CN111052317B - 静电基板支撑件几何形状的抛光 - Google Patents

静电基板支撑件几何形状的抛光 Download PDF

Info

Publication number
CN111052317B
CN111052317B CN201880057686.4A CN201880057686A CN111052317B CN 111052317 B CN111052317 B CN 111052317B CN 201880057686 A CN201880057686 A CN 201880057686A CN 111052317 B CN111052317 B CN 111052317B
Authority
CN
China
Prior art keywords
substrate support
polishing
substrate
patterned surface
polishing pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201880057686.4A
Other languages
English (en)
Other versions
CN111052317A (zh
Inventor
小温德尔·G·博伊德
J·Z·何
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN111052317A publication Critical patent/CN111052317A/zh
Application granted granted Critical
Publication of CN111052317B publication Critical patent/CN111052317B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • B24B37/14—Lapping plates for working plane surfaces characterised by the composition or properties of the plate materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

本文中提供待使用于等离子体辅助半导体制造腔室或等离子体增强半导体制造腔室中的抛光静电卡紧(ESC)基板支撑件的图案化表面的方法。具体地，本文中描述的实施例提供抛光方法，所述抛光方法将升高特征的边缘圆化并去毛边并且从图案化基板支撑件的非基板接触表面移除介电材料，以减少和其相关联的缺陷。

Description

静电基板支撑件几何形状的抛光
背景技术
技术领域
本文中描述的实施例总的来说涉及使用于半导体器件制造工艺中的制品的制造，具体而言，涉及制造用于在处理腔室中使用的静电卡盘(ESC)基板支撑件的方法。
相关技术的描述
静电卡盘(ESC)基板支撑件常用于半导体制造中，以通过静电卡紧(ESC)力将基板固定地保持在处理腔室的处理容积内的处理位置中。卡紧力为提供至卡紧电极(所述卡紧电极嵌入基板支撑件的介电材料中)的电压与基板(所述基板设置于介电材料的表面上)之间的势的函数。
通常，使用基板支撑件以通过基板支撑件的介电材料与设置于其上的基板之间的热传递来维持基板处于所期望的温度，或处于所期望的温度范围内。例如，一些基板支撑件包括嵌入在基板支撑件的介电材料中的加热元件，使用所述加热元件以加热基板支撑件，并且由此在处理之前加热基板至所期望的温度和/或在处理期间维持基板处于所期望的温度。针对其他半导体制造工艺，期望在处理基板期间冷却基板，并且基板支撑件热耦合至冷却基底，所述冷却基底典型地包括一个或多个冷却通道，所述一个或多个冷却通道具有流经所述一个或多个冷却通道的冷却流体。在一些情况中，基板支撑件包括加热元件和冷却通道两者，由此可精确地控制对基板支撑件温度的控制。
典型地，处理腔室的处理容积中的低压大气导致基板支撑件的介电材料与基板之间的不良的热传导，由此减少基板支撑件于加热及冷却基板的有效性。因此，在一些工艺中，热传导惰性气体(典型为氦)被导入设置于基板的非器件侧表面与基板支撑件之间的背侧容积，以改进基板的非器件侧表面与基板支撑件之间的热传递。由基板支撑件的一个或多个凹陷表面、从所述一个或多个凹陷表面延伸的一个或多个升高特征、以及设置于一个或多个升高特征的表面上的基板的非器件侧表面来界定背侧容积。典型地，基板支撑件的升高特征包括同心地设置于基板支撑件上的一个或多个外密封带，且从(多个)凹陷表面延伸的多个突起将基板与基板支撑件的一个或多个凹陷表面隔开。在一些实施例中，升高特征进一步包括多个内密封带，多个内密封带中的每一者同心地绕相应的升降杆开口设置，在基板支撑件的介电材料中形成所述升降杆开口。
基板与图案化表面的升高特征之间的接触频繁地造成基板的非器件侧表面上或非器件侧表面中的不期望的刮痕、和其间的相应接触表面处的基板支撑件的不期望的磨损。典型地，基板非器件侧表面上的刮痕和/或基板支撑件的介电材料的磨损在它们相应的基板接触表面中的每一者的边缘处为特别明显的。由基板支撑件的刮痕和/或磨损所产生的颗粒材料最后经由后续的掌控操作和/或处理操作从基板支撑件和/或基板的非器件侧表面传递到基板的器件侧表面和/或其他基板，由此最终压低了基板的器件良率。
相应地，本领域中需要改进的制造基板支撑件的方法，以减少基板的接触表面处的基板的非器件侧表面的不期望的刮痕以及基板支撑件的不期望的磨损。
发明内容
本文中描述的实施例总的来说涉及使用于半导体制造工艺中的制品的制造，具体地，涉及制造在等离子体辅助半导体工艺或等离子体增强半导体工艺期间使用于处理腔室中的静电卡盘(ESC)基板支撑件的方法。
在一个实施例中，提供抛光基板支撑件的方法。所述方法包括：旋转抛光工作台，所述抛光工作台具有安装于所述抛光工作台上的抛光垫；将抛光流体应用到所述抛光垫；以抛光下压力促使所述基板支撑件的图案化表面抵靠所述抛光垫；以及抛光所述基板支撑件的所述图案化表面。抛光所述基板支撑件的所述图案化表面包括：在面对基板表面处从多个突起移除第一厚度的材料；以及从所述多个突起的一个或多个侧面移除第二厚度的材料，其中所述第二厚度等于或大于约所述第一厚度。
本文中，所述基板支撑件的所述图案化表面包括从一个或多个凹陷表面延伸的多个突起，且所述图案化表面的基板接触表面积小于待设置于所述基板支撑件上的基板的非器件侧表面积的约20％。
在另一实施例中，提供抛光基板支撑件的图案化表面的方法。所述方法包括：旋转抛光工作台，所述抛光工作台具有安装于所述抛光工作台上的抛光垫；以及将抛光流体应用到所述抛光垫。本文中，所述抛光流体包括具有小于约10μm的平均直径的金刚石磨料。所述方法进一步包括：以抛光下压力来促使所述基板支撑件的所述图案化表面抵靠所述抛光垫。本文中，所述基板支撑件的所述图案化表面包括从所述基板支撑件的一个或多个凹陷表面延伸的多个升高特征，其中所述升高特征的基板接触表面积小于待设置于所述基板支撑件上的基板的非器件侧表面积的约20％。所述方法进一步包括：抛光所述基板支撑件的所述图案化表面以从所述升高特征的基板接触表面移除大于约0.5μm的材料。
在另一实施例中，提供抛光基板支撑件的图案化表面的方法。所述方法包括：旋转抛光工作台，所述抛光工作台具有安装于所述抛光工作台上的抛光垫；以及将抛光流体应用到所述抛光垫。本文中，所述抛光流体包括具有小于约10μm的平均直径的金刚石磨料。所述方法进一步包括：以抛光下压力来促使所述基板支撑件的所述图案化表面抵靠所述抛光垫。本文中，所述基板支撑件的所述图案化表面包括从所述基板支撑件的一个或多个凹陷表面延伸的多个圆柱形突起，其中所述多个圆柱形突起的上表面的表面积小于待设置于所述基板支撑件上的基板的非器件侧表面积的约20％。本文中，所述多个圆柱形突起具有介于约500μm与约5mm之间的平均直径，且所述图案化表面由介电材料形成，从由以下项所组成的群组来选择所述介电材料：氧化铝(Al2O3)、氮化铝(AlN)、氧化钛(TiO)、氮化钛(TiN)、氧化钇(Y2O3)、以及上述项的组合。所述方法进一步包括：抛光所述基板支撑件的所述图案化表面，以从所述多个圆柱形突起中的每一者的上表面和侧面移除大于约0.5μm的介电材料，且从所述一个或多个凹陷表面移除大于约0.1μm的介电材料。
附图说明
以可详细理解本公开内容的上述特征的方式，可通过参考实施例来获得对本公开内容的更具体描述(本公开内容在上文中简短总结)，其中一些实施例示于附图中。然而，应注意，附图仅示出本公开内容的典型的实施例，且因此不应被视为限制其范围，因为本公开内容可以允许其他等效的实施例。
图1为处理腔室的示意性截面视图，所述处理腔室具有设置于所述处理腔室中的基板支撑件，其中所述基板支撑件根据本文中描述的实施例来形成。
图2A为根据本文中描述的实施例而形成的基板支撑件组件的示意性等距视图。
图2B为图2A中所示的基板支撑件组件的一部分的特写等距截面视图。
图3A为根据一个实施例的抛光基板支撑件的图案化表面的方法的流程图。
图3B为用于实践图3A中所述的方法的抛光系统350的示例的示意性截面视图。
图4A示出使用光刻(photolithography)/喷珠(bead blasting)处理来形成的基板支撑件的图案化表面的部分的表面粗糙度分布400。
图4B示出在根据本文中描述的方法抛光之后的图4A中示出的图案化表面的相同部分的表面粗糙度分布401。
具体实施方式
本文中描述的实施例总的来说涉及使用于半导体制造工艺中的制品的制造，具体地，涉及制造使用于处理腔室中以在处理期间保持和固定基板至基板支撑件的静电卡盘(ESC)基板支撑件的方法。
常规上，使用负掩模/喷珠工艺来形成ESC基板支撑件的图案化表面，其中经由图案化掩模中的开口来对基板支撑件的表面进行喷珠。由喷珠工艺所产生的升高特征典型地具有显著边缘，需要在处理腔室中安装基板支撑件之前进行圆化和/或去毛边。相关联于低接触面积(具有基板)基板支撑件，在高接触面积(具有基板)基板支撑件上将所述边缘圆化和去毛边的常规方法不会从基板支撑件的非基板接触表面移除(或不会从基板支撑件的非基板接触表面移除充足)材料，以最小化刮痕、磨损和颗粒传送。本文中描述的实施例提供抛光方法以将升高特征的边缘圆化和去毛边且从图案化基板支撑件的非基板接触表面移除介电材料，以减少与其相关联的缺陷。
图1为处理腔室的示意性截面视图，所述处理腔室具有设置于所述处理腔室中的基板支撑件，其中所述基板支撑件根据本文描述的实施例而形成。此处，处理腔室100为等离子体处理腔室，诸如等离子体蚀刻腔室、等离子体增强沉积腔室，例如等离子体增强化学气相沉积(PECVD)腔室或等离子体增强原子层沉积(PEALD)腔室、等离子体处理腔室、或基于等离子体的离子植入腔室，例如等离子体掺杂(PLAD)腔室。然而，可与使用具有包括升高特征和凹陷表面的图案化表面的基板支撑件的任何处理腔室或处理系统一起使用本文中描述的基板支撑件。
本文中，所述处理腔室100为CVD处理腔室的示意性代表且其包括界定处理容积120的腔室盖103、一个或多个侧壁102、和腔室底部104。气体分配器112(通常称为喷头)具有多个开口118设置穿过气体分配器112，气体分配器112设置于腔室盖103中且用于均匀分配来自气体入口114的处理气体进入处理容积120。气体分配器112耦合至第一功率供应142，诸如RF或VHF功率供应，第一功率供应142供应功率以点燃和维持处理等离子体135，处理等离子体135由处理气体经由与处理气体电容耦合而组成。处理容积120流体地耦合至腔室排放，诸如经由真空出口113至一个或多个专用真空阀，真空出口113维持处理容积120处于低于大气条件且从真空出口113将处理和其他气体排气。设置于处理容积120中的基板支撑件组件200设置于支撑轴124上，支撑轴124密封地穿过腔室底部104延伸。第一控制器140控制升降件(例如，线性电机、步进电机及齿轮、或其他机械)以控制支撑轴124和设置于其上的基板支撑件组件200的上升和下降，以促进基板115相对于处理腔室100的处理容积120的放置和移除。
基板115经由一个或多个侧壁102中的开口126被装载进入处理容积120或者从处理容积120移除，常规上在基板115处理期间使用门或阀(未示出)来密封开口126。升降杆环圈134上方设置的多个升降杆136(但是多个升降杆136可与升降杆环圈134接合)可移动地经由基板支撑件组件200设置以促进传送基板115至基板支撑件组件200或从基板支撑件组件200传送基板115。升降杆环圈134耦合至密封地延伸穿过腔室底部104的升降环圈轴131，通过致动器130升高和降低升降杆环圈134。在升降杆环圈134位于升高位置时，从下方接触且移动多个升降杆136以在基板支撑件203的图案化表面201上方延伸，从而从基板支撑件203升高基板115，且通过机器人掌控器来实现对基板115的存取。当升降杆环圈134位于降低位置时，多个升降杆136的顶部与图案化表面201齐平或低于图案化表面201，且基板安置于图案化表面201的升高特征上。
典型地，基板支撑件组件200包括冷却基底125和热耦合至冷却基底125且设置于冷却基底125上的基板支撑件203。使用冷却基底125以在处理期间调节基板支撑件203和设置于基板支撑件203上的基板115的温度。本文中，冷却基底125包括设置于冷却基底125中的一个或多个流体管道137，一个或多个流体管道137流体地耦合至冷却剂源133且与冷却剂源133流体连通，冷却剂源133为诸如制冷剂源或水源。典型地，冷却基底125由耐腐蚀热传导材料形成，诸如耐腐蚀金属，例如铝、铝合金、或不锈钢，且使用粘附剂或机械构件热耦合至基板支撑件203。
此处，基板支撑件203由介电材料形成，诸如成块烧结陶瓷材料，诸如碳化硅(SiC)或金属氧化物或金属氮化物陶瓷材料，例如氧化铝(Al2O3)、氮化铝(AlN)、氧化钛(TiO)、氮化钛(TiN)、氧化钇(Y2O3)、上述的混和物、以及上述的组合。典型地，基板支撑件203包括嵌入基板支撑件203的介电材料中的卡紧电极227，卡紧电极227通过提供基板115与卡紧电极227之间的势来将基板115固定到基板支撑件203。基板115与卡紧电极227之间的势导致其间的静电卡紧(ESC)力。本文中的卡紧电极227电耦合至第二功率供应156，诸如DC功率供应，第二功率供应156将介于约-5000V与约+5000之间的卡紧电压提供到卡紧电极227。提供惰性热传导气体(典型为氦)至基板支撑件203的凹陷表面以及设置于其上的基板115的非器件侧表面之间设置的背侧容积117。典型地，经由多个气体端口223(图2A至图2B中所示)将惰性热传导气体提供至背侧容积117，所述多个气体端口223在基板支撑件203中形成且与背侧气体供应146流体连通。热传导惰性气体将基板115热耦合至基板支撑件203且增加基板115与基板支撑件203之间的热传递。本文中，使用第二控制器150以在基板115的等离子体处理期间维持背侧容积117中的气体压力介于约1托(Torr)与约100托之间，诸如约1托与约20托之间。在一些实施例中，基板支撑件组件200进一步包括一个或多个传感器(未示出)，所述一个或多个传感器在将卡紧力施加到基板115时测量基板115的偏转。将基板115的偏转通信至第二控制器150，第二控制器150确定基板115上的卡紧力并且相应地调整提供到卡紧电极227的卡紧电压。
图2A为基板支撑件组件200的示意性等距视图，基板支撑件组件200根据本文描述的实施例而形成。图2B为图2A中所示的基板支撑件组件200的一部分的特写等距截面视图。此处，基板支撑件203包括具有从一个或多个凹陷表面216延伸的多个升高特征的图案化表面201。本文中的升高特征包括多个突起217、一个或多个外密封带(诸如第二外密封带215和第一外密封带213)、和多个内密封带219。此处，第一外密封带213同心地绕图案化表面201的中心来设置并且接近其外周边，且第二外密封带215同心地绕图案化表面201的中心来设置并接近第一外密封带213且在第一外密封带213径向向内。次要密封带219中的每一者同轴地绕在基板支撑件203的介电材料中形成的相应的升降杆开口221来设置。在基板115被卡紧到基板支撑件203时，升高特征和一个或多个凹陷表面216以及基板115的非器件侧表面界定了背侧容积117的边界表面(图1中所示)。
典型地，使用光刻和喷珠工艺来形成图案化表面201，其中图案被暴露至设置于基板支撑件203的介电表面上的光刻胶涂层上。接着，将光刻胶暴露于电磁辐射或热辐射以将所暴露的图案硬化成光刻胶，其中硬化的光刻胶提供对基板支撑件203表面下方的保护。移除未经暴露的光刻胶，且通过对基板支撑件203的未受保护的介电材料进行喷珠直到多个升高特征从基板支撑件203延伸所期望的第一高度(未示出)，来形成一个或多个凹陷表面216。使用上述方法来形成图案化表面201导致多个升高特征的基板接触表面229的不期望的显著边缘，且导致其间形成的一个或多个凹陷表面216的介电材料的增加的表面粗糙度。升高特征的基板接触表面229上的尖锐边缘(相对于圆化的边缘)对卡紧和解卡紧基板期间基板的非器件侧表面上的不期望的刮痕的数量和严重性贡献了更多，且更倾向于基板支撑件203的介电材料的不期望的磨损。一个或多个凹陷表面216的粗糙的经喷珠的表面不期望地困住可能在基板115的卸载和新的基板115的装载之间经由处理腔室100的真空出口113移除的颗粒。接着，一旦基板115被卡紧至基板支撑件203，那么被困住的颗粒可能不期望地被传递至基板115的非器件侧表面。因此，根据本文描述的方法抛光图案化表面201，以圆化升高特征的边缘，并且抛光及平滑化图案化表面201的非基板接触表面，使得升高特征从凹陷表面216延伸了所期望的第二高度H。
如图2B中所示，本文中的多个突起217包括多个基本上圆柱形的台面，所述多个基本上圆柱形的台面具有介于约500μm与约5mm之间的平均直径D1、介于约5mm与约20mm之间的中心至中心(CTC)间隔D2、和介于约3μm与约700μm之间的高度H，诸如介于约3μm与约100μm之间，诸如介于约3μm与约50μm之间，诸如介于约3μm与约20μm之间，或大于约3μm。一个或多个外密封带包括同心地设置于基板支撑件203上且接近基板支撑件203的外周边的至少第一外密封带213。在一些实施例中，一个或多个主要密封带包括同心地设置于基板支撑件203上的第二外密封带215，第二外密封带215径向向内且接近第一外密封带213。第一外密封带和第二外密封带213和215典型地具有基本上矩形的横截面剖面，具有高度H和介于约500μm与约5mm之间的宽度。多个内密封带219(多个内密封带219中的每一者环绕每一升降杆开口)典型地具有介于内直径与外直径之间的有高度H和宽度W的基本上矩形的横截面剖面。多个突起217至少在基板115被卡紧至基板支撑件203时保持基板115与凹陷表面216隔开，以允许热传导惰性气体(此处为氦)从气体入口流动遍及基板115与基板支撑件203之间的背侧容积117。密封带213、215以及219在基板115被卡紧至基板支撑件203时防止或显著减小气体从背侧容积117流动进入处理腔室100的处理容积120(图1中所示)。多个突起217的基本上圆柱形和密封带213、215和219的基本上矩形横截面形包括具有根据本文描述的方法所形成的圆化的边缘229a的形状。在其他实施例中，多个突起217包括任何其他合适的形状，诸如正方形或矩形块、圆锥形、楔形、金字塔形、柱形、圆柱墩、或其他不同大小的突起、或上述的组合，所述其他合适的形状延伸超出凹陷表面216以支撑基板115并且使用任何合适的方法来形成。
在一些实施例中，基板支撑件203的基板接触表面229与设置于其上的基板的非器件侧表面之间的接触面积小于约30％，诸如小于约20％，诸如小于约15％，小于约10％，小于约5％，例如小于约3％。减少基板115的非器件侧表面与图案化表面201之间的接触面积具有所期望的效应：减少暴露于可造成刮痕的条件下的非器件侧基板表面，刮痕诸如由于卡紧和去卡紧基板115期间其间的物理接触而引起。然而，减少基板115的非器件侧表面与图案化表面201之间的接触面积增加了其间在相同的或基本上相同的卡紧力条件下于基板的接触表面229处的接触力。增加的接触力导致相较于配置用于较高接触面积的基板支撑件而言基板115的非器件侧表面中不期望的更深的刮痕和/或不期望的增加的基板支撑件203的基板接触表面229的磨损。特定地，由于上文讨论的理由，增加的接触力导致基板115的非器件侧表面上不期望地更深的刮痕和/或其界面边缘处增加的基板接触表面229的磨损。进一步地，从刮痕和/或磨损所产生的被困在基板支撑件203的粗糙的经喷珠的非基板接触表面中的颗粒可接着从基板支撑件203传递至后续设置于基板支撑件203上的基板。进一步地，基板支撑件203的介电材料的粗糙的经喷珠的表面增加了基板支撑件203对物理及化学腐蚀的敏感性，且也增加了清理基板支撑件203以移除被困于基板支撑件203上的颗粒的困难度。因此，在图3A中概述的圆化基板接触表面229的边缘229a以及抛光基板支撑件的非基板接触表面的方法。
图3A为根据一个实施例的抛光基板支撑件的图案化表面的方法的流程图。图3B为抛光系统350的示例的示意性截面视图，抛光系统350用以实践图3A中所述的方法。在一个实施例中，抛光系统为从伊利诺伊州(Illinois)的Engis Corp.of Wheeling可获得的研磨及抛光系统中的一者。本文中的抛光系统350包括工作台352，工作台352具有设置于工作台352上的抛光垫353以及面对工作台352和抛光垫353的载具355。载具355包括背板356，背板356用于在基板支撑件203上施加力，以促使基板支撑件203的图案化表面201抵靠抛光垫353的抛光表面。在一些实施例中，载具355进一步包括绕基板支撑件203设置的载具环357，诸如陶瓷载具环。典型地，载具355和/或抛光系统350经配置以在载具环357上施加单独的下压力。此处，工作台352具有比待抛光的基板支撑件203的直径大的直径，诸如大于经配置以支撑200mm直径基板的基板支撑件的直径，或大于经配置以支撑300mm直径基板的基板支撑件的直径，或大于约200mm的直径，或大于约300mm，大于约400mm，大于约500mm，大于约600mm，例如大于约700mm。
在动作305处，方法300包括旋转抛光工作台，例如图3B中所示的工作台352，工作台352具有安装于工作台352上的抛光垫353。典型地，抛光垫353为软抛光垫，所述软抛光垫具有高的孔隙度或绒毛长度，使得在方法300期间不会不期望地平面化图案化表面201。在一个实施例中，抛光垫包括高绒毛的多孔性聚氨酯垫材料，具有小于约70shore A的硬度，诸如小于约60shore A。在一些实施例中，多孔性聚氨酯垫材料具有大于约50％的孔洞容积(开口孔洞的容积百分比)，例如大于约60％。在一些实施例中，抛光垫包括聚氨酯浸渍毛毡材料，具有小于约70shore D的硬度计的硬度，例如小于约60shore D或小于约80asker C，例如小于70asker C。在一些实施例中，抛光垫353的抛光表面具有介于约300μm与约1mm之间的绒毛长度，诸如大于约300μm，大于约400μm，例如介于约400μm与约1mm之间。在一些实施例中，抛光垫353具有环形，且载具355和/或设置于其中的基板支撑件203的至少一部分在抛光期间与环形的内直径重叠，以控制抛光期间图案化表面201的边缘处的材料移除率。本文中，抛光工作台352的旋转速度介于约10rpm与约90rpm之间，诸如介于约20rpm与约75rpm之间。
在动作310处，方法300进一步包括将抛光流体366应用至抛光垫353。如图3B中所示，抛光系统350包括定位于工作台352之上的抛光流体分配器368以将抛光流体366输送到抛光垫353的抛光表面。典型地，抛光流体包括分配于可溶于水的载具流体中的金刚石磨料。本文中，金刚石磨料具有小于约10μm的平均直径，诸如小于约5μm，例如介于50nm与5μm之间，诸如介于约100nm与约3μm之间，或介于约500nm与约2μm之间，例如约1μm。
在动作315处，方法300进一步包括使用抛光下压力促使基板支撑件203的图案化表面201抵靠抛光垫353。图3B中所示的载具355经配置以在背板356上施加第一下压力(基板支撑件203设置于背板356下方)，同时绕第一轴364在第一方向上旋转，且由此促使图案化表面201抵靠抛光垫353。此处，载具355进一步经配置以在载具环357上施加第二下压力，以促使载具环357抵靠抛光垫353。典型地，工作台352和设置于工作台352上的抛光垫353绕第二轴354在与第一方向相反的第二方向上旋转。在一些实施例中，旋转的载具355和设置于载具355中的基板支撑件203从抛光垫353的内直径来回扫掠至抛光垫353的外直径。在一个实施例中，载具355和基板支撑件203以介于20与50rpm之间的速度旋转，背板356和设置于背板356下方的基板支撑件203上的第一下压力介于约0lbs与约50lbs之间，且载具环357上的第二下压力介于约25lbs与约50lbs之间。本文中，下压力用于抛光经配置以支撑300mm基板的基板支撑件203。应使用合适的缩放以用于抛光经配置以支撑不同大小基板的基板支撑件。
在动作320处，方法300进一步包括抛光基板支撑件的图案化表面。在本文中的实施例中，抛光基板支撑件203的图案化表面201包括：从升高特征的表面移除第一厚度的介电材料并期望地圆化其角落；从升高特征的侧面移除第二厚度的介电材料；以及从一个或多个凹陷表面移除第三厚度的介电材料并期望地减低其表面粗糙度。本文中，在动作320处从升高特征的表面移除的第一厚度的介电材料为介于约0.5μm与约4μm之间，诸如大于约0.5μm，诸如大于约0.75μm，例如大于约1μm，或介于约1μm与约4μm之间。从升高特征的侧面移除的第二厚度的介电材料为介于约0.5μm与约10μm之间，诸如大于约0.5μm，例如大于约1μm。从一个或多个凹陷表面移除的第三厚度的介电材料为介于约0.1μm与约4μm之间，诸如大于约0.1μm。典型地，作为结果，一个或多个凹陷表面的表面粗糙度从介于约0.4μm Ra与约0.8μm Ra之间的范围降低至介于约0.05μm Ra与约0.2μm Ra之间的范围，或小于约0.2μmRa。典型地，使用方法300来抛光图案化表面持续介于约10分钟与约1小时之间，诸如介于约15分钟与45分钟之间，或者大于10分钟。
图4A示出使用光刻/喷珠工艺从而形成的基板支撑件的图案化表面的一部分的表面粗糙度的分布400。图4B示出根据本文描述的方法进行抛光之后的图案化表面的相同部分的表面粗糙度的分布401。在图4A至图4B中，从圆柱突起217的上表面移除约1μm的材料，以将预先抛光的突起217a的高度从抛光约30分钟之前的约14μm的第一高度H1减少至约13μm的后抛光突起217b的第二高度H2，且圆化基板的接触表面处的边缘。本文中，预先抛光的突起217a的直径D3为约30μm，且后抛光突起217b的直径D1为约25μm，这指示了从突起的侧壁移除的材料的厚度为约2.5μm，或使用本文描述的方法从升高特征的侧壁移除的材料的厚度至少等于或大于从升高特征的基板接触表面移除的材料的厚度。图4A至图4B进一步示出粗糙的经喷珠的凹陷表面的预先抛光216a至较平滑的凹陷表面后抛光216b所期望的平滑。
虽然前述针对本公开内容的实施例，但是可以在不背离本公开内容的基本范围的情况下修改本公开内容的其他和进一步的实施例，且本公开内容的范围由所附权利要求来确定。

Claims (14)

1.一种抛光基板支撑件的方法，包括：
旋转抛光工作台，所述抛光工作台具有安装于所述抛光工作台上的抛光垫；
将抛光流体应用至所述抛光垫；
以抛光下压力来促使所述基板支撑件的图案化表面抵靠所述抛光垫，其中所述基板支撑件的所述图案化表面包括从一个或多个凹陷表面延伸的多个突起，并且其中所述图案化表面的基板接触表面积小于待设置于所述基板支撑件上的基板的非器件侧表面积的20％；以及
抛光所述基板支撑件的所述图案化表面，包括：
在面对基板的表面处从多个突起移除第一厚度的材料；及
从所述多个突起的一个或多个侧面移除第二厚度的材料，其中所述第二厚度等于或大于所述第一厚度；
其中所述图案化表面进一步包括多个内密封带，每一个内密封带同轴地绕开口设置，所述开口形成在所述基板支撑件的介电材料中。
2.如权利要求1所述的方法，其中所述多个突起中的每一者具有介于3μm与50μm之间的高度。
3.如权利要求1所述的方法，其中所述抛光垫包括具有大于300μm的绒毛长度的氨基甲酸乙酯浸渍毛毡材料。
4.如权利要求1所述的方法，其中所述抛光垫具有大于50％的孔洞容积。
5.如权利要求1所述的方法，其中所述介电材料选自由以下项组成的群组：氧化铝(Al2O3)、氮化铝(AlN)、氧化钛(TiO)、氮化钛(TiN)、氧化钇(Y2O3)、以及上述项的组合。
6.如权利要求1所述的方法，其中所述基板支撑件的所述图案化表面进一步包括同心地设置于所述基板支撑件上的一个或多个外密封带，并且所述一个或多个外密封带中的至少一者接近所述图案化表面的外周边。
7.如权利要求1所述的方法，其中所述多个突起具有介于500μm与5mm之间的平均直径。
8.如权利要求7所述的方法，其中所述图案化表面的基板接触表面积小于待设置于所述基板支撑件上的基板的非器件侧表面积的10％。
9.一种抛光基板支撑件的图案化表面的方法，包括：
旋转抛光工作台，所述抛光工作台具有安装于所述抛光工作台上的抛光垫；
将抛光流体应用至所述抛光垫，所述抛光流体包括具有小于10μm的平均直径的金刚石磨料；
以抛光下压力来促使所述基板支撑件的所述图案化表面抵靠所述抛光垫，其中所述基板支撑件的所述图案化表面包括从所述基板支撑件的一个或多个凹陷表面延伸的多个升高特征，并且其中形成界定基板接触表面的所述多个升高特征的表面积小于待设置于所述基板支撑件上的基板的非器件侧表面积的20％；以及
抛光所述基板支撑件的所述图案化表面，以从所述升高特征的上表面移除大于0.5μm的材料；
其中所述图案化表面进一步包括多个内密封带，每一个内密封带同轴地绕开口设置，所述开口形成在所述基板支撑件的介电材料中。
10.如权利要求9所述的方法，其中所述图案化表面由介电材料形成，所述介电材料选自由以下项所组成的群组：氧化铝(Al2O3)、氮化铝(AlN)、氧化钛(TiO)、氮化钛(TiN)、氧化钇(Y2O3)、以及上述项的组合。
11.如权利要求10所述的方法，其中所述多个升高特征包括具有介于500μm与5mm之间的平均直径的多个突起及以同心地设置于所述基板支撑件上的一个或多个外密封带，其中所述一个或多个外密封带中的至少一者接近所述图案化表面的外周边。
12.如权利要求11所述的方法，其中抛光所述基板支撑件的所述图案化表面进一步包括：从所述升高特征的侧面移除大于0.5μm的材料。
13.如权利要求12所述的方法，其中抛光所述图案化表面包括：将所述图案化表面的所述一个或多个凹陷表面平滑化至小于0.2μm Ra的表面粗糙度。
14.一种抛光基板支撑件的图案化表面的方法，包括：
旋转抛光工作台，所述抛光工作台具有安装于所述抛光工作台上的抛光垫；
将抛光流体应用至所述抛光垫，所述抛光流体包括具有小于10μm的平均直径的金刚石磨料；
以抛光下压力来促使所述基板支撑件的所述图案化表面抵靠所述抛光垫，其中所述基板支撑件的所述图案化表面包括从所述基板支撑件的一个或多个凹陷表面延伸的多个圆柱突起；
其中所述多个圆柱突起的基板接触面积的表面积小于待设置于所述基板支撑件上的基板的非器件侧表面积的20％；
其中所述多个圆柱突起具有介于500μm与5mm之间的平均直径；
并且其中所述图案化表面由介电材料形成，所述介电材料选自由以下项所组成的群组：氧化铝(Al2O3)、氮化铝(AlN)、氧化钛(TiO)、氮化钛(TiN)、氧化钇(Y2O3)、以及上述项的组合；以及
抛光所述基板支撑件的所述图案化表面以从所述多个圆柱突起的表面移除大于0.5μm的介电材料以形成基板接触表面，并且从所述一个或多个凹陷表面移除大于0.1μm的介电材料，
其中所述图案化表面进一步包括多个内密封带，每一个内密封带同轴地绕开口设置，所述开口形成在所述基板支撑件的所述介电材料中。
CN201880057686.4A 2017-10-17 2018-07-17 静电基板支撑件几何形状的抛光 Active CN111052317B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762573491P 2017-10-17 2017-10-17
US62/573,491 2017-10-17
US15/886,574 2018-02-01
US15/886,574 US10654147B2 (en) 2017-10-17 2018-02-01 Polishing of electrostatic substrate support geometries
PCT/US2018/042387 WO2019078936A1 (en) 2017-10-17 2018-07-17 POLISHING ELECTROSTATIC SUBSTRATE SUPPORT GEOMETRIES

Publications (2)

Publication Number Publication Date
CN111052317A CN111052317A (zh) 2020-04-21
CN111052317B true CN111052317B (zh) 2023-10-20

Family

ID=66096886

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880057686.4A Active CN111052317B (zh) 2017-10-17 2018-07-17 静电基板支撑件几何形状的抛光

Country Status (6)

Country Link
US (1) US10654147B2 (zh)
JP (1) JP6924327B2 (zh)
KR (1) KR102330711B1 (zh)
CN (1) CN111052317B (zh)
TW (1) TWI748127B (zh)
WO (1) WO2019078936A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6948822B2 (ja) * 2017-04-25 2021-10-13 東京エレクトロン株式会社 基板処理装置及び基板取り外し方法
KR102140725B1 (ko) * 2018-01-22 2020-08-04 상구정공(주) 기판 지지장치 및 이의 제작방법
FR3096058B1 (fr) * 2019-05-15 2021-06-11 Commissariat Energie Atomique Dispositif de depôt chimique en phase vapeur presentant des zones de depôt reconfigurables
CN111805413A (zh) * 2020-07-23 2020-10-23 中国科学院微电子研究所 化学机械研磨方法
US11699611B2 (en) 2021-02-23 2023-07-11 Applied Materials, Inc. Forming mesas on an electrostatic chuck
US20220336258A1 (en) * 2021-04-16 2022-10-20 Applied Materials, Inc. Apparatus for controlling lift pin movement
US20230238267A1 (en) * 2022-01-26 2023-07-27 Applied Materials, Inc. Methods for electrostatic chuck ceramic surfacing
WO2024008338A1 (en) * 2022-07-08 2024-01-11 Struers ApS A grinding and/or polishing machine and a specimen holder
US20240017299A1 (en) * 2022-07-12 2024-01-18 Applied Materials, Inc. Methods for removing deposits on the surface of a chamber component

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6241596B1 (en) * 2000-01-14 2001-06-05 Applied Materials, Inc. Method and apparatus for chemical mechanical polishing using a patterned pad
JP2004235478A (ja) * 2003-01-30 2004-08-19 Sumitomo Mitsubishi Silicon Corp 貼り合わせｓｏｉ基板およびその製造方法
US6863281B2 (en) * 2001-09-13 2005-03-08 Sumitomo Osaka Cement Co., Ltd. Chucking apparatus and production method for the same
WO2010026955A1 (ja) * 2008-09-08 2010-03-11 芝浦メカトロニクス株式会社 基板保持部材、基板処理装置、基板処理方法
JP2016139650A (ja) * 2015-01-26 2016-08-04 住友大阪セメント株式会社 静電チャック装置
TW201736041A (zh) * 2016-03-24 2017-10-16 應用材料股份有限公司 用於化學機械研磨的紋理化的小墊

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07221168A (ja) 1994-02-02 1995-08-18 Toto Ltd 静電チャックの表面研磨方法
KR20010063395A (ko) 1999-12-22 2001-07-09 고석태 내식성을 향상시킬 수 있는 정전척의 제조방법 및 그에따른 정전척
US20040055709A1 (en) 2002-09-19 2004-03-25 Applied Materials, Inc. Electrostatic chuck having a low level of particle generation and method of fabricating same
US7697260B2 (en) * 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
US7182677B2 (en) * 2005-01-14 2007-02-27 Applied Materials, Inc. Chemical mechanical polishing pad for controlling polishing slurry distribution
US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
US7589950B2 (en) * 2006-10-13 2009-09-15 Applied Materials, Inc. Detachable electrostatic chuck having sealing assembly
TWI475594B (zh) * 2008-05-19 2015-03-01 Entegris Inc 靜電夾頭
KR101981766B1 (ko) 2011-06-02 2019-05-23 어플라이드 머티어리얼스, 인코포레이티드 정전기 척 aln 유전체 수리
KR101226570B1 (ko) 2012-10-12 2013-01-25 오중표 연마를 위한 정전척이 안착되는 베이스 부재
KR20140070049A (ko) * 2012-11-30 2014-06-10 삼성디스플레이 주식회사 기판 지지 유닛 및 이를 갖는 기판 처리 장치
US9358702B2 (en) 2013-01-18 2016-06-07 Applied Materials, Inc. Temperature management of aluminium nitride electrostatic chuck
US9669653B2 (en) * 2013-03-14 2017-06-06 Applied Materials, Inc. Electrostatic chuck refurbishment
WO2015023329A1 (en) 2013-08-10 2015-02-19 Applied Materials, Inc. A method of polishing a new or a refurbished electrostatic chuck
US10020218B2 (en) 2015-11-17 2018-07-10 Applied Materials, Inc. Substrate support assembly with deposited surface features
US20180204747A1 (en) * 2017-01-17 2018-07-19 Applied Materials, Inc. Substrate support assembly having surface features to improve thermal performance
US11955362B2 (en) * 2017-09-13 2024-04-09 Applied Materials, Inc. Substrate support for reduced damage substrate backside

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6241596B1 (en) * 2000-01-14 2001-06-05 Applied Materials, Inc. Method and apparatus for chemical mechanical polishing using a patterned pad
US6863281B2 (en) * 2001-09-13 2005-03-08 Sumitomo Osaka Cement Co., Ltd. Chucking apparatus and production method for the same
JP2004235478A (ja) * 2003-01-30 2004-08-19 Sumitomo Mitsubishi Silicon Corp 貼り合わせｓｏｉ基板およびその製造方法
WO2010026955A1 (ja) * 2008-09-08 2010-03-11 芝浦メカトロニクス株式会社 基板保持部材、基板処理装置、基板処理方法
JP2016139650A (ja) * 2015-01-26 2016-08-04 住友大阪セメント株式会社 静電チャック装置
TW201736041A (zh) * 2016-03-24 2017-10-16 應用材料股份有限公司 用於化學機械研磨的紋理化的小墊

Also Published As

Publication number Publication date
KR102330711B1 (ko) 2021-11-23
CN111052317A (zh) 2020-04-21
KR20200042027A (ko) 2020-04-22
US10654147B2 (en) 2020-05-19
JP6924327B2 (ja) 2021-08-25
WO2019078936A1 (en) 2019-04-25
JP2020530943A (ja) 2020-10-29
TW201923950A (zh) 2019-06-16
US20190111541A1 (en) 2019-04-18
TWI748127B (zh) 2021-12-01

Similar Documents

Publication Publication Date Title
CN111052317B (zh) 静电基板支撑件几何形状的抛光
US10395963B2 (en) Electrostatic chuck
CN108352354B (zh) 具有沉积表面特征结构的基板支撑组件
US9214376B2 (en) Substrate mounting stage and surface treatment method therefor
US5656093A (en) Wafer spacing mask for a substrate support chuck and method of fabricating same
US5841624A (en) Cover layer for a substrate support chuck and method of fabricating same
US9358702B2 (en) Temperature management of aluminium nitride electrostatic chuck
US20230326780A1 (en) Forming mesas on an electrostatic chuck
KR20160042061A (ko) 새로운 또는 개장된 정전 척을 폴리싱하는 방법
US7815492B2 (en) Surface treatment method
US20190206712A1 (en) Substrate chucking and dechucking methods
US20190080949A1 (en) Soft chucking and dechucking for electrostatic chucking substrate supports
US6336853B1 (en) Carrier having pistons for distributing a pressing force on the back surface of a workpiece
JP4439135B2 (ja) 静電チャック
US11756819B2 (en) Methods and apparatus for minimizing substrate backside damage
JP2018101705A (ja) 静電チャック
KR102564984B1 (ko) 정전척 보호 플레이트 및 그의 제조 방법
CN116982146A (zh) 降低的局部静电吸附力

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant