CN111063803A - Preparation method of carbon nano tube thin film transistor - Google Patents
Preparation method of carbon nano tube thin film transistor Download PDFInfo
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- CN111063803A CN111063803A CN201911170275.9A CN201911170275A CN111063803A CN 111063803 A CN111063803 A CN 111063803A CN 201911170275 A CN201911170275 A CN 201911170275A CN 111063803 A CN111063803 A CN 111063803A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 239000002041 carbon nanotube Substances 0.000 title claims abstract description 43
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims abstract description 43
- 239000010409 thin film Substances 0.000 title claims abstract description 17
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 52
- 239000010703 silicon Substances 0.000 claims abstract description 52
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 40
- 238000001704 evaporation Methods 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 238000001259 photo etching Methods 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000010408 film Substances 0.000 claims abstract description 19
- 238000001020 plasma etching Methods 0.000 claims abstract description 14
- 238000004140 cleaning Methods 0.000 claims abstract description 13
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 7
- 239000006185 dispersion Substances 0.000 claims abstract description 5
- 238000000059 patterning Methods 0.000 claims abstract description 4
- 230000008020 evaporation Effects 0.000 claims description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims description 22
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 18
- 238000000576 coating method Methods 0.000 claims description 16
- 239000000243 solution Substances 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 239000003292 glue Substances 0.000 claims description 10
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 9
- 229910021641 deionized water Inorganic materials 0.000 claims description 9
- 238000005406 washing Methods 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 8
- 239000003929 acidic solution Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 238000002604 ultrasonography Methods 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 239000012670 alkaline solution Substances 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 238000002791 soaking Methods 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 238000005086 pumping Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 239000002270 dispersing agent Substances 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 230000002708 enhancing effect Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 3
- 239000012495 reaction gas Substances 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000007865 diluting Methods 0.000 claims description 2
- 239000007888 film coating Substances 0.000 claims description 2
- 238000009501 film coating Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000003990 capacitor Substances 0.000 abstract description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 230000005684 electric field Effects 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- -1 hydrogen ions Chemical class 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002048 multi walled nanotube Substances 0.000 description 1
- 239000005486 organic electrolyte Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 239000002109 single walled nanotube Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
A preparation method of a carbon nano tube thin film transistor comprises the following preparation steps: (1) cleaning a silicon wafer; (2) evaporating a 500nm aluminum film; (3) preparing a phosphorus-doped silicon dioxide film; (4) photoetching and patterning; (5) evaporating the metal electrode; (6) stripping off acetone; (7) transferring the CNT network; (8) defining a CNT network graph by secondary photoetching; (9) RIE reactive ion etching; (10) and acetone stripping again. The invention deposits the semiconductor CNT by the carbon nano tube dispersion method, has very high purity, solves the preparation of the carbon nano tube network channel layer, has very large capacitance when being used as a double electric layer capacitor, and realizes a transistor with low voltage and high unit capacitance.
Description
Technical Field
The invention relates to the technical field of carbon nanotube preparation, in particular to a preparation method of a carbon nanotube thin film transistor.
Background
Carbon nano-tube (CNT) has specific physical and chemical properties, is a seamless tube formed by curling graphite lamina, the carbon nano-tube is divided into single-wall carbon nano-tube and multi-wall carbon nano-tube, the thin film transistor is an important semiconductor device and has wide application in various fields such as flat panel display, memory and the like, the thin film transistor is one of field effect transistors in principle, the thin film transistor is a device formed by depositing different thin films such as a semiconductor active layer, a dielectric layer, a metal electrode layer and the like on a substrate, common thin film transistors at the present stage have inherent defects, the mobility of amorphous silicon transistors is low, the crystal process of polycrystalline silicon is complex, off-state current is large, an organic thin film transistor has poor conductivity and large contact resistance and is greatly influenced by environmental humidity and temperature, the stability is not enough, and the capacitance of the device is improved by mainly two methods, one method is to use a material with high dielectric constant as a grid medium, the other is to reduce the thickness of the gate dielectric, but if the thickness of the gate dielectric is reduced, leakage current is easy to generate, and if the gate dielectric with high dielectric constant is rotated, the method has a limit to improve the electrostatic regulation capability of the gate electrode. On the gate dielectric, many scientists research the gate dielectric made of organic materials, and because of the inside of the gate dielectric, cations in the organic electrolyte can migrate to a semiconductor interface and anions migrate to a gate interface due to an external electric field system, and mirror charges are generated at the two interfaces to form an electric double layer, so that a transistor with low voltage and high unit capacitance is realized, but the organic dielectric has the problems of instability and integration.
Disclosure of Invention
The invention provides a preparation method of a junctionless thin film transistor for solving the problems, wherein the preparation method reduces the short channel effect and the threshold voltage.
The technical scheme adopted by the invention is as follows:
a preparation method of a carbon nano tube thin film transistor comprises the following preparation steps:
(1) cleaning a silicon wafer: firstly, cleaning the silicon wafer by using an acid solution at 120 ℃ to remove organic matters and partial metals on the surface of the silicon wafer; washing with deionized water; cleaning with alkaline solution to remove ionic and flying ionic particles on the surface of the silicon wafer; cleaning with an acid solution to remove metal and an oxide layer on the surface of the silicon wafer, and finally drying the silicon wafer by using a dryer;
(2) evaporating a 500nm aluminum film: evaporating aluminum by using electron beam evaporation equipment, firstly putting a silicon wafer into an electron beam evaporation chamber, moving a crucible containing an evaporation aluminum source to an evaporation position, closing the chamber, vacuumizing the chamber to below 5Pa by using a mechanical pump, and then starting a cold pump; vacuum degree of 5 x 104When Pa is needed, a high-voltage switch is turned on, the voltage is fixed to be 8KV, an automatic film coating starting key is clicked, the condition of the cavity is observed, the pre-evaporation or pre-melting is firstly carried out, a baffle is closed in the period, after the pre-melting is finished for 3 minutes, the baffle is automatically turned on, the evaporation is started, the evaporation time is 26-30 minutes, after the evaporation is finished, the equipment automatically deflates, and the silicon wafer is taken out;
(3) preparing a phosphorus-doped silicon dioxide film: preparing a phosphorus-doped silicon dioxide film by using a plasma enhanced chemical vapor deposition method, introducing 95% of silane, 5% of phosphine and oxygen reaction gas at normal temperature, wherein the gas pressure is 5Pa, the electrode distance is 35cm, the radio frequency power Rf150W is adopted, and the deposition time is 2 hours;
(4) photoetching and patterning: coating the bottom of a cleaned silicon wafer by using a photoetching machine, rotationally coating glue, determining the thickness of the photoresist according to the rotation speed of the photoresist, using the photoresist with the common thickness of 1.2 mu m, putting the silicon wafer into a spin coater, self-sucking the silicon wafer on a bottom plate, dripping the glue, accelerating rotation, spin coating, volatilizing a solvent, then soft-baking, carrying out alignment in a vacuum hot plate machine at 95 ℃ for 100 seconds, removing the solvent in order to release the internal stress of a glue film, enhancing the adhesiveness, carrying out pre-alignment operation, and carrying out laser automatic alignment after the silicon wafer is put into self-sucking; manually aligning, visually observing a mirror, finding an alignment mark, aligning layers, then exposing, setting exposure dose and exposure time, finding a focal length, then post-baking, developing at 110 ℃ for 90 seconds in a hot plate machine, then placing into NaOH solution, keeping for 20 seconds, then washing with deionized water, and finally, post-baking at 100 ℃ for 90 seconds;
(5) evaporating the metal electrode: on the photoetching patterned substrate, evaporating Ti10nm and 50nmPd metal by using electron beams, wherein the evaporation step is the same as the step (2) for evaporating a metal Al electrode, only one metal Pd evaporation source is added, Ti is selected as an adhesion layer, and the adhesion layer of the metal electrode and the bottom is added;
(6) and (3) stripping acetone: soaking a silicon wafer in an acetone solution, dissolving a photoresist in the acetone, ultrasonically stripping metal on the photoresist along with photoetching, leaving a metal electrode on a substrate, removing residual acetone by using isopropanol, finally washing by using deionized water, and drying the silicon wafer for later use;
(7) transferring the CNT network: the method comprises the following steps of using a purchased CNT material as a solid, enabling the content of the semiconductor type CNT to reach 99.9%, carrying out dispersion treatment before use, enabling a dispersing agent to be an N-methylpyrrolidone (NMP) organic solvent, taking 1mg of the CNT mass, putting the CNT mass into 10mL of NMP, carrying out long-time high-power ultrasound in a water bath ultrasound machine, diluting the CNT mass to 0.01mg/mL, carrying out long-time ultrasound for standby, soaking for 5 hours, and observing the CNT network to be uniformly distributed by using an electron microscope;
(8) defining CNT network pattern by secondary photoetching: namely, the second photoetching plate is used for photoetching patterns at positions needing to be protected, and the photoresist at other positions is exposed, developed and removed;
(9) RIE reactive ion etching: etching by using an ANEVLARIE reactive ion etching machine to remove exposed CNT on the surface of the substrate without being protected by photoresist, putting the silicon wafer into an RIE transmission cavity, vacuumizing to below 5Pa, opening a door of a transmission cavity, mechanically holding the silicon wafer to be sent into a reaction cavity, introducing oxygen with the flow rate of 40Sccm, adjusting the pressure to 2Pa, setting the radio frequency power to be 40W, setting the time to be 15 seconds, after the pressure is stable, opening a radio frequency power supply, carrying out plasma discharge, and taking out the silicon wafer after the reaction is finished;
(10) and (3) acetone stripping again: repeating the step (6) to perform acetone stripping again.
In the step (1), the acid solution cleaned by the acid solution at 120 ℃ is sulfuric acid and hydrogen peroxide in a volume ratio of 5: 1.
The alkaline solution in the step (1) is a mixed solution of hydrogen peroxide and ammonia water.
The acidic solution cleaned by the acidic solution in the step (1) is a mixed solution of hydrochloric acid and hydrogen peroxide.
In the step (2), in the vacuum-pumping process, the coating process parameters are set, the coating speed is set to be 0.3nm/s, the coating thickness is set to be 500nm, and the vacuum-pumping time is 1 hour.
The invention has the beneficial effects that: the invention deposits the semiconductor CNT by the carbon nano tube dispersion method, has very high purity, solves the preparation of the carbon nano tube network channel layer, has very large capacitance when being used as a double electric layer capacitor, and realizes a transistor with low voltage and high unit capacitance.
Detailed Description
A preparation method of a carbon nano tube thin film transistor comprises the following preparation steps:
(1) cleaning a silicon wafer: cleaning the silicon wafer by using an acidic solution at 120 ℃, wherein the acidic solution is sulfuric acid and hydrogen peroxide with the volume ratio of 5:1, and removing organic matters and partial metals on the surface of the silicon wafer; washing with deionized water; cleaning with an alkaline solution, wherein the alkaline solution is a mixed solution of hydrogen peroxide and ammonia water, and the particles on the surface of the silicon wafer are removed and comprise ionicity and flying ionicity; cleaning with an acid solution, removing metal and an oxide layer on the surface of the silicon wafer by using a mixed solution of hydrochloric acid and hydrogen peroxide of the acid solution, and finally drying the silicon wafer by using a dryer;
(2) evaporating a 500nm aluminum film: evaporating aluminum by using electron beam evaporation equipment, firstly putting a silicon wafer into an electron beam evaporation chamber, moving a crucible containing an evaporation aluminum source to an evaporation position, closing the chamber, vacuumizing the chamber to below 5Pa by using a mechanical pump, and then starting a cold pump; setting coating process parameters in the vacuum-pumping process, setting the coating rate to be 0.3nm/s, setting the coating thickness to be 500nm, vacuumizing for 1 hour, turning on a high-voltage switch when the vacuum degree is 5 x 104Pa, fixing the voltage to be 8KV, clicking an automatic coating start key, observing the condition of a cavity, pre-evaporating or pre-melting to remove an oxide layer on the surface of the aluminum material, closing a baffle during the process, automatically opening the baffle after 3 minutes of pre-melting is finished, starting evaporation, keeping the evaporation time to be 26-30 minutes, automatically deflating equipment after the evaporation is finished, and taking out a silicon wafer;
(3) preparing a phosphorus-doped silicon dioxide film: preparing a phosphorus-doped silicon dioxide film by using a plasma enhanced chemical vapor deposition method, introducing 95% of silane, 5% of phosphine and oxygen reaction gas at normal temperature, wherein the gas pressure is 5Pa, the electrode distance is 35cm, the radio frequency power Rf150W is adopted, the deposition time is 2 hours, and the thickness of the deposited silicon oxide film is about 1.5 mu m; the phosphorus-doped silicon oxide nanoparticle film with the thickness of 1.5 mu m is prepared by using a plasma enhanced chemical vapor deposition method at room temperature, and because the prepared silicon oxide is not compact and has a rough surface and the granularity of 20nm at room temperature, the characteristic of a loose porous structure of the silicon oxide nanoparticle film is very easy to adsorb moisture in the air, and when the silicon oxide nanoparticle film is used as a gate dielectric material, under the action of an electric field, the moisture is decomposed into hydrogen ions and the hydrogen ions migrate along the direction of the electric field, the silicon oxide with the structure can be just used as a proton moving channel. The gate dielectric is adopted because protons in the silicon oxide and electrons in the carbon nano tube can form an electric double-layer capacitor, so that the realization of the low-voltage thin film transistor is possible;
(4) photoetching and patterning: coating the bottom of a cleaned silicon wafer by using a photoetching machine, rotationally coating glue, determining the thickness of the photoresist according to the rotation speed of the photoresist, using the photoresist with the common thickness of 1.2 mu m, putting the silicon wafer into a spin coater, self-sucking the silicon wafer on a bottom plate, dripping the glue, accelerating rotation, spin coating, volatilizing a solvent, then soft-baking, carrying out alignment in a vacuum hot plate machine at 95 ℃ for 100 seconds, removing the solvent in order to release the internal stress of a glue film, enhancing the adhesiveness, carrying out pre-alignment operation, and carrying out laser automatic alignment after the silicon wafer is put into self-sucking; manually aligning, visually aligning an alignment mark by a mirror, aligning layers, then exposing, setting exposure dose and exposure time, aligning focal length, then baking, heating a hot plate machine at 110 ℃ for 90 seconds, easily dissolving standing wave reduction and excitation glue reaction in a developing solution, developing, putting into a NaOH solution, keeping for 20 seconds, washing with deionized water, and finally baking at 100 ℃ for 90 seconds to evaporate a solvent in the photoresist and increase adhesion, reduce standing wave effect and firm film;
(5) evaporating the metal electrode: on a photoetching patterned substrate, Ti10nm and 50nmPd metals are evaporated by electron beams, the evaporation step is the same as the step (2) of evaporating a metal Al electrode, only one more metal Pd evaporation source is used, Ti is selected as an adhesion layer, the metal electrode and the adhesion layer of the bottom sediment are added, Pd metal is selected as an electrode material, and ohmic contact is easily formed considering that the work functions of metal Pd and a carbon nano tube are close;
(6) and (3) stripping acetone: soaking a silicon wafer in an acetone solution, dissolving a photoresist in the acetone, ultrasonically stripping metal on the photoresist along with photoetching, leaving a metal electrode on a substrate, removing residual acetone by using isopropanol, finally washing by using deionized water, and drying the silicon wafer for later use;
(7) transferring the CNT network: the method has the advantages that the purchased CNT material is solid, the content of the semiconductor CNT reaches 99.9 percent, the dispersion treatment is carried out before the use, the used dispersing agent is N-methylpyrrolidone organic solvent NMP, the method has the advantages of good stability and high repeatability, the CNT mass of 1mg is taken and put into 10mL of NMP, the CNT material is subjected to long-time high-power ultrasound in a water bath ultrasonic machine, the CNT material is diluted to the concentration of the CNT of 0.01mg/mL, the CNT material is subjected to long-time ultrasound for standby, in order to ensure the continuity and the uniformity of a CNT network, the soaking time is 5 hours, and the CNT network is uniformly distributed by the observation;
(8) defining CNT network pattern by secondary photoetching: namely, the second photoetching plate is used for photoetching a pattern at a position needing to be protected, and photoresist at other positions is exposed and developed to remove so as to protect the CNT network between the two metal electrodes, and the CNT network is exposed at the surface of the substrate at other positions;
(9) RIE reactive ion etching: etching by using an ANEVLARIE reactive ion etching machine to remove exposed CNT on the surface of the substrate without being protected by photoresist, putting the silicon wafer into an RIE transmission cavity, vacuumizing to below 5Pa, opening a door of a transmission cavity, mechanically holding the silicon wafer to be sent into a reaction cavity, introducing oxygen with the flow rate of 40Sccm, adjusting the pressure to 2Pa, setting the radio frequency power to be 40W, setting the time to be 15 seconds, after the pressure is stable, opening a radio frequency power supply, carrying out plasma discharge, and taking out the silicon wafer after the reaction is finished;
(10) and (3) stripping acetone: repeating the step (6) to perform acetone stripping again.
While one embodiment of the present invention has been described in detail, the description is only a preferred embodiment of the present invention and should not be taken as limiting the scope of the invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (5)
1. A preparation method of a carbon nano tube thin film transistor is characterized by comprising the following preparation steps:
(1) cleaning a silicon wafer: firstly, cleaning the silicon wafer by using an acid solution at 120 ℃ to remove organic matters and partial metals on the surface of the silicon wafer; washing with deionized water; cleaning with alkaline solution to remove ionic and flying ionic particles on the surface of the silicon wafer; cleaning with an acid solution to remove metal and an oxide layer on the surface of the silicon wafer, and finally drying the silicon wafer by using a dryer;
(2) evaporating a 500nm aluminum film: evaporating aluminum by using electron beam evaporation equipment, firstly, putting a silicon wafer into an electron beam evaporation chamber, and moving a crucible containing an evaporation aluminum sourceClosing the chamber when the crucible reaches an evaporation position, vacuumizing the chamber to below 5Pa by using a mechanical pump, and then starting a cold pump; vacuum degree of 5 x 104When Pa is needed, a high-voltage switch is turned on, the voltage is fixed to be 8KV, an automatic film coating starting key is clicked, the condition of the cavity is observed, the pre-evaporation or pre-melting is firstly carried out, a baffle is closed in the period, after the pre-melting is finished for 3 minutes, the baffle is automatically turned on, the evaporation is started, the evaporation time is 26-30 minutes, after the evaporation is finished, the equipment automatically deflates, and the silicon wafer is taken out;
(3) preparing a phosphorus-doped silicon dioxide film: preparing a phosphorus-doped silicon dioxide film by using a plasma enhanced chemical vapor deposition method, introducing 95% of silane, 5% of phosphine and oxygen reaction gas at normal temperature, wherein the gas pressure is 5Pa, the electrode distance is 35cm, the radio frequency power Rf150W is adopted, and the deposition time is 2 hours;
(4) photoetching and patterning: coating the bottom of a cleaned silicon wafer by using a photoetching machine, rotationally coating glue, determining the thickness of the photoresist according to the rotation speed of the photoresist, using the photoresist with the common thickness of 1.2 mu m, putting the silicon wafer into a spin coater, self-sucking the silicon wafer on a bottom plate, dripping the glue, accelerating rotation, spin coating, volatilizing a solvent, then soft-baking, carrying out alignment in a vacuum hot plate machine at 95 ℃ for 100 seconds, removing the solvent in order to release the internal stress of a glue film, enhancing the adhesiveness, carrying out pre-alignment operation, and carrying out laser automatic alignment after the silicon wafer is put into self-sucking; manually aligning, visually observing a mirror, finding an alignment mark, aligning layers, then exposing, setting exposure dose and exposure time, finding a focal length, then post-baking, developing at 110 ℃ for 90 seconds in a hot plate machine, then placing into NaOH solution, keeping for 20 seconds, then washing with deionized water, and finally, post-baking at 100 ℃ for 90 seconds;
(5) evaporating the metal electrode: on the photoetching patterned substrate, evaporating Ti10nm and 50nmPd metal by using electron beams, wherein the evaporation step is the same as the step (2) for evaporating a metal Al electrode, only one metal Pd evaporation source is added, Ti is selected as an adhesion layer, and the adhesion layer of the metal electrode and the bottom is added;
(6) and (3) stripping acetone: soaking a silicon wafer in an acetone solution, dissolving a photoresist in the acetone, ultrasonically stripping metal on the photoresist along with photoetching, leaving a metal electrode on a substrate, removing residual acetone by using isopropanol, finally washing by using deionized water, and drying the silicon wafer for later use;
(7) transferring the CNT network: the method comprises the following steps of using a purchased CNT material as a solid, enabling the content of the semiconductor type CNT to reach 99.9%, carrying out dispersion treatment before use, enabling a dispersing agent to be an N-methylpyrrolidone (NMP) organic solvent, taking 1mg of the CNT mass, putting the CNT mass into 10mL of NMP, carrying out long-time high-power ultrasound in a water bath ultrasound machine, diluting the CNT mass to 0.01mg/mL, carrying out long-time ultrasound for standby, soaking for 5 hours, and observing the CNT network to be uniformly distributed by using an electron microscope;
(8) defining a CNT network pattern by secondary photoetching, namely, carrying out alignment, photoetching the pattern at a position needing to be protected by using a second photoetching plate, and exposing and developing the photoresist at other positions to remove;
(9) RIE reactive ion etching, namely etching by using an ANEVLARIE reactive ion etching machine to remove exposed CNT on the surface of the substrate without being protected by the photoresist, putting the silicon wafer into an RIE transmission cavity, vacuumizing to below 5Pa, opening the door of the transmission cavity, mechanically holding the silicon wafer into the reaction cavity, introducing oxygen with the flow rate of 40Sccm, adjusting the pressure to 2Pa, setting the radio frequency power to be 40W, setting the time to be 15 seconds, after the pressure is stable, turning on a radio frequency power supply, carrying out plasma discharge, and after the reaction is finished, taking out the silicon wafer;
(10) and (3) stripping acetone: repeating the step (6) to perform acetone stripping again.
2. The method for preparing a carbon nanotube thin film transistor according to claim 1, wherein the acidic solution cleaned with the acidic solution at 120 ℃ in the step (1) is sulfuric acid and hydrogen peroxide in a volume ratio of 5: 1.
3. The method of claim 1, wherein the alkaline solution in step (1) is a mixture of hydrogen peroxide and ammonia water.
4. The method for manufacturing a carbon nanotube thin film transistor according to claim 1, wherein the acidic solution to be cleaned with the acidic solution in the step (1) is a mixed solution of hydrochloric acid and hydrogen peroxide.
5. The method according to claim 1, wherein in the step (2), during the vacuum-pumping process, the parameters of the coating process are set, the coating rate is set to 0.3nm/s, the coating thickness is set to 500nm, and the vacuum-pumping time is 1 hour.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112875640A (en) * | 2021-01-26 | 2021-06-01 | 河源市众拓光电科技有限公司 | Preparation method of patterned Ag film |
| CN115709986A (en) * | 2021-08-23 | 2023-02-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | High-density oriented carbon nanotube film and preparation method and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112875640A (en) * | 2021-01-26 | 2021-06-01 | 河源市众拓光电科技有限公司 | Preparation method of patterned Ag film |
| CN115709986A (en) * | 2021-08-23 | 2023-02-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | High-density oriented carbon nanotube film and preparation method and application thereof |
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