CN110970481B - Display substrate, preparation method thereof and display device - Google Patents
Display substrate, preparation method thereof and display device Download PDFInfo
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- CN110970481B CN110970481B CN201911312650.9A CN201911312650A CN110970481B CN 110970481 B CN110970481 B CN 110970481B CN 201911312650 A CN201911312650 A CN 201911312650A CN 110970481 B CN110970481 B CN 110970481B
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- 239000000758 substrate Substances 0.000 title claims abstract description 99
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000010409 thin film Substances 0.000 claims abstract description 24
- 238000004806 packaging method and process Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 27
- 238000005538 encapsulation Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000007772 electrode material Substances 0.000 claims description 8
- 239000010408 film Substances 0.000 claims description 4
- 239000002096 quantum dot Substances 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 80
- 238000000206 photolithography Methods 0.000 description 8
- 239000004642 Polyimide Substances 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 230000005693 optoelectronics Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000002346 layers by function Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention provides a display substrate, a preparation method thereof and a display device. The display substrate comprises a substrate, a pixel defining layer arranged on the substrate, a light emitting device arranged at the position of the slotting region, and a thin film packaging layer covering the light emitting device and the pixel defining layer, and is characterized by further comprising a photoelectric sensing device arranged on one side of the thin film packaging layer, which is opposite to the substrate, wherein the front projection of the photoelectric sensing device on the substrate overlaps with the front projection of the pixel defining layer on the substrate, and the front projection of the photoelectric sensing device on the substrate does not overlap with the front projection of the slotting region on the substrate. The preparation process of the display substrate is simple, and the structural design of the display device which is participated in formation is simple.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display substrate, a display device and a preparation method of the display substrate.
Background
In the existing display device, a photoelectric sensor is used to detect the ambient light brightness, and then the maximum brightness of the display panel is automatically adjusted according to the ambient light brightness. The photoelectric sensing device and the display panel or the display substrate are separated components, so that the cost is high, and the difficulty in structural design of the display device is increased.
Disclosure of Invention
The invention provides a display substrate, a display device and a preparation method of the display substrate, which aim to at least partially solve the technical problems in the prior art.
According to a first aspect of the present invention, there is provided a display substrate, including a substrate, and a pixel defining layer disposed on the substrate, where the pixel defining layer is formed with a grooved region, the display substrate further includes a light emitting device disposed at a position where the grooved region is located, a thin film encapsulation layer covering the light emitting device and the pixel defining layer, and the display substrate further includes a photo sensor device disposed on a side of the thin film encapsulation layer facing away from the substrate, where a front projection of the photo sensor device on the substrate overlaps a front projection of the pixel defining layer on the substrate, and where a front projection of the photo sensor device on the substrate does not overlap a front projection of the grooved region on the substrate.
In some embodiments, the optoelectronic sensing device comprises a first electrode, a PIN junction, a second electrode, which are sequentially remote from the substrate and stacked.
In some embodiments, the first electrode of the optoelectronic sensor device is integral, the PIN junction of the optoelectronic sensor device is integral, and the second electrode of the optoelectronic sensor device is integral.
In some embodiments, the second electrode is a transparent electrode and the first electrode is a reflective electrode.
In some embodiments, the photo-sensing device is flush with both boundaries of the pixel defining layer.
In some embodiments, the light emitting device is an organic light emitting diode or a quantum dot light emitting diode.
According to a second aspect of the present invention, there is provided a display device comprising the display substrate of the first aspect.
According to a third aspect of the present invention, there is provided a method of manufacturing a display substrate, comprising: providing a substrate, forming a pixel defining layer on the substrate, forming a grooving region on the pixel defining layer, and forming a light emitting device at the position of the grooving region; forming a thin film encapsulation layer covering the light emitting device and the pixel defining layer; and forming a photoelectric sensing device on the thin film packaging layer, wherein the front projection of the photoelectric sensing device on the substrate is overlapped with the front projection of the pixel defining layer on the substrate, and the front projection of the photoelectric sensing device on the substrate is not overlapped with the front projection of the grooving area on the substrate.
In some embodiments, the photosensor includes a first electrode, a PIN junction, a second electrode, stacked in order away from the substrate, the forming a photosensor device on the thin film encapsulation layer includes: sequentially forming a first electrode material layer, a PIN junction material layer and a second electrode material layer on the film packaging layer; and processing the first electrode material layer, the PIN junction material layer and the second electrode material layer by utilizing a photoetching process to obtain the first electrode, the PIN junction and the second electrode.
In some embodiments, the pixel defining layer is formed using a photolithography process using a first mask, and the first mask is used in the photolithography process for forming the first electrode, the PIN junction, and the second electrode.
Drawings
Fig. 1 is a top perspective view of a display substrate according to an embodiment of the present invention.
Fig. 2 is a schematic diagram of a laminated structure of the display substrate shown in fig. 1.
Fig. 3 is a flowchart of a method for manufacturing a display substrate according to an embodiment of the invention.
Fig. 4 is a schematic diagram illustrating an operation principle of a display device according to an embodiment of the present invention.
The reference numerals are: 1. a substrate; H. a slotted zone; 2. a buffer layer; 31. an active layer; 32. a gate insulating layer; 33. a gate; 34. an interlayer insulating layer; 35. a source/drain electrode; 36. a planarization layer; 41. a third electrode; 42. an organic functional layer; 43. a fourth electrode; 4. a light emitting device; 5. a pixel defining layer; 6. a thin film encapsulation layer; 71. a first electrode; 72. a PIN junction; 73. a second electrode; 7. a photoelectric sensor.
Detailed Description
The present invention will be described in further detail below with reference to the drawings and detailed description for the purpose of better understanding of the technical solution of the present invention to those skilled in the art.
In the present invention, the photolithography process includes one or more of the steps of forming a material layer, coating a photoresist, exposing, developing, etching, photoresist stripping, and the like.
Referring to fig. 1 and 2, an embodiment of the present invention provides a display substrate, including a substrate 1, a pixel defining layer 5 disposed on the substrate 1, where the pixel defining layer 5 forms a slotting region H, a light emitting device 4 disposed at a position where the slotting region H is located, a thin film encapsulation layer 6 covering the light emitting device 4 and the pixel defining layer 5, and a photo sensor device 7 disposed on a side of the thin film encapsulation layer 6 facing away from the substrate 1, where an orthographic projection of the photo sensor device 7 on the substrate 1 overlaps an orthographic projection of the pixel defining layer 5 on the substrate 1, and where an orthographic projection of the photo sensor device 7 on the substrate 1 overlaps an orthographic projection of the slotting region H on the substrate 1.
The material of the substrate 1 is, for example, glass, and in some embodiments the substrate 1 is divided into multiple layers of material, for example, a bottom glass layer and an upper Polyimide (PI) layer.
The thin film encapsulation layer 6 may provide a planar surface for the photo-sensing device 7 thereon. The photoelectric sensing device 7 is integrated on the upper surface of the thin film encapsulation layer 6, and the photoelectric sensing device 7 can be used for detecting the intensity of ambient light. On the other hand, the photoelectric sensor 7 is provided in an area other than the opening area of the display substrate, so that the influence on the display light can be avoided, and the display aperture ratio is not reduced.
In some embodiments, referring to fig. 2, the photo-sensing device 7 comprises a first electrode 71, a PIN junction 72, a second electrode 73, which are sequentially remote from the substrate 1 and stacked.
I.e. the photo-sensing device 7 is constituted by a photodiode. Of course, the structure constituting the photo-sensor device 7 is not limited to a photodiode.
In some embodiments, referring to fig. 1, the first electrode 71 of the photo-sensing device 7 is integral, the PIN junction 72 of the photo-sensing device 7 is extremely integral, and the second electrode 73 of the photo-sensing device 7 is integral.
That is, a photodiode is formed on the display substrate, and the photodiode can detect the overall brightness of a portion of the display substrate irradiated with ambient light.
Of course, a plurality of discrete photodiodes may be provided on the display substrate.
In some embodiments, the second electrode 73 is a transparent electrode. The second electrode 73 may be formed of a transparent conductive material.
The transparent conductive material is, for example, indium Tin Oxide (ITO) or the like. Advantageously, ambient light better impinges on the PIN junction 72.
In some embodiments, the first electrode 71 is a reflective electrode. Wherein a light reflecting material may be used.
The reflective material is, for example, aluminum or silver, and has a good reflection effect on ambient light, so that the photosensitive structures such as the PIN junction 72 can absorb more ambient light for conversion, and the conversion efficiency is improved. The first electrode 71 may have a single-layer structure, or may have a multi-layer structure, for example, a titanium material layer, an aluminum material layer, a titanium material layer, or the like in this order. This is also to better reflect light.
In some embodiments, the photo-sensing device 7 is flush with both boundaries of the pixel defining layer 5.
On the one hand, in order to make use of the area outside the opening area of the display substrate to a greater extent, on the other hand, when preparing the two structures, the same mask plate can be used if a photolithography process is required.
In some embodiments, the light emitting device 4 is an organic light emitting diode or a quantum dot light emitting diode.
Taking the light emitting device 4 as an example of an organic light emitting diode, the detailed structure of the display substrate will be described in detail below with reference to fig. 2.
A buffer layer 2 is provided on the substrate 1. The material of the substrate 1 is, for example, glass or Polyimide (PI) or the like. The material of the buffer layer 2 is, for example, silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof, or the like.
The buffer layer 2 is provided with a pixel circuit including transistors. The transistor is, for example, a top gate thin film transistor, and referring to fig. 2, the transistor includes an active layer 31, a gate insulating layer 32, a gate electrode 33, and source and drain electrodes 35 (source and drain electrodes, respectively) sequentially distant from the substrate 1, and the source and drain electrodes 35 are in contact with and electrically connected to the active layer 31 through vias penetrating through the interlayer insulating layer 34 and the gate insulating layer 32.
The third electrode 41 is electrically connected to the source and drain electrodes 35 through a via hole penetrating the planarization layer 36. The material of the planarization layer 36 is, for example, polyimide (PI). The organic functional layer 42 is disposed within the grooved region H formed by the pixel defining layer 5. The fourth electrode 43 of each organic light emitting diode of the display substrate may be integrally connected. The third electrode 41 is, for example, an anode of an organic light emitting diode. The fourth electrode 43 is, for example, a cathode of an organic light emitting diode.
The thin film encapsulation layer 6 covers the fourth electrode 43 to protect the organic light emitting diode and the underlying pixel circuit from oxygen and moisture. The thin film encapsulation layer 6 may have a single-layer structure, a multilayer structure, an organic thin film encapsulation structure, or an inorganic thin film encapsulation structure.
The structures of the light emitting device 4 and the transistor are not particularly limited in the present invention. Those skilled in the art can make flexible settings according to actual needs.
The embodiment of the invention also provides a display device which comprises the display substrate.
The display device is any product or component with display function, such as an organic light emitting diode display panel, a quantum dot light emitting diode display panel, a display module, a mobile phone, a display, a navigator and the like.
Referring to fig. 4, in some embodiments, the brightness of the display substrate in the display device is adjusted as follows.
Ambient light is irradiated onto the display substrate, and the photo-sensing device on the display substrate then converts the optical signal into an electrical signal (e.g., a current signal or a voltage signal). The display device is provided with a calculation module which is used for analyzing the electric signal and determining the corresponding ambient light brightness and the corresponding proper screen brightness of the electric signal. The screen brightness herein refers to the maximum brightness of the screen, for example, the brightness when a solid white image of the highest gray level is displayed. Of course, the electric signal and the appropriate screen brightness can be pre-established into a lookup table, so that the operation amount of the calculation module is simplified. The detection of ambient light level may be performed in real time or at intervals. If the ambient light brightness changes, the screen brightness is determined again, otherwise, the current screen brightness is kept unchanged.
Referring to fig. 3 and fig. 1 and 2, an embodiment of the present invention further provides a method for manufacturing a display substrate, where the manufacturing method can manufacture the display substrate, and the technical details of the manufacturing method and the manufacturing method can be referred to each other. The manufacturing method comprises the following steps.
In step S1, a substrate 1 is provided, and a pixel defining layer 5 is formed on the substrate 1, the pixel defining layer 5 is formed with a grooved region H, and a light emitting device 4 is formed at a position where the grooved region H is located.
Referring to fig. 1 and 2, this step may be to form a buffer layer 2 on a substrate 1, then form a driving circuit constituted by transistor participation, then form a third electrode 41, then form a pixel defining layer 5, then ink jet print or evaporate a material of an organic functional layer 42 in a grooved region H of the pixel defining layer 5, then cure the material, and then continue to form an entire fourth electrode 43. Of course, the fourth electrode 43 may be discrete.
In step S2, a thin film encapsulation layer 6 covering the light emitting device 4 and the pixel defining layer 5 is formed.
In step S3, the photo-sensor device 7 is formed on the thin-film encapsulation layer 6, wherein the front projection of the photo-sensor device 7 on the substrate 1 overlaps with the front projection of the pixel defining layer 5 on the substrate 1, and the front projection of the photo-sensor device 7 on the substrate 1 does not overlap with the front projection of the grooved region H on the substrate 1.
The display substrate prepared in this way integrates the function of ambient light detection, and the preparation process is compatible with the existing preparation process of the display substrate.
Of course, it is also necessary to encapsulate the photosensor device with a transparent material.
In some embodiments, the photo-sensing device 7 comprises a first electrode 71, a PIN junction 72, a second electrode 73, which are sequentially remote from the substrate 1 and stacked. Forming the photo-sensing device 7 on the thin film encapsulation layer 6 comprises the following sub-steps.
In sub-step S31, a first electrode 71 material layer, a PIN junction 72 material layer, and a second electrode 73 material layer are sequentially formed on the thin film encapsulation layer 6. The material of the material layer of the first electrode 71 is, for example, a metal material with good light reflection effect such as copper or aluminum. The material of the material layer of the second electrode 73 is, for example, a transparent conductive material such as indium tin oxide.
In sub-step S32, the first electrode 71 material layer, the PIN junction 72 material layer, and the second electrode 73 material layer are processed by a single photolithography process to obtain the first electrode 71, the PIN junction 72, and the second electrode 73.
That is, a mask plate is used to form the patterns of the first electrode 71, the PIN junction 72 and the second electrode 73 in one photolithography process. Specifically, after forming a mask pattern composed of photoresist, wet etching is sequentially performed using different etching liquids, or dry etching is performed. The etching step cannot damage the thin film encapsulation layer 6.
In some embodiments, the pixel defining layer 5 is formed using a photolithography process using a first mask, and the first mask is used in the photolithography process for forming the first electrode 71, the PIN junction 72, and the second electrode 73.
I.e. the pattern of the pixel defining layer 5 is identical to the pattern of the photo sensor device 7, i.e. the number of masks is saved, and the area outside the opening area on the display substrate can be utilized to the maximum extent.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.
Claims (5)
1. The display substrate comprises a substrate, a pixel defining layer arranged on the substrate, a light emitting device arranged at the position of the slotting region, and a thin film packaging layer covering the light emitting device and the pixel defining layer, and is characterized by further comprising a photoelectric sensor arranged on one side of the thin film packaging layer, which is opposite to the substrate, wherein the front projection of the photoelectric sensor on the substrate is overlapped with the front projection of the pixel defining layer on the substrate, and the front projection of the photoelectric sensor on the substrate is not overlapped with the front projection of the slotting region on the substrate; the photoelectric sensor is used for detecting the intensity of external environment light;
the photoelectric sensing device comprises a first electrode, a PIN junction and a second electrode which are sequentially far away from the substrate and are overlapped; the first electrode of the photoelectric sensing device is connected into a whole, the PIN junction electrode of the photoelectric sensing device is connected into a whole, and the second electrode of the photoelectric sensing device is connected into a whole.
2. The display substrate of claim 1, wherein the second electrode is a transparent electrode and the first electrode is a reflective electrode.
3. The display substrate according to claim 1, wherein the light emitting device is an organic light emitting diode or a quantum dot light emitting diode.
4. A display device comprising the display substrate according to any one of claims 1 to 3.
5. A method for manufacturing a display substrate, comprising:
providing a substrate, forming a pixel defining layer on the substrate by using a first mask plate through a photoetching process, wherein the pixel defining layer is formed with a slotting region, and forming a light-emitting device at the position of the slotting region;
forming a thin film encapsulation layer covering the light emitting device and the pixel defining layer;
forming a photoelectric sensing device on the film packaging layer, wherein the photoelectric sensing device is used for detecting the intensity of external environment light; wherein the pattern of the pixel defining layer is the same as the pattern of the photo-sensing device such that the orthographic projection of the photo-sensing device on the substrate overlaps the orthographic projection of the pixel defining layer on the substrate, and the orthographic projection of the photo-sensing device on the substrate does not overlap the orthographic projection of the grooved region on the substrate;
the photoelectric sensor comprises a first electrode, a PIN junction and a second electrode which are sequentially far away from the substrate and are overlapped,
the forming of the photoelectric sensing device on the film packaging layer comprises the following steps:
sequentially forming a first electrode material layer, a PIN junction material layer and a second electrode material layer on the film packaging layer;
and processing the first electrode material layer, the PIN junction material layer and the second electrode material layer by adopting the first mask plate through a one-time photoetching process to obtain the first electrode, the PIN junction and the second electrode.
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