CN111029425A - Color adhesive film, color solar cell and preparation method thereof - Google Patents
Color adhesive film, color solar cell and preparation method thereof Download PDFInfo
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- CN111029425A CN111029425A CN201911067581.XA CN201911067581A CN111029425A CN 111029425 A CN111029425 A CN 111029425A CN 201911067581 A CN201911067581 A CN 201911067581A CN 111029425 A CN111029425 A CN 111029425A
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- Prior art keywords
- solar cell
- quantum dot
- color
- perovskite quantum
- adhesive film
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- 239000002313 adhesive film Substances 0.000 title claims abstract description 72
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 77
- 239000002096 quantum dot Substances 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000002245 particle Substances 0.000 claims abstract description 11
- 229910052794 bromium Inorganic materials 0.000 claims abstract description 4
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 4
- 229910052740 iodine Inorganic materials 0.000 claims abstract description 4
- 239000000243 solution Substances 0.000 claims description 37
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 24
- 238000006243 chemical reaction Methods 0.000 claims description 22
- 239000011521 glass Substances 0.000 claims description 19
- 229920000642 polymer Polymers 0.000 claims description 16
- 238000003756 stirring Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 238000000576 coating method Methods 0.000 claims description 15
- -1 N, N-dimethylformamide-lead bromide-cesium bromide Chemical compound 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 13
- 239000003292 glue Substances 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 13
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 13
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 12
- 239000011259 mixed solution Substances 0.000 claims description 12
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims description 10
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims description 10
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims description 10
- 239000005642 Oleic acid Substances 0.000 claims description 10
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims description 10
- 230000005540 biological transmission Effects 0.000 claims description 10
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims description 10
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims description 10
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 9
- QGLWBTPVKHMVHM-KTKRTIGZSA-N (z)-octadec-9-en-1-amine Chemical compound CCCCCCCC\C=C/CCCCCCCCN QGLWBTPVKHMVHM-KTKRTIGZSA-N 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 8
- ISWNAMNOYHCTSB-UHFFFAOYSA-N methanamine;hydrobromide Chemical compound [Br-].[NH3+]C ISWNAMNOYHCTSB-UHFFFAOYSA-N 0.000 claims description 8
- KWKAKUADMBZCLK-UHFFFAOYSA-N 1-octene Chemical compound CCCCCCC=C KWKAKUADMBZCLK-UHFFFAOYSA-N 0.000 claims description 7
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 7
- 239000003086 colorant Substances 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 6
- 229920001577 copolymer Polymers 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 6
- 229920002689 polyvinyl acetate Polymers 0.000 claims description 6
- 239000011118 polyvinyl acetate Substances 0.000 claims description 6
- 239000002244 precipitate Substances 0.000 claims description 6
- 239000002243 precursor Substances 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 5
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 5
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadecene Natural products CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 claims description 5
- 238000004806 packaging method and process Methods 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 claims description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052582 BN Inorganic materials 0.000 claims description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 4
- WLZGEDNSZCPRCJ-UHFFFAOYSA-M cesium;octadecanoate Chemical compound [Cs+].CCCCCCCCCCCCCCCCCC([O-])=O WLZGEDNSZCPRCJ-UHFFFAOYSA-M 0.000 claims description 4
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- LLWRXQXPJMPHLR-UHFFFAOYSA-N methylazanium;iodide Chemical compound [I-].[NH3+]C LLWRXQXPJMPHLR-UHFFFAOYSA-N 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- TVMXDCGIABBOFY-UHFFFAOYSA-N n-Octanol Natural products CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 239000005341 toughened glass Substances 0.000 claims description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 3
- 239000005977 Ethylene Substances 0.000 claims description 3
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- JJLJMEJHUUYSSY-UHFFFAOYSA-L Copper hydroxide Chemical compound [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 claims description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 239000012300 argon atmosphere Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000007872 degassing Methods 0.000 claims description 2
- 238000001548 drop coating Methods 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 229940071870 hydroiodic acid Drugs 0.000 claims description 2
- 239000005457 ice water Substances 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- MJFXORGVTOGORM-UHFFFAOYSA-L lead(2+) methanamine dibromide Chemical compound [Pb+2].[Br-].CN.[Br-] MJFXORGVTOGORM-UHFFFAOYSA-L 0.000 claims description 2
- HWSZZLVAJGOAAY-UHFFFAOYSA-L lead(II) chloride Chemical compound Cl[Pb]Cl HWSZZLVAJGOAAY-UHFFFAOYSA-L 0.000 claims description 2
- 239000003446 ligand Substances 0.000 claims description 2
- NQMRYBIKMRVZLB-UHFFFAOYSA-N methylamine hydrochloride Chemical compound [Cl-].[NH3+]C NQMRYBIKMRVZLB-UHFFFAOYSA-N 0.000 claims description 2
- 125000000250 methylamino group Chemical class [H]N(*)C([H])([H])[H] 0.000 claims description 2
- 238000007639 printing Methods 0.000 claims description 2
- 239000000047 product Substances 0.000 claims description 2
- 239000011541 reaction mixture Substances 0.000 claims description 2
- 238000007790 scraping Methods 0.000 claims description 2
- 238000007493 shaping process Methods 0.000 claims description 2
- 230000000087 stabilizing effect Effects 0.000 claims description 2
- 239000006228 supernatant Substances 0.000 claims description 2
- 238000003786 synthesis reaction Methods 0.000 claims description 2
- 230000002194 synthesizing effect Effects 0.000 claims description 2
- 235000019441 ethanol Nutrition 0.000 claims 1
- 239000010410 layer Substances 0.000 description 78
- 239000010408 film Substances 0.000 description 21
- 239000002585 base Substances 0.000 description 10
- 230000031700 light absorption Effects 0.000 description 8
- 230000005525 hole transport Effects 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 150000001768 cations Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PDZKZMQQDCHTNF-UHFFFAOYSA-M copper(1+);thiocyanate Chemical compound [Cu+].[S-]C#N PDZKZMQQDCHTNF-UHFFFAOYSA-M 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- IGNHCVBGBNGYLM-UHFFFAOYSA-N 9H-carbazole 1,1'-spirobi[fluorene] Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1.C1=CC=C2C=C3C4(C=5C(C6=CC=CC=C6C=5)=CC=C4)C=CC=C3C2=C1 IGNHCVBGBNGYLM-UHFFFAOYSA-N 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 229910002971 CaTiO3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M Thiocyanate anion Chemical compound [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003712 anti-aging effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- NCMHKCKGHRPLCM-UHFFFAOYSA-N caesium(1+) Chemical compound [Cs+] NCMHKCKGHRPLCM-UHFFFAOYSA-N 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 229940006165 cesium cation Drugs 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 150000004053 quinones Chemical class 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- NCCSSGKUIKYAJD-UHFFFAOYSA-N rubidium(1+) Chemical compound [Rb+] NCCSSGKUIKYAJD-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a colored adhesive film, which is characterized in that POE, EVA or PVB adhesive film is doped with perovskite quantum dot sensitized material which is CH3NH3PbX3Or CsPbX3Wherein X is any one of Br, I and Cl, and the particle size of the material particles is 3 nm-10 mu m. The invention also discloses a preparation method of the color adhesive film, a color solar cell using the color adhesive film and a preparation method of the color solar cell. The method of the invention improves the color saturation of the color solar cell prepared by the color adhesive film and improves the stability of the color solar cell, so that the color solar cell can be used outdoors for a long time.
Description
Technical Field
The invention belongs to the technical field of color solar cell preparation, and particularly relates to a color adhesive film, a color solar cell and a preparation method thereof.
Background
At present, color solar cells are increasingly used. The market demand for color solar cells also remains in the aesthetic aspect, and needs higher power generation efficiency, long outdoor service life, low cost and wide selectable color range. Common methods for preparing a color solar cell include using a color back plate, color packaging glass, a color adhesive film and the like, and plating a plurality of antireflection layers and oxide thin films on the surface of the cell. However, these methods use inorganic and organic materials, and some absorption may occur in the visible to infrared region, which greatly reduces the power generation efficiency of the battery. And the preparation process is relatively complex, the cost is relatively high, the stability is relatively low, and large-scale production cannot be carried out. Although some color organic solar cells, polymer solar cells and dye-sensitized solar cells can be made into various colors, the commercial popularization is difficult due to the complex preparation process and low photoelectric conversion efficiency.
Disclosure of Invention
The invention aims to solve the technical problem of providing a color adhesive film and a color solar cell with low cost and simple preparation process and a preparation method thereof. The invention improves the aesthetic degree of the solar cell on the basis of not influencing the efficiency of the cell, has simple preparation process, is suitable for large-scale production, and can ensure that the perovskite quantum dot material can not fade after long-term use and can not be decomposed under strong ultraviolet irradiation. The invention improves the color saturation of the color solar cell and the stability thereof, and can be used outdoors for a long time.
The invention is realized in such a way that a color adhesive film is provided, the color adhesive film is made of any adhesive film material of transparent ethylene-octene copolymer (POE), polyethylene-polyvinyl acetate copolymer (EVA) and polyvinyl butyral (PVB), a perovskite quantum dot sensitized material with color is doped in the color adhesive film, and the molecular formula of the perovskite quantum dot sensitized material is CH3NH3PbX3Or CsPbX3Wherein X is any one of Br, I and Cl. The particle size of the perovskite quantum dot sensitized material particles is 3 nm-10 mu m.
The invention is realized in such a way, and also provides a preparation method of the colored adhesive film, which comprises the following steps: adding the perovskite quantum dot sensitized material into any one of a film material of a copolymer (POE) of ethylene and octene, a polyethylene-polyvinyl acetate copolymer (EVA) and polyvinyl butyral (PVB) in a solution state or a powder state, uniformly mixing, extruding the mixture to obtain a film containing the perovskite quantum dot sensitized material, or depositing the mixture on the surface of a glass substrate in a blade coating mode, and drying to obtain the film containing the perovskite quantum dot sensitized material.
The invention is realized in such a way, and further provides a color solar cell, which comprises a solar cell piece, wherein the color adhesive films are respectively arranged on the upper surface and the lower surface of the solar cell piece, or the color adhesive films prepared by the preparation method of the color adhesive films are respectively arranged on the upper surface and the lower surface of the solar cell piece, wherein the solar cell piece comprises a substrate layer, a photoelectric conversion layer, a transmission layer and an electrode layer, and the solar cell piece is any one of a perovskite solar cell piece, an amorphous silicon solar cell piece, a monocrystalline and polycrystalline silicon solar cell piece, a cadmium telluride solar cell piece, a copper indium gallium selenide solar cell piece, a dye sensitized solar cell piece, an organic solar cell piece and a polymer solar cell piece.
The invention is realized in such a way, and also provides a preparation method of the color solar cell, which comprises the following steps: and laying the colored adhesive films on the upper surface and/or the lower surface of the solar cell respectively, placing toughened glass on the upper surface of the colored adhesive film, placing lower packaging glass below the lower surface of the colored adhesive film, and finally placing the assembled assembly into a laminating machine for laminating to finish the processing of the colored solar cell.
Compared with the prior art, the color adhesive film, the solar cell and the preparation method thereof have the advantages that the perovskite quantum dot sensitized material is doped in the POE, EVA or PVB adhesive film, and the color adhesive film containing the perovskite quantum dots with different colors is prepared by adjusting the particle size, the composition and the band gap of the perovskite quantum dot sensitized material and the weight ratio of the adhesive film material, so that the prepared color adhesive film has higher color purity, wide color selectable range, good anti-aging effect and long service life, and the preparation method is simple and easy to operate. Meanwhile, the color saturation of the color solar cell prepared by the color adhesive film is also improved, and the stability and the weather resistance of the color solar cell are improved, so that the color solar cell can be used outdoors for a long time.
Drawings
FIG. 1 is a schematic view of the internal structure of a solar cell containing a color adhesive film according to the present invention;
FIG. 2 is a schematic diagram of the internal structure of a perovskite solar cell;
FIG. 3 is a schematic diagram of the internal structure of an amorphous silicon solar cell;
fig. 4 is a schematic view of the internal structure of a single crystalline silicon solar cell or a polycrystalline silicon solar cell;
FIG. 5 is a schematic view of the internal structure of a cadmium telluride solar cell sheet;
fig. 6 is a schematic diagram of the internal structure of a copper indium gallium selenide solar cell;
FIG. 7 is a schematic view of the internal structure of a dye-sensitized solar cell;
fig. 8 is a schematic view of the internal structure of an organic solar cell or a polymer solar cell;
FIG. 9 shows CsPbBr prepared by the method of the present invention3Testing the damp-heat performance of the perovskite solar cell with the green glue film, and doping 5%, 10% and 15% CsPbBr by different weights3And comparing the test results after quantum dots.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In a preferred embodiment of the color adhesive film of the present invention, the color adhesive film is made of any one of transparent ethylene-octene copolymer (POE), polyethylene-polyvinyl acetate copolymer (EVA), and polyvinyl butyral (PVB), the color adhesive film is doped with a colored perovskite quantum dot sensitized material, and the color adhesive film containing perovskite quantum dots with different colors is obtained by adjusting the particle size, composition, band gap, and weight ratio of the perovskite quantum dot sensitized material to the adhesive film material.
The perovskite quantum dot is sensitiveThe molecular formula of the chemical material is CH3NH3PbX3Or CsPbX3Wherein X is any one of Br, I and Cl, and the particle size of the perovskite quantum dot sensitized material particles is between 3nm and 10 mu m. The thickness of the color adhesive film is 0.1 mm-1 mm. Perovskite quantum dot sensitized materials with different colors can be obtained according to different particle sizes of the materials. The color is mainly yellow, orange, red, green, blue and purple.
The invention also discloses a preparation method of the colored adhesive film, which comprises the following steps: adding the perovskite quantum dot sensitized material into any one of a film material of a copolymer (POE) of ethylene and octene, a polyethylene-polyvinyl acetate copolymer (EVA) and polyvinyl butyral (PVB) in a solution state or a powder state, uniformly mixing, extruding the mixture to obtain a film containing the perovskite quantum dot sensitized material, or depositing the mixture on the surface of a glass substrate in a blade coating mode, and drying to obtain the film containing the perovskite quantum dot sensitized material.
Referring to fig. 1, the invention also discloses a color solar cell, which has a structural form shown in fig. 1. The color solar cell comprises a solar cell sheet 1, wherein the color adhesive films 2 and 3 are respectively arranged on the upper surface and the lower surface of the solar cell sheet 1, or the color adhesive films prepared by the preparation method of the color adhesive films are respectively arranged on the upper surface and the lower surface of the solar cell sheet 1.
The invention also discloses a preparation method of the color solar cell, which comprises the following steps: and (3) respectively laying the color adhesive films 2 and 3 on the upper surface and the lower surface of the solar cell piece 1, placing toughened glass 4 above the color adhesive film 2 on the upper surface, placing lower packaging glass 5 below the color adhesive film 3 on the lower surface, and finally placing the assembled assembly into a laminating machine for laminating, so that the processing of the color perovskite solar cell is completed.
Specifically, the solar cell sheet 1 includes a base layer 6, a photoelectric conversion layer 7, a transfer layer 8, and an electrode layer 9. The solar cell piece 1 is any one of a perovskite solar cell piece, an amorphous silicon solar cell piece, a monocrystalline silicon solar cell piece, a polycrystalline silicon solar cell piece, a cadmium telluride solar cell piece, a copper indium gallium selenide solar cell piece, a dye-sensitized solar cell, an organic solar cell and a polymer solar cell.
As shown in fig. 2, with respect to the perovskite solar cell, the base layer 6 is conductive glass, the photoelectric conversion layer 7 is a perovskite light absorption layer, the transfer layer 8 is a first carrier transfer layer and a second carrier transfer layer, and the electrode layer 9 is a top electrode.
Specifically, in the figure, the first carrier transport layer may be an electron transport layer or a hole transport layer, and the second carrier transport layer may also be an electron transport layer or a hole transport layer. Specifically, the first carrier transport layer is an electron transport layer or a hole transport layer, and correspondingly, the second carrier transport layer is a hole transport layer or an electron transport layer. The electron transport layer and the hole transport layer are respectively prepared by any one of spin coating, blade coating, spraying, screen printing, sputtering, evaporation, atomic layer deposition and chemical vapor deposition.
Specifically, the electron transport layer is prepared from a material with a band gap of 3.0 eV-6.0 eV, and the material for preparing the electron transport layer comprises the following components: imide compounds, quinone compounds, fullerene and its derivatives, metal oxides of Cd, Zn, In, Pb, Mo, W, Sb, Bi, Cu, Hg, Ti, Ag, Mn, Fe, V, Sn, Zr, Sr, Ga and Cr, SrTiO3And CaTiO3Perovskite oxide of (1), and LiF, CaF2MgO and SiO2In the above-mentioned embodiments, the thickness of the electron transport layer is 10nm to 100 nm.
Specifically, the thickness of the hole transport layer is 5 nm-30 nm, and the material for preparing the hole transport layer comprises: 2,2',7,7' -tetra (N, N-P-methoxyanilino) -9,9' -spirobifluorene (Spiro-MeOTAD), methoxytriphenylamine-fluorocarboxamidine (OMeTPA-FA), poly (3, 4-ethylenedioxythiophene): poly (styrene sulfonic) (PEDOT: PSS), poly-3 hexylthiophene (P3 HT), cuprous thiocyanate (CuSCN), Nickel Oxide (Nickel Oxide), triptycene-cored triphenylamine (H101), 3, 4-ethylenedioxythiophene-methoxytriphenylamine (EDOT-OMeTPA), N- (4-aniline) carbazole-spirobifluorene (CzPAF-SBF), and polythiophene.
Specifically, the perovskite light absorption layer is prepared from a material with a band gap not larger than 3.0eV, the thickness of the perovskite light absorption layer is 100 nm-1000 nm, and the perovskite light absorption layer is prepared by any one of a solution method, a blade coating method, a chemical vapor deposition method and an evaporation method. The molecular structure form of the perovskite light absorption layer is AMX3Wherein A is a monovalent cation, including methylamine Cation (CH)3NH3 +) Formamidine cation (NH)2CHNH2+) Cesium cation (Cs)+) And rubidium cation (Rb)+) Any one of alkali metals, M is a divalent cation including transition metal and any one of divalent cations of group 13 to 15 elements, and X is a monovalent anion including halide ion or thiocyanate ion (SCN)-) Any one of the monovalent anions of (a).
Specifically, the material for preparing the perovskite light absorption layer comprises MAPbI3、MAPbBr3、MAPbIxBr3-x、MAPbIxCl3-x、FAPbI3、FAPbBr3、FAPbIxBr3-x、FAPbIxCl3-x、BAPbI3、BAPbBr3、BAPbIxBr3-x、BAPbIxCl3-x、MASnI3、MASnBr3、MASnI3BR3-x、FASnI3、FASnBr3、FASnIxBr3-x、FASnIxCl3-x、BASnI3、BASnBr3、BASnIxBr3-x、BASnIxCl3-at least one compound of formula x.
The thickness of the back electrode layer is 80 nm-200 nm, and the material for preparing the back electrode layer is any one of metals of platinum, gold, copper, silver, aluminum, rhodium, indium, titanium, iron, nickel, tin and zinc and alloys containing the metals.
As shown in fig. 3, for an amorphous silicon solar cell, the base layer 6 is a glass base, the photoelectric conversion layer 7 is amorphous silicon, the transmission layer 8 is boron-doped P-type silicon and phosphorus-doped N-type silicon, and the electrode layer 9 is a transparent electrode and a back electrode.
As shown in fig. 4, for the monocrystalline silicon solar cell and the polycrystalline silicon solar cell, the base layer 6 is a glass base, the photoelectric conversion layer 7 is a PN junction layer, the transmission layer 8 is a P-type layer and an N-type layer, and the electrode layer 9 is a comb-shaped electrode and a back electrode.
As shown in fig. 5, for a cadmium telluride solar cell, the base layer 6 is a glass substrate, the photoelectric conversion layer 7 is a cadmium telluride absorbing layer, the transmission layer 8 is a cadmium sulfide window layer, and the electrode layer 9 is a back electrode and a transparent conductive electrode.
As shown in fig. 6, for the cigs solar cell, the base layer 6 is a glass substrate, the photoelectric conversion layer 7 is a cigs absorption layer, the transmission layer 8 is a transparent conductive electrode, and the electrode layer 9 is a top electrode and a back electrode.
As shown in fig. 7, for the dye-sensitized solar cell, the base layer 6 is a glass substrate, the photoelectric conversion layer 7 is a photoanode containing a dye sensitizer, the transmission layer 8 is an electrolyte, and the electrode layer 9 is a counter electrode.
As shown in fig. 8, with respect to the organic solar cell and the polymer solar cell, the base layer 6 is conductive glass, the photoelectric conversion layer 7 is an organic light absorption layer or a polymer molecule light absorption layer, the transmission layer 8 is a first carrier transmission layer and a second carrier transmission layer, and the electrode layer 9 is a top electrode.
The color adhesive film is not only applied to the preparation of perovskite color solar cells, but also can be used on electroluminescent devices, light emitting diodes, lasers, X-ray imagers and photodetectors, and can be applied to crystalline silicon cells, cadmium telluride solar cells, copper indium gallium selenide solar cells, dye sensitized solar cells, organic solar cells and polymer solar cells, so that illumination devices on the color adhesive film have various colors.
The following will further illustrate the preparation method of the color perovskite solar cell of the present invention with reference to specific examples.
Example 1
As a first method for manufacturing a color perovskite solar cell of the present invention, the method comprises the steps of:
11) firstly, preparing a perovskite quantum dot sensitized material CsPbX3The method comprises the following steps: sequentially adding 15mL of Octadecene (ODE) (solvent), 3mL of oleylamine, 1.5mL of oleic acid and 0.2g of lead bromide into a 100mL container, heating at 100 ℃ for 100min for degassing, stirring at 100 ℃ for half an hour, heating at 170 ℃ for 10min in an argon atmosphere, and obtaining a mixed solution of oleic acid and lead bromide for later use; and dissolving 0.55mL of cesium stearate (CsSt) solution in octadecene to a concentration of 0.15M, adding the solution into the prepared mixed solution of oleic acid, oleylamine and lead bromide, raising the reaction temperature to 180 ℃ for reaction for half an hour, cooling the reaction mixture in an ice water bath, finally recrystallizing with 20mL of acetone, centrifuging to obtain a powdery perovskite quantum dot sensitized material, and dispersing the powdery perovskite quantum dot sensitized material into 1-octane to obtain a liquid-soluble perovskite quantum dot sensitized material. The prepared perovskite quantum dot sensitized material is orange, green, purple and blue in color.
12) Secondly, preparing a color adhesive film, and mixing the solution CsPbX3Adding the perovskite quantum dot sensitized material into the POE raw material, heating and stirring to uniformly mix the perovskite quantum dot sensitized material and the POE raw material, extruding the mixture into a sheet-shaped adhesive film by using an extruder at the temperature of 80 ℃, and shaping and cooling the adhesive film to obtain the POE adhesive film.
13) Coating a protective layer on the color adhesive film again, depositing a layer of transparent Polydimethylsiloxane (PDMS) protective layer on the upper surface and the lower surface of the cooled POE adhesive film by a blade coating method, drying at 50 ℃, and finally obtaining the glue film containing CsPbX3POE color glue film of perovskite quantum dot sensitized material.
14) And finally, preparing the perovskite solar cell containing the color adhesive film, laying the color adhesive films 2 and 3 prepared in the step 13) on the upper surface and the lower surface of the perovskite layer solar cell piece 1, placing toughened glass 4 above the upper color adhesive film 2, placing lower packaging glass 5 below the lower color adhesive film 3, and finally placing the assembled assembly into a laminating machine for processing to finish the processing of the perovskite solar cell. The processing parameters of the laminating machine are as follows: the laminate was laminated for 800s at a pressure of 80kPa and a temperature of 100 ℃.
Example 2
As a second method for manufacturing a color perovskite solar cell of the present invention, the method comprises the steps of:
21) firstly, preparing a perovskite quantum dot sensitized material CsPbX3The method comprises the following steps: dissolving 0.6mmol of lead bromide and 0.6mmol of cesium bromide (CsBr) in 10mL of N, N-dimethylformamide, stirring for 24h, adding 2mL of oleic acid and 1mL of oleylamine as ligands for stabilizing a precursor solution of the N, N-dimethylformamide-lead bromide-cesium bromide, subsequently adding 1mL of the above solution into 0.2g of boron nitride and 10mL of toluene solution, stirring for 1h at room temperature, finally washing the precipitate with hexane, and drying the precipitate in an oven at 40 ℃ to obtain the boron nitride protected CsPbBr3And dispersing the perovskite quantum dot sensitized material in a powder state into 1-octane to obtain the perovskite quantum dot sensitized material in a solution state.
22) Secondly, preparing a color glue film, namely CsPbBr3Adding 1mL of solution of perovskite quantum dot sensitized material and 0.5g of EVA polymer (containing 28% of vinyl acetate) into 5mL of chlorobenzene, stirring at 80 ℃ for 2h until the EVA polymer is completely dissolved to obtain a mixed solution, then coating the mixed solution on a quartz substrate by scraping, drying at 50 ℃ to form a film, and finally peeling the film from the quartz substrate to obtain the perovskite quantum dot sensitized material doped with CsPbBr3A color glue film of perovskite quantum dot sensitized material.
23) And coating a protective layer on the color adhesive film again in the same way as the step 13).
24) And finally, preparing the perovskite solar cell containing the color glue film, wherein the method is the same as the step 14).
CsPbBr prepared in this example3The perovskite solar cell of the green glue film is subjected to a damp heat performance test, and FIG. 9 shows that the perovskite solar cell is subjected to a temperature of 85 DEGoC, damp heat stability data at 85% humidity. Three in the figureThe curves represent the CsPbBr-containing curves, respectively3Green EVA film, CsPbBr3The energy conversion efficiency of the perovskite solar cell is 5%, 10% and 15% respectively according to the change rule of the aging time. As can be seen from the figure, after 1000h aging, the perovskite quantum dots CsPbBr are present3The perovskite solar cell with the green glue film still has good stability, and the energy conversion efficiency is equivalent to the initial energy conversion efficiency value. Incorporation of different weight percentages of 5%, 10% and 15% CsPbBr3After quantum dots, the color of the green EVA adhesive film follows CsPbBr3The content increases and deepens.
Example 3
As a third method for manufacturing a color perovskite solar cell of the present invention, the method includes the steps of:
31) perovskite quantum dot sensitized material CH3NH3PbX3The preparation method comprises the following steps: synthesis of halogenated methylamine (CH)3NH3X), dissolving methylamine in absolute ethanol, cooling to zero degree centigrade, adding corresponding acid, taking methylamine bromide as an example, adding hydrobromic acid into the reaction solution, stirring the reaction solution for 2 hours, using a rotary evaporator to spin out solvent ethanol at 50 ℃ and 0.2Mpa, then washing the precipitate with diethyl ether three times, and drying for 24 hours in a vacuum environment to obtain methylamine bromide product, wherein methylamine iodide is synthesized if hydrobromic acid is replaced by hydroiodic acid. Then mixing the synthesized methylamine bromide (0.5mmol) and lead bromide (0.5mmol), dissolving the mixture in 10mL of N, N-dimethylformamide, adding 60 muL of oleylamine and 1mL of oleic acid to form a precursor solution of methylamine lead bromide, dissolving the precursor solution in 20mL of toluene, continuously stirring until a uniform green solution is formed, and finally centrifuging (the rotation speed is 10000rpm and 10 min) and taking out the supernatant to obtain the perovskite quantum dot sensitized material CH3NH3PbBr3The ink of (1). Wherein methylamine bromide is replaced by methylamine chloride, methylamine iodide or methylamine compound containing one or more halogen atoms, and lead bromide is replaced by lead iodide or lead chloride for synthesizing perovskite quantum dots CH with different colors3NH3PbX3And (3) printing ink.
32) 2g of EVA polymer was added to 50mL of toluene solution, and CH was added3NH3PbX3Adding a solution of a perovskite quantum dot sensitized material into a toluene solution of an EVA polymer to obtain a mixed solution, introducing inert gas at room temperature, stirring for 24 hours, coating the stirred mixed solution on a glass substrate in a drop coating or blade coating mode, drying for 12 hours in a vacuum oven at 60 ℃ to form a film, and finally peeling the film from the glass substrate to obtain the material doped with CH3NH3PbX3A color glue film of perovskite quantum dot sensitized material.
33) And coating a protective layer on the color adhesive film again in the same way as the step 13).
34) And finally, preparing the perovskite solar cell containing the color glue film, wherein the method is the same as the step 14).
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. The color adhesive film is characterized by being prepared from any one of transparent ethylene-octene copolymer (POE), polyethylene-polyvinyl acetate copolymer (EVA) and polyvinyl butyral (PVB), a color perovskite quantum dot sensitized material is doped in the color adhesive film, and the molecular formula of the perovskite quantum dot sensitized material is CH3NH3PbX3Or CsPbX3Wherein X is any one of Br, I and Cl, and the particle size of the perovskite quantum dot sensitized material particles is between 3nm and 10 mu m.
2. The method for preparing a colored adhesive film according to claim 1, comprising the following steps: adding the perovskite quantum dot sensitized material into any one of a film material of a copolymer (POE) of ethylene and octene, a polyethylene-polyvinyl acetate copolymer (EVA) and polyvinyl butyral (PVB) in a solution state or a powder state, uniformly mixing, extruding the mixture to obtain a film containing the perovskite quantum dot sensitized material, or depositing the mixture on the surface of a glass substrate in a blade coating mode, and drying to obtain the film containing the perovskite quantum dot sensitized material.
3. The method for preparing a colored adhesive film according to claim 2, wherein the perovskite quantum dot sensitized material CsPbX3The preparation method specifically comprises the following steps: sequentially adding 15mL of octadecene (solvent), 3mL of oleylamine, 1.5mL of oleic acid and 0.2g of lead bromide into a 100mL container, heating at 100 ℃ for 100min for degassing, stirring at 100 ℃ for half an hour, and heating at 170 ℃ for 10min in an argon atmosphere to obtain a mixed solution of oleic acid and lead bromide for later use; and dissolving 0.55mL of cesium stearate (CsSt) solution in octadecene to a concentration of 0.15M, adding the solution into the prepared mixed solution of oleic acid, oleylamine and lead bromide, raising the reaction temperature to 180 ℃ for reaction for half an hour, cooling the reaction mixture in an ice water bath, finally recrystallizing with 20mL of acetone, centrifuging to obtain a powdery perovskite quantum dot sensitized material, and dispersing the powdery perovskite quantum dot sensitized material into 1-octane to obtain a liquid-soluble perovskite quantum dot sensitized material.
4. The method for preparing a colored adhesive film according to claim 3, wherein CsPbX in a solution state is added3Adding the perovskite quantum dot sensitized material into POE raw materials, heating and stirring to uniformly mix the materials, extruding the materials into a sheet-shaped adhesive film by using a double-screw extruder, shaping and cooling the adhesive film to finally obtain the CsPbX-containing material3POE color glue film of perovskite quantum dot sensitized material.
5. The method for preparing a colored adhesive film according to claim 2, wherein the perovskite quantum dot sensitized material CsPbX3The preparation method specifically comprises the following steps: 0.6mmol of lead bromide and 0.6mmol of cesium bromide were dissolved in 10mL of N, N-dimethylformamideAfter stirring for 24 hours, adding 2mL of oleic acid and 1mL of oleylamine as ligands for stabilizing a precursor solution of N, N-dimethylformamide-lead bromide-cesium bromide, then adding 1mL of the solution into 0.2g of boron nitride and 10mL of toluene solution, stirring for 1 hour at room temperature, finally washing the precipitate with hexane, and drying the precipitate in an oven at 40 ℃ to obtain the boron nitride protected CsPbBr3And dispersing the perovskite quantum dot sensitized material in a powder state into 1-octane to obtain the perovskite quantum dot sensitized material in a solution state.
6. The method for preparing a colored film as claimed in claim 5, wherein CsPbBr is added3Adding 1mL of solution of perovskite quantum dot sensitized material and 0.5g of EVA polymer (containing 28% of vinyl acetate) into 5mL of chlorobenzene, stirring at 80 ℃ for 2h until the EVA polymer is completely dissolved to obtain a mixed solution, then coating the mixed solution on a quartz substrate by scraping, drying at 50 ℃ to form a film, and finally peeling the film from the quartz substrate to obtain the perovskite quantum dot sensitized material doped with CsPbBr3A color glue film of perovskite quantum dot sensitized material.
7. The method for preparing a colored adhesive film according to claim 2, wherein the perovskite quantum dot sensitized material CH3NH3PbX3The preparation method specifically comprises the following steps: synthesis of halogenated methylamine (CH)3NH3X), dissolving methylamine in absolute ethyl alcohol, cooling to zero centigrade, adding corresponding acid, taking methylamine bromide as an example, adding hydrobromic acid into the reaction solution, then stirring the reaction solution for 2 hours, using a rotary evaporator to spin out solvent ethanol, wherein the temperature is 50 ℃, the pressure is 0.2Mpa, then using ethyl ether to wash the precipitate for three times, and drying for 24 hours in a vacuum environment to obtain a methylamine bromide product, wherein if the hydrobromic acid is replaced by hydroiodic acid to synthesize methylamine iodide; then, after mixing the synthesized methylamine bromide (0.5mmol) with lead bromide (0.5mmol), dissolving the mixture in 10mL of N, N-dimethylformamide, adding 60 μ L of oleylamine and 1mL of oleic acid to form a precursor solution of methylamine lead bromide, and then mixing the solutionDissolving the precursor solution in 20mL of toluene, continuously stirring until a uniform green solution is formed, finally centrifuging (the rotation speed is 10000rpm, 10 min), and taking out supernatant to obtain the perovskite-containing quantum dot sensitized material CH3NH3PbBr3The ink is characterized in that methylamine bromide is replaced by methylamine chloride, methylamine iodide or methylamine compound containing one or more halogen atoms, and lead bromide is replaced by lead iodide or lead chloride for synthesizing perovskite quantum dots CH with different colors3NH3PbX3And (3) printing ink.
8. The method for preparing a colored adhesive film according to claim 7, wherein 2g of EVA polymer is added to 50mL of toluene solution, and CH is added3NH3PbX3Adding a solution of a perovskite quantum dot sensitized material into a toluene solution of an EVA polymer to obtain a mixed solution, introducing inert gas at room temperature, stirring for 24 hours, coating the stirred mixed solution on a glass substrate in a drop coating or blade coating mode, drying for 12 hours in a vacuum oven at 60 ℃ to form a film, and finally peeling the film from the glass substrate to obtain the material doped with CH3NH3PbX3A color glue film of perovskite quantum dot sensitized material.
9. A color solar cell comprises a solar cell piece, and is characterized in that the color adhesive film according to claim 1 is respectively arranged on the upper surface and the lower surface of the solar cell piece, or the color adhesive film prepared by the preparation method of the color adhesive film according to any one of claims 2 to 8 is respectively arranged on the upper surface and the lower surface of the solar cell piece, wherein the solar cell piece comprises a substrate layer, a photoelectric conversion layer, a transmission layer and an electrode layer, and is any one of a perovskite solar cell piece, an amorphous silicon solar cell piece, a monocrystalline silicon solar cell piece, a polycrystalline silicon solar cell piece, a cadmium telluride solar cell piece, a copper indium gallium selenide solar cell piece, a dye sensitized solar cell piece, an organic solar cell piece and a polymer solar cell piece.
10. A method for manufacturing a color solar cell according to claim 9, comprising the steps of: and laying the colored adhesive films on the upper surface and/or the lower surface of the solar cell respectively, placing toughened glass on the upper surface of the colored adhesive film, placing lower packaging glass below the lower surface of the colored adhesive film, and finally placing the assembled assembly into a laminating machine for laminating to finish the processing of the colored solar cell.
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CN115157735A (en) * | 2022-08-12 | 2022-10-11 | 华中科技大学鄂州工业技术研究院 | Preparation method of composite thick film |
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