CN110948377A - Chemical mechanical polishing mixture and polishing method - Google Patents
Chemical mechanical polishing mixture and polishing method Download PDFInfo
- Publication number
- CN110948377A CN110948377A CN201811118496.7A CN201811118496A CN110948377A CN 110948377 A CN110948377 A CN 110948377A CN 201811118496 A CN201811118496 A CN 201811118496A CN 110948377 A CN110948377 A CN 110948377A
- Authority
- CN
- China
- Prior art keywords
- chemical mechanical
- mechanical polishing
- polishing
- liquid
- liquid supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 112
- 239000000126 substance Substances 0.000 title claims abstract description 73
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000203 mixture Substances 0.000 title claims description 8
- 239000007788 liquid Substances 0.000 claims abstract description 100
- 239000002738 chelating agent Substances 0.000 claims abstract description 43
- 239000002245 particle Substances 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 238000007517 polishing process Methods 0.000 claims abstract description 11
- 239000002002 slurry Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000011259 mixed solution Substances 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 claims description 4
- RGHNJXZEOKUKBD-SQOUGZDYSA-N Gluconic acid Natural products OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims description 4
- 239000000174 gluconic acid Substances 0.000 claims description 4
- 235000012208 gluconic acid Nutrition 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000012530 fluid Substances 0.000 abstract description 7
- 230000002776 aggregation Effects 0.000 abstract description 3
- 238000004220 aggregation Methods 0.000 abstract description 2
- 238000005520 cutting process Methods 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 229910021645 metal ion Inorganic materials 0.000 description 18
- 230000009471 action Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 239000012972 dimethylethanolamine Substances 0.000 description 1
- -1 etc.) Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011146 organic particle Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Provided is a chemical mechanical polishing method, comprising: mounting a semiconductor wafer on the grinding head, wherein a film layer is formed on the surface of the semiconductor wafer; mixing chemical mechanical polishing liquid provided by a first liquid supply device and a chelating agent provided by a second liquid supply device to form a mixed liquid, wherein the chemical mechanical polishing liquid has a pH value of more than 7 and maintains the mixed liquid at an alkaline state in a chemical polishing process; and guiding the mixed liquid to a grinding pad on the platform, and driving the semiconductor wafer to grind on the grinding pad by the grinding head. The grinding fluid method of the invention mixes the alkaline grinding fluid and the chelating agent immediately after the chelating agent is contained, under the alkaline condition, the chelating agent is chelated with the metal in the grinding fluid, thereby cutting off the connection between the grinding particles, reducing the aggregation of the grinding particles, and reducing the damage to the wafer, and the number of 0.12 micron scratches in the unit area of the surface of the wafer can be less than 4000 by adopting the grinding method of the invention.
Description
Technical Field
The invention belongs to the technical field of chemical mechanical polishing, and particularly relates to a chemical mechanical polishing mixed liquid and a chemical mechanical polishing method.
Background
In wafer fabrication, as the process technology is upgraded and the sizes of the conductive lines and the gates are reduced, the requirement of Lithography (lithograph) technology on the flatness (Non-uniformity) of the wafer surface is higher and higher, and the role of Chemical Mechanical Polishing (CMP) is more and more important. CMP is a process of grinding a wafer surface that is not flat into a flat surface by chemical and mechanical actions, and can achieve global planarization.
In chemical mechanical polishing, the properties of the polishing slurry directly affect the quality of the polished surface. The slurry is typically prepared by grinding particles of ultrafine solids (e.g., SiO in the nanometer range)2、Al2O3Particles, etc.), surfactants, stabilizers, oxidizing agents, etc., the abrasive particles providing the abrasive action. How to reduce the scratch rate of the wafer surface after the chemical mechanical polishing of the wafer is always a technical problem to be solved by those skilled in the art.
Disclosure of Invention
In order to solve the above problems, the present invention provides a chemical mechanical polishing liquid and a polishing method capable of reducing scratches on a wafer surface.
One aspect of the present invention provides a chemical mechanical polishing method, including: providing a chemical mechanical polishing device, wherein the chemical mechanical polishing device comprises a platform for mounting a polishing pad, a polishing head which is used for fixing a wafer for polishing and is movable on the platform, a first liquid supply device used for supplying chemical mechanical polishing liquid, a second liquid supply device used for supplying a chelating agent and a third liquid supply device used for mixing liquid, the third liquid supply device is provided with a mixing tank, a liquid supply port of the first liquid supply device and a liquid supply port of the second liquid supply device are connected to the mixing tank, and a liquid supply port of the third liquid supply device is aligned on the platform; mounting a semiconductor wafer on the grinding head, wherein a film layer is formed on the surface of the semiconductor wafer; performing a pre-mixing step in a chemical mechanical polishing process, mixing a chemical mechanical polishing slurry provided by the first liquid supply and a chelating agent provided by the second liquid supply to form a mixed liquid in the mixing tank, wherein the chemical mechanical polishing slurry comprises abrasive particles and water, and has a pH value greater than 7 so that the mixed liquid is maintained at an alkaline state in the chemical polishing process; and a step of carrying out chemical mechanical polishing to planarize the film, wherein the mixed liquid provided by the third liquid supply device is guided to a polishing pad on the platform, and the polishing head drives the semiconductor wafer to polish on the polishing pad.
According to an embodiment of the present invention, the mixing tank is located on the platform and integrally connected to the liquid supply port of the third liquid supply to form a liquid mixing coater.
According to another embodiment of the present invention, the chelating agent is 0.09-0.12% by weight of the mixed solution.
According to another embodiment of the present invention, the film comprises a silicon oxide film, the semiconductor wafer has a trench, and the film fills the trench.
According to another embodiment of the present invention, after the step of performing the chemical mechanical polishing to planarize the film layer, the film layer has a number of polishing scratches greater than 0.12 μm in width not higher than 4000.
According to another embodiment of the present invention, the pH of the mixed solution is 9 to 12.
According to another embodiment of the present invention, the mixed solution is injected at a flow rate of 200-300ml/min, and the polishing pressure provided by the polishing head is 2-3 psi.
According to another embodiment of the present invention, the semiconductor wafer is a 12-inch wafer.
The invention also provides a chemical mechanical polishing mixed solution, which comprises a chemical mechanical polishing liquid and a chelating agent, wherein the chelating agent accounts for 0.09-0.12% of the total weight of the mixed solution, the chelating agent comprises gluconic acid, the chemical mechanical polishing liquid comprises polishing particles and water, and the chemical mechanical polishing liquid has a pH value greater than 7 and enables the mixed solution to be maintained at an alkaline state in a chemical polishing process.
According to an embodiment of the invention, the abrasive particles comprise silica particles, the abrasive particles having an average particle size of not more than 0.15 micrometer.
The grinding method of the invention mixes the alkaline grinding fluid and the chelating agent immediately, under the alkaline condition, the chelating agent is chelated with the metal in the grinding fluid, thereby cutting off the connection between the grinding particles, reducing the aggregation of the grinding particles, and reducing the damage to the wafer, and the number of 0.12 micron scratches in the unit area of the surface of the wafer can be less than 4000 by adopting the grinding method of the invention.
Drawings
The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings.
FIG. 1 is a schematic view of a polishing method according to an embodiment of the present invention.
Fig. 2 is a schematic view of a grinding principle of the grinding method according to the embodiment of the present invention.
Fig. 3 is a schematic view of a grinding principle of a conventional grinding method.
Wherein the reference numerals are as follows:
1: first liquid supply device
2: second liquid supply device
3: third liquid supply device
41: platform
42: polishing pad
5: grinding head
6: wafer
7: abrasive particles
8: metal ion
9: chelating agents
10: scratch mark
Detailed Description
The present invention will be described in detail with reference to the following embodiments.
As shown in fig. 1 and fig. 2, a chemical mechanical polishing method according to an embodiment of the present invention includes: providing a chemical mechanical polishing device, wherein the chemical mechanical polishing device comprises a platform 41 for mounting a polishing pad 42, a polishing head 5 which is used for fixing a wafer for polishing and is movable on the platform 41, a first liquid supply 1 for supplying chemical mechanical polishing liquid, a second liquid supply 2 for supplying a chelating agent and a third liquid supply 3 for mixing liquid, the third liquid supply 3 is provided with a mixing tank, a liquid supply port of the first liquid supply 1 and a liquid supply port of the second liquid supply 2 are connected to the mixing tank, and a liquid supply port of the third liquid supply 3 is aligned on the platform 41; mounting a semiconductor wafer 6 on a polishing head 5, wherein a film layer is formed on the surface of the semiconductor wafer 6; performing a step of pre-mixing in a chemical mechanical polishing process, mixing a chemical mechanical polishing slurry provided by a first liquid supply 1 and a chelating agent provided by a second liquid supply 2 to form a mixed liquid in a mixing tank, the chemical polishing slurry including abrasive particles and water, the chemical mechanical polishing slurry having a pH of more than 7 and maintaining the mixed liquid alkaline in the chemical polishing process; and a step of performing chemical mechanical polishing to planarize the film layer, wherein the mixed liquid supplied from the third liquid supplier 3 is guided to the polishing pad 42 on the platen, and the semiconductor wafer 6 is carried by the polishing head 5 to be polished on the polishing pad 42.
In the chemical mechanical polishing apparatus, the mixing tank of the third liquid supply device 3 is located on the platform 41 and integrally connected with the liquid supply port of the third liquid supply device 3 to form a liquid mixing coater. The chemical mechanical polishing slurry in the first liquid supplier 1 can be any alkaline polishing slurry, and can be, but is not limited to, commercially available alkaline polishing slurries, such as Cabot D3586 and Versum STI 2401. Comprises grinding particles, water and an additive, wherein the pH value of the grinding fluid is more than 7.
In the chemical mechanical polishing slurry, the abrasive particles can be any suitable abrasive particles, such as silica, alumina, gamma alumina, ceria, or polymeric particles, spinel, zinc oxide, hybrid organic/inorganic particles, or mixtures thereof. The abrasive particles preferably comprise silica particles. The average particle diameter of the abrasive particle particles is preferably not more than 150 nm. The concentration of the abrasive particles is about 2 to 20%, preferably 5 to 15% by weight of the total weight of the abrasive liquid.
The polishing slurry inevitably contains metal ion impurities such as Al3+、Ca2+、Co2+、Fe3+、Fe2+、Cu2+、Cu+、Cr2+、Cr3+、Cr6+、K+、Mg2+、Mn2+、Na+、Ti2+、Ti3+、Ti2+、Zn2+、Zr2+、Zr3+、Zr4+And the like.
The chelating agent in the second liquid supply unit 2 and the chemical mechanical polishing liquid in the first liquid supply unit 1 are mixed in the mixing tank of the third liquid supply unit 3. The chelating agent in the mixed solution has the function of including the metal ions into the chelating agent through the strong binding effect of the chelating agent molecules and the metal ions, so that the metal ions are changed into stable compounds with larger molecular weight, and the metal ions are prevented from adsorbing the grinding particles with negative charges to form large particles to scratch the wafer. Thus, the chelating agent is any chelating agent that undergoes a chelating reaction with the metal ions in the polishing slurry. The chelating agent may be an inorganic metal ion chelating agent, an organic metal ion chelating agent, a chelating agent such as a carboxylic acid type, an organic polyphosphonic acid, or a polycarboxylic acid. The chelating agent has a strong chelating action with metal ions under an alkaline condition and a weak chelating action with metal ions under an acidic condition, and therefore, the chemical mechanical polishing liquid of the present invention is preferably alkaline. The pH of the chemical mechanical polishing liquid of the present invention is preferably 9 to 12. The content of the chelating agent is 0.09-0.12% of the total weight of the grinding fluid. At a content of less than 0.09%, the chelating agent has a limited effect and cannot effectively reduce scratches. At levels above 0.12%, the chelating agent is unnecessarily wasted. Since most chelating agents have a certain selectivity for metal ions, when an all-purpose chelating agent is selected, most of the metal ions in the polishing slurry will be chelated, and the chelating agent will exert the greatest effect. Gluconic acid is such a totipotent chelating agent. Therefore, the chelating agent for the chemical mechanical polishing liquid of the present invention is preferably gluconic acid.
In order to keep the polishing process in the mixed liquid alkaline, the chemical mechanical polishing liquid may further include a pH regulator to keep the polishing liquid alkaline all the time. The pH regulator may be dimethylethanolamine, diethanolamine, triethanolamine, etc.
The chemical mechanical polishing slurry may further include other additives such as surfactants and the like commonly used in the art.
The surface of the semiconductor wafer 6 may have a film layer, which may include a silicon oxide film layer. The semiconductor wafer 6 may have trenches that are filled with a film. The semiconductor wafer may be a 12 inch wafer.
The mixture can be injected at a flow rate of 200-300ml/min, and the polishing pressure provided by the polishing head can be 2-3 psi.
With the polishing method of the present invention, the chelating agent chelates with the metal ions to prevent the abrasive grains from agglomerating, and the average particle diameter of the abrasive grains is not more than 0.15 μm, so that the number of polishing scratches having a width of more than 0.12 μm on the surface of the 12-inch wafer 6 after the step of performing chemical mechanical polishing to planarize the film layer is not more than 4000.
In another embodiment of the present invention, the chemical mechanical polishing slurry in the first liquid supply 1 may be mixed with a chelating agent to form a chemical mechanical polishing mixture.
Fig. 2 is a schematic view illustrating a grinding principle of the grinding method according to the embodiment of the present invention. As shown in fig. 2, the metal ions 8 chelate with the chelating agent 9 in the polishing slurry to form larger compounds, thereby shearing off the connection with the negatively charged polishing particles 7, reducing the agglomeration of the polishing particles and reducing the scratch on the wafer 6.
Fig. 3 is a schematic view showing a grinding principle of a conventional grinding method. As shown in fig. 3, the conventional polishing liquid contains a small amount of metal ions 8, and the metal ions 8 are positively charged and the surfaces of the polishing particles 7 are negatively charged. The abrasive particles 7 agglomerate around the metal ions 8 by electrostatic attraction to form large particles, which easily scratch the wafer 6 during the polishing process, resulting in large scratches 10.
The chemical mechanical polishing method can greatly reduce the scratches on the wafer 6, and compared with the existing polishing liquid, the number of the scratches in a 12-inch wafer can be reduced from 5000 to 3500 and 4000, so that the defect of the wafer can be reduced by 20-30%, and the yield of the wafer is improved.
The present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof, and it should be understood that various changes and modifications can be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. A chemical mechanical polishing method, comprising:
providing a chemical mechanical polishing device, wherein the chemical mechanical polishing device comprises a platform for mounting a polishing pad, a polishing head which is used for fixing a wafer for polishing and is movable on the platform, a first liquid supply device used for supplying chemical mechanical polishing liquid, a second liquid supply device used for supplying a chelating agent and a third liquid supply device used for mixing liquid, the third liquid supply device is provided with a mixing tank, a liquid supply port of the first liquid supply device and a liquid supply port of the second liquid supply device are connected to the mixing tank, and a liquid supply port of the third liquid supply device is aligned on the platform;
mounting a semiconductor wafer on the grinding head, wherein a film layer is formed on the surface of the semiconductor wafer;
performing a pre-mixing step in a chemical mechanical polishing process, mixing a chemical mechanical polishing slurry provided by the first liquid supply and a chelating agent provided by the second liquid supply to form a mixed liquid in the mixing tank, wherein the chemical mechanical polishing slurry comprises abrasive particles and water, and has a pH value greater than 7 so that the mixed liquid is maintained at an alkaline state in the chemical polishing process; and
and a step of carrying out chemical mechanical polishing to planarize the film, wherein the mixed liquid provided by the third liquid supply device is guided to a polishing pad on the platform, and the polishing head drives the semiconductor wafer to polish on the polishing pad.
2. The chemical mechanical polishing method of claim 1, wherein the mixing tank is located on the platform and integrally connected to the liquid supply port of the third liquid supply to form a liquid mixing coater.
3. The grinding method according to claim 1, wherein the chelating agent is present in an amount of 0.09 to 0.12% by weight based on the total weight of the mixed solution.
4. The chemical mechanical polishing method of claim 1, wherein the film comprises a silicon oxide film, the semiconductor wafer has a trench, and the film fills the trench.
5. The method of claim 1, wherein after the step of performing chemical mechanical polishing to planarize the film, the film has a number of polishing scratches greater than 0.12 μm wide not higher than 4000.
6. The chemical mechanical polishing method of claim 1, wherein the pH of the mixture is 9 to 12.
7. The chemical mechanical polishing method as claimed in claim 1, wherein the mixture is injected at a flow rate of 200 ml/min and the polishing pressure provided by the polishing head is 2-3 psi.
8. The chemical mechanical polishing method of any one of claims 1 to 7, wherein the semiconductor wafer is a 12-inch wafer.
9. The mixed liquid for chemical mechanical polishing is characterized by comprising a chemical mechanical polishing liquid and a chelating agent, wherein the chelating agent accounts for 0.09-0.12% of the total weight of the mixed liquid, the chelating agent comprises gluconic acid, the chemical mechanical polishing liquid comprises polishing particles and water, and the chemical mechanical polishing liquid has a pH value greater than 7 and enables the mixed liquid to be maintained at an alkaline state in a chemical polishing process.
10. The chemical mechanical polishing mixture as set forth in claim 9 wherein the abrasive particles comprise silica particles, the abrasive particles having an average particle size of not greater than 0.15 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811118496.7A CN110948377B (en) | 2018-09-25 | 2018-09-25 | Chemical mechanical polishing mixed liquid and polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811118496.7A CN110948377B (en) | 2018-09-25 | 2018-09-25 | Chemical mechanical polishing mixed liquid and polishing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110948377A true CN110948377A (en) | 2020-04-03 |
| CN110948377B CN110948377B (en) | 2024-06-21 |
Family
ID=69962358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811118496.7A Active CN110948377B (en) | 2018-09-25 | 2018-09-25 | Chemical mechanical polishing mixed liquid and polishing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110948377B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115261152A (en) * | 2022-08-05 | 2022-11-01 | 长鑫存储技术有限公司 | Cleaning agent and application thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000233361A (en) * | 1998-12-14 | 2000-08-29 | Matsushita Electronics Industry Corp | Polishing liquid for chemicomechanical polishing and polishing method therefor |
| CN1858133A (en) * | 2006-05-31 | 2006-11-08 | 河北工业大学 | Polishing liquid for chemical and mechanical polsihing of computer hard disc base sheet |
| CN101297015A (en) * | 2005-10-24 | 2008-10-29 | 3M创新有限公司 | Polishing fluids and methods for CMP |
| TW201202402A (en) * | 2010-06-03 | 2012-01-16 | Asahi Glass Co Ltd | Polishing agent and polishing method |
| CN102623327A (en) * | 2011-01-31 | 2012-08-01 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical lapping method |
| US9401104B2 (en) * | 2014-05-05 | 2016-07-26 | Cabot Microelectronics Corporation | Polishing composition for edge roll-off improvement |
| CN106816374A (en) * | 2015-11-30 | 2017-06-09 | 台湾积体电路制造股份有限公司 | The method for performing CMP step |
| CN107243783A (en) * | 2017-08-09 | 2017-10-13 | 睿力集成电路有限公司 | Chemical and mechanical grinding method, equipment and cleaning fluid |
-
2018
- 2018-09-25 CN CN201811118496.7A patent/CN110948377B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000233361A (en) * | 1998-12-14 | 2000-08-29 | Matsushita Electronics Industry Corp | Polishing liquid for chemicomechanical polishing and polishing method therefor |
| CN101297015A (en) * | 2005-10-24 | 2008-10-29 | 3M创新有限公司 | Polishing fluids and methods for CMP |
| CN1858133A (en) * | 2006-05-31 | 2006-11-08 | 河北工业大学 | Polishing liquid for chemical and mechanical polsihing of computer hard disc base sheet |
| TW201202402A (en) * | 2010-06-03 | 2012-01-16 | Asahi Glass Co Ltd | Polishing agent and polishing method |
| CN102623327A (en) * | 2011-01-31 | 2012-08-01 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical lapping method |
| US9401104B2 (en) * | 2014-05-05 | 2016-07-26 | Cabot Microelectronics Corporation | Polishing composition for edge roll-off improvement |
| CN106816374A (en) * | 2015-11-30 | 2017-06-09 | 台湾积体电路制造股份有限公司 | The method for performing CMP step |
| CN107243783A (en) * | 2017-08-09 | 2017-10-13 | 睿力集成电路有限公司 | Chemical and mechanical grinding method, equipment and cleaning fluid |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115261152A (en) * | 2022-08-05 | 2022-11-01 | 长鑫存储技术有限公司 | Cleaning agent and application thereof |
| CN115261152B (en) * | 2022-08-05 | 2024-03-29 | 长鑫存储技术有限公司 | Cleaning agent and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110948377B (en) | 2024-06-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI285668B (en) | Semiconductor abrasive, process for producing the same and method of polishing | |
| KR100808758B1 (en) | Abrasive slurry having high dispersion stability and manufacturing method for a substrate | |
| KR101277342B1 (en) | Polishing liquid for semiconductor substrate and method for polishing semiconductor substrate | |
| CN102623327B (en) | Chemical mechanical lapping method | |
| WO2012165376A1 (en) | Polishing agent and polishing method | |
| KR20120134105A (en) | Aqueous dispersion for chemical mechanical polishing, and chemical mechanical polishing method using same | |
| EP2321378B1 (en) | Chemical-mechanical polishing compositions and methods of making and using the same | |
| EP2123726A1 (en) | Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method, and chemical mechanical polishing aqueous dispersion preparation kit | |
| KR20020042500A (en) | Polishing method | |
| JPWO2012147605A1 (en) | Polishing method of non-oxide single crystal substrate | |
| CN104781365B (en) | Polypyrrole alkanone polishing composition and method | |
| KR20160009644A (en) | Use of chemical-mechanical polishing (cmp) composition for polishing substance or layer containing at least one iii-v material | |
| JP2001187880A (en) | Slurry for chemical mechanical polishing | |
| WO2018120809A1 (en) | Chemical-mechanical polishing liquid for flattening barrier layer | |
| CN104745086A (en) | Chemical mechanical polishing solution for barrier layer planarization, and use method thereof | |
| JP2003031529A (en) | Slurry for cmp, and manufacturing method of semiconductor device using the slurry | |
| TWI812595B (en) | Chemical mechanical polishing slurry for planarization of barrier film | |
| TW201500533A (en) | Chemical-mechanical polishing compositions comprising N, N, N', N'-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid | |
| CN110948377B (en) | Chemical mechanical polishing mixed liquid and polishing method | |
| Han et al. | Research progress on the application of ceria nanoparticles as abrasives in dielectric layer CMP and post cleaning: Structure, morphology, doping, and mechanism | |
| CN104745088A (en) | Chemical mechanical polishing solution for barrier layer planarization, and use method thereof | |
| TW546723B (en) | Planarizing method of semiconductor wafer | |
| JP2004146780A (en) | Polishing liquid composition | |
| JP2001200243A (en) | Abrasive material, production method thereof, and polishing method using asme | |
| CN112552824B (en) | Polishing composition and polishing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |