CN110994108A - Four-way arbitrary power division ratio Gysel type power divider/combiner - Google Patents

Four-way arbitrary power division ratio Gysel type power divider/combiner Download PDF

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CN110994108A
CN110994108A CN201911392271.5A CN201911392271A CN110994108A CN 110994108 A CN110994108 A CN 110994108A CN 201911392271 A CN201911392271 A CN 201911392271A CN 110994108 A CN110994108 A CN 110994108A
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transmission line
metal
layer
grounding
branch transmission
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CN110994108B (en
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陈海东
李虹萍
薛泉
车文荃
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South China University of Technology SCUT
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/12—Coupling devices having more than two ports
    • H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type

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Abstract

The invention discloses a Gysel type power divider/combiner with four paths of arbitrary power division ratios, which comprises a top layer circuit board, a middle metal layer, a bottom layer circuit board, metal pins, metalized via holes and dielectric columns, wherein the top layer circuit board is provided with a plurality of metal pins; the top layer circuit board comprises an upper layer microstrip structure, a first dielectric substrate and first grounding metal, and the bottom layer circuit board comprises a lower layer microstrip structure, a second dielectric substrate and second grounding metal; the upper-layer microstrip structure is attached to the upper surface of the first dielectric substrate, and the first grounding metal is attached to the lower surface of the first dielectric substrate; the lower layer microstrip structure is attached to the lower surface of the second dielectric substrate, and the second grounding metal is attached to the upper surface of the second dielectric substrate; the upper layer microstrip structure and the lower layer microstrip structure are connected through metal pins, and the dielectric columns are arranged in the middle metal layer and used for separating the metal pins from the middle metal layer. The invention overcomes the defect that the existing power divider only has equal power distribution ratio and equal port load.

Description

Four-way arbitrary power division ratio Gysel type power divider/combiner
Technical Field
The invention relates to the technical field of electronic devices, in particular to a four-path arbitrary power division ratio Gysel type power divider/combiner.
Background
The power divider is a device which divides one path of input signal energy into two paths or multiple paths of input signal energy and outputs equal or unequal energy, or synthesizes multiple paths of input signal energy into one path of output, and is called a combiner. Power splitters are widely used in antenna feed systems, phased array radar systems, and the like. The Wilkinson type power divider is one of the most typical power dividers, but the application of the Wilkinson type power divider in a high-power occasion is limited by the distributed capacitance effect between the used isolation resistor and the floor, and the Gysel type power divider has the advantage of large power capacity and can be used in the high-power occasion.
At present, most of the common Gysel type power dividers are two paths of outputs, most of the Gysel type power dividers with the multi-path outputs are power average distribution, multi-path equal division is realized, and most of the Gysel type power dividers are formed by cascading one-to-two power dividers in structure. At home and abroad, researches on four or more Gysel type power dividers capable of realizing any power distribution ratio are few, and a published patent CN204809372U provides a trisection Gysel type power divider/combiner, wherein the trisection Gysel type power divider can only realize power average distribution, and a design formula of the Gysel type power divider with the structure is not given yet.
Disclosure of Invention
The invention aims to provide a Gysel type power divider/combiner with four paths of arbitrary power division ratios.
The invention is realized by at least one of the following technical schemes.
A four-path arbitrary power division ratio Gysel type power divider/combiner comprises a top layer circuit board, a middle metal layer, a bottom layer circuit board, metal pins, metalized via holes and dielectric columns;
the top layer circuit board comprises an upper layer microstrip structure, a first dielectric substrate and first grounding metal, and the bottom layer circuit board comprises a lower layer microstrip structure, a second dielectric substrate and second grounding metal;
the upper-layer microstrip structure is attached to the upper surface of the first dielectric substrate, and the first grounding metal is attached to the lower surface of the first dielectric substrate; the lower layer microstrip structure is attached to the lower surface of the second dielectric substrate, and the second grounding metal is attached to the upper surface of the second dielectric substrate; the upper layer microstrip structure and the lower layer microstrip structure are connected through metal pins, and the dielectric column is arranged in the middle metal layer and used for separating the metal pins from the middle metal layer; the first grounding metal and the second grounding metal dig holes around the metal pin to ensure that the first grounding metal and the second grounding metal are not in contact with the metal pin respectively.
Furthermore, the upper layer microstrip structure comprises a load resistance value Rx0Port0, four load resistances RxnPort n, and four characteristic impedances of Z0nN ═ 1,2,3,4 and four isolation networks; the lower microstrip structure includes two isolation networks.
Furthermore, each isolation network mainly comprises two characteristic impedances respectively ZmnmAnd ZmnnThe first branch transmission line and the two characteristic impedances are respectively ZmnAnd ZnmA second branch transmission line, and two resistors RmnAnd RnmWherein m is (1,2,3,4), n is (1,2,3,4), and m < n, and the first-stage transmission line, the second branch transmission line and the third branch transmission line of each isolation network are all one-fourth of the wavelength at the operating frequency.
The Port0 in the upper-layer microstrip structure is at the center of the upper-layer microstrip structure, the Port0 is at the center of the upper-layer microstrip structure, and four first-stage transmission lines are connected with the Port0 and radially arranged from the center of the structure to the periphery; the other end of each first-stage transmission line has a characteristic impedance of RznThe connecting Port transmission line is connected with Port n, n is (1,2,3,4), and the four Port n are uniformly distributed on the edge of the first dielectric board substrate; the other end of each first-stage transmission line is connected with a first branch transmission line in an inter-isolation network of an adjacent port, the other end of the first branch transmission line is connected with a second branch transmission line, the first branch transmission line is connected with a ground resistor through a connecting resistor transmission line, the other end of the ground resistor is connected with a first ground plate, a second ground plate is arranged on the dielectric plate, and a metalized ground plate is arranged on the second ground plateThe metalized through hole penetrates through the dielectric plate to reach the middle metal layer; the other end of the second branch transmission line is connected with the other end of the second branch transmission line of the adjacent port.
Further, the lower microstrip structure includes an isolation network between Port1 and Port3 and an isolation network between Port2 and Port 4; one end of a first branch transmission line in an isolation network between the Port1 and the Port3 respectively passes through a second dielectric plate, a second grounding metal, a middle metal layer, a first grounding metal and a first dielectric plate through a metal needle and is connected with one end of a first-stage transmission line in an upper-layer microstrip structure in a top-layer circuit board, the other end of the first branch transmission line is respectively connected with the second branch transmission line in the isolation network, meanwhile, the other end of the first branch transmission line is respectively connected with a grounding resistor through a connecting resistor transmission line, and the other end of the grounding resistor is connected to a first grounding plate; one end distance is cut off between the two second branch transmission lines to avoid intersecting with the second branch transmission line in the other isolation network, the two second branch transmission lines are connected through a bridge structure, the bridge structure arches like a bridge at the overlapping position, and the two ends of the two second branch transmission lines in the isolation network between the Port1 and the Port3 are connected together.
Furthermore, one end of a first branch transmission line in the isolation network between the Port2 and the Port4 respectively penetrates through the second dielectric plate, the second grounding metal, the middle metal layer, the first grounding metal and the first dielectric plate through a metal needle to be connected with one end of a first-stage transmission line in an upper-layer microstrip structure in the top-layer circuit board, the other end of the first branch transmission line is respectively connected with the second branch transmission line in the isolation network, meanwhile, the other end of the first branch transmission line is respectively connected with a grounding resistor through a connecting resistor transmission line, and the other end of the grounding resistor is connected to the first grounding plate. The other ends of the two second branch transmission lines are connected together.
Furthermore, the top layer circuit board, the middle metal layer and the bottom layer circuit board are sequentially arranged in the metal frame, and the Port0 is connected with four first-stage transmission lines Z of the upper-layer microstrip structure through connecting lines0nThe connecting wire is fixed on the top layer circuit board through a connector, and the connector passes through the first medium through the connecting columnInserting the plate into the middle metal layer for fixing; the Port n adapter is connected to one end of the Port transmission line through the side wall of the metal frame.
Compared with the prior art, the invention has the beneficial effects that:
(1) the invention can realize power distribution and synthesis of any power division ratio and any port impedance, provides a simple and effective design method for designing the four-way Gysel type power divider, overcomes the defect that the traditional four-way Gysel type power divider only has equal power distribution ratio and equal port load, can ensure that each port of the four-way unequal Gysel type power divider has good matching and each output port has good isolation; (2) the invention ensures that the dynamic adjustable range of the characteristic impedance of the four-path power divider structure transmission line is large; (3) the Gysel type power divider with the four paths of arbitrary power dividing ratios can bear high power and is suitable for high-power distribution synthesis application of microwaves.
Drawings
FIG. 1 is a structural complementary diagram of a Gysel-type power divider with four paths of arbitrary power dividing ratios in the present embodiment;
fig. 2 is a schematic cross-sectional view of the four-way arbitrary power division ratio Gysel type power divider circuit structure according to the present embodiment, from left to right;
fig. 3 is a schematic cross-sectional view of the four-way arbitrary power division ratio Gysel type power divider circuit structure from front to back in the present embodiment;
fig. 4 is a top view of the circuit structure of the Gysel type power divider with four paths of arbitrary power dividing ratios in the present embodiment;
fig. 5 is a bottom view of the circuit structure of the Gysel-type power divider with an arbitrary power division ratio of the four paths in this embodiment;
fig. 6 is a diagram of simulation and test results of port reflection coefficient amplitudes of the four-way unequal Gysel-type power divider according to the present embodiment;
fig. 7 is a diagram of simulation and test results of port transmission coefficient amplitudes of the four-way unequal Gysel-type power divider according to the present embodiment;
fig. 8 is a diagram of simulation and test results of the port isolation coefficient amplitude of the four-way unequal Gysel type power divider according to the present embodiment.
Detailed Description
The present invention is described in further detail below with reference to the attached drawing figures.
As shown in fig. 2 and 3, the four-path arbitrary power division ratio Gysel type power divider/combiner comprises a top layer circuit board, a middle metal layer 3, a bottom layer circuit board, metal pins, metalized vias and dielectric pillars (81, 82, 83, 84); the top circuit board, the middle metal layer 3 and the bottom circuit board are all arranged in the metal frame,
the top layer circuit board comprises an upper layer microstrip structure 5, a first dielectric substrate 1 and first grounding metal 6, and the bottom layer circuit board comprises a lower layer microstrip structure 4, a second dielectric substrate 2 and second grounding metal 7;
as shown in fig. 4, the upper microstrip structure 5 is attached to the upper surface of the first dielectric substrate 1, and the first grounding metal 6 is attached to the lower surface of the first dielectric substrate 1; the lower-layer microstrip structure 4 is attached to the lower surface of the second dielectric substrate 2, and the second grounding metal 7 is attached to the upper surface of the second dielectric substrate 2; the upper layer microstrip structure 5 and the lower layer microstrip structure 4 are connected by a metal needle (b)1、b2、b3、b4) Connected, dielectric pillars (81, 82, 83, 84) are disposed in the intermediate metal layer 3 for spacing the metal pins (b)1、b2、b3、b4) And an intermediate metal layer 3; the first grounding metal 6 and the second grounding metal 7 are dug around the metal pin, and the first grounding metal 6 and the second grounding metal 7 are used.
The upper layer microstrip structure 5 comprises a load resistance value Rx0Port0, four load resistances RxnPort n and four characteristic impedances of Z0nN-1, 2,3,4, and four isolation networks (P)12、P14、P23、P34) (ii) a The lower microstrip structure 4 comprises two isolation networks (P)13、P24)。
Each isolation network mainly comprises two characteristic impedances respectively ZmnmAnd ZmnnThe first branch transmission line and the two characteristic impedances are respectively ZmnAnd ZnmA second branch transmission line, and two resistors RmnAnd RnmWherein m ═ 1,2,3,4, and n ═ are set to the ground resistance(1,2,3,4), and m is less than n, the first transmission line, the second branch transmission line and the third branch transmission line of each isolation network are all one quarter of the wavelength under the working frequency.
The Port0 of the upper microstrip structure 5 is arranged at the center of the upper microstrip structure 5, and four first-stage transmission lines (Z)01、Z02、Z03、Z04) Is connected with the Port0 and is radially arranged from the center of the structure to the periphery; each first stage transmission line (Z)01、Z02、Z03、Z04) Is connected to the other end of the first resistor via a section of characteristic impedance RznThe connecting Port transmission line a is connected with a Port n, n is (1,2,3,4), and the four Port n are uniformly distributed on the edge of the first dielectric plate substrate 1; each first stage transmission line (Z)01、Z02、Z03、Z04) The other end of the first branch transmission line is connected with a first branch transmission line in an isolation network between adjacent ports, the other end of the first branch transmission line is connected with a second branch transmission line, the first branch transmission line is connected with a grounding resistor through a connecting resistor transmission line d, the other end of the grounding resistor is connected with a first grounding plate k, a second grounding plate g is arranged on the dielectric plate, a metalized through hole is arranged on the second grounding plate g, and the metalized through hole penetrates through the dielectric plate to be communicated with the middle metal layer 3; the other end of the second branch transmission line is connected with the other end of the second branch transmission line of the adjacent port.
The top circuit board, the middle metal layer 3 and the bottom circuit board are all arranged in a metal frame, and the Port0 is connected with four first-stage transmission lines Z of the upper-layer microstrip structure 5 through connecting lines0nThe connecting wire is fixed on the top layer circuit board by a connector 10, and the connector 10 is fixed by inserting the connecting wire (91, 92, 93, 94) into the middle metal layer 3 through the first dielectric board 1; the output Port n adapter is connected to one end of the Port transmission line e through the side wall of the metal frame c, and n is 1,2,3 and 4.
As shown in fig. 5, the lower microstrip structure 4 includes an isolation network between Port1 and Port3 and an isolation network between Port2 and Port 4. First in an isolated network between Port1 and Port3Branch line (Z)131、Z133) One end of each needle passes through the metal needle (b)1、b3) Passes through the second dielectric plate 2, the second grounding metal 7, the middle metal layer 3, the first grounding metal 6 and the first dielectric plate 1 and a first-stage transmission line (Z) in an upper-layer microstrip structure 5 in the top-layer circuit board01、Z03) One end of the second branch transmission line is connected with the other end of the first branch transmission line (Z) in the isolation network13、Z31) Connected with the other end of the resistor via a connecting resistor transmission line d and connected with a ground resistor (R)13、R31) Phase connection, ground resistance (R)13、R31) The other ends of the first grounding plates are respectively connected to the two first grounding plates k; two second branch transmission lines (Z)13、Z31) A second branch transmission line (Z) with a distance between the Port2 and the Port4 to avoid the isolation network24、Z42) And the two ends of the two second branch transmission lines in the isolation network between the Port1 and the Port3 are connected together by a bridge structure which is arched like a bridge at the overlapped part.
First branch (Z) in an isolated network between Port2 and Port4242、Z244) One end of each needle passes through the metal needle (b)2、b4) And passes through the second dielectric plate 2, the second grounding metal 7, the middle metal layer 3, the first grounding metal 6 and the first dielectric plate 1 and a first-stage transmission line (Z) in an upper-layer microstrip structure 5 in the top-layer circuit board02、Z04) One end of the second branch transmission line is connected with the other end of the first branch transmission line (Z) in the isolation network24、Z42) Connected with the ground resistor (R) via connecting resistor transmission line (d)24、R42) Phase connection, ground resistance (R)24、R42) And the other end connections of the first grounding plate k are respectively connected to the two first grounding plates k. Two second branch transmission lines (Z)24、Z42) Are connected together at the other ends.
The load resistance Rx0 of Port0 and the load resistance Rxn of four Port ports n may take arbitrary values, n ═ 1,2, 3. The characteristic impedance of each second branch transmission line may have the same or different arbitrary values, and the resistance value of each ground resistor may have the same or different arbitrary values. The characteristic impedance of each first-stage transmission line is determined by the power dividing ratio of the power divider and the load resistance value of each port, and the power dividing ratio can take any ratio; the characteristic impedance of each first branch transmission line is determined by the power dividing ratio of the power divider, the load resistance value of each port, the characteristic impedance of the second branch transmission line and the resistance value of the grounding resistor; the characteristic impedance of each connection port transmission line and each connection resistance transmission line is generally 50 ohms.
The specific execution steps of the four-path arbitrary power division ratio Gysel type power divider/combiner are as follows:
step 1, determining the working frequency f of the power divider (determined according to requirements) and the power distribution relation (power division ratio) k of each path of port2 1:k2 2:k2 3:k2 4＝P1:P2:P3:P4In which P is1、P2、P3、P4Output or input power size of Port1, Port2, Port3, Port4, respectively; in the embodiment, the center frequency f is 3.5 GHz;
step 2, determining the resistance R of the load connected with the Port0x0Resistor R of load connected with Port nxn,n＝(1，2，3)；
Step 3, determining the characteristic impedance Z of twelve second branch transmission lines12、Z21、Z13、Z31、Z14、Z41、Z23、Z32、Z24、Z34、Z34、Z43And a resistance value R of twelve ground resistors12、R21、R13、R31、R14、R41、R23、R32、R24、R42、R34、R43。
Step 4, according to the determined conditions, calculating the characteristic impedance values of four first-stage transmission lines and twelve first branch transmission lines of the power divider:
Figure BDA0002345302540000061
Figure BDA0002345302540000062
Figure BDA0002345302540000063
m ═ 1,2,3,4, n ═ 1,2,3,4, and m < n.
And 5, synthesizing the transmission line width line length according to the calculated transmission line impedance value and the characteristics of the used plate.
As shown in fig. 1, the circuit board of the four-path arbitrary power division ratio Gysel type power divider/combiner provided by the invention can be directly printed on a high-frequency PCB printed board. The length and the line width of the transmission line are different according to the working frequency of the power divider and different PCB boards.
The embodiment is a four-way unequal Gysel type power divider, the used working frequency point is f ═ 3.5GHz, and the input Port is
The load impedance of 0 and the output Port n are both 50 Ω, and n is 1,2, 3. The power distribution ratio of Port1, Port2 and Port3 is k2 1:k2 2:k2 3The high frequency PCB board is Rogers 5880 with a dielectric constant of 2.2 and a thickness of 0.787mm 1:2: 3.
The specific execution steps are as follows:
step a, determining the working frequency f of the power divider to be 3.5GHz and the power distribution relation of each port:
k2 1:k2 2:k2 3:k2 4＝2:3:4:5；
step b, determining the resistance value R of the load connected with the input Port0x0The resistance value R of the load connected to the output Port n is determined at 50 Ωxn＝50Ω，n＝1，2，3，4；
B, determining the characteristic impedance of twelve second branch transmission lines: z12＝35Ω，Z21＝35Ω，Z13＝35Ω，Z31＝35Ω，Z14＝35Ω，Z41＝35Ω，Z23＝35Ω，Z32＝35Ω，Z24＝35Ω，Z42＝35Ω，Z34＝35Ω，Z4335 Ω; determining the resistance values of twelve grounding resistors: r12＝50Ω，R21＝50Ω，R13＝50Ω，R31＝50Ω，R14＝50Ω，R41＝50Ω，R23＝50Ω，R32＝50Ω，R24＝50Ω，R42＝50Ω，R34＝50Ω，R43＝50Ω；
Step c, calculating the characteristic impedance Z of the first-stage transmission line from the first path to the fourth path0nThe value is:
Figure BDA0002345302540000071
Figure BDA0002345302540000072
Figure BDA0002345302540000073
Figure BDA0002345302540000074
step d, calculating an isolation network P between the first path and the second path12The characteristic impedance Z of the first branch transmission line121And the characteristic impedance Z of the first branch transmission line122The value is:
Figure BDA0002345302540000075
Figure BDA0002345302540000076
calculating an isolation network P between the first path and the third path13First inCharacteristic impedance Z of branch transmission line131And the characteristic impedance Z of the first branch transmission line133The value is:
Figure BDA0002345302540000077
Figure BDA0002345302540000078
computing an isolation network P between a first path and a fourth path14The characteristic impedance Z of the first branch transmission line141And the characteristic impedance Z of the first branch transmission line144The value is:
Figure BDA0002345302540000081
Figure BDA0002345302540000082
calculating an isolation network P between the second path and the third path23The characteristic impedance Z of the first branch transmission line232And the characteristic impedance Z of the first branch transmission line233The value is:
Figure BDA0002345302540000083
Figure BDA0002345302540000084
computing an isolation network P between the second path and the fourth path24The characteristic impedance Z of the first branch transmission line242And the characteristic impedance Z of the first branch transmission line244The value is:
Figure BDA0002345302540000085
Figure BDA0002345302540000086
calculating an isolation network P between the third path and the fourth path34The characteristic impedance Z of the first branch transmission line343And the characteristic impedance Z of the first branch transmission line344The value is:
Figure BDA0002345302540000087
Figure BDA0002345302540000088
and e, synthesizing the actual transmission line width line length according to the calculated transmission line impedance value and the used plate characteristics.
As shown in FIG. 6, the reflection coefficients of Port n are S (0,0) to S (4, 4), the simulation result is represented by S-S (n, n), and the test result is represented by M-S (n, n), and it can be seen from the figure that the reflection coefficients of one input Port and four output ports are all less than-16 dB within the range of 3.3-3.7GHz, and the Port matching performance is good.
As shown in fig. 7, the transmission coefficients of the ports are S (0, n), n is 1,2,3, the simulation result is represented by S-S (0, n), the test result is represented by M-S (0, n), and it can be seen from the figure that, in the range of 3.3 to 3.7GHz, the power division ratio of the four output ports is approximately 2: 2.92: 4.1: 4.9, approximating design requirement 2: 3: 4: 5, the power distribution characteristic is good.
As shown in fig. 8, the isolation coefficient of the output Port n is S (m, n), where m is 1,2, 3; n is 1,2,3, and M is less than n), the simulation result is represented by S-S (M, n), the test result is represented by M-S (M, n), and it can be seen from the figure that in Port n, in the range of 2-5GHz, the isolation coefficient between the four output ports is less than-15 dB, and the Port isolation is good.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.

Claims (7)

1. A Gysel-type power divider/combiner with four paths of arbitrary power division ratios is characterized by comprising a top circuit board, a middle metal layer (3), a bottom circuit board and metal pins (b)n) A metalized via and a dielectric pillar;
the top layer circuit board comprises an upper layer microstrip structure (5), a first dielectric substrate (1) and first grounding metal (6), and the bottom layer circuit board comprises a lower layer microstrip structure (4), a second dielectric substrate (2) and second grounding metal (7);
the upper-layer microstrip structure (5) is attached to the upper surface of the first dielectric substrate (1), and the first grounding metal (6) is attached to the lower surface of the first dielectric substrate (1); the lower-layer microstrip structure (4) is attached to the lower surface of the second dielectric substrate (2), and the second grounding metal (7) is attached to the upper surface of the second dielectric substrate (2); the upper layer microstrip structure (5) and the lower layer microstrip structure (4) are connected through a metal needle (b)nN is 1,2,3,4), and dielectric columns are arranged in the intermediate metal layer (3) for separating the metal pins (b)n) And an intermediate metal layer (3); the first grounding metal (6) and the second grounding metal (7) are arranged on the metal needle (b)n) Holes are dug around to ensure that the first grounding metal (6) and the second grounding metal (7) are respectively connected with the metal pin (b)n) Without touching.
2. The four-way arbitrary power division Gysel type power divider/combiner according to claim 1, wherein the upper microstrip structure (5) includes a load resistance value Rx0Port0, four load resistances RxnPort n and four characteristic impedances of Z0nN ═ 1,2,3,4 and four isolated networks (P)12、P14、P23、P34) (ii) a The lower layer microstrip structure (4) comprises two isolation networks (P)13、P24)。
3. The four-way arbitrary power division ratio Gysel-type power divider/combiner of claim 2, wherein each isolation network is mainly composed of two characteristic impedances, respectively ZmnmAnd ZmnnFirst branch transmission line, two characteristic resistorsEach of the antibodies is ZmnAnd ZnmA second branch transmission line, and two resistors RmnAnd RnmWherein m is (1,2,3,4), n is (1,2,3,4), and m < n, and the first-stage transmission line, the second branch transmission line and the third branch transmission line of each isolation network are all one-fourth of the wavelength at the operating frequency.
4. The four-way arbitrary power division ratio Gysel type power divider/combiner according to claim 2, wherein the Port0 of the upper microstrip structure (5) is at the center of the upper microstrip structure (5), and four first-stage transmission lines (Z) are provided01、Z02、Z03、Z04) Is connected with the Port0 and is radially arranged from the center of the structure to the periphery; each first stage transmission line (Z)01、Z02、Z03、Z04) Is connected to the other end of the first resistor via a section of characteristic impedance RznThe connecting Port transmission line (a) is connected with Port n, n is (1,2,3,4), and the four Port n are uniformly distributed on the edge of the first dielectric plate substrate; each first stage transmission line (Z)01、Z02、Z03、Z04) The other end of the first branch transmission line is connected with a first branch transmission line in an isolation network between adjacent ports, the other end of the first branch transmission line is connected with a second branch transmission line, the first branch transmission line is connected with a grounding resistor through a connecting resistor transmission line (d), the other end of the grounding resistor is connected with a first grounding plate (k), a second grounding plate (g) is arranged on the dielectric plate, a metalized through hole is formed in the second grounding plate (g), and the metalized through hole penetrates through the dielectric plate to be communicated with the middle metal layer (3); the other end of the second branch transmission line is connected with the other end of the second branch transmission line of the adjacent port.
5. The four-way arbitrary power division ratio Gysel-type power divider/combiner according to claim 2, characterized in that the lower microstrip structure (4) comprises an isolation network between Port1 and Port3 and an isolation network between Port2 and Port 4; first branch transmission in isolated network between Port1 and Port3Line (Z)131、Z133) One end of each needle passes through the metal needle (b)1、b3) Passes through the second dielectric plate (2), the second grounding metal (7), the middle metal layer (3), the first grounding metal (6) and the first dielectric plate (1) and a first-stage transmission line (Z) in an upper-layer microstrip structure (5) in the top-layer circuit board01、Z03) One end of the second branch transmission line is connected with the other end of the first branch transmission line (Z) in the isolation network13、Z31) Connected with the other end of the resistor through a connecting resistor transmission line (d) and respectively connected with a grounding resistor (R)13、R31) Phase connection, ground resistance (R)13、R31) Is connected to the first ground plate (k); two second branch transmission lines (Z)13、Z31) The two ends of the two second branch transmission lines in the isolation network between the Port1 and the Port3 are connected together by a bridge structure which arches like a bridge at the overlapping position.
6. The four-way arbitrary power division ratio Gysel-type power divider/combiner of claim 4, wherein the first branch transmission line (Z) in the isolation network between Port2 and Port4242、Z244) One end of each needle passes through the metal needle (b)2、b4) Passes through the second dielectric plate (2), the second grounding metal (7), the middle metal layer (3), the first grounding metal (6) and the first dielectric plate (1) and a first-stage transmission line (Z) in an upper-layer microstrip structure (5) in the top-layer circuit board02、Z04) One end of the second branch transmission line is connected with the other end of the first branch transmission line (Z) in the isolation network24、Z42) Connected with the other end of the resistor through a connecting resistor transmission line (d) and respectively connected with a grounding resistor (R)24、R42) Phase connection, ground resistance (R)24、R42) Is connected to the first ground plane (k), two second branch transmission lines (Z)24、Z42) Are connected together at the other ends.
7. According to the claimsThe four-path arbitrary power division ratio Gysel type power divider/combiner is characterized in that a top layer circuit board, a middle metal layer (3) and a bottom layer circuit board are sequentially arranged in a metal frame (c), and an input Port0 is connected to four first-stage transmission lines Z of an upper-layer microstrip structure (5) through connecting lines0nThe connecting line is fixed on the top layer circuit board through a connector (10), and the connector (10) penetrates through the first dielectric plate (1) through connecting columns (91, 92, 93 and 94) to be inserted into the middle metal layer (3) for fixing; the output Port n adapter is connected to one end of the Port transmission line (e) through a side wall of the metal frame (c), and n is (1,2,3, 4).
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