CN111010139B - Bulk acoustic wave resonator, filter, and electronic device - Google Patents
Bulk acoustic wave resonator, filter, and electronic device Download PDFInfo
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- CN111010139B CN111010139B CN201910882208.3A CN201910882208A CN111010139B CN 111010139 B CN111010139 B CN 111010139B CN 201910882208 A CN201910882208 A CN 201910882208A CN 111010139 B CN111010139 B CN 111010139B
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention relates to a bulk acoustic wave resonator comprising: a substrate; an acoustic mirror; a bottom electrode; a top electrode; the piezoelectric layer, the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode are overlapped in the thickness direction of the substrate, and the area is an effective area of the resonator; an additional structure arranged in the same layer as the top electrode, the additional structure having a gap from the top electrode in a radial direction separating the two; and an insertion layer disposed along an edge of the effective region, the insertion layer including a first insertion portion disposed below the additional structure in a thickness direction of the resonator, and the first insertion portion overlapping the additional structure in a top view of the resonator, the first insertion portion being formed of air or a dielectric material. The invention also relates to a filter and an electronic device.
Description
Technical Field
Embodiments of the present invention relate to the field of semiconductors, and more particularly, to a bulk acoustic wave resonator, a filter, and an electronic device having one of the above components.
Background
The bulk acoustic wave filter has the advantages of low insertion loss, high rectangular coefficient, high power capacity and the like, and is widely applied to contemporary wireless communication systems, thereby being an important component for determining the quality of radio frequency signals entering and exiting the communication system. The performance of a bulk acoustic wave filter is determined by the bulk acoustic wave resonator that makes up it, such as: the resonant frequency of the bulk acoustic wave resonator determines the operating frequency of the filter, the effective electromechanical coupling coefficient determines the bandwidth of the filter, and the quality factor determines the insertion loss of the filter. The quality factor of the filter structure, particularly at the series resonant frequency and the parallel resonant frequency (or series-parallel impedance), can significantly affect the passband insertion loss when it is set. Therefore, how to improve the quality factor of the resonator is an important issue in the design of high performance filters. The quality factor (Qs) or series impedance (Rs) at the bulk acoustic wave resonator series resonant frequency is typically determined by electrode loss and material loss, while the quality factor (Qp) or parallel impedance (Rp) at the bulk acoustic wave resonator parallel resonant frequency is typically affected by boundary acoustic wave leakage. Therefore, when the resonator material, and the laminated structure are determined, the lifting space of Qs (or Rs) is limited, but the boundary leakage condition of the acoustic wave can be effectively improved by changing the boundary structure of the resonator, thereby remarkably improving the Qp (or Rp) of the resonator.
A schematic cross-sectional structure of a conventional film bulk acoustic resonator is shown in fig. 1, in which: 100 is a substrate, 110 is an acoustic mirror, 120 is a bottom electrode, 130 is a piezoelectric layer, 140 is a top electrode, 150 is an additional structure, and 160 is a passivation layer.
In fig. 1, the area indicated at 220 is the active area of the resonator and the area indicated at 210 is the gap between the additional structure and the active area. A passivation layer 160 fills the gap 210 and covers at least a portion of the additional structure and/or at least a portion of the top electrode. The above-mentioned gap may improve the sub-resonance effect due to the additional structure, thereby improving the Rp of the resonator to some extent. However, the conventional gap structure described above does not sufficiently improve the problem of energy leakage at the edge of the effective region of the resonator, and thus is limited in the extent of improvement of Rp.
Disclosure of Invention
The present invention is proposed to further increase the Rp value of the bulk acoustic wave resonator.
According to an aspect of an embodiment of the present invention, there is provided a bulk acoustic wave resonator including:
a substrate;
an acoustic mirror;
a bottom electrode;
a top electrode;
the piezoelectric layer, the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode are overlapped in the thickness direction of the substrate, and the area is an effective area of the resonator;
an additional structure arranged in the same layer as the top electrode, the additional structure having a gap from the top electrode in a radial direction separating the two; and
an insertion layer disposed along an edge of the effective region, the insertion layer including a first insertion portion disposed below the additional structure in a thickness direction of the resonator, and the first insertion portion overlapping the additional structure in a plan view of the resonator, the first insertion portion being formed of air or a dielectric material.
Optionally, in a top view of the resonator, in a region corresponding to the additional structure, an inner end of the first insertion portion is outside an inner end of the additional structure. Further, in a top view of the resonator, a distance in a radial direction between an inner end of the first insertion portion and an outer end of the additional structure is in a range of 0-10 μm, and further in a range of 1-4.5um, in a region corresponding to the additional structure.
Optionally, the thickness of the interposer layer is in the range of 20A-5000A.
Optionally, the dielectric material is at least one of the following materials and combinations thereof: silicon dioxide (SiO) 2 ) Silicon nitride (Si 3 N 4 ) Silicon carbide (SiC), aluminum nitride (AlN), aluminum oxide (Al 2 O 3 ) Porous silicon, fluorinated amorphous carbon, fluoropolymers, parylene, polyarylether, hydrogen silsesquioxane, crosslinked polyphenyl polymers, bisbenzocyclobutene, fluorinated silica, carbon doped oxides, and diamond.
Optionally, the first insertion portion is integrally disposed in the piezoelectric layer.
Optionally, in a top view of the resonator, the outer end of the first insertion portion extends outside the outer end of the additional structure in a region corresponding to the additional structure. Further, in a plan view of the resonator, an outer end of the first insertion portion extends to an outside of an outer end of the bottom electrode in a region corresponding to the additional structure. Further, in a top view of the resonator, a distance between an outer end of the first insertion portion and an outer end of the additional structure in a radial direction is in a range of 0-20 μm in a region corresponding to the additional structure.
Optionally, the first insert is a flat layer. Or alternatively, the first insertion portion is a step layer, and a portion overlapping with the additional structure in a plan view of the resonator is a flat portion.
Optionally, at least a portion of the first insertion portion is disposed at an intermediate position of a corresponding portion of the piezoelectric layer in a thickness direction of the piezoelectric layer.
Alternatively, in a cross-sectional view parallel to the thickness direction of the resonator, the outer end of the portion of the piezoelectric layer below the first insertion portion is located outside the outer end of the portion of the piezoelectric layer above the first insertion portion in the radial direction. Further alternatively, in a cross-sectional view parallel to the thickness direction of the resonator, the outer end of the additional structure is aligned with the outer end of the portion of the piezoelectric layer above the first insertion portion.
Optionally, the resonator includes an electrode electrical connection portion electrically connected to the top electrode; the interposer is a ring-shaped interposer, and the interposer further includes a second interposer that forms a ring with the first interposer, at least a portion of the second interposer being located within an active region in a top view of the resonator. Further, a portion of the top electrode connected to the electrode electrical connection portion is provided with a protruding structure, and at least a portion of the second insertion portion overlaps with the protruding structure in a plan view of the resonator. Optionally, the distance between the inner end of the second insertion portion and the edge of the effective area in the radial direction is in the range of 0-10 μm; and/or the distance of the outer end of the second insertion portion from the edge of the effective area in the radial direction is in the range of 0-20 μm.
Optionally, the first insertion portion is disposed between the additional structure and a top surface of the piezoelectric layer.
Optionally, the interposer layer is disposed between a first piezoelectric layer portion and a second piezoelectric layer portion, where the first piezoelectric layer portion and the second piezoelectric layer portion form the piezoelectric layer, and a material forming the first piezoelectric layer portion is different from a material forming the second piezoelectric layer portion.
According to a further aspect of an embodiment of the present invention, a filter is presented, comprising the resonator described above.
According to a further aspect of embodiments of the present invention, an electronic device is presented, comprising the resonator described above, or the filter described above.
Drawings
These and other features and advantages of the various embodiments of the disclosed invention will be better understood from the following description taken in conjunction with the accompanying drawings, in which like reference characters designate like parts throughout the several views, and wherein:
fig. 1 is a schematic cross-sectional view of a bulk acoustic wave resonator of the prior art;
fig. 2 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the invention;
FIG. 2A is a schematic partial cross-sectional view taken along line O-C in FIG. 2, according to an exemplary embodiment of the invention;
FIG. 2B is a schematic partial cross-sectional view taken along line O-I in FIG. 2, according to an exemplary embodiment of the invention;
FIG. 2C is a schematic partial cross-sectional view taken along line O-C in FIG. 2 in accordance with another exemplary embodiment of the invention;
FIG. 2D is a schematic partial cross-sectional view taken along line O-C in FIG. 2 in accordance with yet another exemplary embodiment of the invention;
FIG. 2E is a schematic partial cross-sectional view taken along line O-C in FIG. 2 in accordance with yet another exemplary embodiment of the invention;
FIG. 2F is a schematic partial cross-sectional view taken along line O-C in FIG. 2 in accordance with yet another exemplary embodiment of the invention;
FIG. 2G is a schematic partial cross-sectional view taken along line O-C in FIG. 2 in accordance with yet another exemplary embodiment of the invention;
FIG. 2I is a schematic partial cross-sectional view taken along line O-C in FIG. 2 in accordance with yet another exemplary embodiment of the invention;
FIG. 3 is an enlarged schematic view of the region S11 in FIG. 2;
fig. 4 is a schematic view schematically showing a disposition position of an interposer in a thickness direction of a piezoelectric layer according to an exemplary embodiment of the present invention;
fig. 5 is a graph comparing Rp values of the structures of fig. 2A, fig. 2F, and fig. 1.
Detailed Description
The technical scheme of the invention is further specifically described below through examples and with reference to the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of embodiments of the present invention with reference to the accompanying drawings is intended to illustrate the general inventive concept and should not be taken as limiting the invention.
Fig. 2 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention. As shown in fig. 2, the bulk acoustic wave resonator includes a bottom electrode, a piezoelectric layer, and a top electrode, which may be covered with a passivation layer. In fig. 2, the letter O denotes the center of the active area of the resonator.
Further, in fig. 2, a region S11 is shown at the non-connecting side of the bottom electrode and the top electrode, an enlarged schematic view of which is shown in fig. 3. In fig. 3, the area indicated by 220 is the active area of the resonator, the area indicated by 200 is the additional structure of the resonator, the area indicated by 210 is the gap structure between the top electrode and the additional structure, d12 is the distance from the additional structure to the acoustic mirror, d11 is the distance from the interposer or the insertion gap into the additional structure, and d14 is the distance from the interposer to extend beyond the additional structure.
FIG. 2A is a schematic partial cross-sectional view taken along line O-C in FIG. 2, according to an exemplary embodiment of the invention. As shown in fig. 2A, the bulk acoustic wave resonator includes a substrate 100 and an acoustic mirror 110 on the upper surface of the substrate or embedded within the substrate, the acoustic mirror being formed as a cavity embedded in the substrate in fig. 2A, but any other acoustic mirror structure such as a bragg reflector is equally suitable. The bulk acoustic wave resonator further includes a bottom electrode 120, a piezoelectric layer 130, a top electrode 140, an additional structure 150, a passivation layer 160, and an interposer 170.
The region shown at 210 is a gap structure between the top electrode 140 and the additional structure 150, and the passivation layer 160 fills the gap 210 and covers at least a portion of the additional structure and/or at least a portion of the top electrode. In the invention, the passivation layer can be arranged or not, and the passivation layer are all within the protection scope of the invention.
The bottom electrode 120 is deposited on the upper surface of the acoustic mirror and covers the acoustic mirror. The bottom electrode 120 may be beveled at its edge and located outside the acoustic mirror, or may be stepped, vertical, or other similar structures.
The region where the acoustic mirror 110, bottom electrode 120, piezoelectric layer 130, top electrode 140 overlap is the active region 220 of the resonator. The top electrode is located within the acoustic mirror and the additional structure is spaced from the edge of the acoustic mirror by a distance d12, d12 ranging from 0-10um. The end of the bottom electrode is at a distance d13 from the acoustic mirror, d13 ranging from 0-10um. The interposer 170 has a first end (inner end, in the present invention, the side closest to the center of the active area in the radial or lateral direction for all the components) and a second end (outer end, in the present invention, the side farther from the center of the active area in the radial or lateral direction for all the components), and the second end of the interposer 170 may be aligned with or extend beyond the outer end edge of the additional structure by a distance d14, d14 ranging from 0-20um. The first end of the interposer 170 is spaced from the outer edge of the additional structure by a distance d11, d11 ranging from 0 to 10um, the interposer height h1, and h1 ranging from 20A to 5000A.
It is specifically noted that, in the present invention, for a numerical range, not only the end value of the range but also the mean or midpoint value of the numerical range may be given.
In this embodiment, the material of the interposer 170 is a medium (e.g., siO2, si3N4, ALN, doped AlN with a different doping concentration than the piezoelectric layer, etc.) or air.
It should be noted that, in the present invention, the insertion layer may be annular or not annular, which is within the scope of the present invention. It should also be noted that in the embodiment of the present invention shown in fig. 2A, the interposer 170 is embodied to include an interposer structure disposed below the additional structure 150 with an overlap portion with the additional structure 150 in a top view.
In the embodiment shown in fig. 2A, the air insert layer provided in the piezoelectric layer, as seen locally, has an acoustic impedance close to 0, and thus a low acoustic impedance boundary may be formed at the edge of the bump structure (high acoustic impedance), thereby enhancing the reflection of sound waves at this interface. On the other hand, in the whole process of propagating the transverse sound wave from the central effective area to the edge direction of the resonator, the transverse sound wave sequentially passes through the slit area without the top electrode (low acoustic impedance area), only the area with the additional structure (high acoustic impedance area) exists, the overlapping area of the air insertion layer and the additional structure (low acoustic impedance area), and the transverse acoustic Bragg reflection layer can be formed by reasonably designing the widths of the areas through impedance transformation, so that the reflection effect on the transverse wave is effectively improved, and finally, the electrical performance is improved.
Fig. 4 is a schematic view schematically showing a position of placement of an interposer in a thickness direction of a piezoelectric layer according to an exemplary embodiment of the present invention. In FIG. 4, the piezoelectric layer is divided into 3 parts equally by C-C and D-D in the thickness direction of the resonator, E-E is the center horizontal line of the insertion protrusion, and E-E is required to be located in the middle of the contour lines shown by C-C and D-D. As shown in fig. 2A, the arrangement of the interposer 170 may also meet the requirements of fig. 4.
Fig. 2E is a schematic partial cross-sectional view taken along line O-C in fig. 2 according to yet another exemplary embodiment of the invention. Fig. 2E is similar to the structure of fig. 2A, except that in fig. 2E, a planarization layer 180 is added to the bottom electrode 120. The flat layer 180 can avoid the problems of film breakage, poor growth quality of the piezoelectric layer, and the like caused by the factors of rough and abrupt edges of the bottom electrode, and is beneficial to improving the electrical performance and stability of the resonator. Accordingly, as shown in fig. 2E, the interposer 170 is a flat portion.
In the case where the flat layer 180 is not provided, for example, as shown in fig. 2A, the insertion layer 170 may include a stepped portion.
Based on the embodiment shown in fig. 2A and 2E, the present invention proposes the following specific technical solutions:
the resonator includes an insertion layer arranged along an edge of the effective region, the insertion layer including a first insertion portion provided below the additional structure in a thickness direction of the resonator, and the first insertion portion overlaps the additional structure in a plan view of the resonator.
As shown in fig. 2A, the first insertion portion may be integrally provided in the piezoelectric layer. Further, in a top view of the resonator, an outer end of the first insertion portion extends to an outside of an outer end of the additional structure in a region corresponding to the additional structure (see, for example, a region d14 in fig. 2A). Still further, in a top view of the resonator, an outer end of the first insertion portion extends to an outside of an outer end of the bottom electrode in a region corresponding to the additional structure (see, for example, a region d14 in fig. 2A). In a further embodiment, in a top view of the resonator, the distance between the outer end of the first insertion part and the outer end of the additional structure in the radial direction is in the range of 0-20 μm in a region corresponding to the additional structure.
The first insert may be a planar layer (see, e.g., fig. 2E).
The first insert may be a step layer and the portion overlapping the additional structure in a top view of the resonator is a flat portion (see e.g. fig. 2A).
At least a part of the first insertion portion is provided at an intermediate position of a corresponding portion of the piezoelectric layer in the thickness direction of the piezoelectric layer (see, for example, fig. 2A and 2E).
Furthermore, in a further embodiment of the invention, see for example fig. 2A, 2C, 2D, 2E, 2F, 2G, etc., in a top view of the resonator, the inner end of the first insert is outside the inner end of the additional structure in a region corresponding to the additional structure. Still further, in an exemplary embodiment, in a top view of the resonator, a distance in a radial direction between an inner end of the first insertion portion and an outer end of the additional structure is in a range of 1-10 μm in a region corresponding to the additional structure.
In the present invention, the thickness of the insertion layer may be in the range of 50A to 5000A.
In the present invention, the dielectric material forming the insertion layer may be at least one of the following materials and combinations thereof: silicon dioxide (SiO) 2 ) Silicon nitride (Si) 3 N 4 ) Silicon carbide (SiC), aluminum nitride (AlN), aluminum oxide (Al) 2 O 3 ) Porous silicon, fluorinated amorphous carbon, fluoropolymers, parylene, polyarylether, hydrogen silsesquioxane, crosslinked polyphenyl polymers, bisbenzocyclobutene, fluorinated silica, carbon doped oxides, and diamond.
Fig. 2C is a schematic partial cross-sectional view taken along line O-C in fig. 2 according to another exemplary embodiment of the invention. Fig. 2C is similar to fig. 2A, except that the piezoelectric layer outside the active area may be etched away along the edges of the active area. Thus, in the embodiment of FIG. 2C, the interposer may not be provided as in FIG. 4.
Fig. 2D is a schematic partial cross-sectional view taken along line O-C in fig. 2 according to still another exemplary embodiment of the invention. It is believed that continuing to etch the piezoelectric layer to the interposer layer on the basis of fig. 2C results in the structure of fig. 2D.
Based on the embodiment of fig. 2D, the present invention specifically proposes the following technical scheme: in one cross-sectional view parallel to the thickness direction of the resonator, the outer end of the portion of the piezoelectric layer below the first insertion portion is located outside the outer end of the portion of the piezoelectric layer above the first insertion portion in the radial direction. Further, in a cross-sectional view parallel to the thickness direction of the resonator, the outer end of the additional structure is aligned with the outer end of the portion of the piezoelectric layer above the first insertion portion.
Although not shown, the interposer may be a ring-shaped interposer. In other words, the interposer further comprises a second interposer forming a ring shape together with the first interposer, at least a portion of the second interposer being located within an effective region in a top view of the resonator. Fig. 2B is a schematic partial cross-sectional view taken along line O-I in fig. 2, illustrating the location of a second insert in fig. 2B, according to an exemplary embodiment of the present invention. As shown in fig. 2B, where the top electrode is electrically connected, the top electrode appears as a continuous structure, but it appears as a bump structure near the edge of the active area, the bump structure first end being spaced from the active area edge by a distance d15. The annular insert 170 (in this case, the second insert) has a first end that is spaced a distance d11 from the edge of the active area and a second end that extends a length d16 from the active area. Thus, in the embodiment of fig. 2B, the portion of the top electrode connected to the corresponding electrode electrical connection portion is provided with a protruding structure, and at least a portion of the second insertion portion overlaps the protruding structure in a top view of the resonator. Further, the distance between the inner end of the second insertion portion and the edge of the effective area in the radial direction is in the range of 0-10 μm; and/or the distance of the outer end of the second insertion portion from the edge of the effective area in the radial direction is in the range of 0-20 μm.
On the connection side of the top electrode and the bottom electrode, the piezoelectric layer has poor quality due to the rough edge of the bottom electrode, the insertion structure 170 can make the resonance excitation caused by the piezoelectric layer with poor quality contribute less to the whole circuit, and the resonance excitation can be improved to a certain extentAntistatic discharge capability.
In the above embodiment, the insertion layer (first insertion portion) is provided in the piezoelectric layer, but the present invention is not limited thereto. Fig. 2F is a schematic partial cross-sectional view taken along line O-C in fig. 2 according to yet another exemplary embodiment of the invention. As shown in fig. 2F, an interposer (first interposer) is disposed between the top surface of the piezoelectric layer and the additional structure.
Fig. 2G is a schematic partial cross-sectional view taken along line O-C in fig. 2 according to yet another exemplary embodiment of the invention. The embodiment shown in fig. 2C is similar to that of fig. 2A, except that the piezoelectric layer is composed of two different piezoelectric materials, or of piezoelectric materials having different doping concentrations. In this embodiment, the first piezoelectric layer 131 is pure ALN, and the second piezoelectric layer 130 is doped ALN. Based on the embodiment shown in fig. 2G, the present invention proposes the following specific scheme: the interposer layer is disposed between a first piezoelectric layer portion and a second piezoelectric layer portion, the first piezoelectric layer portion and the second piezoelectric layer portion constituting the piezoelectric layer, the material constituting the first piezoelectric layer portion being different from the material constituting the second piezoelectric layer portion.
FIG. 2I is a schematic partial cross-sectional view taken along line O-C in FIG. 2, according to yet another exemplary embodiment of the invention. The embodiment shown in fig. 2I is similar to that of fig. 2A, except that the edges of the active area are free of raised structures and are flat structures.
The following exemplary brief description of the materials of the components of the bulk acoustic wave resonator according to the present invention.
In the present invention, the passivation layer is a dielectric material, and the insertion layer may be a dielectric material other than air. The dielectric material may be selected from but is not limited to: silicon dioxide (SiO) 2 ) Silicon nitride (Si 3 N 4 ) Silicon carbide (SiC), aluminum nitride (AlN), aluminum oxide (Al 2 O 3 ) Porous silicon, fluorinated amorphous carbon, fluoropolymers, parylene, polyarylether, hydrogen silsesquioxane, crosslinked polyphenyl polymer, benzocyclobutene, fluorinated silica, carbon doped oxide, and diamond, or combinations thereof.
In the present invention, the piezoelectric layer material may be aluminum nitride (AlN), doped aluminum nitride (doped ALN) zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO 3), quartz (Quartz), potassium niobate (KNbO 3) or lithium tantalate (LiTaO) 3 ) And the like, wherein the doped ALN contains at least one rare earth element such as scandium (Sc), yttrium (Y), magnesium (Mg), titanium (Ti), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), and the like.
In the present invention, the base material includes, but is not limited to: monocrystalline silicon (Si), gallium arsenide (GaAs), sapphire, quartz, etc.
Fig. 5 is a graph comparing Rp values of the structures of fig. 2A, fig. 2F, and fig. 1. As shown in fig. 5, the interposer is formed by air, and has a height h1 of 1000A. As the effective insertion length d11 of the insertion layer 170 increases from 0.25um to 5.75um, the Rp value of the resonator exhibits a periodic oscillating change. When the effective length d11 of the interposer 170 increases from 1um to 4.25um, the parallel resistance (Rp) of both structures with the interposer is significantly higher than that of the conventional composite structure. When d11 is 2um, the structure shown in fig. 2F has a maximum Rp value of 5300 ohms, 65.6% and 26.2% higher than those of fig. 2A and 1, respectively. The structure shown in fig. 2A has a maximum Rp value of 5400 ohms at 3.75um, 22.9% and 47.5% higher than the structures shown in fig. 2F and 1, respectively. The structure shown in FIG. 2A has a global maximum Rp of 6000 ohms when d11 is 5.25 um.
Based on the above embodiments and the drawings, the present invention proposes the following technical solutions:
1. a bulk acoustic wave resonator comprising:
a substrate;
an acoustic mirror;
a bottom electrode;
a top electrode;
the piezoelectric layer, the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode are overlapped in the thickness direction of the substrate, and the area is an effective area of the resonator;
an additional structure arranged in the same layer as the top electrode, the additional structure having a gap from the top electrode in a radial direction separating the two; and
an insertion layer disposed along an edge of the effective region, the insertion layer including a first insertion portion disposed below the additional structure in a thickness direction of the resonator, and the first insertion portion overlapping the additional structure in a plan view of the resonator, the first insertion portion being formed of air or a dielectric material.
2. A filter comprises the resonator.
3. An electronic device comprising a resonator as described above, or a filter as described above. It should be noted that, the electronic devices herein include, but are not limited to, intermediate products such as a radio frequency front end, a filtering and amplifying module, and end products such as a mobile phone, a WIFI, and an unmanned aerial vehicle.
Although embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.
Claims (20)
1. A bulk acoustic wave resonator comprising:
a substrate;
an acoustic mirror;
a bottom electrode;
a top electrode;
the piezoelectric layer, the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode are overlapped in the thickness direction of the substrate, and the area is an effective area of the resonator;
an additional structure arranged in the same layer as the top electrode, the additional structure having a gap from the top electrode in a radial direction separating the two; and
an insertion layer disposed along an edge of the effective region, the insertion layer including a first insertion portion disposed below the additional structure in a thickness direction of the resonator, and overlapping the additional structure in a top view of the resonator, the first insertion portion being formed of air or a dielectric material;
in a top view of the resonator, the inner end of the first insertion portion is outside the inner end of the additional structure in a region corresponding to the additional structure.
2. The resonator of claim 1, wherein:
in a top view of the resonator, a distance in a radial direction between an inner end of the first insertion portion and an outer end of the additional structure is in a range of 0-10 μm, further in a range of 1-4.5um, in a region corresponding to the additional structure.
3. The resonator of claim 1, wherein:
the thickness of the insertion layer is in the range of 20A-5000A.
4. The resonator of claim 1, wherein:
the dielectric material is at least one of the following materials and combinations thereof: silicon dioxide (SiO) 2 ) Silicon nitride (Si) 3 N 4 ) Silicon carbide (SiC), aluminum nitride (AlN), aluminum oxide (Al) 2 O 3 ) Porous silicon, fluorinated amorphous carbon, fluoropolymers, parylene, polyarylether, hydrogen silsesquioxane, crosslinked polyphenyl polymers, bisbenzocyclobutene, fluorinated silica, carbon doped oxides, and diamond.
5. The resonator according to any of claims 1-4, wherein:
the first insertion portion is integrally provided in the piezoelectric layer.
6. The resonator of claim 5, wherein:
in a top view of the resonator, an outer end of the first insertion portion extends outside an outer end of the additional structure in a region corresponding to the additional structure.
7. The resonator of claim 6, wherein:
in a top view of the resonator, an outer end of the first insertion portion extends outside an outer end of the bottom electrode in a region corresponding to the additional structure.
8. The resonator of claim 7, wherein:
in a top view of the resonator, a distance between an outer end of the first insertion portion and an outer end of the additional structure in a radial direction is in a range of 0-20 μm in a region corresponding to the additional structure.
9. The resonator of claim 5, wherein:
the first insert is a planar layer.
10. The resonator of claim 5, wherein:
the first insertion portion is a step layer, and a portion overlapping with the additional structure in a plan view of the resonator is a flat portion.
11. The resonator of claim 5, wherein:
at least a part of the first insertion portion is provided at an intermediate position of a corresponding portion of the piezoelectric layer in a thickness direction of the piezoelectric layer.
12. The resonator according to any of claims 1-4, wherein:
in one cross-sectional view parallel to the thickness direction of the resonator, the outer end of the portion of the piezoelectric layer below the first insertion portion is located outside the outer end of the portion of the piezoelectric layer above the first insertion portion in the radial direction.
13. The resonator of claim 12, wherein:
in a cross-sectional view parallel to the thickness direction of the resonator, the outer end of the additional structure is aligned with the outer end of the portion of the piezoelectric layer above the first insertion portion.
14. The resonator of claim 5, wherein:
the interposer is a ring-shaped interposer, and the interposer further includes a second interposer that forms a ring with the first interposer, at least a portion of the second interposer being located within an active region in a top view of the resonator.
15. The resonator of claim 14, wherein:
the portion of the top electrode connected to the corresponding electrode electrical connection portion is provided with a protruding structure, and at least a portion of the second insertion portion overlaps the protruding structure in a top view of the resonator.
16. The resonator of claim 15, wherein:
the distance between the inner end of the second insertion part and the edge of the effective area in the radial direction is in the range of 0-10 μm; and/or the distance of the outer end of the second insertion portion from the edge of the effective area in the radial direction is in the range of 0-20 μm.
17. The resonator according to any of claims 1-4, wherein:
the first insertion portion is disposed between the additional structure and a top surface of the piezoelectric layer.
18. The resonator of claim 1, wherein:
the interposer layer is disposed between a first piezoelectric layer portion and a second piezoelectric layer portion, the first piezoelectric layer portion and the second piezoelectric layer portion constituting the piezoelectric layer, the material constituting the first piezoelectric layer portion being different from the material constituting the second piezoelectric layer portion.
19. A filter, comprising:
the bulk acoustic wave resonator according to any of claims 1-18.
20. An electronic device comprising a bulk acoustic wave resonator according to any of claims 1-18, or a filter according to claim 19.
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