CN111009466A - Method for manufacturing Schottky diode circuit with inverted material structure and heterogeneous substrate - Google Patents

Method for manufacturing Schottky diode circuit with inverted material structure and heterogeneous substrate Download PDF

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Publication number
CN111009466A
CN111009466A CN201911111024.3A CN201911111024A CN111009466A CN 111009466 A CN111009466 A CN 111009466A CN 201911111024 A CN201911111024 A CN 201911111024A CN 111009466 A CN111009466 A CN 111009466A
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substrate
manufacturing
schottky diode
heterogeneous substrate
doped layer
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牛斌
范道雨
戴家赟
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CETC 55 Research Institute
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66143—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Manufacturing & Machinery (AREA)
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Abstract

The invention discloses a method for manufacturing a Schottky diode circuit with an inverted material structure and a heterogeneous substrate, which comprises the steps of epitaxially growing an etching stop layer, an n-doping layer and an n + doping layer on an original substrate material, forming a front ohmic contact through photoetching, metallization and annealing, then bonding the front of the material with the heterogeneous substrate, completely removing a raw material substrate and the etching stop layer, turning over a wafer, manufacturing vertical interconnection metal for connecting the ohmic contact with the surface of the n-doping layer by taking the heterogeneous substrate as the bottom of a device, manufacturing structures such as a Schottky contact and an air bridge on the surface of the n-doping layer, finishing manufacturing the Schottky diode, finally manufacturing structures such as a microwave transmission line and an air bridge on the heterogeneous substrate, thinning the heterogeneous substrate, and finishing manufacturing the Schottky diode circuit with the inverted material structure and the heterogeneous substrate. The Schottky diode is of a quasi-vertical structure, so that series resistance is reduced conveniently, and the cut-off frequency of the device is improved.

Description

Method for manufacturing Schottky diode circuit with inverted material structure and heterogeneous substrate
Technical Field
The invention relates to a manufacturing method of a Schottky diode, and belongs to the field of semiconductor devices.
Background
Terahertz (THz) science and technology is a new interdisciplinary subject and research hotspot which develops rapidly in the last two decades, and relates to the multigate science of electromagnetism, optoelectronics, optics, semiconductor physics, material science, biology, medicine and the like. The terahertz frequency band covers the frequency range of 0.3 THz-3 THz of the electromagnetic spectrum, and is a wide-frequency-band electromagnetic radiation area with abundant physical connotations. In almost all terahertz technology application systems, the terahertz receiving front end is the most core technology of the system, and completes the frequency conversion of terahertz signals. The terahertz subharmonic mixer is a key component of a terahertz receiving front end. At present, among the only several types of mixers capable of working in the terahertz frequency band, only the terahertz subharmonic mixer based on the planar schottky diode can work at room temperature, and a harsh low-temperature environment such as liquid helium is not required to be provided.
In order to improve the frequency characteristics of the diode, the device series resistance needs to be reduced. The traditional mesa Schottky diode series resistor mainly comprises a diffusion resistor below a Schottky junction and a transverse transmission resistor of an n + doped region. Under terahertz frequency, the skin effect causes that transverse transmission current is limited in an n + material layer of about 1 micron, and transverse transmission resistance cannot be reduced by thickening the thickness of the n + material layer, so that the traditional Schottky diode device structure limits further reduction of series resistance, and further improvement of cut-off frequency of the device is limited.
Disclosure of Invention
The invention provides a method for manufacturing a Schottky diode circuit with an inverted material structure and a heterogeneous substrate, which aims to solve the problem that the series resistance of the traditional Schottky diode is difficult to further reduce. Meanwhile, through heterogeneous substrate bonding, a substrate material with a lower dielectric constant can be selected to design a microstrip line structure, and a solution is provided for realizing a terahertz Schottky diode integrated circuit with higher working frequency.
The technical solution of the invention is as follows:
a manufacturing method of a Schottky diode circuit with an inverted material structure and a heterogeneous substrate comprises the following steps:
step 1, epitaxially growing an etching stop layer, an n-doped layer and an n + doped layer on an original substrate material in sequence;
step 2, photoetching, metalizing and annealing are carried out on the surface of the n + doped layer to form front ohmic contact;
step 3, bonding the front surface of the material with another heterogeneous substrate through an organic bonding material;
step 4, completely removing the original substrate material and the corrosion stop layer through thinning or chemical corrosion;
step 5, turning over the wafer, and manufacturing vertical interconnection metal for connecting the ohmic contact and the surface of the n-doped layer by taking the heterogeneous substrate as the bottom of the device;
step 6, manufacturing a structure at least comprising a Schottky contact, an air bridge, an electrode plate or/and an isolation table board on the surface of the n-doped layer, and finishing the manufacture of the Schottky diode;
and 7, manufacturing a structure at least comprising a microwave transmission line or/and an air bridge on the heterogeneous substrate, thinning the heterogeneous substrate, and finishing the manufacture of the Schottky diode circuit with the inverted material structure type heterogeneous substrate.
Further, in the method for manufacturing the schottky diode circuit with the material structure inverted and the foreign substrate, in the step 1, the original substrate material at least comprises GaAs or InP.
Further, in the method for manufacturing the schottky diode circuit with the material structure inverted and heterogeneous substrate, in the step 1, the doping concentration of the n-doping layer is 1e17cm-3～1e18cm-3(ii) a The doping concentration of the n + doped layer was 5e18cm-3～1e20cm-3。
Further, in the method for manufacturing the schottky diode circuit with the material structure inverted and the foreign substrate, in the step 3, the organic bonding material at least comprises BCB or polyimide.
Furthermore, in the method for manufacturing the schottky diode circuit with the material structure inverted and the foreign substrate, in the step 3, the front surface of the material is bonded with the other foreign substrate in a spin coating manner, and bonding equipment is adopted to realize bonding.
Further, in the method for manufacturing the schottky diode circuit with the material structure inverted type foreign substrate, in the step 3, the foreign substrate is any one of quartz, Si or SiC.
Further, in the method for manufacturing the schottky diode circuit with the material structure inverted and the foreign substrate, in the step 6, the schottky contact is manufactured right above the ohmic contact metal.
In the invention, the epitaxial growth sequence of the n + doped layer and the n-doped layer is opposite to that of the conventional Schottky diode, and the n-doped layer is grown first and then the n + doped layer is grown; the inverted material structure combines raw material substrate removal, foreign substrate bonding and the like to realize that the current between the Schottky contact and the ohmic contact is in a vertical flow direction instead of the traditional plane flow direction. A microwave signal transmission line connected with the Schottky diode can be manufactured on the heterogeneous substrate, so that the Schottky diode integrated circuit is manufactured; the inverted material design is convenient for directly placing cathode ohmic contact right above an anode contact point, and provides a technical approach for realizing a vertical current device structure. The vertical Schottky current breaks through the limitation of a transverse current structure of the traditional Schottky diode, provides an optimized space for reducing the series resistance of the Schottky diode, and provides a process basis for realizing a terahertz Schottky diode integrated circuit with a heterogeneous substrate with a lower dielectric constant.
Drawings
Fig. 1 is a schematic structural diagram of an epitaxial material of an inverted schottky diode in embodiment 1;
FIG. 2 is a schematic cross-sectional view of a device of example 1 in which surface ohmic contact is accomplished;
FIG. 3 is a schematic cross-sectional view of a device for bonding foreign substrates in example 1;
FIG. 4 is a schematic cross-sectional view of a device of example 1 with the original epitaxial material substrate removed;
FIG. 5 is a schematic cross-sectional view of a device with ohmic contact vertical metal interconnection completed after front and back sides are turned over in example 1;
FIG. 6 is a schematic cross-sectional view of the device of example 1 with Schottky contact, anode air bridge, electrode plate and mesa isolation completed;
fig. 7 is a plan view of the microwave transmission line and its interconnection to the air bridge of the schottky diode in embodiment 1 completed on the foreign substrate;
in the above fig. 1-7, 1 is an original substrate material, 2 is an etch stop layer, 3 is an n-doped layer, 4 is an n + doped layer, 5 is an ohmic contact, 6 is an organic bonding material layer, 7 is a heterogeneous substrate, 8 is a vertical interconnection metal, 91 is an anode electrode plate, 92 is a cathode electrode plate, 93 is a schottky contact, 94 is a first air bridge, 95 is a microstrip line, and 96 is a second air bridge.
The specific implementation mode is as follows:
the invention provides a method for manufacturing a Schottky diode circuit with an inverted material structure and a heterogeneous substrate, which comprises the following steps:
step 1, epitaxially growing an etching stop layer, an n-doped layer and an n + doped layer on an original substrate material in sequence;
step 2, photoetching, metalizing and annealing are carried out on the surface of the n + doped layer to form front ohmic contact;
step 3, bonding the front surface of the material with another heterogeneous substrate through an organic bonding material;
step 4, completely removing the original substrate material and the corrosion stop layer through thinning or chemical corrosion;
step 5, turning over the wafer, and manufacturing vertical interconnection metal for connecting the ohmic contact and the surface of the n-doped layer by taking the heterogeneous substrate as the bottom of the device;
step 6, manufacturing a structure at least comprising a Schottky contact, an air bridge, an electrode plate or/and an isolation table board on the surface of the n-doped layer, and finishing the manufacture of the Schottky diode;
and 7, manufacturing a structure at least comprising a microwave transmission line or/and an air bridge on the heterogeneous substrate, thinning the heterogeneous substrate, and finishing the manufacture of the Schottky diode circuit with the inverted material structure type heterogeneous substrate.
The technical scheme of the invention is further described by combining the concrete examples as follows:
example 1
The method of the present invention is further described below with reference to the accompanying drawings.
A manufacturing method of a Schottky diode circuit with an inverted material structure and a heterogeneous substrate comprises the following steps:
step 1, epitaxially growing an etching stop layer 2 and an n-doped layer 3 in sequence on an original substrate material 1 (semi-insulating GaAs substrate) with a doping concentration of 1e17cm-3～1e18cm-3In between, an n + doped layer 4 is epitaxially doped over the n-doped layer 3 with a doping concentration of 5e18cm-3～1e20cm-3As shown in fig. 1;
step 2, photoetching and corroding the surface of the n + doped layer 4 to form a groove, evaporating ohmic contact metal and annealing to form an ohmic contact 5 embedded in the groove, as shown in fig. 2;
step 3, spin-coating an organic bonding material BCB on the metal surfaces of the n + doping layer 4 and the ohmic contact 5, and bonding the metal surfaces with a heterogeneous substrate material through bonding equipment to form an organic bonding material layer 6, wherein the heterogeneous substrate material is a quartz substrate with a lower dielectric constant, as shown in FIG. 3;
step 4, completely removing the original substrate material 1 and the etch stop layer 2 by chemical etching to expose the n-doped layer 3, as shown in fig. 4;
step 5, turning over the wafer, and manufacturing a vertical interconnection metal 8 for connecting the ohmic contact 5 and the surface of the n-doping layer 3 by taking the heterogeneous substrate 7 as the bottom of the device, as shown in fig. 5;
step 6, manufacturing schottky contacts 93, a first air bridge 94, electrode plates (including an anode electrode plate 91 and a cathode electrode plate 92), an isolation mesa and the like on the surface of the n-doped layer 3 to complete the manufacture of the schottky diode, wherein the schottky contacts 93 are manufactured and positioned right above the metal of the ohmic contact 5 to ensure that the current between the schottky contacts 93 and the ohmic contact 5 is in the vertical direction, as shown in fig. 6;
and 7, manufacturing structures (including a second air bridge 96 and a microstrip line 95) such as a microwave transmission line, an air bridge of the microwave transmission line and a diode on the heterogeneous substrate 7, thinning the substrate, and finishing the manufacture of the material structure inverted heterogeneous substrate Schottky diode circuit, as shown in fig. 7.
Example 2
A manufacturing method of a Schottky diode circuit with an inverted material structure and a heterogeneous substrate comprises the following steps:
step 1, epitaxially growing an etching stop layer and an n-doped layer in sequence on an InP substrate as an original substrate material, wherein the doping concentration of the n-doped layer is 1e17cm-3～1e18cm-3In between, an n + doped layer is epitaxially doped over the n-doped layer with a doping concentration of 5e18cm-3～1e20cm-3To (c) to (d);
step 2, photoetching and corroding the surface of the n + doped layer to form a groove, evaporating ohmic contact metal and annealing to form ohmic contact embedded in the groove;
step 3, spin-coating organic bonding material polyimide on the n + doping layer and the ohmic contact metal surface, and bonding with the heterogeneous substrate material through bonding equipment, wherein the heterogeneous substrate material is selected from SiC;
step 4, completely removing the raw material substrate and the corrosion stop layer through chemical corrosion to expose the n-doped layer;
step 5, turning over the wafer, and manufacturing vertical interconnection metal for connecting the ohmic contact and the surface of the n-doped layer by taking the heterogeneous substrate as the bottom of the device;
step 6, manufacturing structures such as a Schottky contact, an air bridge, an electrode plate and an isolation table board on the surface of the n-doped layer to finish manufacturing of the Schottky diode, wherein the Schottky contact is manufactured right above the ohmic contact metal to ensure that the current between the Schottky contact and the ohmic contact is in the vertical direction;
and 7, manufacturing structures such as a microwave transmission line, an air bridge of the microwave transmission line and the diode and the like on the heterogeneous substrate, thinning the substrate, and finishing the manufacture of the Schottky diode circuit with the inverted material structure and the heterogeneous substrate.
In the invention, the epitaxial growth sequence of the n + doped layer and the n-doped layer is opposite to that of the conventional Schottky diode, and the n-doped layer is grown first and then the n + doped layer is grown; the inverted material structure combines raw material substrate removal, foreign substrate bonding and the like to realize that the current between the Schottky contact and the ohmic contact is in a vertical flow direction instead of the traditional plane flow direction.
According to the invention, a microwave signal transmission line connected with the Schottky diode can be manufactured on the heterogeneous substrate, so that the Schottky diode integrated circuit is manufactured; the inverted material design is convenient for directly placing cathode ohmic contact right above an anode contact point, and provides a technical approach for realizing a vertical current device structure. The vertical Schottky current breaks through the limitation of a transverse current structure of the traditional Schottky diode, provides an optimized space for reducing the series resistance of the Schottky diode, and provides a process basis for realizing a terahertz Schottky diode integrated circuit with a heterogeneous substrate with a lower dielectric constant.

Claims (7)

1. A manufacturing method of a Schottky diode circuit with an inverted material structure and a heterogeneous substrate is characterized by comprising the following steps:
step 1, epitaxially growing an etching stop layer, an n-doped layer and an n + doped layer on an original substrate material in sequence;
step 2, photoetching, metalizing and annealing are carried out on the surface of the n + doped layer to form front ohmic contact;
step 3, bonding the front surface of the material with another heterogeneous substrate through an organic bonding material;
step 4, completely removing the original substrate material and the corrosion stop layer through thinning or chemical corrosion;
step 5, turning over the wafer, and manufacturing vertical interconnection metal for connecting the ohmic contact and the surface of the n-doped layer by taking the heterogeneous substrate as the bottom of the device;
step 6, manufacturing a structure at least comprising a Schottky contact, an air bridge, an electrode plate or/and an isolation table board on the surface of the n-doped layer, and finishing the manufacture of the Schottky diode;
and 7, manufacturing a structure at least comprising a microwave transmission line or/and an air bridge on the heterogeneous substrate, thinning the heterogeneous substrate, and finishing the manufacture of the Schottky diode circuit with the inverted material structure type heterogeneous substrate.
2. The method as claimed in claim 1, wherein the raw substrate material in step 1 comprises at least GaAs or InP.
3. The method for manufacturing the Schottky diode circuit with the material structure inverted and foreign substrate as defined in claim 1, wherein the doping concentration of the n-doped layer in the step 1 is 1e17cm-3～1e18cm-3(ii) a The doping concentration of the n + doped layer was 5e18cm-3～1e20cm-3。
4. The method as claimed in claim 1, wherein the organic bonding material in step 3 comprises at least BCB or polyimide.
5. The method for manufacturing the schottky diode circuit with the material structure inverted and the foreign substrate as claimed in claim 1, wherein the bonding of the front surface of the material with the other foreign substrate in the step 3 is realized by spin coating and using a bonding device.
6. The method for manufacturing the Schottky diode circuit with the material structure inverted and the foreign substrate as defined in claim 1, wherein the foreign substrate in the step 3 is any one of quartz, Si or SiC.
7. The method as claimed in claim 1, wherein the step 6 is performed by forming a schottky contact directly on the ohmic contact metal.
CN201911111024.3A 2019-11-14 2019-11-14 Method for manufacturing Schottky diode circuit with inverted material structure and heterogeneous substrate Pending CN111009466A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111900093A (en) * 2020-07-14 2020-11-06 南京中电芯谷高频器件产业技术研究院有限公司 BCB film terahertz circuit and manufacturing method thereof
CN114005884A (en) * 2021-09-30 2022-02-01 中国电子科技集团公司第五十五研究所 GaN Schottky bidirectional variable capacitance diode with MSM structure and manufacturing method thereof

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CN104851864A (en) * 2015-05-27 2015-08-19 中国电子科技集团公司第十三研究所 GaN schottky diode with hanging beam lead structure and manufacturing method thereof
CN104851921A (en) * 2015-05-21 2015-08-19 中国电子科技集团公司第十三研究所 GaN-based Schottky diode of vertical structure, and manufacture method thereof
CN105679838A (en) * 2016-01-11 2016-06-15 西安电子科技大学 AlGaN/GaN heterojunction multi-channel structure based terahertz schottky diode and manufacturing method therefor
CN106683992A (en) * 2016-12-15 2017-05-17 中国电子科技集团公司第五十五研究所 Method of making Schottky diode T-type anode contact air bridge electrode
CN107170680A (en) * 2017-05-23 2017-09-15 中国电子科技集团公司第十三研究所 A kind of GaN base Schottky diode preparation method of quasi- vertical stratification
CN108364950A (en) * 2018-02-11 2018-08-03 中国工程物理研究院电子工程研究所 Epitaxial structure and the method for making integrated frequency changer circuit on GaAs base single tube devices and GaAs substrates

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Publication number Priority date Publication date Assignee Title
CN104851921A (en) * 2015-05-21 2015-08-19 中国电子科技集团公司第十三研究所 GaN-based Schottky diode of vertical structure, and manufacture method thereof
CN104851864A (en) * 2015-05-27 2015-08-19 中国电子科技集团公司第十三研究所 GaN schottky diode with hanging beam lead structure and manufacturing method thereof
CN105679838A (en) * 2016-01-11 2016-06-15 西安电子科技大学 AlGaN/GaN heterojunction multi-channel structure based terahertz schottky diode and manufacturing method therefor
CN106683992A (en) * 2016-12-15 2017-05-17 中国电子科技集团公司第五十五研究所 Method of making Schottky diode T-type anode contact air bridge electrode
CN107170680A (en) * 2017-05-23 2017-09-15 中国电子科技集团公司第十三研究所 A kind of GaN base Schottky diode preparation method of quasi- vertical stratification
CN108364950A (en) * 2018-02-11 2018-08-03 中国工程物理研究院电子工程研究所 Epitaxial structure and the method for making integrated frequency changer circuit on GaAs base single tube devices and GaAs substrates

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111900093A (en) * 2020-07-14 2020-11-06 南京中电芯谷高频器件产业技术研究院有限公司 BCB film terahertz circuit and manufacturing method thereof
CN114005884A (en) * 2021-09-30 2022-02-01 中国电子科技集团公司第五十五研究所 GaN Schottky bidirectional variable capacitance diode with MSM structure and manufacturing method thereof
CN114005884B (en) * 2021-09-30 2024-07-26 中国电子科技集团公司第五十五研究所 GaN Schottky bidirectional varactor with MSM structure and manufacturing method thereof

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Application publication date: 20200414