CN111083817B - Non-linear transmission light processor - Google Patents
Non-linear transmission light processor Download PDFInfo
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- CN111083817B CN111083817B CN201911327913.3A CN201911327913A CN111083817B CN 111083817 B CN111083817 B CN 111083817B CN 201911327913 A CN201911327913 A CN 201911327913A CN 111083817 B CN111083817 B CN 111083817B
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- phase change
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- change film
- electric heater
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention relates to the technical field of light protection, and discloses a nonlinear transmission light processor which comprises a substrate, an electric heater and a temperature controller, wherein a phase change film is deposited on one surface of the substrate, the electric heater is arranged on the other surface of the substrate and used for heating the substrate, the electric heater is electrically connected with an external power supply through the temperature controller, the temperature controller is used for controlling the temperature of the substrate to be lower than the phase change temperature of the phase change film, and the difference value between the control temperature of the temperature controller and the phase change temperature is smaller than a set threshold value. The optical processor provided by the invention has the technical effect of quick switching response.
Description
Technical Field
The invention relates to the technical field of light protection, in particular to a nonlinear transmission light processor.
Background
High-sensitivity infrared detectors can be saturated with signals under strong light such as laser irradiation, and in severe cases, some pixels of the detectors can be damaged permanently. Preventing strong light from interfering with or destroying infrared detectors is therefore a problem that must be solved in today's detector applications, in particular in photo-countermeasure applications. Existing safeguards include enhanced threshold of resistance to high light by reasonable coating design on the optical system and detector, or the placement of a nonlinear transmissive optical element in front of the infrared detector to block or restrict the passage of high light, but still keep low light passing. Nonlinear transmissive optical elements are mainly of two types, one being thin-film optical switching elements based on thermally induced phase transitions, such as VO 2 Another class of thin film optical switches is optical coated components, such as graphene-based coatings, that are based on nonlinear optical absorption or scattering effects to cause saturation of transmitted light. The nonlinear transmission elements based on the phase change film have simple structure and intelligent response characteristics, but the response characteristics of the optical switches are single and the response time is long.
Disclosure of Invention
The invention aims to overcome the technical defects and provide a nonlinear transmission light processor, which solves the technical problems that in the prior art, an optical switch has long response time and cannot well protect a detector.
In order to achieve the technical purpose, the technical scheme of the invention provides a nonlinear transmission light processor, which comprises a substrate, an electric heater and a temperature controller, wherein a phase change film is deposited on one surface of the substrate, the electric heater is arranged on the other surface of the substrate and used for heating the substrate, the electric heater is electrically connected with an external power supply through the temperature controller, and the temperature controller is used for controlling the temperature of the substrate to be lower than the phase change temperature of the phase change film.
Compared with the prior art, the invention has the beneficial effects that: the invention arranges an electric heater on the substrate, the electric heater heats the substrate, and the substrate transfers heat to the phase change film. The heating temperature of the electric heater is controlled by the temperature controller, the substrate and the phase change film are heated to a temperature value which is close to the phase change temperature of the phase change film but lower than the phase change temperature of the phase change film in advance, and the optical power threshold of the phase change film for generating phase change is reduced, so that the phase change switching time can be greatly shortened, the timely response capability of the optical processor to strong light irradiation is improved, and the reaction time is reduced. When laser light comes, the phase change film can be subjected to phase change only in a short time and with small optical power. When the method is applied to the protection of the detector, the time of the detector irradiated by strong light can be greatly shortened, the power irradiated by the strong light is reduced, the interference of the strong light is reduced, and the detector is better protected. The invention integrates the electric heater on the passive nonlinear transmission optical element, so that the phase-change threshold value adjustable performance is achieved, and the phase-change threshold value is reduced, so that the strong light early warning time is shortened, and the detector can be better protected.
Drawings
FIG. 1 is a top view of one embodiment of a non-linear transmissive light processor provided in the present invention;
FIG. 2 is a cross-sectional view taken at A-A of FIG. 1;
FIG. 3 is a front view of one embodiment of a non-linear transmissive light processor provided in the present invention;
fig. 4 is a schematic diagram of an exemplary curve and associated power values to which the present invention relates.
Reference numerals:
1. the device comprises a substrate, 2, an electric heater, 21, a heating electrode, 22, a connecting electrode, 3, a phase change film, 31, a metal electrode, 4, a bias power supply, 5 and a signal acquisition circuit.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example 1
As shown in fig. 1 and fig. 2, embodiment 1 of the present invention provides a nonlinear transmissive optical processor, which is hereinafter referred to as a present optical processor for short, and includes a substrate 1, an electric heater 2, and a temperature controller, wherein a phase change film 3 is deposited on one surface of the substrate 1, the electric heater 2 is disposed on the other surface of the substrate 1, the electric heater 2 is configured to heat the substrate 1, the electric heater 2 is electrically connected to an external power source through the temperature controller, the temperature controller is configured to control a temperature of the substrate 1 to be lower than a phase change temperature of the phase change film 3, and a difference between the control temperature of the temperature controller and the phase change temperature is smaller than a set threshold.
The working principle of the invention is as follows: when the phase change film 3 on the large-area substrate 1 is irradiated by the strong light IR, the thermoreversible phase change is generated mainly through the action of radiation heating and temperature rise. Before and after the phase transition, the infrared transmittance of the phase change film 3 is largely changed, and the state is rapidly changed from the high transparent state at a low temperature to the low transmittance state at a high temperature, so that the nonlinear change is also called a phase change optical switch. In the case of intense IR radiation, the switching time due to the thermally induced phase change can only reach ms levels in general, since radiant heating of light requires a certain time to accumulate. In the embodiment of the invention, the electric heater 2 is arranged on the substrate 1, and the electric heater 2 heats the substrate 1 to a temperature value close to the phase change temperature in advance, so that the phase change switching time can be greatly shortened, and meanwhile, the optical power threshold value for generating phase change can be reduced. When the method is applied to the protection of the detector, the time of the detector irradiated by strong light can be greatly shortened, and the power irradiated by the strong light is reduced. In addition, a phase change threshold exists when the phase change film 3 is subjected to phase change, that is, the optical power required for generating phase change is generated, generally, when the phase change film 3 is not preheated, the phase change threshold of the phase change film 3 is higher, and the peak value of the transmitted optical power of the strong light IR after passing through the phase change film 3 is higher than the signal saturation threshold of the detector, so that even if the phase change film 3 is used, the detector signal may be saturated for a period of time, and the detector cannot work effectively in the period of time. However, in this embodiment, the electric heater 2 is arranged to heat the substrate 1 and the phase change film 3 to a certain temperature in advance, so that the phase change threshold of the phase change film 3 can be reduced, and the optical power passing through the phase change film 3 can be reduced, which is beneficial for the optical processor to respond to the strong light irradiation in time, reduces the strong light reaction time, and is very beneficial for reducing the strong light interference and protecting the detector.
Fig. 4 gives a schematic representation of the light power distribution received by the phase change film 3 and the detector in relation to irradiation with strong light. P L Curve 1 is a schematic curve of intense light IR irradiation pulses for laser peak power; curve 2 is VO 2 The curve of the power of the transmission light of the phase change film 3 without preheating, and the curve 3 is VO 2 Preheated transmitted light power curve of phase change film 3, P VO2 Is VO 2 Peak power of transmitted light, P, of phase change film 3 without preheating VO2 ’ Is VO 2 The preheated peak power of the transmitted light of the phase change film 3; p s,max Is the maximum light power value, P, of the signal light received by the detector under normal conditions s,th Is the threshold value of the optical power, P, of the signal light received by the detector when the signal is saturated d,th Is the threshold of the optical power received by the detector when damaged by intense light irradiation. As can be seen from fig. 4, after the preheating, the peak power of the transmitted light of the phase-change film 3 is reduced, the phase-change threshold is reduced, and the phase-change reaction is faster.
The invention integrates the electric heater 2 on the passive nonlinear transmission optical element, and combines the temperature controller to form an active optical processor which can actively preheat, so that the active optical processor has adjustability of phase change threshold, thereby reducing the phase change threshold, shortening the heat value phase change reaction time and better protecting the detector.
Preferably, the electric heater 2 includes a heating electrode 21 and two connecting electrodes 22, the heating electrode 21 and two connecting electrodes 22 are both disposed on the substrate 1, one end of the heating electrode 21 is electrically connected to one of the connecting electrodes 22, the other end of the heating electrode 21 is electrically connected to the other connecting electrode 22, and the two connecting electrodes 22 are respectively electrically connected to an external power supply through the temperature control device, so as to realize the heating and temperature control functions.
Preferably, as shown in fig. 1, the heating electrode 21 has a serpentine shape.
The serpentine heating electrode 21 can be uniformly distributed on the substrate 1, which is beneficial to uniformly heating the substrate 1 and the phase-change film 3. The resistance range of the heating electrode 21 may be set at 100-300 Ω.
Preferably, the heating electrode 21 is an infrared transparent electrode. In order to ensure transparency In the mid-wave infrared band, the heating electrode 21 In this embodiment is an infrared transparent electrode, i.e., the heating electrode 21 is made of a material that transmits light In the infrared band, and the infrared transparent electrode can be implemented by a transparent conductive metal oxide thin film, such as In-doped 2 O 3 、NiCo 2 O 4 、LiCo 2 O 4 And the like.
Preferably, as shown in fig. 3, the optical processor further includes a bias power supply 4 and a signal acquisition circuit 5, wherein the bias power supply 4 is electrically connected to the phase change film 3, and the signal acquisition circuit 5 is electrically connected to the phase change film 3 and is configured to measure a resistance change of the phase change film 3.
In the preferred embodiment, the signal acquisition circuit 5 is used for outputting the early warning signal when strong light appears in time, so that the capability of outputting the early warning signal after phase inversion is not needed is realized. Specifically, a pair of metal electrodes 31 is deposited on two opposite sides of the phase change film 3, the phase change film 3 is connected with a bias power supply 4 through the metal electrodes 31, the bias power supply 4 provides bias voltage for the phase change film 3, meanwhile, the phase change film 3 is electrically connected with an external signal acquisition circuit 5 through the metal electrodes 31, and the signal acquisition circuit 5 is used for measuring voltage change caused by resistance change of the phase change film 3. The signal acquisition circuit 5 may be implemented by a voltage division measurement circuit as long as the measurement of the resistance change can be implemented. In the action process of the strong light and the phase change film 3, the resistance of the phase change film 3 is continuously reduced along with the rise of the temperature, and electricity is collected through signalsThe voltage signal obtained by the circuit 5 is also changing, but the transmitted intense light power is still increasing. When the transmission power is already significantly higher than the maximum power value P of normal light s,max But not yet reaching the optical power threshold P at saturation s,th In time, the signal acquisition circuit 5 can compare the real-time signal with a preset signal value to obtain a judgment result of the occurrence of the strong light, so that an early warning signal of the occurrence of the strong light can be rapidly sent to the detector or other devices, and the detector or other devices can take precautionary measures or execute certain actions in time. On the other hand, based on the data scaled in advance, it is also possible to judge whether the temperature value of the substrate 1 reaches or exceeds the set value by the change in this voltage.
Preferably, the phase change film 3 has a plurality of layers, the plurality of layers of phase change films 3 are sequentially stacked and deposited on the substrate 1, and the plurality of layers of phase change films 3 are phase change films 3 made of different materials.
The phase change film 3 of a multilayer structure is used for further improving the infrared transmittance and simultaneously improving the threshold value of strong light damage resistance.
Preferably, the substrate 1 is a sapphire substrate 1.
In the present embodiment, the sapphire substrate 1 made of sapphire material is used, and other substrates 1, such as a medium-wave infrared transparent substrate 1 made of silicon, germanium, ZnSe, etc., may also be used.
Preferably, the phase change film 3 is VO 2 A phase change film 3.
VO made of vanadium dioxide in this example 2 A phase change film 3. Specifically, a square or rectangular VO is deposited on the first surface of the sapphire substrate 1 2 And the phase change film 3 is 50-200nm thick. The phase change film 3 may be VO 2 Film-based film systems comprising surface antireflection layers, e.g. SiO 2 Layer, further comprising at VO 2 Buffer layers between the film and the substrate 1, e.g. Al 2 O 3 And (3) a layer.
The above-described embodiments of the present invention should not be construed as limiting the scope of the present invention. Any other corresponding changes and modifications made according to the technical idea of the present invention should be included in the protection scope of the claims of the present invention.
Claims (6)
1. A nonlinear transmission light processor is characterized by comprising a substrate, an electric heater and a temperature controller, wherein a phase change film is deposited on one surface of the substrate, the electric heater is arranged on the other surface of the substrate and used for heating the substrate, the electric heater is electrically connected with an external power supply through the temperature controller, the temperature controller is used for controlling the temperature of the substrate to be lower than the phase change temperature of the phase change film, and the difference between the control temperature of the temperature controller and the phase change temperature is smaller than a set threshold value;
the nonlinear transmission light processor also comprises a bias power supply and a signal acquisition circuit, wherein the bias power supply is electrically connected with the phase change film, the signal acquisition circuit is electrically connected with the phase change film and is used for measuring the resistance change of the phase change film, the signal acquisition circuit compares a real-time signal with a preset signal value to judge whether the detector is currently subjected to interference of strong light, and when the detector is subjected to interference of the strong light, an early warning signal is sent out;
the phase change film has a plurality of layers, the plurality of layers of phase change films are sequentially stacked and deposited on the substrate, and the plurality of layers of phase change films are respectively phase change films made of different materials.
2. The non-linear transmissive optical processor of claim 1, wherein said electric heater comprises a heating electrode and two connecting electrodes, said heating electrode and said two connecting electrodes are disposed on said substrate, one end of said heating electrode is electrically connected to one of said connecting electrodes, the other end of said heating electrode is electrically connected to the other of said connecting electrodes, and said two connecting electrodes are electrically connected to an external power source through said temperature control device, respectively.
3. The non-linear transmissive light processor of claim 2 wherein the heated electrode has a serpentine shape.
4. The non-linear transmissive light processor of claim 2 wherein the heating electrode is an infrared transparent electrode.
5. The non-linear transmissive light processor of claim 1 wherein the substrate is a sapphire substrate.
6. The nonlinear transmissive optical processor of claim 1, wherein the phase change film is VO 2 And (3) a phase change film.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101958335A (en) * | 2009-07-16 | 2011-01-26 | 中芯国际集成电路制造(上海)有限公司 | Phase change random access memory and manufacturing method and programming method thereof |
| CN104036824A (en) * | 2013-03-06 | 2014-09-10 | 索尼公司 | Semiconductor Device And Information Reading Method |
| CN108292515A (en) * | 2015-12-26 | 2018-07-17 | 英特尔公司 | Phase transformation is read and automatic reparation |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN2681163Y (en) * | 2003-10-22 | 2005-02-23 | 华中科技大学 | Micro vanadium dioxide optical switch |
| US7750333B2 (en) * | 2006-06-28 | 2010-07-06 | Intel Corporation | Bit-erasing architecture for seek-scan probe (SSP) memory storage |
| CN109336045B (en) * | 2018-09-29 | 2020-08-04 | 湖北大学 | Flexible device for dynamically and rapidly regulating and controlling infrared light transmittance and preparation method and application thereof |
| CN209046004U (en) * | 2018-11-02 | 2019-06-28 | 中国科学院西安光学精密机械研究所 | A kind of phase transformation heat control system of high-power laser diode pumping source array |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101958335A (en) * | 2009-07-16 | 2011-01-26 | 中芯国际集成电路制造(上海)有限公司 | Phase change random access memory and manufacturing method and programming method thereof |
| CN104036824A (en) * | 2013-03-06 | 2014-09-10 | 索尼公司 | Semiconductor Device And Information Reading Method |
| CN108292515A (en) * | 2015-12-26 | 2018-07-17 | 英特尔公司 | Phase transformation is read and automatic reparation |
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