CN111005009A - Low-stress heat dissipation layer semiconductor substrate and preparation method and application thereof - Google Patents

Low-stress heat dissipation layer semiconductor substrate and preparation method and application thereof Download PDF

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CN111005009A
CN111005009A CN201911397643.3A CN201911397643A CN111005009A CN 111005009 A CN111005009 A CN 111005009A CN 201911397643 A CN201911397643 A CN 201911397643A CN 111005009 A CN111005009 A CN 111005009A
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semiconductor substrate
diamond
layer
buffer layer
carbon buffer
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魏志鹏
郭德双
唐吉龙
王华涛
徐英添
范杰
郝永芹
王新伟
林逢源
王晓华
马晓辉
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Changchun University of Science and Technology
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Changchun University of Science and Technology
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials

Abstract

The invention relates to the technical field of novel substrate materials, and provides a semiconductor substrate with a low-stress heat dissipation layer, and a preparation method and application thereof. The semiconductor substrate of the low-stress heat dissipation layer provided by the invention sequentially comprises a semiconductor substrate layer, a diamond-like carbon buffer layer and a diamond film layer from top to bottom. According to the invention, the diamond-like carbon buffer layer is added between the semiconductor substrate layer and the diamond film layer, the diamond-like carbon buffer layer and the diamond film layer form the low-stress heat dissipation layer, the stress problem caused by unmatched thermal expansion coefficients between the semiconductor substrate and the diamond film layer is solved by utilizing the buffer action of the diamond-like carbon buffer layer, and the stress between the diamond-like carbon buffer layer and the semiconductor substrate is effectively reduced; and the diamond has poor conductivity, and the problem of high difficulty in preparing the electrode caused by poor conductivity of the diamond is effectively solved by adding the diamond-like carbon buffer layer with the conductivity.

Description

Low-stress heat dissipation layer semiconductor substrate and preparation method and application thereof
Technical Field
The invention relates to the technical field of novel substrate materials, in particular to a semiconductor substrate with a low-stress heat dissipation layer and a preparation method and application thereof.
Background
Optoelectronic devices (photoelectronic devices) are various functional devices made using the electro-photon conversion effect. The optoelectronic device is a key and core component of the optoelectronic technology, and the application range of the optoelectronic device is wide, including: optical fiber communication, optical fiber sensing, semiconductor optoelectronic instrument devices, semiconductor laser rangefinders, light emitting tube displays and lighting, optical disk storage, and the like.
In the manufacturing process of the LED chip of the optoelectronic device, the substrate plays an important role. In order to prepare high-quality optoelectronic single crystal materials, optoelectronic device structures are generally prepared on thicker semiconductor substrates, but the thicker substrates reduce the heat dissipation performance of the optoelectronic devices. Therefore, how to effectively dissipate the heat generated by the optoelectronic device is an urgent problem to be solved.
At present, the heat dissipation mode of the photoelectronic device mainly comprises heat sink and water cooling, and the materials used for manufacturing the heat sink are oxygen-free copper, beryllium oxide, aluminum nitride, quartz, silver and diamond generally. The diamond is a super-wide forbidden band semiconductor material, and the forbidden band width and the carrier mobility are high; meanwhile, the diamond has extremely low intrinsic carrier concentration at room temperature; and the diamond also has the highest thermal conductivity in semiconductor materials, so that the diamond has a wide application prospect in optoelectronic devices. However, direct deposition of diamond on a semiconductor substrate is prone to stress problems due to mismatch in the coefficients of thermal expansion of the diamond and the semiconductor substrate.
Disclosure of Invention
In order to solve the problems, the invention provides a low-stress heat dissipation layer semiconductor substrate and a preparation method and application thereof. The diamond-like carbon buffer layer and the diamond film layer in the semiconductor substrate of the low-stress heat dissipation layer form the low-stress heat dissipation layer, and the diamond-like carbon buffer layer effectively reduces the stress of the semiconductor substrate.
The invention provides a low-stress heat dissipation layer semiconductor substrate which sequentially comprises a semiconductor substrate layer, a diamond-like carbon buffer layer and a diamond film layer from top to bottom;
the thickness of the semiconductor substrate layer is 50-60 mu m; the thickness of the diamond-like carbon buffer layer is 4-7 mu m; the thickness of the diamond film layer is 28-32 mu m.
Preferably, the material of the semiconductor substrate layer comprises GaSb, GaAs, InP, Si or InAs.
The invention also provides a preparation method of the semiconductor substrate with the low-stress heat dissipation layer, which comprises the following steps:
(1) depositing a diamond-like carbon buffer layer on the back of the semiconductor substrate by adopting a radio frequency plasma enhanced chemical vapor deposition method;
(2) depositing a diamond film layer on the surface of the diamond-like carbon buffer layer by adopting a microwave plasma chemical vapor deposition method;
(3) and sequentially thinning and polishing the front surface of the semiconductor substrate layer to obtain the low-stress heat dissipation layer semiconductor substrate.
Preferably, the carbon source of the radio frequency plasma enhanced chemical vapor deposition method is C2H2，C2H2The flow rate of the deposition solution is 280 to 320sccm, the power is 180 to 220W, and the deposition time is 20 to 90 min.
Preferably, the hydrogen flow of the microwave plasma chemical vapor deposition method is 180-220 sccm, the methane flow is 3-35 sccm, the microwave power is 3000-4000W, the air pressure is 17-19 KPa, the substrate temperature is 1150-1200 ℃, and the deposition time is 5-7 h.
Preferably, the step (1) is performed by performing a cleaning process on the back surface of the semiconductor substrate before depositing the diamond-like carbon buffer layer, the cleaning process comprising the steps of: and placing the semiconductor substrate in argon plasma under 380-420V radio frequency self-bias, wherein the flow rate of the argon plasma is 280-320 sccm, and the placing time of the semiconductor substrate in the argon plasma is 8-12 min.
Preferably, the step (2) is to perform H treatment on the surface of the diamond-like carbon buffer layer before depositing the diamond film layer2/O2Pretreating with microwave plasma; said H2/O2The pressure of the microwave plasma pretreatment is 65-75 Torr, and the H2/O2The power of microwave plasma pretreatment is 2200-2400W, and H is2/O2The microwave plasma pretreatment time is 100-140 min.
Preferably, in the step (3), the thickness of the thinned semiconductor substrate layer is 62-67 μm, and the thickness of the polished semiconductor substrate layer is 50-60 μm.
The invention also provides application of the low-stress heat dissipation layer semiconductor substrate in the technical scheme or the low-stress heat dissipation layer semiconductor substrate prepared by the method in the technical scheme in an optoelectronic device.
The invention provides a low-stress heat dissipation layer semiconductor substrate which sequentially comprises a semiconductor substrate layer, a diamond-like carbon buffer layer and a diamond film layer from top to bottom. According to the invention, the diamond-like carbon buffer layer is added between the semiconductor substrate layer and the diamond film layer, the diamond-like carbon buffer layer and the diamond film layer form the low-stress heat dissipation layer, the stress problem caused by unmatched thermal expansion coefficients between the semiconductor substrate layer and the diamond film layer is solved by utilizing the buffer action of the diamond-like carbon buffer layer, the composite structure formed by the diamond-like carbon buffer layer and the diamond film layer has low stress, and the diamond-like carbon buffer layer effectively reduces the stress of the semiconductor substrate; and the diamond has poor conductivity, and the problem of high difficulty in preparing the electrode caused by poor conductivity of the diamond is effectively solved by adding the diamond-like carbon buffer layer with the conductivity.
Drawings
FIG. 1 is a schematic structural diagram of a semiconductor substrate with a low stress heat dissipation layer according to the present invention.
Detailed Description
The invention provides a low-stress heat dissipation layer semiconductor substrate which sequentially comprises a semiconductor substrate layer, a diamond-like carbon buffer layer and a diamond film layer from top to bottom.
The semiconductor substrate structure of the low-stress heat dissipation layer provided by the invention is shown in figure 1, and the semiconductor substrate of the low-stress heat dissipation layer sequentially comprises a semiconductor substrate layer, a diamond-like carbon buffer layer and a diamond film layer from top to bottom. In the invention, the material of the semiconductor substrate layer preferably comprises GaSb, GaAs, InP, Si or InAs; the thickness of the semiconductor substrate layer is 50-60 μm, preferably 52-58 μm. In the invention, the thickness of the diamond-like carbon buffer layer is 4-7 μm, preferably 5-6 μm; the thickness of the diamond film layer is 28-32 μm, preferably 30 μm.
According to the invention, the diamond-like carbon buffer layer is added between the semiconductor substrate layer and the diamond film layer, the diamond-like carbon buffer layer and the diamond film layer form the low-stress heat dissipation layer, the stress problem caused by unmatched thermal expansion coefficients between the semiconductor substrate and the diamond film layer is solved by utilizing the buffer action of the diamond-like carbon buffer layer, and the stress of the semiconductor substrate is effectively reduced by the diamond-like carbon buffer layer; and the conductivity of the diamond is poor, and the problem of poor electrode performance caused by poor conductivity of the diamond is effectively solved by adding the diamond-like carbon buffer layer with the conductivity characteristic.
The invention provides a preparation method of the semiconductor substrate with the low-stress heat dissipation layer, which comprises the following steps:
(1) depositing a diamond-like carbon buffer layer on the back of the semiconductor substrate by adopting a radio frequency plasma enhanced chemical vapor deposition method;
(2) depositing a diamond film layer on the surface of the diamond-like carbon buffer layer by adopting a microwave plasma chemical vapor deposition method;
(3) and sequentially thinning and polishing the front surface of the semiconductor substrate layer to obtain the low-stress heat dissipation layer semiconductor substrate.
The invention adopts a radio frequency plasma enhanced chemical vapor deposition method to deposit a diamond-like carbon buffer layer on the back of a semiconductor substrate.
The present invention preferably performs a cleaning process on the back side of the semiconductor substrate prior to depositing the diamond-like carbon buffer layer, the cleaning process preferably comprising the steps of: and placing the semiconductor substrate in argon plasma under 380-420V radio frequency self-bias, wherein the flow rate of the argon plasma is preferably 280-320 sccm, more preferably 300sccm, and the placing time of the semiconductor substrate in the argon plasma is preferably 8-12 min, more preferably 10 min. In the cleaning process of the present invention, the RF self-bias voltage is preferably 400V. The present invention preferably removes impurities on a semiconductor substrate by subjecting the semiconductor substrate to a plasma cleaning process.
After the semiconductor cleaning treatment is finished, the invention adopts a radio frequency plasma enhanced chemical vapor deposition method to deposit the diamond-like carbon buffer layer on the back surface of the semiconductor substrate. In the invention, the carbon source of the radio frequency plasma enhanced chemical vapor deposition method is preferably C2H2Said C is2H2The preferred flow rate is 280-320 sccm, more preferably 300sccm, and the RF power is appliedThe rate is preferably 180-220W constant radio frequency power, more preferably 200W constant radio frequency power, and the deposition time is preferably 20-90 min, more preferably 30-80 min, and more preferably 40-70 min. The invention preferably controls the relevant parameters of the radio frequency plasma enhanced chemical vapor deposition within the range, and is beneficial to depositing on the back of the semiconductor substrate to obtain the diamond-like carbon buffer layer with better quality.
After the diamond-like carbon buffer layer is deposited, the invention adopts a microwave plasma chemical vapor deposition method to deposit a diamond film layer on the surface of the diamond-like carbon buffer layer.
The invention preferably carries out H treatment on the surface of the diamond-like carbon buffer layer before depositing the diamond film layer2/O2Pretreating with microwave plasma; said H2/O2The pressure of the microwave plasma pretreatment is preferably 65 to 75Torr, more preferably 70Torr, and the H2/O2The power of the microwave plasma pretreatment is preferably 2200-2400W, more preferably 2300W, and H2/O2The time of the microwave plasma pretreatment is preferably 100-140 min, and more preferably 120 min. The invention preferably carries out pretreatment on the surface of the diamond-like carbon buffer layer, thereby being beneficial to etching off surface defects caused by dislocation and polishing and improving the interface bonding performance of the diamond-like carbon buffer layer and the diamond film layer.
After the pretreatment is finished, the invention adopts a microwave plasma chemical vapor deposition method to deposit a diamond film layer on the surface of the diamond-like carbon buffer layer. In the invention, the hydrogen flow of the microwave plasma chemical vapor deposition method is preferably 180-220 sccm, more preferably 200 sccm; the flow rate of methane is preferably 3-35 sccm, more preferably 4-30 sccm, and even more preferably 5-25 sccm; the microwave power is preferably 3000-4000W, more preferably 3200-3800W, and more preferably 3500W; the air pressure is preferably 17-19 KPa, and more preferably 18 KPa; the substrate temperature is preferably 1150-1200 ℃, and more preferably 1180 ℃; the deposition time is preferably 5-7 h, and more preferably 6 h. The invention preferably controls the relevant parameters of microwave plasma chemical vapor deposition in the range, which is beneficial to depositing on the surface of the diamond-like carbon buffer layer to obtain a diamond film layer with better quality.
After the diamond film layer is deposited, the front surface of the semiconductor substrate layer is sequentially thinned and polished to obtain the low-stress heat dissipation layer semiconductor substrate.
In the invention, the thinning is preferably to thin the thickness of the semiconductor substrate layer to 62-67 μm, and more preferably to thin the thickness to 65 μm; in the specific embodiment of the invention, preferably, the side of the semiconductor substrate deposited with the diamond-like film and the diamond film is adhered to a tray of a thinning and polishing device through melted paraffin, after the adhesion, the front surface of the semiconductor substrate is placed on a grinding disc of the thinning device, so that the front surface of the semiconductor substrate is contacted with the grinding disc, then grinding liquid is added for thinning treatment, and a thickness tester is used for measuring the thinned thickness randomly in the process until the thinned thickness is reduced to the required thickness.
In the present invention, the thinning preferably includes coarse thinning and fine thinning performed in this order. In the present invention, the polishing liquid for rough thinning is preferably Al2O3Mixed feed liquid of powder and deionized water, the Al2O3The mass ratio of the powder to the deionized water is preferably 1: 2-4, more preferably 1:3, and the Al is2O3The diameter of the powder is preferably 8-10 μm, and more preferably 9 μm; the optimized reduction pressure of the coarse reduction is 240-260 g/cm2More preferably 250g/cm2(ii) a The rotation speed of the coarse thinning grinding disc is preferably 20-30 rpm, and more preferably 25 rpm; the grinding time for the coarse thinning is preferably 30-40 min, and more preferably 35 min.
In the present invention, the finely thinned polishing liquid is preferably Al2O3Mixed feed liquid of powder and deionized water, the Al2O3The mass ratio of the powder to the deionized water is preferably 1: 2-4, more preferably 1:3, and the Al is2O3The diameter of the powder is preferably 1-3 μm, and more preferably 2 μm; the thinning pressure of the fine thinning is preferably 280-320 g/cm2More preferably 300g/cm2(ii) a The rotating speed of the fine thinning grinding disc is preferably 25-35 rpm, and more preferably 30 rpm; the grinding time for fine thinning is preferably 15-25 min, and morePreferably 20 min.
And after the thinning is finished, polishing the front side of the thinned semiconductor substrate layer. In the invention, the polishing is preferably to polish the thickness of the semiconductor substrate layer to 50-60 μm, preferably to 55 μm. In the invention, the polishing is preferably carried out by using a buffed leather polishing pad, and the polishing abrasive is preferably NaClO solution and gamma-Al2O3The polishing pressure is preferably 200g/cm2～250g/cm2The polishing rotating speed is 30-40 rpm, and is more preferably 35 rpm.
The technical solution of the present invention will be clearly and completely described below with reference to the embodiments of the present invention.
Example 1
Taking gallium antimonide (GaSb) substrate as an example:
1. firstly, cleaning a GaSb substrate for 15min by using an ultrasonic cleaner in acetone, ethanol and deionized water respectively, and then cleaning the GaSb substrate by using N2The substrate sheet was blow dried.
2. Depositing a diamond-like carbon (DLC) buffer layer at room temperature by using radio frequency plasma enhanced chemical vapor deposition (RF-PECVD), and cleaning a substrate before depositing the DLC buffer layer, wherein the cleaning process comprises the following steps: placing the GaSb substrate slice in a plasma CVD chamber, and exposing the GaSb substrate slice to argon plasma (the flow rate is 300sccm) for 10min under 400V radio frequency self-bias; after the cleaning is finished, the constant radio frequency power of 200W is carried out, C2H2Depositing the diamond-like carbon buffer layer by gas at the flow rate of 300sccm for 20min to obtain a 5 μm thick diamond-like carbon buffer layer on the surface of the substrate;
3. depositing a diamond-like carbon buffer layer on the substrate by Microwave Plasma Chemical Vapor Deposition (MPCVD) technique, and depositing the diamond-like carbon buffer layer on the substrate before depositing the diamond film layer2/O2Pretreatment in microwave plasma (70Torr, 2300W, 2h) to etch away surface defects such as dislocations and polishing; then depositing a diamond film layer on the surface of the diamond-like carbon buffer layer, wherein the deposition conditions of the diamond film layer are as follows:the hydrogen flow is 200sccm, the methane flow is 4sccm, the microwave power is 3000W, the working pressure is 18KPa, the substrate temperature is 1180 ℃, and the diamond film layer is obtained after 6-hour deposition, wherein the thickness of the diamond film layer is 30 micrometers;
4. finally, thinning and polishing the surface of the GaSb substrate; before thinning, coating a layer of AZ4620 photoresist on the front side (the back side of the contact surface with the diamond-like carbon buffer layer) of the GaSb substrate as a protective layer, wherein the spin coating condition is 3500rad/min, repeatedly wiping the glass plate by alcohol, and after the glass plate is clean and free of dust, putting paraffin on the glass plate for heating; after the paraffin wax is melted, the diamond film surface of the GaSb substrate is pasted on a glass plate, and Al with the particle diameter of 9 mu m is taken2O3Mixing the powder and deionized water according to the mass ratio of 1:3, carrying out coarse thinning on the front surface of the GaSb substrate, and carrying out thinning pressure of 250g/cm2Roughly thinning the front surface of the GaSb substrate for 35min under the conditions that the rotating speed of a grinding pad is 25rpm and the indoor temperature is 20 ℃, and then selecting Al with the particle diameter of 2 mu m2O3Mixing the powder and deionized water according to the mass ratio of 1:3, carrying out fine thinning on the front surface of the GaSb substrate, and carrying out thinning pressure of 300g/cm2And finely thinning the front surface of the GaSb substrate for 20min under the conditions that the rotating speed of the grinding pad is 30rpm and the indoor temperature is 20 ℃, wherein the thickness of the GaSb substrate is thinned to 65 mu m. Then polishing the front surface of the GaSb substrate, selecting a soft acid-alkali corrosion-resistant buffed leather polishing pad, wherein the polishing material adopts an oxidant of NaClO solution and gamma-Al2O3Polishing abrasive system with polishing pressure of 230g/cm2The polishing speed was 35rpm, and the thickness of the GaSb substrate layer after polishing was 55 μm.
Example 2
Taking a GaAs substrate as an example:
1. firstly, cleaning a GaAs substrate in acetone, ethanol and deionized water respectively for 15min by using an ultrasonic cleaner, and then cleaning the GaAs substrate by using N2The gun blow-dries the substrate sheet.
2. Depositing a diamond-like carbon (DLC) buffer layer at room temperature by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD), and cleaning the substrate before depositing the DLC buffer layerThe washing process comprises the following steps: placing the GaAs substrate slice in a plasma CVD chamber, and exposing the GaAs substrate slice to argon plasma (the flow rate is 320sccm) for 10min under 400V radio frequency self-bias; after the cleaning is finished, the constant radio frequency power of 200W is carried out, C2H2Depositing the diamond-like carbon buffer layer by gas at the flow rate of 320sccm for 22min to obtain a 7 μm thick diamond-like carbon buffer layer on the surface of the substrate;
3. depositing a diamond-like carbon buffer layer on the substrate by Microwave Plasma Chemical Vapor Deposition (MPCVD) technique, and depositing the diamond-like carbon buffer layer on the substrate before depositing the diamond film layer2/O2Pretreatment in microwave plasma (70Torr, 2300W, 2h) to etch away surface defects such as dislocations and polishing; then depositing a diamond film layer on the surface of the diamond-like carbon buffer layer, wherein the deposition conditions of the diamond film layer are as follows: the hydrogen flow is 220sccm, the methane flow is 25sccm, the microwave power is 4000W, the working pressure is 18KPa, the substrate temperature is 1180 ℃, and the diamond film layer is obtained after 6-hour deposition, wherein the thickness of the diamond film layer is 32 micrometers;
4. finally, thinning and polishing the surface of the GaAs substrate; before thinning, coating a layer of AZ4620 photoresist on the front side (the back side of the contact surface of the GaAs substrate and the diamond-like carbon buffer layer) of the GaAs substrate as a protective layer, wherein the spin coating condition is 3500rad/min, repeatedly wiping the glass plate by alcohol, and after the glass plate is clean and free of dust, putting paraffin on the glass plate for heating; after the paraffin wax is melted, the diamond film surface of the GaAs substrate is pasted on a glass plate, and Al with the particle diameter of 9 mu m is taken2O3Mixing the powder and deionized water according to the mass ratio of 1:3, carrying out coarse thinning on the front side of the GaAs substrate, and carrying out thinning pressure of 250g/cm2Roughly thinning the front surface of the GaAs substrate for 35min under the conditions that the rotation speed of a grinding pad is 25rpm and the indoor temperature is 20 ℃, and then selecting Al with the particle diameter of 2 mu m2O3Mixing the powder and deionized water according to the mass ratio of 1:3, carrying out fine thinning on the front side of the GaAs substrate, and carrying out thinning pressure of 300g/cm2The GaAs substrate was polished at a polishing pad rotation speed of 30rpm and a room temperature of 20 DEG CThe surface is thinned for 20min, and the thickness of the GaAs substrate is thinned to 65 μm. Then, the front surface of the GaAs substrate is polished, a soft and acid-alkali corrosion-resistant buffed leather polishing pad is selected, and the polishing material adopts an oxidant of NaClO solution and gamma-Al2O3Polishing abrasive system with polishing pressure of 230g/cm2The polishing speed was 35rpm, and the thickness of the GaAs substrate layer after polishing was 55 μm.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.

Claims (9)

1. A semiconductor substrate with a low-stress heat dissipation layer is characterized in that the semiconductor substrate with the low-stress heat dissipation layer sequentially comprises a semiconductor substrate layer, a diamond-like carbon buffer layer and a diamond film layer from top to bottom; the thickness of the semiconductor substrate layer is 50-60 mu m; the thickness of the diamond-like carbon buffer layer is 4-7 mu m; the thickness of the diamond film layer is 28-32 mu m.
2. The low stress heat sink layer semiconductor substrate of claim 1 wherein the material of the semiconductor substrate layer comprises GaSb, GaAs, InP, Si, or InAs.
3. A method for preparing a semiconductor substrate with a low stress heat dissipation layer as defined in claim 1 or 2, comprising the steps of:
(1) depositing a diamond-like carbon buffer layer on the back of the semiconductor substrate by adopting a radio frequency plasma enhanced chemical vapor deposition method;
(2) depositing a diamond film layer on the surface of the diamond-like carbon buffer layer by adopting a microwave plasma chemical vapor deposition method;
(3) and sequentially thinning and polishing the front surface of the semiconductor substrate layer to obtain the low-stress heat dissipation layer semiconductor substrate.
4. According to claimThe method according to claim 3, wherein the carbon source for the RF plasma-enhanced chemical vapor deposition method is C2H2，C2H2The flow rate of the deposition solution is 280 to 320sccm, the power is 180 to 220W, and the deposition time is 20 to 90 min.
5. The method according to claim 3, wherein the microwave plasma CVD method comprises a hydrogen flow of 180 to 220sccm, a methane flow of 3 to 35sccm, a microwave power of 3000 to 4000W, a gas pressure of 17 to 19KPa, a substrate temperature of 1150 to 1200 ℃, and a deposition time of 5to 7 hours.
6. A method of manufacturing according to claim 3, wherein the step (1) is carried out by subjecting the back surface of the semiconductor substrate to a cleaning treatment before depositing the diamond-like carbon buffer layer, the cleaning treatment comprising the steps of: and placing the semiconductor substrate in argon plasma under 380-420V radio frequency self-bias, wherein the flow rate of the argon plasma is 280-320 sccm, and the placing time of the semiconductor substrate in the argon plasma is 8-12 min.
7. The method according to claim 3, wherein the step (2) comprises H-coating the surface of the diamond-like carbon buffer layer before depositing the diamond thin film layer2/O2Pretreating with microwave plasma; said H2/O2The pressure of the microwave plasma pretreatment is 65-75 Torr, and the H2/O2The power of microwave plasma pretreatment is 2200-2400W, and H is2/O2The microwave plasma pretreatment time is 100-140 min.
8. The production method according to claim 3, wherein the thickness of the semiconductor substrate layer after the thinning in the step (3) is 62 to 67 μm, and the thickness of the semiconductor substrate layer after the polishing is 50 to 60 μm.
9. Use of the low stress heat sink semiconductor substrate according to claim 1 or 2 or the low stress heat sink semiconductor substrate prepared by the method according to any one of claims 3 to 8 in an optoelectronic device.
CN201911397643.3A 2019-12-30 2019-12-30 Low-stress heat dissipation layer semiconductor substrate and preparation method and application thereof Pending CN111005009A (en)

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