CN111108612B - Display substrate, preparation method and related transfer method thereof - Google Patents
Display substrate, preparation method and related transfer method thereof Download PDFInfo
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- CN111108612B CN111108612B CN201980003337.9A CN201980003337A CN111108612B CN 111108612 B CN111108612 B CN 111108612B CN 201980003337 A CN201980003337 A CN 201980003337A CN 111108612 B CN111108612 B CN 111108612B
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- 239000000758 substrate Substances 0.000 title claims abstract description 164
- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 262
- 238000005096 rolling process Methods 0.000 claims abstract description 17
- 238000002161 passivation Methods 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 description 6
- 239000003574 free electron Substances 0.000 description 4
- 238000007664 blowing Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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Abstract
The invention discloses a display substrate, a preparation method and a related transfer method thereof.A loading groove matched with the shape of a spherical semiconductor chip is arranged on the substrate, and then a plurality of spherical semiconductor chips are rolled into the loading groove in a rolling way; when the spherical semiconductor chip does not fall into the loading groove, the substrate is inclined or vibrated to ensure that the spherical semiconductor chip to be transferred falls into the loading groove, then the redundant part of the spherical semiconductor chip exposed out of the substrate is removed, and finally the first electrode, the second electrode and the passivation layer are arranged on the cross section of the spherical semiconductor chip and are respectively connected with the substrate, and finally the display substrate is prepared.
Description
Technical Field
The invention relates to the technical field of semiconductor display device manufacturing, in particular to a display substrate, a preparation method and a related transfer method thereof.
Background
With the continuous development of display technologies, Micro-LED technologies, namely LED scaling and matrixing technologies, are a new generation of display technologies, which refer to a high-density Micro-sized LED array integrated on a chip, for example, each pixel of an LED display screen can be addressed and independently driven to be lit, and can be regarded as a scaled version of an outdoor LED display screen, and the distance between pixels is reduced from millimeter level to micron level; the Micro-LED packaging method has the advantages that due to the requirements of extremely high efficiency, 99.9999% yield and transfer precision within plus or minus 0.5 mu m in the packaging process, the size of the Micro-LED components is basically smaller than 50 mu m, and the number of the Micro-LED components is tens of thousands to millions, so that a core technical problem which needs to be overcome in the Micro-LED industrialization process is the massive transfer (MassTransfer) technology of the Micro-LED components. For modern ultra-precision processing technology, transferring tens of thousands to hundreds of thousands of Micro-LEDs from a wafer to a substrate is a huge challenge, and processing efficiency, yield and transferring precision cannot be guaranteed.
The structures of the existing LED chips are basically irregular shapes, and the structures of the LED chips cannot be accurately positioned when being transferred to a substrate when being transferred in a large quantity, so that the transferring precision is too low.
Accordingly, the prior art is yet to be improved and developed.
Disclosure of Invention
The present invention is directed to a display substrate, a manufacturing method thereof and a related transferring method thereof, which are provided to solve the above-mentioned problems of the prior art, such as the inaccurate positioning between the semiconductor chip and the substrate during mass transfer, which results in the low transferring precision.
The technical scheme adopted by the invention for solving the technical problem is as follows:
a method for preparing a display substrate comprises the following steps:
providing a spherical semiconductor chip;
providing a substrate, wherein a loading groove matched with the shape of the spherical semiconductor chip is arranged on the substrate;
rolling a plurality of spherical semiconductor chips into the loading groove in a rolling manner;
a first electrode and a second electrode are provided on the spherical semiconductor chip, and the first electrode and the second electrode are connected to the substrate, respectively.
Further, the method for manufacturing a display substrate, wherein the step of providing a first electrode and a second electrode on the spherical semiconductor chip and electrically connecting the first electrode and the second electrode to the substrate respectively specifically includes:
removing the part of the spherical semiconductor chip on the substrate, which is exposed out of the loading groove, so as to expose the cross sections of the spherical semiconductor chips;
first and second electrodes are respectively disposed on the cross-section of the spherical semiconductor chip and are respectively connected to the substrate.
Further, the preparation method of the display substrate further comprises:
a passivation layer is disposed between the first electrode and the second electrode.
Further, the preparation method of the display substrate comprises the step of enabling the spherical semiconductor chip to comprise a first semiconductor layer, a multi-quantum well layer wrapping the first semiconductor layer and a second semiconductor layer wrapping the multi-quantum well layer.
Further, the method for manufacturing a display substrate, wherein a first electrode and a second electrode are respectively disposed on a cross section of the spherical semiconductor chip, includes:
the first electrode is provided on the first semiconductor layer to be electrically connected to the first semiconductor layer, and the second electrode is provided on the second semiconductor layer to be electrically connected to the second semiconductor layer.
A display substrate, comprising:
a substrate; a hemispherical semiconductor chip disposed on the substrate; a loading groove matched with the hemispherical semiconductor chip in shape is formed in the substrate, and the arc outer surface of the hemispherical semiconductor chip is arranged in the loading groove;
the hemispherical semiconductor chip is provided with a first electrode and a second electrode on the cross section, and the first electrode and the second electrode are respectively connected with the substrate.
Further, the display substrate, wherein the hemispherical semiconductor chip includes a first semiconductor layer, a multiple quantum well layer wrapped outside the first semiconductor layer, and a second semiconductor layer wrapped outside the multiple quantum well layer.
Further, the loading groove is a semicircular groove, and the groove depth of the loading groove is greater than the sum of the thicknesses of the first semiconductor layer and the multiple quantum well layer and less than the sum of the thicknesses of the first semiconductor layer, the multiple quantum well layer and the second semiconductor layer.
Further, in the display substrate, the first semiconductor layer is electrically connected to the first electrode, and the second semiconductor layer is electrically connected to the second electrode.
A transfer method for transferring a spherical semiconductor chip, comprising:
providing a substrate, wherein a groove matched with the spherical semiconductor chip to be transferred is manufactured on the substrate;
rolling the spherical semiconductor chips to be transferred onto the substrate in a rolling manner, so that the spherical semiconductor chips to be transferred roll into the grooves respectively.
Further, the transferring method further includes:
removing the part of the spherical semiconductor chip on the substrate, which is exposed out of the groove, so as to expose the cross sections of the spherical semiconductor chips;
a first electrode and a second electrode are respectively arranged on the cross section of the spherical semiconductor chip.
Has the advantages that: the invention provides a display substrate, a preparation method and a related transfer method thereof; a loading groove matched with the spherical semiconductor chips in shape is formed in the substrate, and then the spherical semiconductor chips roll into the loading groove in a rolling mode; when a spherical semiconductor chip does not fall into the loading groove, the substrate is inclined or vibrated to ensure that the spherical semiconductor chip to be transferred falls into the loading groove, then the redundant part of the spherical semiconductor chip exposed out of the substrate is removed, and finally, the first electrode, the second electrode and the passivation layer are arranged on the cross section of the spherical semiconductor chip and are respectively connected with the substrate, and finally, the display substrate is prepared.
Drawings
FIG. 1 is a flow chart of a preferred embodiment of a method for fabricating a display substrate according to the present invention;
FIG. 2 is a schematic diagram of the internal structure of the spherical semiconductor chip of the present invention;
FIG. 3 is a schematic view of a structure of a substrate in a method for manufacturing a display substrate according to the present invention;
FIG. 4 is a schematic structural view of the spherical semiconductor chip of the present invention after being transferred to a substrate;
FIG. 5 is a schematic view of a display substrate according to the present invention;
FIG. 6 is a schematic diagram of the operation of transferring the spherical semiconductor chip to the target substrate by the relay substrate according to the present invention;
fig. 7 is a flow chart of a preferred embodiment of a transfer method for transferring a ball-shaped semiconductor chip in the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer and clearer, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the embodiments and claims, the terms "a" and "an" can mean "one or more" unless the article is specifically limited.
In addition, if there is a description of "first", "second", etc. in an embodiment of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
The first embodiment is as follows:
referring to fig. 1, fig. 1 is a flow chart illustrating a method for manufacturing a display substrate according to a preferred embodiment of the present invention; the preparation method comprises the following steps:
s100, providing a spherical semiconductor chip;
s200, providing a substrate, wherein a loading groove matched with the spherical semiconductor chip in shape is formed in the substrate;
s300, rolling a plurality of spherical semiconductor chips into the loading groove in a rolling mode;
and S400, arranging a first electrode and a second electrode on the spherical semiconductor chip, and respectively connecting the first electrode and the second electrode with the substrate.
In a specific embodiment, referring to fig. 2, the spherical semiconductor chip 30 provided by the present invention is spherical in shape, and it is conceivable that each layer inside the spherical semiconductor chip is also spherical correspondingly, and the spherical semiconductor chip includes a first semiconductor layer 31, a mqw layer 32 wrapped outside the first semiconductor layer, and a second semiconductor layer 33 wrapped outside the mqw layer; the first semiconductor layer 31 in the spherical semiconductor chip is the centremost layer, a multi-quantum well layer 32 is wrapped on the outer side surface of the first semiconductor layer, and a second semiconductor layer 33 is wrapped on the outer side surface of the multi-quantum well layer; it is needless to say that other layers, such as a current diffusion layer, a reflection layer, a protection layer, and the like, are included in the spherical semiconductor chip 30, and the present invention is not limited to which layers are included in the spherical semiconductor chip 30, as long as the semiconductor chip is spherical. In addition, as for the material of the spherical semiconductor chip, the first semiconductor layer 31 may be an N-type semiconductor layer, and the second semiconductor layer 33 may be a P-type semiconductor layer; similarly, the first semiconductor layer 31 may be a P-type semiconductor layer, and the second semiconductor layer 33 may be an N-type semiconductor layer; the first semiconductor layer 31 may be formed by doping a pentavalent element, such as phosphorus, in a pure semiconductor material, such as gallium nitride (GaN). In the first semiconductor layer, free electrons are majority electrons, and holes are minority electrons, and the conduction is mainly realized by the free electrons. The higher the concentration of the majority (free electrons), the stronger the conductivity of the first semiconductor layer 31; similarly, the second semiconductor layer 33 may be formed by doping a pure semiconductor material, such as gallium nitride (GaN), with a trivalent element, such as boron, to form the second semiconductor layer 33, where holes are majority electrons and free electrons are minority electrons, and conduction is mainly achieved by holes, and the higher the concentration of majority electrons (holes), the stronger the conductivity of the second semiconductor layer 33; it should be understood that each layer of the spherical semiconductor chip 30 may be transparent for transmitting light, and may also be opaque, which is not particularly limited by the present invention.
More specifically, referring to fig. 3 and 4, the present invention further provides a substrate 40, wherein the material of the substrate 40 may be one of glass, sapphire, or wafer; the substrate 40 is shaped via various processes (e.g., thin film, yellow, dry or wet etch, or laser means); then processing and forming a loading groove 41 for loading the spherical semiconductor chip on the substrate 40, wherein the loading groove 41 is a semicircular groove, and the arc in the loading groove 41 is matched with the outer arc of the spherical semiconductor chip; further, the groove depth of the loading groove 41 is greater than the sum of the thicknesses of the first semiconductor layer 31 and the multiple quantum well layer 32 in the spherical semiconductor chip 30, and is less than the sum of the thicknesses of the first semiconductor layer 31, the multiple quantum well layer 32 and the second semiconductor 33, so as to facilitate the stability of the spherical semiconductor chip 30 after being placed in the loading groove, it should be noted that the distribution position and the distribution density of the loading grooves 41 on the substrate 40 are not particularly limited in the present invention, and the position of the loading groove 41 may be set according to requirements during actual use.
Further, the plurality of spherical semiconductor chips 30 are rolled into the loading slot 41 on the substrate 40 in a rolling manner, since the spherical semiconductor chips 30 are all spherical, since the spherical semiconductor chips 30 are all poured onto the substrate 40 at one time when being placed, and then each spherical semiconductor chip is rolled into the loading slot 41 under the inertial motion; for example, the stage holding the plurality of spherical semiconductor chips 30 is grasped by the robot arm, the stage is tilted, and then the plurality of spherical semiconductor chips 30 are rolled into the loading slot 41 of the substrate 40.
Further, after step S300, the method may further include:
step S310, tilting or vibrating the substrate 40 to roll the plurality of spherical semiconductor chips 30 into the loading slots 41, respectively; after the plurality of spherical semiconductor chips 30 are rolled onto the substrate 40, a part of the spherical semiconductor chips 30 may not accurately fall into the loading slot 41, and the spherical semiconductor chips 30 may stay on the substrate 40 and the spherical semiconductor chips 30 need to be moved again; for example, the substrate 40 may be placed on a vibrating device in advance, when the spherical semiconductor chips 30 do not fall into the loading slot 41, the substrate may be vibrated by the vibrating device, so that the spherical semiconductor chips 30 on the substrate 40 move to fall into the loading slot 41, although it is conceivable that the spherical semiconductor chips 30 on the substrate may also move by tilting the substrate 40, further, the spherical semiconductor chips may also move by an external blowing device, and may slide on the substrate more quickly to slide into the loading slot 41 quickly, and thus, a large batch of spherical semiconductor chips 30 may be transferred onto the substrate 40 without precise alignment; of course, the above-mentioned vibration of the substrate or the external blowing device is only an example and is not intended to limit the present invention, and other methods may be adopted for moving the spherical semiconductor.
It should be noted that a layer of connecting material, such as glue or a low melting point metal, is further disposed in the loading slot 41, the connecting material is uniformly coated on the bottom of the loading slot 41, and the spherical semiconductor chip 30 falling into the loading slot 41 is bonded to the substrate 40 by the temperature rise or fall; therefore, the spherical semiconductor chips 30 that have fallen into the loading slots 41 when the substrate is tilted or shaken do not move out of the loading slots 41 again due to the movement of the substrate 40, and only the spherical semiconductor chips 30 that have not fallen into the loading slots 41 on the substrate 40 are caused to fall into the loading slots.
Further, the step S400 specifically includes:
s410, removing the part of the spherical semiconductor chip on the substrate, which is exposed out of the loading groove, and exposing the cross sections of the spherical semiconductor chips;
after all the spherical semiconductor chips 30 are transferred into the loading grooves 41 on the substrate 40, the parts of the spherical semiconductor chips 30 exposed from the substrate are removed by using laser, dry etching, wet etching, chemical mechanical polishing or the like, so that the cross sections of the spherical semiconductor chips 30 are exposed, and the cross sections include the first semiconductor layer 31, the multiple quantum well layer 32 and the second semiconductor layer 33.
S420, respectively arranging a first electrode and a second electrode on the cross section of the spherical semiconductor chip, and respectively connecting the first electrode and the second electrode to the substrate;
further, referring to fig. 5, a first electrode 42 and a second electrode 43 are respectively disposed on the cross section of the spherical semiconductor chip, and the first electrode 42 and the second electrode 43 are respectively disposed on the corresponding semiconductor layers, that is, the first electrode 42 is correspondingly disposed on the first semiconductor layer 31, and the second electrode 43 is disposed on the second semiconductor layer 33, for example, if the first semiconductor layer 31 is a P-type semiconductor layer, the first electrode 42 is a P-electrode, if the second semiconductor layer 33 is an N-type semiconductor layer, the second electrode 43 is an N-electrode, that is, the type of the electrode is the same as the type of the semiconductor layer; wherein, the first electrode 42 and the second electrode 43 are further connected to the corresponding circuits on the substrate 40 to achieve the display effect; further, the shape of the first electrode 42 or the second electrode 43 is a dot shape or a ring shape, specifically, when the first semiconductor layer 31 is the innermost layer of the spherical semiconductor chip, the first electrode 42 disposed on the upper surface is a dot shape, and the second electrode 43 disposed on the periphery is a ring shape; wherein the first electrode 42 and the second electrode 43 may be formed on the cross section of the ball-shaped semiconductor chip through a photolithography process, a metal evaporation process, or a lift-off process.
Further, the step S420 further includes, before:
a passivation layer 44 is disposed between the first electrode and the second electrode, and in a more specific embodiment, with continuing reference to fig. 5, after the first electrode 42 and the second electrode 43 are formed on the cross section of the spherical semiconductor chip 30, the passivation layer 44 is required to be formed, and the passivation layer is disposed between the first electrode 42 and the second electrode 43; because the excess part of the spherical semiconductor chip 30 exposed out of the substrate is removed and the cross section is exposed to the air, in order to prevent oxidation, the passivation layer 44 is disposed on the cross section of the spherical semiconductor chip 30 to effectively prevent the semiconductor from contacting the external environment, so as to protect the semiconductor; the passivation layer 44 may be formed on the cross section of the spherical semiconductor chip 30 by a plating process, a photolithography process, a dry etching process, a wet etching process, or the like, which is merely exemplary and not intended to limit the present invention.
The method for preparing the display substrate can realize rapid and accurate semiconductor transfer to the display substrate without accurate alignment on the display substrate when the semiconductor chips are transferred, thereby reducing the technical complexity, the technical cost is saved, the method is convenient and fast, the transfer efficiency is improved, and meanwhile, the method is easy to realize, so that the transfer yield is improved, and the processing efficiency of the display substrate is effectively improved.
Example two:
based on the above manufacturing method of the display substrate, the present invention further provides a display substrate, please continue to refer to fig. 3 and fig. 5, the display substrate includes:
a substrate 40; a hemispherical semiconductor chip disposed on the substrate; a loading groove 41 matched with the hemispherical semiconductor chip in shape is formed in the substrate 40, and the arc outer surface of the hemispherical semiconductor chip is arranged in the loading groove 41;
a first electrode 42 and a second electrode 43 are disposed on the cross section of the hemispherical semiconductor chip, and the first electrode 42 and the second electrode 43 are respectively connected to the substrate 40.
In this embodiment, the material of the substrate 40 may be one of glass, sapphire and wafer, and a loading slot for loading the spherical semiconductor chip is processed on the substrate 40; the loading groove is a semicircular groove, and the arc in the loading groove 41 is matched with the outer arc of the spherical semiconductor chip; the hemispherical semiconductor chip comprises a first semiconductor layer 31, a multiple quantum well layer 32 wrapped outside the first semiconductor layer, and a second semiconductor layer 33 wrapped outside the multiple quantum well layer, and further, the groove depth of the loading groove 41 is greater than the sum of the thicknesses of the first semiconductor layer 31 and the multiple quantum well layer 32, and is less than the sum of the thicknesses of the first semiconductor layer 31, the multiple quantum well layer 32 and the second semiconductor layer 33.
As a further proposal, a passivation layer 44 is arranged on the cross section of the hemispherical semiconductor; the first semiconductor layer 31 is electrically connected to the first electrode 42, the second semiconductor layer 33 is electrically connected to the second electrode 43, and specifically, in order to effectively prevent the semiconductor layer from contacting with the external environment and to perform a protective function, a passivation layer 44 is formed on the cross section of the semiconductor chip, and then the first electrode 42 is correspondingly disposed on the first semiconductor layer 31, and the second electrode 43 is disposed on the second semiconductor layer 33; in addition, for the material of the hemispherical semiconductor chip, the first semiconductor layer 31 may be an N-type semiconductor layer, and the second semiconductor layer 33 may be a P-type semiconductor layer; similarly, the first semiconductor layer 31 may be a P-type semiconductor layer, and the second semiconductor layer 33 may be an N-type semiconductor layer.
As a further solution, please refer to fig. 6, the present invention further provides a relay substrate 50, wherein the structure of the relay substrate 50 is the same as the display substrate, except that it is only used for relay and has no display function; after transferring the spherical semiconductor chips to the relay substrate 50, all the spherical semiconductor chips on the relay substrate 50 are transferred to a target substrate 60 (e.g., a display backplane of a television), wherein, the target substrate 60 is pre-configured with a first bonding electrode 61 and a second bonding electrode 62 (connection and conduction) which are matched with the first electrode and the second electrode of the spherical semiconductor chip (shape, size and position are completely the same), the first electrode 42 and the second electrode 43 on the cross section of the spherical semiconductor chip are connected with the bonding electrodes and then inversely installed on the target substrate (i.e. the spherical surface is exposed, the cross section is connected with the bonding electrodes), then a passivation layer is formed on the spherical surface of the spherical semiconductor chip to block the influence of the external environment, and finally, all the spherical semiconductor chips on the relay substrate 50 are transferred to the target substrate 60; it is conceivable that, in order to facilitate transfer of the spherical semiconductor chips on the relay substrate 50, there is no connecting material or a small amount of connecting material in the loading slot on the relay substrate 50.
Example three:
based on the above method for manufacturing a display substrate, the present invention further provides a transferring method for transferring a spherical semiconductor chip, referring to fig. 7, the method includes:
s1, providing a substrate, wherein a groove matched with the spherical semiconductor chip to be transferred is manufactured on the substrate;
and S2, rolling the spherical semiconductor chips to be transferred onto the substrate in a rolling manner, so that the spherical semiconductor chips to be transferred roll into the grooves respectively.
In this embodiment, a spherical semiconductor chip and a substrate are provided, a groove matched with the spherical semiconductor chip is formed on the substrate, a plurality of spherical semiconductor chips are required to be transferred onto the substrate in the semiconductor transfer process, the spherical semiconductor chips can be rolled on the substrate by being poured onto the substrate at one time, and can fall into the groove on the substrate in the rolling process, and the accurate transfer of the semiconductor can be realized by the transfer mode without accurately aligning each semiconductor with the substrate.
As a further scheme, the step S2 is followed by:
step S3, removing the exposed portions of the spherical semiconductor chips on the substrate to the grooves to expose the cross sections of the spherical semiconductor chips;
a first electrode and a second electrode are respectively arranged on the cross section of the spherical semiconductor chip.
After all spherical semiconductor chips to be transferred are transferred into the grooves on the substrate, laser, dry etching, wet etching, chemical mechanical polishing or the like is used to remove the parts of the spherical semiconductor chips exposed out of the substrate, expose the cross sections of the spherical semiconductor chips, and respectively arrange a first electrode and a second electrode on the cross sections, for example, the cross sections include a first semiconductor layer and a second semiconductor layer, and then respectively arrange the first electrode and the second electrode on the corresponding semiconductor layers, namely, the first electrode is correspondingly arranged on the first semiconductor layer, and the second electrode is arranged on the second semiconductor layer; for example, if the first semiconductor layer is a P-type semiconductor layer, the first electrode is a P-electrode, and if the second semiconductor layer is an N-type semiconductor layer, the second electrode is an N-electrode, that is, the type of the electrode is the same as the type of the semiconductor layer.
Optionally, the substrate is a display substrate, and the method further includes: and connecting the first electrode and the second electrode with corresponding driving display circuits on the display substrate so as to drive the spherical semiconductor chips to emit light through the driving display circuits preset on the display substrate.
It should be understood that the driving display circuit preset on the display substrate may be set at the time of shipment of the display substrate or may be manufactured before the spherical semiconductor chip transfer is performed. Here, the number of the carbon atoms is not particularly limited. Optionally, the substrate is a relay substrate, and the method further includes: and transferring all the spherical semiconductor chips on the relay substrate to a target substrate (such as a display back plate of a television), wherein the target substrate is pre-configured with a first bonding electrode and a second bonding electrode (connection and conduction) which are matched with the first electrode and the second electrode of the spherical semiconductor chip (such as completely same in shape, size and position), and the first electrode and the second electrode on the cross section of the spherical semiconductor chip are connected with the bonding electrodes and then are inversely arranged on the target substrate (namely the spherical surface is exposed, and the cross section is connected with the bonding electrodes).
Optionally, a passivation layer is further formed on the spherical surface of the spherical semiconductor chip to block the influence of the external environment, and finally, the spherical semiconductor chips on the relay substrate are transferred to the target substrate.
The following describes the transferring method for transferring a spherical semiconductor chip according to the present invention in more detail by taking a specific application scenario of the present embodiment as an example.
In a specific embodiment, the spherical semiconductor chip placed on the object stage can be poured onto the substrate placed in the carrier by a mechanical arm at one time, and the spherical semiconductor chip can move and fall into the groove of the substrate in the pouring process; it is worth mentioning that when the spherical semiconductor chip does not fall into the groove, the carrier can be inclined or vibrated by starting the power device connected with the carrier, or the spherical semiconductor chip on the substrate can move to fall into the groove by the external blowing device, so that the spherical semiconductor chip can be transferred.
In summary, the present invention provides a display substrate, a method for manufacturing the same, and a related transfer method; a loading groove matched with the spherical semiconductor chips in shape is formed in the substrate, and then the spherical semiconductor chips roll into the loading groove in a rolling mode; when a spherical semiconductor chip does not fall into the loading groove, the substrate is inclined or vibrated to ensure that the spherical semiconductor chip to be transferred falls into the loading groove, then the redundant part of the spherical semiconductor chip exposed out of the substrate is removed, and finally, the first electrode, the second electrode and the passivation layer are arranged on the cross section of the spherical semiconductor chip, and the first electrode and the second electrode are respectively connected with the substrate to finally complete the preparation of the display substrate. The efficiency of processing the display substrate is effectively improved.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This invention is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
Claims (9)
1. A method for preparing a display substrate is characterized by comprising the following steps:
providing a spherical semiconductor chip;
providing a substrate, wherein a loading groove matched with the shape of the spherical semiconductor chip is arranged on the substrate; wherein, a connecting material is arranged in the loading groove;
rolling a plurality of spherical semiconductor chips into the loading groove in a rolling manner;
removing the part of the spherical semiconductor chip on the substrate, which is exposed out of the loading groove, so as to expose the cross sections of the spherical semiconductor chips;
first and second electrodes are respectively disposed on the cross-section of the spherical semiconductor chip and are respectively connected to the substrate.
2. The method for manufacturing a display substrate according to claim 1, further comprising:
a passivation layer is disposed between the first electrode and the second electrode.
3. The method according to claim 2, wherein the spherical semiconductor chip comprises a first semiconductor layer, a multi-quantum well layer wrapped outside the first semiconductor layer, and a second semiconductor layer wrapped outside the multi-quantum well layer.
4. The method for manufacturing a display substrate according to claim 3, wherein the disposing the first electrode and the second electrode on the cross section of the spherical semiconductor chip respectively comprises:
the first electrode is provided on the first semiconductor layer to be electrically connected to the first semiconductor layer, and the second electrode is provided on the second semiconductor layer to be electrically connected to the second semiconductor layer.
5. A display substrate manufactured by the method for manufacturing a display substrate according to any one of claims 1 to 4, comprising:
a substrate; a hemispherical semiconductor chip disposed on the substrate; a loading groove matched with the hemispherical semiconductor chip in shape is formed in the substrate, and the arc outer surface of the hemispherical semiconductor chip is arranged in the loading groove; wherein, a connecting material is arranged in the loading groove;
the hemispherical semiconductor chip is provided with a first electrode and a second electrode on the cross section, and the first electrode and the second electrode are respectively connected with the substrate.
6. The display substrate of claim 5, wherein the hemispherical semiconductor chip comprises a first semiconductor layer, a multi-quantum well layer wrapped outside the first semiconductor layer, and a second semiconductor layer wrapped outside the multi-quantum well layer.
7. The display substrate according to claim 6, wherein the loading groove is a semicircular groove, and a groove depth of the loading groove is greater than a sum of thicknesses of the first semiconductor layer and the MQW layer and less than a sum of thicknesses of the first semiconductor layer, the MQW layer, and the second semiconductor layer.
8. The display substrate according to claim 7, wherein the first semiconductor layer is electrically connected to the first electrode, and wherein the second semiconductor layer is electrically connected to the second electrode.
9. A transfer method for transferring a spherical semiconductor chip, comprising:
providing a substrate, wherein a groove matched with a spherical semiconductor chip to be transferred is manufactured on the substrate; wherein, a connecting material is arranged in the groove;
rolling the spherical semiconductor chips to be transferred onto the substrate in a rolling manner, so that the spherical semiconductor chips to be transferred roll into the grooves respectively;
removing the part of the spherical semiconductor chip on the substrate, which is exposed out of the groove, so as to expose the cross sections of the spherical semiconductor chips;
a first electrode and a second electrode are respectively arranged on the cross section of the spherical semiconductor chip.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/128107 WO2021128030A1 (en) | 2019-12-25 | 2019-12-25 | Display substrate, manufacturing method and relevant transfer method therefor |
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| CN111108612A CN111108612A (en) | 2020-05-05 |
| CN111108612B true CN111108612B (en) | 2021-11-02 |
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| US20230215757A1 (en) * | 2020-09-21 | 2023-07-06 | Chongqing Konka Photoelectric Technology Research Institute Co., Ltd. | Transfer System and Transfer Method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4165474A (en) * | 1977-12-27 | 1979-08-21 | Texas Instruments Incorporated | Optoelectronic displays using uniformly spaced arrays of semi-sphere light-emitting diodes |
| CN108257905A (en) * | 2018-01-10 | 2018-07-06 | 歌尔股份有限公司 | Transfer method, display device and the electronic equipment of micro- light emitting diode |
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| CN100578831C (en) * | 2007-04-16 | 2010-01-06 | 上海第二工业大学 | Method for enhancing external quantum efficiency of GaN based LED chip of great power |
| CN107978665B (en) * | 2017-11-16 | 2019-09-17 | 歌尔股份有限公司 | Micro LED preparation method |
| CN207705223U (en) * | 2017-12-11 | 2018-08-07 | 上海九山电子科技有限公司 | A kind of miniature LED chip and its transfer equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4165474A (en) * | 1977-12-27 | 1979-08-21 | Texas Instruments Incorporated | Optoelectronic displays using uniformly spaced arrays of semi-sphere light-emitting diodes |
| CN108257905A (en) * | 2018-01-10 | 2018-07-06 | 歌尔股份有限公司 | Transfer method, display device and the electronic equipment of micro- light emitting diode |
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| CN111108612A (en) | 2020-05-05 |
| WO2021128030A1 (en) | 2021-07-01 |
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