CN110983298A - Sample table structure for microwave plasma chemical vapor deposition device - Google Patents
Sample table structure for microwave plasma chemical vapor deposition device Download PDFInfo
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- CN110983298A CN110983298A CN201911354430.2A CN201911354430A CN110983298A CN 110983298 A CN110983298 A CN 110983298A CN 201911354430 A CN201911354430 A CN 201911354430A CN 110983298 A CN110983298 A CN 110983298A
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- sample
- curved surface
- sample stage
- vapor deposition
- chemical vapor
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
A sample stage for a microwave plasma chemical vapor deposition device is characterized in that the sample stage is of a cylindrical structure, the upper surface of the sample stage is provided with a concave curved surface, and the concave curved surface is provided with at least one groove for placing a substrate or a substrate tray required by chemical vapor deposition. The upper surface of the sample table is a concave curved surface, or the central position of the upper surface of the sample table is a concave curved surface and the outer edge position of the upper surface is a plane. The upper surface of the sample table provided by the invention adopts a curved surface design, and the problems of high electric field intensity at the middle position of the sample table and low electric field intensity at the edge are solved. When multiple samples are grown in the microwave plasma chemical vapor deposition reaction cavity, the electric field around each sample and the uniformity of plasma distribution can be effectively improved, so that each sample can grow at a uniform rate, the growth quality of materials in the growth process of the multiple samples is improved, and the microwave power utilization rate is improved.
Description
Technical Field
The invention relates to the field of supporting devices and material growth, in particular to a sample table structure for a microwave plasma chemical vapor deposition device.
Background
The diamond integrates excellent performances of heat, mechanics, optics, electricity and the like, and has the advantages of good heat conductivity, small thermal expansion coefficient, high hardness, wide forbidden bandwidth, high carrier mobility, high saturated electron drift velocity, high breakdown electric field, low dielectric constant and the like. Therefore, the semiconductor device made of diamond is especially suitable for working under the conditions of high temperature, high frequency, high power, strong radiation and the like. Meanwhile, due to the excellent performance of the diamond, the diamond has wide application prospect in various fields of modern technology.
The Microwave Plasma Chemical Vapor Deposition (MPCVD) method is currently the most preferred method for high quality diamond material growth due to its characteristics of low contamination, high Plasma density, convenient control of operating parameters, etc.
During microwave plasma chemical vapor deposition, there are numerous parameters that affect the growth of the material. The geometric structure of the sample stage for placing the sample plays an important role in the distribution of the electric field and the plasma near the sample.
The reaction chamber of the current microwave plasma chemical vapor deposition apparatus is cylindrical or ellipsoidal, so the electric field and plasma distribution above the deposition table in the reaction chamber are both hemispherical or semi-ellipsoidal, as shown in fig. 1 (a). On a sample stage with a plane upper surface, the electric field is generally stronger closer to the central position and gradually weaker away from the central position. This causes the electric field distribution at each sample position to be uneven when multi-substrate growth is performed. The difference between the thickness of the sample placed on the outer side and the thickness of the sample at the center position is larger as the growth time is longer. This is also a waste of microwave power to some extent. If the sample platform is made into a curved surface shape, as shown in fig. 1(b), the microwave electric field distribution can be more uniform, and the utilization rate of the microwave power can be obviously improved.
Disclosure of Invention
Technical problem to be solved
The invention mainly aims to provide a sample table structure for a microwave plasma chemical vapor deposition device, so as to improve the distribution uniformity of plasmas near each sample in a microwave plasma chemical vapor deposition reaction cavity, improve the growth quality of materials and improve the utilization rate of microwave power.
(II) technical scheme
A sample stage for a microwave plasma chemical vapor deposition device is characterized in that the sample stage is of a cylindrical structure, the upper surface of the sample stage is provided with a concave curved surface, and the concave curved surface is provided with at least one groove for placing a substrate or a substrate tray required by chemical vapor deposition.
In the above aspect, the concave curved surface is entirely symmetrical about the axis of the cylindrical structure.
In the scheme, the depth of the concave curved surface is 1cm to 10 cm.
In the above scheme, all the upper surface of the sample stage is a concave curved surface, or the central position of the upper surface of the sample stage is a concave curved surface and the outer edge position of the upper surface is a plane.
The concave curved surface is provided with a central groove at the central position, and the concave curved surface is also provided with grooves or steps which are distributed regularly in the circumferential direction around the central groove.
Wherein, the groove is a cylindrical groove, the diameter of the groove is 0.5cm to 10cm, and the depth of the groove is 0.1cm to 5 cm.
Wherein, the height of the step relative to the bottom surface is gradually increased along with the increase of the distance between the step and the central groove, and the ratio of the height of the step to the thickness of the sample or the sample table is between 1: 1 and 50: 1.
(III) advantageous effects
1. According to the sample table structure provided by the invention, the curved surface design is adopted on the upper surface, so that the problems of high electric field intensity at the middle position and low electric field intensity at the edge of the sample table are solved. When multi-sample growth is carried out in the MPCVD reaction cavity, the uniformity of the distribution of the electric field and the plasma around each sample is effectively improved, so that each sample can grow at a uniform rate, and the growth quality of the material in the multi-sample growth process is improved. Meanwhile, the upper surface of the sample table is designed in a curved surface shape, the problems that the electric field around the sample at the edge of the deposition table is weak and the plasma density is low when multiple samples grow in the microwave plasma chemical vapor deposition process are solved, and the utilization rate of microwave power during deposition of the multiple samples in the MPCVD reaction chamber is effectively improved.
2. The sample stage structure provided by the invention is convenient for placing a substrate sample by arranging the groove or the step in the upper surface.
3. The sample table structure provided by the invention is independent of the reaction cavity and the deposition table, and has the advantages of independent size adjustment, simplicity and easiness in use. The size of the sample table, the groove and the step can be adjusted to be suitable for growth and preparation of sample materials with different sizes and different quantities.
4. The sample table with the sample table structure provided by the invention can be suitable for different types of MPCVD reaction chambers. Is suitable for growing high-quality, large-area and multi-sample thin film materials in different MPCVD reaction devices.
Drawings
FIG. 1(a) is a schematic diagram of the distribution of microwave electric field above a sample stage with a planar surface in the prior art;
FIG. 1(b) is a schematic diagram of the microwave electric field distribution above the sample stage having a curved surface according to the present invention;
FIG. 2(a) is a perspective view of a sample stage with a completely curved top surface according to an embodiment of the present invention;
FIG. 2(b) is a schematic cross-sectional view of a sample stage with a top surface that is completely curved according to an embodiment of the present invention;
FIG. 2(c) is a diagram illustrating the effect of placing a sample on a sample stage having a completely curved upper surface according to an embodiment of the present invention;
FIG. 3(a) is a perspective view of a sample stage with a curved central position and a flat outer ring position on the upper surface according to an embodiment of the present invention;
FIG. 3(b) is a schematic cross-sectional view of a sample stage according to an embodiment of the present invention, wherein the center of the upper surface is a curved surface and the outer ring is a flat surface;
FIG. 3(c) is a diagram illustrating the effect of placing a sample on a sample stage having a curved central position and a flat outer ring position;
FIG. 4(a) is a perspective view of a sample stage with the inner concave groove of the curved surface adjusted according to the sample size according to an embodiment of the invention;
FIG. 4(b) is a schematic cross-sectional view of a sample stage after the size of the concave groove in the curved surface is adjusted according to the size of the sample according to an embodiment of the present invention;
FIG. 4(c) is a diagram illustrating the effect of placing a sample on a sample stage after the size of the concave groove in the curved surface is adjusted according to the size of the sample according to the embodiment of the invention;
FIG. 5(a) is a perspective view of a sample stage stepped within a curved surface according to an embodiment of the present invention;
FIG. 5(b) is a schematic cross-sectional view of a sample stage stepped within a curved surface according to an embodiment of the present invention;
fig. 5(c) is an effect diagram of placing the sample stage on the sample stage having a step shape in the curved surface according to the embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to specific embodiments and the accompanying drawings.
The invention provides a sample stage for a microwave plasma chemical vapor deposition device, which is arranged on a deposition stage in a reaction chamber and is used for placing a substrate or a substrate tray required by chemical vapor deposition. The sample stage is of a cylindrical structure, the upper surface of the sample stage is provided with a concave curved surface, and the concave curved surface is provided with at least one groove for placing a substrate or a substrate tray required by chemical vapor deposition. The substrate or the substrate tray is arranged in the groove, so that the substrate or the substrate tray can be prevented from sliding off.
The whole concave curved surface is symmetrical about the axis of the cylindrical structure, the depth of the concave curved surface is between 1cm and 10cm, and the specific structure of the upper surface of the sample table can be one of the following two conditions:
i. the upper surface of the sample table is a concave curved surface. As shown in fig. 2(a), fig. 2(b) is a schematic cross-sectional view of the sample stage, and fig. 2(c) is a view of the effect of placing a sample on the sample stage.
ii. The center position of the upper surface of the sample table is a concave curved surface, and the outer edge position of the upper surface is a plane. As shown in fig. 3(a), fig. 3(b) is a schematic cross-sectional view of the sample stage, and fig. 3(c) is a view showing the effect of placing the sample on the sample stage.
In an embodiment of the present invention, a central groove is formed in the central position of the upper surface of the sample stage, and the remaining grooves or steps are circumferentially and regularly distributed around the central groove, as shown in fig. 5(a), fig. 5(b) is a schematic cross-sectional view of the sample stage, and fig. 5(c) is an effect view of the sample stage on placing the sample stage.
In one embodiment of the invention, the grooves arranged in the upper surface of the sample table are cylindrical and regularly arranged on the curved surface, the diameter of each groove is 0.5cm to 10cm, and the depth of each groove is 0.1cm to 5 cm. The depth and radius of the groove can be adjusted according to the size of the substrate sample or the sample tray, the ratio of the depth of the groove to the thickness of the sample or the sample tray is 1: 1 to 1: 5, and the purpose of the depth adjustment is to stably place the sample on a curved surface. The radius of the groove is set so that a substrate sample or a substrate tray can be placed in the groove, and the size of the groove can be adjusted according to the size of the sample or the sample tray, and the ratio of the width of the sample or the sample tray to the radius of the groove is 1: 1 to 1: 3, as shown in fig. 2 and 4.
In one embodiment of the invention, the steps arranged in the upper surface of the sample stage are sequentially increased from inside to outside, namely, the height of the steps relative to the bottom surface is gradually increased along with the distance between the steps and the central groove. The height of each step and the width of the upper surface can be adjusted according to the size of each placed sample and the distribution condition of an electric field, the ratio of the width of the sample or the sample platform to the width of the upper surface of each step is 1: 1.2 to 1: 10, and the ratio of the thickness of the sample or the sample platform to the height of each step is 1: 1 to 1: 50, so that a substrate sample can be stably placed, and uniform electric field distribution can be obtained above each sample, as shown in fig. 5.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A sample stage for a microwave plasma chemical vapor deposition device is characterized in that the sample stage is of a cylindrical structure, the upper surface of the sample stage is provided with a concave curved surface, and the concave curved surface is provided with at least one groove for placing a substrate or a substrate tray required by chemical vapor deposition.
2. Sample stage for a microwave plasma chemical vapour deposition apparatus according to claim 1, wherein the concave curved surface is entirely symmetrical about an axis of the cylindrical structure.
3. A sample stage for a microwave plasma chemical vapor deposition apparatus according to claim 1, wherein the depth of the concave curved surface is 1cm to 10 cm.
4. Sample stage for a microwave plasma chemical vapor deposition apparatus according to claim 1,
the upper surface of the sample stage is totally a concave curved surface, or
The center position of the upper surface of the sample table is a concave curved surface, and the outer edge position of the upper surface is a plane.
5. Sample stage for a microwave plasma chemical vapor deposition apparatus according to any one of claims 1 to 4, wherein the concave curved surface has a central groove at a central position, and the concave curved surface further has grooves or steps regularly distributed in a circumference around the central groove.
6. Sample stage for a microwave plasma chemical vapor deposition apparatus according to claim 5, wherein the grooves are cylindrical grooves with a groove diameter of 0.5cm to 10cm and a groove depth of between 0.1cm to 5 cm.
7. Sample stage for a microwave plasma chemical vapor deposition apparatus according to claim 5, wherein the height of the step with respect to the bottom surface gradually increases with increasing distance of the step from the central recess.
8. Sample stage for a microwave plasma chemical vapour deposition apparatus according to claim 7, wherein the ratio of the height of the step to the thickness of the sample or stage is between 1: 1 and 50: 1.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911354430.2A CN110983298A (en) | 2019-12-24 | 2019-12-24 | Sample table structure for microwave plasma chemical vapor deposition device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911354430.2A CN110983298A (en) | 2019-12-24 | 2019-12-24 | Sample table structure for microwave plasma chemical vapor deposition device |
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| CN110983298A true CN110983298A (en) | 2020-04-10 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111323364A (en) * | 2020-04-21 | 2020-06-23 | 中国航发沈阳发动机研究所 | Thermal corrosion test device and method for homogenized deposited salt |
| CN111979579A (en) * | 2020-08-24 | 2020-11-24 | 哈尔滨工业大学 | Plasma gathering device for high-speed growth of chemical vapor deposition single crystal diamond |
| WO2023035429A1 (en) * | 2021-09-13 | 2023-03-16 | 吕反修 | Method for depositing diamond film coating on surface of moissanite |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5567242A (en) * | 1991-08-16 | 1996-10-22 | Sandvik Ab | Apparatus for depositing diamond coating in reactor equipped with a bowl-shaped substrate |
| CN102576673A (en) * | 2009-10-20 | 2012-07-11 | 东京毅力科创株式会社 | Sample table and microwave plasma processing apparatus |
| EP3305940A1 (en) * | 2016-10-06 | 2018-04-11 | CoorsTek KK | Susceptor |
-
2019
- 2019-12-24 CN CN201911354430.2A patent/CN110983298A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5567242A (en) * | 1991-08-16 | 1996-10-22 | Sandvik Ab | Apparatus for depositing diamond coating in reactor equipped with a bowl-shaped substrate |
| CN102576673A (en) * | 2009-10-20 | 2012-07-11 | 东京毅力科创株式会社 | Sample table and microwave plasma processing apparatus |
| EP3305940A1 (en) * | 2016-10-06 | 2018-04-11 | CoorsTek KK | Susceptor |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111323364A (en) * | 2020-04-21 | 2020-06-23 | 中国航发沈阳发动机研究所 | Thermal corrosion test device and method for homogenized deposited salt |
| CN111979579A (en) * | 2020-08-24 | 2020-11-24 | 哈尔滨工业大学 | Plasma gathering device for high-speed growth of chemical vapor deposition single crystal diamond |
| CN111979579B (en) * | 2020-08-24 | 2021-11-09 | 哈尔滨工业大学 | Plasma gathering device for high-speed growth of chemical vapor deposition single crystal diamond |
| WO2023035429A1 (en) * | 2021-09-13 | 2023-03-16 | 吕反修 | Method for depositing diamond film coating on surface of moissanite |
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