CN111092099A - Organic light emitting diode display device - Google Patents
Organic light emitting diode display device Download PDFInfo
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- CN111092099A CN111092099A CN201811234227.7A CN201811234227A CN111092099A CN 111092099 A CN111092099 A CN 111092099A CN 201811234227 A CN201811234227 A CN 201811234227A CN 111092099 A CN111092099 A CN 111092099A
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- 239000010410 layer Substances 0.000 claims abstract description 139
- 239000004065 semiconductor Substances 0.000 claims abstract description 59
- 239000011241 protective layer Substances 0.000 claims abstract description 50
- 239000012044 organic layer Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000002161 passivation Methods 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 abstract description 23
- 239000011159 matrix material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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Abstract
An organic light emitting diode display device includes a substrate, a first gate electrode, a first insulating layer, a semiconductor layer, a source electrode, a drain electrode, an organic protective layer, a cathode electrode, an organic layer, and an anode electrode. The first gate electrode is disposed on the substrate. The first insulating layer is arranged on the substrate and covers the first gate electrode. The semiconductor layer is disposed on the first insulating layer. The source electrode and the drain electrode are respectively arranged on the semiconductor layer, wherein the semiconductor layer is provided with an exposed part exposed out of the source electrode and the drain electrode, and the orthographic projection of the exposed part on the substrate is at least partially overlapped with the first grid electrode. The organic protective layer covers the source electrode, the drain electrode and the semiconductor layer. The cathode electrode is arranged on the organic protective layer. The organic layer is disposed on the cathode electrode. The anode electrode is disposed on the organic layer. The organic light emitting diode display device can effectively reduce the influence of the cathode electrode and the anode electrode on the thin film transistor.
Description
Technical Field
The invention relates to an organic light emitting diode display device.
Background
An Organic Light Emitting Diode (OLED) is a Light Emitting element using a Light Emitting Organic compound, and has self-Light Emitting characteristics, and is thinner, higher in Display quality, and better in power saving characteristics than a Liquid Crystal Display (LCD). The organic light emitting diode has the characteristics of wide viewing angle, high reaction speed, ultra-thin and the like, so that the application range of the organic light emitting diode panel is wider and wider.
The oled panel is driven by the cathode electrode and the anode electrode, and the peripheral thin film transistors may be affected by the voltage variation of the cathode electrode and the anode electrode, thereby causing complexity and instability in controlling the thin film transistors.
Disclosure of Invention
In one aspect, the present invention provides an organic light emitting diode display device to effectively reduce the influence of a cathode electrode and an anode electrode on a thin film transistor.
According to an embodiment of the present invention, an organic light emitting diode display device includes a substrate, a first gate electrode, a first insulating layer, a semiconductor layer, a source electrode, a drain electrode, an organic protective layer, a cathode electrode, an organic layer, and an anode electrode. The first gate electrode is disposed on the substrate. The first insulating layer is arranged on the substrate and covers the first gate electrode. The semiconductor layer is disposed on the first insulating layer. The source electrode and the drain electrode are respectively arranged on the semiconductor layer, wherein the semiconductor layer is provided with an exposed part exposed out of the source electrode and the drain electrode, and the orthographic projection of the exposed part on the substrate is at least partially overlapped with the first grid electrode. The organic protective layer covers the source electrode, the drain electrode and the semiconductor layer. The cathode electrode is arranged on the organic protective layer. The organic layer is disposed on the cathode electrode. The anode electrode is disposed on the organic layer.
In one or more embodiments of the present invention, the thickness of the organic passivation layer is about 2 to 3 μm.
In one or more embodiments of the present invention, the oled display device further includes an inorganic protective layer. The inorganic protective layer is arranged between the organic protective layer and the source electrode, between the drain electrode and between the organic protective layer and the semiconductor layer, and covers the source electrode, the drain electrode and the semiconductor layer.
In one or more embodiments of the present invention, the organic light emitting diode display device further includes a second gate electrode. The second grid electrode is arranged between the inorganic protective layer and the organic protective layer, wherein the orthographic projection of the second grid electrode on the semiconductor layer is at least partially overlapped with the exposed part.
In one or more embodiments of the present invention, the oled display device further includes a shielding layer and a second insulating layer. The shielding layer is arranged between the organic protective layer and the cathode electrode, wherein the shielding layer is made of a conductive material and has a fixed potential. The second insulating layer is arranged between the cathode electrode and the shielding layer.
According to another embodiment of the present invention, an organic light emitting diode display device includes a substrate, a first gate electrode, a first insulating layer, a semiconductor layer, a source electrode, a drain electrode, an organic protective layer, an anode electrode, an organic layer, and a cathode electrode. The first gate electrode is disposed on the substrate. The first insulating layer is arranged on the substrate and covers the first gate electrode. The semiconductor layer is disposed on the first insulating layer. The source electrode and the drain electrode are respectively arranged on the semiconductor layer, wherein the semiconductor layer is provided with an exposed part exposed out of the source electrode and the drain electrode, and the orthographic projection of the exposed part on the substrate is at least partially overlapped with the first grid electrode. The organic protective layer covers the source electrode, the drain electrode and the semiconductor layer. The anode electrode is arranged on the organic protective layer, wherein the anode electrode is provided with an opening exposing the organic protective layer, and the orthographic projection of the opening on the semiconductor layer is at least partially overlapped with the exposed part. The organic layer is disposed on the anode electrode. The cathode electrode is disposed on the organic layer.
In one or more embodiments of the present invention, the oled display device further includes a shielding layer and a second insulating layer. The shielding layer is arranged between the organic protective layer and the anode electrode, wherein the shielding layer is made of a conductive material and has a fixed potential. The second insulating layer is arranged between the anode electrode and the shielding layer.
In the above embodiment of the present invention, the anode electrode is disposed on the organic layer, and the cathode electrode is disposed below the organic layer, because the potential of the cathode electrode is the common potential of each pixel, the potential of the cathode electrode is fixed, and thus the thin film transistor is not easily affected, and the anode electrode is disposed on the organic layer and is far away from the thin film transistor, and thus the anode electrode is also not easily affected. Therefore, the organic light emitting diode display device can effectively reduce the influence of the cathode electrode and the anode electrode on the thin film transistor.
Drawings
FIG. 1 is a schematic top view illustrating an OLED display device according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view of an OLED display device according to an embodiment of the present invention, the cross-sectional view being taken along line 2 of FIG. 1;
FIG. 3 is a schematic cross-sectional view of an OLED display device according to another embodiment of the present invention, the cross-sectional view being taken along line 2 of FIG. 1;
FIG. 4 is a cross-sectional view of an OLED display device according to yet another embodiment of the present invention, the cross-sectional view being taken along line 2 of FIG. 1;
FIG. 5 is a cross-sectional view of an OLED display device according to still another embodiment of the present invention, the cross-sectional view being taken along line 2 of FIG. 1;
FIG. 6 is a cross-sectional view of an OLED display device according to still another embodiment of the present invention, the cross-sectional view being taken along line 2 of FIG. 1;
FIG. 7 is a cross-sectional view of an OLED display device according to still another embodiment of the present invention, the cross-sectional view being taken along line 2 of FIG. 1.
Detailed Description
In the following description, for purposes of explanation, numerous implementation details are set forth in order to provide a thorough understanding of the various embodiments of the present invention. It should be understood, however, that these implementation details are not to be interpreted as limiting the invention. That is, in some embodiments of the invention, such implementation details are not necessary. In addition, for the sake of simplicity, some conventional structures and elements are shown in the drawings in a simple schematic manner.
Fig. 1 is a schematic top view illustrating an oled display device 100 according to an embodiment of the invention. Various embodiments of the present invention provide an organic light emitting diode display device 100. Specifically, the organic light emitting diode display device 100 is a top emission type organic light emitting diode display device.
As shown in fig. 1, the oled display device 100 includes a plurality of power lines 111 and 112, a plurality of scan lines 113, a plurality of data lines 114, a plurality of tfts 120 and 130, and a plurality of anode electrodes 151. The power lines 111, 112, the scan lines 113, and the data lines 114 are arranged to form a plurality of matrix units, wherein the tfts 120, 130 and the anode electrodes 151 are respectively disposed in the matrix units to form a plurality of pixels. In order to increase the aperture ratio (light emitting area) of the pixel, the anode electrode 151 is generally spread over the entire matrix unit, and thus covers the thin film transistor 130.
Fig. 2 is a schematic cross-sectional view of an oled display device 100 according to an embodiment of the invention, the cross-sectional view being taken along line 2 of fig. 1. As shown in fig. 2, the oled display device 100 further includes a substrate 150, an organic layer 152, a cathode electrode 153 and an organic protection layer 154. The thin film transistor 130 includes a first gate electrode 131, a first insulating layer 132, a semiconductor layer 133, a source electrode 134, and a drain electrode 135. The first gate electrode 131 is disposed on the substrate 150. The first insulating layer 132 is disposed on the substrate 150 and covers the first gate electrode 131. The semiconductor layer 133 is disposed on the first insulating layer 132. The source electrode 134 and the drain electrode 135 are respectively disposed on the semiconductor layer 133, wherein the semiconductor layer 133 has an exposed portion 133e exposed on the source electrode 134 and the drain electrode 135, and an orthographic projection of the exposed portion 133e on the substrate 150 at least partially overlaps the first gate electrode 131. The organic protective layer 154 covers the source electrode 134, the drain electrode 135, and the semiconductor layer 133. The cathode electrode 153 is disposed on the organic protective layer 154. The organic layer 152 is disposed on the cathode electrode 153. The anode electrode 151 is disposed on the organic layer 152.
Since the cathode 153 and the anode 151 are disposed on the tft 130, the voltage variation of the cathode 153 and the anode 151 may affect the operation of the tft 130 (especially, the channel of the semiconductor layer 133), thereby causing complexity and instability in the control of the tft 130.
By disposing the anode electrode 151 on the organic layer 152 and the cathode electrode 153 under the organic layer 152, the potential of the cathode electrode 153 is a common potential of each pixel, so that the potential of the cathode electrode 153 is constant and is not likely to affect the tft 130, and the anode electrode 151 is disposed on the organic layer 152 and is far away from the tft 130, so that the anode electrode 151 is also not likely to affect the tft 130. Accordingly, the oled display device 100 can effectively reduce the influence that the cathode electrode 153 and the anode electrode 151 may have on the tft 130.
Specifically, the thin film transistor 130 further includes an inorganic protective layer 137. The inorganic protective layer 137 is provided between the organic protective layer 154 and the source electrode 134, the drain electrode 135, and the semiconductor layer 133, and covers the source electrode 134, the drain electrode 135, and the semiconductor layer 133.
Since the source electrode 134, the drain electrode 135 and the semiconductor layer 133, and the cathode electrode 153 and the anode electrode 151 are separated by the organic protective layer 154 and the inorganic protective layer 137, the effective dielectric constant between the source electrode 134, the drain electrode 135 and the semiconductor layer 133, and between the cathode electrode 153 and the anode electrode 151 can be reduced, thereby effectively reducing the influence that the cathode electrode 153 and the anode electrode 151 may have on the thin film transistor 130.
Specifically, the organic protective layer 154 has a thickness of about 2 to 3 micrometers. It should be understood that the above-mentioned thickness of the organic protection layer 154 is only exemplary and not intended to limit the present invention, and those skilled in the art can flexibly select the thickness of the organic protection layer 154 according to the actual requirement.
Specifically, the semiconductor layer 133 includes an active layer 133a and an ohmic contact layer 133 b. The active layer 133a is disposed on the first insulating layer 132, and the ohmic contact layer 133b is disposed on the active layer 133 a. The exposed portion 133e is a portion of the active layer 133 a. More specifically, the active layer 133a may be amorphous silicon.
Fig. 3 is a schematic cross-sectional view of an oled display device 100 according to another embodiment of the invention, the cross-sectional view being taken along line 2 of fig. 1. The organic light emitting diode display device 100 of the present embodiment is substantially the same as the organic light emitting diode display device 100 of the previous embodiment, and the differences thereof will be mainly described below.
As shown in fig. 3, the oled display device 100 further includes a shielding layer 156 and a second insulating layer 157, and the thin film transistor 130 has no inorganic protective layer 137. The shielding layer 156 is disposed between the organic passivation layer 154 and the cathode electrode 153, wherein the shielding layer 156 is made of a conductive material, and the shielding layer 156 has a fixed potential. The second insulating layer 157 is disposed between the cathode electrode 153 and the shielding layer 156. The shielding effect generated by the shielding layer 156 can further reduce the influence that the cathode electrode 153 and the anode electrode 151 may have on the thin film transistor 130.
Fig. 4 is a schematic cross-sectional view of an oled display device 100 according to another embodiment of the invention, the cross-sectional view being taken along line 2 of fig. 1. The organic light emitting diode display device 100 of the present embodiment is substantially the same as the organic light emitting diode display device 100 of fig. 2, and the differences thereof will be mainly described below.
As shown in fig. 4, the thin film transistor 130 further includes a second gate electrode 136. The second gate electrode 136 is disposed between the inorganic protective layer 137 and the organic protective layer 154, wherein an orthographic projection of the second gate electrode 136 on the semiconductor layer 133 at least partially overlaps the exposed portion 133 e. By providing the second gate electrode 136, the first gate electrode 131 and the second gate electrode 136 can control the channel of the semiconductor layer 133 together, thereby further increasing the control capability of the thin film transistor 130.
Fig. 5 is a schematic cross-sectional view of an oled display device 100 according to still another embodiment of the invention, the cross-sectional view being taken along line 2 of fig. 1. As shown in fig. 5, the oled display device 100 further includes a substrate 150, an organic layer 152, a cathode electrode 153 and an organic protection layer 154. The transistor 130 includes a first gate electrode 131, a first insulating layer 132, a semiconductor layer 133, a source electrode 134, and a drain electrode 135. The first gate electrode 131 is disposed on the substrate 150. The first insulating layer 132 is disposed on the substrate 150 and covers the first gate electrode 131. The semiconductor layer 133 is disposed on the first insulating layer 132. The source electrode 134 and the drain electrode 135 are respectively disposed on the semiconductor layer 133, wherein the semiconductor layer 133 has an exposed portion 133e exposed on the source electrode 134 and the drain electrode 135, and an orthographic projection of the exposed portion 133e on the substrate 150 at least partially overlaps the first gate electrode 131. The organic protective layer 154 covers the source electrode 134, the drain electrode 135, and the semiconductor layer 133. The anode electrode 151 is disposed on the organic protection layer 154, wherein the anode electrode 151 has an opening 151p exposing the organic protection layer 154, and an orthographic projection of the opening 151p on the semiconductor layer 133 at least partially overlaps the exposed portion 133 e. The organic layer 152 is disposed on the anode electrode 151. The cathode electrode 153 is disposed on the organic layer 152.
By disposing the opening 151p of the anode electrode 151 above the exposed portion 133e of the semiconductor layer 133, the influence of the anode electrode 151 on the channel of the semiconductor layer 133 can be effectively reduced, thereby increasing the control capability of the thin film transistor 130.
Specifically, the thin film transistor 130 further includes an inorganic protective layer 137. The inorganic protective layer 137 is provided between the organic protective layer 154 and the source electrode 134, the drain electrode 135, and the semiconductor layer 133, and covers the source electrode 134, the drain electrode 135, and the semiconductor layer 133.
Specifically, the organic protective layer 154 has a thickness of about 2 to 3 micrometers. It should be understood that the above-mentioned thickness of the organic protection layer 154 is only exemplary and not intended to limit the present invention, and those skilled in the art can flexibly select the thickness of the organic protection layer 154 according to the actual requirement.
Fig. 6 is a schematic cross-sectional view of an oled display device 100 according to another embodiment of the invention, the cross-sectional view being taken along line 2 of fig. 1. The organic light emitting diode display device 100 of the present embodiment is substantially the same as the organic light emitting diode display device 100 of fig. 5, and the differences thereof will be mainly described below.
As shown in fig. 6, the oled display device 100 further includes a shielding layer 156 and a second insulating layer 157, and the oled display device 100 does not have the inorganic protection layer 137. The shielding layer 156 is disposed between the organic passivation layer 154 and the anode electrode 151, wherein the shielding layer 156 is made of a conductive material, and the shielding layer 156 has a fixed potential. The second insulating layer 157 is disposed between the anode electrode 151 and the shielding layer 156. The shielding effect generated by the shielding layer 156 can further reduce the influence that the cathode electrode 153 and the anode electrode 151 may have on the thin film transistor 130.
FIG. 7 is a cross-sectional view of an OLED display device 100 according to still another embodiment of the present invention, the cross-sectional view being taken along line 2 of FIG. 1. The organic light emitting diode display device 100 of the present embodiment is substantially the same as the organic light emitting diode display device 100 of fig. 5, and the differences thereof will be mainly described below.
As shown in fig. 7, the thin film transistor 130 further includes a second gate electrode 136. The second gate electrode 136 is disposed between the inorganic protective layer 137 and the organic protective layer 154, wherein an orthographic projection of the second gate electrode 136 on the semiconductor layer 133 at least partially overlaps the exposed portion 133 e. By providing the second gate electrode 136, the first gate electrode 131 and the second gate electrode 136 can control the channel of the semiconductor layer 133 together, thereby further increasing the control capability of the thin film transistor 130.
In the above embodiment of the present invention, the anode electrode 151 is disposed on the organic layer 152, and the cathode electrode 153 is disposed below the organic layer 152, because the potential of the cathode electrode 153 is the common potential of each pixel, the potential of the cathode electrode 153 is constant, and thus the thin film transistor 130 is not easily affected, and the anode electrode 151 is disposed on the organic layer 152 and is far away from the thin film transistor 130, so the anode electrode 151 is also not easily affected on the thin film transistor 130. Accordingly, the oled display device 100 can effectively reduce the influence that the cathode electrode 153 and the anode electrode 151 may have on the tft 130.
Although the present invention has been described with reference to the above embodiments, it should be understood that various changes and modifications can be made therein by those skilled in the art without departing from the spirit and scope of the invention.
Claims (10)
1. An organic light emitting diode display device, comprising:
a substrate;
a first gate electrode disposed on the substrate;
a first insulating layer disposed on the substrate and covering the first gate electrode;
a semiconductor layer disposed on the first insulating layer;
a source electrode and a drain electrode respectively disposed on the semiconductor layer, wherein the semiconductor layer has an exposed portion exposed from the source electrode and the drain electrode, and an orthographic projection of the exposed portion on the substrate at least partially overlaps the first gate electrode;
an organic protective layer covering the source electrode, the drain electrode and the semiconductor layer;
a cathode electrode disposed on the organic passivation layer;
an organic layer disposed on the cathode electrode; and
an anode electrode disposed on the organic layer.
2. The oled display device claimed in claim 1, wherein the organic passivation layer has a thickness of 2 to 3 μm.
3. The organic light emitting diode display device of claim 1, further comprising:
and the inorganic protective layer is arranged between the organic protective layer and the source electrode, between the drain electrode and between the organic protective layer and the semiconductor layer, and covers the source electrode, the drain electrode and the semiconductor layer.
4. The organic light emitting diode display device of claim 3, further comprising:
and a second gate electrode disposed between the inorganic protective layer and the organic protective layer, wherein an orthographic projection of the second gate electrode on the semiconductor layer is at least partially overlapped with the exposed portion.
5. The organic light emitting diode display device of claim 1, further comprising:
a shielding layer arranged between the organic protective layer and the cathode electrode, wherein the shielding layer is made of conductive material and has a fixed potential; and
a second insulating layer disposed between the cathode electrode and the shielding layer.
6. An organic light emitting diode display device, comprising:
a substrate;
a first gate electrode disposed on the substrate;
a first insulating layer disposed on the substrate and covering the first gate electrode;
a semiconductor layer disposed on the first insulating layer;
a source electrode and a drain electrode respectively disposed on the semiconductor layer, wherein the semiconductor layer has an exposed portion exposed from the source electrode and the drain electrode, and an orthographic projection of the exposed portion on the substrate at least partially overlaps the first gate electrode;
an organic protective layer covering the source electrode, the drain electrode and the semiconductor layer;
an anode electrode disposed on the organic passivation layer, wherein the anode electrode has an opening exposing the organic passivation layer, and an orthographic projection of the opening on the semiconductor layer is at least partially overlapped with the exposed portion;
an organic layer disposed on the anode electrode; and
a cathode electrode disposed on the organic layer.
7. The OLED display device of claim 6, wherein the organic passivation layer has a thickness of 2-3 μm.
8. The organic light emitting diode display device of claim 6, further comprising:
and the inorganic protective layer is arranged between the organic protective layer and the source electrode, between the drain electrode and between the organic protective layer and the semiconductor layer, and covers the source electrode, the drain electrode and the semiconductor layer.
9. The organic light emitting diode display device of claim 8, further comprising:
and a second gate electrode disposed between the inorganic protective layer and the organic protective layer, wherein an orthographic projection of the second gate electrode on the semiconductor layer is at least partially overlapped with the exposed portion.
10. The organic light emitting diode display device of claim 6, further comprising:
a shielding layer arranged between the organic protective layer and the anode electrode, wherein the shielding layer is made of conductive material and has a fixed potential; and
a second insulating layer disposed between the anode electrode and the shielding layer.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811234227.7A CN111092099A (en) | 2018-10-23 | 2018-10-23 | Organic light emitting diode display device |
| TW108119779A TWI724431B (en) | 2018-10-23 | 2019-06-06 | Organic light-emitting diode display device |
| TW108207255U TWM586878U (en) | 2018-10-23 | 2019-06-06 | Organic light-emitting diode display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811234227.7A CN111092099A (en) | 2018-10-23 | 2018-10-23 | Organic light emitting diode display device |
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| CN111092099A true CN111092099A (en) | 2020-05-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201811234227.7A Pending CN111092099A (en) | 2018-10-23 | 2018-10-23 | Organic light emitting diode display device |
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| TW (2) | TWI724431B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111092099A (en) * | 2018-10-23 | 2020-05-01 | 宸鸿光电科技股份有限公司 | Organic light emitting diode display device |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001043980A (en) * | 1999-07-29 | 2001-02-16 | Sony Corp | Organic electroluminescent element and display device |
| JP2003271076A (en) * | 2002-03-19 | 2003-09-25 | Toshiba Corp | Display device |
| US20040130516A1 (en) * | 2001-02-16 | 2004-07-08 | Arokia Nathan | Organic light emitting diode display having shield electrodes |
| US20040135148A1 (en) * | 2003-01-10 | 2004-07-15 | Chiao-Ju Lin | [top emission active matrix oled and fabricating method thereof] |
| KR20070081250A (en) * | 2006-02-10 | 2007-08-16 | 삼성전자주식회사 | Organic electro-luminescent display and fabrication method thereof |
| CN102760750A (en) * | 2012-07-27 | 2012-10-31 | 南京中电熊猫液晶显示科技有限公司 | Organic light emitting diode (OLED) metal oxide and preparation method thereof |
| CN102779830A (en) * | 2012-06-12 | 2012-11-14 | 南京中电熊猫液晶显示科技有限公司 | Metallic oxide display device and manufacturing method thereof |
| CN106558593A (en) * | 2015-09-18 | 2017-04-05 | 鸿富锦精密工业（深圳）有限公司 | The preparation method of array base palte, display floater, display device and array base palte |
| CN106952940A (en) * | 2017-05-26 | 2017-07-14 | 上海天马有机发光显示技术有限公司 | A kind of organic electroluminescence display panel and organic light-emitting display device |
| CN108010944A (en) * | 2017-11-28 | 2018-05-08 | 武汉天马微电子有限公司 | Array substrate and display device |
| US20180151120A1 (en) * | 2016-11-30 | 2018-05-31 | Lg Display Co., Ltd. | Organic Light Emitting Display |
| CN108630819A (en) * | 2017-03-21 | 2018-10-09 | 宸鸿光电科技股份有限公司 | Organic LED display device |
| CN208954991U (en) * | 2018-10-23 | 2019-06-07 | 宸鸿光电科技股份有限公司 | Organic LED display device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101080354B1 (en) * | 2004-08-12 | 2011-11-04 | 삼성전자주식회사 | Thin film transistor array panel and manufacturing method thereof |
| TWI272869B (en) * | 2005-11-15 | 2007-02-01 | Au Optronics Corp | Active illumination device and display apparatus |
| KR20120077470A (en) * | 2010-12-30 | 2012-07-10 | 삼성모바일디스플레이주식회사 | Organic light emitting diode display and fabricating method of the same |
| CN103337500B (en) * | 2013-05-24 | 2015-12-23 | 友达光电股份有限公司 | Active component array base board and manufacture method thereof |
| KR102080296B1 (en) * | 2013-12-03 | 2020-02-21 | 엘지디스플레이 주식회사 | Organic light emitting device |
| KR102369858B1 (en) * | 2015-06-29 | 2022-03-07 | 삼성디스플레이 주식회사 | Display apparatus |
| CN106328825B (en) * | 2016-10-31 | 2019-01-15 | 武汉华星光电技术有限公司 | OLED display |
| CN111092099A (en) * | 2018-10-23 | 2020-05-01 | 宸鸿光电科技股份有限公司 | Organic light emitting diode display device |
-
2018
- 2018-10-23 CN CN201811234227.7A patent/CN111092099A/en active Pending
-
2019
- 2019-06-06 TW TW108119779A patent/TWI724431B/en active
- 2019-06-06 TW TW108207255U patent/TWM586878U/en unknown
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001043980A (en) * | 1999-07-29 | 2001-02-16 | Sony Corp | Organic electroluminescent element and display device |
| US20040130516A1 (en) * | 2001-02-16 | 2004-07-08 | Arokia Nathan | Organic light emitting diode display having shield electrodes |
| JP2003271076A (en) * | 2002-03-19 | 2003-09-25 | Toshiba Corp | Display device |
| US20040135148A1 (en) * | 2003-01-10 | 2004-07-15 | Chiao-Ju Lin | [top emission active matrix oled and fabricating method thereof] |
| KR20070081250A (en) * | 2006-02-10 | 2007-08-16 | 삼성전자주식회사 | Organic electro-luminescent display and fabrication method thereof |
| CN102779830A (en) * | 2012-06-12 | 2012-11-14 | 南京中电熊猫液晶显示科技有限公司 | Metallic oxide display device and manufacturing method thereof |
| CN102760750A (en) * | 2012-07-27 | 2012-10-31 | 南京中电熊猫液晶显示科技有限公司 | Organic light emitting diode (OLED) metal oxide and preparation method thereof |
| CN106558593A (en) * | 2015-09-18 | 2017-04-05 | 鸿富锦精密工业（深圳）有限公司 | The preparation method of array base palte, display floater, display device and array base palte |
| US20180151120A1 (en) * | 2016-11-30 | 2018-05-31 | Lg Display Co., Ltd. | Organic Light Emitting Display |
| CN108630819A (en) * | 2017-03-21 | 2018-10-09 | 宸鸿光电科技股份有限公司 | Organic LED display device |
| CN106952940A (en) * | 2017-05-26 | 2017-07-14 | 上海天马有机发光显示技术有限公司 | A kind of organic electroluminescence display panel and organic light-emitting display device |
| CN108010944A (en) * | 2017-11-28 | 2018-05-08 | 武汉天马微电子有限公司 | Array substrate and display device |
| CN208954991U (en) * | 2018-10-23 | 2019-06-07 | 宸鸿光电科技股份有限公司 | Organic LED display device |
Also Published As
| Publication number | Publication date |
|---|---|
| TWM586878U (en) | 2019-11-21 |
| TWI724431B (en) | 2021-04-11 |
| TW202017169A (en) | 2020-05-01 |
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