CN110943153A - Processing method for improving identifiability of LED bonding wire electrode - Google Patents
Processing method for improving identifiability of LED bonding wire electrode Download PDFInfo
- Publication number
- CN110943153A CN110943153A CN201811114484.7A CN201811114484A CN110943153A CN 110943153 A CN110943153 A CN 110943153A CN 201811114484 A CN201811114484 A CN 201811114484A CN 110943153 A CN110943153 A CN 110943153A
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- led chip
- laser
- led
- chip
- electrode
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Links
- 238000003672 processing method Methods 0.000 title claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 30
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- 238000000137 annealing Methods 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000000428 dust Substances 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000007667 floating Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 238000007664 blowing Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Laser Beam Processing (AREA)
Abstract
A processing method for improving the identifiability of an LED bonding wire electrode is characterized in that an LED chip which is cleaned and dried is irradiated by a laser beam emitted by a laser under a vacuum environment to melt the surface of the LED chip, and the LED chip flows into a groove at a low point position after being heated and melted at a microscopic angle, so that the LED chip is filled up, the roughness of the surface of the LED chip is improved, the operation is convenient, the surface of the chip is not damaged, the appearance quality of the chip is not influenced, the roughness and the brightness of the surface of the chip electrode are effectively improved, the identifiability of the electrode bonding wire is improved, and the packaging production efficiency and the product yield of the LED chip are ensured.
Description
Technical Field
The invention relates to the technical field of LED manufacturing, in particular to a processing method for improving the identifiability of an LED bonding wire electrode.
Background
The appearance of the LED completely replaces the traditional incandescent lamp and fluorescent lamp, the LED is developed into the current full-color LED from the initial blue LED, the LED is applied to various fields such as civil use, commercial use, military use and the like, the luminous efficiency is improved by about one order of magnitude every 10 years, and the white light luminous efficiency reaches more than 110 lm/W and exceeds the incandescent lamp. The LED lighting technology is developed rapidly, and meanwhile, the LED lighting technology is continuously upgraded and updated, so that higher use requirements of people are met.
The manufacturing process of the LED mainly comprises the steps of substrate manufacturing, epitaxial growth, chip manufacturing, chip packaging and the like, wherein the production quality of the LED chip is an important factor influencing the product cost, index and sales. The chip has high quality and good stability, and can meet the downstream use requirements, and the application of the LED is an important link with higher added value in the whole industrial chain. The manufacturing quality of the chip is completely the advantages and disadvantages of electrode firmness and surface flatness, roughness and weldability, and the electrode firmness and electrode weldability are relatively good for most chip manufacturers, the problems of electrode falling and difficult wire welding are small in probability, but the electrode surface flatness and the roughness of the chip are difficult to control due to the influence of chip process and equipment precision difference. At present, the surface of a chip electrode has more or less unevenness or stripe-shaped fluctuation, and besides being related to an electrode evaporation process and evaporation equipment, the flatness of an epitaxial surface is also an important influence factor influencing the final electrode surface flatness, and the problem is difficult to effectively solve only by adjusting the evaporation process and equipment parameters.
The flatness and roughness of the surface of the chip electrode directly affect the production efficiency of downstream packaging manufacturers, mainly because the electrode surface is dull and lackluster due to rough and uneven surface of the chip electrode, and good color difference can not be formed between the electrode surface and the chip surface, so that the identifiability of the packaging bonding wire electrode is affected, equipment alarms and stops routing when bonding wires are caused, even the bonding wires are deflected, the efficiency and the quality are affected, and the problem that equipment needs to be readjusted or standard samples need to be corrected is solved. Due to the difference of production levels of different chip manufacturers, the surface of the electrode of the current chip is difficult to achieve high consistency, so that downstream packaging manufacturers need to adjust welding wire standards according to different goods sources, or the phenomenon of frequent routing alarm for different products under the same standard is caused.
Disclosure of Invention
In order to overcome the defects of the technology, the invention provides a processing method for improving the surface roughness of an electrode by a rapid processing technology of laser on the surface of the electrode in a vacuum environment so as to improve the identifiability of the packaging bonding wire electrode.
The technical scheme adopted by the invention for overcoming the technical problems is as follows:
a processing method for improving the identifiability of an LED bonding wire electrode comprises the following steps:
a) cleaning the LED chip in pure water after the electrode evaporation and before the pattern is manufactured, removing floating dust and particles on the surface of the LED chip, and drying after cleaning;
b) blowing the surface of the LED chip by using nitrogen to remove particles and floating dust on the surface of the LED chip;
c) placing the LED chip in the closed cavity, and vacuumizing the closed cavity;
d) opening a laser in the closed cavity, adjusting the laser energy density and pulse frequency of the laser to enable the generated light beam to uniformly act on the surface of the Led chip, and melting the surface of the Led at high temperature by the energy generated by the laser beam;
e) breaking vacuum, taking out the LED chip irradiated by the laser, putting the LED chip into an atmosphere environment of nitrogen or argon for annealing treatment, and continuously introducing the nitrogen or argon after the annealing treatment until the temperature of the LED chip is naturally less than or equal to 30 ℃ and then taking out the LED chip;
f) and carrying out a pattern manufacturing process on the LED chip to finish the treatment of the surface of the electrode.
Further, the purity of the nitrogen in the step b) is more than or equal to 99.99 percent.
Further, an XY-axis moving platform is arranged in the closed containing cavity in the step c), and the LED chip is arranged on the XY-axis moving platform.
Further, in step c), the vacuum degree is more than
Torr。
Further, the wavelength of the laser in the step d) is 248-
) The pulse frequency of the laser is 50-200Hz, and the time for irradiating the surface of the LED chip by the laser is 30-300 seconds.
Further, the purity of the nitrogen or the argon in the step e) is more than or equal to 99.99 percent.
Further, the temperature of annealing in the step e) is 60-150 ℃, and the treatment time is 3-10 minutes.
The invention has the beneficial effects that: because the surface of the cleaned and dried LED chip is melted after being irradiated by a laser beam emitted by a laser under a vacuum environment, the LED chip flows into the groove at the low point position after being heated and melted at the micro angle, and is filled up, thereby improving the roughness of the surface of the LED chip, being convenient to operate, having no damage to the surface of the chip, not influencing the appearance quality of the chip, effectively improving the roughness and the brightness of the surface of an electrode of the chip, improving the identifiability of an electrode welding wire, and ensuring the packaging production efficiency and the product yield of the LED chip.
Detailed Description
The present invention is further explained below.
A processing method for improving the identifiability of an LED bonding wire electrode comprises the following steps:
a) cleaning the LED chip in pure water after the electrode evaporation and before the pattern is manufactured, removing floating dust and particles on the surface of the LED chip, and drying after cleaning;
b) blowing the surface of the LED chip by using nitrogen to remove particles and floating dust on the surface of the LED chip;
c) placing the LED chip in the closed cavity, and vacuumizing the closed cavity;
d) opening a laser in the closed cavity, adjusting the laser energy density and pulse frequency of the laser to enable the generated light beam to uniformly act on the surface of the Led chip, and melting the surface of the Led at high temperature by the energy generated by the laser beam;
e) breaking vacuum, taking out the LED chip irradiated by the laser, putting the LED chip into an atmosphere environment of nitrogen or argon for annealing treatment, and continuously introducing the nitrogen or argon after the annealing treatment until the temperature of the LED chip is naturally less than or equal to 30 ℃ and then taking out the LED chip;
f) and carrying out a pattern manufacturing process on the LED chip to finish the treatment of the surface of the electrode.
Because the surface of the cleaned and dried LED chip is melted after being irradiated by a laser beam emitted by a laser under a vacuum environment, the LED chip flows into the groove at the low point position after being heated and melted at the micro angle, and is filled up, thereby improving the roughness of the surface of the LED chip, being convenient to operate, having no damage to the surface of the chip, not influencing the appearance quality of the chip, effectively improving the roughness and the brightness of the surface of an electrode of the chip, improving the identifiability of an electrode welding wire, and ensuring the packaging production efficiency and the product yield of the LED chip.
Example 1:
the purity of the nitrogen in the step b) is more than or equal to 99.99 percent.
Example 2:
and c) an XY-axis moving platform is arranged in the closed accommodating cavity, and the LED chip is arranged on the XY-axis moving platform. The LED chip can be driven to move back and forth and left and right along the horizontal direction through the XY circumference moving platform, and the uniform action of the laser beam on the surface of the LED chip is ensured.
Example 3:
in step c) the vacuum degree is greater than
Torr。
Example 4:
the wavelength of the laser in the step d) is 248-1064nm, and the energy density of the laser is 0.05-1.0J/(pulse)
) The pulse frequency of the laser is 50-200Hz, and the time for irradiating the surface of the LED chip by the laser is 30-300 seconds.
Example 5:
the purity of the nitrogen or argon in the step e) is more than or equal to 99.99 percent.
Example 6:
the temperature of annealing in the step e) is 60-150 ℃, and the treatment time is 3-10 minutes.
Claims (7)
1. A processing method for improving the identifiability of an LED bonding wire electrode is characterized by comprising the following steps:
a) cleaning the LED chip in pure water after the electrode evaporation and before the pattern is manufactured, removing floating dust and particles on the surface of the LED chip, and drying after cleaning;
b) blowing the surface of the LED chip by using nitrogen to remove particles and floating dust on the surface of the LED chip;
c) placing the LED chip in the closed cavity, and vacuumizing the closed cavity;
d) opening a laser in the closed cavity, adjusting the laser energy density and pulse frequency of the laser to enable the generated light beam to uniformly act on the surface of the Led chip, and melting the surface of the Led at high temperature by the energy generated by the laser beam;
e) breaking vacuum, taking out the LED chip irradiated by the laser, putting the LED chip into an atmosphere environment of nitrogen or argon for annealing treatment, and continuously introducing the nitrogen or argon after the annealing treatment until the temperature of the LED chip is naturally less than or equal to 30 ℃ and then taking out the LED chip;
f) and carrying out a pattern manufacturing process on the LED chip to finish the treatment of the surface of the electrode.
2. The method of claim 1, wherein the step of processing comprises: the purity of the nitrogen in the step b) is more than or equal to 99.99 percent.
3. The method of claim 1, wherein the step of processing comprises: and c) an XY-axis moving platform is arranged in the closed accommodating cavity, and the LED chip is arranged on the XY-axis moving platform.
4. The method of claim 1, wherein the step of processing comprises: in step c) the vacuum degree is greater than
Torr。
5. The method of claim 1, wherein the step of processing comprises: the wavelength of the laser in the step d) is 248-1064nm, and the energy density of the laser is 0.05-1.0J/(pulse)
) The pulse frequency of the laser is 50-200Hz, and the time for the laser to irradiate the surface of the LED chip is 30-300 seconds。
6. The method of claim 1, wherein the step of processing comprises: the purity of the nitrogen or argon in the step e) is more than or equal to 99.99 percent.
7. The method of claim 1, wherein the step of processing comprises: the temperature of annealing in the step e) is 60-150 ℃, and the treatment time is 3-10 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811114484.7A CN110943153B (en) | 2018-09-25 | 2018-09-25 | Processing method for improving identifiability of LED bonding wire electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811114484.7A CN110943153B (en) | 2018-09-25 | 2018-09-25 | Processing method for improving identifiability of LED bonding wire electrode |
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| Publication Number | Publication Date |
|---|---|
| CN110943153A true CN110943153A (en) | 2020-03-31 |
| CN110943153B CN110943153B (en) | 2021-04-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201811114484.7A Active CN110943153B (en) | 2018-09-25 | 2018-09-25 | Processing method for improving identifiability of LED bonding wire electrode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111584699A (en) * | 2020-05-15 | 2020-08-25 | 盐城东山精密制造有限公司 | LED package body surface laser processing system and packaging method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102629656A (en) * | 2012-03-15 | 2012-08-08 | 苏州晶品光电科技有限公司 | LED sealing structure with high heat dissipation effect and sealing method thereof |
| CN104527038A (en) * | 2015-01-08 | 2015-04-22 | 常州信息职业技术学院 | Polymer microfluidic chip microchannel compression moulding forming device and method thereof |
| JP2016176840A (en) * | 2015-03-20 | 2016-10-06 | 株式会社デンソー | Sensor device manufacturing method |
| CN106449439A (en) * | 2016-09-27 | 2017-02-22 | 华中科技大学 | Glass chip packaging method |
| CN107809055A (en) * | 2017-12-14 | 2018-03-16 | 长春理工大学 | A kind of high-power semiconductor laser chip welding and assembling method |
-
2018
- 2018-09-25 CN CN201811114484.7A patent/CN110943153B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102629656A (en) * | 2012-03-15 | 2012-08-08 | 苏州晶品光电科技有限公司 | LED sealing structure with high heat dissipation effect and sealing method thereof |
| CN104527038A (en) * | 2015-01-08 | 2015-04-22 | 常州信息职业技术学院 | Polymer microfluidic chip microchannel compression moulding forming device and method thereof |
| JP2016176840A (en) * | 2015-03-20 | 2016-10-06 | 株式会社デンソー | Sensor device manufacturing method |
| CN106449439A (en) * | 2016-09-27 | 2017-02-22 | 华中科技大学 | Glass chip packaging method |
| CN107809055A (en) * | 2017-12-14 | 2018-03-16 | 长春理工大学 | A kind of high-power semiconductor laser chip welding and assembling method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111584699A (en) * | 2020-05-15 | 2020-08-25 | 盐城东山精密制造有限公司 | LED package body surface laser processing system and packaging method |
| CN111584699B (en) * | 2020-05-15 | 2021-09-10 | 盐城东山精密制造有限公司 | LED package surface laser processing system and LED packaging method |
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| Publication number | Publication date |
|---|---|
| CN110943153B (en) | 2021-04-06 |
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