out by the pumping system 102, which is beneficial to faster etching.
In this embodiment, the pumping system 102 further comprises a pumping pump, such as a molecular pump, connected to the pumping port 106, for accelerating the pumping of the etching products and the etching of the products to be etched.
By setting the air ratio of the air guide holes close to the air extraction opening 106 in the air guide plate 124 to be smaller than the air ratio of the air guide holes far away from the air extraction opening 106 in the air guide plate 124, the gas in the area close to the air extraction opening 106 in the etching chamber 101 is effectively prevented from generating a waterfall effect, and the uniformity of the product to be etched by the etching device 100 is improved.
The technical solution of the present application will now be described with reference to specific embodiments.
Example one
Referring to fig. 2, the wind guiding member 105 includes a first wind guiding plate 107 located at one side of the lower electrode 104.
The first air guiding plate 107 includes a first sub-plate 108, and a plurality of first air guiding branch holes 115 are disposed on the first sub-plate 108.
The air pumping system 102 includes a first pumping port, and the first pumping port includes at least a first pumping branch port.
The first splitter plate 108 is located on the first bleed port, and an orthographic projection of the first bleed port on the first splitter plate 108 is located in a first region 109 of the first splitter plate 108.
In a direction from the first area 109 to the first edge 110 or the second edge 111 of the first splitter plate 108, the air ratio of the first air guiding branch holes 115 gradually increases.
In this embodiment, the distribution rule of the air ratio of the first air guiding branch holes 115 in the direction from the first area 109 to the first edge 110 or the second edge 111 of the first splitter plate 108 may be determined by an edge etching rate variation curve of a product to be etched on the lower electrode 104 on a side close to the first splitter plate 108.
The etching uniformity of the product to be etched on the lower electrode 104 can be adjusted to be less than 10% by the change of the space ratio of the first wind guide branch holes 115 in the direction from the first region 109 to the first edge 110 or the second edge 111 of the first splitter 108.
In this embodiment, the space ratio of the first air guiding branch hole 115 is gradually increased in the direction from the first area 109 to the first edge 110 or the second edge 111 of the first splitter 108, and the amount of the increase can be adjusted at any time according to the edge etching rate variation curve of the product to be etched on the lower electrode 104 near the first splitter 108, which is beneficial to improving the uniformity of the product to be etched by the etching apparatus 100.
Example two
Referring to fig. 3, the present embodiment is the same as or similar to the first embodiment, except that:
a plurality of first air guide sub-regions 112 are arranged in the region from the first region 109 to the first edge 110, and a plurality of second air guide sub-regions 113 are arranged in the region from the first region 109 to the second edge 111.
In any one of the first wind guide sub-areas 112 or any one of the second wind guide sub-areas 113, an absolute value of a difference between space ratios of two adjacent first wind guide branch holes 115 is less than or equal to 5%.
In this embodiment, the number of the first wind guide sub-regions 112 may be 2 to 6, and preferably 3 to 5.
The number of the second wind guide sub-areas 113 can be 2-6, preferably 3-5.
When the number of the first wind guide sub-area 112 or the second wind guide sub-area 113 is less than 2, the number of the air ratio of the first wind guide branch holes 115 is too small, and the etching uniformity of the product to be etched cannot be adjusted; when the number of the first wind guide sub-area 112 or the second wind guide sub-area 113 is more than 6, the number of the air ratio of the first wind guide branch holes 115 is set too much, and the purpose of simplifying the design of the air ratio of the first wind guide branch holes 115 of the first sub-plate 108 cannot be achieved.
When the number of the first wind guide sub-area 112 or the second wind guide sub-area 113 is 3-5, the number of the air ratio of the first wind guide branch holes 115 is set to simplify the design of the air ratio of the first wind guide branch holes 115 of the first sub-plate 108 and realize the etching uniformity of the product to be etched.
When the number of the first air guide sub-area 112 or the second air guide sub-area 113 is 3, the air ratio of the first air guide branch holes 115 in the area from the first area 109 to the first edge 110 or the area from the first area 109 to the second edge 111 may be set to 50% to 65%, preferably 60%; 80% -90%, preferably 85%; 90 to 100%, preferably 95%.
In this embodiment, the first sub-plate 108 is divided into the first wind guide sub-areas 112 and the second wind guide sub-areas 113, so that the design of the air ratio of the first wind guide branch holes 115 in the region from the first area 109 to the first edge 110 and the region from the first area 109 to the second edge 111 is simplified, and the uniformity of the etching device 100 for etching the product to be etched is realized.
EXAMPLE III
Referring to fig. 4 and 5, the present embodiment is the same as or similar to the first embodiment and the second embodiment, except that:
the first air exhaust port further comprises a second air exhaust branch port which is arranged in parallel with the first air exhaust branch port.
The first plate 108 is located on the second bleed branch, and an orthographic projection of the second bleed branch on the first plate 108 is located in the second region 114 of the first plate 108.
In a direction from the first edge 110 to the first area 109 of the first splitter plate 108, the air ratio of the first air guide branch holes 115 gradually decreases.
In the direction from the first area 109 to the second area 114, the air ratio of the first air guide branch holes 115 increases first and then decreases.
In a direction from the second area 114 to the second edge 111 of the first sub plate 108, the air ratio of the first air guiding branch holes 115 gradually increases.
In this embodiment, the arrangement of the second pumping branch port accelerates the speed of the pumping system 102 for pumping the etching product out of the etching chamber 101, and accelerates the etching speed of the product to be etched; meanwhile, by setting the air ratio of the air guide holes close to the air extraction opening 106 in the air guide plate to be smaller than the air ratio of the air guide holes far away from the air extraction opening 106 in the air guide plate, the gas in the area close to the air extraction opening 106 in the etching chamber 101 is effectively prevented from generating a waterfall effect, and the uniformity of the product to be etched by the etching device 100 is improved.
Example four
Referring to fig. 6, the embodiment is the same as or similar to the above embodiments, except that:
the first air deflector 107 further includes a second plate 109, and the second plate 109 is located between the first air pumping hole and the first plate 108.
In this embodiment, the second plate section 109 includes a plurality of second air guiding branch holes 116, the second air guiding branch holes 116 may be uniformly distributed on the second plate section 109, and an absolute value of a difference between air ratios of any two of the second air guiding branch holes 116 is less than or equal to 5%.
In this embodiment, the air ratio of the second air guiding hole close to the air extracting opening 106 in the second plate partition 109 is smaller than the air ratio of the air guiding hole far from the air extracting opening 106 in the second plate partition 109.
In this embodiment, the second partition plate 109 is disposed between the first pumping hole and the first partition plate 108, so as to be beneficial to buffering the suction force of the pumping system 102 on the gas in the etching chamber 101, and the second partition plate 109 and the first partition plate 108 are cooperatively disposed, so as to be beneficial to eliminating the waterfall effect generated by the gas in the etching chamber 101 near the pumping hole 106, and improve the uniformity of the product to be etched by the etching apparatus 100.
EXAMPLE five
Referring to fig. 7, the present embodiment is the same as or similar to the above embodiments, except that:
the air guiding member 105 further includes a third air guiding plate 117 located on one side of the lower electrode 104 and disposed opposite to the first air guiding plate 107, and a second air guiding plate 120 and a fourth air guiding plate 121 connecting the first air guiding plate 107 and the third air guiding plate 117, wherein the second air guiding plate 120 and the fourth air guiding plate 121 are disposed opposite to each other.
The pumping system 102 further includes a second pumping hole corresponding to the third air guiding plate 117, and the first pumping hole and the second pumping hole are symmetrically disposed about a center line of the lower electrode 104.
In this embodiment, an air ratio of the second air guiding hole 119 on the second air guiding plate 120 close to the first air pumping hole or the second air pumping hole may be smaller than an air ratio of the second air guiding hole 119 on the second air guiding plate 120 far from the first air pumping hole or the second air pumping hole.
In this embodiment, the second air guiding holes 119 on the second air guiding plate 120 may be uniformly distributed, and an absolute value of a difference between the air ratio of any two second air guiding holes 119 is less than or equal to 5%.
In this embodiment, an air ratio of the fourth air guiding hole 122 on the fourth air guiding plate 121 close to the first air exhaust opening or the second air exhaust opening may be smaller than an air ratio of the fourth air guiding hole 122 on the fourth air guiding plate 121 far from the first air exhaust opening or the second air exhaust opening.
In this embodiment, the fourth air guiding holes 122 on the fourth air guiding plate 121 may be uniformly distributed, and an absolute value of a difference between the air ratio of any two of the fourth air guiding holes 122 is less than or equal to 5%.
In this embodiment, when the second air guiding holes 119 are uniformly distributed on the second air guiding plate 120 and the fourth air guiding holes 122 are uniformly distributed on the fourth air guiding plate 121, the air ratio between the second air guiding holes 119 and the fourth air guiding holes 122 is preferably 85% to 95%.
When the air ratio of the second air guiding hole 119 and the fourth air guiding hole 122 is less than 85%, the air ratio of the second air guiding hole 119 and the fourth air guiding hole 122 is too small, which is not beneficial to timely pumping out the gas in the etching chamber 101, and can reduce the etching speed of the product to be etched; when the air ratio of the second air guiding hole 119 and the fourth air guiding hole 122 is greater than 95%, the air ratio of the second air guiding hole 119 and the fourth air guiding hole 122 is too large, which is not favorable for the plasma gas for etching the sample to be etched to stay in the etching chamber 101, and also reduces the etching speed of the product to be etched.
In the embodiment, the third air guiding plate 117 arranged opposite to the first air guiding plate 107, the second air guiding plate 120 and the fourth air guiding plate 121 connecting the first air guiding plate 107 and the third air guiding plate 117 are arranged, and the second air guiding plate 120 and the fourth air guiding plate 121 are arranged opposite to each other, so that the plasma gas for etching the product to be etched in the etching chamber 101 is distributed uniformly in the etching chamber 101, and the uniformity of the product to be etched by the etching apparatus 100 is improved.
In the above examples, the air ratio of the air guiding hole 123 on any air guiding plate on the corresponding air guiding plate may be greater than or equal to 50% and less than 100%; preferably more than 60% and less than 100%.
When the air ratio of the air guide hole is less than 50%, the air ratio of the air guide hole 123 is too small, which is not favorable for the etching product to be extracted, and reduces the etching speed of the etching device 100 to the product to be etched.
In the above examples, the diameter of the air guiding hole 123 may be 1 to 10 mm, and preferably 3 to 8 mm.
When the diameter of the air guide hole 123 is smaller than 1 mm, the diameter of the air guide hole 123 is too small, which is not beneficial to timely drawing out an etching product, and can reduce the etching speed of the etching device 100 on a product to be etched; when the diameter of the air guiding hole 123 is greater than 10 mm, the diameter of the air guiding hole 123 is too large, which is not beneficial to adjusting the air-to-space ratio of the air guiding hole 123 on the air deflector, and may cause the uniformity of the etching device 100 on the product to be etched to be reduced. When the diameter of the air guide hole 123 is 3-8 mm, the etching speed of the etching device 100 to be etched can be guaranteed, the adjustment of the air ratio of the air guide hole 123 on the air deflector cannot be influenced, and the uniformity of the etching device 100 to be etched can be improved.
The application provides an etching device, including: an etch chamber and a pumping system. The etching chamber includes an upper electrode, a lower electrode, and a wind guide member disposed around the lower electrode. The air pumping system comprises at least one air pumping hole, and the air pumping hole is positioned on one side of the air deflector, which is far away from the etching chamber. The air guide component comprises at least one air guide plate, and the air guide plate comprises a plurality of air guide holes. The air ratio of the air guide holes close to the air extraction opening in the air guide plate is smaller than that of the air guide holes far away from the air extraction opening in the air guide plate. According to the air guide device, the air occupation ratio of the air guide hole close to the air suction opening in the air guide plate is smaller than the air occupation ratio of the air guide hole far away from the air suction opening in the air guide plate, so that the phenomenon that gas in the cavity generates a waterfall effect in the area close to the air suction opening is effectively avoided, and the uniformity of products to be etched in the etching device is improved.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The etching apparatus provided in the embodiments of the present application is described in detail above, and the principles and embodiments of the present application are described herein by applying specific examples, and the description of the above embodiments is only used to help understanding the technical solutions and core ideas of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.
Claims (10)
1. An etching apparatus, comprising: an etching chamber and a pumping system;
the etching chamber comprises an upper electrode, a lower electrode and a wind guide component arranged around the lower electrode;
the air pumping system comprises at least one air pumping hole, and the air pumping hole is positioned on one side of the air deflector, which is far away from the etching chamber;
the air guide component comprises at least one air guide plate, and the air guide plate comprises a plurality of air guide holes;
the air ratio of the air guide holes close to the air extraction opening in the air guide plate is smaller than that of the air guide holes far away from the air extraction opening in the air guide plate.
2. The etching apparatus according to claim 1,
the air guide component comprises a first air guide plate positioned on one side of the lower electrode;
the first air deflector comprises a first sub-deflector, and a plurality of first air guide branch holes are formed in the first sub-deflector;
the air pumping system comprises a first air pumping port, and the first air pumping port at least comprises a first air pumping branch port;
the first division plate is positioned on the first air exhaust branch port, and the orthographic projection of the first air exhaust branch port on the first division plate is positioned in the first area of the first division plate;
the air ratio of the first air guide branch hole is gradually increased in the direction from the first area to the first edge or the second edge of the first sub-plate.
3. The etching apparatus according to claim 2,
a plurality of first air guide sub-areas are arranged in the area from the first area to the first edge, and a plurality of second air guide sub-areas are arranged in the area from the first area to the second edge;
in any one of the first air guide subareas or any one of the second air guide subareas, the absolute value of the difference between the air ratio of two adjacent first air guide branch holes is less than or equal to 5%.
4. The etching apparatus according to claim 2,
the first air exhaust port also comprises a second air exhaust branch port which is arranged in parallel with the first air exhaust branch port;
the first sub-plate is positioned on the second air exhaust branch port, and the orthographic projection of the second air exhaust branch port on the first sub-plate is positioned in the second area of the first sub-plate;
the air ratio of the first air guide branch hole is gradually reduced in the direction from the first edge to the first area of the first sub plate;
in the direction from the first area to the second area, the air occupation ratio of the first air guide branch hole is increased firstly and then reduced;
in the direction from the second area to the second edge of the first sub plate, the air ratio of the first air guide branch hole gradually increases.
5. The etching apparatus according to claim 2,
the first air deflector further comprises a second division plate, and the second division plate is positioned between the first air extraction opening and the first division plate;
the second sub-plate comprises a plurality of second air guide branch holes, the second air guide branch holes are uniformly distributed on the second sub-plate, and the absolute value of the difference between the air ratio of any two second air guide branch holes is less than or equal to 5%; or,
the air occupation ratio of the second air guide holes in the second division plate close to the air extraction opening is smaller than that of the air guide holes in the second division plate far away from the air extraction opening.
6. The etching apparatus according to claim 1,
the air guide component also comprises a third air guide plate, a second air guide plate and a fourth air guide plate, wherein the third air guide plate is positioned on one side of the lower electrode and is arranged opposite to the first air guide plate;
the air extraction system further comprises a second air extraction opening corresponding to the third air deflector, and the first air extraction opening and the second air extraction opening are symmetrically arranged with the center line of the lower electrode.
7. The etching apparatus according to claim 6, wherein the second air guiding plate is provided with a plurality of second air guiding holes;
the air ratio of the second air guide hole on the second air guide plate close to the first air exhaust opening or the second air exhaust opening is smaller than the air ratio of the second air guide hole on the second air guide plate far away from the first air exhaust opening or the second air exhaust opening.
8. The etching apparatus according to claim 6, wherein a plurality of fourth wind guide holes are formed in the fourth wind guide plate;
the air occupation ratio of the fourth air guide hole on the fourth air guide plate close to the first air extraction opening or the second air extraction opening is smaller than the air occupation ratio of the fourth air guide hole on the fourth air guide plate far away from the first air extraction opening or the second air extraction opening.
9. The etching apparatus of claim 1, wherein the air ratio of the air guiding holes of any air guiding plate on the corresponding air guiding plate is greater than or equal to 50% and less than 100%.
10. The etching apparatus according to claim 1, wherein the diameter of the air guide hole is 1 to 10 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911354106.0A CN111128803A (en) | 2019-12-25 | 2019-12-25 | Etching apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911354106.0A CN111128803A (en) | 2019-12-25 | 2019-12-25 | Etching apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111128803A true CN111128803A (en) | 2020-05-08 |
Family
ID=70502874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911354106.0A Pending CN111128803A (en) | 2019-12-25 | 2019-12-25 | Etching apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111128803A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0729894A (en) * | 1993-07-14 | 1995-01-31 | Nissin Electric Co Ltd | Porous gas-introducing mechanism |
| KR20060045270A (en) * | 2004-11-12 | 2006-05-17 | 비오이 하이디스 테크놀로지 주식회사 | Dry etching chamber |
| CN101207001A (en) * | 2006-12-22 | 2008-06-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Exhaust device and reaction chamber containing the same |
| US20140273494A1 (en) * | 2013-03-12 | 2014-09-18 | Kabushiki Kaisha Toshiba | Parallel plate dry etching apparatus and method for manufacturing semiconductor device using same |
-
2019
- 2019-12-25 CN CN201911354106.0A patent/CN111128803A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0729894A (en) * | 1993-07-14 | 1995-01-31 | Nissin Electric Co Ltd | Porous gas-introducing mechanism |
| KR20060045270A (en) * | 2004-11-12 | 2006-05-17 | 비오이 하이디스 테크놀로지 주식회사 | Dry etching chamber |
| CN101207001A (en) * | 2006-12-22 | 2008-06-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Exhaust device and reaction chamber containing the same |
| US20140273494A1 (en) * | 2013-03-12 | 2014-09-18 | Kabushiki Kaisha Toshiba | Parallel plate dry etching apparatus and method for manufacturing semiconductor device using same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102760633A (en) | Plasma processing apparatus and plasma processing method | |
| US20080093341A1 (en) | RF Plasma Reactor Having a Distribution Chamber with at Least One Grid | |
| CN110416048B (en) | Reaction chamber and semiconductor processing equipment | |
| KR101684114B1 (en) | Method for activation of fuel cell | |
| JP2012114096A (en) | Ion transfer device and ion transfer method | |
| JP5594820B2 (en) | Uniform atmospheric pressure plasma generator | |
| US10770279B2 (en) | Ion transfer apparatus | |
| CN103177925B (en) | A kind of adjustable confinement ring for plasma processing apparatus | |
| US10020179B2 (en) | Focusing ion guiding apparatus and mass spectrographic analysis apparatus | |
| CN105405732A (en) | Linear ion source used for ion beam etching machine | |
| CN111128803A (en) | Etching apparatus | |
| US20190043696A1 (en) | Flow guide plate, lower electrode assembly for dry etching apparatus, and dry etching apparatus | |
| US11127578B2 (en) | Ion guiding device and related method | |
| CN103151235B (en) | A kind of device improving etching homogeneity | |
| WO2015181564A1 (en) | Improvements in and relating to mass spectrometry | |
| KR102105474B1 (en) | Flow Frame for Redox Flow Battery and Redox Flow Battery Comprising the Same | |
| US20090101812A1 (en) | Interface between differential mobility analyzer and mass spectrometer | |
| JPS6143427A (en) | Sputter-etching method | |
| US5292394A (en) | Apparatus for large-area ionic etching | |
| CN101764021A (en) | Ion pipe and ion beam extraction method | |
| KR102075157B1 (en) | Ion beam source | |
| CN205556775U (en) | Evaporation plating equipment | |
| CN114582698B (en) | Low-temperature plasma etching device and method for large-curvature non-planar device | |
| CN212182267U (en) | Plasma processing apparatus and etching apparatus | |
| CN108726895A (en) | A kind of linear plasma pipette tips |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200508 |
|
| RJ01 | Rejection of invention patent application after publication |