CN111029478A - OLED light-emitting device and preparation method thereof - Google Patents
OLED light-emitting device and preparation method thereof Download PDFInfo
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- CN111029478A CN111029478A CN201911281963.2A CN201911281963A CN111029478A CN 111029478 A CN111029478 A CN 111029478A CN 201911281963 A CN201911281963 A CN 201911281963A CN 111029478 A CN111029478 A CN 111029478A
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- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
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- H10K50/16—Electron transporting layers
- H10K50/165—Electron transporting layers comprising dopants
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- H10K50/00—Organic light-emitting devices
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- H10K50/17—Carrier injection layers
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Abstract
The invention provides an OLED light-emitting device and a preparation method thereof, belonging to the technical field of display, wherein the OLED light-emitting device comprises a substrate, and an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer and a cathode which are stacked on the substrate; a first ion adsorbent is doped between the anode and the light-emitting layer and is used for adsorbing metal ions dissociating between the anode and the light-emitting layer; a second ion adsorbent is doped between the cathode and the light-emitting layer; used for adsorbing metal ions dissociated between the cathode and the light-emitting layer. The OLED light-emitting device and the preparation method provided by the invention can prevent metal ions from entering the light-emitting layer, and can avoid the phenomenon of light-emitting quenching, so that the service life of the OLED light-emitting device is prolonged.
Description
Technical Field
The invention relates to the technical field of display, in particular to an OLED light-emitting device and a preparation method thereof.
Background
Organic Light-Emitting diodes (OLEDs) have become a popular flat panel display technology because of their advantages of self-luminescence, high contrast, wide viewing angle, fast response speed, and capability of manufacturing flexible panels.
The conventional organic light emitting diode comprises an anode, a cathode, and a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an electron injection layer which are sequentially arranged between the anode and the cathode; in order to improve the injection efficiency of electrons and holes, the anode and the cathode are usually doped with active metal materials.
However, the formed metal ions in the anode and the cathode may migrate to the light emitting layer, resulting in a light emission quenching phenomenon, thereby affecting the lifetime of the OLED light emitting device.
Disclosure of Invention
The embodiment of the invention provides an OLED light-emitting device and a preparation method thereof, which can prevent metal ions from entering a light-emitting layer and avoid the phenomenon of light-emitting quenching so as to prolong the service life of the OLED light-emitting device.
In order to achieve the above purpose, the embodiment of the invention adopts the following technical scheme:
the embodiment of the invention provides an OLED light-emitting device, which comprises a substrate, and an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer and a cathode which are stacked on the substrate; a first ion adsorbent is doped between the anode and the light-emitting layer and is used for adsorbing metal ions dissociating between the anode and the light-emitting layer; a second ion adsorbent is doped between the cathode and the light-emitting layer; used for adsorbing metal ions dissociated between the cathode and the light-emitting layer.
Further, the first ion adsorbent is one of an aluminum salt adsorbent, a manganese-based lithium ion sieve and a titanium-based lithium ion sieve; the second ion adsorbent is one of an aluminum salt adsorbent, a manganese-based lithium ion sieve and a titanium-based lithium ion sieve.
Further, the metal ions between the anode and the light-emitting layer are indium ions, and the first ion adsorbent is used for adsorbing the indium ions; the metal ions between the cathode and the light-emitting layer are lithium ions, and the second ion adsorbent is used for adsorbing the lithium ions.
Further, a first adsorption layer is arranged between the anode and the hole injection layer, and is used for adsorbing metal ions generated by the anode; a second adsorption layer is arranged between the cathode and the electron injection layer and is used for adsorbing metal ions generated by the cathode; the first adsorption layer and the second adsorption layer both comprise electrolytes for adsorbing metal ions and nano-ions.
Furthermore, the first adsorption layer is made of one of polyelectrolyte, polymer brush and inorganic charged nanoparticles; the second adsorption layer is made of one of polyelectrolyte, polymer brush and inorganic charged nanoparticles.
Furthermore, the first adsorption layer is used for adsorbing indium ions, and the second adsorption layer is used for adsorbing lithium ions and ytterbium ions.
Further, the thickness of the first adsorption layer and the second adsorption layer is 10nm-15 nm.
Further, the OLED light-emitting device further comprises an encapsulation cover plate, and the encapsulation cover plate is arranged above the cathode.
Another aspect of the embodiments of the present invention provides a method for manufacturing an OLED light emitting device, including the following steps;
an anode is arranged on a substrate, and a hole injection layer and a hole transport layer are sequentially prepared on the anode;
doping a second ion-absorbing agent in the hole injection layer and the hole transport layer;
preparing a light-emitting layer, an electron transport layer and an electron injection layer on the hole transport layer;
doping a first ion adsorbent in the electron transport layer and the electron injection layer;
manufacturing a cathode above the electron injection layer;
an encapsulation cover plate covers the cathode.
Further, before preparing a hole injection layer on the anode, preparing a first adsorption layer on the anode and preparing the hole injection layer on the first adsorption layer; preparing a second adsorption layer on the electron injection layer and preparing the cathode on the second adsorption layer before preparing the cathode on the electron injection layer.
Compared with the prior art, the OLED light-emitting device and the preparation method provided by the embodiment of the invention have the following advantages:
according to the OLED light-emitting device and the preparation method provided by the embodiment of the invention, an electron injection layer and an electron transport layer which are positioned between a light-emitting layer and a cathode are doped with a first ion adsorbent, and a hole injection layer and a hole transport layer which are positioned between an anode and the light-emitting layer are doped with a second ion adsorbent; the first ion adsorbent and the second ion adsorbent can be used for adsorbing metal ions so as to prevent the metal ions from entering the luminescent layer.
According to the embodiment of the invention, the first ion adsorbent and the second ion adsorbent are used for adsorbing free metal ions, so that the phenomenon of luminescence quenching caused by the fact that the metal ions enter the luminescent layer is avoided, the luminescent performance of the OLED luminescent device can be improved, and the service life of the OLED luminescent device can be prolonged.
In addition to the technical problems solved by the present invention, the technical features constituting the technical solutions, and the advantages brought by the technical features of the technical solutions, other technical problems solved by the OLED light emitting device and the method for manufacturing the OLED light emitting device according to the present invention, other technical features included in the technical solutions, and advantages brought by the technical features will be further described in detail in the detailed description of the embodiments.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments of the present invention or the prior art will be briefly described below, it is obvious that the drawings in the following description are only a part of the embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic illustration of doping of a first ion adsorbent and a second ion adsorbent according to an embodiment of the present invention;
fig. 2 is a schematic layout view of a first adsorption layer and a second adsorption layer according to an embodiment of the present invention;
fig. 3 is a schematic flow chart of a method for manufacturing an OLED light-emitting device according to an embodiment of the present invention.
Description of reference numerals:
10-an anode;
20-a first adsorption layer;
30-a hole injection layer;
40-a hole transport layer;
50-a light emitting layer;
60-an electron transport layer;
70-electron injection layer;
80-a second adsorption layer;
90-a cathode;
100-a substrate;
101-a first ionic adsorbent;
102-a second ionic adsorbent;
200-packaging the cover plate.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. It is to be understood that the described embodiments are merely a few embodiments of the invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
As shown in fig. 1, the OLED light-emitting device provided by the embodiment of the present invention includes a substrate 100, and an anode 10, a hole injection layer 30, a hole transport layer 40, a light-emitting layer 50, an electron transport layer 60, an electron injection layer 70, and a cathode 90 stacked on the substrate 100; a first ion adsorbent 101 is doped between the anode 10 and the light-emitting layer 50; the second ion adsorbent 102 is doped between the cathode 90 and the light-emitting layer 50, and the first ion adsorbent 101 and the second ion adsorbent 102 are both used for adsorbing metal ions and preventing the metal ions from moving to the light-emitting layer 50.
Specifically, the OLED light-emitting device provided in this embodiment includes a substrate 100, and an anode 10, a hole injection layer 30, a hole transport layer 40, a light-emitting layer 50, an electron transport layer 60, an electron injection layer 70, and a cathode 90 stacked on the substrate; the substrate 100 may be a common glass substrate 100, and the anode 10 may be made of Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), Aluminum Zinc Oxide (AZO), Gallium Zinc Oxide (GZO), or other materials; and the anode 10 is connected with a positive electrode and serves to provide holes. The cathode 90 can be made of silver (Ag), aluminum (Al), samarium (Sm), ytterbium (Yb), Mg-Ag alloy or Mg-Al alloy and other materials; and the cathode 90 is connected to the negative electrode for supplying electrons; under the action of a certain voltage, the electron injection layer 70 introduces electrons generated by the cathode 90 and transfers the electrons to the light emitting layer 50 through the electron transport layer 60; the hole injection layer 30 introduces holes generated from the anode 10 and transfers the holes to the light emitting layer 50 through the hole transport layer 40; the transport electrons and holes are recombined in the light emitting layer 50 to form excitons, thereby emitting light.
In this embodiment, in order to prevent the metal ions dissociated between the anode 10 and the light-emitting layer 50 and between the cathode 90 and the light-emitting layer 50 from entering the light-emitting layer 50, the first ion-adsorbing agent 101 is doped in the hole injection layer 30 and the hole transport layer 40 between the anode 10 and the light-emitting layer 50, and the first ion-adsorbing agent 101 is used for adsorbing the dissociated metal ions dissociated between the anode 10 and the light-emitting layer 50; the electron injection layer 70 and the electron transport layer 60 between the cathode 90 and the light emitting layer 50 are doped with a second ion adsorbent 102, and the second ion adsorbent 102 adsorbs free metal ions between the cathode 90 and the light emitting layer 50. For example, if the metal ions dissociated between the cathode 90 and the light emitting layer 50 are lithium ions, the electron injection layer 70 and the electron transport layer 60 may be doped with a lithium ion absorbent for preventing the lithium ions from being transported to the light emitting layer 50. In the embodiment, the first ion adsorbent 101 is doped between the light-emitting layer 50 and the anode 10, and the second ion adsorbent 102 is doped between the light-emitting layer 50 and the cathode 90, so that free metal ions can be adsorbed, the metal ions are prevented from entering the light-emitting layer 50, the occurrence of a light-emitting quenching phenomenon is avoided, and the light-emitting performance and the service life of the OLED light-emitting device can be improved.
Further, the ion adsorbent provided in this embodiment is one of an aluminum salt adsorbent, a manganese-based lithium ion sieve and a titanium-based lithium ion sieve, and based on the principle of positive and negative charge attraction, the ion adsorbent can be used to adsorb metal ions. Specifically, the second ion adsorbent 102 may be one of an aluminum salt adsorbent, a manganese-based lithium ion sieve and a titanium-based lithium ion sieve, and may be used to adsorb metal ions, such as lithium ions, that are dissociated between the light emitting layer 50 and the cathode 90; the first ion adsorbent 101 may also be made of the same material as the second ion adsorbent 102, that is, the first ion adsorbent 101 may also be one of an aluminum salt adsorbent, a manganese-based lithium ion sieve and a titanium-based lithium ion sieve for adsorbing metal ions, such as indium ions, that are dissociated between the light emitting layer 50 and the anode 10. It is understood that the first ion adsorbent 101 and the second ion adsorbent 102 may be selected from one type of adsorbent, for example, titanium-based lithium ion sieves; alternatively, the first ion adsorbent 101 and the second ion adsorbent 102 are selected from different adsorbents, for example, the first ion adsorbent 101 is an aluminum salt adsorbent, and the second ion adsorbent 102 is a titanium-based lithium ion sieve.
As shown in fig. 2, in order to further reduce the metal ions in the electrode from being dissociated to the light-emitting layer 50; in another embodiment of the present invention, a first adsorption layer 20 is disposed between the anode 10 and the hole injection layer 30, and a second adsorption layer 80 is disposed between the cathode 90 and the electron injection layer 70; the first adsorption layer 20 and the second adsorption layer 80 include an electrolyte capable of adsorbing metal ions and nano-ions.
Specifically, the OLED light emitting device provided in this embodiment further includes a first absorption Layer 20 and a second absorption Layer 80, where the first absorption Layer 20 is located between the anode 10 and the hole injection Layer 30, and may be disposed between the anode 10 and the hole injection Layer 30 in a Layer-By-Layer (Layer-By-Layer) manner; the first adsorption layer 20 is used for adsorbing metal ions generated by the anode 10 and preventing the metal ions from diffusing to the light-emitting layer 50; for example, if the anode 10 is made of Indium Tin Oxide (ITO), the first absorption layer 20 can absorb indium ions generated by the anode 10, and can prevent the indium ions from further diffusing into the hole injection layer 30 and the hole transport layer 40.
Similarly, the second adsorption Layer 80 is disposed between the cathode 90 and the electron injection Layer 70, and may be disposed between the cathode 90 and the hole injection Layer 30 in a Layer-By-Layer (Layer-By-Layer) manner; the second adsorption layer 80 is used for adsorbing metal ions generated by the cathode 90, and can prevent the metal ions from diffusing to the light-emitting layer 50; for example, if the cathode 90 is made of ytterbium or a lithium-containing material, ytterbium ions or lithium ions generated by the cathode 90 can be adsorbed by the second adsorption layer 80, and further diffusion of ytterbium ions or lithium ions to the electron injection layer 70 and the electron transport layer 60 is prevented.
In this embodiment, the first adsorption layer 20 is disposed before the anode 10 and the hole injection layer 30, the second adsorption layer 80 is disposed between the cathode 90 and the electron injection layer 70, and the first ion adsorbent 101 doped between the hole injection layer 30 and the hole transport layer 40 and the second ion adsorbent 102 doped between the electron injection layer 70 and the electron transport layer 60 are combined, so that the blocking effect on metal ions can be enhanced, the phenomenon of light emission quenching caused by the metal ions entering the light emitting layer 50 can be avoided, and the service life of the OLED light emitting device can be prolonged. It is understood that the thickness of the first adsorption layer 20 and the second adsorption layer 80 is 10nm to 15 nm. Preferably 10 nm.
Furthermore, the material for manufacturing the first adsorption layer 20 and the second adsorption layer 80 provided by this embodiment may be one of polyelectrolyte, polymer brush, and inorganic charged nanoparticles, and the polymer and other materials have good processability, and the flatness of the prepared device is good; when lithium ions, ytterbium ions, or the like migrate to the adsorbing layer, they are electrostatically adsorbed and the migration of ions to the light-emitting layer is suppressed.
Specifically, the second ion-adsorbing layer may be one of polyelectrolyte, polymer brush, and inorganic charged nanoparticles, and may be used to adsorb metal ions, such as lithium ions, ytterbium ions, etc., that are dissociated between the light-emitting layer 50 and the cathode 90. The first ion-adsorbing layer may also be made of the same material as the second ion-adsorbing layer, i.e. the first ion-adsorbing layer may also be one of polyelectrolyte, polymer brush, and inorganic charged nanoparticles, and is used for adsorbing metal ions, such as indium ions, dissociated between the light-emitting layer 50 and the anode 10. It will be appreciated that the first and second ion-adsorbing layers may be made of the same material, for example, inorganic charged nanoparticles; or the first ion adsorption layer and the second ion adsorption layer are made of different materials, for example, the first ion adsorption layer is made of polyelectrolyte, and the second ion adsorption layer is made of inorganic charged nanoparticles.
In this embodiment, the OLED light emitting device further includes an encapsulating cover plate 200 disposed over the cathode 90. Specifically, the cathode 90 is covered with the package cover plate 200, and the package cover plate 200 and the cathode 90 can be connected together through an adhesive, so that corrosion of external water and oxygen to the device can be better prevented, and the service life of the device is further prolonged.
As shown in fig. 3, this embodiment further provides a method for manufacturing an OLED light-emitting device, including the following steps:
step a: an anode 10 is arranged on a substrate 100, and a hole injection layer 30 and a hole transport layer 40 are sequentially prepared on the anode 10; specifically, the anode 10 is prepared by sputtering on the cleaned substrate 100, and the hole injection layer 30 and the hole transport layer 40 are sequentially prepared on the anode 10 by vapor deposition.
Step b: doping the hole injection layer 30 and the hole transport layer 40 with a first ion adsorbent 101; specifically, the first ion adsorbent 101 may be one of an aluminum salt adsorbent, a manganese-based lithium ion sieve, and a titanium-based lithium ion sieve, and is doped into the hole injection layer 30 and the hole transport layer 40 to prevent metal ions from diffusing into the light emitting layer 50.
Step c: preparing a light emitting layer 50, an electron transport layer 60, and an electron injection layer 70 on the hole transport layer 40; specifically, after the first ion adsorbent 101 is doped into the hole injection layer 30 and the hole transport layer 40, the electron transport layer 60 and the electron injection layer 70 may be prepared on the hole transport layer 40 by evaporation.
Step d: doping the second ion adsorbent 102 within the electron transport layer 60 and the electron injection layer 70; specifically, the second ion adsorbent 102 may be selected from one of an aluminum salt adsorbent, a manganese-based lithium ion sieve, and a titanium-based lithium ion sieve, and is doped into the electron transport layer 60 and the electron injection layer 70 to prevent metal ions from diffusing into the light emitting layer 50.
Step e: fabricating a cathode 90 over the electron injection layer 70; specifically, after the second ion adsorbent 102 is doped into the electron transport layer 60 and the electron injection layer 70, the cathode 90 may be prepared on the electron injection layer 70 by evaporation.
Step f: an encapsulating cover 200 is applied over the cathode 90. Specifically, the encapsulating cover plate 200 is connected to the cathode 90 layer through a light curing adhesive, so that the OLED light emitting device is manufactured.
On the basis of the above-described embodiment, before preparing the hole injection layer 30 on the anode 10, the first adsorption layer 20 is prepared on the anode 10, and the hole injection layer 30 is prepared on the first adsorption layer 20; before preparing the cathode 90 on the electron injection layer 70, a second adsorption layer 80 is prepared on the electron injection layer 70, and the cathode 90 is prepared on the second adsorption layer 80.
Specifically, in order to further prevent the metal ions generated By the anode 10 and the metal ions generated By the cathode 90 from diffusing into the light-emitting Layer 50, in step a, after the preparation of the anode 10 on the substrate 100 is completed, before the preparation of the hole injection Layer 30 on the anode 10, the first adsorption Layer 20 needs to be prepared on the anode 10, and the first adsorption Layer 20 may be prepared By layering one of polyelectrolyte, polymer brush, and inorganic charged nanoparticles on the anode 10 in a Layer-By-Layer (Layer-By-Layer) manner, and then fabricating the hole injection Layer 30 on the first adsorption Layer 20 By using an evaporation process.
After step d is completed and before step e is performed, the second adsorption layer 80 needs to be further prepared on the electron injection layer 70, and the second adsorption layer 80 can be prepared by the same method as the method for preparing the first adsorption layer 20, which is not described again. After the second adsorption layer 80 is manufactured, the cathode 90 is manufactured on the second adsorption layer 80 by an evaporation process.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Claims (10)
1. An OLED light-emitting device comprises a substrate, and an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer and a cathode which are arranged on the substrate in a laminated manner; it is characterized in that the preparation method is characterized in that,
a first ion adsorbent is doped between the anode and the light-emitting layer and is used for adsorbing metal ions dissociating between the anode and the light-emitting layer;
and a second ion adsorbent is doped between the cathode and the light-emitting layer and is used for adsorbing metal ions dissociating between the cathode and the light-emitting layer.
2. The OLED light emitting device of claim 1 wherein the first ion adsorbent is one of an aluminum salt adsorbent, a manganese-based lithium ion sieve, and a titanium-based lithium ion sieve;
the second ion adsorbent is one of an aluminum salt adsorbent, a manganese-based lithium ion sieve and a titanium-based lithium ion sieve.
3. The OLED light emitting device of claim 2,
the metal ions positioned between the anode and the light-emitting layer are indium ions, and the first ion adsorbent is used for adsorbing the indium ions;
the metal ions between the cathode and the light-emitting layer are lithium ions, and the second ion adsorbent is used for adsorbing the lithium ions.
4. The OLED light-emitting device according to claim 1, wherein a first adsorption layer is arranged between the anode and the hole injection layer, and the first adsorption layer is used for adsorbing metal ions generated by the anode;
a second adsorption layer is arranged between the cathode and the electron injection layer and is used for adsorbing metal ions generated by the cathode;
the first adsorption layer and the second adsorption layer both comprise electrolytes for adsorbing metal ions and nano-ions.
5. The OLED light-emitting device according to claim 4, wherein the first adsorption layer is made of one of polyelectrolyte, polymer brush and inorganic charged nanoparticles;
the second adsorption layer is made of one of polyelectrolyte, polymer brush and inorganic charged nanoparticles.
6. The OLED light-emitting device according to claim 4 or 5, wherein the first absorption layer is used for absorbing indium ions, and the second absorption layer is used for absorbing lithium ions and ytterbium ions.
7. The OLED light-emitting device according to claim 4, wherein the first and second absorption layers have a thickness of 10nm to 15 nm.
8. The OLED light device of claim 1 further comprising an encapsulating cover plate disposed over the cathode.
9. The preparation method of the OLED light-emitting device is characterized by comprising the following steps;
an anode is arranged on a substrate, and a hole injection layer and a hole transport layer are sequentially prepared on the anode;
doping the hole injection layer and the hole transport layer with a first ion adsorbent;
preparing a light-emitting layer, an electron transport layer and an electron injection layer on the hole transport layer;
doping a second ion adsorbent in the electron transport layer and the electron injection layer;
manufacturing a cathode above the electron injection layer;
an encapsulation cover plate covers the cathode.
10. The method of manufacturing an OLED light emitting device according to claim 9,
preparing a first adsorption layer on the anode and preparing the hole injection layer on the first adsorption layer before preparing the hole injection layer on the anode;
preparing a second adsorption layer on the electron injection layer and preparing the cathode on the second adsorption layer before preparing the cathode on the electron injection layer.
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Cited By (1)
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| CN113851597A (en) * | 2021-09-29 | 2021-12-28 | 京东方科技集团股份有限公司 | Serial-type OLED device and display |
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Application publication date: 20200417 |