CN1109555A - Device and method for judging deterioration of silicon control - Google Patents
Device and method for judging deterioration of silicon control Download PDFInfo
- Publication number
- CN1109555A CN1109555A CN94116278A CN94116278A CN1109555A CN 1109555 A CN1109555 A CN 1109555A CN 94116278 A CN94116278 A CN 94116278A CN 94116278 A CN94116278 A CN 94116278A CN 1109555 A CN1109555 A CN 1109555A
- Authority
- CN
- China
- Prior art keywords
- signal
- controllable silicon
- voltage
- silicon
- grid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
- F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
- F02P17/00—Testing of ignition installations, e.g. in combination with adjusting; Testing of ignition timing in compression-ignition engines
- F02P17/12—Testing characteristics of the spark, ignition voltage or current
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/263—Circuits therefor for testing thyristors
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
- F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
- F02P17/00—Testing of ignition installations, e.g. in combination with adjusting; Testing of ignition timing in compression-ignition engines
- F02P17/12—Testing characteristics of the spark, ignition voltage or current
- F02P2017/121—Testing characteristics of the spark, ignition voltage or current by measuring spark voltage
Abstract
The invention discloses a determination device and a method for controllable silicon deterioration. A device determining the deterioration of controllable silicon is not known in the past and a protection circuit is added to the controllable silicon instead. According to the invention, no matter a grid signal exerted a controllable silicon grid is off or not, as long as the controllable silicon is not in conducting state and the voltage between the grid and a negative electrode exceeds a stipulated threshold value, the controllable silicon can be determined to be deteriorated. The deterioration determination device and the method are very suitable to be used as a security device for an ignition device of a moped engine.
Description
The present invention relates to deterioration of silicon control decision maker and method thereof.This deterioration judging device is applicable to ignition device for internal combustion.
As everyone knows, controllable silicon can be as the various electrical equipment control devices of purposes such as the various switching devices of purposes such as rectification or phase control.But, this controllable silicon generally adds just (+) current potential and negative (-) current potential respectively at anode and negative electrode, by add grid voltage between grid and negative electrode, possesses the function that changes on state from forward blocking (nonconducting state) into.The sequential that adds this grid voltage (signal) is different because of various uses, but before this signal arrives, during promptly signal be " breaking ", the forward blocking of maintenance afore mentioned rules be normal state.But because of using all the year round, cause the characteristic variation,, can not keep the forward blocking function stipulated, cause short circuit etc. even if signal is for disconnected sometimes.Just might cause various parts, load etc. to be damaged when accident such as being short-circuited with the controllable silicon forming circuit.Therefore, guard against deterioration of silicon control in the past, add that various protective circuits being set, but still do not know to judge in early days the method and apparatus of this deterioration of silicon control state.
One of purpose of the present invention is to provide a kind of cheap deterioration of silicon control decision maker that addresses the above problem.
Another object of the present invention is to provide the ignition mechanism of the internal-combustion engine with this deterioration judging circuit.
The controllable silicon that deterioration judging dress of the present invention is suitable for adds direct current or alternating voltage (first voltage) between its anode (second electrode) and negative electrode (first electrode).For example alternately add " leading to " signal and " breaking " signal on the silicon controlled grid.When added signal is aforementioned " leading to " signal on the grid, be on state between silicon controlled anode and the negative electrode, flow through direct current or alternating current (a.c.) between the two.And signal is in nonconducting state when being aforementioned " breaking " signal between controllable silicon anode and the negative electrode, just do not have direct current or alternating current (a.c.) to flow through between the two.This signal is detected by signal testing circuit (first detection device), and first signal corresponding with " leading to " signal and " breaking " signal exports decision circuit (decision maker) to.
When signal was " leading to " signal, controllable silicon was in nonconducting state, thereby did not have electric current to flow through between grid and the negative electrode, thus voltage between the two actual be 0., during deterioration of silicon control, there is electric current to flow through between the two, produces voltage (second voltage) therebetween.Be conceived to this drain voltage among the present invention, when it surpasses defined threshold (being 0.4V among the embodiment), promptly judged deterioration of silicon control.That is to say,, when the voltage between grid and negative electrode surpasses the threshold voltage of regulation, promptly judge deterioration of silicon control although signal is " breaking " signal.For this reason, detect the voltage between grid and negative electrode by grid voltage testing circuit (second detection device), when this voltage surpassed respective threshold voltage, secondary signal was just exported to decision circuit.Decision circuit is judged deterioration of silicon control according to this secondary signal and same grid corresponding aforementioned first signal of signal that " breaks ".
The suitable safety installations of this deterioration judging device as the motor-helping car ignition device for internal combustion.
Fig. 1 is the pie graph of embodiment of the invention deterioration of silicon control decision maker.
Fig. 2 is the figure of explanatory drawing 1 device action.
Fig. 3 is the pie graph of engine ignitor.
Fig. 4 is the pie graph of ignition mechanism with embodiment of deterioration judging device.
Fig. 5 is the figure of explanatory drawing 4 device actions.
Fig. 6 is the pie graph of ignition mechanism with another embodiment of deterioration judging device.
Fig. 1 is the circuit diagram of one embodiment of the invention; S is silicon controlled equivalent constructions figure among the figure; A is an anode, and K is a negative electrode, and G is a grid; GC is a grid circuit from the signal in gap to the grid G of controllable silicon S that send; D0 is the gate protection diode, and GK is the voltage detecting circuit between controllable silicon grid G and negative electrode K, and IN is for detecting the signal testing circuit of signal by (not taking place); AND is for handling the circuit of two testing circuit GK, IN logic value, and PW is direct current or ac power supply.Voltage detecting circuit GK is operational amplifier specifically, the voltage V when between grid and negative electrode
GKThan reference voltage (0.4V is equivalent to threshold voltage) V
RHour, output negative signal, and reference voltage V
RVoltage V between≤grid and negative electrode
GKThe time, the output positive signal.
Followingly action is described with reference to Fig. 2.What at first Fig. 2 (a) solid line was represented is controllable silicon forward blocking characteristic, illustrate be with the anode A of controllable silicon S for just, negative electrode, has block function, and is voltage V when adding power supply PW for negative when being lower than assigned voltage
BOAbove voltage just is on state from triggering, and flows through electric current I A., controllable silicon begins variation, in the sectional view of controllable silicon S shown in Figure 1, can estimate, is reaching assigned voltage (V
BO) before, there is leakage current to flow out from keeping withstand voltage PN junction J2.Can think that this is equivalent to by the electric current of internal resistance r generation shown in the dotted line of (A) figure.Thereby the present invention detects grid and the voltage between negative electrode (Fig. 2 (B)) based on this leakage current by testing circuit GK.The grid voltage waveform (interruption) of following Fig. 2 (C) expression grid circuit GC.Also have Fig. 2 (D) to represent the inversion waveforms of this grid voltage that phase inverter IN causes.That is to say that signal is in " breaking " (break signal) state among the present invention, when having produced required voltage between grid and negative electrode, logical circuit " with " logic just set up, by producing the logical signal of Fig. 2 (e), judge the early stage deterioration of silicon controlled.When producing the logical signal of Fig. 2 (E), controllable silicon just has been judged to be deterioration.
Below explanation utilizes the applications of electronic circuitry example of decision circuit of the present invention.At first, shown in Fig. 3 is the circuit diagram that is referred to as the ignition device for internal combustion such as general two-wheel vehicle of capacitor charging/discharging ignition mechanism, D/D is the DC/DC transducer that cell voltage is boosted, D1 is a commutation diode, and C1 is the capacitor of savings electric charge, and PC is a pulse oscillator, GC is a gate circuit, S1 is a controllable silicon, and IG is a spark coil, and SP is an ignition plug.Voltage with the DC/DC converter boost is added on the capacitor C1 through diode D rectification, charges to capacitor C1 thus.And produce and the synchronous fire signal of motor by pulse oscillator PC, give controllable silicon S1 by gate circuit GC.Fire signal is a signal when being " leading to ", the electric charge of capacitor C1 just by controllable silicon S1 to spark coil IG discharge, make the ignition plug igniting.
Like this, igniting must be carried out synchronously with pulse signal usually.But owing to reasons such as silicon controlled deterioration of withstand voltage of elements, controllable silicon is the conducting with the pulse oscillator signal not, and phenomenons such as motor damage or reverse just may take place.Therefore, the method for in the past taking is a plurality of controllable silicons to be connected in series prevent deterioration of withstand voltage of elements.
Fig. 4 is one embodiment of the invention, and the composition identical with Fig. 1 and Fig. 3 gives same numeral, and part is omitted its explanation.Q1 is a transistor, and at first just often, as previously mentioned, whenever the arrival of pulse oscillator signal, promptly when signal was " leading to ", controllable silicon S1 continued the igniting of ignition plug SP with regard to conducting.This moment the controllable silicon each several part work wave as Fig. 5 (B)-(D) shown in the solid line.Below, suppose that controllable silicon is withstand voltage as Fig. 5 (A) dotted line variation, the waveform of controllable silicon each several part is then as Fig. 5 (B)-(D) shown in the dotted line.But at this moment rise with plate voltage VAK, silicon controlled grid voltage VGK a little 0.3V-0.4V that also rises, thereby after this voltage amplifies by GK, confirm not have the pulse oscillator signal, be that signal is " breaking " signal, (output that makes phase inverter IN output and operational amplifier GK mutually " with "), transistor Q1 is conducting.Thereby the D/D transducer stops its vibration, stops to charge to capacitor C1.Thus, silicon controlled plate voltage VAK stops to rise when Fig. 5 (A) ◎ point, can prevent deterioration of withstand voltage of elements and mis-ignition.
In the foregoing description, what the power supply of ignition mechanism was that the charging unit of capacitor adopts is the DC/DC transducer, but also can be as another employing generator shown in Figure 6 as power supply.Among Fig. 6, the composition identical with Fig. 4 embodiment put on identical symbol.EXT is the power coil of generator among the figure, and PC is the pulser generation coil that is built in this generator, and S2, S2 ' are controllable silicon.This circuit operation is a kind of like this mode, promptly exchanges the half cycle output of exporting by power coil EXT and makes diode D1 conducting, and to capacitor C1 charging, another half cycle output is then by diode D3 and ground short circuit.In this circuit, in case by with the decision signal of door AND output controllable silicon S1 deterioration, just conducting of controllable silicon S2, the output of generator EXT just and ground short circuit, to prevent capacitor C1 charging.
More than explanation is deterioration of silicon control decision circuit of the present invention to be used for the example of ignition mechanism, but should understand, can also be applicable to that other adopts the various machines of silicon controlled, and it also is possible utilizing deterioration signal to carry out various application such as alarm indication in addition.
As shown in the above description, according to the present invention, judge the early stage deterioration of silicon controlled by simple structure.And, deterioration of silicon control decision circuit of the present invention is applied to various electronic instruments, electrical equipment especially during ignition device for internal combustion, can improve their reliability with minimum cost.
Claims (17)
1, a kind of deterioration of silicon control decision maker is characterized in that comprising:
Between described controllable silicon anode and negative electrode, add the power supply of assigned voltage;
The grid circuit that adds signal at described silicon controlled grid;
Detect described signal, export the signal testing circuit of first signal;
Detect voltage between described controllable silicon grid and negative electrode, the grid voltage testing circuit of output secondary signal;
According to the secondary signal that first signal of described signal testing circuit output and described grid voltage testing circuit are exported, judge the whether circuit of deterioration of described controllable silicon.
2, a kind of deterioration of silicon control decision maker is added with first voltage of regulation between anode and negative electrode, it is characterized in that comprising:
Provide the device of signal to described controllable silicon grid, this signal is by making " leading to " signal of being on state between described controllable silicon anode and the negative electrode and " breaking " signal that is nonconducting state therebetween being formed;
Detect first detection device of described signal;
Detect second detection device of second voltage between described controllable silicon grid and the negative electrode;
Described first detection device detects described " breaking " signal, and described second detection device is judged the device of described deterioration of silicon control when detecting described second voltage and surpassing defined threshold voltage.
3, a kind of ignition device for internal combustion is charged to capacitor by capacitor charging apparatus, and the charging charge that makes this capacitor, is characterized in that comprising to the spark coil discharge by controllable silicon:
Deterioration judging device as claimed in claim 1;
When described deterioration judging device is judged described deterioration of silicon control, stop the charging halt circuit of described capacitor charging.
4, ignition mechanism as claimed in claim 3 is characterized in that described capacitor charging apparatus is the DC-DC transducer, and described charging halt circuit then makes the described transducer failure of oscillations.
5, ignition mechanism as claimed in claim 3 is characterized in that described charging halt circuit stops the output of described capacitor charging apparatus to offer described capacitor.
6, ignition mechanism as claimed in claim 5 is characterized in that described capacitor charging apparatus is a generator.
7, ignition mechanism as claimed in claim 5 is characterized in that described charging halt circuit makes the output and the ground short circuit of capacitor charging apparatus.
8, ignition mechanism as claimed in claim 5 is characterized in that described charging halt circuit makes between described capacitor charging apparatus and the described capacitor and is nonconducting state.
9, a kind of ignition device for internal combustion is characterized in that comprising:
Controllable silicon;
The capacitor that is connected with described controllable silicon;
Device to described capacitor charging;
The ignition plug of the electric charge igniting that obtains by described capacitor charging when described controllable silicon is on state;
By add the signal of regulation to described controllable silicon grid, control the device of described controllable silicon on state, this signal is by making described controllable silicon be " leading to " signal of on state and " breaking " signal that is in nonconducting state therebetween being formed;
Detect first detection device of described signal;
Detect second detection device of voltage between described controllable silicon grid and the negative electrode;
Described first detection device detects described " breaking " signal, and second detection device is judged the device of described deterioration of silicon control when detecting between described grid and negative electrode voltage and surpassing defined threshold voltage;
When described decision maker is judged described deterioration of silicon control, stop device to described capacitor charging.
10, ignition mechanism as claimed in claim 9 is characterized in that described capacitor charging apparatus is the DC-DC transducer, and described charging halt circuit makes the described transducer failure of oscillations.
11, ignition mechanism as claimed in claim 9 is characterized in that described charging halt circuit stops the output of described capacitor charging apparatus to give described capacitor.
12, ignition mechanism as claimed in claim 11 is characterized in that described capacitor charging apparatus is a generator.
13, ignition mechanism as claimed in claim 11 is characterized in that described charging halt circuit makes the output and the ground short circuit of described capacitor charging apparatus.
14, ignition mechanism as claimed in claim 11 is characterized in that described charging halt circuit makes between described capacitor charging apparatus and the described capacitor and is nonconducting state.
15, a kind of deterioration of silicon control decision maker adds first voltage of regulation between this silicon controlled first electrode and second electrode, it is characterized in that comprising:
Provide the device of signal to described silicon controlled grid, this signal is by making " leading to " signal of being on state between described controllable silicon first electrode and second electrode and " breaking " signal that is nonconducting state therebetween being formed;
Detect first detection device of described signal;
Detect second detection device of second voltage between the described silicon controlled grid and first electrode;
Described first detection device detects described " breaking " signal, and described second detection device detects described second voltage when surpassing defined threshold voltage, judges the device of described deterioration of silicon control.
16, a kind of deterioration of silicon control decision method is characterized in that comprising:
First voltage that between described controllable silicon anode and negative electrode, adds regulation;
Provide signal to described controllable silicon grid, this signal is by making " leading to " signal that is on state between described controllable silicon anode and the negative electrode and " breaking " signal that is nonconducting state therebetween being formed;
Detect described signal;
Detect second voltage between described controllable silicon grid and the negative electrode;
In described signal is " breaking " signal, and described second voltage is judged to be described deterioration of silicon control when surpassing defined threshold voltage.
17, a kind of ignition device for internal combustion stopping method, this ignition mechanism comprises:
Controllable silicon;
The capacitor that links to each other with described controllable silicon;
Device to described capacitor charging;
The ignition plug of the electric charge igniting that when described controllable silicon is on state, obtains by described capacitor charging;
By add the signal of regulation to described silicon controlled grid, control the device of described controllable silicon on state, this signal is by making described controllable silicon be " leading to " signal of on state and " breaking " signal that is nonconducting state therebetween being formed;
It is characterized in that,
Detect described signal;
Detect second voltage between described controllable silicon grid and the negative electrode;
When described signal is a break signal, and described second voltage promptly stops to described capacitor charging when surpassing defined threshold voltage.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5259168A JP2892917B2 (en) | 1993-09-22 | 1993-09-22 | Thyristor deterioration determination circuit and internal combustion engine ignition device using the same |
| JP259168/93 | 1993-09-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1109555A true CN1109555A (en) | 1995-10-04 |
| CN1042456C CN1042456C (en) | 1999-03-10 |
Family
ID=17330305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN94116278A Expired - Fee Related CN1042456C (en) | 1993-09-22 | 1994-09-22 | Device and method for judging deterioration of silicon control |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2892917B2 (en) |
| KR (1) | KR0135371B1 (en) |
| CN (1) | CN1042456C (en) |
| TW (1) | TW243486B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111289610A (en) * | 2020-01-19 | 2020-06-16 | Tcl华星光电技术有限公司 | Substrate crack detection method and system and storage medium |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013157148A1 (en) * | 2012-04-19 | 2013-10-24 | 日立オートモティブシステムズ阪神株式会社 | Ignition device for internal combustion engine |
| WO2013157149A1 (en) * | 2012-04-19 | 2013-10-24 | 日立オートモティブシステムズ阪神株式会社 | Ignition device for internal combustion engine |
| WO2014010096A1 (en) * | 2012-07-11 | 2014-01-16 | 日立オートモティブシステムズ阪神株式会社 | Ignition device for internal combustion engine |
| JP5605785B2 (en) * | 2012-07-11 | 2014-10-15 | 日立オートモティブシステムズ阪神株式会社 | Ignition device for internal combustion engine |
| CN112415355B (en) * | 2020-11-03 | 2022-04-01 | 西安交通大学 | Method and circuit for evaluating blocking state of thyristor of high-voltage converter valve |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3532831A1 (en) * | 1984-09-13 | 1986-04-17 | Honda Giken Kogyo K.K., Tokio/Tokyo | IGNITION DEVICE |
| DE3608740A1 (en) * | 1986-03-15 | 1987-10-08 | Prufrex Elektro App | CAPACITOR IGNITION SYSTEM |
| CN2042115U (en) * | 1987-10-09 | 1989-08-02 | 黄占斌 | High-efficiency ignitor |
| CN2031448U (en) * | 1988-01-09 | 1989-01-25 | 司立柱 | Capactitor energy-storage type electronic igniter |
-
1993
- 1993-09-22 JP JP5259168A patent/JP2892917B2/en not_active Expired - Lifetime
-
1994
- 1994-08-29 TW TW083107900A patent/TW243486B/en not_active IP Right Cessation
- 1994-09-16 KR KR1019940023548A patent/KR0135371B1/en not_active IP Right Cessation
- 1994-09-22 CN CN94116278A patent/CN1042456C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111289610A (en) * | 2020-01-19 | 2020-06-16 | Tcl华星光电技术有限公司 | Substrate crack detection method and system and storage medium |
Also Published As
| Publication number | Publication date |
|---|---|
| KR0135371B1 (en) | 1998-04-23 |
| JP2892917B2 (en) | 1999-05-17 |
| KR950008965A (en) | 1995-04-21 |
| JPH0792222A (en) | 1995-04-07 |
| CN1042456C (en) | 1999-03-10 |
| TW243486B (en) | 1995-03-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6856137B2 (en) | Ground fault detection system and method | |
| US20120200311A1 (en) | Photovoltaic device with electronic switch(es) | |
| CN101228447A (en) | Insulation resistance degradation detector and failure self-diagnostic method for insulation resistance degradation detector | |
| CN101868899A (en) | Overcurrent protection in a dimmer circuit | |
| CN111965515B (en) | Method for identifying fault of reverse-filling prevention diode | |
| JP3846336B2 (en) | Abnormality detection device for vehicle alternator | |
| CN100481688C (en) | Inverter device | |
| CN112611979A (en) | Grounding detection circuit and control system | |
| CN1042456C (en) | Device and method for judging deterioration of silicon control | |
| CN1878685B (en) | Electric vehicle controller | |
| ATE233866T1 (en) | DIAGNOSTIC SYSTEM FOR CAPACITOR IGNITION SYSTEMS | |
| EP0286282B1 (en) | Method for detecting input ac voltage | |
| CN111664044B (en) | Semiconductor integrated circuit having a plurality of transistors | |
| CN1068659C (en) | Ignition device of capacitor charging/discharging type | |
| EP0458762B1 (en) | An ignition device for internal combustion engines particularly for detecting spark failure | |
| CN219302904U (en) | Control circuit for relay | |
| JP4379309B2 (en) | Ignition system for internal combustion engine | |
| JP3447445B2 (en) | Capacitor charge / discharge igniter | |
| JP2569844B2 (en) | Capacitor discharge type ignition system for internal combustion engine | |
| SU1576970A1 (en) | Device for protection of converter | |
| JPH0517171U (en) | Capacitor charge / discharge type ignition device | |
| CN103856131A (en) | voltage regulator control circuit for automobile generator | |
| JPH0471368A (en) | Inverter | |
| JPS6257828B2 (en) | ||
| JPH0833197A (en) | Circuit for cutting off dc high-voltage power supply |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 19990310 Termination date: 20130922 |