CN111101110B - Gas inlet integrated structure, process chamber and semiconductor processing equipment - Google Patents

Gas inlet integrated structure, process chamber and semiconductor processing equipment Download PDF

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Publication number
CN111101110B
CN111101110B CN201811267482.1A CN201811267482A CN111101110B CN 111101110 B CN111101110 B CN 111101110B CN 201811267482 A CN201811267482 A CN 201811267482A CN 111101110 B CN111101110 B CN 111101110B
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magnetic
electromagnet
process chamber
permanent magnet
piece
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CN111101110A (en
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王勇飞
兰云峰
王帅伟
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating

Abstract

The invention discloses an air inlet integrated structure, a process chamber and semiconductor processing equipment. The integrated structure of admitting air includes: the air inlet piece is provided with a process gas channel; the blocking piece is rotatably connected with the air inlet piece; the magnetic assembly comprises a first magnetic part and a second magnetic part, the first magnetic part is connected with the blocking part, and the second magnetic part is connected with the air inlet part; and the magnetic pole of one of the first magnetic part and the second magnetic part can be changed so as to generate magnetic force with different directions between the first magnetic part and the second magnetic part, and the magnetic force can drive the plugging part to rotate so that the plugging part plugs or opens the process gas channel. The process gas channel can be automatically blocked or opened by utilizing the magnetic force between the magnetic components, the automation degree of equipment can be improved, the analysis of the problem that the particles are influenced by human factors is eliminated, and the labor intensity of workers is reduced.

Description

Gas inlet integrated structure, process chamber and semiconductor processing equipment
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to an air inlet integrated structure and semiconductor processing equipment.
Background
In recent years, semiconductor devices have been rapidly developed, and they are related to semiconductors, integrated circuits, solar panels, flat panel displays, microelectronics, light emitting diodes, and the like, and these devices are mainly composed of a plurality of thin films formed on a substrate and having different thicknesses. These film forming apparatuses include CVD (chemical vapor deposition), ALD (atomic layer vapor deposition), and the like. The ALD and CVD process equipment has a large number of process lines and process gases enter the interior of the process chamber from the upper end of the top lid. The top cover can be opened and closed for taking and placing the substrate and convenient maintenance. Therefore, the process chamber is provided with the air inlet part, the air inlet part is provided with the process gas channel, and the top cover is closed and then is hermetically connected with the air inlet channel on the top cover through the sealing ring arranged between the air inlet part and the top cover, so that the process gas is prevented from leaking. After the cover is opened, the process gas passage port of the gas inlet piece is exposed to the atmosphere and the passage port faces upwards. Particles may fall into the process gas channel when the substrate is removed or the lower surface of the lid is wiped. Particles falling into the process gas channel enter the process chamber along with the process gas flow and fall on the surface of the substrate, so that the defects of film forming particles are caused, and the quality of devices and the yield of products are influenced.
At present, technicians in the industry generally use dust-free cloth or broken silicon wafers to shield the process gas channel after the cover is opened, but the possibility of polluting pipelines still exists, the operation is not met with the requirements of semiconductors, and sometimes even the operation is forgotten, so that the conventional shielding method has large human factors and is uncertain in shielding qualification.
Disclosure of Invention
The invention aims to solve at least one technical problem in the prior art, and provides a gas inlet integrated structure, a process chamber and semiconductor processing equipment.
In order to achieve the above object, in a first aspect of the present invention, there is provided a gas inlet integrated structure for selectively supplying a process gas into a process chamber, the gas inlet integrated structure comprising:
the gas inlet part is provided with a process gas channel;
the blocking piece is rotatably connected with the air inlet piece;
the magnetic assembly comprises a first magnetic part and a second magnetic part, the first magnetic part is connected with the blocking part, and the second magnetic part is connected with the air inlet part; and the number of the first and second electrodes,
the magnetic pole of one of the first magnetic part and the second magnetic part is changeable so as to generate magnetic force with different directions between the first magnetic part and the second magnetic part, and the magnetic force can drive the blocking part to rotate so that the blocking part blocks or opens the process gas channel.
Optionally, the first magnetic member is a permanent magnet, and the second magnetic member is an electromagnet.
Optionally, the electromagnet comprises an electromagnet body part, and a first electromagnet part and a second electromagnet part respectively located at two ends of the electromagnet body part, and a winding direction of the first electromagnet part is opposite to a winding direction of the second electromagnet part.
Optionally, the permanent magnet includes a first permanent magnet and a second permanent magnet, the first permanent magnet is disposed opposite to the first electromagnetic portion, the second permanent magnet is disposed opposite to the second electromagnetic portion, and ends of the first permanent magnet and the second permanent magnet having the same magnetism are fixed together.
Optionally, a groove is arranged on the air inlet part and used for accommodating the second magnetic part.
Optionally, the blocking piece is provided with at least one first rotating portion, and the air inlet piece is provided with at least one second rotating portion; and the number of the first and second electrodes,
the first rotating part is matched with the corresponding second rotating part, so that the plugging piece rotates relative to the air inlet piece, and the plugging piece plugs or opens the process gas channel.
Optionally, the first rotating portion is a hole structure, and the second rotating portion is a pin structure, and the pin structure is inserted into the hole structure.
Optionally, the blocking piece is symmetrically provided with two first rotating portions, and the air inlet piece is symmetrically provided with two second rotating portions.
In a second aspect of the present invention, a process chamber is provided, which includes a chamber body, a top cover covering the chamber body, and an air intake integrated structure sandwiched between the top cover and the chamber body, where the air intake integrated structure is the air intake integrated structure described above, and the process gas channel in the air intake member can selectively communicate an air intake hole on the top cover with the inside of the chamber body.
Optionally, the process chamber further includes a current reversing switching element, and when the second magnetic element is an electromagnet, the current reversing switching element is electrically connected to a coil wound on the electromagnet to switch a current direction in the coil.
Optionally, the current reversing switch is disposed on the chamber body and located on one side of the top cover, and when the top cover is opened, the top cover can abut against the current reversing switch, and when the top cover is closed, the top cover is separated from the current reversing switch.
In a third aspect of the invention, a semiconductor processing apparatus is provided, comprising the process chamber described above.
The invention provides a gas inlet integrated structure, a process chamber and semiconductor processing equipment. The air inlet device comprises an air inlet piece, a plugging piece and a magnetic assembly. Wherein, the air inlet is provided with the process gas passageway, and the shutoff piece is connected with the air inlet rotationally. The magnetic assembly comprises a first magnetic part and a second magnetic part, the first magnetic part is connected with the plugging part, and the second magnetic part is connected with the air inlet part. The magnetic pole of one of the first magnetic part and the second magnetic part is changeable so as to generate magnetic force with different directions between the first magnetic part and the second magnetic part, and the magnetic force can drive the plugging part to rotate so that the plugging part plugs or opens the process gas channel. Therefore, the process gas channel can be automatically plugged or opened by utilizing the magnetic force between the magnetic components, the automation degree of equipment can be improved, the cleanliness of the process gas channel can be effectively improved, external particle impurities can be prevented from entering the process chamber through the process gas channel, the analysis that the particle problems are influenced by human factors is eliminated, the labor intensity of workers is reduced, and the economic benefit is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic structural view of an air inlet integrated structure in a blocking position according to a first embodiment of the present invention;
FIG. 2 is a schematic structural view of an air intake integrated structure in an open position according to a second embodiment of the present invention;
FIG. 3 is a schematic structural view of an air intake member in a third embodiment of the present invention;
FIG. 4a is a schematic structural diagram of a plugging member in a fourth embodiment of the present invention;
fig. 4b is a top view of the closure shown in fig. 4 a;
fig. 4c is a side view of the closure shown in fig. 4 a;
FIG. 5 is a schematic structural diagram of a first magnetic member according to a fifth embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a second magnetic member according to a sixth embodiment of the present invention;
FIG. 7 is a schematic view of a lid of a process chamber in a closed position according to a seventh embodiment of the present invention;
FIG. 8 is a schematic view of a top lid of a process chamber in an open position according to an eighth embodiment of the present invention;
FIG. 9 is a schematic view illustrating a current flow direction of a second magnetic member when a lid of a process chamber is in a closed position according to a ninth embodiment of the present invention;
fig. 10 is a schematic view illustrating a current flow direction of the second magnetic member when the lid of the process chamber is in the open position according to the tenth embodiment of the present invention.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
As shown in fig. 1 to 6, a first aspect of the present invention relates to a gas inlet integrated structure 100 for selectively providing a process gas into a process chamber, the gas inlet integrated structure 100 comprising a gas inlet 110, a blocking member 120 and a magnetic assembly 130.
As shown in fig. 3, the gas inlet 110 is provided with a process gas channel 111, the gas inlet 110 may be made of a metal material, for example, the gas inlet 110 may be made of a metal material such as aluminum, stainless steel, etc., of course, the gas inlet 110 may also be made of a polymer material, for example, the gas inlet 110 may be made of a polymer material such as PTFE, EPI, etc., in this case, the gas inlet 110 is preferably made of a stainless steel material.
As shown in fig. 1 and 2, the blocking member 120 is rotatably connected to the air inlet 110, for example, the blocking member 120 may be connected to the air inlet 110 by a bearing, or the blocking member 120 may be hinged to the air inlet 110. The plugging member 120 may be made of a metal material, for example, the plugging member 120 may be made of a metal material such as aluminum or stainless steel, preferably an aluminum material, but of course, the plugging member 120 may also be made of a polymer material, for example, the plugging member 120 may be made of a polymer material such as PTFE or EPI.
As shown in fig. 1 and 2, the magnetic assembly 130 includes a first magnetic member 131 and a second magnetic member 132, the first magnetic member 131 is connected to the blocking member 120, and the second magnetic member 132 is connected to the air inlet 110. Of course, the first magnetic member 131 may be connected to the air inlet 110, and the second magnetic member 132 may be connected to the blocking member 120. Wherein one of the first and second magnetic members 131 and 132 has a variable magnetic pole to generate a magnetic force with different directions between the first and second magnetic members 131 and 132, and the magnetic force can drive the blocking member 120 to rotate so that the blocking member 120 blocks or opens the process gas channel 111.
Specifically, as shown in fig. 1, assuming that the magnetic pole of the second magnetic member 132 is changeable (for example, the second magnetic member 132 may be an electromagnet, it can be understood that the magnetic pole of the electromagnet is changeable when currents in different directions are applied), when the process inlet channel 111 needs to be blocked (for example, when the structure such as the inlet integrated structure 100 or the process chamber needs to be cleaned), the magnetic direction between the first magnetic member 131 and the second magnetic member 132 may be changed, for example, the first magnetic member 131 faces the second magnetic member 132 and is S-pole, and the second magnetic member 132 faces the first magnetic member 131 and is N-pole, so that the first magnetic member 131 may move towards the direction close to the second magnetic member 132 when receiving the attractive force of the second magnetic member 132, and thus the blocking member 120 may be driven to rotate around the inlet member 110 (for example, the blocking member 120 may rotate clockwise around the inlet member 110), further, the blocking member 120 can block the process gas channel 111, and the relative positions and connection relationships between the components of the gas inlet integrated structure 100 can be as shown in fig. 1. On the contrary, as shown in fig. 2, when the process gas channel 111 needs to be opened, the current direction of the electromagnet may be changed, so that the second magnetic member 132 presents an S-pole on the surface facing the first magnetic member 131, and thus, the first magnetic member 131 may move in the direction away from the second magnetic member 132 when receiving the repulsive force of the second magnetic member 132, so as to drive the blocking member 120 to rotate around the air inlet member 110 (for example, the blocking member 120 may rotate around the air inlet member 110 counterclockwise), and further separate the blocking member 120 from the process gas channel 111, so as to open the process gas channel 111, and at this time, the relative positions and the connection relationship between the parts of the air inlet integrated structure 100 may be as shown in fig. 2.
The air inlet integrated structure 100 of the structure of the embodiment comprises an air inlet part 110, a blocking part 120 and a magnetic component 130. Wherein the gas inlet piece 110 is provided with a process gas channel 111, and the blocking piece 120 is rotatably connected with the gas inlet piece 110. The magnetic assembly 130 includes a first magnetic member 131 and a second magnetic member 132, the first magnetic member 131 is connected to the blocking member 120, and the second magnetic member 132 is connected to the air inlet 110. One of the first and second magnetic members 131 and 132 has a variable magnetic pole to generate a magnetic force having a different direction between the first and second magnetic members 131 and 132, which can drive the blocking member 120 to rotate so that the blocking member 120 blocks or opens the process gas channel 111. Therefore, the gas inlet integrated structure 100 of the present embodiment can realize automatic blocking or automatic opening of the process gas channel 111 by using the magnetic force between the magnetic assemblies 130, which not only improves the automation degree of the equipment, but also effectively improves the cleanliness of the process gas channel 111, and can prevent external particle impurities from entering the process chamber through the process gas channel 111, thereby eliminating the influence of human factors on the analysis of the particle problems, reducing the labor intensity of the workers, and improving the economic benefits.
As shown in fig. 1, 2, 5 and 6, the first magnetic member 131 may be a permanent magnet, and the second magnetic member 132 may be an electromagnet, and it is understood that the electromagnet has opposite polarities when a forward direct current and a reverse direct current are applied. Therefore, the feature of the electromagnet can be utilized to drive the blocking piece 120 to rotate, so as to block or open the process gas channel 111, and the structure is simple. In addition, the first magnetic member 131 may be an electromagnet, and the second magnetic member 132 may be a permanent magnet. Alternatively, the first magnetic member 131 and the second magnetic member 132 may be both electromagnets or the like.
The shape of the electromagnet may be a rectangle with a right angle or a circular arc with a circular ring with a right angle, and it should be understood that the included angle between the two end faces formed by the electromagnet should be the same as the opening and closing angle of the plugging piece 120, and the material constituting the electromagnet may be silicon steel. Specifically, as shown in fig. 6, the electromagnet includes an electromagnet main body 132a and a first electromagnet portion 132b and a second electromagnet portion 132c respectively located at two ends of the electromagnet main body 132a, an included angle between the first electromagnet portion 132b and the second electromagnet portion 132c is the same as an opening and closing angle of the blocking piece 120, and the opening and closing angle is a rotation angle at which the blocking piece 120 rotates from the blocking position to the opening position. As shown in fig. 6, the winding direction of the first electromagnetic part 132b is opposite to the winding direction of the second electromagnetic part 132c, for example, the winding direction of the first electromagnetic part 132b may be clockwise, and the winding direction of the second electromagnetic part 132c may be counterclockwise. Of course, the winding direction of the first electromagnetic part 132b may be counterclockwise, and the winding direction of the second electromagnetic part 132c may be clockwise.
As shown in fig. 5, the permanent magnets include a first permanent magnet 131a and a second permanent magnet 131b, the first permanent magnet 131a is disposed opposite to the first electromagnet portion 132b, the second permanent magnet 131b is disposed opposite to the second electromagnet portion 132c, and one ends of the first permanent magnet 131a and the second permanent magnet 131b having the same magnetism are fixed together, for example, the N pole of the first permanent magnet 131a and the N pole of the second permanent magnet 131b are fixed together. Of course, the south pole of the first permanent magnet 131a and the south pole of the second permanent magnet 131b may be fixed to each other. The first permanent magnet 131a and the second permanent magnet 131b may be fixed by adhesion or screwing, and preferably, the first permanent magnet 131a and the second permanent magnet 131b are fixed by adhesion. As shown in fig. 5, screw holes 131c are provided in the non-contact surfaces of the first and second permanent magnets 131a and 131b, so that the first and second permanent magnets 131a and 131b can be fixed to the closing member 120 by screws.
For a more vivid description of the process, it is assumed that the N pole of the first permanent magnet 131a and the N pole of the second permanent magnet 131b are adhered together, and the two outward poles are S poles, as shown in fig. 1, 2, 5 and 6. When the winding of the coil 132d of the first electromagnetic portion 132b of the electromagnet is clockwise and the direction of the current is also clockwise, the polarity of the first electromagnetic portion 132b is N-pole. When the winding of the coil 132d of the second electromagnetic portion 132c of the electromagnet is counterclockwise, the polarity of the second electromagnetic portion 132c is S-pole. At this time, the S pole of the first permanent magnet 131a is attracted by the first electromagnetic part 132b of the electromagnet, and the S pole of the second permanent magnet 131b is repelled by the second electromagnetic part 132c of the electromagnet, so that the blocking piece 120 can be driven to rotate clockwise around the air inlet 110, and the blocking piece 120 can block the process gas channel 111, that is, the blocking piece 120 is in a closed state, as shown in fig. 1. On the contrary, when the current direction of the electromagnet is changed from clockwise to counterclockwise, the magnetism of the first electromagnetic part 132b of the electromagnet is changed from N-pole to S-pole, and the magnetism of the second electromagnetic part 132c of the electromagnet is changed from S-pole to N-pole, at this time, the S-pole of the first permanent magnet 131a receives the repulsive force of the first electromagnetic part 132b, and the S-pole of the second permanent magnet 131b receives the attractive force of the second electromagnetic part 132c, the blocking piece 120 can be driven to rotate around the air inlet piece 120 counterclockwise, so that the blocking piece 120 can be separated from the process gas channel 111, that is, the blocking piece 120 is in an open state at this time, as shown in fig. 2.
As shown in fig. 1 and 3, the air inlet 110 is provided with a groove 112 for receiving the second magnetic member 132.
As shown in fig. 3 and 4 (fig. 4a to 4c), at least one first rotating portion 121 is provided on the blocking member 120, and at least one second rotating portion 113 is provided on the air inlet member 110. And, the first rotating portion 121 is engaged with the corresponding second rotating portion 113 to rotate the blocking piece 120 with respect to the gas inlet piece 110, so that the blocking piece 120 blocks or opens the process gas passage 111.
Specifically, as shown in fig. 3 and 4, the first rotating part 121 may be a hole structure, and the second rotating part 113 may be a pin structure, which is inserted into the hole structure. Of course, the first rotating portion 121 may have a pin structure, the second rotating portion 113 may have a hole structure, and the like.
Specifically, as shown in fig. 3 and 4, the blocking piece 120 is symmetrically provided with two first rotating portions 121, and the air intake piece 110 is symmetrically provided with two second rotating portions 113. Of course, the specific number of the first rotating portion 121 and the second rotating portion 113 may be determined according to actual needs when applied.
In a second aspect of the present invention, as shown in fig. 7 and 8, a process chamber 200 is provided, the process chamber 200 includes a chamber body 210, a top cover 220 covering the chamber body 210, and a gas inlet integrated structure 100 interposed between the top cover 220 and the chamber body 210, the gas inlet integrated structure 100 employs the gas inlet integrated structure 100 described above, and a process gas channel 111 in the gas inlet member 110 can selectively communicate a gas inlet hole (not shown) on the top cover 220 with the inside of the chamber body 210.
The process chamber 200 of the present embodiment has the gas inlet assembly 100 described above, which includes the gas inlet 110, the blocking member 120, and the magnetic assembly 130. Wherein the gas inlet piece 110 is provided with a process gas channel 111, and the blocking piece 120 is rotatably connected with the gas inlet piece 110. The magnetic assembly 130 includes a first magnetic member 131 and a second magnetic member 132, the first magnetic member 131 is connected to the blocking member 120, and the second magnetic member 132 is connected to the air inlet 110. One of the first and second magnetic members 131 and 132 has a variable magnetic pole to generate a magnetic force having a different direction between the first and second magnetic members 131 and 132, which can drive the blocking member 120 to rotate so that the blocking member 120 blocks or opens the process gas channel 111. Therefore, the process chamber 200 of the present embodiment can realize automatic blocking or automatic opening of the process gas channel 111 by using the magnetic force between the magnetic assemblies 130, which not only improves the automation degree of the equipment, but also effectively improves the cleanliness of the process gas channel 111, and can prevent external particle impurities from entering the process chamber through the process gas channel 111, thereby eliminating the influence of human factors on the analysis of the particle problems, reducing the labor intensity of workers, and improving the economic benefits.
As shown in fig. 7 and 8, the process chamber 200 further includes a current reversing switching member 230, and the current reversing switching member 230 is electrically connected to a coil wound on the electromagnet to switch a direction of current in the coil.
Specifically, as shown in fig. 7 and 8, the current diverting switching member 230 is disposed on the chamber body 210 on the side of the top cover 220, and when the top cover 220 is opened, the top cover 220 can abut against the current diverting switching member 230, and when the top cover 220 is closed, the top cover 220 is separated from the current diverting switching member 230.
For convenience of description, the N pole of the first permanent magnet 131a and the N pole of the second permanent magnet 131b are bonded together, and both outward poles are S poles. The coil 132d of the first electromagnet portion 132b is wound clockwise and the coil 132d of the second electromagnet portion 132c is wound counterclockwise. As shown in fig. 7, when the top cover 220 is closed, the top cover 220 is separated from the current reversing switch 230, and at this time, as shown in fig. 9, the current direction in the electromagnet is counterclockwise, according to the right-hand rule, the first electromagnetic part 132b is S-pole, and the second electromagnetic part 132c is N-pole, so that the magnetic force between the electromagnet and the permanent magnet can drive the blocking piece 120 to rotate counterclockwise around the air inlet piece 110, thereby separating the blocking piece 120 from the process gas channel 111. On the contrary, as shown in fig. 8, when the top cover 220 is opened, the top cover 220 abuts against the current reversing switch 230, that is, the top cover 220 presses the current reversing switch 230, at this time, as shown in fig. 10, the direction of the current flowing through the electromagnet is changed from counterclockwise to clockwise, according to the right-hand rule, the first electromagnetic part 132b is N-pole, and the second electromagnetic part 132c is S-pole, so that the magnetic force between the electromagnet and the permanent magnet can drive the plugging member 120 to rotate clockwise around the air inlet member 110, thereby enabling the plugging member 120 to plug the process gas channel 111.
In a third aspect of the present invention, a semiconductor processing apparatus (not shown) is provided, which includes the process chamber 200 described above, and the detailed structure of the process chamber 200 can be found in the description above and in the drawings, and will not be described herein again.
The semiconductor processing apparatus of the present embodiment has the process chamber 200 as described above, and the process chamber 200 has the integrated gas inlet structure 100 as described above, which includes the gas inlet 110, the blocking member 120 and the magnetic assembly 130. Wherein the gas inlet piece 110 is provided with a process gas channel 111, and the blocking piece 120 is rotatably connected with the gas inlet piece 110. The magnetic assembly 130 includes a first magnetic member 131 and a second magnetic member 132, the first magnetic member 131 is connected to the blocking member 120, and the second magnetic member 132 is connected to the air inlet 110. One of the first and second magnetic members 131 and 132 has a variable magnetic pole to generate a magnetic force having a different direction between the first and second magnetic members 131 and 132, which can drive the blocking member 120 to rotate so that the blocking member 120 blocks or opens the process gas channel 111. Therefore, the semiconductor processing equipment with the structure of the embodiment can realize automatic blocking or automatic opening of the process gas channel 111 by utilizing the magnetic force between the magnetic assemblies 130, not only can improve the automation degree of the equipment, but also can effectively improve the cleanliness of the process gas channel 111, can prevent external particle impurities from entering the process chamber through the process gas channel 111, eliminates the analysis that the particle problems are influenced by human factors, reduces the labor intensity of workers, and improves the economic benefit.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.

Claims (10)

1. The utility model provides a process chamber, includes that cavity body, lid establish top cap on the cavity body, press from both sides and establish the integrated configuration and the current reversing switch spare of admitting air between top cap and the cavity body, its characterized in that, the integrated configuration that admits air includes:
the gas inlet part is provided with a process gas channel which can selectively communicate the gas inlet hole on the top cover with the interior of the chamber body so as to provide process gas into the process chamber;
the blocking piece is rotatably connected with the air inlet piece;
the magnetic assembly comprises a first magnetic part and a second magnetic part, the first magnetic part is connected with the blocking part, and the second magnetic part is connected with the air inlet part; and the number of the first and second electrodes,
the magnetic pole of one of the first magnetic part and the second magnetic part is changeable so as to generate magnetic force with different directions between the first magnetic part and the second magnetic part, and the magnetic force can drive the blocking part to rotate so that the blocking part blocks or opens the process gas channel;
the first magnetic part or the second magnetic part with changeable magnetic poles is an electromagnet, the current reversing switch part is electrically connected with a coil wound on the electromagnet to switch the direction of current in the coil, when the top cover is opened, the top cover can be abutted to the current reversing switch part, and when the top cover is closed, the top cover is separated from the current reversing switch part.
2. The process chamber of claim 1, wherein the first magnetic member is a permanent magnet and the second magnetic member is an electromagnet.
3. The process chamber of claim 2, wherein the electromagnet comprises an electromagnet body and a first electromagnet portion and a second electromagnet portion respectively located at two ends of the electromagnet body, and a winding direction of the first electromagnet portion is opposite to a winding direction of the second electromagnet portion.
4. The process chamber of claim 3, wherein the permanent magnet comprises a first permanent magnet and a second permanent magnet, the first permanent magnet is disposed opposite the first electromagnet portion, the second permanent magnet is disposed opposite the second electromagnet portion, and ends of the first permanent magnet and the second permanent magnet having the same magnetic properties are fixed together.
5. The process chamber of any one of claims 1 to 4, wherein the gas inlet is provided with a recess for receiving the second magnetic member.
6. The process chamber of any of claims 1 to 4, wherein the block piece is provided with at least one first rotating portion and the gas inlet piece is provided with at least one second rotating portion; and the number of the first and second electrodes,
the first rotating part is matched with the corresponding second rotating part, so that the plugging piece rotates relative to the air inlet piece, and the plugging piece plugs or opens the process gas channel.
7. The process chamber of claim 6, wherein the first rotating portion is a hole structure and the second rotating portion is a pin structure inserted in the hole structure.
8. The process chamber of claim 6, wherein the blocking member is symmetrically provided with two first rotating portions, and the gas inlet member is symmetrically provided with two second rotating portions.
9. The process chamber of claim 1, wherein the current diverting switch is disposed on the chamber body on a side of the lid.
10. A semiconductor processing apparatus comprising the process chamber of any of claims 1-9.
CN201811267482.1A 2018-10-29 2018-10-29 Gas inlet integrated structure, process chamber and semiconductor processing equipment Active CN111101110B (en)

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