CN110983410A - Nano-alumina hole and graphene multilayer wave-absorbing device - Google Patents
Nano-alumina hole and graphene multilayer wave-absorbing device Download PDFInfo
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- CN110983410A CN110983410A CN201911154151.1A CN201911154151A CN110983410A CN 110983410 A CN110983410 A CN 110983410A CN 201911154151 A CN201911154151 A CN 201911154151A CN 110983410 A CN110983410 A CN 110983410A
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- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
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Abstract
A nano-alumina hole and graphene multilayer wave-absorbing device for realizing efficient wave absorption of visible light and near-infrared wave bands. The wave absorbing device is a multilayer structure of a nano alumina hole array, graphene and a metal substrate, wherein nano alumina holes are arranged in a hexagonal shape, the radius of each nano hole is r, the central distance between every two adjacent nano holes is a, and the thickness of each nano hole layer is d1The thickness of the graphene layer is d2The thickness of the metal substrate is d3. The structure can realize low-reflection and non-transmission visible light and near-infrared band efficient broadband wave absorption. The device can be prepared by a secondary anodic oxidation and chemical vapor deposition method, the adjustment and control of the nanopore structure parameters can be realized by changing the intensity of applied voltage and the processing duration, and the adjustment and control of the graphene layer thickness can be realized by changing the hydrogen flow rate. The invention is in the fields of stealth materials, solar energy utilization and the likeHas important application value.
Description
Technical Field
The invention belongs to the field of micro-nano optics, relates to optical field regulation and electrochemical corrosion, and particularly relates to a nano-alumina hole and graphene multilayer wave-absorbing device capable of realizing low-reflection and non-transmission visible light and near-infrared band efficient wave absorption.
Background
The application of the wave-absorbing material comprises military application such as stealth material and electromagnetic compatibility, and civil application such as safety protection and sensing. In practical application, besides the requirement on the wave-absorbing performance of the wave-absorbing material, the material is required to have good physicochemical properties, and the requirements can be summarized as ' thin, light, wide and strong ', wherein ' thin ' is the requirement on the thickness, wide ' is the requirement on the working frequency band, light ' is the requirement on the density, and strong ' is the requirement on the mechanical property, the environmental adaptability, the physicochemical property and the like of the wave-absorbing material. In order to meet the performance requirements of modern science and technology on wave-absorbing materials, researchers design various wave-absorbing materials such as artificial electromagnetic wave-absorbing materials, photonic crystal wave-absorbing materials and the like, but the wave-absorbing materials in visible light and near infrared wave bands have micron or even nanometer-scale structural units, are high in preparation cost and easy to damage, and are difficult to prepare and apply on a large scale. The metal oxide nano-pores have the characteristics of corrosion resistance, low cost, easiness in large-scale preparation and the like, have the optical characteristics of high scattering and no transmission, and have the potential of being applied to wave-absorbing materials. On the basis of the metal oxide nano-pores, the nano high-efficiency wave-absorbing layer is matched, so that the absorption efficiency and the wave-absorbing bandwidth of the nano high-efficiency wave-absorbing layer can be greatly improved, and the nano high-efficiency wave-absorbing layer has the conditions of being applied to the field of visible light and near-infrared band wave-absorbing devices.
In conclusion, a nano-alumina hole and graphene multilayer wave-absorbing device for realizing efficient wave absorption in visible light and near-infrared bands is provided. The wave absorbing device is a multilayer structure of a nano alumina hole array, graphene and a metal substrate, wherein nano alumina holes are arranged in a hexagon shape. The structure can realize low-reflection and non-transmission visible light and near-infrared band high-efficiency broadband wave absorption, wherein the nano alumina pore layer is a reinforced scattering absorption layer, the graphene layer is a high-efficiency absorption layer, the metal substrate is a strong reflection layer to prevent transmission, and incident light is reflected, scattered and absorbed for many times in a three-layer structure, so that the device has the characteristic of high-efficiency broadband wave absorption. The device can be prepared by a secondary anodic oxidation and chemical vapor deposition method, the adjustment and control of the nanopore structure parameters can be realized by changing the intensity of applied voltage and the processing duration, and the adjustment and control of the graphene layer thickness can be realized by changing the hydrogen flow rate. The invention has important application value in the fields of stealth materials, solar energy utilization and the like.
Disclosure of Invention
The invention provides a nano-alumina pore and graphene multi-component material capable of realizing low-reflection and non-transmission visible light and near-infrared band efficient wave absorptionA layer wave absorbing device. The wave absorbing device is a multilayer structure of a nano alumina hole array, graphene and a metal substrate, wherein nano alumina holes are arranged in a hexagonal shape, the radius of each nano hole is r, the central distance between every two adjacent nano holes is a, and the thickness of each nano hole layer is d1The thickness of the graphene layer is d2The thickness of the metal substrate is d3。
The structure can realize low-reflection and non-transmission visible light and near-infrared band high-efficiency broadband wave absorption, wherein the nano alumina pore layer is a reinforced scattering absorption layer, the graphene layer is a high-efficiency absorption layer, the metal substrate is a strong reflection layer to prevent transmission, and incident light is reflected, scattered and absorbed for many times in a three-layer structure, so that the device has the characteristic of high-efficiency broadband wave absorption. The device can be prepared by a secondary anodic oxidation and chemical vapor deposition method, the adjustment and control of the nanopore structure parameters can be realized by changing the intensity of applied voltage and the processing duration, and the adjustment and control of the graphene layer thickness can be realized by changing the hydrogen flow rate. The invention has important application value in the fields of stealth materials, solar energy utilization and the like.
The invention has the advantages and positive effects that:
the nano-alumina hole and graphene multilayer wave-absorbing device is a multilayer structure of a nano-alumina hole array, graphene and a metal substrate, can realize low-reflection and zero-transmission visible light and near-infrared band efficient broadband wave absorption, wherein the nano-alumina hole layer is a scattering-enhanced absorption layer, the graphene layer is an efficient absorption layer, the metal substrate is a strong reflection layer to prevent transmission, and incident light is reflected, scattered and absorbed for many times in a three-layer structure, so that the device has the characteristic of efficient broadband wave absorption, the multilayer structure has complementary advantages and definite functions. In addition, the novel nano alumina pore wave-absorbing device can be prepared on a large scale at low cost by utilizing a secondary anodic oxidation and chemical vapor deposition method, the structural parameters of the nano pores can be regulated and controlled by changing the intensity of applied voltage and the length of processing time, and the thickness of the graphene layer can be regulated and controlled by changing the flow rate of hydrogen. The invention meets the requirements of miniaturization, integration and functionalization of wave absorption devices of modern optics and has important application value in the fields of stealth materials, solar energy utilization and the like.
Drawings
Fig. 1 is a schematic structural diagram of a nano-alumina hole and graphene multilayer wave-absorbing device capable of realizing low-reflection and non-transmission visible light and near-infrared band efficient broadband wave absorption. Wherein: (a) is a schematic diagram of a three-layer structure of an alumina nanopore array layer, graphene and a metal substrate; (b) is a structural schematic diagram of a nano alumina pore array.
FIG. 2 shows reflection, transmission and wave-absorbing characteristics of the nano-alumina pores and the graphene multilayer wave-absorbing device.
Detailed Description
Example 1
As shown in fig. 1, the nano-alumina pore and graphene multilayer wave-absorbing device provided by the invention is a multilayer structure of a nano-alumina pore array, graphene and a metal substrate, wherein nano-alumina pores are arranged in a hexagon, the radius of each nano-pore is r, the central distance between adjacent nano-pores is a, and the thickness of each nano-pore layer is d1The thickness of the graphene layer is d2The thickness of the metal substrate is d3。
The device can be prepared by secondary anodic oxidation and chemical vapor deposition. The specific method comprises the following steps:
(1) preparing an alumina nano-pore array film, annealing high-purity aluminum, performing electrochemical polishing, putting the polished aluminum into an electrochemical pool containing acid, selecting proper voltage and temperature under a certain solution condition, performing first anodization to form porous alumina with random pore growth directions and hexagonal base distribution, removing the formed porous alumina layer, leaving a regular etching structure on an aluminum substrate, performing second anodization to form regular porous alumina, and performing reduction reaction by using a reverse polarity voltage method to make the alumina film fall off;
(2) preparing few-layer graphene, thermally cracking a carbon-containing precursor on a metal substrate under the catalysis of a transition metal to form a carbon free radical, migrating the carbon free radical on the surface of a catalyst or diffusing and dissolving the carbon free radical into the catalyst, and separating out the carbon free radical from the catalyst in the cooling process or directly nucleating the carbon free radical on the surface of the catalyst and performing two-dimensional reconstruction to form a few-layer graphene film;
(3) placing the stripped alumina nanopore film in distilled water, dripping the alumina nanopore film on the few-layer graphene film by using a dropper, and finishing the attachment after the liquid is evaporated;
(4) and adjusting a preparation scheme according to the characterization result, changing the strength of the applied voltage and the processing time to realize the regulation and control of the structural parameters of the nanopore, and changing the hydrogen flow rate to realize the regulation and control of the thickness of the graphene layer.
Specific application example 1
The specific parameters of the nano-alumina hole and graphene multilayer wave-absorbing device are as follows:
the wave absorbing device is a multilayer structure of a nano alumina hole array, graphene and a metal substrate, wherein nano alumina holes are arranged in a hexagon, the radius of each nano hole is 300nm, the central distance between every two adjacent nano holes is 800nm, and the thickness of each nano hole layer is d1200nm graphene layer thickness d2200nm, metal substrate thickness d 31 mm. The working wave band is visible light and near infrared wave band, and the wavelength range is 300nm to 1000 nm.
FIG. 2 shows reflection, transmission and wave-absorbing characteristics of the nano-alumina pores and the graphene multilayer wave-absorbing device. When the wavelength range is 300nm to 1000nm, the transmittance is almost 0; when the wavelength ranges from 321nm to 413nm and 482nm to 980nm, the reflectivity is lower than 20 percent, and the absorptivity is higher than 80 percent; at wavelengths of 350nm, 543nm, 640nm, 761nm, 872nm, the absorbances have peaks exceeding 90%, 0.9234, 0.9702, 0.9977, 0.9456, 0.9893 respectively. The wavelength range of more than 80 percent of the absorption rate is 321nm-414nm and 482nm-980nm, and the relative bandwidth can reach 68 percent at most. In summary, the nano-alumina hole and graphene multilayer wave-absorbing device can realize low-reflection and non-transmission visible light and near-infrared band efficient broadband wave absorption.
Claims (3)
1. A nano-alumina hole and graphene multilayer wave-absorbing device for realizing efficient wave absorption of visible light and near-infrared wave bands. The wave absorbing device is a multilayer structure of a nano alumina pore array, graphene and a metal substrate, wherein the nano alumina pore array is nanoThe alumina pores are arranged in a hexagon, the radius of each nanopore is r, the central distance between adjacent nanopores is a, and the thickness of each nanopore layer is d1The thickness of the graphene layer is d2The thickness of the metal substrate is d3。
2. The nano-alumina hole and graphene multilayer wave-absorbing device according to claim 1, characterized in that the structure can realize low reflection, non-transmission visible light, near-infrared band high-efficiency broadband wave-absorbing.
3. The nano-alumina pore and graphene multilayer wave-absorbing device according to claim 1 or 2, characterized in that the device can be prepared by a secondary anodic oxidation and chemical vapor deposition method, the adjustment and control of the structural parameters of the nano-pores can be realized by changing the intensity of applied voltage and the processing time, and the adjustment and control of the thickness of the graphene layer can be realized by changing the hydrogen flow rate.
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Cited By (3)
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| CN114050420A (en) * | 2021-11-29 | 2022-02-15 | 南京航空航天大学 | Heat dissipation-wave absorption integrated passive frequency selective surface wave absorber |
| CN115921254A (en) * | 2023-01-06 | 2023-04-07 | 中国航空制造技术研究院 | Laser broadband stealth structure of aircraft surface radar, preparation method and application |
| CN116106997A (en) * | 2022-12-31 | 2023-05-12 | 南京大学 | Plasmon absorption device and preparation method thereof |
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| CN116106997A (en) * | 2022-12-31 | 2023-05-12 | 南京大学 | Plasmon absorption device and preparation method thereof |
| CN115921254A (en) * | 2023-01-06 | 2023-04-07 | 中国航空制造技术研究院 | Laser broadband stealth structure of aircraft surface radar, preparation method and application |
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