CN110993778A - Heat flow sensor based on transverse thermoelectric effect of thin film - Google Patents
Heat flow sensor based on transverse thermoelectric effect of thin film Download PDFInfo
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- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
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- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
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- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
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Abstract
The invention discloses a heat flow sensor based on a film transverse thermoelectric effect, which comprises: metal electrode, heat absorbing coating, inclined epitaxial film, inclined single crystal substrate, heat conducting glue, small hole and metal heat sink. The metal electrode and the heat absorption coating are arranged on the upper surface of the inclined epitaxial film, and the metal electrode is arranged at two ends of the heat absorption coating; the inclined epitaxial film grows on a beveled single crystal substrate, and the beveled single crystal substrate is fixed on the metal heat sink through heat conducting glue; both ends of the metal heat sink are provided with through insulating small holes; and a metal lead welded on the metal electrode penetrates through the metal heat sink through the insulating small hole and is connected with the voltage measuring system, and the metal heat sink is connected with an object to be measured. An included angle exists between the c-axis of the crystal axis of the inclined epitaxial thin film and the normal line. The heat flow sensor can realize heat flow detection through a thin film material, and has high sensitivity and high response speed.
Description
Technical Field
The invention relates to a heat flow sensor, in particular to a heat flow sensor based on a film transverse thermoelectric effect.
Background
Currently, heat flow sensors are used to measure heat flow density, and are important devices for studying heat transfer. The sensing unit of the traditional heat flow sensor mostly adopts a classical thermopile structure, two materials with different series of thermoelectric potentials are connected end to form a unit, the temperature difference at the cold junction and the hot junction is converted into an electric field through the longitudinal thermoelectric effect, the thermal potential difference of the two different materials is utilized, and the direction of the thermoelectric field in the materials is parallel to the direction of the temperature gradient. Wherein the thermal resistance type heat flow sensor is commonly used at present,the response voltage signal of the device has an expression of V-N (S)A-SB) t/k (N is the number of thermocouples, k is the thermal conductivity, t is the thickness of the thermal resistance layer, SAAnd SBThe Seebeck coefficients of two different materials, respectively). It can be seen that increasing the response requires an increase in the number of thermocouples and the thickness of the thermal resistance layer, but this also significantly increases the geometry of the sensitive cell. Because the heat conduction and relaxation processes in the thermal resistance type heat flow sensor both meet the Fourier theorem, the response time tau of the device is in direct proportion to the square of the thickness of the heat resistance layer in the heat flow transmission direction: τ ═ 1.5t2In addition, the thermocouple is composed of two different materials, and the preparation process and the process are complex.
Disclosure of Invention
The invention mainly aims to provide a heat flow sensor based on a film transverse thermoelectric effect, which solves the problems that the existing sensor can realize heat flow detection only by a thermocouple consisting of two materials with different Seebeck coefficients, can realize heat flow detection through one film material, and has high sensitivity and higher response speed.
The invention provides a heat flow sensor based on a film transverse thermoelectric effect, which comprises: metal electrode, heat absorbing coating, inclined epitaxial film, inclined single crystal substrate, heat conducting glue, small hole and metal heat sink.
The metal electrode and the heat absorption coating are both arranged on the upper surface of the inclined epitaxial film, and the metal electrode is fixed at two ends of the heat absorption coating; the inclined epitaxial film grows on a beveled single crystal substrate, and the beveled single crystal substrate is fixed on the metal heat sink through heat conducting glue; both ends of the metal heat sink are provided with through insulating small holes; and a metal lead welded on the metal electrode penetrates through the metal heat sink through the insulating small hole and is connected with the voltage measuring system, and the metal heat sink is connected with an object to be measured.
An included angle exists between the c axis of the crystal axis of the inclined epitaxial film and the normal line, and the included angle is not equal to 0 degree, 90 degrees and S degreeabIs not equal to ScIn the direction perpendicular to the heat flow, there is an electrical signal U, U ═ l (S)ab-Sc) Δ T sin (2 α)/(2d), wherein SabSeebeck coefficient, S, for the ab-plane of a tilted epitaxial filmcIn order to obtain the Seebeck coefficient of the inclined epitaxial film in the c-axis direction, delta T is the temperature difference in the thickness direction of the inclined epitaxial film, d is the thickness of the inclined epitaxial film, l is the irradiation length, and α is the included angle between the c-axis of the crystal axis and the normal line.
Preferably, the tilted epitaxial thin film material is selected from PtCoO2、PbCoO2、Ca0.5CoO2、La0.5Sr0.5CoO3、Ca3Co4O9And YBa2Cu3O7Any one of them.
Preferably, the inclined angles of the beveled single crystal substrate and the inclined epitaxial thin film are both 5 to 45 degrees.
Preferably, the chamfered single crystal substrate comprises: SrTiO with inclination angle of 5-45 degrees3(100)、LaAlO3(100) Or Al2O3(0001)。
Preferably, the film thickness of the inclined epitaxial film is 50-1000 nm.
Preferably, the distance between the metal electrodes at both ends of the heat-absorbing coating is greater than or equal to 1 mm.
Preferably, the material of the metal electrode is selected from Au, Pt or Ag; the metal wire is made of Al, Ag or Au.
Preferably, the heat absorption coating is arranged on the inclined epitaxial film through a surface spraying method or a sputtering method, the absorption rate of the heat absorption coating is greater than or equal to 94%, and the thickness of the heat absorption coating is 1-5 μm.
More preferably, the heat absorbing coating is a heat absorbing paint prepared by a surface spray coating method, or a diamond-like carbon material or TiN grown by a magnetron sputtering method.
Preferably, the metal heat sink is made of Cu or Mo or anodized aluminum, and the thickness of the metal heat sink is 2-10 mm; when the thickness of the metal heat sink (8) is 5-10 mm, threads are circumferentially arranged on the outer wall of the metal heat sink and are connected with the object to be detected through the threads.
The heat flow sensor solves the problem that the existing sensor can realize heat flow detection only by forming the thermocouple by two materials with different Seebeck coefficients, and has the following advantages:
(1) the heat flow sensor of the invention only needs one film material, and can realize heat flow detection through one film material, while the existing sensor needs two materials with different Seebeck coefficients to form a thermocouple;
(2) according to the heat flow sensor, the minimum thickness of the whole device can be 2.3mm, the minimum area of the device can be 5mm x 5mm, the interference of the size to a heat flow environment is very small, and the fluency of gas around an object to be measured (such as an aircraft) cannot be influenced, so that the possibility of accurately measuring the heat flow in a special environment is provided;
(3) the thickness of the film of the heat flow sensor is in a nanometer scale, and the heat capacity is small, so that the quick response speed can be realized, and meanwhile, the length of the film in the inclined direction is increased, and the high detection sensitivity is realized;
(4) the metal heat sink can also adopt a cylindrical structure, and the periphery of the cylinder is subjected to surface thread treatment, so that the metal heat sink can be connected with the wall surface of an object to be detected (such as an engine and the like), the tight connection can be ensured, and the shock resistance and vibration resistance of a device are improved;
(5) the sensitivity of the heat flow sensor can reach 221 mu V cm2The response time can reach 20ms, and the linearity rate is higher than 99.5%.
Drawings
Fig. 1 is a schematic structural diagram of a heat flow sensor based on a thin film transverse thermoelectric effect according to the present invention.
FIG. 2 is a static calibration result chart of the heat flow sensor of the present invention under high temperature black body irradiation.
Reference numerals: 1 is a metal electrode; 2 is a heat absorbing coating; 3 is a tilted epitaxial film; 4 is a beveled monocrystalline substrate; 5 is a metal wire; 6 is heat-conducting glue; 7 is an insulating small hole; and 8 is a metal heat sink.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
A thermal flow sensor based on the lateral thermoelectric effect of thin films, see fig. 1, comprising: the device comprises a metal electrode 1, a heat absorption coating 2, an inclined epitaxial film 3, a beveled monocrystalline substrate 4, heat conducting glue 6, small holes 7 and a metal heat sink 8.
The metal electrode 1 and the heat absorption coating 2 are both arranged on the upper surface of the inclined epitaxial film 3, and the metal electrode 1 is fixed at two ends of the heat absorption coating 2; the inclined epitaxial film 3 grows on a beveled monocrystalline substrate 4, and the beveled monocrystalline substrate 4 is fixed on a metal heat sink 8 through a heat-conducting glue 6; both ends of the metal heat sink 8 are provided with through insulating small holes 7; the metal lead 5 welded on the metal electrode 1 penetrates through the metal heat sink 8 through the insulating small hole 7 and is connected with the voltage measuring system, and the metal heat sink 8 is connected with an object to be measured.
An included angle exists between the c axis of the crystal axis of the inclined epitaxial thin film 3 and the normal line, and the included angle is not equal to 0 degrees, 90 degrees and SabIs not equal to ScIn the direction perpendicular to the heat flow, there is an electrical signal U, U ═ l (S)ab-Sc) Δ T sin (2 α)/(2d), wherein SabSeebeck coefficient, S, for the ab-plane of a tilted epitaxial filmcIn order to obtain the Seebeck coefficient of the inclined epitaxial film in the c-axis direction, delta T is the temperature difference in the thickness direction of the inclined epitaxial film, d is the thickness of the inclined epitaxial film, l is the irradiation length, and α is the included angle between the c-axis of the crystal axis and the normal line.
The heat flow sensor only needs one film material, and can realize heat flow detection through one film material, while the existing sensor needs two materials with different Seebeck coefficients to form a thermocouple. When the film with obvious anisotropy is obliquely grown, the thermal field generates a temperature gradient along the thickness direction of the film, and a voltage signal is measured on the upper surface of the film along the horizontal direction (vertical to the direction of the thermal field).
Further, the material of the inclined epitaxial thin film 3 is selected from PtCoO2、PbCoO2、Ca0.5CoO2、La0.5Sr0.5CoO3、Ca3Co4O9And YBa2Cu3O7Any one of them.
Further, the tilt angles (i.e., the angle α between the c-axis of the crystal axis and the normal) of the obliquely-cut single crystal substrate 4 and the tilted epitaxial thin film 3 are each 5 ° to 45 °.
Further, the chamfered single crystal substrate 4 includes: SrTiO with inclination angle of 5-45 degrees3(100)、LaAlO3(100) Or Al2O3(0001)。
Further, the film thickness of the inclined epitaxial film 3 is 50 to 1000 nm.
Further, the distance between the metal electrodes 1 at both ends of the heat absorption coating layer 2 is greater than or equal to 1 mm.
Further, the material of the metal electrode 1 is selected from Au, Pt or Ag; the material of the metal wire 5 is selected from Al, Ag or Au.
Further, the heat absorption coating 2 is arranged on the inclined epitaxial thin film 3 through a surface spraying method or a sputtering method, the absorption rate of the heat absorption coating 2 is greater than or equal to 94%, and the thickness of the heat absorption coating is 1-5 mu m.
Further, the heat absorbing coating 2 is a heat absorbing paint prepared by a surface spray method, or a diamond-like carbon material or TiN grown by a magnetron sputtering method.
Furthermore, the metal heat sink 8 is made of Cu or Mo or anodized aluminum, the thickness of the metal heat sink 8 is 2-10 mm, threads are circumferentially arranged on the outer wall of the metal heat sink 8, and wall connection with an object to be detected (such as an engine) is achieved through the threads. More specifically, the thickness of the metal heat sink 8 can be set to be different, when the thickness of the heat sink is 2mm, the thickness of the whole heat flow sensor can be about 2.3mm, and the influence of the ultrathin heat flow sensor on the heat flow environment around the object to be measured is very small. When the thickness of the heat sink is 5-10 mm, the surface of the metal heat sink is processed by a thread structure, so that the metal heat sink can be connected with the wall surface of an object to be tested, tight connection can be ensured, and the shock resistance and vibration resistance of the device can be improved.
Furthermore, the diameter of the insulating small hole 7 is 0.2-1 mm. The inner wall of the insulating small hole 7 is subjected to insulating treatment.
As shown in FIG. 2, it is a static calibration result chart of the heat flow sensor of the present invention under high temperature black body irradiation, and the adopted thin film material is YBa2Cu3O7The film is prepared by using a standard high-temperature black body as a heat source and has five calibrated heat flux densities of 0.620Wcm-2、1.667Wcm-2、3.762Wcm-2、6.269Wcm-2、8.579Wcm-2From FIG. 2, it can be derived that the responsivity of the device is 221 μ Vcm2and/W, the linearity of the device is good.
The working principle of the heat flow sensor based on the transverse thermoelectric effect of the film is as follows:
based on the transverse thermoelectric effect of the inclined epitaxial film, namely when the surface of the film is thermally irradiated by a heat irradiation source, a temperature gradient is generated on the upper surface and the lower surface of the film, and a voltage signal is generated in the horizontal direction (vertical to the temperature gradient) due to the transverse thermoelectric effect, wherein U is l (S)ab-Sc) Δ T sin (2 α)/(2d), wherein SabSeebeck coefficient, S, for the ab-plane of a tilted epitaxial filmcThe Seebeck coefficient of the inclined epitaxial film in the c-axis direction is shown, delta T is the temperature difference in the thickness direction of the inclined epitaxial film, d is the thickness of the inclined epitaxial film, l is the irradiation length, and α is the included angle between the c-axis of the crystal axis and the normal line.
The thickness of the whole heat flow sensor can be 2.3mm at minimum (wherein, the thickness of the whole heat flow sensor comprises a metal heat sink 8 with the thickness of 2mm, a beveled single crystal substrate 4 with the thickness of 0.2mm, an inclined epitaxial film 3 with the thickness of 0.000052mm, a heat absorption coating 2 with the thickness of 0.001mm and a heat conduction glue 6 with the thickness of 0.8 mm), and the minimum area of the device can be 5mm x 5mm (wherein, the dimensions of the beveled single crystal substrate 4 and the inclined epitaxial film 3 are 3mm x 3mm, and the dimension of the metal heat sink 8 is 5mm x 5 mm). The interference of the size of 5mm x 5mm x 2.3mm to the heat flow environment is very small, and the gas fluency around the object to be measured (such as an aircraft) is not influenced, so that the possibility of accurately measuring the heat flow in the special environment is provided.
The thickness of the inclined epitaxial film of the heat flow sensor is in a nanometer scale, and the heat capacity is small, so that the quick response speed can be realized. Meanwhile, increasing the length of the film in the oblique direction (irradiation length) realizes a large detection sensitivity, thereby realizing both a large sensitivity and a fast response speed.
According to an embodiment of the present application, the thin film material is YBa2Cu3O7A thin film with an inclination angle of 15 DEG is grown on LaAlO3The spacing between the electrodes on the substrate was 4 mm. The heat flow sensor of the application has the sensitivity of 221 mu V cm2The response time is 20ms, and the linearity is higher than 99.5%.
In conclusion, the heat flow sensor has the advantages of high sensitivity, good linearity, small size, simple structure and the like.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (10)
1. A thermal flow sensor based on the lateral thermoelectric effect of a thin film, the thermal flow sensor comprising: the device comprises a metal electrode (1), a heat absorption coating (2), an inclined epitaxial film (3), a beveled monocrystalline substrate (4), heat-conducting glue (6), small holes (7) and a metal heat sink (8);
the metal electrode (1) and the heat absorption coating (2) are arranged on the upper surface of the inclined epitaxial film (3), and the metal electrode (1) is fixed at two ends of the heat absorption coating (2); the inclined epitaxial film (3) grows on a beveled monocrystalline substrate (4), and the beveled monocrystalline substrate (4) is fixed on a metal heat sink (8) through a heat conducting glue (6); both ends of the metal heat sink (8) are provided with through insulating small holes (7); a metal lead (5) welded on the metal electrode (1) penetrates through a metal heat sink (8) through an insulating small hole (7) and is connected with a voltage measuring system, and the metal heat sink (8) is connected with an object to be measured;
the above-mentionedAn included angle exists between the c axis of the crystal axis of the inclined epitaxial thin film (3) and the normal line, and the included angle is not equal to 0 degrees, 90 degrees and SabIs not equal to ScIn the direction perpendicular to the heat flow, there is an electrical signal U, U ═ l (S)ab-Sc) Δ T sin (2 α)/(2d), wherein SabSeebeck coefficient, S, for the ab-plane of a tilted epitaxial filmcIn order to obtain the Seebeck coefficient of the inclined epitaxial film in the c-axis direction, delta T is the temperature difference in the thickness direction of the inclined epitaxial film, d is the thickness of the inclined epitaxial film, l is the irradiation length, and α is the included angle between the c-axis of the crystal axis and the normal line.
2. Heat flow sensor based on the thin film lateral thermoelectric effect, according to claim 1, characterized in that the tilted epitaxial thin film (3) material is selected from PtCoO2、PbCoO2、Ca0.5CoO2、La0.5Sr0.5CoO3、Ca3Co4O9And YBa2Cu3O7Any one of them.
3. The heat flow sensor based on thin film lateral thermoelectric effect according to claim 1, characterized in that the off-cut monocrystalline substrate (4) and the inclined epitaxial thin film (3) have an inclination angle of 5 ° to 45 ° each.
4. Heat flow sensor based on the thin film lateral thermoelectric effect according to any of the claims 1-3, characterized in that the chamfered monocrystalline substrate (4) comprises: SrTiO with inclination angle of 5-45 degrees3(100)、LaAlO3(100) Or Al2O3(0001)。
5. The heat flow sensor based on thin film lateral thermoelectric effect according to claim 4, characterized in that the inclined epitaxial thin film (3) has a film thickness of 50-1000 nm.
6. Heat flow sensor based on thin film transverse thermoelectric effect according to claim 1, characterized in that the distance between the metal electrodes (1) at both ends of the heat absorbing coating (2) is greater than or equal to 1 mm.
7. Heat flow sensor based on thin film lateral thermoelectric effect according to claim 1, characterized in that the material of the metal electrodes (1) is selected from Au, Pt or Ag; the metal wire (5) is made of Al, Ag or Au.
8. The heat flow sensor based on the transverse thermoelectric effect of thin films according to claim 1, characterized in that the heat-absorbing coating (2) is provided on the inclined epitaxial thin film (3) by surface spraying or sputtering, the absorptivity of the heat-absorbing coating (2) is greater than or equal to 94% and the thickness is 1-5 μm.
9. Heat flow sensor based on thin film transverse thermoelectric effect according to claim 8, characterized in that the heat absorbing coating (2) is a heat absorbing paint prepared by surface spray method or diamond like carbon material grown by magnetron sputtering method or TiN.
10. The heat flow sensor based on the thin film transverse thermoelectric effect according to claim 1, wherein the material of the metal heat sink (8) is Cu or Mo or anodized aluminum, and the thickness of the metal heat sink (8) is 2-10 mm; when the thickness of the metal heat sink (8) is 5-10 mm, threads are arranged on the circumferential direction of the outer wall of the metal heat sink (8) and are connected with the object to be detected through the threads.
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Cited By (6)
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| CN111579126A (en) * | 2020-06-04 | 2020-08-25 | 西南科技大学 | High-temperature heat flow sensor |
| CN114136501A (en) * | 2021-11-26 | 2022-03-04 | 山东大学 | Thin film type heat flow sensor structure and metal electrode preparation method thereof |
| CN114659657A (en) * | 2022-03-28 | 2022-06-24 | 电子科技大学 | Method for preparing film heat flow sensor with laminated structure |
| US11879786B1 (en) | 2022-12-26 | 2024-01-23 | Shandong University | Heat flux sensor |
| CN117470413A (en) * | 2023-12-27 | 2024-01-30 | 山东大学 | Film type heat flow sensor and preparation method thereof |
| CN117558801A (en) * | 2024-01-11 | 2024-02-13 | 山东大学 | Photoelectric detector based on transverse Danfold effect and preparation method thereof |
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| CN114136501A (en) * | 2021-11-26 | 2022-03-04 | 山东大学 | Thin film type heat flow sensor structure and metal electrode preparation method thereof |
| CN114659657A (en) * | 2022-03-28 | 2022-06-24 | 电子科技大学 | Method for preparing film heat flow sensor with laminated structure |
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| CN117470413A (en) * | 2023-12-27 | 2024-01-30 | 山东大学 | Film type heat flow sensor and preparation method thereof |
| CN117470413B (en) * | 2023-12-27 | 2024-03-29 | 山东大学 | Film type heat flow sensor and preparation method thereof |
| CN117558801A (en) * | 2024-01-11 | 2024-02-13 | 山东大学 | Photoelectric detector based on transverse Danfold effect and preparation method thereof |
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