CN111039252A - Dual-channel self-detection MEMS microwave power distributor and preparation method thereof - Google Patents
Dual-channel self-detection MEMS microwave power distributor and preparation method thereof Download PDFInfo
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- CN111039252A CN111039252A CN201911393730.1A CN201911393730A CN111039252A CN 111039252 A CN111039252 A CN 111039252A CN 201911393730 A CN201911393730 A CN 201911393730A CN 111039252 A CN111039252 A CN 111039252A
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- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
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- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
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Abstract
The invention provides a double-channel self-detection MEMS microwave power divider and a preparation method thereof, wherein the double-channel self-detection MEMS microwave power divider comprises a microwave power divider, a thermoelectric MEMS microwave power sensor and three capacitive MEMS microwave power sensors, wherein the microwave power divider is positioned on a gallium arsenide substrate; the microwave power divider is of a T-shaped symmetrical structure and comprises three ports, and an ACPS signal line is arranged in the middle of the microwave power divider; the thermoelectric MEMS microwave power sensor is positioned in an annular area formed by the ACPS signal wires; each capacitive MEMS microwave power sensor is connected with one port through a CPW structure. The invention can detect whether two ports of the MEMS microwave power distributor are equal microwave power or not or whether mismatch occurs or not in real time on line through the capacitance type and thermoelectric type double channels, and the proportion of the microwave power at the input port and the output port is measured on line, thereby realizing the real-time on-line power self-detection of the MEMS microwave power distributor.
Description
Technical Field
The invention relates to the technical field of microwave system electronic devices, in particular to a double-channel self-detection MEMS microwave power distributor.
Background
The power divider is a device which divides one path of input signal energy into two paths or multiple paths of output equal or unequal energy. The device for combining multiple signal energies into one output is called a power combiner. With the development of the communication and internet of things industries, the requirement of microwave/millimeter wave devices is increasing day by day, and particularly, a microwave power distributor is widely applied to a microwave system as a device for distributing and synthesizing microwave power. And, higher requirements are put on the performance and reliability of the microwave power divider.
Through application research on the traditional microwave power distributors, the problems of performance degradation caused by assembly welding in a micro-system component and aging of an isolation resistor easily caused by long-term operation under larger microwave power can be found, so that the output inequality is caused, and even the device fails.
Therefore, there is an urgent need for a microwave power divider with an online self-detection function, that is, the microwave power of three ports of the microwave power divider is monitored online in real time, and the microwave power divider is required to be miniaturized, integrated on a single chip, and have no need for additional power consumption.
Disclosure of Invention
In order to solve the above problems, the present invention provides a dual-channel self-detection MEMS microwave power divider, which can detect whether two ports of the MEMS microwave power divider are equally divided microwave power or whether a mismatch condition occurs in real time on line through a capacitive and thermoelectric dual channel, and measure the ratio of the microwave power at the input and output ports on line, thereby implementing real-time on-line power self-detection of the MEMS microwave power divider.
In order to achieve the above purpose, the invention adopts a technical scheme that:
a dual channel self-sensing MEMS microwave power splitter comprising: the microwave power divider, the thermoelectric MEMS microwave power sensor and the three capacitive MEMS microwave power sensors are positioned on the gallium arsenide substrate; the microwave power divider is of a T-shaped symmetrical structure and comprises three ports, and an ACPS signal line is arranged in the middle of the microwave power divider; the thermoelectric MEMS microwave power sensor is positioned in an annular area formed by the ACPS signal lines; the thermoelectric MEMS microwave power sensor is used for testing unequal or mismatched conditions of the output end of the microwave power divider; each capacitive MEMS microwave power sensor is connected with one port through a CPW structure; the capacitance MEMS microwave power sensor is used for measuring the microwave power at the three ports.
Further, the microwave power divider further includes a CPW structure and a first air bridge, the CPW structure is located at the three ports, and the CPW structure includes a CPW signal line and a ground line; the number of the first air bridges is three, each first air bridge is located above the CPW signal line at three ports of the microwave power divider, two ends of each first air bridge are arranged on ground lines on two sides of the CPW signal line, a silicon nitride insulating medium layer covers the CPW signal line below the first air bridge, and the first air bridges and the CPW signal line below the first air bridges form capacitors.
Further, the ports include a first port, a second port and a third port, the first port is an input port, and the second port and the third port are output ports; the thermoelectric MEMS microwave power sensor comprises an isolation resistor, a thermopile and a substrate thin film structure, wherein the isolation resistor is arranged between the second port and the third port, the thermopile is arranged beside the isolation resistor, and the substrate thin film structure is arranged below the isolation resistor and the hot end of the thermopile; the thermopile comprises a metal thermocouple arm, a semiconductor thermocouple arm, a first metal connecting wire and a direct current output pressure welding block, wherein the metal thermocouple arm, the semiconductor thermocouple arm and the first metal connecting wire are connected in an ohmic contact mode, and the direct current output pressure welding block is connected with the first metal connecting wire.
Furthermore, the capacitive MEMS microwave power sensor comprises an MEMS fixed beam, a sensing electrode, a pressure welding block of the sensing electrode and a second air bridge, and a port of the capacitive MEMS microwave power sensor is connected with a port of the microwave power divider by adopting a CPW structure; the MEMS clamped beam spans the CPW structure, and the anchor area of the MEMS clamped beam is positioned on the outer side of the ground wire; the sensing electrodes are located below the MEMS clamped beam, the sensing electrodes are located between the CPW signal line and the ground wire, the two sensing electrodes are connected with a pressure welding block of the sensing electrode on the outer side of the ground wire through a second metal connecting line, the ground wires separated by the second metal connecting line are connected through a second air bridge, and a silicon nitride insulating medium layer covers the second metal connecting line below the second air bridge.
Furthermore, the ACPS signal line is of a circular structure, and corners of the ACPS signal line are designed to be rounded.
Furthermore, the isolation resistor is made of tantalum nitride, the square resistance of the isolation resistor is 25 +/-1 omega/□, and the resistance of the isolation resistor is 100 +/-1 omega.
The invention also provides a use method of any one of the MEMS microwave power divider based on capacitive and thermoelectric double-channel self-detection, which comprises the following steps: s10 providing a GaAs substrate, forming a semiconductor thermocouple arm by photoetching, etching and isolating GaAs; s20, forming a metal thermocouple arm of the thermopile by adopting photoetching, sputtering and stripping processes; s30, forming an isolation resistor by adopting photoetching, tantalum nitride sputtering and stripping processes; s40, performing photoetching, first layer gold evaporation and stripping to preliminarily form a CPW structure, an ACPS signal line, a first metal connecting line, a second metal connecting line, a sensing electrode, a pressure welding block of the sensing electrode and a direct current output pressure welding block; s50 depositing a silicon nitride insulating medium layer, photoetching and etching the silicon nitride insulating medium layer, depositing and photoetching a polyimide sacrificial layer; s60 titanium, gold and titanium are sequentially evaporated, and a CPW structure, an ACPS signal line, an MEMS clamped beam, a first air bridge, a second air bridge, a sensing electrode, a pressure welding block of the sensing electrode, a direct current output pressure welding block, a first metal connecting wire and a second metal connecting wire are completely formed by adopting a photoetching process and a reverse etching process; and S70, photoetching and etching the gallium arsenide substrate to form a substrate film structure, and releasing the polyimide sacrificial layer.
Further, the substrate is epitaxial N+Heavily doped gallium arsenide with a doping level of 1 x 1018cm-3。
Further, the square resistance of the isolation resistor is 25 +/-1 ohm/square, and the resistance of the isolation resistor is 100 +/-1 omega.
Further, the CPW structure includes a CPW signal line and a ground line.
Compared with the prior art, the technical scheme of the invention has the following advantages:
(1) whether two ports of the MEMS microwave power distributor are used for equally dividing microwave power or not or whether mismatch occurs can be detected on line in real time through the capacitance type and thermoelectric type double channels, the proportion of the microwave power at the input port and the output port is measured on line, and therefore real-time on-line power self-detection of the MEMS microwave power distributor is achieved.
(2) In the structure, a circular ACPS signal wire is adopted, so that the structure size is favorably reduced; three air bridges are correspondingly added at three ports in the microwave power divider, and the air bridges have capacitance compensation effect, so that the physical length of an ACPS signal line can be shortened, and the structural size of the microwave power divider is reduced, thereby realizing the miniaturization of the MEMS microwave power divider based on capacitance and thermoelectric double-channel self-detection.
(3) The corners of the ACPS signal lines are rounded, so that the continuity of the ACPS signal lines is improved, and the influence of the corners of the ACPS signal lines on microwave performance is weakened, so that the ACPS signal lines have smaller microwave loss.
(4) The MEMS microwave power divider is formed by a fully passive structure and has zero direct current power consumption.
Drawings
The technical solution and the advantages of the present invention will be apparent from the following detailed description of the embodiments of the present invention with reference to the accompanying drawings.
FIG. 1 is a schematic diagram of a dual channel self-test MEMS microwave power splitter in accordance with one embodiment of the present invention;
FIG. 2 is a cross-sectional view taken along line A-A of FIG. 1;
FIG. 3 is a cross-sectional view taken along line B-B of FIG. 1;
FIG. 4 is an enlarged view of a thermoelectric MEMS microwave power sensor structure according to an embodiment of the present invention;
FIG. 5 is an enlarged view of a capacitive MEMS microwave power sensor according to an embodiment of the present invention;
fig. 6 is a flowchart illustrating a method for manufacturing a dual-channel self-testing MEMS microwave power divider according to an embodiment of the present invention.
Reference numerals
The microwave power divider 1, the ACPS signal line 11, the CPW structure 12, the CPW signal line 121, the ground line 122, the first air bridge 13, the first port 14, the second port 15, the third port 16, the capacitive MEMS microwave power sensor 2, the sensing electrode 21, the pressure welding block 22 of the sensing electrode, the MEMS clamped beam 23, the anchor region 231, the second air bridge 24, the second metal connection line 25, the thermoelectric MEMS microwave power sensor 3, the isolation resistor 31, the thermopile 32, the metal thermocouple arm 321, the semiconductor thermocouple arm 322, the first metal connection line 323, the dc output pressure welding block 324, the substrate thin film structure 33, the gallium arsenide substrate 4, and the silicon nitride insulating medium layer 5.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1 to 5, the dual-channel self-detecting MEMS microwave power distributor of the present invention includes a microwave power distributor 1, three capacitive MEMS microwave power sensors 2, a thermoelectric MEMS microwave power sensor 3, and a gallium arsenide substrate 4. The microwave power divider 1, the three capacitive MEMS microwave power sensors 2, and the thermoelectric MEMS microwave power sensor 3 are respectively located on the gallium arsenide substrate 4.
The microwave power divider 1 is of a T-shaped symmetrical structure and symmetrically arranged, and is beneficial to applying probes when a microwave probe table tests a chip. The microwave power divider 1 includes an ACPS signal line 11, a CPW structure 12, and a first air bridge 13. The ACPS signal line 11 is disposed in the middle of the microwave power divider 1. The CPW structure 12 is located at three ports, and the CPW structure 12 includes a CPW signal line 121 and a ground line 122. The number of the first air bridges 13 is three, each of the first air bridges 13 is located above the CPW signal line 121 at three ports of the microwave power divider 1, two ends of each of the first air bridges 13 are fixed to ground lines 122 on two sides of the CPW signal line 121, a layer of silicon nitride insulating medium layer 5 covers the CPW signal line 121 below the first air bridge 13, the first air bridges 13 realize a common ground plane of the microwave power divider, and the first air bridges 13 and the CPW signal line 121 below the first air bridges 13 form a capacitor. The capacitor can compensate the electrical length of the microwave power divider 1, and shorten the physical length of the ACPS signal line 11, thereby reducing the structural size of the MEMS microwave power divider 1. The ACPS signal line 11 is of a circular structure, and the corners of the ACPS signal line 11 are designed to be rounded corners, so that the continuity of the ACPS signal line 11 is improved, and the influence of the corners of the ACPS signal line 11 on the microwave performance is reduced. The CPW structure 12, the ACPS signal line 11, and the first air bridge 13 are preferably made of gold.
The ports include a first port 14, a second port 15 and a third port 16, the first port 14 is an input port, and the second port 15 and the third port 16 are output ports.
Each of the capacitive MEMS microwave power sensors 2 is connected to one of the ports by a CPW structure 12. The capacitance MEMS microwave power sensor 2 is used for measuring the microwave power at the three ports. The capacitance type MEMS microwave power sensor 2 comprises a sensing electrode 21, a pressure welding block 22 of the sensing electrode, an MEMS clamped beam 23 and a second air bridge 24, the port of the capacitive MEMS microwave power sensor 2 is connected to the port of the microwave power divider 1 by using a CPW structure 12, the MEMS clamped beam 23 spans over the CPW structure, the anchor region 231 of the MEMS clamped beam 23 is located outside the ground line, the sensing electrode 21 is located below the MEMS clamped beam 23, the sensing electrode 21 is located between the CPW signal line 121 and the ground line 122, both sensing electrodes 21 are connected to the pressure welding block 22 of the sensing electrode outside the ground line through a second metal connecting line 25, the ground lines separated by the metal connecting line 25 are connected through a second air bridge 24, a silicon nitride insulating dielectric layer 5 is covered on the second metal connecting line 25 under the second air bridge 24. The second air bridge 24, the second metal connecting line 25, the MEMS clamped beam 23, the anchor region 231, the sensing electrode 21, and the bonding pad 22 of the sensing electrode are preferably made of metal gold.
The thermoelectric MEMS microwave power sensor 3 is positioned in an annular area formed by the ACPS signal wires 11; the thermoelectric MEMS microwave power sensor 3 is used for testing unequal division or mismatch conditions of the output end of the microwave power divider 1; the pyroelectric MEMS microwave power sensor 3 comprises an isolation resistor 31, a thermopile 32 and a substrate thin film structure 33, wherein the isolation resistor 31 is arranged between the second port 15 and the third port 16, the thermopile 32 is arranged beside the isolation resistor 31, and the substrate thin film structure 33 is arranged below the isolation resistor 31 and the hot end of the thermopile 32. The isolation resistor 31 is made of tantalum nitride, the square resistance of the isolation resistor 31 is 25 +/-1 ohm/square, and the resistance of the isolation resistor 31 is 100 +/-1 omega. The thermopile 32 includes a metal thermocouple arm 321, a semiconductor thermocouple arm 322, a first metal connection line 323, and a dc output bonding pad 324, where the metal thermocouple arm 321, the semiconductor thermocouple arm 322, and the first metal connection line 323 are connected by ohmic contact, and the dc output bonding pad 324 is connected to the first metal connection line 323. The first metal connecting line 323 and the dc output pad 324 are preferably made of metal gold.
The self-detection process of the dual-channel self-detection MEMS microwave power distributor of the embodiment is as follows:
the input microwave power is transmitted to the input end of the microwave power divider 1, i.e. the first port 14, through the capacitive MEMS microwave power sensor 2, then transmitted through the CPW signal line 121 and the ACPS signal line 11 in the microwave power divider 1, and then divided into two portions of microwave power, which are transmitted to the output end of the microwave power divider 1, i.e. the second port 15 and the third port 16, respectively, and finally transmitted through the capacitive MEMS microwave power sensor 2, thereby completing one-to-two output of the microwave power. When microwave power passes through the capacitive MEMS microwave power sensor 2, electrostatic force is generated between the MEMS clamped beam 23 and the sensing electrode 21, which causes a change in capacitance between the MEMS clamped beam 23 and the sensing electrode 21, and the amount of input or output microwave power can be obtained by measuring the capacitance between the MEMS clamped beam 23 and the sensing electrode 21. The capacitive MEMS microwave power sensor 2 is based on the microwave power-force-electricity principle and is therefore more suitable for the detection of larger microwave powers. When unequal microwave power is output from two ends of the MEMS microwave power distributor 1 or mismatch occurs, the isolation resistor 31 of the microwave power distributor 1 can generate heat to cause temperature difference between the cold end and the hot end of the thermopile 32, based on the Seebeck effect, the thermopile 32 converts the heat into direct current hot voltage, and whether the two ports of the MEMS microwave power distributor are equal microwave power or mismatch occurs can be detected on line in real time by measuring the hot voltage on the thermopile 32. Therefore, the output of two ends of the device can be judged to be unequal or mismatched through the thermoelectric MEMS microwave power sensor 3, and the microwave power at three ports can be measured through the capacitive MEMS microwave power sensor 2, so that the dual-channel online microwave power self-detection based on the capacitive and thermoelectric MEMS microwave power distributor is realized.
The embodiment of the invention also provides a preparation method of the MEMS microwave power distributor based on the double-channel self-detection, as shown in FIG. 6, the preparation method comprises the following steps: s10 providing a GaAs substrate, and forming a semiconductor thermocouple arm by photoetching, etching and isolating GaAs; s20, forming a metal thermocouple arm of the thermopile by adopting photoetching, sputtering and stripping processes; s30, forming an isolation resistor by adopting photoetching, tantalum nitride sputtering and stripping processes; s40, performing photoetching, first layer gold evaporation and stripping to preliminarily form a CPW structure, an ACPS signal wire, a first metal connecting wire, a second metal connecting wire, a sensing electrode, a pressure welding block of the sensing electrode and a direct current output pressure welding block; s50 depositing a silicon nitride insulating medium layer, photoetching and etching the silicon nitride insulating medium layer, depositing and photoetching a polyimide sacrificial layer; s60 titanium, gold and titanium are sequentially evaporated, and a CPW structure, an ACPS signal line, an MEMS fixed supporting beam, a first air bridge, a second air bridge, a sensing electrode, a pressure welding block of the sensing electrode, a direct current output pressure welding block, a first metal connecting wire and a second metal connecting wire are completely formed by adopting a photoetching process and a reverse etching process; and S70, photoetching and etching the gallium arsenide substrate to form a substrate film structure, and releasing the polyimide sacrificial layer.
The step S10 includes the following steps: s11 preparing a gallium arsenide substrate: selecting epitaxial semi-insulating gallium arsenide as substrate, wherein the epitaxial N+The gallium arsenide is heavily doped at a doping concentration of the order of about 1 x 1018cm-3(ii) a S12 photolithography, etching and isolating epitaxial N+Gallium arsenide, forming the semiconductor thermocouple arms and ohmic contact regions of the thermopile.
The step S20 includes the following steps: s21 photo-etching, removing the photo-etching glue on the place where the gold germanium nickel/gold is to be reserved; s22 sputtering of Au-Ge-Ni/Au with a thickness of
And S23 peeling off to form the metal thermocouple arm of the thermopile.
The step S30 includes the following steps: s31, reversely etching the N + gallium arsenide to increase the resistance value of the thermoelectric stack; s32 photoetching, removing the photoresist where the tantalum nitride is to be reserved; s33 sputtering tantalum nitride with the thickness of 1 μm; s34 is stripped off to form an isolation resistor with a square resistance of 25 ohm/square.
The step S40 includes the following steps: s41 photoetching, removing the photoresist at the place where the first layer of gold is to be reserved; s42 evaporating a first layer of gold to a thickness of
And S43, peeling off to form the CPW, the ACPS signal wire, the first metal connecting wire, the second metal connecting wire, the sensing electrode, the pressure welding block of the sensing electrode and the direct current output pressure welding block preliminarily.
The step S50 includes the following steps: s51 deposition of silicon nitride: growing a silicon nitride insulating dielectric layer with the thickness of 0.23 mu m by using a Plasma Enhanced Chemical Vapor Deposition (PECVD) process; s52 photoetching and etching the silicon nitride insulating medium layer: the silicon nitride insulating medium layer is reserved on the CPW below the MEMS clamped beam, on the sensing electrode and on the CPW signal line below the air bridge; s53 depositing and photo-etching a polyimide sacrificial layer: coating a polyimide sacrificial layer with the thickness of 1.6 mu m on the gallium arsenide substrate, wherein the pits are required to be filled, and the thickness of the polyimide sacrificial layer determines the distance between the MEMS clamped beam and the air bridge and the silicon nitride insulating medium layer on the CPW signal wire below the MEMS clamped beam and the air bridge; and photoetching the polyimide sacrificial layer, and only reserving the sacrificial layer below the MEMS clamped beam and the air bridge.
The step S60 includes the following steps: s61 evaporating titanium/gold/titanium: evaporating the bottom gold for electroplating; s62 photoetching, removing the photoresist on the position to be electroplated; s63 electroplating gold with the thickness of 2 μm; s64 removing the photoresist, namely removing the photoresist at the position where electroplating is not needed; s65 reversely etching titanium/gold/titanium to form CPW, ACPS signal line, MEMS clamped beam, air bridge, sensing electrode, pressure welding block of sensing electrode, DC output pressure welding block and metal connecting line.
The step S70 includes the following steps: s71 thinning the back of the GaAs substrate; and S72 back photoetching and etching: etching off the gallium arsenide substrate below the terminal matching resistor and the hot end of the thermopile, and reserving a substrate film structure smaller than 20 microns; s73 releasing the polyimide sacrificial layer: and (3) soaking in a developing solution, removing the polyimide sacrificial layer below the MEMS clamped beam and the air bridge, slightly soaking in deionized water, dehydrating with absolute ethyl alcohol, volatilizing at normal temperature, and drying.
The above description is only an exemplary embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent structures or equivalent flow transformations that may be applied to the present invention and the contents of the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. A dual channel self-sensing MEMS microwave power splitter, comprising: the microwave power divider (1), the thermoelectric MEMS microwave power sensor (3) and the three capacitive MEMS microwave power sensors (2) are positioned on the gallium arsenide substrate (4);
the microwave power divider (1) is of a T-shaped symmetrical structure and comprises three ports, and an ACPS signal line (11) is arranged in the middle of the microwave power divider (1);
the thermoelectric MEMS microwave power sensor (3) is positioned in an annular area formed by the ACPS signal wires (11); the thermoelectric MEMS microwave power sensor (3) is used for testing unequal or mismatched conditions of the output end of the microwave power divider (1);
each capacitive MEMS microwave power sensor (2) is connected with one port through a CPW structure; the capacitance MEMS microwave power sensor (2) is used for measuring the microwave power at the three ports.
2. The dual channel self-detecting MEMS microwave power splitter according to claim 1, characterized in that the microwave power splitter (1) further comprises a CPW structure (12) and a first air bridge (13),
the CPW structure (12) is located at three ports, the CPW structure (12) comprising a CPW signal line (121) and a ground line (122);
the number of the first air bridges (13) is three, each first air bridge (13) is located above the CPW signal line (121) at three ports of the microwave power divider (1), two ends of each first air bridge (13) are arranged on ground wires (122) on two sides of the CPW signal line (121), a silicon nitride insulating medium layer (5) covers the CPW signal line (121) below the first air bridge (13), and the first air bridge (13) and the CPW signal line (121) below the first air bridge form a capacitor.
3. The dual channel self-sensing MEMS microwave power divider as claimed in claim 1, wherein the ports include a first port (14), a second port (15) and a third port (16), the first port (14) being an input, the second port (15) and the third port (16) being an output;
the thermoelectric MEMS microwave power sensor (3) comprises an isolation resistor (31), a thermopile (32) and a substrate thin film structure (33), wherein the isolation resistor (31) is arranged between the second port (15) and the third port (16), the thermopile (32) is arranged beside the isolation resistor (31), and the substrate thin film structure (33) is arranged below the isolation resistor (31) and the hot end of the thermopile (32);
the thermopile (32) comprises a metal thermocouple arm (321), a semiconductor thermocouple arm (322), a first metal connecting line (323) and a direct current output pressure welding block (324), the metal thermocouple arm (321), the semiconductor thermocouple arm (322) and the first metal connecting line (323) are connected in an ohmic contact mode, and the direct current output pressure welding block (324) is connected with the first metal connecting line (323).
4. The dual channel self-sensing MEMS microwave power splitter according to claim 3, wherein the capacitive MEMS microwave power sensor (2) comprises a MEMS clamped beam (23), a sensing electrode (21), a pressure welding block (22) of the sensing electrode and a second air bridge (24),
the port of the capacitive MEMS microwave power sensor (2) is connected with the port of the microwave power divider (1) by adopting a CPW structure (12);
the MEMS clamped beam (23) crosses over the CPW structure (12), and an anchor area (231) of the MEMS clamped beam (23) is positioned outside a ground wire;
the sensing electrodes (21) are located below the MEMS clamped beam (23), the sensing electrodes (21) are located between the CPW signal line (121) and the ground line (122), the two sensing electrodes (21) are connected with a pressure welding block (22) of the sensing electrode on the outer side of the ground line (122) through second metal connecting lines (25), the ground lines separated by the second metal connecting lines (25) are connected through second air bridges (24), and a silicon nitride insulating medium layer (5) covers the second metal connecting lines (25) below the second air bridges (24).
5. The dual channel self-sensing MEMS microwave power divider as claimed in claim 1, wherein the ACPS signal line (11) is circular in configuration and rounded corners of the ACPS signal line (11) are designed.
6. The dual channel self-sensing MEMS microwave power divider according to claim 3, wherein the isolation resistor (31) is made of tantalum nitride, the square resistance of the isolation resistor (31) is 25 ± 1 ohm/square, and the resistance of the isolation resistor (31) is 100 ± 1 Ω.
7. The method for preparing a dual channel self-sensing MEMS microwave power splitter as claimed in any one of claims 1 to 6, comprising the steps of:
s10 providing a GaAs substrate, and forming a semiconductor thermocouple arm by photoetching, etching and isolating GaAs;
s20, forming a metal thermocouple arm of the thermopile by adopting photoetching, sputtering and stripping processes;
s30, forming an isolation resistor by adopting photoetching, tantalum nitride sputtering and stripping processes;
s40, performing photoetching, first layer gold evaporation and stripping to preliminarily form a CPW structure, an ACPS signal line, a first metal connecting line, a second metal connecting line, a sensing electrode, a pressure welding block of the sensing electrode and a direct current output pressure welding block;
s50 depositing a silicon nitride insulating medium layer, photoetching and etching the silicon nitride insulating medium layer, depositing and photoetching a polyimide sacrificial layer;
s60 titanium, gold and titanium are sequentially evaporated, and a CPW structure, an ACPS signal line, an MEMS clamped beam, a first air bridge, a second air bridge, a sensing electrode, a pressure welding block of the sensing electrode, a direct current output pressure welding block, a first metal connecting wire and a second metal connecting wire are completely formed by adopting a photoetching process and an inverse etching process; and
s70, the GaAs substrate is photoetched and etched to form a substrate film structure, and the polyimide sacrificial layer is released.
8. The method of claim 7, wherein the substrate is epitaxial N+Heavily doped gallium arsenide with a doping level of 1 x 1018cm-3。
9. The method for preparing a dual channel self-sensing MEMS microwave power divider as claimed in claim 7, wherein the square resistance of the isolation resistor (31) is 25 ± 1 ohm/square, and the resistance of the isolation resistor (31) is 100 ± 1 Ω.
10. The method of fabricating the dual channel self-sensing MEMS microwave power splitter as claimed in claim 7, wherein the CPW structure (12) includes a CPW signal line (121) and a ground line (122).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911393730.1A CN111039252B (en) | 2019-12-30 | 2019-12-30 | Dual-channel self-detection MEMS microwave power distributor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201911393730.1A CN111039252B (en) | 2019-12-30 | 2019-12-30 | Dual-channel self-detection MEMS microwave power distributor and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
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| CN113671247A (en) * | 2021-09-03 | 2021-11-19 | 东南大学 | Online microwave power sensor based on PT symmetrical circuit |
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