CN110993787A - Gate tube with novel material and structure - Google Patents
Gate tube with novel material and structure Download PDFInfo
- Publication number
- CN110993787A CN110993787A CN201911046676.3A CN201911046676A CN110993787A CN 110993787 A CN110993787 A CN 110993787A CN 201911046676 A CN201911046676 A CN 201911046676A CN 110993787 A CN110993787 A CN 110993787A
- Authority
- CN
- China
- Prior art keywords
- layer
- metal electrode
- gate tube
- dimensional material
- switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 117
- 229910052751 metal Inorganic materials 0.000 claims abstract description 55
- 239000002184 metal Substances 0.000 claims abstract description 55
- 230000007547 defect Effects 0.000 claims abstract description 31
- 230000005284 excitation Effects 0.000 claims abstract description 9
- 238000009413 insulation Methods 0.000 claims description 14
- 229910016317 BiTe Inorganic materials 0.000 claims description 12
- 238000005485 electric heating Methods 0.000 claims description 12
- 238000010884 ion-beam technique Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229910017255 AsSe Inorganic materials 0.000 claims description 6
- 229910017259 AsTe Inorganic materials 0.000 claims description 6
- 229910005642 SnTe Inorganic materials 0.000 claims description 6
- -1 transition metal chalcogenide compound Chemical class 0.000 claims description 6
- 229910002616 GeOx Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229910003185 MoSx Inorganic materials 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910008483 TiSe2 Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- 229910052723 transition metal Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 abstract description 120
- 230000035699 permeability Effects 0.000 abstract description 6
- 239000002346 layers by function Substances 0.000 abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 4
- 229910021389 graphene Inorganic materials 0.000 abstract description 4
- 230000015654 memory Effects 0.000 description 16
- 230000001276 controlling effect Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910004166 TaN Inorganic materials 0.000 description 2
- 229910008599 TiW Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- HTXDPTMKBJXEOW-UHFFFAOYSA-N iridium(IV) oxide Inorganic materials O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 150000003464 sulfur compounds Chemical class 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
Landscapes
- Semiconductor Memories (AREA)
Abstract
The invention discloses a gate tube with novel materials and a novel structure, which is characterized by comprising a first metal electrode layer, a two-dimensional material layer, a switch layer plug column and a second metal electrode layer; the switch layer plug column is made of a material which can form a conductive wire under the excitation of current or voltage; a layer of two-dimensional material with poor permeability similar to graphene is added between a gate tube functional layer and an electrode, defects can be generated by the aid of the two-dimensional material, and according to the property that conductive wires can grow along the defects, when the areas of the defects are small, the formed conductive wires are thin, so that when excitation applied to the gate tube disappears, the conductive wires disappear more easily, the gate tube is closed more easily, performance of the gate tube is greatly improved, and the gate tube effectively overcomes various defects in the prior art and has high industrial value.
Description
Technical Field
The invention belongs to the technical field of micro-nano electronics, and particularly relates to a gate tube made of a novel material and having a novel structure.
Background
The nonvolatile memory with two ends adopts gate tube devices with two ends to inhibit the leakage current problem widely existing in a large-scale array. The gating device is a switching device and has the working principle that: before the starting voltage/current is reached, the gate tube is in a closed state, the resistance is very high, and the leakage current can be effectively inhibited; after the starting voltage/current is reached, the gate tube is opened and is reduced to an extremely low resistance, so that enough operating current is provided for the corresponding storage unit. In a large-scale array, a gate tube is connected with a memory unit, when the memory unit is operated, voltage or current is applied to open the gate tube connected with a selected unit, and then read-write operation is carried out on the selected memory unit. The gate tubes connected with unselected memory units are all in a closed state, the resistance is very high, leakage current can be inhibited, and the array power consumption is reduced. The two-end gating tube device can effectively solve the problem of leakage current, can be vertically stacked with the memory unit in the array integration process, does not need to occupy extra area, and improves the integration density; meanwhile, the structure integrating the memories at the two ends and the gate tube has the stacking capacity in the three-dimensional direction, and the storage density is further improved.
At present, mainstream gate tubes are mainly classified into the following categories: the device comprises a bidirectional threshold switch type gate tube, a metal-insulator conversion gate tube, a mixed ion electron conductive gate tube, a potential barrier type gate tube and a conductive bridge threshold switch type gate tube.
The first four gate tube devices have low off-state resistance and cannot well inhibit leakage current. The conductive bridge threshold switching device has extremely low leakage current (high on-off ratio) and low power consumption application prospect, however, the driving current is very low, which is far from enough erasing current for commercial phase change memories and resistive random access memories.
Therefore, it is desirable to provide a conductive bridge threshold switching type gating device that has a high switching ratio while providing sufficient operating current for the memory cell.
Disclosure of Invention
Aiming at least one of the defects or the improvement requirements in the prior art, in particular to further improve the switching performance of the gate tube, the invention provides a conductive wire-based gate tube device using a novel material and a novel structure. Therefore, the two-dimensional material with poor permeability can be used, so that the switch layer material can be prevented from diffusing to the electrode, and the thickness of the conductive wire formed in the switch layer when the gate tube is opened can be controlled by controlling the size of the surface defect of the two-dimensional material, so that the switching performance of the gate tube can be better.
To achieve the above object, according to one aspect of the present invention, there is provided a gate pipe having a novel material and structure, including, in order:
a semiconductor substrate;
a first metal electrode layer;
the electric heating insulating layer is provided with small holes, and the bottom of each small hole is provided with the first metal electrode layer;
the two-dimensional material layer is formed in the small holes wrapped by the electric heating insulating layer, and the bottom of the two-dimensional material layer is formed on the top of the first metal electrode layer; the two-dimensional material layer is made of anti-seepage material and can regulate and control surface defects;
the switch layer plug column is formed in the small hole wrapped by the electrothermal insulating layer, and the bottom of the switch layer plug column is formed on the top of the two-dimensional material layer; the switch layer plug column is made of a material which can form a conductive wire under the excitation of current or voltage;
and the second metal electrode layer is formed on the tops of the electrothermal insulating layer and the switch layer plug posts.
Or, the gate tube with the novel material and the structure comprises the following components in sequence:
a semiconductor substrate;
a first metal electrode layer;
the electric heating insulating layer is provided with small holes, and the bottom of each small hole is provided with the first metal electrode layer;
the switch layer plug column is formed in the small hole wrapped by the electrothermal insulating layer, and the bottom of the switch layer plug column is formed on the top of the first metal electrode layer; the switch layer plug column is made of a material which can form a conductive wire under the excitation of current or voltage;
the two-dimensional material layer is formed in the small hole wrapped by the electrothermal insulating layer, and the bottom of the two-dimensional material layer is formed at the top of the switch layer plug column; the two-dimensional material layer is made of anti-seepage material and can regulate and control surface defects;
and the second metal electrode layer is formed on the top of the electric heating insulating layer and the two-dimensional material layer.
Preferably, the two-dimensional material layer is a transition metal chalcogenide compound.
Preferably, the material of the two-dimensional material layer is selected from any one of MoSx, WSx, BN, MoSex, MoTex, WSex, WTex, TiSe2 and black phosphorus.
Preferably, ion beam bombardment is used on the same two-dimensional material, and the size of the surface defects is adjusted by controlling factors including ion beam density and bombardment time.
Preferably, the switching layer plug includes a chalcogenide compound.
Preferably, the material of the switch layer plug is selected from any one or any combination of GeTex, GeSex, GeSx, GeSbTex, GeSbSbx, GeOx, SbTex, SbS, SbSe, BiSe, BiS, BiTe, AsTe, AsSe, SnTe and BiTe.
Preferably, the material of the switch layer plug is selected from any one or any combination of GeTex, GeSex, GeSx, GeSbTex, GeSbSx, GeOx, SbTex, SbS, SbSe, BiSe, BiS, BiTe, AsTe, AsSe, SnTe and BiTe, and is further doped with S, N, O and a mixture of at least one of Si elements.
Preferably, the first metal electrode layer is an active electrode, and the second metal electrode layer is an inert electrode.
Preferably, the first metal electrode layer is an inert electrode, and the second metal electrode layer is an active electrode.
The above-described preferred features may be combined with each other as long as they do not conflict with each other.
Generally, compared with the prior art, the above technical solution conceived by the present invention has the following beneficial effects:
1. the invention provides a conductive wire-based gate tube device using a novel material and a novel structure, wherein a layer of two-dimensional material with poor permeability similar to graphene is added between a gate tube functional layer and an electrode on the basis of an original conductive bridge threshold switch device, defects can be generated by using the two-dimensional material, and according to the property that the conductive wire can grow along the defects, the formed conductive wire is thin when the area of the defects is small, so that when excitation applied to the gate tube disappears, the conductive wire is easy to disappear, the gate tube is easy to close, and the switching performance of the gate tube can be improved.
2. The gate tube with the novel material and the structure can prevent the switch layer material from diffusing to the electrode by using the two-dimensional material with poor permeability, and can control the thickness of the conductive wire formed in the switch layer when the gate tube is opened by controlling the size of the surface defect of the two-dimensional material, so that the switching performance of the gate tube is better. For the same two-dimensional material, ion beam bombardment with different degrees of use can generate defects with different sizes, and when the ion beam density is smaller and the bombardment time is shorter, smaller defects can be generated, as shown in fig. 5, and when the ion beam density is larger and the bombardment time is longer, larger defects can be generated, as shown in fig. 4.
3. The gate tube with the novel material and the novel structure can simultaneously realize high on-off ratio and high driving current, inhibit leakage current and reduce power consumption, and has potential application to large-scale arrays, and can provide enough operating current for two-end memory devices including phase change memories, resistive random access memories and two-end magnetic memories.
Drawings
FIG. 1 is a schematic structural diagram of a gate tube device with novel materials and structure proposed by the present invention;
FIG. 2 is a cross-sectional view of a simplified structure of a gate tube device with a two-dimensional material between a first metal electrode layer and a functional layer according to the present invention;
FIG. 3 is a cross-sectional view of a simplified structure of a gate tube device with a two-dimensional material between a second metal electrode layer and a functional layer according to the present invention;
FIG. 4 is a schematic illustration of thicker conductive filaments formed when the two-dimensional material has a larger defect area;
FIG. 5 is a schematic illustration of the formation of thinner conductive filaments when the two-dimensional material defect area is smaller.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other. The present invention will be described in further detail with reference to specific embodiments.
As a preferred embodiment of the present invention, as shown in fig. 1-2, the present invention provides a gate tube with a novel material and structure, which comprises sequentially arranged:
a semiconductor substrate 100;
a first metal electrode layer 101, the first metal electrode layer 101 is prepared on the semiconductor substrate 100, the thickness of the first metal electrode layer 101 is 100-500nm, when the material of the first metal electrode layer 101 is active metal, the material selection is as follows: any one or any combination of AgSx, AgSex, AgTex, CuSx, CuSex and CuTex, or any one or any combination of AgSx, AgSex, AgTex, CuSx, CuSex and CuTex, and doping metal to obtain the product, such as one or more of Cu, Ag and Fe; when the material of the first metal electrode layer 101 is an inert metal, the material is selected from: pt, Ti, W, Au, Ru, Al, TiW, TiN, TaN, IrO2、ITO, IZO;
an electrothermal insulation layer 102, the electrothermal insulation layer 102 is prepared on the bottom electrode, the material of the electrothermal insulation layer 102 is: a mixture of any one or more than two of nitride, oxide or other electric insulating materials, wherein the thickness of the electric heating insulating layer 102 is 100-200nm, one or more small holes are formed in the middle of the electric heating insulating layer 102, and the bottom of each small hole is a first metal electrode layer;
a two-dimensional material layer 103, the two-dimensional material layer 103 is located in the small hole wrapped by the electrothermal insulation layer 102, the two-dimensional material layer 103 is formed between the active metal electrode layer and the switch layer plug post 104, the two-dimensional material layer 103 is a material similar to graphene, which is impermeable and can regulate and control surface defects, and the material can be any one of transition metal chalcogenide compounds such as MoSx, WSx, BN, MoSex, MoTex, WSex, WTex, TiSe2, black phosphorus and the like; for the same two-dimensional material, bombarding the same two-dimensional material by using ion beams, and regulating the size of surface defects by controlling factors including the density of the ion beams and bombardment time;
a switch layer plug 104, the switch layer plug 104 is located in the small hole covered by the electrothermal insulating layer 102, the switch layer plug 104 is formed between the two-dimensional material layer 103 and the inert metal electrode layer, the thickness of the switch layer plug 104 is 10-100nm, the switch layer plug 104 is a material which can form a conductive wire 106 under current or voltage excitation, and the material can be: GeTex, GeSex, GeSx, GeSbTex, GeSbx, GeOx, SbTex, SbS, SbSe, BiSe, BiS, BiTe, AsTe, AsSe, SnTe, BiTe and other sulfur compounds, or GeTex, GeSex, GeSbTex, GeSbx, GeSbOx, SbTex, SbS, SbSe, BiSe, BiS, BiTe, AsTe, AsSe, SnTe, BiTe and other sulfur compounds, and further doping S, N, O and at least one of Si elements to form a mixture;
a second metal electrode layer 105, the second metal electrode layer 105 is prepared on the electric heating insulation layer 102, the bottom of the second metal electrode layer 105 is formed on the top of the gate tube gating layer, the second metal electrode layer 105The thickness is 100-500 nm; when the material of the second metal electrode layer 105 is an active metal, the material is selected from: any one or any combination of AgSx, AgSex, AgTex, CuSx, CuSex and CuTex, or any one or any combination of AgSx, AgSex, AgTex, CuSx, CuSex and CuTex, and doping metal to obtain the product, such as one or more of Cu, Ag and Fe; when the material of the second metal electrode layer 105 is an inert metal, the material is selected from: pt, Ti, W, Au, Ru, Al, TiW, TiN, TaN, IrO2Any one of ITO and IZO.
As another parallel scheme, the phase change is the same as the previous scheme except for the following differences. As shown in fig. 1 and 3, the gate tube with novel material and structure of the invention comprises:
a semiconductor substrate 100;
a first metal electrode layer 101;
an electrothermal insulating layer 102 having a small hole therein, the bottom of the small hole being the first metal electrode layer 101;
a switch layer plug 104, wherein the switch layer plug 104 is formed in the hole wrapped by the electrothermal insulation layer 102, and the bottom of the switch layer plug 104 is formed on the top of the first metal electrode layer 101; the switch layer plug 104 is a material that can form a conductive filament 106 when energized by a current or voltage;
a two-dimensional material layer 103, wherein the two-dimensional material layer 103 is formed in the small hole wrapped by the electrothermal insulation layer 102, and the bottom of the two-dimensional material layer 103 is formed on the top of the switch layer plug column 104; the two-dimensional material layer 103 is a material which is impervious and can regulate and control surface defects;
a second metal electrode layer 105, wherein the second metal electrode layer 105 is formed on top of the electrothermal insulation layer 102 and the two-dimensional material layer 103.
The following description is made by taking specific examples, and the preparation method of the gate tube with the novel material and the structure comprises the following steps:
step 1: preparing a layer of bottom electrode on a silicon substrate with a crystalline phase of <100> and a layer of silicon dioxide on the surface by magnetron sputtering, wherein the thickness of the bottom electrode is 100nm, and the bottom electrode is made of platinum;
step 2: preparing an electrothermal insulating layer on the bottom electrode, wherein the thickness of the electrothermal insulating layer is 100nm, and the material is SiO2；
And step 3: preparing small holes on the electric heating insulating layer by using a micro-nano processing technology, wherein the hole diameter is 50nm, and the depth is 100 nm;
and 4, step 4: filling single-layer MoS into small holes in sequence2And a switching layer material, the switching layer material being HfO2The thickness of the film is 40 nm;
and 5: and photoetching the surface of the electric heating insulating layer, preparing a layer of top electrode on the surface of the electric heating insulating layer, and stripping to obtain the top electrode corresponding to each small hole, wherein the top electrode is made of platinum and has the thickness of 100 nm.
In summary, the present invention provides a conductive wire-based gate tube device using a novel material and structure, based on the original conductive bridge threshold switching device, a layer of two-dimensional material with poor permeability similar to graphene is added between the gate tube functional layer and the electrode, the two-dimensional material can generate defects, and according to the property that the conductive wire can grow along the defects, when the area of the defects is small, the formed conductive wire is thin, so that when the excitation applied to the gate tube disappears, the conductive wire is more easily disappeared, the gate tube is more easily closed, and the performance of the gate tube is greatly improved.
The gate tube with the novel material and the structure can prevent the switch layer material from diffusing to the electrode by using the two-dimensional material with poor permeability, and can control the thickness of the conductive wire formed in the switch layer when the gate tube is opened by controlling the size of the surface defect of the two-dimensional material, so that the switching performance of the gate tube is better. For the same two-dimensional material, ion beam bombardment with different degrees of use can generate defects with different sizes, and when the ion beam density is smaller and the bombardment time is shorter, smaller defects can be generated, as shown in fig. 5, and when the ion beam density is larger and the bombardment time is longer, larger defects can be generated, as shown in fig. 4.
The gate tube with the novel material and the novel structure can simultaneously realize high on-off ratio and high driving current, inhibit leakage current and reduce power consumption, and has potential application to large-scale arrays, and can provide enough operating current for two-end memory devices including phase change memories, resistive random access memories and two-end magnetic memories.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. The utility model provides a gate pipe with novel material and structure which characterized in that, including setting gradually:
a semiconductor substrate (100);
a first metal electrode layer (101);
an electric heating insulating layer (102) with small holes, wherein the bottom of the small hole is provided with the first metal electrode layer (101);
a two-dimensional material layer (103), wherein the two-dimensional material layer (103) is formed in the small hole wrapped by the electrothermal insulation layer (102), and the bottom of the two-dimensional material layer (103) is formed on the top of the first metal electrode layer (101); the two-dimensional material layer (103) is made of a material which is impermeable and can regulate and control surface defects;
a switch layer plug pillar (104), wherein the switch layer plug pillar (104) is formed in the small hole wrapped by the electrothermal insulation layer (102), and the bottom of the switch layer plug pillar (104) is formed on the top of the two-dimensional material layer (103); the switch layer plug posts (104) are materials which can form conductive wires (106) under current or voltage excitation;
a second metal electrode layer (105), the second metal electrode layer (105) being formed on top of the electrothermal insulation layer (102) and the switch layer plug (104).
2. The utility model provides a gate pipe with novel material and structure which characterized in that, including setting gradually:
a semiconductor substrate (100);
a first metal electrode layer (101);
an electric heating insulating layer (102) with small holes, wherein the bottom of the small hole is provided with the first metal electrode layer (101);
a switch layer plug (104), wherein the switch layer plug (104) is formed in the small hole wrapped by the electrothermal insulation layer (102), and the bottom of the switch layer plug (104) is formed on the top of the first metal electrode layer (101); the switch layer plug posts (104) are materials which can form conductive wires (106) under current or voltage excitation;
a two-dimensional material layer (103), wherein the two-dimensional material layer (103) is formed in the small hole wrapped by the electrothermal insulation layer (102), and the bottom of the two-dimensional material layer (103) is formed on the top of the switch layer plug column (104); the two-dimensional material layer (103) is made of a material which is impermeable and can regulate and control surface defects;
a second metal electrode layer (105), wherein the second metal electrode layer (105) is formed on top of the electrothermal insulation layer (102) and the two-dimensional material layer (103).
3. A gate tube with novel material and structure as claimed in any one of claims 1-2, characterized in that:
the two-dimensional material layer (103) is a transition metal chalcogenide compound.
4. A gate tube with novel material and structure as claimed in claim 3, characterized in that:
the material of the two-dimensional material layer (103) is selected from any one of MoSx, WSx, BN, MoSex, MoTex, WSex, WTex, TiSe2 and black phosphorus.
5. A gate tube with novel material and structure as claimed in any one of claims 1-2, characterized in that:
for the same two-dimensional material, ion beam bombardment is used, and the size of the surface defect is adjusted by controlling factors including ion beam density and bombardment time.
6. A gate tube with novel material and structure as claimed in any one of claims 1-2, characterized in that:
the switch layer plug (104) includes a chalcogenide compound.
7. A gate tube with novel material and structure as claimed in any one of claims 1-2, characterized in that:
the switch layer plug column (104) is made of any one or any combination of GeTex, GeSex, GeSx, GeSbTex, GeSbx, GeOx, SbTex, SbS, SbSe, BiSe, BiS, BiTe, AsTe, AsSe, SnTe and BiTe.
8. A gate tube with novel material and structure as claimed in any one of claims 1-2, characterized in that:
the material of the switch layer plug column (104) is selected from any one or any combination of GeTex, GeSex, GeSx, GeSbTex, GeSbSx, SbTex, SbS, SbSe, BiSe, BiS, BiTe, AsTe, AsSe, SnTe and BiTe, and is further doped with S, N, O and a mixture formed by at least one element of Si elements.
9. A gate tube with novel material and structure as claimed in claim 1, characterized in that:
the first metal electrode layer (101) is an active electrode, and the second metal electrode layer (105) is an inert electrode.
10. A gate tube with novel material and structure as claimed in claim 2, characterized in that:
the first metal electrode layer (101) is an inert electrode, and the second metal electrode layer (105) is an active electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911046676.3A CN110993787B (en) | 2019-10-30 | 2019-10-30 | Gate pipe |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911046676.3A CN110993787B (en) | 2019-10-30 | 2019-10-30 | Gate pipe |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110993787A true CN110993787A (en) | 2020-04-10 |
| CN110993787B CN110993787B (en) | 2022-04-29 |
Family
ID=70082778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911046676.3A Active CN110993787B (en) | 2019-10-30 | 2019-10-30 | Gate pipe |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110993787B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110193042A1 (en) * | 2010-02-11 | 2011-08-11 | Steven Maxwell | Memory cell formed using a recess and methods for forming the same |
| US20140353566A1 (en) * | 2013-05-28 | 2014-12-04 | Intermolecular Inc. | ReRAM materials stack for low-operating-power and high-density applications |
| CN105990519A (en) * | 2015-02-05 | 2016-10-05 | 中国科学院微电子研究所 | Nonvolatile resistive random access memory device and preparation method thereof |
| CN205828438U (en) * | 2016-06-03 | 2016-12-21 | 云南师范大学 | A kind of based on hafnium oxide defect regulation and control layer graphene ferroelectric memory |
| CN106711019A (en) * | 2015-11-17 | 2017-05-24 | 中国科学院上海微系统与信息技术研究所 | Method utilizing controllable defective graphene insertion layer to prepare metal-semiconductor alloy |
| CN107431070A (en) * | 2015-03-31 | 2017-12-01 | 索尼半导体解决方案公司 | Switching device and storage device |
| CN109585651A (en) * | 2018-12-17 | 2019-04-05 | 湖北大学 | A kind of flexible double threshold value gating tube device and preparation method thereof |
-
2019
- 2019-10-30 CN CN201911046676.3A patent/CN110993787B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110193042A1 (en) * | 2010-02-11 | 2011-08-11 | Steven Maxwell | Memory cell formed using a recess and methods for forming the same |
| US20140353566A1 (en) * | 2013-05-28 | 2014-12-04 | Intermolecular Inc. | ReRAM materials stack for low-operating-power and high-density applications |
| CN105990519A (en) * | 2015-02-05 | 2016-10-05 | 中国科学院微电子研究所 | Nonvolatile resistive random access memory device and preparation method thereof |
| CN107431070A (en) * | 2015-03-31 | 2017-12-01 | 索尼半导体解决方案公司 | Switching device and storage device |
| CN106711019A (en) * | 2015-11-17 | 2017-05-24 | 中国科学院上海微系统与信息技术研究所 | Method utilizing controllable defective graphene insertion layer to prepare metal-semiconductor alloy |
| CN205828438U (en) * | 2016-06-03 | 2016-12-21 | 云南师范大学 | A kind of based on hafnium oxide defect regulation and control layer graphene ferroelectric memory |
| CN109585651A (en) * | 2018-12-17 | 2019-04-05 | 湖北大学 | A kind of flexible double threshold value gating tube device and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| YU LI等: "Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials", 《SMALL》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110993787B (en) | 2022-04-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107732010B (en) | Gate tube device and preparation method thereof | |
| KR102411185B1 (en) | Ferroelectric Memory Device and Method of Manufacturing the same | |
| CN101419940B (en) | Method for making memory cell assembly and the memory cell assembly | |
| CN103794620B (en) | There are three three dimensional nonvolatile memorizeies for the device driver of row selection | |
| US7759771B2 (en) | Resistance random access memory and method of manufacturing the same | |
| US20160118585A1 (en) | Resistive Switching Devices Having a Switching Layer and an Intermediate Electrode Layer and Methods of Formation Thereof | |
| TWI407608B (en) | Solid-state memory device, data processing system, and data processing device | |
| US7675052B2 (en) | Nonvolatile memory device and fabrication method thereof | |
| TW201042731A (en) | Buried silicide structure and method for making | |
| TW201029239A (en) | Polysilicon pillar bipolar transistor with self-aligned memory element | |
| TW201216539A (en) | Cross-point self-aligned reduced cell size phase change memory | |
| CN104465989B (en) | Three-terminal atom switching device and preparing method thereof | |
| WO2014121618A1 (en) | High-reliability non-volatile memory and preparation method therefor | |
| CN110571330B (en) | Gate tube device, memory unit and preparation method | |
| KR101317755B1 (en) | Nonvolatile memory device having threshold switching resistor, memory array containing the memory device and method for manufacturing the array | |
| CN106992251A (en) | One kind is based on VOxThe phase-change memory cell of gate tube | |
| JP6218388B2 (en) | Self-insulating conductive bridge memory device | |
| CN110931637B (en) | Preparation method of gate tube | |
| CN111029362B (en) | Preparation method of three-dimensional integrated circuit structure of high-density phase change memory | |
| CN113571635A (en) | Gating tube material, gating tube unit, preparation method and memory structure | |
| US20210090626A1 (en) | Integration of epitaxially grown channel selector with two terminal resistive switching memory element | |
| KR20190065980A (en) | Next Generation Non-Volatile Mott Memory Device using Characteristic of Transition Metal Oxides | |
| CN105655481A (en) | Super-dense cross matrix array type magnetic random access memory manufacturing technology | |
| CN110993787B (en) | Gate pipe | |
| CN110911558B (en) | VOx gate tube with novel structure and material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |