CN111074327A - Electroplating process and apparatus - Google Patents
Electroplating process and apparatus Download PDFInfo
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- CN111074327A CN111074327A CN202010002526.9A CN202010002526A CN111074327A CN 111074327 A CN111074327 A CN 111074327A CN 202010002526 A CN202010002526 A CN 202010002526A CN 111074327 A CN111074327 A CN 111074327A
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
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Abstract
The application discloses an electroplating process and an electroplating device. The electroplating process comprises the following steps: providing a first test voltage, so that the structure to be electroplated has a first electrical parameter; adjusting the first test voltage according to the first electrical parameter to enable the first electrical parameter to be within a first preset value range; and carrying out first electroplating on the structure to be electroplated by adopting a first test voltage to form a first electroplating film, wherein the first preset value is smaller than the maximum current value or the maximum voltage value which can be borne by the structure to be electroplated. The electroplating process and the device provide test voltage for the structure to be electroplated before electroplating starts, and detect, judge and control the test voltage, so that the electrical parameters of the structure to be electroplated are within a preset value range, and the structure to be electroplated is prevented from being heated and damaged due to overhigh voltage or overlarge current.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to an electroplating process and an electroplating device.
Background
With the development of semiconductor manufacturing processes, the size of semiconductor devices is continuously reduced to achieve smaller volume and better performance. In a semiconductor manufacturing process, a plurality of different steps, such as etching, deposition, etc., are typically used on a wafer (wafer) surface to fabricate various semiconductor structures and interconnect lines.
For example, after forming a via or a trench on the surface of a wafer, a conductive material is required to be filled in the via or the trench to connect a transistor at the bottom of the wafer, and a Copper interconnection line is usually formed in the via or the trench by an electroplating process, such as an Electrical Copper Plating (ECP). In the electroplating process, the wafer is placed in an electrolyte and energized to form a metal film within the via or trench. After the metal film is filled in the via or the trench, it is necessary to continue to form a uniform metal film covering the surface of the wafer, so as to facilitate a subsequent Chemical Mechanical Planarization (CMP) process on the wafer.
However, in the conventional electroplating process, in order to save the process time and increase the production rate, the wafer is electroplated with a large current, and when the resistance of the wafer is too large or the contact between the wafer and the electrode is poor, a large amount of heat is generated at the position of the wafer with the too large resistance or the poor contact, so that the wafer or the electroplating apparatus is damaged. Further, the above-mentioned problems are more likely to occur because the wafer has a higher resistance at the edge relative to the center due to the edge effect phenomenon of the wafer. In addition, the above-described problems also occur in the electroplating process of other semiconductor devices.
Therefore, it is desirable to further improve the electroplating process and apparatus to solve the above problems.
Disclosure of Invention
In view of the above problems, the present invention provides an electroplating process and apparatus, so as to prevent the structure to be electroplated from being damaged due to excessive voltage or current.
According to a first aspect of the present invention, there is provided an electroplating process comprising: providing a first test voltage, so that the structure to be electroplated has a first electrical parameter; adjusting the first test voltage according to the first electrical parameter to enable the first electrical parameter to be within a first preset value range; and carrying out first electroplating on the structure to be electroplated by adopting the first test voltage to form a first electroplating film, wherein the first preset value is within the bearable range of the structure to be electroplated.
Preferably, when the first electrical parameter is a current value, the first preset value is smaller than a maximum current value that the structure to be plated can bear, and when the first electrical parameter is a voltage value, the first preset value is smaller than a maximum voltage value that the structure to be plated can bear.
Preferably, after the first plating film is formed, further comprising: providing a second test voltage, so that the structure to be electroplated has a second electrical parameter; adjusting the second test voltage according to the second electrical parameter to enable the second electrical parameter to be within a second preset value range; and carrying out secondary electroplating on the structure to be electroplated by adopting the second test voltage so as to form a second electroplating film.
Preferably, after the second plating film is formed, further comprising: providing a third test voltage so that the structure to be electroplated has a third electrical parameter; adjusting the third test voltage according to the third electrical parameter so that the third electrical parameter is within a third preset value range; and carrying out third electroplating on the structure to be electroplated by adopting the third test voltage so as to form a third electroplating film.
Preferably, the minimum value of the second preset value is not less than the maximum value of the first preset value, and the minimum value of the third preset value is not less than the maximum value of the second preset value.
Preferably, the first preset value range is 1-6A, the second preset value range is 6-30A, and the third preset value range is 30-50A.
According to a second aspect of the present invention, there is provided an electroplating apparatus for electroplating a structure to be electroplated, comprising: the power supply is provided with a positive power supply end, a negative power supply end and a control end and is used for providing a test voltage between the positive power supply end and the negative power supply end and adjusting the test voltage according to a control signal received by the control end; the anode of the electroplating bath is connected to the positive power supply end, the cathode of the electroplating bath provides electric connection between the negative power supply end and the structure to be electroplated, and electroplating solution contained in the bath body forms an electroplating film on the surface of the electroplating structure under the action of the test current; and the first end of the feedback module is connected to the structure to be electroplated, and the second end of the feedback module is connected to the control end, and the feedback module is used for detecting the electrical parameters of the structure to be electroplated and providing control signals according to the electrical parameters so as to adjust the test voltage, so that the electrical parameters are in the bearable range of the structure to be electroplated.
Preferably, the first end of the feedback module has two sub-ports, and the two sub-ports are respectively connected to a first surface and a second surface of the structure to be plated so as to detect a voltage value of the structure to be plated, and the first surface and the second surface are opposite to each other.
Preferably, the first end of the feedback module has two sub-ports, the two sub-ports are respectively connected to a cathode and a second surface of the structure to be plated to detect a voltage value of the structure to be plated, the cathode is located on a first surface of the structure to be plated, and the first surface and the second surface are opposite to each other.
Preferably, a first end of the feedback module is connected to the structure to be plated through the cathode, a third end of the feedback module is connected to the negative power supply end to detect a current value of the structure to be plated, and the feedback module provides the control signal according to the current value and sends the control signal to the control end through the second end.
According to the electroplating process and the electroplating device, before electroplating is started, the test voltage is provided for the structure to be electroplated, and the test voltage is detected, judged and controlled, so that the electrical parameters of the structure to be electroplated are within a preset value range, and the structure to be electroplated is prevented from being heated and damaged due to overhigh voltage or overlarge current.
Furthermore, the electroplating process and the electroplating device divide the whole electroplating process into a first stage to a third stage, and the current flowing through the structure to be electroplated is gradually increased in the first stage to the third stage, so that the structure to be electroplated is not damaged, and the production efficiency is improved.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following description of the embodiments of the present invention with reference to the accompanying drawings, in which:
FIG. 1 shows a flow chart of an electroplating process according to a first embodiment of the invention;
FIG. 2 shows a flow chart of an electroplating process according to a second embodiment of the invention;
FIG. 3 is a schematic view showing an electroplating apparatus according to a first embodiment of the present invention;
fig. 4 shows a schematic view of a plating apparatus according to a second embodiment of the invention.
Detailed Description
Various embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by the same or similar reference numerals. For purposes of clarity, the various features in the drawings are not necessarily drawn to scale.
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples.
Fig. 1 shows a flow chart of an electroplating process according to a first embodiment of the invention.
As shown in fig. 1, the electroplating process of this embodiment at least includes steps S101 to S104, and the electroplating process is completed based on an electroplating apparatus, and before the electroplating process is performed, a structure to be electroplated, such as a wafer or other semiconductor structure, is connected to a cathode of the electroplating apparatus, and is placed in an electroplating solution.
In step S101, before the first stage, a first test voltage is provided, so that the structure to be plated has a first electrical parameter. In this step, the first electrical parameter is, for example, a voltage of the structure to be plated or a current flowing through the structure to be plated. Wherein a first test voltage is provided, for example, with a supply voltage of the electroplating apparatus.
Further, the first test voltage is adjusted according to the first electrical parameter so that the first electrical parameter is within a first preset value range, and more specifically, steps S102 to S103 are performed.
In step S102, it is determined whether the first electrical parameter is within a first preset value range, if the first electrical parameter is within the first preset value range, step S104 is performed, and if the first electrical parameter is not within the first preset value range, step S103 is performed. In this step, the first preset value is smaller than the maximum voltage value or the maximum current value that the structure to be electroplated can bear, and meets the requirement of the electroplating rate in the first stage, wherein the maximum voltage value or the maximum current value that the structure to be electroplated can bear is an inherent parameter of the structure to be electroplated. Taking the first preset value as an example, when the structure to be electroplated is a wafer, the first preset value is preferably in a range of 1-6A.
In step S103, when the first electrical parameter is not within the first preset value range, the first test voltage is adjusted so that the first electrical parameter is within the first preset value range.
In step S104, in a first stage after step S102 or step S103, a first electroplating is performed on the structure to be electroplated using a first test voltage, so as to form a first plated film on the surface of the structure to be electroplated.
In this embodiment, before the first electroplating, a first test voltage is provided to the structure to be electroplated, and due to the detection, judgment and control of the first test voltage in steps S102 and S103, the first electrical parameter of the structure to be electroplated is within the first preset value range, so that the structure to be electroplated is prevented from being damaged due to heat generated by too high voltage or too high current, and the stability of the electroplating process is higher.
Preferably, before the electroplating process is performed, a pretreatment of the structure to be electroplated is further included, such as grinding, polishing, hanging, degreasing and degreasing, washing, electropolishing or chemical polishing, acid washing activation, pre-dipping, and the like, and after the electroplating process is finished, a post-treatment of the structure to be electroplated is further included, such as washing, drying, hanging, inspecting and packaging, and the like, which are not described in detail herein.
Fig. 2 shows a flow chart of an electroplating process according to a second embodiment of the invention.
As shown in fig. 2, the electroplating process of this embodiment at least includes steps S201 to S212, and the electroplating process is completed based on an electroplating apparatus, and before the electroplating process is performed, a structure to be electroplated, such as a wafer or other semiconductor structure, is connected to a cathode of the electroplating apparatus, and is placed in an electroplating solution.
In step S201, before the first stage, a first test voltage is provided, so that the structure to be plated has a first electrical parameter. In this step, the first electrical parameter is, for example, a voltage of the structure to be plated or a current flowing through the structure to be plated. Wherein a first test voltage is provided, for example, with a supply voltage of the electroplating apparatus.
Further, the first test voltage is adjusted according to the first electrical parameter so that the first electrical parameter is within a first preset value range, and more specifically, steps S202 to S203 are performed.
In step S202, it is determined whether the first electrical parameter is within a first preset value range, if the first electrical parameter is within the first preset value range, step S204 is performed, and if the first electrical parameter is not within the first preset value range, step S203 is performed. In this step, the first preset value is smaller than the maximum voltage value or the maximum current value that the structure to be electroplated can bear, and the requirement of the electroplating rate in the first stage is met. Taking the first preset value as an example, when the structure to be electroplated is a wafer, the first preset value is preferably in a range of 1-6A.
In step S203, when the first electrical parameter is not within the first preset value range, the first test voltage is adjusted so that the first electrical parameter is within the first preset value range.
In step S204, in a first stage after step S202 or step S203, a first electroplating is performed on the structure to be electroplated with a first test voltage, so as to form a first electroplating film on the surface of the structure to be electroplated. The first electroplating film is used for filling the through hole and/or the groove in the structure to be electroplated
In step S205, before the second stage, a second test voltage is provided, so that the structure to be plated has a second electrical parameter. In this step, the second electrical parameter is, for example, the voltage of the structure to be plated or the current flowing through the structure to be plated. Wherein the second test voltage is provided, for example, using a supply voltage of the electroplating apparatus.
Further, the second test voltage is adjusted according to the second electrical parameter so that the second electrical parameter is within a second preset value range, and more specifically, steps S206 to S207 are performed.
In step S206, it is determined whether the second electrical parameter is within a second preset value range, if the second electrical parameter is within the second preset value range, step S208 is performed, and if the second electrical parameter is not within the second preset value range, step S207 is performed. In this step, the second preset value is at least smaller than the maximum voltage value or the maximum current value that the structure to be electroplated can bear, and the requirement of the electroplating speed of the second stage is met. Preferably, the minimum value of the second preset value is not less than the maximum value of the first preset value. Taking the second preset value as an example, when the structure to be electroplated is a wafer, the second preset value is preferably in a range of 6-30A.
In step S207, when the second electrical parameter is not within the second preset value range, the second test voltage is adjusted such that the second electrical parameter is within the second preset value range.
In step S208, in a second stage after step S205 or step S206, the structure to be plated is subjected to a second plating with a second test voltage, so that a second plating film is formed on the surface of the structure to be plated. The second electroplating film is used for forming an electroplating film covering the surface of the structure to be electroplated so as to improve the flatness of the surface of the structure to be electroplated.
In step S209, before the third stage, a third test voltage is provided, so that the structure to be plated has a third electrical parameter. In this step, the third electrical parameter is, for example, the voltage of the structure to be plated or the current flowing through the structure to be plated. Wherein the third test voltage is provided, for example, using a supply voltage of the electroplating apparatus.
Further, the third test voltage is adjusted according to the third electrical parameter so that the third electrical parameter is within a third preset value range, and more specifically, steps S210 to S211 are performed.
In step S210, it is determined whether the third electrical parameter is within a third preset value range, if the third electrical parameter is within the third preset value range, step S212 is performed, and if the third electrical parameter is not within the third preset value range, step S211 is performed. In this step, the third preset value is at least smaller than the maximum voltage value or the maximum current value that the structure to be electroplated can bear, and meets the requirement of the electroplating rate in the third stage. Preferably, the minimum value of the third preset value is not less than the maximum value of the second preset value. Taking the third preset value as an example of the current value, when the structure to be electroplated is a wafer, the third preset value is preferably in a range of 30-50A.
In step S211, when the third electrical parameter is not within the third preset value range, the third test voltage is adjusted such that the third electrical parameter is within the third preset value range.
In step S212, in a third stage after step S209 or step S210, a third electroplating is performed on the structure to be electroplated using a third test voltage, so as to form a third electroplated film on the surface of the structure to be electroplated. The third electroplating film is used for quickly forming an electroplating film covering the surface of the structure to be electroplated so as to save the process time.
In the embodiment, the whole electroplating process is divided into the first to third stages, before the electroplating of each stage is started, the test voltage is provided for the structure to be electroplated, and the test voltage is detected, judged and controlled, so that the electrical parameters of the structure to be electroplated are within a preset value range, the structure to be electroplated is prevented from being damaged due to the fact that the voltage is too high or the current is too large, and the stability of the electroplating process is higher. Furthermore, the whole electroplating process is divided into a first stage to a third stage, and the current flowing through the structure to be electroplated is gradually increased in the first stage to the third stage, so that the structure to be electroplated is not damaged, and the production efficiency is improved.
Preferably, before the electroplating process is performed, a pretreatment of the structure to be electroplated is further included, such as grinding, polishing, hanging, degreasing and degreasing, washing, electropolishing or chemical polishing, acid washing activation, pre-dipping, and the like, and after the electroplating process is finished, a post-treatment of the structure to be electroplated is further included, such as washing, drying, hanging, inspecting and packaging, and the like, which are not described in detail herein.
Fig. 3 shows a schematic view of an electroplating apparatus according to a first embodiment of the present invention.
As shown in fig. 3, in this embodiment, the electroplating apparatus 100 includes a power supply 110, a plating cell 120, and a feedback module 130.
The power source 110 has a positive power supply terminal, a negative power supply terminal, and a control terminal, wherein the control terminal receives the control signal provided by the feedback module 130 and adjusts a voltage value between the cathode and the anode according to the control signal, i.e., a voltage value provided by the power source 110 to the plating bath 120.
The plating tank 120 includes a tank 121, an anode 122, and a cathode 123, and is used for plating the structure to be plated 300. The anode 122 of the plating cell 120 is connected to the positive power supply terminal of the power source 110, and the cathode 123 is connected to the negative power supply terminal of the power source 110 to receive the voltage provided by the power source 110. Before the plating is performed, the plating solution 124 is placed in the tank body 121, and the structure to be plated 300 is placed in the plating solution 124. In this embodiment, the anode 122 is, for example, a metal to be plated or a noble metal, the cathode 123 is, for example, a noble metal, the plating liquid 124 is, for example, a solution containing metal ions to be plated, and the tank 121 is formed of a substance that does not react with the solution containing metal ions to be plated. Preferably, the shape of the cathode 123 is adapted to the shape of the structure to be plated 300 to reduce the contact resistance between the cathode 123 and the structure to be plated 300.
The feedback module 130 has a first end connected to the structure to be plated 300 and a second end connected to the control end of the power supply 100, and is configured to detect an electrical parameter of the structure to be plated 300 and generate a control signal according to the electrical parameter. In this embodiment, the feedback module 130 detects the voltage value of the structure to be plated 300. More specifically, one end of the feedback module 130 connected to the structure to be plated 300 has, for example, two sub-ports, and the two sub-ports are respectively connected to a first surface and a second surface of the structure to be plated to detect a voltage value of the structure to be plated 300, and the first surface and the second surface are opposite to each other.
More specifically, after detecting the electrical parameter of the structure 300 to be plated, the feedback module 130 determines whether the electrical parameter is within a preset value range, and generates a control signal according to the determined structure and sends the control signal to the power supply 110, where the preset value is smaller than the maximum voltage value or the maximum current value that the structure 300 to be plated can bear, and meets the requirement of the plating rate, where the maximum voltage value or the maximum current value that the structure 300 to be plated can bear is an intrinsic parameter of the structure 300 to be plated.
Preferably, one end of the feedback module 130 connected to the structure to be plated 300 has, for example, two sub-ports, and the two sub-ports are respectively connected to the cathode 123 and the second surface of the structure to be plated 300 to detect the voltage value of the structure to be plated 300, wherein the cathode 123 is connected to the first surface of the structure to be plated 300, so as to determine whether the contact between the cathode 123 and the structure to be plated 300 is good, when the contact between the cathode 123 and the structure to be plated 300 is good, the voltage value detected by the feedback module 130 is the voltage value on the structure to be plated 300, and when the contact between the cathode 123 and the structure to be plated 300 is poor, the voltage value detected by the feedback module 130 includes the voltage value on the poor contact point, so that the detected voltage value is significantly larger and even the same as the voltage value provided by the power source 110. Therefore, the problem of damage to the electroplating apparatus 100 and/or the structure to be electroplated 300 due to poor contact in the subsequent electroplating process can be avoided by detecting the voltage on the cathode 123 and the structure to be electroplated 300.
In this embodiment, before the electroplating device 100 performs electroplating, the power supply 110 starts to provide a test voltage, so that the structure 300 to be electroplated has a certain voltage value, after the feedback module 130 detects the voltage value, it is determined whether the voltage value is within a preset range, if so, the electroplating device 100 directly starts electroplating the structure 300 to be electroplated with the test voltage, if not, the electroplating device 100 sends a control signal to the power supply 110, the power supply 110 adjusts the voltage value of the test voltage according to the control signal until the voltage value of the test voltage is within the preset range, and then, electroplating of the structure 300 to be electroplated with the adjusted test voltage is started.
In this embodiment, the test voltage is detected, determined and controlled by the feedback module 130, so that the voltage value of the structure to be plated 300 is within the preset value range, thereby preventing the structure to be plated 300 from being damaged due to over-high voltage or over-high current, and improving the stability of the plating apparatus 100.
Fig. 4 shows a schematic view of a plating apparatus according to a second embodiment of the invention.
As shown in fig. 4, in this embodiment, the electroplating apparatus 200 includes a power supply 110, a plating cell 120, and a feedback module 230.
The power source 110 has a positive power supply terminal, a negative power supply terminal, and a control terminal, wherein the control terminal receives the control signal provided by the feedback module and adjusts a voltage value between the cathode and the anode according to the control signal, i.e., a voltage value provided by the power source 110 to the plating bath 120. The power source 110 is used for providing a test voltage and a working voltage to the electroplating bath, and the value of the working voltage is equal to the value of the adjusted test voltage.
The plating tank 120 includes a tank 121, an anode 122, and a cathode 123, and is used for plating the structure to be plated 300. The anode 122 of the plating cell 120 is connected to the positive power supply terminal of the power source 110, and the cathode 123 is connected to the negative power supply terminal of the power source 110 to receive the voltage provided by the power source 110. Before the plating is performed, the plating solution 124 is placed in the tank body 121, and the structure to be plated 300 is placed in the plating solution 124. In this embodiment, the anode 122 is, for example, a metal to be plated or a noble metal, the cathode 123 is, for example, a noble metal, the plating liquid 124 is, for example, a solution containing metal ions to be plated, and the tank 121 is formed of a substance that does not react with the solution containing metal ions to be plated. Preferably, the shape of the cathode 123 is adapted to the shape of the structure to be plated 300 to reduce the contact resistance between the cathode 123 and the structure to be plated 300.
The feedback module 230 is connected between the structure to be plated 300 and the control terminal of the power supply 200, and more specifically, the first terminal of the feedback module 230 is connected to the cathode 123, the second terminal is connected to the control terminal of the power supply 200, and the third terminal is connected to the negative power supply terminal of the power supply 200 to detect the electrical parameter of the structure to be plated 300 and generate a control signal according to the electrical parameter, and the feedback module 230 sends the control signal to the control terminal of the power supply 200 via the second terminal thereof. In this embodiment, the feedback module 230 detects a current value of the structure to be plated 300.
More specifically, after detecting the electrical parameter of the structure 300 to be plated, the feedback module 230 determines whether the electrical parameter is within a preset value range, and generates a control signal according to the determined structure and sends the control signal to the power supply 110, where the preset value is smaller than the maximum voltage value or the maximum current value that the structure 300 to be plated can bear, and meets the requirement of the plating rate, where the maximum voltage value or the maximum current value that the structure 300 to be plated can bear is an intrinsic parameter of the structure 300 to be plated.
In this embodiment, before the electroplating device 200 performs electroplating, the power supply 110 starts to provide a test voltage, so that a certain current value passes through the structure 300 to be electroplated, after the feedback module 230 detects the current value, it is determined whether the current value is within a preset range, if so, the electroplating device 200 directly starts to electroplate the structure 300 to be electroplated with the test voltage, if not, the electroplating device 200 sends a control signal to the power supply 110, the power supply 110 adjusts the current value of the test voltage according to the control signal until the current value of the test voltage is within the preset range, and then, the adjusted test voltage starts to electroplate the structure 300 to be electroplated.
In this embodiment, the feedback module 230 detects, determines and controls the test voltage, so that the current value of the structure to be plated 300 is within the preset value range, thereby preventing the structure to be plated 300 and the plating apparatus 200 from being damaged due to heat generation caused by too high voltage or too high current, and improving the stability of the plating apparatus 200.
While embodiments in accordance with the invention have been described above, these embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments described. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention and various embodiments with various modifications as are suited to the particular use contemplated. The invention is limited only by the claims and their full scope and equivalents.
Claims (10)
1. An electroplating process, comprising:
providing a first test voltage, so that the structure to be electroplated has a first electrical parameter;
adjusting the first test voltage according to the first electrical parameter to enable the first electrical parameter to be within a first preset value range; and
performing first electroplating on the structure to be electroplated by adopting the first test voltage to form a first electroplating film,
wherein the first preset value is within the bearable range of the structure to be electroplated.
2. The electroplating process of claim 1,
when the first electrical parameter is a current value, the first preset value is smaller than the maximum current value which can be borne by the structure to be electroplated,
when the first electrical parameter is a voltage value, the first preset value is smaller than the maximum voltage value which can be borne by the structure to be electroplated.
3. The plating process according to claim 1, further comprising, after forming the first plating film:
providing a second test voltage, so that the structure to be electroplated has a second electrical parameter;
adjusting the second test voltage according to the second electrical parameter to enable the second electrical parameter to be within a second preset value range; and
and carrying out secondary electroplating on the structure to be electroplated by adopting the second test voltage so as to form a second electroplating film.
4. The plating process according to claim 3, further comprising, after forming the second plating film:
providing a third test voltage so that the structure to be electroplated has a third electrical parameter;
adjusting the third test voltage according to the third electrical parameter so that the third electrical parameter is within a third preset value range; and
and carrying out third electroplating on the structure to be electroplated by adopting the third test voltage so as to form a third electroplating film.
5. The electroplating process according to claim 4, wherein the minimum value of the second preset value is not less than the maximum value of the first preset value, and the minimum value of the third preset value is not less than the maximum value of the second preset value.
6. The electroplating process according to claim 5, wherein the first preset value is in the range of 1-6A, the second preset value is in the range of 6-30A, and the third preset value is in the range of 30-50A.
7. An electroplating device is used for electroplating a structure to be electroplated, and is characterized by comprising:
the power supply is provided with a positive power supply end, a negative power supply end and a control end and is used for providing a test voltage between the positive power supply end and the negative power supply end and adjusting the test voltage according to a control signal received by the control end;
the anode of the electroplating bath is connected to the positive power supply end, the cathode of the electroplating bath provides electric connection between the negative power supply end and the structure to be electroplated, and electroplating solution contained in the bath body forms an electroplating film on the surface of the electroplating structure under the action of the test current; and
the first end of the feedback module is connected to the structure to be electroplated, and the second end of the feedback module is connected to the control end, and the feedback module is used for detecting the electrical parameters of the structure to be electroplated and providing control signals according to the electrical parameters so as to adjust the test voltage, so that the electrical parameters are within the bearable range of the structure to be electroplated.
8. The plating apparatus of claim 7, wherein the first end of the feedback module has two sub-ports connected to a first surface and a second surface of the structure to be plated, respectively, for detecting a voltage value of the structure to be plated, the first surface and the second surface being opposite to each other.
9. The plating apparatus as recited in claim 7, wherein the first end of the feedback module has two sub-ports respectively connected to a cathode and a second surface of the structure to be plated for detecting a voltage value of the structure to be plated, the cathode is located on a first surface of the structure to be plated, and the first surface and the second surface are opposite to each other.
10. The electroplating apparatus according to claim 7, wherein a first terminal of the feedback module is connected to the structure to be electroplated via the cathode, a third terminal of the feedback module is connected to the negative power supply terminal to detect a current value of the structure to be electroplated, and the feedback module provides the control signal according to the current value and sends the control signal to the control terminal via the second terminal.
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| CN202010002526.9A CN111074327A (en) | 2020-01-02 | 2020-01-02 | Electroplating process and apparatus |
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