CN110923660B - Method for improving in-plane uniformity of square resistance of doped amorphous silicon film - Google Patents

Method for improving in-plane uniformity of square resistance of doped amorphous silicon film Download PDF

Info

Publication number
CN110923660B
CN110923660B CN201911291715.6A CN201911291715A CN110923660B CN 110923660 B CN110923660 B CN 110923660B CN 201911291715 A CN201911291715 A CN 201911291715A CN 110923660 B CN110923660 B CN 110923660B
Authority
CN
China
Prior art keywords
amorphous silicon
doped amorphous
gas
plane uniformity
germane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201911291715.6A
Other languages
Chinese (zh)
Other versions
CN110923660A (en
Inventor
王剑敏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Huahong Grace Semiconductor Manufacturing Corp
Original Assignee
Shanghai Huahong Grace Semiconductor Manufacturing Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Huahong Grace Semiconductor Manufacturing Corp filed Critical Shanghai Huahong Grace Semiconductor Manufacturing Corp
Priority to CN201911291715.6A priority Critical patent/CN110923660B/en
Publication of CN110923660A publication Critical patent/CN110923660A/en
Application granted granted Critical
Publication of CN110923660B publication Critical patent/CN110923660B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)

Abstract

The invention discloses a method for improving the in-plane uniformity of a doped amorphous silicon film square resistor, which is characterized by comprising the following steps of: when the doped amorphous silicon thin film is deposited, germane is introduced into the gas participating in the reaction. During deposition, the deposition temperature is 300-450 ℃, the pressure is 1-10 Torr, the high-frequency power is 100-1000W, the low-frequency power is 100-1000W, the silane flow is 100-1000 sccm, the deposition time is 10-100 s, and the Ar flow is 500-5000 sccm. The germane flow is 10-1000 sccm, and the deposition time is 10-100 s. After a certain amount of germane is introduced, the invention changes the doping distribution and improves the in-plane uniformity because the bonding capacity of Ge and B is different from that of silicon.

Description

Method for improving in-plane uniformity of square resistance of doped amorphous silicon film
Technical Field
The invention relates to the field of semiconductor manufacturing processes, in particular to a preparation method of a semiconductor film, and specifically relates to a method for improving the uniformity in a square resistance surface of a doped amorphous silicon film.
Background
Amorphous silicon is an allotropic form of silicon that can be deposited in thin films on a variety of substrates to provide certain unique functions for a variety of electronic applications. Amorphous silicon is used in mass-produced micro-electro-mechanical systems (MEMS) and nano-electro-mechanical systems (NEMS), solar cells, microcrystalline silicon and micro-amorphous silicon, even for roll-on-roll processing techniques on various substrates.
Amorphous silicon material is widely used in various fields of semiconductors, and when amorphous silicon is used in a post-metal process, a process with a lower temperature is required to avoid melting of a metal wire. The main methods for preparing hydrogenated amorphous silicon thin films are Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD). Among them, PVD method is basically sputtering, and CVD methods include hot wire chemical vapor deposition (HW-CVD), microwave plasma electron cyclotron resonance chemical vapor deposition (MWECR-CVD) and Plasma Enhanced Chemical Vapor Deposition (PECVD). The process of generating the plasma by the plasma enhanced chemical vapor deposition method is a remarkable characteristic different from other CVD methods in that a large amount of energy is provided for the reaction, when the plasma enhanced chemical vapor deposition method is used for preparing a film, reaction gas is ionized to generate a large amount of high-temperature plasma, heat is provided for the deposition process, and energy from the outside is not consumed, so that the deposition reaction temperature is remarkably reduced, the original CVD process which can be carried out at high temperature can be realized at low temperature, the energy consumption is reduced, and the reduction of the production cost is facilitated. Therefore, the method adapts to the trend of the current technology to the low-temperature process, and will certainly attract more attention. The film has high photosensitivity, low density of interstitial states and no size limitation, which are three important advantages of the preparation of the amorphous silicon film by the PECVD method, the low-temperature process of the frame PECVD ensures that the requirement on a substrate is not high when the film is prepared, and the application range of the method is greatly expanded, so that the plasma enhanced chemical vapor deposition preparation method is almost the preferred scheme, and the traditional preparation method comprises the following steps as shown in figure 1:
step one, preparing the deposition operation of amorphous silicon in a plasma enhanced chemical vapor deposition reaction chamber.
And secondly, introducing silane, carrier gas and doping gas into the reaction chamber.
And step three, stabilizing the pressure in the reaction chamber.
And step four, introducing radio frequency, and beginning to deposit the amorphous silicon film layer.
And step five, closing the radio frequency, and pumping out residual gas in the cavity.
And step six, finishing the amorphous silicon deposition.
However, when the doped amorphous silicon is formed in the cavity type, the in-plane uniformity of the sheet resistance indicating the amount of the dopant is difficult to control, and the surface roughness of the formed amorphous silicon thin film is also poor. In-plane uniformity is an important parameter for measuring the quality of the doped amorphous silicon thin film formation, and the parameter is expressed in std% as the lower the value, the better. By examining the in-plane distribution of the sheet resistance of a doped amorphous silicon, as shown in fig. 2, the average value of the sheet resistance =4.741M Ω/sq, the in-plane uniformity std% =3.51%, and the in-plane range =0.768M Ω/sq was measured.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a method for improving the uniformity in the square resistance surface of a doped amorphous silicon thin film so as to obtain an amorphous silicon thin film with uniform square resistance.
In order to solve the problems, the method for improving the in-plane uniformity of the square resistor of the doped amorphous silicon thin film is to introduce germane into gas participating in reaction when the doped amorphous silicon thin film is deposited.
The further improvement is that during deposition, the deposition temperature is 300-450 ℃, the pressure is 1-10 Torr, the high-frequency power is 100-1000 w, the low-frequency power is 100-1000 w, the silane flow is 100-1000 sccm, the deposition time is 10-100 s, the Ar flow is 500-5000 sccm, the germane flow is 10-1000 sccm, and the deposition time is 10-100 s.
The further improvement is that after a certain amount of germane is introduced, the doping distribution is changed and the in-plane uniformity is improved because the bonding capacity of Ge and B is different from that of silicon.
In a further improvement, the method for improving the in-plane uniformity of the sheet resistance of the doped amorphous silicon thin film comprises the following steps:
step one, preparing the deposition operation of amorphous silicon in a plasma enhanced chemical vapor deposition reaction chamber.
And secondly, introducing silane, germane and carrier gas into the reaction chamber.
And step three, stabilizing the pressure in the reaction chamber.
And step four, introducing radio frequency, and beginning to deposit the amorphous silicon film layer.
And step five, closing the radio frequency, and pumping out residual gas in the cavity.
And step six, finishing the amorphous silicon deposition.
In a further improvement, the carrier gas in the second step is argon.
According to the method for improving the in-plane uniformity of the square resistor of the doped amorphous silicon thin film, germane is introduced while the doped amorphous silicon thin film is deposited, and through germane decomposition, the doping distribution is changed and the in-plane uniformity is improved due to the fact that the combination capacity of Ge and B is different from that of silicon.
Drawings
FIG. 1 is a flow chart of a conventional process for depositing an amorphous silicon thin film.
FIG. 2 is a schematic diagram of the in-plane distribution of an amorphous silicon thin film deposited by a prior art process.
FIG. 3 is a process flow diagram of the amorphous silicon thin film of the motor provided by the present invention.
FIG. 4 is a schematic illustration of the in-plane profile of an amorphous silicon thin film deposited using the process of the present invention.
Detailed Description
The method for improving the in-plane uniformity of the square resistor of the doped amorphous silicon film can improve the in-plane uniformity of the doped amorphous silicon film.
It is characterized by that in the course of deposition of doped amorphous silicon filmDuring the reaction, germane GeH is introduced into the gas participating in the reaction4。
When the PECVD method is used for depositing the doped amorphous silicon film, the deposition temperature is 300-450 ℃, the pressure is 1-10 Torr, the high-frequency power is 100-1000 w, the low-frequency power is 100-1000 w, the silane flow is 100-1000 sccm, the deposition time is 10-100 s, the Ar flow is 500-5000 sccm, the germane flow is 10-1000 sccm, and the deposition time is 10-100 s. Under the gas environment and the process parameters, the doped amorphous silicon film with better in-plane uniformity is formed.
The principle of the process method is that after a certain amount of germane is introduced, the bonding capacity of Ge decomposed from germane and B in the doping gas is different from that of silicon, so that the doping distribution is changed, and the in-plane uniformity is improved.
The method for improving the in-plane uniformity of the sheet resistance of the doped amorphous silicon thin film, as shown in FIG. 3, comprises the following steps:
step one, preparing the deposition operation of doped amorphous silicon in a plasma enhanced chemical vapor deposition reaction cavity.
And secondly, introducing silane, germane and a carrier gas into the reaction chamber, wherein the carrier gas is an inert gas, a typical carrier gas is usually argon, and neon or helium can also be adopted. The silane can be monosilane, disilane and trisilane gas, the silane is decomposed to form an amorphous silicon layer, and corresponding doping gas is introduced into the reaction chamber to dope the amorphous silicon.
And step three, stabilizing the pressure in the reaction chamber to ensure that the gas pressure in the reaction chamber is 1-10 Torr.
And step four, introducing radio frequency RF and starting to deposit the amorphous silicon film layer.
And step five, closing the radio frequency, pumping out residual gas in the cavity, namely supplying purge gas into the reaction cavity and pumping the cavity.
And step six, finishing the amorphous silicon deposition.
Fig. 4 is an in-plane uniformity distribution diagram of the doped amorphous silicon thin film deposited by the method of the present invention, and it was measured that the average sheet resistance value was 4.602M Ω/sq, the in-plane uniformity std% =2.47%, and the in-plane range =0.488M Ω/sq. Compared with the amorphous silicon film formed by the traditional process shown in FIG. 2, the parameters are optimized, and the std% value of the in-plane uniformity is reduced from 3.51% to 2.47%, so that the uniformity is obviously improved.
The above are merely preferred embodiments of the present invention, and are not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (5)

1. A method for improving the uniformity in the square resistance surface of a doped amorphous silicon film is characterized in that: adding germane serving as a reaction gas into the introduced reaction gas containing silane, doping gas and carrier gas when depositing the doped amorphous silicon film; during deposition, the deposition temperature is 300-450 ℃, the pressure is 1-10 Torr, the high-frequency power is 100-1000 w, the low-frequency power is 100-1000 w, the silane flow is 100-1000 sccm, the deposition time is 10-100 s, and the carrier gas flow is 500-5000 sccm;
the flow rate of the introduced germane is 10-1000 sccm;
after a certain amount of germane is introduced, the combination ability of Ge decomposed from germane and B in the doping gas is different from that of silicon, so that the doping distribution is changed, and the in-plane uniformity is improved.
2. The method of claim 1, wherein the step of improving the in-plane uniformity of the sheet resistance of the doped amorphous silicon thin film comprises: the method comprises the following steps:
step one, preparing deposition operation of amorphous silicon in a reaction chamber;
introducing silane, germane, doping gas and carrier gas into the reaction chamber;
stabilizing the pressure in the reaction chamber;
step four, introducing radio frequency, and beginning to deposit an amorphous silicon film layer;
step five, closing the radio frequency, and pumping out residual gas in the cavity;
and step six, finishing the amorphous silicon deposition.
3. The method of claim 2, wherein the step of improving the in-plane uniformity of the sheet resistance of the doped amorphous silicon thin film comprises: the reaction chamber is a plasma enhanced chemical vapor deposition reaction chamber.
4. The method of claim 2, wherein the step of improving the in-plane uniformity of the sheet resistance of the doped amorphous silicon thin film comprises: and the carrier gas in the second step is inert gas.
5. The method of claim 4, wherein the step of improving the in-plane uniformity of the sheet resistance of the doped amorphous silicon thin film comprises: the inert gas is at least one of helium, neon and argon.
CN201911291715.6A 2019-12-16 2019-12-16 Method for improving in-plane uniformity of square resistance of doped amorphous silicon film Active CN110923660B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911291715.6A CN110923660B (en) 2019-12-16 2019-12-16 Method for improving in-plane uniformity of square resistance of doped amorphous silicon film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911291715.6A CN110923660B (en) 2019-12-16 2019-12-16 Method for improving in-plane uniformity of square resistance of doped amorphous silicon film

Publications (2)

Publication Number Publication Date
CN110923660A CN110923660A (en) 2020-03-27
CN110923660B true CN110923660B (en) 2022-05-20

Family

ID=69862707

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911291715.6A Active CN110923660B (en) 2019-12-16 2019-12-16 Method for improving in-plane uniformity of square resistance of doped amorphous silicon film

Country Status (1)

Country Link
CN (1) CN110923660B (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04335518A (en) * 1991-05-10 1992-11-24 Oki Electric Ind Co Ltd Formation of semiconductor thin film
JP2953636B2 (en) * 1991-06-21 1999-09-27 キヤノン株式会社 Manufacturing method of thin film semiconductor
US9269898B2 (en) * 2014-02-07 2016-02-23 Crossbar, Inc. Low temperature deposition for silicon-based conductive film
CN104393121B (en) * 2014-10-27 2016-11-16 中国科学院上海微系统与信息技术研究所 Mix oxygen amorphous silicon germanium thin film, hetero-junctions crystal silicon solar energy battery and preparation method

Also Published As

Publication number Publication date
CN110923660A (en) 2020-03-27

Similar Documents

Publication Publication Date Title
US8859044B2 (en) Method of preparing graphene layer
CN110205603B (en) Multilayer graphene and preparation method thereof
US9324561B2 (en) Silicon carbide epitaxial wafer, and preparation method thereof
CN106868469B (en) A method of non-metal catalyst prepares graphene in silicon substrate
CN111826714B (en) Method for enhancing CVD diamond heteroepitaxial nucleation based on radio frequency power supply applied bias voltage
JPH0746729B2 (en) Method of manufacturing thin film transistor
CN113832432B (en) Preparation method of two-dimensional compound semiconductor film
KR20070106365A (en) Method for manufacturing diamond-like carbon film
JP2002093721A (en) Method and apparatus for forming deposition film
JP3146112B2 (en) Plasma CVD equipment
CN110923660B (en) Method for improving in-plane uniformity of square resistance of doped amorphous silicon film
CN112331556A (en) Amorphous silicon thin film forming method
CN104109836A (en) Method for manufacturing graphene coating
CN115632089A (en) Preparation method of heterojunction battery, heterojunction battery structure and processing system thereof
CN105648417B (en) A kind of method that amorphous carbon film is prepared using low temperature chemical vapor deposition technology
KR100850499B1 (en) Fabrication apparatus and method for very dense carbon nanotube
CN114318264A (en) Method for preparing ITO film based on magnetron sputtering and etching treatment
CN113936989A (en) Cleaning method of reaction chamber of plasma etching equipment and wafer etching method
CN113725076A (en) Preparation method of hydrogen terminal diamond tunneling ohmic contact resistor
JP2004119938A (en) Manufacturing method for a silicon oxide film and apparatus thereof
CN111607775A (en) Method for preparing two-dimensional h-BNC hybrid film with adjustable components
KR101267424B1 (en) Preparing method of free-standing silicon film using substrate surface treatment process
CA2409265A1 (en) Method for manufacturing high efficiency photovoltaic devices at enhanced deposition rates
JP2000178749A (en) Plasma cvd equipment
KR20170083782A (en) Boron-Doped Diamond Thin Film Deposition Method and Boron-Doped Diamond-Deposited Sub Material by the Same Method, and Hybrid Thin Film Deposition Apparatus Using the Same Method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant