CN110931516B - Tellurium-cadmium-mercury photoconductive device for infrared wide-spectrum light splitting and rapid temperature measurement - Google Patents
Tellurium-cadmium-mercury photoconductive device for infrared wide-spectrum light splitting and rapid temperature measurement Download PDFInfo
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- CN110931516B CN110931516B CN201911124447.9A CN201911124447A CN110931516B CN 110931516 B CN110931516 B CN 110931516B CN 201911124447 A CN201911124447 A CN 201911124447A CN 110931516 B CN110931516 B CN 110931516B
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- temperature measurement
- detector
- mercury
- photoconductive device
- tellurium
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- 238000009529 body temperature measurement Methods 0.000 title claims abstract description 13
- 238000001228 spectrum Methods 0.000 title claims abstract description 12
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims abstract description 6
- 238000003384 imaging method Methods 0.000 claims description 2
- 238000002329 infrared spectrum Methods 0.000 claims description 2
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 claims 1
- 229910052714 tellurium Inorganic materials 0.000 claims 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 1
- 239000006185 dispersion Substances 0.000 abstract description 7
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 abstract description 4
- 238000005070 sampling Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 9
- 238000005259 measurement Methods 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 3
- 108090000623 proteins and genes Proteins 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920006335 epoxy glue Polymers 0.000 description 2
- 238000004093 laser heating Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000004566 IR spectroscopy Methods 0.000 description 1
- 241000935974 Paralichthys dentatus Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004861 thermometry Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/28—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using photoemissive or photovoltaic cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/28—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using photoemissive or photovoltaic cells
- G01J2005/283—Array
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a mercury cadmium telluride light guide device for infrared wide spectrum light splitting and rapid temperature measurement. And has added the laser reference element that a yuan is used for locator, the reference element locates at the spectrum position of laser dispersion, the advantage of the invention lies in: the size of a detector pixel is designed into different sizes in the dispersion direction according to a dispersion light spot distribution diagram to carry out spectrum sampling; the detector can locate the detection position.
Description
Technical Field
The invention relates to an infrared photoconductive detection technology, in particular to a tellurium-cadmium-mercury photoconductive device for infrared wide-spectrum light-splitting rapid temperature measurement.
Background
The rapid temperature measuring system is a set of hardware equipment and a measuring and calibrating software system which are specially used for measuring the micro-area temperature change condition of a material gene chip under the condition of pulse laser heating. The micro-area instant temperature measurement technology is an important guarantee for realizing the accurate control of the heat treatment step by step and the measurement of thermodynamic parameters of materials. The thermophysical property of the material is one of the key contents of the research of material genome, and scientific parameters such as a material phase diagram and the like can be determined by accurately and quickly measuring the temperature, so that the quick temperature measuring device is one of the core devices for quickly measuring the physical property parameters of the material gene chip.
Currently, the real-time temperature measurement generally adopts a thermal equilibrium method, so the measurement speed is generally within milliseconds. The fastest traditional temperature measuring system (Nanmac company in America) in the commercial market has the temperature measuring speed of only 0.1ms, and is suitable for transient temperature measurement of initiating explosive devices. The speed of the temperature measurement device from FLUKE Raytek is around 1 millisecond. The common multi-position two-channel colorimetric thermometry scheme. For microsecond laser heating, accurate temperature measurement needs to be carried out within microsecond-order time, and the invention has very important significance in the field from the above domestic and foreign conditions.
Disclosure of Invention
The invention aims to prepare a tellurium-cadmium-mercury photoconductive device for infrared broad spectrum light splitting and rapid temperature measurement, which is suitable for temperature detection of a gene chip heated by laser pulses. After parallel beams are emitted into a fluorite (CaF2) beam splitter prism to complete dispersion, the relation between the focal plane position and the wavelength of the detector is obtained, and the size and the position of a detector pixel are designed.
As shown in fig. 1. The number of the photosensitive elements of the detector is the same as the number of the spectrums to be detected, and the size position of the photosensitive elements corresponds to the position of the dispersive optical point of the infrared spectrum imaging system. And a laser reference element for positioning the detector is additionally arranged, and the reference element is positioned at the dispersive spectrum position where the laser wavelength belongs. The invention adopts infrared spectroscopy to carry out non-contact temperature measurement. According to the infrared radiation theory, the most sensitive measurement wavelength should be 2-3 microns. In order to accurately invert the target temperature by the spectral curve, more than 5 spectral measurement channels are usually required. The factors such as high dynamic range, high measurement speed and the like are considered, the number of spectral measurement channels is properly increased, and microsecond-level rapid and accurate temperature measurement of a sample is realized.
The invention has the following advantages:
1. the size of a detector pixel is designed into different sizes in the dispersion direction according to a dispersion light spot distribution diagram to carry out spectrum sampling;
2. in order to ensure the sampling accuracy, the detector is additionally provided with a unary laser reference element for positioning the detection position of the detector.
Drawings
In the detector of FIG. 1, the distribution of photosensitive elements is shown, and n is the number of spectra to be detected.
The detector of figure 2 disperses the spot distribution in the plane.
FIG. 3 detector lithographic layout.
FIG. 4 is a schematic representation of a detector chip.
Detailed Description
The patent is further described in detail by taking a 30-element detector as an embodiment with reference to the attached drawings of the specification, wherein the adopted process is a conventional process for forming a mercury cadmium telluride chip, the detector has 31 photosensitive elements in total, and the second element is a laser reference element. Designing the detector photoetching layout of FIG. 3 according to the plane dispersion light spot distribution of the detector of FIG. 2, wherein the width of the photosensitive surface is 50 microns, and the length of the photosensitive surface is the size shown in the following table:
| serial number | Wavelength of light | Size of photosensitive surface |
| 1 | 1.1 | 0.046 |
| 2 | 1.06 (laser wavelength) | 0.029 |
| 3 | 1.2 | 0.067 |
| 4 | 1.3 | 0.061 |
| 5 | 1.4 | 0.059 |
| 6 | 1.5 | 0.057 |
| 7 | 1.6 | 0.056 |
| 8 | 1.7 | 0.057 |
| 9 | 1.8 | 0.058 |
| 10 | 1.9 | 0.058 |
| 11 | 2.0 | 0.061 |
| 12 | 2.1 | 0.062 |
| 13 | 2.2 | 0.064 |
| 14 | 2.3 | 0.066 |
| 15 | 2.4 | 0.068 |
| 16 | 2.5 | 0.07 |
| 17 | 2.6 | 0.073 |
| 18 | 2.7 | 0.075 |
| 19 | 2.8 | 0.077 |
| 20 | 2.9 | 0.08 |
| 21 | 3.0 | 0.083 |
| 22 | 3.1 | 0.085 |
| 23 | 3.2 | 0.087 |
| 24 | 3.3 | 0.09 |
| 25 | 3.4 | 0.093 |
| 26 | 3.5 | 0.095 |
| 27 | 3.6 | 0.098 |
| 28 | 3.7 | 0.1 |
| 29 | 3.8 | 0.103 |
| 30 | 3.9 | 0.106 |
| 31 | 4.0 | 0.108 |
The specific process flow is as follows:
1. selecting a tellurium-cadmium-mercury material with the component X being 0.33, carrying out a series of treatments of coarse grinding on the first surface to remove 80-100 mu m, polishing to remove 40-50 mu m, chemical corrosion to remove 3-5 mu m and the like, and growing a layer after removing damage
The anodized layer serves as a passivation film.
2. And adhering the mercury cadmium telluride material on the processed first surface and the sapphire substrate together by using low-temperature epoxy glue to perform epoxy glue curing.
3. And flatly pasting the cured material through a vacuum tablet press, thinning, finely polishing to 8-10 mu m, cleaning, corroding and oxidizing.
4. And carrying out first photoetching on the surface of the sheet to grow a high-purity indium layer and a high-purity gold layer, wherein the purpose of indium growing is to ensure that the indium layer and the gold layer have good adhesive force and good ohmic contact with mercury cadmium telluride, and the purpose of gold growing is to prevent the indium metal from being naturally oxidized and ensure that the chip has better conductive capability. The indium layer has a thickness of
The thickness of the gold layer is
And floating the glue after the completion.
5. And photoetching a chip pattern, and etching the pattern by using argon ions.
6. And after the completion, floating the surface photoresist.
7. And throwing 3-5 mu m of photoresist on the surface of the whole chip for protection, and scribing. This results in a detector chip as shown in fig. 4.
Claims (1)
1. A tellurium cadmium mercury photoconductive device for infrared broad spectrum light splitting fast temperature measurement is characterized in that:
the number of detector photosensitive elements of the HgCdTe photoconductive device is the same as the number of spectrums to be detected, the size and the position of the photosensitive elements correspond to the size and the position of a dispersive light spot of an infrared spectrum imaging system, and the HgCdTe photoconductive device is also provided with a laser reference element for positioning the detector, and the reference element is positioned at the position of the dispersive spectrum to which the laser wavelength belongs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911124447.9A CN110931516B (en) | 2019-11-18 | 2019-11-18 | Tellurium-cadmium-mercury photoconductive device for infrared wide-spectrum light splitting and rapid temperature measurement |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911124447.9A CN110931516B (en) | 2019-11-18 | 2019-11-18 | Tellurium-cadmium-mercury photoconductive device for infrared wide-spectrum light splitting and rapid temperature measurement |
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| Publication Number | Publication Date |
|---|---|
| CN110931516A CN110931516A (en) | 2020-03-27 |
| CN110931516B true CN110931516B (en) | 2021-11-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911124447.9A Active CN110931516B (en) | 2019-11-18 | 2019-11-18 | Tellurium-cadmium-mercury photoconductive device for infrared wide-spectrum light splitting and rapid temperature measurement |
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| Country | Link |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4847489A (en) * | 1987-04-01 | 1989-07-11 | Messerschmitt-Bolkow-Blohm Gmbh | Light sensitive superlattice detector arrangement with spectral sensitivity |
| US5373182A (en) * | 1993-01-12 | 1994-12-13 | Santa Barbara Research Center | Integrated IR and visible detector |
| CN102004002A (en) * | 2010-09-08 | 2011-04-06 | 中国科学院上海技术物理研究所 | HgCdTe infrared photoconductive detector with reference element structure |
| CN102384841A (en) * | 2011-09-23 | 2012-03-21 | 中国兵器工业第二〇五研究所 | Spectral responsivity test method for plane array detector |
| CN104359553A (en) * | 2014-12-05 | 2015-02-18 | 中国科学院光电研究院 | Compact grating dispersion spectral imager |
| WO2019191543A1 (en) * | 2018-03-30 | 2019-10-03 | Vishay Intertechnology, Inc. | Multi-spectral light sensor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7675618B2 (en) * | 2007-04-16 | 2010-03-09 | Ase Optics, Inc. | Multiplexing spectrometer |
-
2019
- 2019-11-18 CN CN201911124447.9A patent/CN110931516B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4847489A (en) * | 1987-04-01 | 1989-07-11 | Messerschmitt-Bolkow-Blohm Gmbh | Light sensitive superlattice detector arrangement with spectral sensitivity |
| US5373182A (en) * | 1993-01-12 | 1994-12-13 | Santa Barbara Research Center | Integrated IR and visible detector |
| CN102004002A (en) * | 2010-09-08 | 2011-04-06 | 中国科学院上海技术物理研究所 | HgCdTe infrared photoconductive detector with reference element structure |
| CN102384841A (en) * | 2011-09-23 | 2012-03-21 | 中国兵器工业第二〇五研究所 | Spectral responsivity test method for plane array detector |
| CN104359553A (en) * | 2014-12-05 | 2015-02-18 | 中国科学院光电研究院 | Compact grating dispersion spectral imager |
| WO2019191543A1 (en) * | 2018-03-30 | 2019-10-03 | Vishay Intertechnology, Inc. | Multi-spectral light sensor |
| CN112088434A (en) * | 2018-03-30 | 2020-12-15 | 威世科技公司 | Multi-spectrum light sensor |
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| CN110931516A (en) | 2020-03-27 |
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