CN107145854B - Array substrate, manufacturing method thereof and fingerprint identification device - Google Patents
Array substrate, manufacturing method thereof and fingerprint identification device Download PDFInfo
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- CN107145854B CN107145854B CN201710296200.XA CN201710296200A CN107145854B CN 107145854 B CN107145854 B CN 107145854B CN 201710296200 A CN201710296200 A CN 201710296200A CN 107145854 B CN107145854 B CN 107145854B
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- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
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Abstract
The invention provides an array substrate, which comprises a substrate, a self-luminous unit and a plurality of photoelectric detection units, wherein the self-luminous unit and the photoelectric detection units are arranged on the substrate, and the orthographic projection of each photoelectric detection unit on the substrate is surrounded by the orthographic projection of the self-luminous unit on the substrate. Correspondingly, the invention further provides a manufacturing method of the array substrate and a fingerprint identification device. The invention can improve the utilization rate of light rays, thereby improving the signal-to-noise ratio by photoelectric detection and improving the fingerprint identification effect.
Description
Technical Field
The invention relates to the field of photoelectric detection, in particular to an array substrate, a manufacturing method thereof and a fingerprint identification device.
Background
The fingerprint identification is to obtain different electric signals according to different light reflected by valleys and ridges of a fingerprint by utilizing a principle of photoelectric detection, and further obtain a fingerprint image. The structure of the fingerprint identification device in the prior art is as follows: a plurality of organic light emitting diodes and photodiodes corresponding to the organic light emitting diodes one to one are disposed on a substrate, and the photodiodes are disposed below the respective organic light emitting diodes. When fingerprint identification is carried out, the organic light emitting diode emits light upwards, the light is reflected to the photodiode of below by the finger, the photodiode converts the optical signal into corresponding electrical signal, the valley of the fingerprint is different from the light reflected downwards by the ridge, so that the corresponding electrical signal is different in size, and the detection circuit obtains the image of the fingerprint according to the electrical signal corresponding to the valley and the ridge.
The signal-to-noise ratio is an important factor for evaluating the photoelectric detection effect, and the accuracy and efficiency of photoelectric detection can be improved by improving the signal-to-noise ratio. Therefore, it is necessary to improve the signal-to-noise ratio of the photoelectric detection in various ways, and further improve the accuracy of fingerprint identification.
Disclosure of Invention
The invention aims to solve at least one technical problem in the prior art, and provides an array substrate, a manufacturing method thereof and a fingerprint identification device, so as to improve the signal-to-noise ratio of photoelectric detection and further improve the accuracy of fingerprint identification.
In order to solve one of the above technical problems, the present invention provides an array substrate, including a substrate and a self-luminous unit and a plurality of photo-detection units disposed on the substrate, wherein an orthographic projection of each of the photo-detection units on the substrate is surrounded by an orthographic projection of the self-luminous unit on the substrate.
Preferably, the self-light emitting unit includes a first light emitting portion extending along a plurality of first directions and a second light emitting portion extending along a plurality of second directions, the first light emitting portion and the second light emitting portion intersect with each other to form a mesh structure, the mesh structure forms a mesh projection on the substrate, the photo detection units correspond to meshes of the mesh projection one to one, and an orthogonal projection of each photo detection unit toward the substrate is located in a corresponding mesh.
Preferably, a boundary of an orthographic projection of the photodetecting unit toward the substrate coincides with an inner boundary of a mesh to which the photodetecting unit corresponds.
Preferably, the self-light emitting unit is located on one side of the substrate facing the light emitting direction, and the photoelectric detection unit is located on the other side of the substrate facing away from the light emitting direction.
Preferably, the substrate is further provided with thin film transistors corresponding to the photodetecting units one to one and a first electrode connected between the thin film transistors and the photodetecting device, a part of the first electrode is disposed on a drain of the thin film transistor, the photodetecting unit is located on a side of the first electrode departing from the substrate, and a surface of the photodetecting unit departing from the substrate is further provided with a second electrode.
Correspondingly, the invention also provides a manufacturing method of the array substrate, which comprises the following steps:
providing a substrate;
forming a plurality of photodetecting units on the substrate;
and forming a self-luminous unit on the substrate, wherein the orthographic projection of each photoelectric detection unit on the substrate is surrounded by the orthographic projection of the self-luminous unit on the substrate.
Preferably, the self-light emitting unit includes a plurality of first light emitting portions extending in a first direction and a plurality of second light emitting portions extending in a second direction, the first light emitting portions and the second light emitting portions intersect with each other to form a mesh structure, the mesh structure forms a mesh projection on the substrate, the photo-detection units correspond to meshes of the mesh projection one to one, and an orthogonal projection of each photo-detection unit toward the substrate is located in a corresponding mesh.
Preferably, the self-light emitting unit is located on one side of the substrate facing the light emitting direction, and the photoelectric detection unit is located on the other side of the substrate facing away from the light emitting direction.
Preferably, the step of forming the photodetecting unit on the substrate further comprises, before the step of: forming a plurality of thin film transistors and alignment marks, wherein the thin film transistors correspond to the photoelectric detection units one by one, and the alignment marks are positioned on the edge of the array substrate;
forming transparent first electrodes in one-to-one correspondence with the thin film transistors, wherein a part of each first electrode is arranged on the drain electrode of the corresponding thin film transistor;
the step of forming the photodetecting unit further comprises:
forming a second electrode on the surface of the photoelectric detection unit, which faces away from the substrate;
the step of forming the self-light emitting unit on the substrate is performed after the step of forming the photodetecting unit, and in the process of forming the self-light emitting unit, alignment is performed using the alignment mark so that a boundary of an orthographic projection of the photodetecting unit toward the substrate coincides with an inner boundary of a cell corresponding to the photodetecting unit.
Correspondingly, the invention further provides a fingerprint identification device which comprises the array substrate provided by the invention.
In the invention, because the orthographic projection of each photoelectric detection unit on the substrate is surrounded by the orthographic projection of the self-luminous unit on the substrate, when a finger is placed above the array substrate, light emitted by the self-luminous unit is reflected by the finger and then directly emitted to the photoelectric detection unit without being shielded. Moreover, the light received by each photoelectric detection unit is emitted by the self-luminous units at the periphery, and compared with the structure that the self-luminous units are arranged above each photoelectric detection device in the prior art, the photoelectric detection unit can receive more light, so that more effective signals are received, and the signal-to-noise ratio of photoelectric conversion is improved. In addition, when a certain detection point of the finger corresponds to a region between two self-luminous units, light reflected by the detection point can be received by the photoelectric detection unit below the region and can not be received by other photoelectric detection units, so that image recognition of the detection point can be conveniently carried out subsequently.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
fig. 1 is a top view of an array substrate provided in an embodiment of the present invention;
FIG. 2 is a schematic view showing a positional relationship between a self-light emitting unit and a photodetecting unit in an embodiment of the present invention;
FIG. 3 is a schematic diagram of a specific arrangement structure of a photodetecting unit on a substrate;
fig. 4 is a flowchart of a method for manufacturing an array substrate according to an embodiment of the invention.
Wherein the reference numbers are:
1. a substrate; 2. a self-light emitting unit; 21. a first light emitting portion; 22. a second light emitting section; 3. a photodetecting unit; 4. an insulating layer; 5. a thin film transistor; 51. a gate electrode; 52. a source electrode; 53. a drain electrode; 54. an active layer; 6. a first electrode; 7. a second electrode; 8. and a passivation layer.
Detailed Description
The following describes in detail embodiments of the present invention with reference to the drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
As an aspect of the present invention, there is provided an array substrate, as shown in fig. 1 to 3, the array substrate including a substrate 1 and a self-light emitting unit 2 and a plurality of photo-detection units 3 disposed on the substrate 1, an orthogonal projection of each of the photo-detection units 3 on the substrate 1 being surrounded by an orthogonal projection of the self-light emitting unit 2 on the substrate 1.
The photoelectric detection unit 3 may be a PIN photodiode, and includes an N-type amorphous silicon film layer, an intrinsic amorphous silicon film layer, and a P-type amorphous silicon film layer, which are sequentially stacked. The photoelectric detection unit 3 generates hole electron pairs under the irradiation of visible light, the electrons move towards the N-type amorphous silicon film layer, and the holes move towards the P-type amorphous silicon film layer.
In the present application, the self-light emitting unit 2 may be an electroluminescent device such as an organic light emitting unit OLED, a quantum dot light emitting unit QLED, a Micro array light emitting unit Micro LED, and the like. In the following embodiments, the implementation and principle of the technical solution of the present application are illustrated by taking an organic light emitting unit OLED as an example.
The organic light emitting unit OLED may particularly adopt a top emission type structure including a plurality of light emitting film layers such as a reflective electrode, an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, a hole injection layer, a transparent electrode, which are sequentially stacked; the photodetecting unit 3 may be disposed in a layer below the self-luminous unit 2 in order not to affect the reflection of light from the self-luminous unit 2. Alternatively, the self-light emitting unit 2 is a bottom emission type structure, and the photodetecting unit 3 is disposed in a layer above the self-light emitting unit 2. When fingerprint identification is carried out, the light emitted by the organic light-emitting unit OLED is reflected to the photoelectric detection unit 3 by a finger, the photoelectric detection unit 3 receives a light signal and converts the light signal into an electric signal, and the converted electric signal is different due to different light reflected by the valleys and the ridges of the fingerprint, so that the detection circuit obtains the image of the fingerprint according to different electric signals.
In the present invention, since the orthographic projection of each photodetecting unit 3 on the substrate 1 is surrounded by the orthographic projection of the self-luminous unit 2 on the substrate, when a finger is placed above the array substrate, the light emitted from the self-luminous unit 2 is reflected by the finger and then directed to the photodetecting unit 3 without being blocked. Moreover, the light received by each photoelectric detection unit 3 is emitted by the surrounding self-luminous units 2, and compared with the structure that the self-luminous units 2 are arranged above each photoelectric detection device in the prior art, the photoelectric detection unit 3 in the invention can receive more light, so that more effective signals are received, and the signal-to-noise ratio of photoelectric conversion is further improved. In addition, with the structure in the related art (i.e., one photodetecting unit is disposed below each self-luminous unit), when a certain detection point of a finger corresponds to a region between two self-luminous units, the photodetecting units below the two self-luminous units may receive light reflected from the detection point, thereby causing interference, which is not favorable for performing image recognition of the detection point; in the present invention, when a certain detection point of the finger is located in the area a in fig. 2, the light reflected by the detection point is received by the photodetecting unit 3 below the area a, but is not received by other photodetecting units 3, so that interference of different detection signals of different photodetecting units 3 during subsequent image recognition is prevented.
The present invention is not particularly limited in terms of the specific shape and arrangement of the self-light emitting units 2, and for example, a plurality of spaced self-light emitting units 2 may be provided, and the photodetecting unit 3 surrounds the orthographic projection of the plurality of self-light emitting units 2 around the orthographic projection on the substrate 1; the following steps can be also included: the self-light emitting unit 2 is of an integral structure. Preferably, the present invention employs a structure in which the self-light emitting units 2 are arranged in a single body, and specifically, as shown in fig. 1, the self-light emitting units 2 include a first light emitting portion 21 extending in a plurality of first directions and a second light emitting portion 22 extending in a plurality of second directions, the first light emitting portion 21 and the second light emitting portion 22 intersect with each other to form a mesh structure, the mesh structure forms a mesh projection on the substrate 1, the mesh projection includes a plurality of mesh cells, the photodetecting units 3 correspond to the mesh cells of the mesh projection one by one, and the orthographic projections of the photodetecting units 3 toward the substrate 1 are located in the respective mesh cells. This structure makes the area of the self-light emitting unit 2 around each photodetecting unit 3 larger, so that the photodetecting unit 3 can receive more light, further improving the signal-to-noise ratio.
Based on the technical idea of the present invention, those skilled in the art can easily understand that other arrangements, such as triangle, prism, etc., besides the above arrangement of the self-light emitting units are still covered by the protection scope of the present invention.
Furthermore, the boundary of the orthographic projection of the photoelectric detection unit 3 towards the substrate 1 coincides with the inner boundary of the grid corresponding to the photoelectric detection unit 3, so that the light receiving area is improved to the maximum extent, the light receiving quantity is further improved, and the signal to noise ratio is improved under the condition that the reflected light is not blocked and is emitted to the photoelectric detection unit 3. Wherein, the inner boundary of the grid is: of the two first light-emitting portions 21 and the two second light-emitting portions 22 that surround the mesh, the edges of the two first light-emitting portions 21 that face each other and the edges of the two second light-emitting portions 22 that face each other. For example, in fig. 1, four boundaries of the projection of the photodetection unit 3 at the upper left corner on the substrate coincide with the projections of the lower edge of the uppermost first light-emitting portion 21, the upper edge of the second first light-emitting portion 21 from top to bottom, the right edge of the leftmost second light-emitting portion 22, and the left edge of the second light-emitting portion 22 from left to right on the substrate 1, respectively.
It should be understood that the array substrate further includes an insulating layer 4, and the insulating layer 4 has a receiving groove formed thereon, in which the self-light emitting unit 2 is disposed. Taking the self-light emitting unit 2 as a top-emission organic light emitting unit as an example, a transparent electrode is further disposed above the organic light emitting unit, and a reflective electrode (not shown) is disposed below the organic light emitting unit. The fingerprint identification device comprising the array substrate can be only used for identifying fingerprints, at the moment, the transparent electrode and the reflecting electrode can be both in a whole-layer structure, and the array substrate further comprises high and low level signal lines which are used for providing signals for the reflecting electrode and the transparent electrode respectively, so that the organic light-emitting unit emits light. The fingerprint identification device can also carry out fingerprint identification and picture display simultaneously, at this moment, can set up transparent electrode to whole layer structure, set up reflecting electrode's quantity into a plurality ofly, a plurality of reflecting electrode arrange into multirow multiseriate, be provided with many scanning lines on the array substrate, many data lines and with the switch tube of reflecting electrode one-to-one, scan through the scanning of scanning line, data line provide data signal and switch tube open and realize showing, the concrete display process is the same with the display principle of organic light emitting display panel among the prior art, here does not explain in detail.
Further, as shown in fig. 2, a self-light emitting unit 2 and a photodetecting unit 3 are respectively disposed on both sides of the substrate 1, wherein the self-light emitting unit 2 is located on a side of the substrate 1 facing the light outgoing direction, and the photodetecting unit 3 is located on a side of the substrate 1 facing away from the light outgoing direction. In fig. 2, the self-light emitting unit 2 is a top-emission structure, one side of the substrate 1 facing the light emitting direction is an upper side of the substrate 1, and one side of the substrate 1 facing away from the light emitting direction is a lower side of the substrate 1. Therefore, when the organic light-emitting unit is used as the self-light-emitting unit 2, the organic light-emitting unit can be arranged on a relatively flat surface, a planarization layer does not need to be manufactured separately, the overall thickness of a product is reduced, and the cost is reduced.
As shown in fig. 3, the substrate 1 is further provided with thin film transistors 5 corresponding to the photodetecting units 3 one to one, and first electrodes 6 connected between the thin film transistors 5 and the photodetecting units 3, the thin film transistors 5 include a gate electrode 51, an active layer 54, a source electrode 52, and a drain electrode 53, and a portion of the first electrodes 6 is provided on the drain electrode 53 of the thin film transistors 5 so as to be electrically connected to the drain electrode 53. The photodetecting unit 3 is located on a side of the first electrode 6 facing away from the substrate 1, and a surface of the photodetecting unit 3 facing away from the substrate 1 is further provided with a second electrode 7. The second electrode on each photoelectric detection unit 3 can be connected with the detection circuit through the detection line, and when photoelectric detection is carried out, the thin film transistors can be started line by line, so that when each line of thin film transistors is started, the photoelectric detection units 3 in a corresponding line carry out photoelectric conversion, and the converted electric signals are transmitted to the detection circuit through the second electrode and the detection line. A passivation layer 8 may be further disposed on the substrate 1, a via hole formed on the passivation layer 8, the via hole corresponding to a portion of the first electrode 6 not in contact with the drain electrode 53, and the photodetecting unit 3 disposed in the via hole.
It should be noted that, the arrangement of the first electrode 6 and the second electrode 7 should not affect the receiving of light by the photodetecting unit 3, when the photodetecting unit 3 and the self-luminous unit 2 are respectively arranged on two sides of the substrate 1, the first electrode 6 is a transparent electrode (for example, a silver tin oxide ITO electrode), and the second electrode 7 may be a transparent electrode or a non-transparent electrode; when the photodetecting unit 3 and the self-luminous unit 2 are disposed on the same side of the substrate 1, that is, the photodetecting unit 3 is disposed above the layer on which the thin film transistor 5 is disposed, and the self-luminous unit 2 is disposed above the layer on which the photodetecting unit 3 is disposed, the second electrode 7 is a transparent electrode, and the first electrode 6 may be a transparent electrode or a non-transparent electrode.
As another aspect of the present invention, there is provided a method for manufacturing an array substrate, as shown in fig. 1 to 3, the method including:
a substrate 1 is provided.
A plurality of photodetecting units 3 are formed on the substrate 1.
Self-light emitting units 2 are formed on a substrate 1, wherein an orthogonal projection of each photodetecting unit 3 on the substrate 1 is surrounded by an orthogonal projection of the self-light emitting unit 2 on the substrate 1.
In the present invention, since the orthographic projection of each photodetecting unit 3 on the substrate 1 is surrounded by the orthographic projection of the self-luminous unit 2 on the substrate 1, when a finger is placed above the array substrate, the light emitted from the self-luminous unit 2 is reflected by the finger and then directly emitted to the photodetecting unit 3 without being blocked. Moreover, the light received by each photoelectric detection unit 3 is emitted by the surrounding self-luminous units 2, so that each photoelectric detection unit 3 can receive more light, thereby receiving more effective signals and further improving the signal-to-noise ratio of photoelectric conversion. In addition, when a certain detection point of the finger corresponds to the area a between the two self-light emitting units 2, the light reflected by the detection point is received by the photoelectric detection unit 3 below the area a, but not received by the other photoelectric detection units 3, thereby facilitating subsequent image recognition of the detection point.
The following describes a method for manufacturing an array substrate according to the present invention with reference to fig. 1 and 4. The manufacturing method comprises the following steps:
s1, providing a substrate 1.
And S2, forming a plurality of thin film transistors 5 and alignment marks (not shown), wherein the alignment marks are positioned at the edge of the array substrate, namely, at the periphery of the area where the photoelectric detection unit 3 and the self-luminous unit 2 are positioned. The thin film transistor 5 includes a gate 51, an active layer 54, a source 52, and a drain 53, and the alignment mark is made of metal and may be formed simultaneously with the gate 51 of the thin film transistor 5 or simultaneously with the source 52 and the drain 53.
And S3, forming transparent first electrodes 6 corresponding to the thin film transistors 5 one by one, wherein a part of each first electrode is arranged on the drain electrode 53 of the corresponding thin film transistor 5, and the material of each first electrode 6 can specifically adopt Indium Tin Oxide (ITO).
And S4, forming a plurality of photoelectric detection units 3 on one side of the substrate 1 opposite to the light emitting direction (namely, the lower side of the substrate 1 in the figure 2), wherein the thin film transistors 5 correspond to the photoelectric detection units 3 one by one.
And S5, forming a second electrode 7 on the surface of the photoelectric detection unit 3, which is far away from the substrate 1.
S6, a self-light emitting unit 2 is formed on the other side of the substrate 1 toward the light outgoing direction (i.e., the upper side of the substrate 1 in fig. 2). Specifically, the self-light emitting unit 2 includes a first light emitting portion 21 extending in a plurality of first directions and a second light emitting portion 22 extending in a plurality of second directions, the first light emitting portion 21 and the second light emitting portion 22 intersect with each other to form a mesh structure, the mesh structure forms a mesh projection on the substrate 1, the photodetecting units 3 correspond one-to-one to meshes of the mesh projection, and an orthogonal projection of each photodetecting unit 3 toward the substrate 1 is located in a corresponding mesh.
In step S6, the alignment mark is used to perform alignment so that the boundary of the orthogonal projection of the photodetecting unit 3 toward the substrate 1 coincides with the inner boundary of the grid corresponding to the photodetecting unit 3 (as shown in fig. 1 and 2). In forming the self-luminous unit 2 in a grid shape, the insulating layer 4 may be formed, then the accommodating groove may be formed on the insulating layer 4 by using a photolithography and patterning process, the orthographic projection of the accommodating groove on the substrate 1 is in a grid shape, and then the plurality of light-emitting film layers may be formed in the accommodating groove by evaporation, thereby forming the organic light-emitting unit OLED as the self-luminous unit 2. The utilization the counterpoint mark counterpoints, namely, the counterpoint mark aligns with the reference mark formed in advance on the mask plate, so that when the holding groove is formed, the orthographic projection of the holding groove towards the substrate 1 is mesh projection, and the inner boundary of the mesh projection aligns with the boundary of the photoelectric detection unit 3.
As another aspect of the present invention, a fingerprint identification device is provided, which includes the array substrate provided by the present invention. The quantity of light received by the photoelectric conversion unit in the array substrate is increased, so that the signal to noise ratio is increased, and the identification effect of the fingerprint identification device utilizing the array substrate is more accurate.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (7)
1. An array substrate comprising a substrate and a self-luminous unit and a plurality of photodetecting units disposed on the substrate, characterized in that an orthographic projection of each of the photodetecting units on the substrate is surrounded by an orthographic projection of the self-luminous unit on the substrate;
the self-luminous unit comprises a plurality of first luminous parts extending along a plurality of first directions and a plurality of second luminous parts extending along a second direction, the first luminous parts and the second luminous parts are mutually crossed to form a net-shaped structure, the net-shaped structure forms a net-shaped projection on the substrate, the photoelectric detection units are in one-to-one correspondence with grids of the net-shaped projection, and the orthographic projection of each photoelectric detection unit towards the substrate is positioned in the corresponding grid; the boundary of the orthographic projection of the photoelectric detection unit towards the substrate is superposed with the inner boundary of the grid corresponding to the photoelectric detection unit; the photoelectric detection device comprises a substrate, and is characterized in that a passivation layer, thin film transistors in one-to-one correspondence with photoelectric detection units and first electrodes connected between the thin film transistors and the photoelectric detection units are further arranged on the substrate, a part of the first electrodes is arranged on drain electrodes of the thin film transistors, through holes are formed in the passivation layer, the through holes correspond to the parts of the first electrodes, which are not in contact with the drain electrodes, and the photoelectric detection units are arranged in the through holes.
2. The array substrate of claim 1, wherein the self-light emitting unit is located on one side of the substrate facing the light emitting direction, and the photo-detection unit is located on the other side of the substrate facing away from the light emitting direction.
3. The array substrate according to claim 1, wherein the photodetecting unit is located on a side of the first electrode facing away from the substrate, and a second electrode is further disposed on a surface of the photodetecting unit facing away from the substrate.
4. A manufacturing method of an array substrate is characterized by comprising the following steps:
providing a substrate;
forming a plurality of photodetecting units on the substrate;
forming a self-luminous unit on the substrate, wherein the orthographic projection of each photoelectric detection unit on the substrate is surrounded by the orthographic projection of the self-luminous unit on the substrate;
the self-luminous unit comprises a plurality of first luminous parts extending along a first direction and a plurality of second luminous parts extending along a second direction, the first luminous parts and the second luminous parts are mutually crossed to form a net-shaped structure, the net-shaped structure forms a net-shaped projection on the substrate, the photoelectric detection units are in one-to-one correspondence with grids of the net-shaped projection, and the orthographic projection of each photoelectric detection unit towards the substrate is positioned in the corresponding grid; the boundary of the orthographic projection of the photoelectric detection unit towards the substrate is superposed with the inner boundary of the grid corresponding to the photoelectric detection unit;
the manufacturing method further comprises the following steps: a passivation layer, thin film transistors corresponding to the photoelectric detection units one by one and first electrodes connected between the thin film transistors and the photoelectric detection units are formed on the substrate, a part of the first electrodes is arranged on drain electrodes of the thin film transistors, via holes are formed on the passivation layer, the via holes correspond to the parts of the first electrodes which are not in contact with the drain electrodes, and the photoelectric detection units are arranged in the via holes.
5. The manufacturing method of claim 4, wherein the self-light-emitting unit is located on one side of the substrate facing the light-emitting direction, and the photo-detection unit is located on the other side of the substrate facing away from the light-emitting direction.
6. The method of claim 5, further comprising, before the step of forming the photodetecting unit on the substrate: forming a plurality of thin film transistors and alignment marks, wherein the thin film transistors correspond to the photoelectric detection units one by one, and the alignment marks are positioned on the edge of the array substrate;
forming transparent first electrodes corresponding to the thin film transistors one by one, wherein one part of each first electrode is arranged on the drain electrode of the corresponding thin film transistor;
the step of forming the photodetecting unit further comprises:
forming a second electrode on the surface of the photoelectric detection unit, which is far away from the substrate;
the step of forming the self-light emitting unit on the substrate is performed after the step of forming the photo-detection unit, and in the process of forming the self-light emitting unit, alignment is performed using the alignment marks so that a boundary of an orthographic projection of the photo-detection unit toward the substrate coincides with an inner boundary of a mesh to which the photo-detection unit corresponds.
7. A fingerprint identification device comprising the array substrate of any one of claims 1 to 3.
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| CN109920814B (en) | 2019-03-12 | 2022-10-04 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method and display device |
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| CN103512595A (en) * | 2011-07-19 | 2014-01-15 | 赫普塔冈微光有限公司 | Opto-electronic module and method of manufacturing the same and appliance and device comprising the same |
| CN105981039A (en) * | 2013-11-22 | 2016-09-28 | 深圳市汇顶科技股份有限公司 | Secure human fingerprint sensor |
| CN106096595A (en) * | 2016-08-08 | 2016-11-09 | 京东方科技集团股份有限公司 | A kind of fingerprint recognition module, its manufacture method and fingerprint recognition display device |
| CN106292108A (en) * | 2016-09-08 | 2017-01-04 | 京东方科技集团股份有限公司 | A kind of array base palte and display floater |
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