CN110955067B - Active region structure of horizontal layered ridge optical waveguide device and manufacturing method - Google Patents

Active region structure of horizontal layered ridge optical waveguide device and manufacturing method Download PDF

Info

Publication number
CN110955067B
CN110955067B CN201911275436.0A CN201911275436A CN110955067B CN 110955067 B CN110955067 B CN 110955067B CN 201911275436 A CN201911275436 A CN 201911275436A CN 110955067 B CN110955067 B CN 110955067B
Authority
CN
China
Prior art keywords
doping
units
active region
doped
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201911275436.0A
Other languages
Chinese (zh)
Other versions
CN110955067A (en
Inventor
李淼峰
张宇光
王磊
肖希
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan Research Institute of Posts and Telecommunications Co Ltd
Wuhan Optical Valley Information Optoelectronic Innovation Center Co Ltd
Original Assignee
Wuhan Research Institute of Posts and Telecommunications Co Ltd
Wuhan Optical Valley Information Optoelectronic Innovation Center Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan Research Institute of Posts and Telecommunications Co Ltd, Wuhan Optical Valley Information Optoelectronic Innovation Center Co Ltd filed Critical Wuhan Research Institute of Posts and Telecommunications Co Ltd
Priority to CN201911275436.0A priority Critical patent/CN110955067B/en
Publication of CN110955067A publication Critical patent/CN110955067A/en
Application granted granted Critical
Publication of CN110955067B publication Critical patent/CN110955067B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
    • G02F1/0152—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index using free carrier effects, e.g. plasma effect
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The invention discloses an active region structure of a horizontal layered ridge optical waveguide device and a manufacturing method thereof, relating to the technical field of optical communication devices, wherein the active region structure comprises two doped regions which are distributed left and right, one doped region is injected with P-type impurities, the other doped region is injected with N-type impurities, and the junction of the two doped regions is the ridge waveguide central line of the active region structure; each doping area comprises at least two doping units which are horizontally distributed, the doping concentrations of different doping units in the same doping area are different, the doping units in the two doping areas are correspondingly arranged, and the higher the doping concentration of the doping units in the two correspondingly arranged doping units is, the smaller the thickness of the doping units is. The active area structure of the horizontal layered silicon-based electro-optical modulator provided by the invention has the advantages of lower optical loss, simple structure, lower cost and easiness in batch manufacturing.

Description

Active region structure of horizontal layered ridge optical waveguide device and manufacturing method
Technical Field
The invention relates to the technical field of optical communication devices, in particular to an active region structure of a horizontal layered ridge optical waveguide device and a manufacturing method thereof.
Background
In the design of silicon-based electro-optic modulators, it is the active region that, due to its plasma dispersion effect, this effect introduces losses while changing the active region waveguide index. Moreover, the refractive index change caused by the plasma dispersion effect is weak, and a high doping concentration is usually required to realize an effective phase modulation process, so that the loss of an active region of the silicon-based electro-optical modulator is large. Therefore, in order to keep the loss of the modulator as low as possible, it is necessary to ensure that the loss of the active region is kept as low as possible by some special design.
The commonly used method for reducing loss at present is to perform one-step compensation doping process on the upper left corner and the upper right corner of the ridge waveguide in the active region of the modulator, so that the doping of the two regions is neutralized, and further, the optical signal in the waveguide is not absorbed, thereby achieving the purpose of reducing loss.
Meanwhile, there are methods of reducing the loss of the active region by introducing one or several intrinsic regions, such as the active region of a PIN (PIN refers to P-type doped, intrinsic undoped and N-type doped regions, respectively) structure, into the active region.
However, the above solutions all put higher demands on the doping process, such as more doping steps or doping times, which results in complex structure, difficult manufacturing, and increased number of reticles, which in turn increases the manufacturing cost of the chip.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide an active area structure of a horizontally layered silicon-based electro-optical modulator, which not only has lower optical loss, but also has simple structure, lower cost and easy batch manufacturing.
In order to achieve the above purposes, the technical scheme adopted by the invention is as follows:
an active region structure of a horizontal layered ridge optical waveguide device comprises two doping regions distributed left and right, wherein one doping region is injected with P-type impurities, the other doping region is injected with N-type impurities, and the junction of the two doping regions is a ridge waveguide central line of the active region structure;
each doping area comprises at least two doping units which are horizontally distributed, the doping concentrations of different doping units in the same doping area are different, the doping units in the two doping areas are correspondingly arranged, and the thickness of the doping unit with the higher doping concentration in the two correspondingly arranged doping units is smaller.
On the basis of the technical scheme, the number of the doping units in each doping area is odd, the doping unit positioned in the middle of the active area structure is a central doping unit, other doping units are side doping units, and the number of the side doping units positioned on the upper side and the lower side of the central doping unit is the same.
On the basis of the technical scheme, the doping concentration of the side-edge doping unit close to the central doping unit is larger than that of the side-edge doping unit far away from the central doping unit.
On the basis of the technical scheme, in the same doping region, all the edge side doping units are symmetrically distributed along the central doping unit.
On the basis of the technical scheme, the thickness of the side doped unit close to the central doped unit is larger than that of the side doped unit far away from the central doped unit.
On the basis of the technical scheme, the thickness of the central doping unit is larger than that of any one side doping unit.
On the basis of the technical scheme, the two doping regions are distributed in bilateral symmetry, and the doping concentrations and the thicknesses of the two doping units which are correspondingly arranged in the two doping regions are the same.
On the basis of the technical scheme, each doping region comprises three doping units which are horizontally distributed, and the three doping units are a first layering layer, a second layering layer and a third layering layer from top to bottom in sequence.
On the basis of the technical scheme, the doping concentration of the first layering is 2 x 10 17 cm -3 The doping concentration of the second layer is 5 x 10 17 cm -3 The doping concentration of the third layer is 3 x 10 17 cm -3 The thickness of the active region structure is 220nm, the thickness of the first layered layer is 30nm, the thickness of the second layered layer is 160nm, and the thickness of the third layered layer is 30 nm.
The present invention also provides a method for manufacturing an active region structure of the above-described horizontally-layered ridge optical waveguide device, comprising the steps of:
dividing an active region structure into two doping regions distributed left and right, and dividing each doping region into at least two doping units distributed horizontally;
injecting P-type impurities with different doping concentrations into different doping units of one doping area respectively;
and respectively implanting N-type impurities with different doping concentrations into different doping units in the other doping area.
Compared with the prior art, the invention has the advantages that: the active region structure of the horizontal layered silicon-based electro-optical modulator has the advantages of low optical loss, simple structure, low cost and easy batch manufacturing.
Drawings
Fig. 1 is a schematic structural view of an active region structure of a horizontally-layered ridge optical waveguide device according to a first embodiment of the present invention;
FIG. 2 is a diagram illustrating the fundamental mode optical field distribution of a ridge waveguide according to a first embodiment of the present invention;
fig. 3 is a schematic structural view of the active region structure of a horizontally-layered ridge optical waveguide device in the second embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
It should be noted that, the ridge optical waveguide device in the embodiment of the present invention includes, but is not limited to, a silicon-based electro-optical modulator, and in practical applications, the ridge optical waveguide device may also be any other electro-optical modulator based on a carrier-induced refractive index effect or any ridge waveguide component, and has good flexibility and a wide application range.
Example one
Referring to fig. 1, an embodiment of the present invention provides an active region structure of a horizontally layered ridge optical waveguide device, including two doped regions distributed left and right, where one doped region is doped with P-type impurities, and the other doped region is doped with N-type impurities, and a boundary of the two doped regions is a ridge waveguide center line of the active region structure;
each doping area comprises at least two doping units which are horizontally distributed, the doping concentrations of different doping units in the same doping area are different, the doping units in the two doping areas are correspondingly arranged, and the higher the doping concentration of the doping units in the two correspondingly arranged doping units is, the smaller the thickness of the doping units is.
In the embodiment of the present invention, the doped units in the two doped regions are correspondingly arranged, which means that the doped units in the two doped regions have the same number and substantially the same position and are arranged in a one-to-one correspondence manner. In the embodiment of the invention, the two doped regions can be distributed symmetrically or asymmetrically, and the modulation efficiency of the whole modulator can be maximized only by adjusting the concentration and the thickness of the doped unit.
For example, the two doping regions are a P-type doping region and an N-type doping region from left to right in sequence, the two dopings each include three doping units distributed horizontally, the three doping units in the P-type doping region are P-type doping 1, P-type doping 2 and P-type doping 3 from top to bottom in sequence, the three doping units in the N-type doping region are N-type doping 1, N-type doping 2 and N-type doping 3 from top to bottom in sequence, the P-type doping 1 and the N-type doping 1 are correspondingly arranged, the P-type doping 2 and the N-type doping 2 are correspondingly arranged, and the P-type doping 3 and the N-type doping 3 are correspondingly arranged. If the doping concentration of the P-type doping 3 is higher than that of the N-type doping 3, the thickness of the P-type doping 3 is correspondingly smaller than that of the N-type doping 3, and the specific difference is determined by combining the sizes of the two doping regions, so that the modulation efficiency of the whole modulator is maximized. According to the active region structure of the horizontally-layered ridge optical waveguide device, due to the fact that horizontal layering is conducted, the doping concentrations of the doping units in different layers are different, the doping units in the two doping regions are correspondingly arranged, the higher the doping concentration of the two correspondingly-arranged doping units is, the smaller the thickness of the doping unit is, the corresponding doping units on the left side and the right side can be neutralized, optical signals in the waveguide cannot be absorbed, optical loss is low, each layer is clearly divided, the doping concentration is determined, the structure is simple, during manufacturing, only the set doping concentration needs to be injected in a sub-region mode, batch manufacturing is easy, and cost is low.
Furthermore, in the embodiment of the present invention, the number of the doping units in each doping region is odd, the doping unit located in the middle of the active region structure is a central doping unit, the other doping units are side doping units, and the number of the side doping units located on the upper side and the lower side of the central doping unit is the same.
Furthermore, in the embodiments of the present invention, the doping concentration of the side-doped unit close to the central doped unit is greater than the doping concentration of the side-doped unit far from the central doped unit. The closer to the central doped unit, the stronger the light intensity, i.e. the higher the doping concentration at the place where the light intensity is strongest, the better the effect of compensating for loss.
Furthermore, in the embodiment of the present invention, in the same doped region, all the edge-doped cells are symmetrically distributed along the central doped cell.
Specifically, in the embodiment of the present invention, the thickness of the side-doped unit close to the central doped unit is greater than the thickness of the side-doped unit far from the central doped unit. The thickness of the central doping unit is larger than that of any one side doping unit.
Preferably, in the embodiment of the present invention, the two doping regions are symmetrically distributed left and right, and the doping concentrations and thicknesses of the two doping units correspondingly disposed in the two doping regions are the same. The symmetrical distribution structure has the advantages of simple structure, more convenient application, and higher efficiency in the process of adjusting parameters to ensure that the modulation efficiency of the modulator is higher.
In the embodiment of the present invention, taking three layers as an example, each doping region includes three doping units distributed horizontally, and the three doping units are, from top to bottom, a first layer, a second layer, and a third layer in sequence.
Further, in an embodiment of the present invention, the doping concentration of the first segment is 2 x 10 17 cm -3 The doping concentration of the second layer is 5 x 10 17 cm -3 The doping concentration of the third layer is 3 x 10 17 cm -3 The thickness of the active region structure is 220nm, the thickness of the first layered layer is 30nm, the thickness of the second layered layer is 160nm, and the thickness of the third layered layer is 30 nm.
In the embodiment of the invention, the left doped region is a P-type doped region, the right doped region is an N-type doped region, three doped units of the P-type doped region are P-type doped 1, P-type doped 2 and P-type doped 3 from top to bottom in sequence, and three doped units of the N-type doped region are N-type doped 1, N-type doped 2 and N-type doped 3 from top to bottom in sequence. Correspondingly, the P-type doping 1 and the N-type doping 1 are first layers, the P-type doping 2 and the N-type doping 2 are second layers, and the P-type doping 3 and the N-type doping 3 are third layers.
More specifically, the doping concentrations of the P-type doping 1 and the N-type doping 1 are both 2 x 10 17 cm -3 The doping concentrations of the P-type doping 2 and the N-type doping 2 are both 5 x 10 17 cm -3 The doping concentrations of the P-type doping 3 and the N-type doping 3 are 3 x 10 17 cm -3 。
More specifically, the thickness of the P-type doping 1 and the N-type doping 1 is 30nm, the thickness of the P-type doping 2 and the N-type doping 2 is 160nm, and the thickness of the P-type doping 3 and the N-type doping 3 is 30 nm.
In an embodiment of the invention, the width of the doped cells is set according to the fundamental mode optical field distribution of the ridge waveguide.
Referring to the basic mode optical field distribution of the ridge waveguide as shown in fig. 2, the outline of the basic mode optical field distribution of the ridge waveguide is formed by intersecting two ellipses in length and breadth, wherein the vertically distributed ellipse is ellipse 1, the horizontally distributed ellipse is ellipse 2, the central line of the ridge waveguide is the major axis of ellipse 1, and two focuses of ellipse 1 are respectively F1 and F2. When the layers are layered into three layers, i.e., each doped region includes three doped cells, a horizontal line passing through the focal point F1 may be taken as an interface line of the first layer and the second layer, and a horizontal line passing through the focal point F2 may be taken as an interface line of the second layer and the third layer.
In the embodiment of the present invention, the width of the doping unit may also be set according to the thickness of the active region structure.
For example, when the thickness of the active region structure is a, if the layers are layered into three layers, that is, each doped region includes three doped cells, the thicknesses of the first layer and the third layer may be both a/4, and the thickness of the second layer may be a/2.
Example two
Referring to fig. 3, the difference between the second embodiment and the first embodiment is: each doping area comprises two doping units which are horizontally distributed, and a first layering and a second layering are sequentially arranged from top to bottom.
The doping concentration of the first layer is 2 x 10 17 cm -3 The doping concentration of the second layer is 5 x 10 17 cm -3 . The thickness of the active region structure is 220nm, the thickness of the first layered layer is 60nm, and the thickness of the second layered layer is 160 nm.
In the embodiment of the invention, the doped region on the left side is a P-type doped region, the doped region on the right side is an N-type doped region, two doped units of the P-type doped region are sequentially P-type doped 1 and P-type doped 2 from top to bottom, and two doped units of the N-type doped region are sequentially N-type doped 1 and N-type doped 2 from top to bottom. Correspondingly, the P-type doping 1 and the N-type doping 1 are first layers, and the P-type doping 2 and the N-type doping 2 are second layers.
The doping concentrations of the P-type doping 1 and the N-type doping 1 are both 2 x 10 17 cm -3 The doping concentrations of the P-type doping 2 and the N-type doping 2 are both 5 x 10 17 cm -3 。
The thickness of the P-type doping 1 and the N-type doping 1 is 60nm, and the thickness of the P-type doping 2 and the N-type doping 2 is 160 nm.
In the embodiment of the present invention, the performance is better when the number of doping units horizontally distributed in the same doping region is larger, that is, the number of layers is larger, but the complexity of the process is also increased, and therefore, in practical use, the doping units are preferably divided into the two-layer or three-layer structure as described above, which does not increase the number of process steps and increase the processing difficulty. And simultaneously, the wider the layering closer to the center of the ridge waveguide, the higher the doping concentration, the narrower the layering farther from the center of the ridge waveguide, and the lower the doping concentration, the better the effect is.
EXAMPLE III
An embodiment of the present invention provides a method for manufacturing an active region structure of the above-described horizontally-layered ridge optical waveguide device, including the steps of:
dividing an active region structure into two doping regions distributed left and right, and dividing each doping region into at least two doping units distributed horizontally;
injecting P-type impurities with different doping concentrations into different doping units of one doping area respectively;
and respectively implanting N-type impurities with different doping concentrations into different doping units in the other doping area.
Preferably, in the embodiment of the present invention, the active region structure is divided into two doping regions symmetrically distributed left and right, all the doping units of the two doping regions are correspondingly disposed, and the doping concentrations and thicknesses of the two doping units correspondingly disposed in the two doping regions are the same. The symmetrical distribution structure has the advantages of simple structure, more convenient application, and higher efficiency in the process of adjusting parameters to ensure that the modulation efficiency of the modulator is higher.
More preferably, in the embodiment of the present invention, taking three layers of layers as an example, each doping region is divided into three doping units distributed horizontally, the doping region on the left side is a P-type doping region, the doping region on the right side is an N-type doping region, the three doping units in the P-type doping region are sequentially P-type doping 1, P-type doping 2 and P-type doping 3 from top to bottom, and the three doping units in the N-type doping region are sequentially N-type doping 1, N-type doping 2 and N-type doping 3 from top to bottom.
The doping concentrations of the P-type doping 1 and the N-type doping 1 are both 2 x 10 17 cm -3 The doping concentrations of the P-type doping 2 and the N-type doping 2 are both 5 x 10 17 cm -3 The doping concentrations of the P-type doping 3 and the N-type doping 3 are 3 x 10 17 cm -3 。
The thickness of the active region structure is 220nm, the thickness of the P type doping 1 and the N type doping 1 is 30nm, the thickness of the P type doping 2 and the N type doping 2 is 160nm, and the thickness of the P type doping 3 and the N type doping 3 is 30 nm.
According to the manufacturing method of the active region structure of the horizontally-layered ridge optical waveguide device, due to the fact that horizontal layering is conducted, and the doping concentrations of the doping units in different layers are different, the corresponding doping units on the left side and the right side can be neutralized, light signals in the waveguide cannot be absorbed, optical loss is low, each layer is divided clearly, the doping concentration is determined, the structure is simple, only the set doping concentration needs to be injected in different areas during manufacturing, batch manufacturing is easy, and cost is low.
The present invention is not limited to the above-described embodiments, and it will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the principle of the present invention, and such modifications and improvements are also considered to be within the scope of the present invention. Those not described in detail in this specification are within the skill of the art.

Claims (10)

1. An active region structure of a horizontal layered ridge optical waveguide device is characterized by comprising two doping regions which are distributed left and right, wherein one doping region is injected with P-type impurities, the other doping region is injected with N-type impurities, and the junction of the two doping regions is the ridge waveguide central line of the active region structure;
each doping area comprises at least two doping units which are horizontally distributed, the doping concentrations of different doping units in the same doping area are different, the doping units in the two doping areas are correspondingly arranged, and the thickness of the doping unit with the higher doping concentration in the two correspondingly arranged doping units is smaller.
2. The active region structure of a horizontally layered ridge optical waveguide device as claimed in claim 1, wherein: the number of the doping units in each doping area is odd, the doping unit positioned in the middle of the active area structure is a central doping unit, the other doping units are side doping units, and the number of the side doping units positioned on the upper side and the lower side of the central doping unit is the same.
3. The active region structure of a horizontally layered ridge optical waveguide device as claimed in claim 2, wherein: the doping concentration of the side doped unit close to the central doped unit is greater than that of the side doped unit far away from the central doped unit.
4. The active region structure of a horizontally layered ridge optical waveguide device as claimed in claim 2, wherein: in the same doped region, all the side doped units are symmetrically distributed along the central doped unit.
5. The active region structure of a horizontally layered ridge optical waveguide device as claimed in claim 4, wherein: the thickness of the side doped unit close to the central doped unit is larger than that of the side doped unit far away from the central doped unit.
6. The active region structure of a horizontally layered ridge optical waveguide device as claimed in claim 4, wherein: the thickness of the central doping unit is larger than that of any one side doping unit.
7. The active region structure of a horizontally layered ridge optical waveguide device as claimed in claim 1, wherein: the two doping regions are distributed in bilateral symmetry, and the doping concentration and the thickness of the two doping units which are correspondingly arranged in the two doping regions are the same.
8. The active region structure of a horizontally layered ridge optical waveguide device as claimed in claim 7, wherein: each doping area comprises three doping units which are horizontally distributed, and the three doping units are a first layering, a second layering and a third layering from top to bottom in sequence.
9. The active region structure of a horizontally layered ridge optical waveguide device as claimed in claim 8, wherein: the doping concentration of the first segment is 2 x 10 17 cm -3 The doping concentration of the second layer is 5 x 10 17 cm -3 The doping concentration of the third layer is 3 x 10 17 cm -3 The thickness of the active region structure is 220nm, the thickness of the first layered layer is 30nm, the thickness of the second layered layer is 160nm, and the thickness of the third layered layer is 30 nm.
10. A method of fabricating an active region structure of a horizontally layered ridge optical waveguide device as claimed in any one of claims 1 to 9, comprising the steps of:
dividing an active region structure into two doping regions which are distributed left and right, and dividing each doping region into at least two doping units which are distributed horizontally;
respectively injecting P-type impurities with different doping concentrations into different doping units of one doping area;
and respectively injecting N-type impurities with different doping concentrations into different doping units in the other doping area.
CN201911275436.0A 2019-12-12 2019-12-12 Active region structure of horizontal layered ridge optical waveguide device and manufacturing method Active CN110955067B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911275436.0A CN110955067B (en) 2019-12-12 2019-12-12 Active region structure of horizontal layered ridge optical waveguide device and manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911275436.0A CN110955067B (en) 2019-12-12 2019-12-12 Active region structure of horizontal layered ridge optical waveguide device and manufacturing method

Publications (2)

Publication Number Publication Date
CN110955067A CN110955067A (en) 2020-04-03
CN110955067B true CN110955067B (en) 2022-09-02

Family

ID=69981229

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911275436.0A Active CN110955067B (en) 2019-12-12 2019-12-12 Active region structure of horizontal layered ridge optical waveguide device and manufacturing method

Country Status (1)

Country Link
CN (1) CN110955067B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114114722B (en) * 2021-11-29 2023-07-04 烽火通信科技股份有限公司 High-speed silicon light modulator phase shift arm and preparation method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017207588A (en) * 2016-05-17 2017-11-24 日本電信電話株式会社 Semiconductor optical modulation element

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7085443B1 (en) * 2003-08-15 2006-08-01 Luxtera, Inc. Doping profiles in PN diode optical modulators
US7672553B2 (en) * 2007-03-01 2010-03-02 Alcatel-Lucent Usa Inc. High speed semiconductor optical modulator
SG2013082102A (en) * 2012-11-05 2014-06-27 Agency Science Tech & Res Method for forming an optical modulator
US9939666B2 (en) * 2013-06-06 2018-04-10 Acacia Communications, Inc. Silicon electro-optical modulator
US9523870B2 (en) * 2015-04-07 2016-12-20 Futurewei Technologies, Inc. Vertical PN silicon modulator
US10514503B2 (en) * 2016-03-04 2019-12-24 The Governing Council Of The University Of Toronto System and method for manufacturing a semiconductor junction
EP3762774A4 (en) * 2018-03-09 2021-12-08 Université Laval Optical phase modulator and optical modulator

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017207588A (en) * 2016-05-17 2017-11-24 日本電信電話株式会社 Semiconductor optical modulation element

Also Published As

Publication number Publication date
CN110955067A (en) 2020-04-03

Similar Documents

Publication Publication Date Title
US9122112B2 (en) Liquid crystal lens, controlling method thereof and 3D display using the same
US9142698B1 (en) Integrated electro-absorption modulator
CN103226252B (en) A kind of doped structure that improves depletion type silicon-based electro-optical modulator modulation efficiency
KR101961237B1 (en) Germanium-silicon electroabsorption modulator
JP5251981B2 (en) Optical control element and optical waveguide circuit
WO2016150263A1 (en) P-n junction
CN110955067B (en) Active region structure of horizontal layered ridge optical waveguide device and manufacturing method
CN105629519A (en) Silicon-based light modulator
US11054578B2 (en) Cross optical waveguide structure and optical waveguide device
CN110989213B (en) Subminiature photonic crystal modulator and manufacturing method thereof
DE102021132669A1 (en) Method for improving modulation efficiency in a silicon optical modulator
CN110989212B (en) Active region structure of vertically layered ridge optical waveguide device and manufacturing method
CN105378548B (en) A kind of doped structure and preparation method thereof, electrooptic modulator
US10216060B2 (en) Liquid crystal lens and manufacturing method thereof, display device
CN105629522A (en) Silicon-based light modulator
CN105700164B (en) A kind of 3D display module and 3D display device
CN108490650A (en) Cycle staggering waveguiding structure and Electro-optical Modulation structure and MZI structures
CN108572473A (en) A kind of double dielectric layer blue phase liquid crystal lens arrays
US11686991B1 (en) Silicon optical modulator, method for making the same
CN112666728A (en) Electro-optical modulator
CN114185116B (en) Topological optical communication device capable of realizing topological boundary state and/or zero-dimensional angle state
CN111458907B (en) Optical Bipolar Phase Shifter
CN1333433C (en) Electrode wire structure for inhibiting coupled crosstalk between adjacent channels and method for manufacturing same
CN101907785B (en) A kind of method for making of photomodulator PN junction
KR20140042007A (en) Optical switch using reflection or refraction

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant