CN111105968B - Ion source grid mesh device - Google Patents
Ion source grid mesh device Download PDFInfo
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- CN111105968B CN111105968B CN201911243061.XA CN201911243061A CN111105968B CN 111105968 B CN111105968 B CN 111105968B CN 201911243061 A CN201911243061 A CN 201911243061A CN 111105968 B CN111105968 B CN 111105968B
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- grid
- insulating frame
- ion source
- grid mesh
- mesh
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- 230000000149 penetrating effect Effects 0.000 claims abstract description 5
- 230000001133 acceleration Effects 0.000 claims description 10
- 230000000903 blocking effect Effects 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 238000009434 installation Methods 0.000 abstract description 10
- 230000010354 integration Effects 0.000 abstract description 3
- 238000012423 maintenance Methods 0.000 abstract description 2
- 238000010884 ion-beam technique Methods 0.000 description 16
- 238000009826 distribution Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
The invention provides an ion source grid mesh device which comprises at least two grid meshes and an insulating frame body fixed on the outer side of each grid mesh, wherein an electrode bolt connected with the grid mesh on the inner side is arranged on the outer side of each insulating frame body in a penetrating mode, two adjacent insulating frame bodies are connected through threads, and the relative distance between the two adjacent grid meshes is changed through rotating the insulating frame bodies and utilizing the threads. The ion source grid mesh device provided by the invention can simplify the installation steps of the ion grid mesh, increase the integration level of the ion grid mesh system, ensure the installation and positioning precision of the ion grid mesh while realizing quick replacement, and simultaneously realize the 'zooming' function of the ion grid mesh system by utilizing the rotation of the insulating frame body to adjust the relative distance between the grid meshes, thereby being convenient for maintenance and replacement, saving the time and improving the working efficiency.
Description
Technical Field
The invention relates to the field of optics, in particular to an ion source grid mesh device.
Background
Ion beam machining is one of the important processes of the modern micro-nano precision machining. It is characterized by that it utilizes the plasma produced by glow discharge of organic gas and their mixture, and makes them pass through such processes of extraction, bundling, acceleration and neutralization to form high-energy high-speed neutral ion beam, and in the normal-temp. or high-temp. ultra-vacuum environment the workpiece made of metal, alloy, oxide, compound, mixed material, semiconductor, insulator and superconductor can be polished, cleaned, etched, sputtered, deposited, coated and injected to make superfine processing.
In order to obtain the required ion beam, the ion beam current needs to be extracted from the discharge chamber, and the ion grid system is the main device for extracting the ion beam current from the discharge chamber. The grid mesh is a device for beam extraction and modification in the ion source, a mesh electrode is made of graphite or molybdenum and is positioned at the front end of an ion source outlet, and the ion beam can be extracted from an ion source discharge chamber by changing the geometric characteristics and the relative position of the grid mesh and controlling the potential distribution on the grid mesh, so that the ion beam has certain spatial concentration and spatial distribution shape.
As shown in fig. 1 and 2, the grid in the ion grid system is generally a three-grid structure, and includes a screen grid, an accelerating grid and a decelerating grid, respectively, where the screen grid is closest to the plasma, the decelerating grid is farthest from the plasma, the accelerating grid is located between the screen grid and the decelerating grid, the highest potential of the screen grid is close to the potential inside the plasma, the potential of the accelerating grid is a negative value, and the potential of the decelerating grid is zero. The ion beam current passes through three grids in sequence to finally obtain the ion beam with certain spatial concentration distribution. The grid meshes of the three-grid structure have high requirements on the installation and adjustment precision, and the distance between the grid meshes, the relative deflection angle of holes on the grid meshes and the like have great influence on the working stability of the ion grid mesh system and the control capability of ion beam current.
At present, in the use process of an ion source, the grid mesh needs to be detached and reinstalled in order to ensure the working performance of the ion source. The installation of the three-grid ion grid mesh mainly depends on the experience of operators, the installation and adjustment efficiency is low, the installation and adjustment precision and the repetition precision are different from person to person, and if the installation and adjustment are not proper, the spatial distribution error of ion beam current is increased, and the processing efficiency and the processing precision are reduced.
In addition, once the ion grid mesh of the existing triple-grid structure is assembled, the working distance and the working performance of the ion grid mesh are determined, the on-line adjustment and optimization of a removal function can not be carried out according to the characteristics of surface shape errors, namely, the zoom function can not be realized, and the grid mesh needs to be replaced if the size of the removal function, the material removal amount and the like need to be changed.
Disclosure of Invention
In order to solve the technical problem, the invention provides an ion source grid device, which adopts the following technical scheme:
the invention provides an ion source grid mesh device, comprising: the grid mesh structure comprises at least two grid meshes and an insulating frame body fixed on the outer side of each grid mesh, wherein an electrode bolt connected with the grid mesh on the inner side is arranged on the outer side of each insulating frame body in a penetrating mode, two adjacent insulating frame bodies are connected through threads, and the relative distance between the two adjacent grid meshes is changed through rotating the insulating frame bodies and utilizing the threads.
Preferably, the grid mesh is three pieces, namely a screen grid, an acceleration grid and a deceleration grid.
Preferably, the grid is provided with a circle of blocking edge in a protruding mode, the outer ring of the blocking edge is a grid fixing part, and the inner ring of the blocking edge is a grid surface part.
Preferably, a through hole is separately provided at the mesh fixing portion.
Preferably, the insulating frame has a ledge.
Preferably, a threaded hole is formed in the table edge at a position corresponding to the through hole.
Preferably, the grid fixing part is fixed on the platform edge by screws.
Preferably, the number of the threaded holes is two or three, when the number of the threaded holes is two, the threaded holes are distributed at two ends of the diameter of the platform edge, and when the number of the threaded holes is three, the threaded holes are distributed on the platform edge in an equilateral triangle shape.
Preferably, the electrode bolt is a copper electrode bolt, a gold electrode bolt, or a silver electrode bolt.
Preferably, the insulating frame is a ceramic frame.
Compared with the prior art, the invention has the beneficial effects that:
1. the grid mesh is integrated in a threaded connection mode, so that the installation steps of the grid mesh are simplified, and the integration level of an ion grid mesh system is increased.
2. The threaded connection mode can guarantee the positioning precision of grid installation, and improve the working stability of the grid and the control capability of beam current.
3. The grid mesh is stable in position in the using process, and the stability and accuracy of ion beam current space distribution are guaranteed, so that the processing precision of ion beam processing is improved.
4. The relative distance between the grids is adjusted by rotating the insulating frame body, so that the function can be removed in an online adjusting and optimizing mode according to the characteristics of surface shape errors during working, the 'zooming' function of the ion grid system is realized, the processing efficiency is improved, and the processing precision is ensured.
5. The grid mesh in threaded connection is convenient to maintain and replace, when the grid mesh is damaged, the grid mesh can be detached and replaced by a new grid mesh for use, time is saved, and working efficiency is improved.
Drawings
FIG. 1 is a schematic diagram of the structure of a grid;
FIG. 2 is a schematic diagram of the potential distribution of a grid;
FIG. 3 is a schematic diagram of a tri-grid device according to one embodiment of the present invention;
FIG. 4 is a schematic structural diagram of an insulating frame according to one embodiment of the invention;
FIG. 5 is a schematic diagram of a grid configuration according to one embodiment of the present invention;
fig. 6 is a schematic cross-sectional view of an assembled grid and insulating frame according to an embodiment of the invention.
Wherein the reference numerals include: the screen grid comprises, by weight, 1-1 parts of screen grids, 1-2 parts of acceleration grids, 1-3 parts of deceleration grids, 1-4 parts of blocking edges, 1-5 parts of grid mesh fixing parts, 1-6 parts of grid mesh surfaces, 1-7 parts of through holes, 2 parts of insulating frame bodies, 2-1 parts of threads, 2-2 parts of table edges, 2-3 parts of threaded holes and 3 parts of electrode bolts.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not to be construed as limiting the invention.
The embodiment of the invention provides an ion source grid mesh device which comprises at least two grid meshes and an insulating frame body fixed on the outer side of each grid mesh, wherein an electrode bolt connected with the grid mesh on the inner side is arranged on the outer side of each insulating frame body in a penetrating mode, the electrode bolt supplies power to the grid meshes, two adjacent insulating frame bodies are connected through threads, and the relative distance between the two adjacent grid meshes is changed through rotating the insulating frame bodies and utilizing the threads.
The purpose of the threaded connection of the insulating frame body is to facilitate the disassembly and assembly of the ion source grid device, and meanwhile, the threaded connection can also ensure the installation precision of the grid.
The specific number of the grids is determined according to the use purpose, and a plurality of grids are stacked to form an ion grid system which is placed at the front end of the ion source outlet. By changing the geometrical characteristics and relative positions of the grids and controlling the potential distribution on the grids, the ion beam current can be led out from the ion source discharge chamber and obeys certain spatial distribution.
In order to solve the problems that the imbalance of an ion grid system is caused by low efficiency and poor precision of manually installing and adjusting the grid, the space distribution error of ion beam current is increased finally, and the processing efficiency and the processing precision are reduced, the grid is assembled together in a threaded connection mode, the integration of the grid is realized, the maintenance and the replacement of the follow-up grid are convenient, the time is saved, and the working efficiency is improved.
One advantage of the threaded connection between the insulating frame bodies is that the assembling and adjusting precision and the repeating precision of the grid mesh can be ensured, and the working stability of the grid mesh and the control capability of the beam current are improved. The other advantage is that the relative distance between two adjacent grids can be changed by rotating the insulating frame body and utilizing threads, so that the distance between the grids can be adjusted, the function can be removed by online adjustment and optimization aiming at the characteristic of surface shape errors during working, the 'zooming' function of the ion grid system is realized, the processing efficiency is improved, and the processing precision is ensured.
The grid commonly used in the ion source for optical processing is a three-grid structure, and the structure of the three-grid device is exemplified below, and the structures of the two-grid and four-grid devices can be obtained in the same way.
As shown in fig. 3, a triple-grid arrangement for an ion source, comprising: three grids and three insulating frame bodies 2, three insulating frame bodies 2 are the same in structure, and the head and the tail are in threaded connection in order, a grid is assembled in one insulating frame body 2, and an electrode bolt 3 connected with the grid on the inner side is arranged on the outer side of the insulating frame body 2 in a penetrating mode.
As shown in fig. 4, a screw 2-1 is formed on the insulating frame 2, and the two insulating frames 2 are screwed together.
A platform edge 2-2 for fixing the grid net extends to the hollow area inside the insulating frame 2.
With continued reference to fig. 3, the three grids are respectively a screen grid 1-1, an acceleration grid 1-2 and a deceleration grid 1-3 which are sequentially close to the ion source discharge chamber, the screen grid 1-1 is closest to the ion source discharge chamber, the deceleration grid 1-2 is farthest from the ion source discharge chamber, the acceleration grid 1-2 is located between the screen grid 1-1 and the deceleration grid 1-3, the potential of the screen grid 1-1 is a positive value, the potential of the acceleration grid is a negative value, and the potential of the deceleration grid is zero. The screen 1-1, the acceleration grid 1-2 and the deceleration grid 1-3 have no difference in structure except for the difference in potential distribution, and the screen 1-1 is taken as an example for explanation.
As shown in fig. 5 and 6, the screen 1-1 has a circular outer contour in plan projection, which facilitates the assembly of the screen 1-1 into the insulating frame 2. A circle of blocking edges 1-4 protrude from a screen 1-1, grid fixing parts 1-5 are arranged on the outer rings of the blocking edges 1-4, grid surface parts 1-6 are arranged on the inner rings of the blocking edges 1-4, the grid fixing parts 1-5 are lapped on a table edge 2-2, through holes 1-7 are formed in the grid fixing parts 1-5, threaded holes 2-3 are formed in the table edge 2-2 corresponding to the through holes 1-7, and the grid fixing parts 1-5 are fixed to the table edge 2-2 through screws. The screws play a role in positioning and fixing the screen 1-1, and the mounting and positioning accuracy of the screen 1-1 is ensured.
In a specific embodiment, the threaded holes 2-3 are distributed at both ends of the diameter of the platform edge 2-2 when the number of the threaded holes 2-3 is two, and are distributed on the platform edge 2-2 in an equilateral triangle when the number of the threaded holes 2-3 is three.
One end of the electrode bolt 3 extending into the insulating frame body 2 is connected with the screen grid 1-1, one end of the electrode bolt 3 extending out of the insulating frame body 2 is connected with an ion source power supply system, and the electrode bolt 3 is used for controlling the potential of the grid mesh, so that an ion beam of the ion source is led out from an ion source discharge chamber and has certain spatial concentration and spatial distribution shape.
Because the grids need to be insulated, short circuit caused by connection between the grids is prevented, and therefore the insulated frame body in the embodiment of the invention is made of rubber, wood or ceramic and other insulating materials, and connection between the grids is prevented. The grid is an electric conductor, preferably a graphite grid.
The invention can rotate the insulating frame body 2 to adjust the relative distance between the screen grid 1-1 and the acceleration grid 1-2 or between the acceleration grid 1-2 and the deceleration grid 1-3 by utilizing the screw thread, and can change the relative deflection angle between the holes of the effective action area 1-5 of each grid mesh by rotating, and carry out online adjustment and optimization of a removal function aiming at the characteristic of surface shape error, thereby realizing the 'zooming' function of the ion grid mesh system, improving the processing efficiency and ensuring the processing precision.
Because the insulating frame bodies for assembling the grid nets in the grid net device are connected together in a threaded mode, when a certain grid net is damaged, the insulating frame body corresponding to the damaged grid net can be detached from the grid net device, a new grid net is replaced in the insulating frame body, and finally the insulating frame body is connected to the original position again in a threaded mode to be used, so that the time is saved, and the working efficiency is improved.
The above embodiments of the present invention should not be construed as limiting the scope of the present invention. Any other corresponding changes and modifications made according to the technical idea of the present invention should be included in the protection scope of the claims of the present invention.
Claims (8)
1. An ion source grid mesh device comprises at least two grid meshes and is characterized by also comprising an insulating frame body fixed on the outer side of each grid mesh, wherein an electrode bolt connected with the grid mesh on the inner side is arranged on the outer side of each insulating frame body in a penetrating manner, two adjacent insulating frame bodies are connected through threads, and the relative distance between the two adjacent grid meshes is changed by rotating the insulating frame bodies and utilizing the threads;
the grid mesh is divided into three pieces, namely a screen grid, an acceleration grid and a deceleration grid;
the grid net is provided with a circle of blocking edge in a protruding mode, the outer ring of the blocking edge is a grid net fixing part, and the inner ring of the blocking edge is a grid net surface part.
2. The ion source grid device of claim 1, wherein through holes are separately provided in the grid fixing portion.
3. The ion source grid arrangement of claim 2, wherein the insulating frame has a ledge.
4. The ion source grid device of claim 3, wherein threaded holes are formed in the ledge at locations corresponding to the through holes.
5. The ion source grid device of claim 4, wherein the grid fixing portion is fixed to the ledge by screws.
6. The ion source grid device of claim 4, wherein the number of the threaded holes is two or three, and when the number of the threaded holes is two, the threaded holes are distributed at two ends of the diameter of the table edge, and when the number of the threaded holes is three, the threaded holes are distributed on the table edge in an equilateral triangle shape.
7. The ion source grid device of claim 1, wherein the electrode bolts are copper electrode bolts, gold electrode bolts, or silver electrode bolts.
8. The ion source grid device of claim 1, wherein the insulating frame is a ceramic frame.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911243061.XA CN111105968B (en) | 2019-12-06 | 2019-12-06 | Ion source grid mesh device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911243061.XA CN111105968B (en) | 2019-12-06 | 2019-12-06 | Ion source grid mesh device |
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| Publication Number | Publication Date |
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| CN111105968A CN111105968A (en) | 2020-05-05 |
| CN111105968B true CN111105968B (en) | 2021-06-15 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102355791A (en) * | 2011-09-28 | 2012-02-15 | 南京创能电力科技开发有限公司 | Device for insulation connecting between cathode and anode of plasma generator |
| CN204289361U (en) * | 2014-11-19 | 2015-04-22 | 中国电子科技集团公司第四十八研究所 | A kind of for ionogenic aperture plate device |
| CN107112176A (en) * | 2015-04-21 | 2017-08-29 | 日新离子机器株式会社 | Ion beam is drawn with electrode, ion gun |
| US20180342367A1 (en) * | 2015-11-16 | 2018-11-29 | Varian Semiconductor Equipment Associates, Inc. | Low profile extraction electrode assembly |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3010978B2 (en) * | 1993-06-17 | 2000-02-21 | 日新電機株式会社 | Ion source device |
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- 2019-12-06 CN CN201911243061.XA patent/CN111105968B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102355791A (en) * | 2011-09-28 | 2012-02-15 | 南京创能电力科技开发有限公司 | Device for insulation connecting between cathode and anode of plasma generator |
| CN204289361U (en) * | 2014-11-19 | 2015-04-22 | 中国电子科技集团公司第四十八研究所 | A kind of for ionogenic aperture plate device |
| CN107112176A (en) * | 2015-04-21 | 2017-08-29 | 日新离子机器株式会社 | Ion beam is drawn with electrode, ion gun |
| US20180342367A1 (en) * | 2015-11-16 | 2018-11-29 | Varian Semiconductor Equipment Associates, Inc. | Low profile extraction electrode assembly |
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