CN102760750A - Organic light emitting diode (OLED) metal oxide and preparation method thereof - Google Patents
Organic light emitting diode (OLED) metal oxide and preparation method thereof Download PDFInfo
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- CN102760750A CN102760750A CN2012102651154A CN201210265115A CN102760750A CN 102760750 A CN102760750 A CN 102760750A CN 2012102651154 A CN2012102651154 A CN 2012102651154A CN 201210265115 A CN201210265115 A CN 201210265115A CN 102760750 A CN102760750 A CN 102760750A
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Abstract
The invention provides an organic light emitting diode (OLED) metal oxide and a preparation method thereof. The OLED metal oxide comprises a scanning line, a second thin film transistor (TFT) metal connection wire, a data line, a current supply line, an insulation layer, a first TFT, a second TFT, a common electrode, an organic luminescent layer and a transparent electrode. The common electrode covers the scanning line, the second TFT metal connection wire, the data line, the current supply line, the first TFT and the second TFT. The second TFT is partially exposed to the outside of the common electrode. The organic luminescent layer is arranged on the common electrode, and the transparent electrode is located on the organic luminescent layer, and the transparent electrode is connected with a second drain electrode. The OLED metal oxide utilizes the common electrode on a back plate to serve as a main luminescent layer, enables the common electrode to cover the scanning line, a signal line, the current supply line, the first TFT and the second TFT, the transparent electrode on the top side is connected with the second drain electrode through a hole, an OLED luminescent layer is formed between the common electrode and the transparent electrode, so that a transparent area is formed outside the common metal in the shape of a frame, and transparency of an OLED displayer is effectively improved.
Description
Technical field
The present invention relates to a kind of OLED lcd technology, relate in particular to a kind of OLED metal oxide and manufacturing approach thereof.
Background technology
Organic electric exciting light-emitting diode (Organic Light-Emitting Diode; OLED) owing to possess self-luminous simultaneously; The characteristic of excellence such as do not need backlight, contrast height, thin thickness, the visual angle is wide, reaction speed is fast, can be used for the flexibility panel, the serviceability temperature scope wide, structure and processing procedure are simpler is considered to the emerging application technology of follow-on flat-panel screens.
Owing to do not need characteristic backlight; Make OLED be suitable as very much the usefulness of transparent display; But the more traditional TFT of the backboard of active AM-OLED (Back-plane) framework is complicated, and the structural representation of existing AM-OLED display panels shown in Figure 1, AM-OLED60 need at least two TFT40,50 to drive; Except data wire (Data Line) 10 and scan line (Scanning Line) 30; The power supply line (Source Line) 20 of electric current also need be provided, and TFT and each holding wire are many to be constituted with lighttight metal, when the luminous framework of configuration OLED, will influence light-emitting zone and also be restricted together with transmission region.
OLED is that organic luminous layer common electrode and transparency electrode up and down provides electric current to pass through organic layer generation light; Common electrode generally also uses lighttight metal to make; Be configured in the outer zone of holding wire; That is light-emitting zone is many, and it is main that this kind is configured to improve light-emitting area in non-holding wire and TFT zone, but the transparency then receives lighttight zone and light-emitting zone influence.
Summary of the invention
The present invention discloses a kind of when guaranteeing the light-emitting zone area, effectively promotes transparent region again, fully shows the characteristic of OLED and the OLED metal oxide and the manufacturing approach thereof of advantage.
The present invention provides a kind of OLED metal oxide, comprising: scan line; The 2nd TFT metal connecting line; Data wire is with the scan line square crossing; Electric current supply line is with the data wire parallel interval; Insulating barrier; The one TFT comprises: the first grid that is connected with scan line, first source electrode that is connected with data wire and be positioned at the TFT semiconductor layer on the insulating barrier; The 2nd TFT comprises: second grid, second source electrode that is connected with electric current supply line that is connected with the 2nd TFT metal connecting line, be positioned at the 2nd TFT semiconductor layer on the insulating barrier; Common electrode covers said scan line, the 2nd TFT metal connecting line, data wire, electric current supply line, the 2nd TFT and the 2nd TFT, and the second drain electrode part is exposed common electrode; Organic luminous layer is positioned on the common electrode; Transparency electrode is positioned on the organic luminous layer, and transparency electrode is connected with second drain electrode.
The present invention provides the manufacturing approach of a kind of OLED metal oxide of a kind of OLED metal oxide again, comprises the steps:
A) form scan line, holding wire, electric current supply line, insulating barrier, a TFT and the 2nd TFT; The one TFT comprises first grid, first source electrode and a TFT semiconductor layer, and the 2nd TFT comprises second grid, second source electrode and the 2nd TFT semiconductor layer;
B) form on the basis of the above-mentioned pattern of formation, cover one deck common electrode, this common electrode covers whole scan line, holding wire, electric current supply line, a TFT and the 2nd TFT, and only second drain electrode of exposed portions serve;
C) on the basis that forms above-mentioned pattern, form first hole that contacts with common electrode and second hole that contacts with second drain electrode, then in first hole, form organic luminous layer;
D) on the basis that forms above-mentioned pattern, form as the transparency electrode that covers organic luminous layer, this transparency electrode extends to the inside in second hole and extends to second drain electrode.
The common electrode of the present invention through on backboard is as main light emitting; And make common electrode cover scan line, holding wire, electric current supply line, a TFT and the 2nd TFT; Transparency electrode with the top side is connected to second drain electrode via the hole again; Between common electrode and transparency electrode, form the OLED luminescent layer, so the common metallic profiles at the frame shape becomes transparent region, can effectively improve the transparency of OLED display.
Description of drawings
Fig. 1 is the structural representation of available liquid crystal display floater;
Fig. 2 is the structural representation of OLED metal oxide of the present invention;
Fig. 2 A is the cutaway view of Fig. 2 in B-B ' direction;
Fig. 3 is the structural representation of another angle of OLED metal oxide of the present invention;
Fig. 3 A is the cutaway view of Fig. 3 in A-A ' direction;
Fig. 4 is the structural representation of one of OLED metal oxide step of manufacturing of the present invention;
Fig. 4 A is the cutaway view of Fig. 4 in B-B ' direction;
Fig. 4 is the structural representation of one of OLED metal oxide step of manufacturing of the present invention;
Fig. 4 A is the cutaway view of Fig. 4 in B-B ' direction;
Fig. 5 is the structural representation of one of OLED metal oxide step of manufacturing of the present invention;
Fig. 5 A is the cutaway view of Fig. 5 in B-B ' direction;
Fig. 6 is the structural representation of one of OLED metal oxide step of manufacturing of the present invention;
Fig. 6 A is the cutaway view of Fig. 6 in B-B ' direction;
Fig. 7 is the structural representation of one of OLED metal oxide step of manufacturing of the present invention;
Fig. 7 A is the cutaway view of Fig. 7 in B-B ' direction;
Fig. 8 is the structural representation of one of OLED metal oxide step of manufacturing of the present invention;
Fig. 8 A is the cutaway view of Fig. 8 in B-B ' direction;
Fig. 9 is the structural representation of OLED metal oxide second embodiment of the present invention;
Fig. 9 A is the cutaway view of Fig. 9 in B-B ' direction;
Embodiment
Below in conjunction with accompanying drawing and specific embodiment; Further illustrate the present invention; Should understand these embodiment only be used to the present invention is described and be not used in the restriction scope of the present invention; After having read the present invention, those skilled in the art all fall within the application's accompanying claims institute restricted portion to the modification of the various equivalent form of values of the present invention.
The present invention discloses a kind of OLED metal oxide; Fig. 2 to 4A is the structural representation of this OLED display; Wherein Fig. 3 is in order to show the internal structure of this OLED display, so common electrode 80 and organic luminous layer 100 are placed on bottom, the figure of the actual pattern of this figure can be with reference to Fig. 9.
This OLED display comprises: scan line 10, the 2nd TFT metal connecting line 20, insulating barrier 30, data wire 50, electric current supply line 60, a TFT, the 2nd TFT, first protective layer 70, the common electrode 80, second protective layer 90, organic luminous layer 100, the transparency electrode 110 that are positioned at glass substrate (figure do not show).
Said scan line 10, the 2nd TFT metal connecting line 20 is positioned on the glass substrate and form together.
Said data wire 50 forms with electric current supply line 60.
Said scan line 10 and the 2nd TFT metal connecting line 20 are positioned at the bottom of this OLED metal oxide.
A said TFT comprises: with scan line 10 connect and the first grid 11 that forms with scan line 10, be positioned at a TFT semiconductor layer 41 on the insulating barrier 30, with first source electrode 51 of a TFT semiconductor layer 41 1 end in contact and contact with a TFT semiconductor layer 41 other ends first drain 52; Said first source electrode 51 connects with said data wire 50 and forms with data wire 50, and the other end of said first drain electrode 52 contacts with the 2nd TFT metal connecting line 20.
Said the 2nd TFT comprises: with the 2nd TFT metal connecting line 20 connect and the second grid 21 that forms with the 2nd TFT metal connecting line 20, be positioned at the 2nd TFT semiconductor layer 42 on the insulating barrier 30, with second source electrode 61 of the 2nd TFT semiconductor layer 42 1 end in contact and contact with the 2nd TFT semiconductor layer 42 other ends second drain 62; Said second source electrode 61 connects with said electric current supply line 60 and forms with electric current supply line 60, and said second drain electrode 62 also forms with data wire 50 and electric current supply line 60.
Said common electrode 80 is positioned on first protective layer 70, and this common electrode 80 is as the negative electrode of OLED, and this common electrode 80 covers whole scan line 10, holding wire 50 and electric current supply line 60, and only exposes second drain electrode 62.
Said organic luminous layer 100 is positioned on the common electrode 80; Said transparency electrode 110 is as the anode of this OLED display; Transparency electrode 110 covers on the organic luminous layer 100; And transparency electrode 100 is connected with second drain electrode, 62 contacts, through being connected with second drain electrode 62, for transparency electrode 110 provides power supply.
OLED metal oxide of the present invention forms clear area 120 through forming transparency electrode 110 in the place that does not have electrode district.
Below for manufacturing approach first embodiment of OLED display of the present invention.
The first step:, go up formation scan line 10, the first grid 11, the 2nd TFT metal connecting line 20 that are connected with scan line 10 and the second grid 21 that is connected with the 2nd TFT metal connecting line 20 at glass substrate (figure does not show) like Fig. 4 and Fig. 4 A.
Second step: like Fig. 5 and Fig. 5 A; On the basis that forms first step pattern; Form insulating barrier 30, and on insulating barrier 30, form the TFT semiconductor layer, form a TFT semiconductor layer 41 and the 2nd TFT semiconductor layer 42 through etching then; And a said TFT semiconductor layer 41 is positioned at the top of first grid 11, and the 2nd TFT semiconductor layer 42 is positioned at the top of second grid 21.
The 3rd step: like Fig. 6 and Fig. 6 A; On the basis that forms the second step pattern; Offer the contact hole that contacts with the 2nd TFT metal connecting line 20 at insulating barrier 30; Cover the layer of metal line then, then through etching form holding wire 50, first source electrode 51, second that is connected with holding wire 50 drains 52, electric current supply line 60, second source electrode 61, second that is connected with electric current supply line 60 drain 62.
Said second drain electrode, 52 part is positioned at the contact hole that insulating barrier 30 forms, and second drain electrode, 52 1 ends contact with the 2nd TFT metal connecting line 20, and second drain 52 other ends and the TFT semiconductor layer 41 contacts and be positioned at the top of a TFT semiconductor layer 41.
The 4th step: like Fig. 7 and Fig. 7 A; On the basis that forms the 3rd step pattern; Covering one deck first protective layer 70 earlier; Covering the common electrode 80 that forms on the basis of first protective layer 70 as negative electrode then, this common electrode 80 covers whole scan line 10, holding wire 50 and electric current supply line 60, and only exposes and be positioned at second of first protective layer 70 and drain 62.
The 5th step: like Fig. 8 and Fig. 8 A; On the basis that forms the 4th step pattern; Form second protective layer 90 that covers common electrode 80; On second protective layer 90, form first hole (figure does not show) that contacts with common electrode 80 and the hole 91 that contacts with second drain electrode 62 then, then in first hole, form organic luminous layer 100.
The width in said first hole is less than the width of said common electrode 80, so the organic luminous layer 100 that forms is less than the width of said common electrode 80.
The 6th step: like Fig. 9 and Fig. 9 A; On the basis that forms the 5th step pattern; Formation is as the transparency electrode 110 of anode; This transparency electrode 110 covers organic luminous layer 100 and is positioned at the inside in second hole 91 and extends in second drain electrode 62, realizes that promptly transparency electrode 110 62 is connected with second drain electrode, and realizing second, to drain 62 be that transparency electrode 110 is supplied power.
Through forming transparency electrode 110, form clear area 120 in the place that does not have electrode district.
Figure 10 and Figure 10 A are the second embodiment of the present invention, and what present embodiment was different with above-mentioned first embodiment is can not add protective layer on the common electrode; Directly cover common electrode with organic luminous layer; Cover with transparency electrode more comprehensively, reduced layer protective layer after, transparency can promote.
On manufacturing approach; This enforcement lacks formation second protective layer 90 in the above-mentioned first embodiment step 5; Organic luminous layer 100 directly overlays on the common electrode 80; First protective layer 70 is run through in said hole and second drain electrode 62 is communicated with, and said transparency electrode 110 covers on the whole pattern comprehensively, and transparency electrode 110 and second drains and 62 contacts.
The step of manufacturing of this second embodiment is following:
The first step: go up formation scan line 10, the first grid 11, the 2nd TFT metal connecting line 20 that are connected with scan line 10 and the second grid 21 that is connected with the 2nd TFT metal connecting line 20 at glass substrate (figure does not show).
Second step: on the basis that forms first step pattern, form insulating barrier 30, and offer a TFT semiconductor layer 41 and the 2nd TFT semiconductor layer 42 at insulating barrier 30, and a said TFT semiconductor layer 41.
The 3rd step: on the basis that forms the second step pattern; On insulating barrier 30, form contact hole contact with the 2nd TFT metal connecting line 20, and then form holding wire 50, first source electrode 51, second that is connected with holding wire 50 drains 52, electric current supply line 60, second source electrode 61, second that is connected with electric current supply line 60 drain 62.
The 4th step: on the basis that forms the 3rd step pattern; Covering one deck first protective layer 70 earlier; On the basis that covers first protective layer 70, form common electrode 80 then as negative electrode; This common electrode 80 covers whole scan line 10, holding wire 50 and electric current supply line 60, and only exposes and be positioned at second of first protective layer 70 and drain 62.
The 5th step: on the basis that forms the 4th step pattern, on first protective layer 70, form first hole (figure does not show) that contacts with common electrode 80 and the hole 91 that contacts with second drain electrode 62, then in first hole, form organic luminous layer 100.
The 6th step: on the basis that forms the 5th step pattern; Formation is as the transparency electrode 110 of anode; This transparency electrode 110 covers organic luminous layer 100 and is positioned at the inside in hole 91 and extends in second drain electrode 62, realizes promptly that transparency electrode 110 and second drains 62 to be connected.
The present invention is through covering common electrode the metal framework of holding wire, data wire and electric current supply line; And through common electrode is contacted with organic luminous layer with contact hole is set on the common electrode; Transparency electrode through second drain electrode conducting top through the hole under common electrode covers again; Thereby make to reach that luminous to sentence lighttight common electrode be main, all the other zones promote the transparency of whole OLED display as transparency electrode.
Claims (10)
1. an OLED metal oxide is characterized in that, comprising:
Scan line;
The 2nd TFT metal connecting line;
Data wire is with the scan line square crossing;
Electric current supply line is with the data wire parallel interval;
Insulating barrier;
The one TFT comprises: the first grid that is connected with scan line, first source electrode that is connected with data wire and be positioned at the TFT semiconductor layer on the insulating barrier;
The 2nd TFT comprises: second grid, second source electrode that is connected with electric current supply line that is connected with the 2nd TFT metal connecting line, be positioned at the 2nd TFT semiconductor layer on the insulating barrier;
Common electrode covers said scan line, the 2nd TFT metal connecting line, data wire, electric current supply line, the 2nd TFT and the 2nd TFT, and the second drain electrode part is exposed common electrode;
Organic luminous layer is positioned on the common electrode;
Transparency electrode is positioned on the organic luminous layer, and transparency electrode is connected with second drain electrode.
2. OLED metal oxide as claimed in claim 1 is characterized in that: said insulating barrier is provided with first protective layer, and said common electrode is positioned on first protective layer.
3. OLED metal oxide as claimed in claim 2 is characterized in that: said common electrode is provided with second protective layer, offers first hole that is connected with common electrode on said second protective layer, and said organic luminous layer is positioned at first hole.
4. OLED metal oxide as claimed in claim 3 is characterized in that: also comprise second hole of running through second protective layer, first protective layer and insulating barrier and being connected with second drain electrode, said transparency electrode is passed this second hole and is connected with second drain electrode.
5. OLED metal oxide as claimed in claim 2 is characterized in that: said organic luminous layer covers on the common electrode.
6. OLED metal oxide as claimed in claim 5 is characterized in that: also comprise second hole of running through first protective layer and insulating barrier and being connected with second drain electrode, said transparency electrode is passed this second hole and second and is drained and be connected.
7. OLED metal oxide as claimed in claim 1 is characterized in that: said scan line and the 2nd TFT metal connecting line form with layer metal, and said data wire and electric current supply line form with layer metal.
8. the manufacturing approach of an OLED metal oxide is characterized in that, comprises the steps:
A) form scan line (10), holding wire (50), electric current supply line (60), insulating barrier (30), a TFT and the 2nd TFT; The one TFT comprises first grid (11), first source electrode (51) and a TFT semiconductor layer (41), and the 2nd TFT comprises second grid (21), second source electrode (the 61 and the 2nd TFT semiconductor layer (42);
B) form on the basis of the above-mentioned pattern of formation; Cover one deck common electrode (80); This common electrode (80) covers whole scan line (10), holding wire (50), electric current supply line (60), a TFT and the 2nd TFT, and only second drain electrode (62) of exposed portions serve;
C) on the basis that forms above-mentioned pattern, form first hole that contacts with common electrode (80) and second hole (91) that contacts with second drain electrode (62), then in first hole, form organic luminous layer (100);
D) on the basis that forms above-mentioned pattern, form as the transparency electrode (110) that covers organic luminous layer (100), this transparency electrode (110) extends to the inside in second hole (91) and extends to second drain electrode (62).
9. the manufacturing approach of OLED metal oxide according to claim 8; It is characterized in that; Said step C); Forming organic luminous layer (100) before, forming second protective layer (90) that covers common electrode (80) earlier, going up at second protective layer (90) then and form first hole that contacts with common electrode (80) and second hole 91 that contacts with second drain electrode 62.
10. the manufacturing approach of OLED metal oxide according to claim 8 is characterized in that, said steps A) comprise the steps:
A1) second grid (21) that forms scan line (10), the first grid (11) that is connected with scan line (10), the 2nd TFT metal connecting line (20) and be connected with the 2nd TFT metal connecting line (20);
A2) on the basis that forms above-mentioned pattern, form insulating barrier (30), and go up formation the one TFT semiconductor layer (41) and the 2nd TFT semiconductor layer (42) at insulating barrier (30);
A3) on the basis that forms above-mentioned pattern; Offer the contact hole that contacts with the 2nd TFT metal connecting line (20) at insulating barrier (30); Then form holding wire (50), first source electrode (51) that is connected with holding wire (50), second drain electrode (52), the electric current supply line (60), second source electrode (61) that is connected with electric current supply line (60), second drain electrode (62), second drain electrode (62) one ends contact with the 2nd TFT metal connecting line 20 through said contact hole.
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| CN107564941A (en) * | 2017-07-25 | 2018-01-09 | 武汉华星光电半导体显示技术有限公司 | Flexible OLED array and preparation method thereof |
| CN108269831A (en) * | 2016-12-30 | 2018-07-10 | 乐金显示有限公司 | Organic light-emitting display device with connection clad electrode |
| CN110473897A (en) * | 2019-06-28 | 2019-11-19 | 福建华佳彩有限公司 | A kind of embedded OLED display panel and preparation method thereof |
| CN110858607A (en) * | 2018-08-24 | 2020-03-03 | 乐金显示有限公司 | Display device |
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| CN108269831A (en) * | 2016-12-30 | 2018-07-10 | 乐金显示有限公司 | Organic light-emitting display device with connection clad electrode |
| JP2018110114A (en) * | 2016-12-30 | 2018-07-12 | エルジー ディスプレイ カンパニー リミテッド | Organic light-emitting display device including connected clad electrode |
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| CN107564941B (en) * | 2017-07-25 | 2019-05-03 | 武汉华星光电半导体显示技术有限公司 | Flexible OLED array and preparation method thereof |
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| CN110473897A (en) * | 2019-06-28 | 2019-11-19 | 福建华佳彩有限公司 | A kind of embedded OLED display panel and preparation method thereof |
| CN110473897B (en) * | 2019-06-28 | 2024-02-27 | 福建华佳彩有限公司 | Embedded OLED display panel and manufacturing method thereof |
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