CN110957387A - Electrode structure of high-efficiency solar cell suitable for step-by-step printing - Google Patents
Electrode structure of high-efficiency solar cell suitable for step-by-step printing Download PDFInfo
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- CN110957387A CN110957387A CN201911344808.0A CN201911344808A CN110957387A CN 110957387 A CN110957387 A CN 110957387A CN 201911344808 A CN201911344808 A CN 201911344808A CN 110957387 A CN110957387 A CN 110957387A
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- 238000007639 printing Methods 0.000 title claims abstract description 89
- 238000003466 welding Methods 0.000 claims abstract description 39
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 60
- 229910052709 silver Inorganic materials 0.000 claims description 48
- 239000004332 silver Substances 0.000 claims description 48
- 239000011521 glass Substances 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 239000000654 additive Substances 0.000 claims description 6
- 230000000996 additive effect Effects 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 3
- 230000001360 synchronised effect Effects 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 description 14
- 239000002002 slurry Substances 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 9
- 230000006872 improvement Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention discloses an electrode structure of a high-efficiency solar cell suitable for step-by-step printing, which comprises a main grid and a fine grid, wherein the main grid is connected with the fine grid; the main grid comprises a main grid line of a welding area and a main grid lapping structure; the thin grid comprises thin grid lines and a thin grid lapping structure for connecting two adjacent thin grid lines, the distance between two adjacent main grids is the distance between the main grid lapping structures, the distance between the main grid lapping structures is matched with the length of the thin grid lines, the main grid lapping structures and the thin grid lapping structures are in crossed overlapping printing, and at least two crossed overlapping printing intersection points are formed on two sides of each main grid and two sides of each thin grid line. The invention effectively avoids the problems of poor appearance and EL caused by the offset of the existing step-by-step printing contraposition and poor printing of parallel overlapping printing at the lap joint, and simultaneously avoids the problem of component end welding caused by poor lap joint of the main grid and the fine grid of the battery.
Description
Technical Field
The invention relates to the field of manufacturing of solar cells, in particular to an electrode structure of a high-efficiency solar cell suitable for step-by-step printing.
Background
In recent years, the mainstream products of solar cells have been shifted from traditional cells to high-efficiency PERC cells, and as the conversion efficiency of cell products tends to be bottleneck and the production process is matured continuously, the continuous cost reduction and efficiency improvement of solar cells face huge challenges.
In the non-silicon cost of the current solar cell production, the silver paste cost is the dominant role of the anode. There are three main methods for printing electrodes: (1) single screen printing technology; (2) and (3) secondary printing technology: the fine grids are printed first and then the main fine grids are printed again together. (3) Step-by-step printing technology: the main grid and the fine grid are printed separately.
As shown in fig. 1, a printing pattern of single screen printing is composed of a main grid 1, a gradual change structure 2 between main fine grids and fine grids 3, the cost of the solar cell is difficult to reduce due to the limitation of a single screen printing plate, and the reliability of the cell is difficult to meet the requirement by adopting the single screen printing technology;
as shown in fig. 2A, 2B and 2C, the second printing is performed, in which the fine grid 3 (as shown in fig. 2A) is printed first in the first step, the main fine grid (as shown in fig. 2B) is printed in the second step, and the main fine grid pattern printed in the second step is overlapped with the fine grid pattern printed in the first step, so as to obtain a second printed pattern (as shown in fig. 2C) with the same pattern. The secondary printing technology can effectively improve the efficiency of the solar cell, but the printing of the solar cell needs accurate alignment, the problems of printing yield, printing reliability, printing unit consumption and the like cannot be effectively solved, and the mass production difficulty is high.
As shown in fig. 3A, 3B and 3C, the step-by-step printing adopts a main grid and fine grid separated printing mode, and in the first step, a main grid pattern (as shown in fig. 3A) with a main grid 1 and a main fine grid gradient structure 2 is printed; and then printing a fine grid pattern with the fine grid 3 and the main grid positions hollowed out (as shown in figure 3B), thereby forming a front grid line (as shown in figure 3C) consistent with the single-time printing pattern. The step printing technology can effectively improve the efficiency of the solar cell and reduce the production cost, but the prior step printing design also has the problems of printing contraposition deviation, poor weldability of the cell module end and the like.
Disclosure of Invention
The invention aims to solve the technical problem of providing an electrode structure of a high-efficiency solar cell suitable for step-by-step printing, effectively avoiding the problems of poor appearance and EL caused by the offset of step-by-step printing and poor printing of parallel overlapping at a lap joint, and simultaneously avoiding the problem of welding of a component end caused by poor lap joint of a main grid and a fine grid of the cell.
In order to solve the technical problem, the invention provides an electrode structure of a high-efficiency solar cell suitable for step-by-step printing, which comprises a main grid and a fine grid, wherein the main grid is connected with the fine grid;
the main grid comprises a main grid line of a welding area and a main grid lapping structure, the main grid lapping structure is connected with the main grid line of the welding area, and the width of the main grid lapping structure is gradually reduced from the position close to the main grid line of the welding area to the position far away from the main grid line of the welding area;
the fine grid comprises fine grid lines and a fine grid lapping structure for connecting two adjacent fine grid lines, one end of each fine grid line is connected with the fine grid lapping structure to form a closed structure, and the other end of each fine grid line is connected with the fine grid lapping structure to form a closed structure or an open structure;
the distance between two adjacent main grids is the distance between the main grid lapping structures, the distance between the main grid lapping structures is matched with the length of the thin grid lines, the main grid lapping structures and the thin grid lapping structures are overlapped in an intersecting mode, and at least two intersecting overlapping points are formed on two sides of each main grid and two sides of each thin grid line.
As an improvement of the scheme, the main grid is formed by non-burn-through type silver paste printing, and the fine grid is formed by burn-through type silver paste printing.
As an improvement of the scheme, the non-burn-through silver paste consists of silver powder, silver-coated copper powder, glass powder, an additive and an organic carrier;
the fire-through silver paste is composed of silver powder, glass powder and an organic carrier.
As an improvement of the scheme, the non-burn-through silver paste consists of 55-80% of silver powder, 15-40% of silver-coated copper powder, 1-3% of glass powder, 1-3% of an additive and 1-3% of an organic carrier;
the fire-through silver paste is composed of 94-98% of silver powder, 1-3% of glass powder and 1-3% of organic carrier.
As an improvement of the scheme, the main grid lapping structure is triangular, trapezoidal, semicircular or semi-elliptical;
the fine grid lapping structure is in a straight shape, a V shape, a U shape, a semi-circle shape or a semi-ellipse shape.
As an improvement of the above scheme, the main gate overlapping structure is triangular, the fine gate overlapping structure is V-shaped, the main gate overlapping structure and the fine gate overlapping structure are overlapped in an intersecting manner, and two sides of each main gate and two sides of each fine gate line form an intersection point of the two intersecting overlaps.
As an improvement of the scheme, the main grid line and the main grid lapping structure of the welding area are synchronously printed and formed;
and the fine grid line and the fine grid lapping structure are formed by synchronous printing.
As an improvement of the scheme, the number of the main grid lines is 4-20, the main grid lines are distributed at equal intervals, the line width of the main grid line of the welding area is 10-1000 microns, and the width of the main grid lapping structure is 10-2000 microns;
the line width of the fine grid lines is 10-100 mu m, the fine grid spacing is 10-2000 mu m, and the fine grid lines are distributed at equal intervals; the line width of a fine grid lapping structure connecting two adjacent fine grid lines is 10-300 mu m;
as an improvement of the scheme, the main grid lapping structure is hollowed;
or the main grid overlapping structure is solid.
The implementation of the invention has the following beneficial effects:
the main grid pattern comprises a welding area main grid line and a main grid lapping structure, wherein the fine grid comprises a fine grid line and a fine grid lapping structure for connecting two adjacent fine grid lines, and the main grid line width, the main grid lapping structure interval and the fine grid line length of the welding area are matched, so that two adjacent fine grid lines can be simultaneously crossed and overlapped with the main grid lapping structure from two sides to form at least two intersection points, and thus two sides of each main grid and two sides of each fine grid line form at least two crossed and overlapped intersection points. Compared with the existing scheme of main grid gradual change and fine grid single-point lapping, the method has the advantages of higher precision fault tolerance rate of step-by-step printing alignment errors, better lapping reliability, and capability of effectively reducing the problems of poor appearance and poor EL caused by step-by-step printing lapping offset.
The invention adopts the main grid slurry to print the main grid lapping structure, can effectively prevent the influence of the broken grid of the fine grid on the current transmission, and can avoid the influence of the lapping part to the welding performance of the component end because the lapping part is far away from the main grid welding area. In addition, the main grid is made of non-burn-through silver paste which is good in weldability, high in adhesive force and low in cost, the damage of a passivation film in the main grid region can be avoided while the welding reliability of the solar cell is guaranteed, and the open-circuit voltage of the solar cell can be effectively improved, so that the conversion efficiency is improved; the thin grid is made of the burn-through silver paste which is high in printing performance and good in shaping performance, the front contact of the thin grid with the front of a battery piece is guaranteed, meanwhile, the transmission current loss and the front shading loss can be reduced, the short-circuit current and the filling factor of the solar battery are effectively improved, and therefore the conversion efficiency is improved.
Drawings
FIG. 1 is a diagram of the effect of a grid line obtained by a single screen printing in the prior art;
FIG. 2A is a schematic diagram of a conventional secondary printing process for printing a fine grid;
FIG. 2B is a schematic diagram of a conventional secondary printing process for printing a primary fine grid;
FIG. 2C is a diagram of the effect of the gate line obtained by the conventional secondary printing;
FIG. 3A is a schematic illustration of a prior art step printing process for printing a master grid;
FIG. 3B is a schematic illustration of a prior art step printing process for printing a fine grid;
FIG. 3C is a graph of the effect of a prior art step printing on a grid line;
FIG. 4A is a schematic diagram of the structure of the main gate of the present invention;
FIG. 4B is a schematic diagram of a fine grid according to the present invention;
FIG. 4C is a schematic structural view of an electrode structure of the present invention;
FIG. 5 is a partial enlarged view of portion A shown in FIG. 4C;
fig. 6 is another schematic structure of the main gate of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below.
The invention provides an electrode structure of a high-efficiency solar cell suitable for step-by-step printing, which comprises a main grid 1 and a fine grid 3, wherein the main grid 1 is connected with the fine grid 3, preferably vertically connected with the fine grid, and the electrode structure comprises:
as shown in fig. 4A, the main gate 1 includes a land main gate line 11 and a main gate overlap structure 12, and the main gate overlap structure 12 is connected to the land main gate line 11.
The width a of the main grid lapping structure 12 gradually decreases from the direction close to the main grid line 11 of the welding area to the direction far away from the main grid line 11 of the welding area, the using amount of main grid slurry can be effectively reduced, the lapping part is far away from the main grid welding area, and the influence of the lapping part on the welding performance of the component end can be avoided. In addition, the invention adopts the main grid slurry to print the main grid lapping structure, thereby effectively preventing the influence of the broken grid of the fine grid on the current transmission.
The main grid paste is filled in the main grid line 11 of the welding area, and the main grid line can be designed according to specific requirements of products, such as hollow, narrowing of non-welding point areas, and optimization of the tip or branch structure of series welding stress at two ends of the main grid.
As shown in fig. 4B, the thin gate 3 includes a thin gate line 31 and a thin gate overlapping structure 32 connecting two adjacent thin gate lines 31, and the land main gate line 11 and the thin gate line 31 are perpendicular to each other. After the main gate 1 and the fine gate 3 are printed, an effect diagram of the gate line of fig. 4C is formed.
One end of the fine gate line 31 is connected with the fine gate overlapping structure 32 to form a closed structure, and the other end of the fine gate line 31 is connected with the fine gate overlapping structure 32 to form a closed structure or an open structure. Specifically, with reference to fig. 4B, the three-dimensional grid structure includes four parts of a fine grid, which are a fine grid i part, a fine grid ii part, a fine grid iii part, and a fine grid iv part from left to right in sequence, and the middle hollow part corresponds to the position of the main grid. One end of each of the thin grid lines 31 of the thin grid I part and the thin grid IV part is connected with the thin grid lapping structure 32 to form a closed structure, and the other end of each of the thin grid lines is an open structure; two ends of the thin grid line 31 of the thin grid II part and the thin grid III part are connected with the thin grid lapping structure 32 to form a closed structure.
The distance between two adjacent main grids 1 is a main grid lapping structure distance b, the main grid lapping structure distance b is matched with the length of the thin grid lines 31, the main grid lapping structure 12 and the thin grid lapping structure 32 are overlapped in an intersecting mode, two adjacent thin grid lines can be overlapped with the main grid lapping structure from two sides to form at least two intersection points, and therefore two sides of each main grid and two sides of each thin grid line form intersection points of at least two intersecting overlapping prints. Compared with the existing scheme of main grid gradual change and fine grid single-point lapping, the method has the advantages of higher precision fault tolerance rate of step-by-step printing alignment errors, better lapping reliability, and capability of effectively reducing the problems of poor appearance and poor EL caused by step-by-step printing lapping offset.
Preferably, the number of the main gates 1 is 4-20, the main gates are distributed at equal intervals, the line width of the main gate line 11 of the welding region is 10-1000 μm, and the width of the main gate lapping structure 12 is 10-2000 μm; the line width of the fine grid lines 31 is 10-100 mu m, the fine grid spacing is 10-2000 mu m, and the fine grid lines are distributed at equal intervals; the line width of the fine gate lapping structure 32 connecting two adjacent fine gate lines 31 is 10-300 μm;
the shapes of the main grid overlapping structure 12 and the fine grid overlapping structure 32 have various embodiments, and the main grid overlapping structure 12 is preferably triangular, trapezoidal, semicircular or semi-elliptical; the fine grid overlapping structure 32 is preferably in a straight line shape, a V shape, a U shape, a groove shape, a semi-circle shape or a semi-ellipse shape, but is not limited thereto. Preferably, the main grid overlapping structure 12 is an isosceles triangle, an isosceles trapezoid, an arc, a semicircle or a semi-ellipse; the fine-grid overlapping structure 32 is preferably in a straight line shape, a V shape or an isosceles groove shape. Preferably, the main gate overlapping structure 12 is triangular, the fine gate overlapping structure 32 is V-shaped, and the main gate overlapping structure 12 and the fine gate overlapping structure 32 are overlapped in an intersecting manner, so that two adjacent fine gate lines can be overlapped in an intersecting manner from two sides to the main gate overlapping structure to form at least two intersection points, so that two sides of each main gate and two sides of each fine gate line form two intersection points of the intersecting overlapping, and better overlapping reliability is realized.
It should be noted that, in the embodiment shown in fig. 4A, 4B, and 4C, the main gate overlapping structure 12 is triangular, and the fine gate overlapping structure 32 is V-shaped.
Wherein the length range of the bottom side of the isosceles triangle main grid lapping structure is 10-2000 mu m, and the angle range of the vertex angle is 20-160 degrees; the length range of the bottom edge of the isosceles trapezoid main grid lapping structure is 10-2000 mu m, and the included angle between the bottom edge and the waist is 20-90 degrees; the diameter range of the semicircular main grid lapping structure is 10-2000 mu m; the length range of the intersection point of the semi-elliptic main grid lapping structure and the main grid line 11 of the welding area is 10-2000 mu m.
The length of the linear fine grid lapping structure 32 is the fine grid distance; the included angle of the V-shaped fine grid lapping structure 32 ranges from 20 degrees to 160 degrees; the length range of the bottom edge of the isosceles groove-shaped fine grid lapping structure 32 is 10-2000 mu m, and the included angle between the bottom edge and the waist is 90-160 degrees; the diameter range of the semicircular fine grid lapping structure 32 is 10-2000 mu m; the length range of the intersection point of the semi-elliptical fine grid lapping structure 32 and the fine grid line is 10-2000 mu m;
as shown in fig. 5, the main grid overlapping structure 12 is preferably hollow, and the pattern is not filled with slurry, so that the amount of the slurry used for the main grid can be effectively reduced, and two intersection points are formed at the intersection of the hollow main grid overlapping structure 12 and the fine grid overlapping structure 32, thereby further ensuring the reliability of overlapping.
As shown in fig. 6, the present invention provides another embodiment of a main grid, which is different from the main grid shown in fig. 4A in that the main grid overlapping structure 12 is provided as a solid, and a pattern thereof is filled with a slurry.
The main grid line and the main grid lapping structure of the welding area are synchronously printed, the fine grid line and the fine grid lapping structure are synchronously printed, and the printing steps can be simplified.
The main grid is made of non-burn-through silver paste which is good in weldability, high in adhesive force and low in cost, the welding reliability of the solar cell is guaranteed, meanwhile, a passivation film in the main grid region can be prevented from being damaged, and the open-circuit voltage of the solar cell can be effectively improved, so that the conversion efficiency is improved; the thin grid is made of burn-through silver paste with high printing performance and good shaping performance, the front contact of the thin grid with a battery piece is guaranteed, meanwhile, the transmission current loss and the front shading loss can be reduced, the short-circuit current and the filling factor of the solar battery are effectively improved, and therefore the conversion efficiency is improved.
Specifically, the non-fire-through silver paste consists of silver powder, silver-coated copper powder, glass powder, an additive and an organic carrier. The non-burn-through silver paste is used for printing the main grid, can only realize the function of current transmission, does not damage a passivation dielectric film under the main grid, avoids causing redundant recombination, and improves the open-circuit voltage of the battery. Meanwhile, as the silicon solar cell and the auxiliary grid are printed separately, the height of the auxiliary grid does not need to be considered, more optimization can be carried out on a screen printing plate, the using amount of slurry is reduced, and the series welding reliability is improved, so that the manufacturing cost of the crystalline silicon solar cell is reduced, and the reliability of the solar cell is improved. The using amount of each component of the non-burn-through silver paste can be designed according to actual conditions, and preferably, the non-burn-through silver paste consists of 55-80% of silver powder, 15-40% of silver-coated copper powder, 1-3% of glass powder, 1-3% of an additive and 1-3% of an organic carrier.
The fire-through silver paste is composed of silver powder, glass powder and an organic carrier. The traditional single-time printing paste adopts burn-through type paste, can penetrate through a passivated antireflection film to form contact with the front surface of a solar cell to lead out current, and meanwhile maintains better printing line type and good printing reliability. The invention selects the fire-through silver paste which can optimize the printing line type and the contact performance to match with the non-fire-through main grid, to achieve the best effect. The using amount of each component of the burn-through type silver paste can be designed according to actual conditions, and preferably, the burn-through type silver paste is composed of 94-98% of silver powder, 1-3% of glass powder and 1-3% of organic carriers.
The invention is further illustrated by the following specific examples
Example 1
156.75 by 156.75mm size cells were used;
printing a main grid 1 on the front surface of a battery according to a main grid pattern, wherein the main grid 1 comprises a welding area main grid line 11 and a main grid lapping structure 12, the width of the welding area main grid line 11 is 700 mu m, the main grid lapping structure 12 is an isosceles triangle, the side length of the triangle is 713.5 mu m, the vertex angle is 60 degrees, the paste for printing the main grid adopts non-burn-through silver paste, and the screen printing plate is a 325-mesh screen printing plate;
printing a fine grid 3 according to a fine grid pattern, wherein the fine grid 3 comprises fine grid lines 31 and a fine grid lapping structure 32 for connecting two adjacent fine grid lines 31, the width of each fine grid line 31 is 30 micrometers, the fine grid lapping structure 32 is V-shaped, the line width of each fine grid lapping structure is 100 micrometers, and slurry for printing the fine grids adopts fire-through silver paste;
the integrated silver consumption of the printed front electrode of example 1 was 11mg lower than that of a single printed silver, the average conversion efficiency was improved by 0.124%, mainly reflected in that the open circuit voltage was improved by 2.5mV, and the short circuit current was improved by 38 mA; compared with the traditional single-time printing main grid tension, the main grid tension mean value of the step-by-step printing battery is 1-2N higher.
Example 2
Cells of 158.75 by 158.75mm size were used;
printing a main grid 1 on the front surface of a battery according to a main grid pattern, wherein the main grid 1 comprises a welding area main grid line 11 and a main grid lapping structure 12, the width of the welding area main grid line 11 is 700 mu m, the main grid lapping structure 12 is an isosceles triangle, the side length of the triangle is 722.7 mu m, the vertex angle is 60 degrees, the paste for printing the main grid adopts non-burn-through silver paste, and the screen printing plate is a 325-mesh screen printing plate;
printing a fine grid 3 according to a fine grid pattern, wherein the fine grid 3 comprises fine grid lines 31 and a fine grid lapping structure 32 for connecting two adjacent fine grid lines 31, the width of each fine grid line 31 is 30 micrometers, the fine grid lapping structure 32 is groove-shaped, the length of the top edge is 481.8 micrometers, the included angle between the top edge and the waist edge is 120 degrees, and the line width of the fine grid lapping structure is 100 micrometers; the paste for printing the fine grid adopts burn-through type silver paste;
the integrated silver consumption of the printed front electrode of example 2 is 12.3mg lower than that of single printed silver, the average conversion efficiency is improved by 0.132%, mainly reflected in that the open circuit voltage is improved by 2.5mV, and the short circuit current is improved by 39 mA; compared with the traditional single-time printing main grid tension, the main grid tension mean value of the step-by-step printing battery is 1-2N higher.
Example 3
161.7 × 161.7mm size batteries were used;
printing a fine grid 3 on the front surface of the battery according to a fine grid pattern, wherein the fine grid 3 comprises fine grid lines 31 and a fine grid lapping structure 32 for connecting two adjacent fine grid lines 31, the width of each fine grid line 31 is 30 micrometers, the fine grid lapping structure 32 is V-shaped, the line width of each fine grid lapping structure is 100 micrometers, and slurry for printing the fine grids is made of fire-through silver paste;
printing a main grid 1 according to a main grid pattern, wherein the main grid 1 comprises a welding area main grid line 11 and a main grid lapping structure 12, the width of the welding area main grid line 11 is 700 mu m, the main grid lapping structure 12 is an isosceles trapezoid, the length of the bottom edge of the isosceles trapezoid is 736.2 mu m, the included angle between the bottom edge and the waist edge is 60 degrees, the paste for printing the main grid adopts a non-burn-through type, and the silver paste screen is a 325-mesh screen printing screen;
the integrated silver consumption of the printed front electrode of example 3 was 13.5mg lower than that of a single printed silver, the average conversion efficiency was improved by 0.152%, mainly reflected in that the open circuit voltage was improved by 2.7mV, and the short circuit current was improved by 43 mA; compared with the traditional single-time printing main grid tension, the main grid tension mean value of the step-by-step printing battery is 1-2N higher.
Example 4
161.7 × 161.7mm size batteries were used;
printing a fine grid 3 on the front surface of a battery according to a fine grid pattern, wherein the fine grid 3 comprises fine grid lines 31 and a fine grid lapping structure 32 for connecting two adjacent fine grid lines 31, the width of each fine grid line 31 is 30 micrometers, the fine grid lapping structure 32 is groove-shaped, the length of the top edge is 504 micrometers, the included angle between the top edge and the waist edge is 120 degrees, the line width of the fine grid lapping structure is 100 micrometers, and slurry for printing the fine grid adopts burn-through type silver paste;
printing a main grid 1 according to a main grid pattern, wherein the main grid 1 comprises a welding area main grid line 11 and a main grid lapping structure 12, the width of the welding area main grid line 11 is 700 mu m, the main grid lapping structure 12 is an isosceles trapezoid, the length of the bottom edge of the isosceles trapezoid is 756 mu m, the included angle between the bottom edge and the waist edge is 60 degrees, the paste for printing the main grid adopts a non-burn-through type silver paste screen printing plate, and the screen printing plate is a 325-mesh silver paste screen printing plate;
the integrated silver consumption of the printed front electrode of example 4 is 14.7mg lower than that of a single printed silver, the average conversion efficiency is improved by 0.165%, mainly reflected in that the open circuit voltage is improved by 2.8mV, and the short circuit current is improved by 48 mA; and step-by-step printing adopts high-reliability main grid slurry, so that the main grid tension mean value of the step-by-step printed battery is 1-2N higher than that of the traditional single main grid printing.
While the invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not to be limited to the disclosed embodiment, but on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
Claims (10)
1. The electrode structure of the high-efficiency solar cell suitable for step-by-step printing is characterized by comprising a main grid and a fine grid, wherein the main grid is connected with the fine grid;
the main grid comprises a main grid line of a welding area and a main grid lapping structure, the main grid lapping structure is connected with the main grid line of the welding area, and the width of the main grid lapping structure is gradually reduced from the position close to the main grid line of the welding area to the position far away from the main grid line of the welding area;
the fine grid comprises fine grid lines and a fine grid lapping structure for connecting two adjacent fine grid lines, one end of each fine grid line is connected with the fine grid lapping structure to form a closed structure, and the other end of each fine grid line is connected with the fine grid lapping structure to form a closed structure or an open structure;
the distance between two adjacent main grids is the distance between the main grid lapping structures, the distance between the main grid lapping structures is matched with the length of the thin grid lines, the main grid lapping structures and the thin grid lapping structures are overlapped in an intersecting mode, and at least two intersecting overlapping points are formed on two sides of each main grid and two sides of each thin grid line.
2. The electrode structure of claim 1, wherein the main grid is formed by non-fire through silver paste printing, and the fine grid is formed by fire through silver paste printing.
3. The electrode structure of a high-efficiency solar cell suitable for step-by-step printing according to claim 2, wherein the non-fire through silver paste is composed of silver powder, silver-coated copper powder, glass powder, an additive and an organic vehicle;
the fire-through silver paste is composed of silver powder, glass powder and an organic carrier.
4. The electrode structure of a high-efficiency solar cell suitable for step-by-step printing according to claim 3, wherein the non-fire through silver paste consists of 55-80% of silver powder, 15-40% of silver-coated copper powder, 1-3% of glass powder, 1-3% of additive and 1-3% of organic carrier;
the fire-through silver paste is composed of 94-98% of silver powder, 1-3% of glass powder and 1-3% of organic carrier.
5. The electrode structure suitable for high efficiency solar cells printed step by step as claimed in claim 1, wherein the main grid lap joint structure is triangular, trapezoidal, semicircular or semi-elliptical;
the fine grid lapping structure is in a straight shape, a V shape, a U shape, a semi-circle shape or a semi-ellipse shape.
6. The electrode structure of claim 5, wherein the main grid overlapping structure is triangular, the fine grid overlapping structure is V-shaped, the main grid overlapping structure and the fine grid overlapping structure are overlapped in an intersecting manner, and both sides of each main grid and both sides of each fine grid line form an intersection point of the two overlapping overlaps in an intersecting manner.
7. The electrode structure for a high efficiency solar cell suitable for step-by-step printing as claimed in claim 1, wherein the land grid line and the main grid lap joint structure are printed simultaneously;
and the fine grid line and the fine grid lapping structure are formed by synchronous printing.
8. The electrode structure of a high-efficiency solar cell suitable for step-by-step printing as claimed in claim 1, wherein the number of the main grid lines is 4-20, the main grid lines are equidistantly distributed, the line width of the main grid lines in the welding area is 10-1000 μm, and the width of the main grid lapping structure is 10-2000 μm.
9. The electrode structure of a high-efficiency solar cell suitable for step-by-step printing according to claim 1, wherein the line width of the fine grid lines is 10-100 μm, the fine grid pitch is 10-2000 μm, and the fine grid lines are distributed at equal intervals; the line width of the fine grid lapping structure connecting two adjacent fine grid lines is 10-300 mu m.
10. The electrode structure of claim 1, wherein the main grid overlapping structure is hollowed out;
or the main grid overlapping structure is solid.
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